JP2013070053A - 不純物濃度を選択的に減少させたiii−v族デバイス構造 - Google Patents
不純物濃度を選択的に減少させたiii−v族デバイス構造 Download PDFInfo
- Publication number
- JP2013070053A JP2013070053A JP2012203496A JP2012203496A JP2013070053A JP 2013070053 A JP2013070053 A JP 2013070053A JP 2012203496 A JP2012203496 A JP 2012203496A JP 2012203496 A JP2012203496 A JP 2012203496A JP 2013070053 A JP2013070053 A JP 2013070053A
- Authority
- JP
- Japan
- Prior art keywords
- impurity concentration
- group iii
- iii
- transition body
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 title claims abstract description 300
- 230000007704 transition Effects 0.000 claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 150000004767 nitrides Chemical class 0.000 claims description 119
- 230000003247 decreasing effect Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 230000007423 decrease Effects 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 11
- -1 nitride compound Chemical class 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 108
- 239000000463 material Substances 0.000 description 35
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 29
- 229910002601 GaN Inorganic materials 0.000 description 28
- 230000005684 electric field Effects 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000009467 reduction Effects 0.000 description 12
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 241000894007 species Species 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 235000018783 Dacrycarpus dacrydioides Nutrition 0.000 description 2
- 244000288671 Dacrycarpus dacrydioides Species 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02584—Delta-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】半導体構造は、基板、基板上方の遷移体、及び遷移体上方に底面を有するIII−V族中間体を備える。半導体構造はさらに、III−V族中間体の頂面上方にIII−V族デバイス層を備える。III−V族中間体213は、前記底面211において高く、前記頂面213において低くなる形で連続的に減少された不純物濃度を有する。
【選択図】図3
Description
本願は、2011年9月21日に「Impurity Graded III-Nitride Material Structures and Methods」とのタイトルで出願された係属中の米国特許仮出願第61/537,540号に基づく優先権を主張するものである。この係属中の仮特許出願の全内容は、参照により本明細書に全体的に組み入れられる。
本明細書では、「III−V族」との用語は、V族元素及び少なくとも1つのIII族元素を有する化合物半導体を意味する。また、「III族窒化物」又は「III−N」は、窒素(N)と、少なくとも1つのIII族元素とを含む化合物半導体を意味し、当該III族元素は、アルミニウム(Al)、ガリウム(Ga)、インジウム(In)、及びボロン(B)など、並びに、III族元素の合金(例えば、これらに限定されないが、窒化アルミニウムガリウム(AlxGa(1−x)N)、窒化インジウムガリウム(InyGa(1−y)N)、窒化アルミニウムインジウムガリウム(AlxInyGa(1−x−y)N)、窒化リン化ヒ化ガリウム(GaAsaPbN(1−a−b))、窒化リン化ヒ化アルミニウムインジウムガリウム(AlxInyGa(1−x−y)AsaPbN(1−a−b))など)を含む。III族窒化物はさらに、一般的に、Ga極、N極、半極性、又は無極性の結晶方位などの極性を意味するが、これらに限定されない。また、III族窒化物材料は、ウルツ鉱、閃亜鉛鉱、及び混合ポリタイプのいずれかを含み、単結晶、モノクリスタル、多結晶、又はアモルファス構造を含み得る。
Claims (20)
- 基板と、
前記基板上の遷移体と、
前記遷移体上方に底面を有するIII−V族中間体と、
前記III−V族中間体の頂面上方のIII−V族デバイス層と、を備え、
前記III−V族中間体は、前記底面において高く、前記頂面において低くなる形で連続的に減少された不純物濃度を有する半導体構造。 - 前記不純物濃度を形成する不純物は、P型不純物である、請求項1記載の半導体構造。
- 前記連続的に減少された不純物濃度は、連続的に減少された炭素濃度を含む、請求項1記載の半導体構造。
- 前記連続的に減少された不純物濃度は、複数の不純物種を含む、請求項1記載の半導体構造。
- 前記III−V族中間体は、前記底面において第1のIII族窒化物化合物を有し、前記底面より上方において第2のIII族窒化物化合物を有する、組成勾配のあるIII族窒化物体を備える、請求項1記載の半導体構造。
- 前記III−V族デバイス層は、III族窒化物電界効果トランジスタ(FET)及びIII族窒化物高電子移動度トランジスタ(HEMT)の少なくとも一方を有する、請求項1記載の半導体構造。
- 前記遷移体は、III−V族遷移体を有し、当該III−V族遷移体は、当該III−V族遷移体の底面における不純物濃度から当該III−V族遷移体の頂面における不純物濃度まで選択的に変化された不純物濃度を有する、請求項1記載の半導体構造。
- 前記選択的に変化された不純物濃度は、前記III−V族遷移体の底面における不純物濃度から前記III−V族遷移体の頂面における不純物濃度まで段階的に変化されている、請求項7記載の半導体構造。
- 前記選択的に変化された不純物濃度は、前記III−V族遷移体の底面における不純物濃度と前記III−V族遷移体の頂面における不純物濃度との間で増加及び減少する、請求項7記載の半導体構造。
- 基板上に遷移体を形成するステップと、
前記遷移体上方に底面を有するIII−V族中間体を形成するステップと、
前記III−V族中間体の頂面上方にIII−V族デバイス層を形成するステップと、を含み、
前記III−V族中間体を形成するステップは、前記底面において高く、前記頂面において低くなる形で連続的に減少された不純物濃度を形成するステップを含む方法。 - 前記III−V族中間体を形成するステップは、当該III−V族中間体の成長速度を、前記底面において高く、前記頂面において低くなる形で選択的に減少させるステップを含む、請求項10記載の方法。
- 前記III−V族中間体を形成するステップは、当該III−V族中間体の成長温度を、前記底面において低く、前記頂面において高くなる形で選択的に上昇させるステップを含む、請求項10記載の方法。
- 前記不純物濃度を形成する不純物は、P型不純物である、請求項10記載の方法。
- 前記連続的に減少された不純物濃度を形成するステップは、連続的に減少された炭素濃度を形成するステップを含む、請求項10記載の方法。
- 前記連続的に減少された不純物濃度は、複数の不純物種を含む、請求項10記載の方法。
- 前記III−V族中間体は、前記底面において第1のIII族窒化物化合物を有し、前記底面より上方において第2のIII族窒化物化合物を有する、組成勾配のあるIII族窒化物体を備える、請求項10記載の方法。
- 前記III−V族デバイス層は、III族窒化物電界効果トランジスタ(FET)及びIII族窒化物高電子移動度トランジスタ(HEMT)の少なくとも一方を有する、請求項10記載の方法。
- 前記遷移体を形成するステップは、III−V族遷移体を形成するステップを含み、当該III−V族遷移体は、当該III−V族遷移体の底面における不純物濃度から当該III−V族遷移体の頂面における不純物濃度まで選択的に変化された不純物濃度を有する、請求項10記載の方法。
- 前記選択的に変化された不純物濃度は、前記III−V族遷移体の底面における不純物濃度から前記III−V族遷移体の頂面における不純物濃度まで段階的に減少されている、請求項18記載の方法。
- 前記選択的に変化された不純物濃度は、前記III−V族遷移体の底面における不純物濃度と前記III−V族遷移体の頂面における不純物濃度との間で増加及び減少される、請求項18記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161537540P | 2011-09-21 | 2011-09-21 | |
US61/537,540 | 2011-09-21 | ||
US13/604,517 | 2012-09-05 | ||
US13/604,517 US8796738B2 (en) | 2011-09-21 | 2012-09-05 | Group III-V device structure having a selectively reduced impurity concentration |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013070053A true JP2013070053A (ja) | 2013-04-18 |
JP5722852B2 JP5722852B2 (ja) | 2015-05-27 |
Family
ID=47076095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012203496A Active JP5722852B2 (ja) | 2011-09-21 | 2012-09-14 | 不純物濃度を選択的に減少させたiii−v族デバイス構造 |
Country Status (3)
Country | Link |
---|---|
US (6) | US8796738B2 (ja) |
EP (1) | EP2573818A1 (ja) |
JP (1) | JP5722852B2 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140139346A (ko) * | 2013-05-27 | 2014-12-05 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR20140139890A (ko) * | 2013-05-28 | 2014-12-08 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR20150000752A (ko) * | 2013-06-25 | 2015-01-05 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR20150000753A (ko) * | 2013-06-25 | 2015-01-05 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
WO2015008532A1 (ja) * | 2013-07-19 | 2015-01-22 | シャープ株式会社 | 電界効果トランジスタ |
KR20150012119A (ko) * | 2013-07-24 | 2015-02-03 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
WO2016143381A1 (ja) * | 2015-03-09 | 2016-09-15 | エア・ウォーター株式会社 | 化合物半導体基板 |
KR20160138091A (ko) | 2014-04-09 | 2016-12-02 | 산켄덴키 가부시키가이샤 | 반도체 기판의 제조 방법, 반도체 소자의 제조 방법, 반도체 기판, 및 반도체 소자 |
KR20160138090A (ko) | 2014-04-09 | 2016-12-02 | 산켄덴키 가부시키가이샤 | 반도체 기판 및 반도체 소자 |
KR20160141756A (ko) | 2014-04-18 | 2016-12-09 | 산켄덴키 가부시키가이샤 | 반도체 기판 및 반도체 소자 |
JP2018190959A (ja) * | 2017-05-03 | 2018-11-29 | グローバルウェーハズ カンパニー リミテッドGlobalWafers Co.,Ltd. | 半導体のヘテロ構造およびその形成方法 |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8981380B2 (en) * | 2010-03-01 | 2015-03-17 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
US9219058B2 (en) * | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
US8796738B2 (en) | 2011-09-21 | 2014-08-05 | International Rectifier Corporation | Group III-V device structure having a selectively reduced impurity concentration |
US8759879B1 (en) * | 2013-05-03 | 2014-06-24 | Texas Instruments Incorporated | RESURF III-nitride HEMTs |
JP2015070064A (ja) * | 2013-09-27 | 2015-04-13 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
US20150115327A1 (en) | 2013-10-30 | 2015-04-30 | International Rectifier Corporation | Group III-V Device Including a Buffer Termination Body |
JP6175009B2 (ja) * | 2014-02-06 | 2017-08-02 | 住友化学株式会社 | 高耐圧窒化ガリウム系半導体デバイス及びその製造方法 |
US10322481B2 (en) * | 2014-03-06 | 2019-06-18 | Infineon Technologies Ag | Support structure and method of forming a support structure |
JP2015176936A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | 半導体装置 |
JP2016004948A (ja) * | 2014-06-18 | 2016-01-12 | 株式会社東芝 | 半導体装置 |
US9620598B2 (en) | 2014-08-05 | 2017-04-11 | Semiconductor Components Industries, Llc | Electronic device including a channel layer including gallium nitride |
US9627530B2 (en) | 2014-08-05 | 2017-04-18 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US10062756B2 (en) * | 2014-10-30 | 2018-08-28 | Semiconductor Components Industries, Llc | Semiconductor structure including a doped buffer layer and a channel layer and a process of forming the same |
US10388539B2 (en) | 2015-07-24 | 2019-08-20 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US9905500B2 (en) | 2015-07-24 | 2018-02-27 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US9799646B2 (en) | 2015-07-24 | 2017-10-24 | Semiconductor Components Industries, Llc | Cascode configured semiconductor component |
US9882020B2 (en) | 2015-07-24 | 2018-01-30 | Semiconductor Components Industries, Llc | Cascode configured semiconductor component |
US9818677B2 (en) | 2015-07-24 | 2017-11-14 | Semiconductor Components Industries, Llc | Semiconductor component having group III nitride semiconductor device mounted on substrate and interconnected to lead frame |
US9780019B2 (en) | 2015-07-24 | 2017-10-03 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US9917184B2 (en) | 2015-07-24 | 2018-03-13 | Semiconductor Components Industries, Llc | Semiconductor component that includes a clamping structure and method of manufacturing the semiconductor component |
US9837399B2 (en) | 2015-07-24 | 2017-12-05 | Semiconductor Components Industries, Llc | Cascode configured semiconductor component and method |
US10128174B2 (en) | 2015-07-24 | 2018-11-13 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US9620443B2 (en) | 2015-07-24 | 2017-04-11 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US9818674B2 (en) | 2015-07-24 | 2017-11-14 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US9735095B2 (en) | 2015-07-24 | 2017-08-15 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
US9653387B2 (en) | 2015-07-24 | 2017-05-16 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
JP6547581B2 (ja) * | 2015-10-22 | 2019-07-24 | 三菱電機株式会社 | 半導体装置 |
US9728610B1 (en) | 2016-02-05 | 2017-08-08 | Infineon Technologies Americas Corp. | Semiconductor component with a multi-layered nucleation body |
JP2017157711A (ja) * | 2016-03-02 | 2017-09-07 | 株式会社東芝 | 半導体装置 |
US9954089B2 (en) * | 2016-06-20 | 2018-04-24 | Infineon Technologies Americas Corp. | Low dislocation density III-nitride semiconductor component |
WO2018039236A1 (en) * | 2016-08-22 | 2018-03-01 | The Regents Of The University Of California | Semiconductor heterostructure with reduced unintentional calcium impurity incorporation |
US10636899B2 (en) | 2016-11-15 | 2020-04-28 | Infineon Technologies Austria Ag | High electron mobility transistor with graded back-barrier region |
JP6652042B2 (ja) * | 2016-12-13 | 2020-02-19 | 三菱電機株式会社 | Iii−v族窒化物半導体エピタキシャルウェハの製造方法 |
CN108807291B (zh) * | 2017-04-28 | 2020-06-26 | 环球晶圆股份有限公司 | 外延用基板及其制造方法 |
JP7007548B2 (ja) * | 2017-05-16 | 2022-01-24 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
FR3071854A1 (fr) * | 2017-10-03 | 2019-04-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un composant electronique a heterojonction muni d'une couche barriere enterree |
US11162189B2 (en) * | 2018-03-02 | 2021-11-02 | Dexerials Corporation | Semiconductor substrate, gallium nitride single crystal, and method for producing gallium nitride single crystal |
CN111341895A (zh) * | 2020-03-10 | 2020-06-26 | 淄博职业学院 | 一种发光二极管 |
US20220328673A1 (en) * | 2021-04-12 | 2022-10-13 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
US12125902B2 (en) | 2021-04-12 | 2024-10-22 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
US12125801B2 (en) | 2021-04-12 | 2024-10-22 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN115312596A (zh) * | 2021-05-07 | 2022-11-08 | 联华电子股份有限公司 | 高电子迁移率晶体管及其制作方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003534664A (ja) * | 2000-05-24 | 2003-11-18 | レイセオン・カンパニー | 半導体構造体 |
JP2004055579A (ja) * | 2002-07-16 | 2004-02-19 | Fujitsu Quantum Devices Ltd | 電界効果トランジスタ及びその製造方法 |
JP2004207472A (ja) * | 2002-12-25 | 2004-07-22 | Sumitomo Chem Co Ltd | 化合物半導体エピタキシャル基板及びその製造方法 |
JP2010199568A (ja) * | 2009-01-28 | 2010-09-09 | Sumitomo Chemical Co Ltd | 半導体基板の製造方法および半導体基板 |
JP2011009722A (ja) * | 2009-05-26 | 2011-01-13 | Sumitomo Chemical Co Ltd | 半導体基板、半導体基板の製造方法、および電子デバイス |
JP2011166067A (ja) * | 2010-02-15 | 2011-08-25 | Panasonic Corp | 窒化物半導体装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5192987A (en) | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US6849882B2 (en) | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
JP3645233B2 (ja) | 2001-06-07 | 2005-05-11 | 日本電信電話株式会社 | 半導体素子 |
US7112830B2 (en) | 2002-11-25 | 2006-09-26 | Apa Enterprises, Inc. | Super lattice modification of overlying transistor |
US7382001B2 (en) | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
JP4792814B2 (ja) | 2005-05-26 | 2011-10-12 | 住友電気工業株式会社 | 高電子移動度トランジスタ、電界効果トランジスタ、エピタキシャル基板、エピタキシャル基板を作製する方法およびiii族窒化物系トランジスタを作製する方法 |
US7326971B2 (en) * | 2005-06-08 | 2008-02-05 | Cree, Inc. | Gallium nitride based high-electron mobility devices |
KR101045573B1 (ko) | 2005-07-06 | 2011-07-01 | 인터내쇼널 렉티파이어 코포레이션 | Ⅲ족 질화물 인헨스먼트 모드 소자 |
US8183595B2 (en) | 2005-07-29 | 2012-05-22 | International Rectifier Corporation | Normally off III-nitride semiconductor device having a programmable gate |
US8482035B2 (en) | 2005-07-29 | 2013-07-09 | International Rectifier Corporation | Enhancement mode III-nitride transistors with single gate Dielectric structure |
US9157169B2 (en) | 2005-09-14 | 2015-10-13 | International Rectifier Corporation | Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
JP5064824B2 (ja) | 2006-02-20 | 2012-10-31 | 古河電気工業株式会社 | 半導体素子 |
US8791503B2 (en) | 2007-09-18 | 2014-07-29 | International Rectifier Corporation | III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture |
WO2009038809A1 (en) | 2007-09-20 | 2009-03-26 | International Rectifier Corporation | Enhancement mode iii-nitride semiconductor device with reduced electric field between the gate and the drain |
US7745853B2 (en) * | 2008-06-18 | 2010-06-29 | Chang Gung University | Multi-layer structure with a transparent gate |
US8350296B2 (en) | 2008-08-21 | 2013-01-08 | International Rectifier Corporation | Enhancement mode III-nitride device with floating gate and process for its manufacture |
JP2010239034A (ja) | 2009-03-31 | 2010-10-21 | Furukawa Electric Co Ltd:The | 半導体装置の製造方法および半導体装置 |
JP5188545B2 (ja) | 2009-09-14 | 2013-04-24 | コバレントマテリアル株式会社 | 化合物半導体基板 |
US8575660B2 (en) | 2009-10-14 | 2013-11-05 | International Rectifier Corporation | Group III-V semiconductor device with strain-relieving interlayers |
US8269259B2 (en) | 2009-12-07 | 2012-09-18 | International Rectifier Corporation | Gated AlGaN/GaN heterojunction Schottky device |
US9105703B2 (en) | 2010-03-22 | 2015-08-11 | International Rectifier Corporation | Programmable III-nitride transistor with aluminum-doped gate |
US20120153351A1 (en) | 2010-12-21 | 2012-06-21 | International Rectifier Corporation | Stress modulated group III-V semiconductor device and related method |
US8796738B2 (en) | 2011-09-21 | 2014-08-05 | International Rectifier Corporation | Group III-V device structure having a selectively reduced impurity concentration |
-
2012
- 2012-09-05 US US13/604,517 patent/US8796738B2/en active Active
- 2012-09-13 EP EP20120184278 patent/EP2573818A1/en not_active Withdrawn
- 2012-09-14 JP JP2012203496A patent/JP5722852B2/ja active Active
-
2014
- 2014-07-31 US US14/449,057 patent/US9129890B2/en active Active
- 2014-08-01 US US14/449,491 patent/US9437685B2/en active Active
-
2015
- 2015-09-03 US US14/844,283 patent/US9564492B2/en active Active
-
2017
- 2017-01-31 US US15/421,073 patent/US9831312B2/en active Active
- 2017-11-22 US US15/821,439 patent/US10084047B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003534664A (ja) * | 2000-05-24 | 2003-11-18 | レイセオン・カンパニー | 半導体構造体 |
JP2004055579A (ja) * | 2002-07-16 | 2004-02-19 | Fujitsu Quantum Devices Ltd | 電界効果トランジスタ及びその製造方法 |
JP2004207472A (ja) * | 2002-12-25 | 2004-07-22 | Sumitomo Chem Co Ltd | 化合物半導体エピタキシャル基板及びその製造方法 |
JP2010199568A (ja) * | 2009-01-28 | 2010-09-09 | Sumitomo Chemical Co Ltd | 半導体基板の製造方法および半導体基板 |
JP2011009722A (ja) * | 2009-05-26 | 2011-01-13 | Sumitomo Chemical Co Ltd | 半導体基板、半導体基板の製造方法、および電子デバイス |
JP2011166067A (ja) * | 2010-02-15 | 2011-08-25 | Panasonic Corp | 窒化物半導体装置 |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102067597B1 (ko) * | 2013-05-27 | 2020-01-17 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR20140139346A (ko) * | 2013-05-27 | 2014-12-05 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR20140139890A (ko) * | 2013-05-28 | 2014-12-08 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR102091516B1 (ko) * | 2013-05-28 | 2020-03-20 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR102111459B1 (ko) * | 2013-06-25 | 2020-05-15 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR102111458B1 (ko) * | 2013-06-25 | 2020-05-15 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR20150000753A (ko) * | 2013-06-25 | 2015-01-05 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR20150000752A (ko) * | 2013-06-25 | 2015-01-05 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
WO2015008532A1 (ja) * | 2013-07-19 | 2015-01-22 | シャープ株式会社 | 電界効果トランジスタ |
KR20150012119A (ko) * | 2013-07-24 | 2015-02-03 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR102077674B1 (ko) * | 2013-07-24 | 2020-02-14 | 엘지전자 주식회사 | 질화물 반도체 소자 및 그 제조 방법 |
KR20160138091A (ko) | 2014-04-09 | 2016-12-02 | 산켄덴키 가부시키가이샤 | 반도체 기판의 제조 방법, 반도체 소자의 제조 방법, 반도체 기판, 및 반도체 소자 |
KR20160138090A (ko) | 2014-04-09 | 2016-12-02 | 산켄덴키 가부시키가이샤 | 반도체 기판 및 반도체 소자 |
US10068985B2 (en) | 2014-04-09 | 2018-09-04 | Sanken Electric Co., Ltd. | Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device |
KR20160141756A (ko) | 2014-04-18 | 2016-12-09 | 산켄덴키 가부시키가이샤 | 반도체 기판 및 반도체 소자 |
US9876101B2 (en) | 2014-04-18 | 2018-01-23 | Sanken Electric Co., Ltd. | Semiconductor substrate and semiconductor device |
US10186421B2 (en) | 2015-03-09 | 2019-01-22 | Air Water Inc. | Composite semiconductor substrate |
KR20170122267A (ko) * | 2015-03-09 | 2017-11-03 | 에어 워터 가부시키가이샤 | 화합물 반도체 기판 |
JP2016167517A (ja) * | 2015-03-09 | 2016-09-15 | エア・ウォーター株式会社 | 化合物半導体基板 |
WO2016143381A1 (ja) * | 2015-03-09 | 2016-09-15 | エア・ウォーター株式会社 | 化合物半導体基板 |
KR102573938B1 (ko) * | 2015-03-09 | 2023-09-05 | 에어 워터 가부시키가이샤 | 화합물 반도체 기판 |
JP2018190959A (ja) * | 2017-05-03 | 2018-11-29 | グローバルウェーハズ カンパニー リミテッドGlobalWafers Co.,Ltd. | 半導体のヘテロ構造およびその形成方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2573818A1 (en) | 2013-03-27 |
US20170141192A1 (en) | 2017-05-18 |
US9564492B2 (en) | 2017-02-07 |
US9437685B2 (en) | 2016-09-06 |
US20140339686A1 (en) | 2014-11-20 |
US20150380497A1 (en) | 2015-12-31 |
US20180097072A1 (en) | 2018-04-05 |
US10084047B2 (en) | 2018-09-25 |
US8796738B2 (en) | 2014-08-05 |
JP5722852B2 (ja) | 2015-05-27 |
US9831312B2 (en) | 2017-11-28 |
US9129890B2 (en) | 2015-09-08 |
US20130069208A1 (en) | 2013-03-21 |
US20140339605A1 (en) | 2014-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5722852B2 (ja) | 不純物濃度を選択的に減少させたiii−v族デバイス構造 | |
TWI464876B (zh) | 用於以氮為主之電晶體的帽蓋層和或鈍化層,電晶體結構與其製造方法 | |
EP3311414B1 (en) | Doped barrier layers in epitaxial group iii nitrides | |
US9385225B2 (en) | Method of making a circuit structure having islands between source and drain | |
US7479669B2 (en) | Current aperture transistors and methods of fabricating same | |
US7709859B2 (en) | Cap layers including aluminum nitride for nitride-based transistors | |
EP2394299B1 (en) | Semiconductor structure and a method for manufacturing a semiconductor structure | |
US9401403B2 (en) | Nitride semiconductor structure | |
EP3226304A1 (en) | Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor | |
CN109564855B (zh) | 使用离子注入的高电阻率氮化物缓冲层的半导体材料生长 | |
CN111406306A (zh) | 半导体装置的制造方法、半导体装置 | |
KR20150091706A (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
KR20150091705A (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
KR102077674B1 (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
KR20150000753A (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
US20160211358A1 (en) | Semiconductor device | |
KR102067597B1 (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
CN113224154B (zh) | 高电子迁移率晶体管及其制作方法 | |
KR20150091704A (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
KR102080744B1 (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
CN117525112A (zh) | 高电子迁移率晶体管及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140304 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140530 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140604 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140620 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140625 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140804 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140807 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140901 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150324 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150326 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5722852 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |