JP2010016404A - ステッチング誤差防止用改良型パターン・ジェネレータ - Google Patents
ステッチング誤差防止用改良型パターン・ジェネレータ Download PDFInfo
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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- B41J2/465—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using masks, e.g. light-switching masks
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- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
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- G02B27/4205—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant
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Abstract
【解決手段】本発明に係る装置は、つぎ合わされた少なくとも2つの隣接する部分的画像が共通の境界でオーバラップし、オーバラップしている部分的画像の各々が、オーバラップ領域において本質的に同じパターン、及び減少された露光線量を有し、オーバラップ領域の減少された露光線量が、オン状態とオフ状態との間の中間変調状態に設定する位相変調素子の能力を使って、位相変調アナログ空間光変調装置のアナログ機能により作られ、中間変調状態に設定された位相変調素子の微小領域素子から反射された光の複素振幅を一体化した光の複素振幅が、オーバラップ領域の減少された露光線量をつくることを特徴とする。
【選択図】図6
Description
最新の技術では、マイクロミラー型のマイクロミラー空間光変調装置(SLM)の投射を用いた高精度パターン・ジェネレータの構成が周知である(ネルソン 1988年(特許文献1)、クック 1990年(特許文献2))。パターン・ジェネレータにおけるSLMの使用は、走査レーザ・スポットを使用する、より広く知られた方法に比べて多くの利点がある。SLMは、大規模並列処理装置であり、1秒当たりに書き込める画素数は極めて多い。この光学系は、SLMの照射が非限界的であるという点でより簡素化されているのに対し、レーザ・スキャナでは、ビーム路全体を高精度で構築しなければならない。数種類のスキャナ(特に電気光学および音響光学スキャナ)と比較して、マイクロミラーSLMが完全に反射装置であることから、マイクロミラーSLMをより短い波長で使用することができる。
この目的は、添付クレームに示された装置によって実現される。
超紫外線(EUV)から赤外線(IR)までの波長範囲にあるエネルギー量を有する光パルスの源と、
前記放射パルスによって照射される複数の変調素子を有する空間光変調装置と、
加工品に該変調装置の放射パルス画像を作成する投射系と、
書き込まれたパターンのデジタル表現を受信し、連続する部分的パターンをデジタル・パターン表現から抽出し、前記部分的パターンを変調装置電圧に変換し、さらに、前記電圧を該変調装置に供給する電子データ伝送システムと、
前記投射系に対して前記加工品を移動する高精度機械システムと、
該加工品の動作と、該変調装置への電圧の供給と、放射パルスを調整し、大型のパターンを前記連続した放射パルスによって作成された複数の部分的画像からつぎ合わせて作成する電子制御システムとから成り、
つぎ合わされた少なくとも2つの隣接する画像が共通の境界でオーバラップし、該オーバラップ画像が、該オーバラップ領域において本質的に同じパターンとより低い輝度を有することを特徴としている。
従来技術で使用されているようなクローバー型ミラーは、オン状態とオフ状態の間の中間状態にすることが可能である。しかし、積分複素振幅が偏向関数として作図された場合、完全に0になることは決してなく、0の周りに複数の円を描くことから、位相角が変化する非ゼロの最低反射率を有することが理解される。中間状態に設定された数個の画素を有する画像を綿密に分析すると、エッジ画素の積分位相角がゼロでない場合、最終的な画像のエッジ位置が、焦点に到るまで安定していないことが明らかである。本発明の好適な実施例では、旋回素子を有する新型の画素を使用している。各素子が旋回すると、片方の端部が光源方向に移動し、もう片方の端部が別の方向を向くことから、ゼロに近い平均的位相が維持される。さらに、このクローバー型設計には、製造中に残留内部応力が発生するという問題がある。この応力は、印加された電場を利用しなくても、部分的な変形を発生させる傾向がある。この内部変形は、製造中の不完全性によることから、すべての画素で全く同様に発生するとは限らない。クローバー型設計では、この画素ごとの相違によって、反射率の一次的偏差が生じる。旋回素子により形成された画素セルによっても同様の結果が得られるが、さらに、二次的な効果が発生する。したがって、投射において均一性が向上する。
旋回設計には第3の利点がある。クローバー型は、完全な吸光には至らないが、旋回型セルは、より簡単に、完全な吸光を実現する幾何学的形状寸法が得られ、あるいは、ゼロを通過して、非ゼロのわずかな反射に戻ることもあり、その場合は逆相になる。吸光が良好に行なわれることによって、重なり合った露光を印刷する自由度が大きくなり、低い負の値を設計することにより、吸光に近いさらに良好な線形性が実現する。暗い領域において約5%の弱い露光で逆相にした印刷では、15〜30%の高いエッジ鮮鋭度が得られ、一定のレンズを使用して、より小型のフィーチャーを印刷することができる。これは、半導体業界で利用されている、いわゆる、減衰移相マスク(attenuating phase−shifting mask)によく似ている。エッジ鮮鋭度を高める関連方法として、フィーチャー内部の画素に低い値を設定し、エッジ付近の画素に高い値を設定する方法がある。これにより、現在のマスクからのパターン投射や、ネルソンおよびクックによる投射機の使用では不可能な新型の画像高画質化が実現する。背景に非ゼロの負の振幅を使用しエッジに沿って露光を強くすることは、エッジ画素を中間値にして微細なアドレス・グリッドを生成することと矛盾しない。これは、それぞれの効果が付加的、あるいは、少なくとも計算可能なことによるものである。また、画素が印刷されるフィーチャーよりも実質的に小さい場合、すべての効果が同時に得られるような画素値の組み合わせがある。これらの画素を検出するためには、微細なアドレス・グリッドを作成するだけでなく、さらに、コンピュータi9.計算が必要になるが、本発明の一部の利用法においては、より小さいフィーチャーの印刷ができれば、多大な努力に見合うだけの高い値が得られる。
第1の好適な実施例は、2048×512マイクロミラーから成るSLMを使用したフォトマスクの深紫外線パターン・ジェネレータである。光源は、248ナノメートルのパルス出力と、約10nsのパルス長と、500Hzの反復度を有するKrFエキシマ・レーザである。SLMは、90%を上回る光を反射するアルミニウム面を有している。SLMは、ビーム・スクランブリング・イルミネータ(beam−scrambling illuminator)を通じてレーザにより照射され、反射光は、投射レンズ方向に向けられるとともに、さらに、感光面に向けられる。イルミネータからの入射ビームとレンズへの出射ビームは、半透明のビーム・スプリッタ・ミラー(beamsplitter mirror)によって分離される。好ましくは、このミラーは偏光選択型であり、イルミネータは偏光を使用し、その偏光方向は、SLMの正面にある1/4波長板によって切り換えられる。高い開口数(NA)でx軸およびy軸に対して対称性を有するためには、画像は、対称的に偏光されなければならず、ビーム・スプリッタと投射レンズの間にある第2の1/4波長板によって、円形に偏光された画像が生成される。レーザ・パルスのエネルギーによって可能な場合のさらに簡単な構成は、非偏光ビーム・スプリッタを使用することである。ビーム・スプリッタの第2の通過後も、1/4波長板は、なお利点を有しているが、それは、該プレートによって、ビーム・スプリット・コーティング(beam−splitting coating)の設計が影響を受けにくくなるためである。全体の最も簡単な構成は、SLMにおける斜めの入射を利用して、イルミネータからのビームと投射レンズに達するビームが、図1に示されるように、幾何学的に離れるようにしたものである。
第2の好適な実施例において、レーザは、193nmの波長と500Hzパルスの周波数を有するArFエキシマ・レーザである。SLMは、20*20μmの3072×1024画素を有しており、レンズは、0.06μmの投射画素が得られる333Xの縮小変倍率を有している。また、60個の中間値があり、アドレス・グリッドは、1ナノメートルである。ポイント・スプレッド関数は、0.13μmであり、最小ラインは0.2μmである。データ・フローは、1572メガバイト/秒であり、230mm長さの1列のデータは、11.8Gbである。
エキシマ・レーザには2つの不利な特性、つまり、フラッシュ対フラッシュの5%のエネルギー変化量と、フラッシュ対フラッシュの100nsの時間的変動がある。好適な実施例では、いずれも同じ方法によって補償されている。最初の露光は、90%の倍率での全体のパターンにより形成されている。各フラッシュについての実際のフラッシュのエネルギーと時間の状態が記録される。第2の露光は、公称10%の露光によって形成され、アナログ変調により、第1露光の実際の値しだいでは、第2の露光を5〜15%にする。同様に、第2の露光において意図的に時間を相殺することにより、第1の露光の時間的変動を補正できる。第2の露光は、第1の露光で生じた誤差を完全に補償できるが、それ自体が同じ種類の新たな誤差を発生する。露光全体の平均がわずか10%であることから、両者の誤差は、10だけ事実上減少する。実際に、レーザは、100nsよりもはるかに大きい時間的な不確定性を有している。この不確定性は、光のパルスが、トリガ・パルスからの遅延にしたがって発生し、この遅延が、時折、数マイクロ秒分、変化することによるものである。短時間の間に、遅延はより安定することから、継続的に遅延を測定し、適当にフィルタリングした最終遅延値を使用して、次のパルス遅延を予測するとともに、トリガ・パルスの位置付けを行なう。
エキシマ・レーザは、レーザの波長と種類に依存した500〜1000Hzの限定的なパルス繰返し周波数(prf)を有している。そのため、x軸およびy軸の両方において、エッジをステッチングした大型のフィールドを与える。他の2つの好適な実施例では、SLMがprfがはるかに高いパルス・レーザ、例えば、Qスイッチ・アップコンバート固体レーザや、SLMの表面上で走査された連続レーザ源から照射されることにより、SLMのある部分が新規データで書き換えられる一方で、別の部分が印刷される。どちらの場合も、レーザのコヒーレンス特性がエキシマ・レーザとは異なっており、例えば、異なる光路長を有する複数の平行な光路などの、より大規模なビーム・スクランブリングおよびコヒーレンス制御が必要である。本発明の一部の実施例では、フラッシュ・ランプからの光の出力が充分であり、光源として使用可能である。その利点として、低コストであり、コヒーレンス特性が優れていることである。
EUVの光源は、粒子加速装置、磁気プラズマ・ピンチ・マシンからの放射、または、高電力レーザ・パルスによる物質の小滴を極端な温度に加熱することによるものである。いずれの場合も、放射はパルス振動している。EUV放射は、真空のみで伝搬し、反射光学器械でしか焦点を合わせることができない。SLMを使用する代表的なパターン・ジェネレータは、光パワーのさほど高くない要件である、小さい露光フィールドを有している。したがって、光学系の設計は、EUVステッパに比べて緩やかであることから、より多くのミラーを使用でき、ステッパよりも高い開口数(NA)を実現できる。開口数(NA)が高いレンズは、リング形露光フィールドを有することが予想され、SLMの形状をそのようなフィールドに合わせることが充分に可能である。13nmの波長と0.25の開口数(NA)では、わずか25nm幅のラインを露光することが可能であり、さらに、下記の通り、画像の高画質化を利用すれば、20nmを下回ることも可能である。このような解像度と、同時に、SLMの同様の特徴によって可能な書込み速度を実現できる周知の書込み技術も他にはない。
各フラッシュごとに、2次元フィールドが印刷されるとともに、各フィールドのエッジとエッジをつぎ合わせることから、ステッチングは極めて重要である。わずか数ナノメートルの1フィールドを置き換えることにより、エッジに沿って目に見えるパターン誤差が発生し、マスクによって生成される電子回路の機能に悪影響を及ぼす可能性がある。このような不必要なステッチングの影響を減少させる効果的な方法として、数本の経路に同じパターンを印刷し、このような経路間にあるステッチング境界を置き換える方法があげられる。パターンが4回印刷された場合、ステッチング誤差が4箇所で発生することが予想されるが、その規模にして僅か四分の一にすぎない。本発明の好適な実施例では、フィールド間のオーバラップ・バンドとともに、中間露光を発生する機能が使用される。ラスタライズ化している間、上記の値がコンピュータで計算されるが、圧縮データを解凍している間でもこの計算は実行できる。エッジ・オーバラップにより、ステッチング誤差が減少し、マルチパス印刷に比べてスループットの不利益がはるかに減少する。
第1の好適な実施例において、SLMの照射は、エキシマ・レーザや、フライアイ・レンズなどの光スクランブラーによって行なわれ、イルミネータのひとみ面の円形自発光面からの照射とよく似た照射が生成される。ある特定の投射系による印刷時に解像度を高める場合、修正照射法を利用することができる。最も簡単な例では、イルミネータのひとみ面に、例えば、四重極形または環状の透過領域を有するひとみフィルタを導入する方法がある。さらに複雑な例では、同じフィールドを数回印刷する。露光と露光の間で数個のパラメータ、例えば、画像面の焦点、照射パターン、SLMに印加されるデータ、投射レンズのひとみ面のひとみフィルタなどを変化させることが可能である。特に、照射の同期した変化やひとみフィルタによって、解像度を高めることができ、このことは、ひとみが扇形透過領域を有しているとともに、非回折光が該扇形の先端付近の吸収絞りをさえぎるように照射が一直線に並んでいる場合に、特に顕著である。
データからエッジ配置までの伝達関数の線形化を図るうえで、本明細書で行なう基本的に次の3つの方法がある。
−データ変換装置において非線形性を考慮し、データ変換装置に8ビット(例)の画素値を生成し、同じ解像度を有するDACを使用してSLMを駆動する。
−より少ない値(例えば、5ビット、すなわち、最高32個の値)でデジタル値を生成し、ルックアップ・テーブル(LUT)で8ビット値に変換した後に、この8ビット値をDACに供給する。
−5ビット値と半導体スイッチを使用して、1台または数台の高解像度DACにより生成されたDC電圧を選択する。
図6を参照すると、パターン・ジェネレータは、単数および複数の値を持つ画素アドレス指定方式によるSLM601と、光源602と、照射ビーム・スクランブル装置603と、結像光学系604と、干渉計位置制御系606を備えた微細位置付け基板ステージ605と、SLM用ハードウェアおよびソフトウェア・データ処理システム607とから構成されている。また、さらに、適正な機能を提供し操作を簡易化するために、前記パターン・ジェネレータは、温度制御を備えた周囲環境チャンバ、基板荷重システム、最適なパターン配置精度を実現するためのステージ移動および露光レーザ・トリガーのタイミングをとるためのソフトウェア、およびソフトウェア・ユーザ・インタフェースも具備している。
Claims (6)
- 位置付けステージ上の加工品にパターンを作成する装置であって、該装置が、
超紫外線から赤外線までの波長範囲にあるエネルギー量を有する電磁波を放射する源と、
前記電磁波によって照射される多数の位相変調素子を有する位相変調アナログ空間光変調装置と、
前記加工品に前記位相変調アナログ空間光変調装置の画像を作成する投射系であって、ひとみを有する投射レンズを含む投射系と、
書き込まれるべきパターンのデジタル表現を受け取り、デジタル・パターン表現から連続する部分的パターンを抽出し、前記部分的パターンを変調装置信号に変換し、前記変調装置信号を前記アナログ空間光変調装置に供給する電子データ伝送系と、
前記加工品及び/又は前記投射系を相互に移動させる高精度機械系と、
前記加工品の動作、及び前記アナログ空間光変調装置への信号の供給を調整し、前記連続した部分的パターンにより作成された部分的画像をつぎ合わせてパターンにする電子制御系と
を有し、
前記位相変調素子がオン状態のとき、前記位相変調素子の微小領域素子から反射された光の複素振幅を一体化した光の複素振幅は、前記位相変調素子の微小領域素子から反射された光の複素振幅を加えることにより、前記投射レンズのひとみの中心に到達する光が最大になり、
前記位相変調素子がオフ状態のとき、前記位相変調素子の微小領域素子から反射された光の複素振幅を一体化した光の複素振幅は、弱め合う干渉により、前記投射レンズのひとみの中心に到達する光が最小になり、
つぎ合わされた少なくとも2つの隣接する部分的画像が共通の境界でオーバラップし、前記オーバラップしている部分的画像の各々が、オーバラップ領域において本質的に同じパターン、及び減少された露光線量を有し、
前記オーバラップ領域の減少された露光線量が、前記オン状態とオフ状態との間の中間変調状態に設定する前記位相変調素子の能力を使って、前記位相変調アナログ空間光変調装置のアナログ機能により作られ、
中間変調状態に設定された前記位相変調素子の微小領域素子から反射された光の複素振幅を一体化した光の複素振幅が、前記オーバラップ領域の減少された露光線量をつくることを特徴とする装置。 - 前記オーバラップ領域の境界が、エッジと極めて重要なフィーチャーを避けて配置されることを特徴とする請求項1に記載の装置。
- 前記位相変調アナログ空間光変調装置が、前記加工品上の前記パターンにおいてオーバラップする領域で低い静的光効率を有し、それにより前記領域に減少された露光が生成されることを特徴とする請求項1に記載の装置。
- 前記作られた減少された露光が、前記位相変調アナログ空間光変調装置に供給される前記データにより制御され、前記入力表現から前記位相変調アナログ空間光変調装置に適した画素データへの変換中に、前記減少された露光のデータが、前記パターン・データに追加されることを特徴とする請求項1に記載の装置。
- 前記作られた減少された露光が、前記位相変調アナログ空間光変調装置に供給される前記データによって制御され、前記減少された露光のデータが、特殊ハードウェア装置によって、前記パターン・データに追加されることを特徴とする請求項1に記載の装置。
- 加工品にパターンを作成する方法であって、該方法は、
書き込まれるべきパターンのデジタル表現を受け取る段階と、
連続する部分的パターンをデジタル・パターン表現から抽出する段階と、
前記パターンを変調装置信号に変換する段階と、
前記変調装置信号を位相変調アナログ空間光変調装置に供給する段階と、
超紫外線から赤外線までの波長の光を放射する段階と、
多数の位相変調素子を有する前記位相変調アナログ空間光変調装置によって、前記放射された光を変調する段階と、
前記連続した部分的パターンにより作成された部分的画像をつぎ合わせてパターンにするように、前記加工品の動作及び前記位相変調アナログ空間光変調装置への信号の供給を調整することにより、前記加工品に画像を投影する段階と
を含み、
前記位相変調素子がオン状態のとき、前記位相変調素子の微小領域素子から反射された光の複素振幅を一体化した光の複素振幅は、前記位相変調素子の微小領域素子から反射された光の複素振幅を加えることにより、投射系の投射レンズのひとみの中心に到達する光が最大になり、
前記位相変調素子がオフ状態のとき、前記位相変調素子の微小領域素子から反射された光の複素振幅を一体化した光の複素振幅は、弱め合う干渉により、前記投射系の前記投射レンズのひとみの中心に到達する光が最小になり、
つぎ合わされた少なくとも2つの隣接する部分的画像が共通の境界でオーバラップし、前記オーバラップしている部分的画像の各々が、オーバラップ領域において本質的に同じパターンと、減少された露光線量を有し、
前記減少された露光線量が、前記位相変調素子を前記オン状態とオフ状態との間の中間変調状態に設定することによって、前記位相変調アナログ空間光変調装置のアナログ機能により作られ、
中間変調状態に設定された前記位相変調素子の微小領域素子から反射された光の複素振幅を一体化した光の複素振幅により、前記オーバラップ領域の減少された露光線量をつくることを特徴とする、加工品にパターンを作成する方法。
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JP2000534915A Pending JP2002506230A (ja) | 1998-03-02 | 1999-03-02 | 精度改良型パターン・ジェネレータ |
JP2000534921A Pending JP2002506236A (ja) | 1998-03-02 | 1999-03-02 | 変調装置の設計を改良したパターン・ジェネレータ |
JP2000534920A Pending JP2002506235A (ja) | 1998-03-02 | 1999-03-02 | アドレス・レゾリューションが改善されたパターン・ジェネレータ |
JP2000534918A Pending JP2002506233A (ja) | 1998-03-02 | 1999-03-02 | 高画質パターン作成方法 |
JP2000534916A Pending JP2002506231A (ja) | 1998-03-02 | 1999-03-02 | ステッチング誤差防止用改良型パターン・ジェネレータ |
JP2000534917A Pending JP2002506232A (ja) | 1998-03-02 | 1999-03-02 | Euvを使用するパターン・ジェネレータ |
JP2005269967A Pending JP2006080539A (ja) | 1998-03-02 | 2005-09-16 | 改良型パターン・ジェネレータ |
JP2008237405A Pending JP2009033190A (ja) | 1998-03-02 | 2008-09-17 | ステッチング誤差防止用改良型パターン・ジェネレータ |
JP2009235543A Pending JP2010016404A (ja) | 1998-03-02 | 2009-10-09 | ステッチング誤差防止用改良型パターン・ジェネレータ |
JP2009235389A Pending JP2010015176A (ja) | 1998-03-02 | 2009-10-09 | アドレス・レゾリューションが改善されたパターン・ジェネレータ |
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JP2000534919A Withdrawn JP2002506234A (ja) | 1998-03-02 | 1999-03-02 | 改良型パターン・ジェネレータ |
JP2000534915A Pending JP2002506230A (ja) | 1998-03-02 | 1999-03-02 | 精度改良型パターン・ジェネレータ |
JP2000534921A Pending JP2002506236A (ja) | 1998-03-02 | 1999-03-02 | 変調装置の設計を改良したパターン・ジェネレータ |
JP2000534920A Pending JP2002506235A (ja) | 1998-03-02 | 1999-03-02 | アドレス・レゾリューションが改善されたパターン・ジェネレータ |
JP2000534918A Pending JP2002506233A (ja) | 1998-03-02 | 1999-03-02 | 高画質パターン作成方法 |
JP2000534916A Pending JP2002506231A (ja) | 1998-03-02 | 1999-03-02 | ステッチング誤差防止用改良型パターン・ジェネレータ |
JP2000534917A Pending JP2002506232A (ja) | 1998-03-02 | 1999-03-02 | Euvを使用するパターン・ジェネレータ |
JP2005269967A Pending JP2006080539A (ja) | 1998-03-02 | 2005-09-16 | 改良型パターン・ジェネレータ |
JP2008237405A Pending JP2009033190A (ja) | 1998-03-02 | 2008-09-17 | ステッチング誤差防止用改良型パターン・ジェネレータ |
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JP2010137427A Pending JP2010267978A (ja) | 1998-03-02 | 2010-06-16 | 改良型パターン・ジェネレータ |
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EP (6) | EP1600817B1 (ja) |
JP (12) | JP2002506234A (ja) |
KR (2) | KR100474121B1 (ja) |
CN (3) | CN1173234C (ja) |
AT (5) | ATE491970T1 (ja) |
AU (7) | AU2757099A (ja) |
DE (6) | DE69936950T2 (ja) |
ES (1) | ES2357473T3 (ja) |
RU (2) | RU2232411C2 (ja) |
SE (1) | SE9800665D0 (ja) |
WO (7) | WO1999045436A1 (ja) |
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