JP4526572B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
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- JP4526572B2 JP4526572B2 JP2008062774A JP2008062774A JP4526572B2 JP 4526572 B2 JP4526572 B2 JP 4526572B2 JP 2008062774 A JP2008062774 A JP 2008062774A JP 2008062774 A JP2008062774 A JP 2008062774A JP 4526572 B2 JP4526572 B2 JP 4526572B2
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- Japan
- Prior art keywords
- substrate
- projection system
- substrate table
- immersion liquid
- inlet
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
放射のビームを提供するようになされた照明システムと、
ビームの断面にパターンを付与するようになされたパターニング・デバイスを保持するようになされた支持構造と、
基板を保持するようになされた基板テーブルと、
パターン化されたビームを基板の目標部分に投射するようになされた投影システムと、
基板と投影システムの間の空間に液浸液を提供するようになされた液体供給システムであって、上記空間の境界の少なくとも一部に沿って展開し、且つ、基板テーブル上の対象に対して正しい位置に置かれた障壁部材を備え、それにより障壁部材と対象の間の液浸液によって生成されるあらゆる毛管圧が、上記空間に液浸液を拘束するほど高くなることのない液体供給システムと
を備えたリソグラフィ装置であって、
障壁部材と対象の間にシールが提供されないリソグラフィ装置が提供される。
基板テーブル上の基板と投影システムの間の空間に液浸液を提供するステップであって、上記空間の境界の少なくとも一部に沿って障壁部材が展開するステップと、
障壁部材と対象の間の液浸液によって生成されるあらゆる毛管圧が、上記空間に液浸液を拘束するほど高くならないように障壁部材及び対象のうちの少なくともいずれか一方を配置することによって障壁部材と基板テーブル上の対象の間で液浸液をリークさせるステップと、
パターン化された放射のビームを投影システムを使用して基板の目標部分に投射するステップと
を含むデバイス製造方法が提供される。
− 放射(たとえばUV放射)の投影ビームPBを提供するための照明システム(イルミネータ)IL
− パターニング・デバイス(たとえばマスク)MAを支持するための、アイテムPLに対して該パターニング・デバイスを正確に位置決めするための第1の位置決めデバイスPMに接続された第1の支持構造(たとえばマスク・テーブル)MT
− 基板(たとえばレジスト被覆ウェハ)Wを保持するための、アイテムPLに対して該基板を正確に位置決めするための第2の位置決めデバイスPWに接続された基板テーブル(たとえばウェハ・テーブル)WT
− パターニング・デバイスMAによって投影ビームPBに付与されたパターンを基板Wの目標部分C(たとえば1つ又は複数のダイが含まれている)に画像化するための投影システム(たとえば屈折投影レンズ)PL
を備えている。
1.ステップ・モード:マスク・テーブルMT及び基板テーブルWTが基本的に静止状態に維持され、投影ビームに付与されたパターン全体が目標部分Cに1回で投影される(即ち単一静止露光)。次に、基板テーブルWTがX方向及び/又はY方向にシフトされ、異なる目標部分Cが露光される。ステップ・モードでは、露光視野の最大サイズによって、単一静止露光で画像化される目標部分Cのサイズが制限される。
2.走査モード:投影ビームに付与されたパターンが目標部分Cに投影されている間、マスク・テーブルMT及び基板テーブルWTが同期走査される(即ち単一動的露光)。マスク・テーブルMTに対する基板テーブルWTの速度及び方向は、投影システムPLの倍率(縮小率)及び画像反転特性によって決まる。走査モードでは、露光視野の最大サイズによって、単一動的露光における目標部分の幅(非走査方向の幅)が制限され、また、走査運動の長さによって目標部分の高さ(走査方向の高さ)が決まる。
3.その他のモード:プログラム可能パターニング・デバイスを保持するべくマスク・テーブルMTが基本的に静止状態に維持され、投影ビームに付与されたパターンが目標部分Cに投影されている間、基板テーブルWTが移動又は走査される。このモードでは、通常、パルス放射源が使用され、走査中、基板テーブルWTが移動する毎に、或いは連続する放射パルスと放射パルスの間に、必要に応じてプログラム可能パターニング・デバイスが更新される。この動作モードは、上で参照したタイプのプログラム可能ミラー・アレイなどのプログラム可能パターニング・デバイスを利用しているマスクレス・リソグラフィに容易に適用することができる。
Claims (24)
- 対象を保持するための基板テーブルと、
前記対象の目標部分上にパターン化されたビームを投影するように構成された投影システムと、
前記投影システムと前記基板テーブルとの間に配置された、液浸領域を形成するための構造体であって、前記構造体は、液浸液を供給するように構成されており、前記構造体の表面の少なくとも一部は、前記投影システム並びに前記基板テーブル及び/又は前記対象とともに、少なくとも一部に前記液浸液を収容するように構成された空間を画成しており、前記構造体はさらに、前記液浸液を前記基板テーブルの縁まで到達させるように前記対象及び/又は基板テーブルと前記構造体の底面との間から前記液浸液をリークさせることにより、該液浸液によって前記基板テーブル及び/又は前記対象に一定の力が与えられるように、前記対象に対して高さ及び傾斜のうち少なくとも1つが制御可能に配置されている、構造体と、
前記構造体の半径方向の外側に配置され、前記空間からリークさせられた前記液浸液を除去するように構成された、少なくとも1つの出口と、
を備えるリソグラフィ装置。 - 前記構造体は、前記空間の境界の少なくとも一部に沿って延在する、請求項1に記載の装置。
- 前記構造体は、前記空間に前記液浸液を供給するための少なくとも1つの入口を備える、請求項1又は2に記載の装置。
- 前記構造体は、前記少なくとも1つの入口の半径方向の外側において、該少なくとも1つの入口の下方に延在している、請求項3に記載の装置。
- 前記構造体は、前記少なくとも1つの入口の半径方向の内側において、前記少なくとも1つの入口の反対側よりも、前記対象から離れている、請求項3又は4に記載の装置。
- 前記入口は、前記構造体の下方内側端部に形成されている、請求項3〜5のいずれか1項に記載の装置。
- 前記構造体は、さらに、前記入口と前記液浸液の供給源との間にチャンバを備える、請求項3〜6のいずれか1項に記載の装置。
- 前記構造体は、前記投影システムから機械的に分離している、請求項1〜7のいずれか1項に記載の装置。
- 前記構造体は、前記基板テーブルを支持するベース・フレーム、及び、前記投影システムを支持する投影システム・フレーム、のうち少なくとも1つに連結されている、請求項1〜8のいずれか1項に記載の装置。
- 前記構造体は、前記投影システムの光軸の方向に移動可能である、請求項1〜9のいずれか1項に記載の装置。
- 前記出口は、前記基板テーブル上に設けられている、請求項1〜10のいずれか1項に記載の装置。
- 前記出口は、前記基板テーブルの上方に懸垂されている、請求項1〜10のいずれか1項に記載の装置。
- 前記出口は、前記ベース・フレーム又は前記投影システム・フレームに連結されている、請求項12に記載の装置。
- 前記基板テーブルの端部周囲に配されたリムをさらに備える、請求項11〜13のいずれか1項に記載の装置。
- 前記対象は基板を含み、前記構造体の前記底面は、前記基板から少なくとも50μmの位置にある、請求項1〜14のいずれか1項に記載の装置。
- 前記対象は基板を含み、前記構造体の前記底面は、前記基板から100μm、150μm、300μm又は400μmのうちのいずれかの位置にある、請求項15に記載の装置。
- 前記対象に対する前記構造体の高さ及び傾斜のうち少なくとも1つを調整するように構成されたアクチュエータをさらに備える、請求項1〜16のいずれか1項に記載の装置。
- 前記対象は、前記基板、センサ、及び、シャッタのうち少なくとも1つを含む、請求項1〜17のいずれか1項に記載の装置。
- 前記構造体は、前記投影システムの最終エレメントを囲むように配置されている、請求項1〜18のいずれか1項に記載の装置。
- 前記構造体は、閉じた平面形状を有している、請求項19に記載の装置。
- 前記構造体の平面形状は、環形状を有している、請求項20に記載の装置
- 前記構造体の平面形状は、方形を有している、請求項20に記載の装置。
- 前記構造体は、少なくとも一部において開いた平面形状を有している、請求項19に記載の装置。
- 前記構造体の平面形状は、U字形状を有している、請求項23に記載の装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/743,271 US7394521B2 (en) | 2003-12-23 | 2003-12-23 | Lithographic apparatus and device manufacturing method |
Related Parent Applications (1)
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JP2006545996A Division JP4157146B2 (ja) | 2003-12-23 | 2004-12-15 | リソグラフィ装置及びデバイス製造方法 |
Publications (2)
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JP2008219020A JP2008219020A (ja) | 2008-09-18 |
JP4526572B2 true JP4526572B2 (ja) | 2010-08-18 |
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JP2006545996A Expired - Fee Related JP4157146B2 (ja) | 2003-12-23 | 2004-12-15 | リソグラフィ装置及びデバイス製造方法 |
JP2008062774A Expired - Fee Related JP4526572B2 (ja) | 2003-12-23 | 2008-03-12 | リソグラフィ装置 |
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JP2006545996A Expired - Fee Related JP4157146B2 (ja) | 2003-12-23 | 2004-12-15 | リソグラフィ装置及びデバイス製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7394521B2 (ja) |
EP (3) | EP2259139B1 (ja) |
JP (2) | JP4157146B2 (ja) |
KR (1) | KR100855337B1 (ja) |
CN (2) | CN101872129B (ja) |
TW (1) | TWI261151B (ja) |
WO (1) | WO2005064405A2 (ja) |
Families Citing this family (216)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG135052A1 (en) | 2002-11-12 | 2007-09-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
SG157962A1 (en) * | 2002-12-10 | 2010-01-29 | Nikon Corp | Exposure apparatus and method for producing device |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
CN104678715B (zh) | 2003-02-26 | 2017-05-17 | 株式会社尼康 | 曝光方法以及器件制造方法 |
EP1610361B1 (en) * | 2003-03-25 | 2014-05-21 | Nikon Corporation | Exposure system and device production method |
KR101176817B1 (ko) | 2003-04-07 | 2012-08-24 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
JP4488004B2 (ja) * | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
CN1771463A (zh) * | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
JP4656057B2 (ja) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
KR101323993B1 (ko) * | 2003-04-10 | 2013-10-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
KR20180089562A (ko) | 2003-04-10 | 2018-08-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
KR101697896B1 (ko) | 2003-04-11 | 2017-01-18 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
KR101318542B1 (ko) | 2003-04-11 | 2013-10-16 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
WO2004092830A2 (en) * | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
KR20050122269A (ko) * | 2003-04-17 | 2005-12-28 | 가부시키가이샤 니콘 | 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열 |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR20060009356A (ko) * | 2003-05-15 | 2006-01-31 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TWI612557B (zh) * | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
TWI424470B (zh) * | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
KR101548832B1 (ko) * | 2003-05-28 | 2015-09-01 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
TWI442694B (zh) * | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
US7213963B2 (en) * | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261742A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
KR101528016B1 (ko) * | 2003-06-13 | 2015-06-12 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
TWI527086B (zh) | 2003-06-19 | 2016-03-21 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
EP1639391A4 (en) * | 2003-07-01 | 2009-04-29 | Nikon Corp | USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS |
EP2853943B1 (en) * | 2003-07-08 | 2016-11-16 | Nikon Corporation | Wafer table for immersion lithography |
JP4844123B2 (ja) * | 2003-07-09 | 2011-12-28 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
EP2264532B1 (en) | 2003-07-09 | 2012-10-31 | Nikon Corporation | Exposure apparatus and device manufacturing method |
KR101296501B1 (ko) * | 2003-07-09 | 2013-08-13 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
SG109000A1 (en) | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1500982A1 (en) * | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4524669B2 (ja) | 2003-07-25 | 2010-08-18 | 株式会社ニコン | 投影光学系の検査方法および検査装置 |
EP2264533B1 (en) * | 2003-07-28 | 2012-09-19 | Nikon Corporation | Exposure apparatus, method for producing device, and exposure method |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG133590A1 (en) * | 2003-08-26 | 2007-07-30 | Nikon Corp | Optical element and exposure device |
US8149381B2 (en) | 2003-08-26 | 2012-04-03 | Nikon Corporation | Optical element and exposure apparatus |
EP2261740B1 (en) | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101303536B (zh) * | 2003-08-29 | 2011-02-09 | 株式会社尼康 | 曝光装置和器件加工方法 |
KR101590686B1 (ko) * | 2003-09-03 | 2016-02-01 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
WO2005029559A1 (ja) * | 2003-09-19 | 2005-03-31 | Nikon Corporation | 露光装置及びデバイス製造方法 |
SG131929A1 (en) | 2003-09-29 | 2007-05-28 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
JP2005136364A (ja) * | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
ATE509367T1 (de) | 2003-10-08 | 2011-05-15 | Zao Nikon Co Ltd | Belichtungsgerät, substrattrageverfahren, belichtungsverfahren und verfahren zur herstellung einer vorrichtung |
TWI553701B (zh) | 2003-10-09 | 2016-10-11 | 尼康股份有限公司 | Exposure apparatus and exposure method, component manufacturing method |
EP1524557A1 (en) * | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411653B2 (en) * | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
EP3392713A1 (en) | 2003-10-31 | 2018-10-24 | Nikon Corporation | Immersion exposure apparatus and method |
US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2717295B1 (en) | 2003-12-03 | 2018-07-18 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing a device |
KR101681852B1 (ko) | 2003-12-15 | 2016-12-01 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
WO2005057635A1 (ja) * | 2003-12-15 | 2005-06-23 | Nikon Corporation | 投影露光装置及びステージ装置、並びに露光方法 |
US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
JP2005191394A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
KR101135232B1 (ko) | 2004-01-20 | 2012-04-12 | 칼 짜이스 에스엠테 게엠베하 | 마이크로 리소그래픽 투영 노광 장치 |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
US7990516B2 (en) | 2004-02-03 | 2011-08-02 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with liquid detection apparatus |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI606485B (zh) | 2004-03-25 | 2017-11-21 | 尼康股份有限公司 | 曝光裝置、曝光方法、及元件製造方法 |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101833247B (zh) | 2004-06-04 | 2013-11-06 | 卡尔蔡司Smt有限责任公司 | 微光刻投影曝光系统的投影物镜的光学测量的测量系统 |
US8520184B2 (en) | 2004-06-09 | 2013-08-27 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with measuring device |
US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
EP3098835B1 (en) * | 2004-06-21 | 2017-07-26 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
US8698998B2 (en) * | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4894515B2 (ja) * | 2004-07-12 | 2012-03-14 | 株式会社ニコン | 露光装置、デバイス製造方法、及び液体検出方法 |
US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4983257B2 (ja) * | 2004-08-18 | 2012-07-25 | 株式会社ニコン | 露光装置、デバイス製造方法、計測部材、及び計測方法 |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TW201804516A (zh) | 2004-09-17 | 2018-02-01 | 尼康股份有限公司 | 曝光裝置、曝光方法及元件製造方法 |
US7522261B2 (en) * | 2004-09-24 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7355674B2 (en) * | 2004-09-28 | 2008-04-08 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and computer program product |
US7894040B2 (en) | 2004-10-05 | 2011-02-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7379155B2 (en) | 2004-10-18 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7583357B2 (en) * | 2004-11-12 | 2009-09-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7414699B2 (en) * | 2004-11-12 | 2008-08-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7423720B2 (en) | 2004-11-12 | 2008-09-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7161654B2 (en) * | 2004-12-02 | 2007-01-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7403261B2 (en) * | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7450217B2 (en) | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
DE602006012746D1 (de) | 2005-01-14 | 2010-04-22 | Asml Netherlands Bv | Lithografische Vorrichtung und Herstellungsverfahren |
US8692973B2 (en) * | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
KR101427056B1 (ko) | 2005-01-31 | 2014-08-05 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7282701B2 (en) * | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7684010B2 (en) * | 2005-03-09 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing |
US7411654B2 (en) * | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US7468779B2 (en) * | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7535644B2 (en) * | 2005-08-12 | 2009-05-19 | Asml Netherlands B.V. | Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7357768B2 (en) * | 2005-09-22 | 2008-04-15 | William Marshall | Recliner exerciser |
US20070124987A1 (en) * | 2005-12-05 | 2007-06-07 | Brown Jeffrey K | Electronic pest control apparatus |
KR100768849B1 (ko) * | 2005-12-06 | 2007-10-22 | 엘지전자 주식회사 | 계통 연계형 연료전지 시스템의 전원공급장치 및 방법 |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446859B2 (en) * | 2006-01-27 | 2008-11-04 | International Business Machines Corporation | Apparatus and method for reducing contamination in immersion lithography |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
EP2005222A4 (en) * | 2006-04-03 | 2010-07-28 | COMPARED TO IMMERSION LIQUIDS SOLVOPHOBE INSERTION SURFACES AND OPTICAL WINDOWS | |
US9477158B2 (en) * | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
US7656502B2 (en) * | 2006-06-22 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG143137A1 (en) | 2006-11-13 | 2008-06-27 | Asml Netherlands Bv | Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system |
US7843548B2 (en) * | 2006-11-13 | 2010-11-30 | Asml Netherlands B.V. | Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
KR100843709B1 (ko) * | 2007-02-05 | 2008-07-04 | 삼성전자주식회사 | 액체 실링 유니트 및 이를 갖는 이멀젼 포토리소그래피장치 |
US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
US7692765B2 (en) | 2007-02-21 | 2010-04-06 | Asml Netherlands B.V. | Lithographic apparatus and method of removing liquid |
CN100462848C (zh) * | 2007-03-15 | 2009-02-18 | 浙江大学 | 浸没式光刻系统中的液体供给及回收的密封控制装置 |
US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
NL1036186A1 (nl) * | 2007-12-03 | 2009-06-04 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL1036579A1 (nl) * | 2008-02-19 | 2009-08-20 | Asml Netherlands Bv | Lithographic apparatus and methods. |
NL1036631A1 (nl) | 2008-03-24 | 2009-09-25 | Asml Netherlands Bv | Immersion Lithographic Apparatus and Device Manufacturing Method. |
KR101448152B1 (ko) * | 2008-03-26 | 2014-10-07 | 삼성전자주식회사 | 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서 |
NL1036715A1 (nl) | 2008-04-16 | 2009-10-19 | Asml Netherlands Bv | Lithographic apparatus. |
NL1036709A1 (nl) | 2008-04-24 | 2009-10-27 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL1036835A1 (nl) | 2008-05-08 | 2009-11-11 | Asml Netherlands Bv | Lithographic Apparatus and Method. |
US8421993B2 (en) | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
EP2131241B1 (en) | 2008-05-08 | 2019-07-31 | ASML Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
ATE548679T1 (de) | 2008-05-08 | 2012-03-15 | Asml Netherlands Bv | Lithografische immersionsvorrichtung, trocknungsvorrichtung, immersionsmetrologievorrichtung und verfahren zur herstellung einer vorrichtung |
EP2128703A1 (en) | 2008-05-28 | 2009-12-02 | ASML Netherlands BV | Lithographic Apparatus and a Method of Operating the Apparatus |
NL1036924A1 (nl) | 2008-06-02 | 2009-12-03 | Asml Netherlands Bv | Substrate table, lithographic apparatus and device manufacturing method. |
EP2131242A1 (en) | 2008-06-02 | 2009-12-09 | ASML Netherlands B.V. | Substrate table, lithographic apparatus and device manufacturing method |
NL2002964A1 (nl) | 2008-06-16 | 2009-12-17 | Asml Netherlands Bv | Lithographic Apparatus, a Metrology Apparatus and a Method of Using the Apparatus. |
EP2136250A1 (en) | 2008-06-18 | 2009-12-23 | ASML Netherlands B.V. | Lithographic apparatus and method |
NL2002983A1 (nl) | 2008-06-26 | 2009-12-29 | Asml Netherlands Bv | A lithographic apparatus and a method of operating the lithographic apparatus. |
JP4922359B2 (ja) | 2008-07-25 | 2012-04-25 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体ハンドリング構造、リソグラフィ装置及びデバイス製造方法 |
NL2003111A1 (nl) | 2008-07-25 | 2010-01-26 | Asml Netherlands Bv | Method of designing sets of mask patterns, sets of mask patterns, and device manufacturing method. |
NL2003226A (en) | 2008-08-19 | 2010-03-09 | Asml Netherlands Bv | Lithographic apparatus, drying device, metrology apparatus and device manufacturing method. |
SG159467A1 (en) * | 2008-09-02 | 2010-03-30 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method |
NL2003363A (en) | 2008-09-10 | 2010-03-15 | Asml Netherlands Bv | Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method. |
NL2003392A (en) | 2008-09-17 | 2010-03-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL2003362A (en) | 2008-10-16 | 2010-04-19 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2003333A (en) | 2008-10-23 | 2010-04-26 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2003575A (en) | 2008-10-29 | 2010-05-03 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2003638A (en) | 2008-12-03 | 2010-06-07 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2003758A (en) | 2008-12-04 | 2010-06-07 | Asml Netherlands Bv | A member with a cleaning surface and a method of removing contamination. |
TWI438577B (zh) | 2008-12-08 | 2014-05-21 | Asml Netherlands Bv | 微影裝置及器件製造方法 |
EP2196857A3 (en) | 2008-12-09 | 2010-07-21 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
JP5001343B2 (ja) | 2008-12-11 | 2012-08-15 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法 |
EP2221669A3 (en) | 2009-02-19 | 2011-02-09 | ASML Netherlands B.V. | A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method |
NL2004305A (en) | 2009-03-13 | 2010-09-14 | Asml Netherlands Bv | Substrate table, immersion lithographic apparatus and device manufacturing method. |
JP2010251745A (ja) | 2009-04-10 | 2010-11-04 | Asml Netherlands Bv | 液浸リソグラフィ装置及びデバイス製造方法 |
NL2004362A (en) | 2009-04-10 | 2010-10-12 | Asml Netherlands Bv | A fluid handling device, an immersion lithographic apparatus and a device manufacturing method. |
NL2004497A (en) | 2009-05-01 | 2010-11-02 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL2004523A (en) | 2009-05-08 | 2010-11-09 | Asml Netherlands Bv | Immersion lithographic apparatus and device manufacturing method. |
NL2004540A (en) | 2009-05-14 | 2010-11-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL2004547A (en) | 2009-05-14 | 2010-11-18 | Asml Netherlands Bv | An immersion lithographic apparatus and a device manufacturing method. |
SG166747A1 (en) | 2009-05-26 | 2010-12-29 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method |
JP5016705B2 (ja) | 2009-06-09 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体ハンドリング構造 |
EP2264529A3 (en) | 2009-06-16 | 2011-02-09 | ASML Netherlands B.V. | A lithographic apparatus, a method of controlling the apparatus and a method of manufacturing a device using a lithographic apparatus |
NL2004907A (en) | 2009-06-19 | 2010-12-20 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
EP2264528A1 (en) | 2009-06-19 | 2010-12-22 | ASML Netherlands B.V. | Sensor and lithographic apparatus |
NL2004808A (en) | 2009-06-30 | 2011-01-12 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2004820A (en) | 2009-06-30 | 2011-01-04 | Asml Netherlands Bv | Lithographic apparatus and a method of measuring flow rate in a two phase flow. |
NL2004807A (en) | 2009-06-30 | 2011-01-04 | Asml Netherlands Bv | Substrate table for a lithographic apparatus, litographic apparatus, method of using a substrate table and device manufacturing method. |
NL2004980A (en) | 2009-07-13 | 2011-01-17 | Asml Netherlands Bv | Heat transfers assembly, lithographic apparatus and manufacturing method. |
NL2005009A (en) | 2009-07-27 | 2011-01-31 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2005322A (en) | 2009-09-11 | 2011-03-14 | Asml Netherlands Bv | A shutter member, a lithographic apparatus and device manufacturing method. |
NL2005120A (en) | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2005089A (nl) | 2009-09-23 | 2011-03-28 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2005208A (en) * | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
NL2005207A (en) | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
NL2005167A (en) | 2009-10-02 | 2011-04-05 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
NL2005478A (en) | 2009-11-17 | 2011-05-18 | Asml Netherlands Bv | Lithographic apparatus, removable member and device manufacturing method. |
NL2005479A (en) | 2009-11-17 | 2011-05-18 | Asml Netherlands Bv | Lithographic apparatus, removable member and device manufacturing method. |
NL2005528A (en) | 2009-12-02 | 2011-06-07 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
NL2005610A (en) | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and surface cleaning method. |
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CA2784148A1 (en) * | 2009-12-28 | 2011-07-28 | Pioneer Hi-Bred International, Inc. | Sorghum fertility restorer genotypes and methods of marker-assisted selection |
NL2005874A (en) | 2010-01-22 | 2011-07-25 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
NL2005951A (en) | 2010-02-02 | 2011-08-03 | Asml Netherlands Bv | Lithographic apparatus and a device manufacturing method. |
NL2006054A (en) | 2010-02-09 | 2011-08-10 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
NL2005974A (en) | 2010-02-12 | 2011-08-15 | Asml Netherlands Bv | Lithographic apparatus and a device manufacturing method. |
NL2006076A (en) | 2010-03-04 | 2011-09-06 | Asml Netherlands Bv | A lithographic apparatus and a method of manufacturing a device using a lithographic apparatus. |
JP5269128B2 (ja) | 2010-03-12 | 2013-08-21 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置および方法 |
NL2006244A (en) | 2010-03-16 | 2011-09-19 | Asml Netherlands Bv | Lithographic apparatus, cover for use in a lithographic apparatus and method for designing a cover for use in a lithographic apparatus. |
NL2006243A (en) | 2010-03-19 | 2011-09-20 | Asml Netherlands Bv | A lithographic apparatus, an illumination system, a projection system and a method of manufacturing a device using a lithographic apparatus. |
NL2006389A (en) | 2010-04-15 | 2011-10-18 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and a device manufacturing method. |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
NL2006272A (en) | 2010-05-04 | 2011-11-07 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
NL2006615A (en) | 2010-05-11 | 2011-11-14 | Asml Netherlands Bv | Fluid handling structure, lithographic apparatus and device manufacturing method. |
JP5313293B2 (ja) | 2010-05-19 | 2013-10-09 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、リソグラフィ装置で使用する流体ハンドリング構造およびデバイス製造方法 |
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NL2006818A (en) | 2010-07-02 | 2012-01-03 | Asml Netherlands Bv | A method of adjusting speed and/or routing of a table movement plan and a lithographic apparatus. |
NL2006913A (en) | 2010-07-16 | 2012-01-17 | Asml Netherlands Bv | Lithographic apparatus and method. |
EP2423749B1 (en) | 2010-08-24 | 2013-09-11 | ASML Netherlands BV | A lithographic apparatus and device manufacturing method |
NL2008183A (en) | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method. |
NL2008751A (en) | 2011-06-06 | 2012-12-10 | Asml Netherlands Bv | Temperature sensing probe, burl plate, lithographic apparatus and method. |
US20130169944A1 (en) * | 2011-12-28 | 2013-07-04 | Nikon Corporation | Exposure apparatus, exposure method, device manufacturing method, program, and recording medium |
CN105527797B (zh) * | 2014-09-28 | 2018-05-04 | 上海微电子装备(集团)股份有限公司 | 浸液系统及其供给控制方法 |
CN111381448B (zh) * | 2018-12-28 | 2021-05-25 | 上海微电子装备(集团)股份有限公司 | 浸没光刻设备的液体控制系统及方法 |
CN114402263A (zh) * | 2019-09-13 | 2022-04-26 | Asml荷兰有限公司 | 流体处置系统和光刻设备 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS5919912A (ja) * | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
JPS63157419A (ja) * | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
WO1999001797A1 (en) * | 1997-07-03 | 1999-01-14 | John Samuel Batchelder | Method for optical inspection and lithography |
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2004506290A (ja) * | 2000-08-08 | 2004-02-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 光学的に走査可能な情報担体を製造する方法 |
WO2005022615A1 (ja) * | 2003-08-29 | 2005-03-10 | Nikon Corporation | 液体回収装置、露光装置、露光方法及びデバイス製造方法 |
JP2005101488A (ja) * | 2002-12-10 | 2005-04-14 | Nikon Corp | 露光装置及び露光方法、デバイス製造方法 |
Family Cites Families (137)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE221563C (ja) | ||||
DE206607C (ja) | ||||
DE224448C (ja) | ||||
DE242880C (ja) | ||||
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
EP0023231B1 (de) | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPH0747157B2 (ja) | 1985-02-15 | 1995-05-24 | 株式会社日立製作所 | 超純水製造装置 |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH05304072A (ja) | 1992-04-08 | 1993-11-16 | Nec Corp | 半導体装置の製造方法 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JPH06181157A (ja) | 1992-12-15 | 1994-06-28 | Nikon Corp | 低発塵性の装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JP3316833B2 (ja) * | 1993-03-26 | 2002-08-19 | 株式会社ニコン | 走査露光方法、面位置設定装置、走査型露光装置、及び前記方法を使用するデバイス製造方法 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
WO1998009278A1 (en) * | 1996-08-26 | 1998-03-05 | Digital Papyrus Technologies | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JPH10116760A (ja) | 1996-10-08 | 1998-05-06 | Nikon Corp | 露光装置及び基板保持装置 |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
AU1505699A (en) | 1997-12-12 | 1999-07-05 | Nikon Corporation | Projection exposure method and projection aligner |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
DE19963587B4 (de) * | 1999-12-29 | 2007-10-04 | Carl Zeiss Smt Ag | Projektions-Belichtungsanlage |
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
JP2001358056A (ja) * | 2000-06-15 | 2001-12-26 | Canon Inc | 露光装置 |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US20020109823A1 (en) * | 2001-02-09 | 2002-08-15 | Nikon Corporation. | Wafer stage assembly |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
WO2003040830A2 (en) * | 2001-11-07 | 2003-05-15 | Applied Materials, Inc. | Optical spot grid array printer |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1420299B1 (en) * | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
SG135052A1 (en) | 2002-11-12 | 2007-09-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE60319658T2 (de) | 2002-11-29 | 2009-04-02 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
KR101157002B1 (ko) | 2002-12-10 | 2012-06-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
JP4179283B2 (ja) | 2002-12-10 | 2008-11-12 | 株式会社ニコン | 光学素子及びその光学素子を用いた投影露光装置 |
KR20050085235A (ko) * | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
SG152063A1 (en) | 2002-12-10 | 2009-05-29 | Nikon Corp | Exposure apparatus and method for producing device |
SG171468A1 (en) | 2002-12-10 | 2011-06-29 | Nikon Corp | Exposure apparatus and method for producing device |
AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
SG157962A1 (en) * | 2002-12-10 | 2010-01-29 | Nikon Corp | Exposure apparatus and method for producing device |
KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
WO2004053957A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 面位置検出装置、露光方法、及びデバイス製造方法 |
ATE424026T1 (de) | 2002-12-13 | 2009-03-15 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
JP4364805B2 (ja) | 2002-12-19 | 2009-11-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上にスポットを照射する方法及び装置 |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
WO2004057590A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
JP4604452B2 (ja) * | 2003-02-26 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
KR20180089562A (ko) | 2003-04-10 | 2018-08-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
CN1771463A (zh) | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
KR101323993B1 (ko) | 2003-04-10 | 2013-10-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
KR101318542B1 (ko) | 2003-04-11 | 2013-10-16 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
KR101697896B1 (ko) | 2003-04-11 | 2017-01-18 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
KR20050122269A (ko) | 2003-04-17 | 2005-12-28 | 가부시키가이샤 니콘 | 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
KR101528016B1 (ko) * | 2003-06-13 | 2015-06-12 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1639391A4 (en) | 2003-07-01 | 2009-04-29 | Nikon Corp | USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR101590686B1 (ko) | 2003-09-03 | 2016-02-01 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
JP4605014B2 (ja) | 2003-10-28 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、デバイスの製造方法 |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
EP1695148B1 (en) | 2003-11-24 | 2015-10-28 | Carl Zeiss SMT GmbH | Immersion objective |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
KR101681852B1 (ko) * | 2003-12-15 | 2016-12-01 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2003
- 2003-12-23 US US10/743,271 patent/US7394521B2/en not_active Expired - Lifetime
-
2004
- 2004-12-15 JP JP2006545996A patent/JP4157146B2/ja not_active Expired - Fee Related
- 2004-12-15 EP EP10180289.0A patent/EP2259139B1/en not_active Expired - Lifetime
- 2004-12-15 EP EP04803901A patent/EP1697799A2/en not_active Withdrawn
- 2004-12-15 WO PCT/EP2004/014282 patent/WO2005064405A2/en not_active Application Discontinuation
- 2004-12-15 EP EP17181223.3A patent/EP3287848B1/en not_active Expired - Lifetime
- 2004-12-15 CN CN2009101391092A patent/CN101872129B/zh not_active Expired - Lifetime
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Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
US4480910A (en) * | 1981-03-18 | 1984-11-06 | Hitachi, Ltd. | Pattern forming apparatus |
JPS5919912A (ja) * | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
JPS63157419A (ja) * | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
WO1999001797A1 (en) * | 1997-07-03 | 1999-01-14 | John Samuel Batchelder | Method for optical inspection and lithography |
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2004506290A (ja) * | 2000-08-08 | 2004-02-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 光学的に走査可能な情報担体を製造する方法 |
JP2005101488A (ja) * | 2002-12-10 | 2005-04-14 | Nikon Corp | 露光装置及び露光方法、デバイス製造方法 |
WO2005022615A1 (ja) * | 2003-08-29 | 2005-03-10 | Nikon Corporation | 液体回収装置、露光装置、露光方法及びデバイス製造方法 |
Also Published As
Publication number | Publication date |
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WO2005064405A2 (en) | 2005-07-14 |
CN1898606A (zh) | 2007-01-17 |
TW200534031A (en) | 2005-10-16 |
CN100507721C (zh) | 2009-07-01 |
EP2259139A1 (en) | 2010-12-08 |
US7710541B2 (en) | 2010-05-04 |
JP2007515798A (ja) | 2007-06-14 |
US7394521B2 (en) | 2008-07-01 |
EP2259139B1 (en) | 2017-08-23 |
WO2005064405A3 (en) | 2006-03-09 |
KR100855337B1 (ko) | 2008-09-04 |
KR20060103271A (ko) | 2006-09-28 |
EP3287848B1 (en) | 2018-11-07 |
CN101872129B (zh) | 2013-01-23 |
JP4157146B2 (ja) | 2008-09-24 |
US20050134815A1 (en) | 2005-06-23 |
JP2008219020A (ja) | 2008-09-18 |
TWI261151B (en) | 2006-09-01 |
EP1697799A2 (en) | 2006-09-06 |
EP3287848A1 (en) | 2018-02-28 |
US20080186459A1 (en) | 2008-08-07 |
CN101872129A (zh) | 2010-10-27 |
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