JP2006073651A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2006073651A JP2006073651A JP2004253112A JP2004253112A JP2006073651A JP 2006073651 A JP2006073651 A JP 2006073651A JP 2004253112 A JP2004253112 A JP 2004253112A JP 2004253112 A JP2004253112 A JP 2004253112A JP 2006073651 A JP2006073651 A JP 2006073651A
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- semiconductor device
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- semiconductor
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Abstract
【解決手段】 半導体素子1と、この半導体素子1と電気的に接続される回路基板4と、この回路基板4の一面に固定されると共に半導体素子1と熱的に接続される放熱部材6と、回路基板4の放熱板6の配設面と反対側の面に配設されると共に回路基板4と電気的に接続されるインターポーザ5Aとを有した半導体装置であって、前記回路基板4及びインターポーザ5Aに開口部25,26を形成し、この開口部25,26を介して半導体素子1を放熱板6に直接熱的に接合した構成とする。
【選択図】 図1
Description
半導体素子と、
該半導体素子と電気的に接続される回路基板と、
該回路基板の一面に固定されると共に、前記半導体素子と熱的に接続される放熱部材と、
前記回路基板の前記放熱部材の配設面と反対側の面に配設されると共に、該回路基板と電気的に接続されるインターポーザとを有した半導体装置であって、
前記回路基板及び前記インターポーザに開口部を形成し、該開口部を介して前記半導体素子を前記放熱部材に直接熱的に接合した構成としたことを特徴とするものである。
請求項1記載の半導体装置において、
前記放熱部材は、平板である事を特徴とするものである。
請求項1または2記載の半導体装置において、
前記放熱部材は、炭素を主成分として含有する炭素含有物質であることを特徴とするものである。
請求項1乃至3のいずれか1項に記載の半導体装置において、
前記放熱部材を導電性材料により形成し、かつ前記回路基板と電気的に接続したことを特徴とするものである。
請求項1乃至4のいずれか1項に記載の半導体装置において、
前記開口部内に前記半導体素子を複数個配設したことを特徴とするものである。
請求項1乃至5のいずれか1項に記載の半導体装置において、
前記インターポーザの基材は、回路基板の基材と同じ材質である事を特徴とするものである。
請求項1乃至6のいずれか1項に記載の半導体装置において、
前記インターポーザは、受動素子が内設された構成であることを特徴とするものである。
請求項1乃至7のいずれか1項に記載の半導体装置において、
前記インターポーザに設けられた外部接続端子の配設位置と、前記回路基板に接続するための端子の配設位置とが、前記インターポーザを平面視した場合に重なっていることを特徴とするものである。
請求項1乃至7のいずれか1項に記載の半導体装置において、
前記インターポーザに設けられた外部接続端子の配設位置と前記回路基板に接続するための端子の配設位置とが、前記インターポーザを平面視した場合に異なっていることを特徴とするものである。
請求項1乃至9のいずれか1項に記載の半導体装置において、
前記開口部を複数形成すると共に、各開口部内に前記半導体素子を配置したことを特徴とするものである。
(付記1)
半導体素子と、
該半導体素子と電気的に接続される回路基板と、
該回路基板の一面に固定されると共に、前記半導体素子と熱的に接続される放熱部材と、
前記回路基板の前記放熱部材の配設面と反対側の面に配設されると共に、該回路基板と電気的に接続されるインターポーザとを有した半導体装置であって、
前記回路基板及び前記インターポーザに開口部を形成し、該開口部を介して前記半導体素子を前記放熱部材に直接熱的に接合した構成としたことを特徴とする半導体装置。
(付記2)
付記1記載の半導体装置において、
前記放熱部材は、平板である事を特徴とする半導体装置。
(付記3)
付記1または2記載の半導体装置において、
前記放熱部材は、少なくとも前記半導体素子が接合される面が平坦面とされていることを特徴とする半導体装置。
(付記4)
付記1乃至3のいずれか1項に記載の半導体装置において、
前記放熱部材の熱伝導率が、10W/m/K以上3000W/m/K以下の材質よりなることを特徴とする半導体装置。
(付記5)
付記4記載の半導体装置において、
前記放熱部材は、銅、ニッケル、及びアルミニウムから選定される一の金属であることを特徴とする半導体装置。
(付記6)
付記4記載の半導体装置において、
前記放熱部材は、セラミックスであることを特徴とする半導体装置。
(付記7)
付記4記載の半導体装置において、
前記放熱部材は、炭素を主成分として含有する炭素含有物質であることを特徴とする半導体装置。
(付記8)
付記7記載の半導体装置において、
前記炭素含有物質は、ダイヤモンド或はカーボンナノチューブであることを特徴とする半導体装置。
(付記9)
付記1乃至8のいずれか1項に記載の半導体装置において、
前記回路基板は、多層回路基板であることを特徴とする半導体装置。
(付記10)
付記1乃至9のいずれか1項に記載の半導体装置において、
前記放熱部材を導電性材料により形成し、かつ前記回路基板と電気的に接続したことを特徴とする半導体装置。
(付記11)
付記1乃至10のいずれか1項に記載の半導体装置において、
前記半導体素子と前記回路基板とをワイヤーにより接続したことを特徴とする半導体装置。
(付記12)
付記1乃至10のいずれか1項に記載の半導体装置において、
前記半導体素子と前記回路基板とをTABにより接続したことを特徴とする半導体装置。
(付記13)
付記1乃至10のいずれか1項に記載の半導体装置において、
前記半導体素子と前記電気回路基板とをフリップチップ接続したことを特徴とする半導体装置。
(付記14)
付記1乃至13のいずれか1項に記載の半導体装置において、
前記開口部内に前記半導体素子を複数個配設したことを特徴とする半導体装置。
(付記15)
付記14記載の半導体装置において、
前記開口部内で前記半導体素子を積層した構成としたことを特徴とする半導体装置。
(付記16)
付記1乃至15のいずれか1項に記載の半導体装置において、
前記インターポーザの基材は、回路基板の基材と同じ材質である事を特徴とする半導体装置。
(付記17)
付記1乃至15のいずれか1項に記載の半導体装置において、
前記インターポーザの基材の熱膨張率と、前記回路基板の基材の熱膨張率が略等しくなるよう設定したことを特徴とする半導体装置。
(付記18)
付記1乃至17のいずれか1項に記載の半導体装置において、
前記インターポーザの基材がセラミックであることを特徴とする半導体装置。
(付記19)
付記18記載の半導体装置において、
前記セラミックは、低温焼結セラミックである事を特徴とする半導体装置。
(付記20)
付記1乃至19のいずれか1項に記載の半導体装置において、
前記インターポーザは、受動素子が内設された構成であることを特徴とする半導体装置。
(付記21)
付記1乃至20のいずれか1項に記載の半導体装置において、
前記インターポーザに設けられた外部接続端子数と、前記回路基板の前記インターポーザと接続するための端子数とが同数であることを特徴とする半導体装置。
(付記22)
付記1乃至20のいずれか1項に記載の半導体装置において、
前記インターポーザに設けられた外部接続端子数と、前記回路基板の前記インターポーザと接続するための端子数とを異ならせたことを特徴とする半導体装置。
(付記23)
請求項1乃至7のいずれか1項に記載の半導体装置において、
前記インターポーザに設けられた外部接続端子の配設位置と、前記回路基板に接続するための端子の配設位置とが、前記インターポーザを平面視した場合に重なっていることを特徴とする半導体装置。
(付記24)
付記1乃至21のいずれか1項に記載の半導体装置において、
前記インターポーザに設けられた外部接続端子の配設位置と、前記回路基板に設けられた前記インターポーザと接続するための端子の配設位置とが、前記インターポーザを平面視した場合に異なっていることを特徴とする半導体装置。
(付記25)
付記1乃至24のいずれか1項に記載の半導体装置において、
前記開口部を複数形成すると共に、各開口部内に前記半導体素子を配置したことを特徴とする半導体装置。
(付記26)
付記1乃至25のいずれか1項に記載の半導体装置において、
前記開口部は、パンチング加工またはルータ加工により形成されてなることを特徴とする半導体装置。
(付記27)
付記1乃至26のいずれか1項に記載の半導体装置において、
前記回路基板と前記インターポーザを、はんだを用いて電気的に接続したことを特徴とする半導体装置。
(付記28)
付記1乃至26のいずれか1項に記載の半導体装置において、
前記回路基板と前記インターポーザを、異方性導電性物質を用いて電気的に接続したことを特徴とする半導体装置。
(付記29)
付記1乃至26のいずれか1項に記載の半導体装置において、
前記回路基板と前記インターポーザを、金属拡散を利用して電気的に接続したことを特徴とする半導体装置。
(付記30)
付記1乃至29のいずれか1項に記載の半導体装置において、
前記外部接続端子をボールにより構成したことを特徴とする半導体装置。
(付記31)
付記1乃至30のいずれか1項に記載の半導体装置において、
前記インターポーザの外径を、前記回路基板の外形と等しくしたことを特徴とする半導体装置。
(付記32)
付記1乃至30のいずれか1項に記載の半導体装置において、
前記インターポーザの外径を、前記回路基板の外形より大きくしたことを特徴とする半導体装置。
(付記33)
付記1乃至30のいずれか1項に記載の半導体装置において、
前記インターポーザの外径を、前記回路基板の外形より小さくしたことを特徴とする半導体装置。
4 回路基板
5A〜5G インターポーザ
6 放熱板
7 封止樹脂
8 外部接続端子
12 ワイヤー
14,18 基材
15,35 内層配線
16,36 ビア
19,19A,19B スルーホール
25,25A,25B,26 開口部
28 バンプ
30 電気回路基板
31 TABテープ
32 放熱板接続用ワイヤー
34 デカップリングコンデンサ
35 内層配線
40 異方性導電性部材
41 拡散接合部
Claims (10)
- 半導体素子と、
該半導体素子と電気的に接続される回路基板と、
該回路基板の一面に固定されると共に、前記半導体素子と熱的に接続される放熱部材と、
前記回路基板の前記放熱部材の配設面と反対側の面に配設されると共に、該回路基板と電気的に接続されるインターポーザとを有した半導体装置であって、
前記回路基板及び前記インターポーザに開口部を形成し、該開口部を介して前記半導体素子を前記放熱部材に直接熱的に接合した構成としたことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記放熱部材は、平板である事を特徴とする半導体装置。 - 請求項1または2記載の半導体装置において、
前記放熱部材は、炭素を主成分として含有する炭素含有物質であることを特徴とする半導体装置。 - 請求項1乃至3のいずれか1項に記載の半導体装置において、
前記放熱部材を導電性材料により形成し、かつ前記回路基板と電気的に接続したことを特徴とする半導体装置。 - 請求項1乃至4のいずれか1項に記載の半導体装置において、
前記開口部内に前記半導体素子を複数個配設したことを特徴とする半導体装置。 - 請求項1乃至5のいずれか1項に記載の半導体装置において、
前記インターポーザの基材は、回路基板の基材と同じ材質である事を特徴とする半導体装置。 - 請求項1乃至6のいずれか1項に記載の半導体装置において、
前記インターポーザは、受動素子が内設された構成であることを特徴とする半導体装置。 - 請求項1乃至7のいずれか1項に記載の半導体装置において、
前記インターポーザに設けられた外部接続端子の配設位置と、前記回路基板に接続するための端子の配設位置とが、前記インターポーザを平面視した場合に重なっていることを特徴とする半導体装置。 - 請求項1乃至7のいずれか1項に記載の半導体装置において、
前記インターポーザに設けられた外部接続端子の配設位置と前記回路基板に接続するための端子の配設位置とが、前記インターポーザを平面視した場合に異なっていることを特徴とする半導体装置。 - 請求項1乃至9のいずれか1項に記載の半導体装置において、
前記開口部を複数形成すると共に、各開口部内に前記半導体素子を配置したことを特徴とする半導体装置。
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