JP2006066657A - Light emitting device and lighting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device having high radiation intensity and high luminance while being excellent in light emitting efficiency. <P>SOLUTION: The light emitting device is provided with a substrate 1 with the mounting unit 1a of a light emitting element 3 formed on the upper side main surface thereof, a frame type first reflective member 2 mounted on the upper side main surface of the substrate 1 so as to surround the mounting unit 1a and whose inner peripheral surface 2a is used as a light reflective surface, a frame type second reflective member 4 mounted on the upper side main surface of the substrate 1 so as to surround the first reflective member 2 and whose inner peripheral surface 4a is used as a light reflective surface, a light emitting element 3 mounted on the mounting unit 1a, a translucent member 6 provided at the inside of the second reflective member 4 so as to cover the light emitting element 3 and the first reflective member 2, a light reflective layer 5 provided in or on the surface of the translucent member 6 positioned above the light emitting element 3 with a distance between the first reflective member 2 as well as the second reflective member 4 to reflect light emitted by the light emitting element 3, and a wavelength transformation layer 8 attached to the inner peripheral surface of the second reflective member 4 to transform the wavelength of light emitted by the light emitting element 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a light emitting device in which a light emitting element is accommodated and an illumination device using the same.

  A conventional light emitting device is shown in FIG. In FIG. 15, the light emitting device has a mounting portion 11a for mounting the light emitting element 13 at the center of the upper surface, and leads that electrically connect the inside and outside of the light emitting device from the mounting portion 11a and its periphery. A base 11 made of an insulator on which a wiring conductor (not shown) made of terminals, metallized wiring, etc. is formed, and adhesively fixed to the upper surface of the base 11 so that the inner peripheral surface 12a spreads outward as it goes upward. And a frame-like reflecting member 12 whose inner peripheral surface 12a is a reflecting surface for reflecting light emitted from the light emitting element 13, and light transmitted by the light emitting element 13 on the translucent member. It mainly comprises a wavelength conversion layer 15 containing a phosphor to be converted (not shown) and a translucent member 16 filled inside the reflecting member 12 to protect the light emitting element 13.

  The substrate 11 is made of an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, ceramics such as glass ceramics, or a resin such as epoxy resin. When the substrate 11 is made of ceramic, the wiring conductor is formed on its upper surface by firing a metal paste made of tungsten (W), molybdenum (Mo) -manganese (Mn), etc. at a high temperature. When the base 11 is made of a resin, lead terminals made of copper (Cu), iron (Fe) -nickel (Ni) alloy, etc. are molded and fixed inside the base 11.

  The reflecting member 12 is made of metal such as aluminum (Al) or Fe-Ni-cobalt (Co) alloy, ceramics such as alumina ceramics or resin such as epoxy resin, and is used for cutting, die molding, extrusion molding, etc. Formed by molding technique.

  Further, the reflecting member 12 has an inner peripheral surface 12a as a reflecting surface that reflects light from the light emitting element 13 and the wavelength conversion layer 15, and the inner peripheral surface 12a is made of a metal such as Al by vapor deposition or plating. It is formed by adhering. The reflecting member 12 is joined to the upper surface of the base 11 by a soldering material such as solder, silver (Ag) solder, or a joining material such as a resin adhesive so as to surround the mounting portion 11a with the inner peripheral surface 12a.

  The light-emitting element 13 is formed on a single crystal substrate such as sapphire by liquid phase growth method or MOCVD method, for example, gallium (Ga) -Al-nitrogen (N), zinc (Zn) -sulfur (S), Zn -Selenium (Se), Silicon (Si) -Carbon (C), Ga-Phosphorus (P), Ga-Al-Arsenic (As), Al-Indium (In) -Ga-P, In-Ga-N, Ga A light emitting layer such as -N or Al-In-Ga-N is formed. Examples of the structure of the light emitting element 13 include a homo structure having a MIS junction and a PN junction, a hetero structure, and a double hetero structure. Further, the emission wavelength of the light emitting element 13 is variously selected from ultraviolet light to infrared light depending on the material of the light emitting layer and the degree of mixed crystal thereof. Note that the light emitting element 13 has a method of using a bonding wire (not shown) for the wiring conductor arranged around the mounting portion 11a and the electrode of the light emitting element 13, or the electrode of the light emitting element 13 is installed on the lower side. Then, they are electrically connected by a method using a flip chip bonding method in which solder bumps are used for connection.

  In addition, the wavelength conversion layer 15 contains phosphors in a translucent member such as an epoxy resin or a silicone resin, and is thermally cured to form a plate and covers the opening of the reflecting member 12, thereby emitting from the light emitting element 13. The visible light and ultraviolet light, which are the emitted light wavelengths, can be absorbed and converted into other long-wavelength light to be emitted. Accordingly, various wavelength conversion layers 15 are used depending on the emission wavelength of the light emitted from the light emitting element 13 or the desired light emitted from the light emitting device, and the light emitting device can extract light having a desired wavelength spectrum. You can get none. The light emitting device can emit white light when the light emitted from the light emitting element 13 and the light from the phosphor are in a complementary color relationship.

  Examples of phosphors include yttrium / aluminum / garnet phosphors activated with cerium (Ce), perylene derivatives, zinc cadmium sulfide activated with Cu and Al, and magnesium oxide activated with Mn. Various types such as titanium oxide can be used. These phosphors may be used alone or in combination of two or more.

Furthermore, the translucent member 16 uses a translucent member such as an epoxy resin or a silicone resin to protect the light emitting element 13 and reduce the difference in refractive index between the light emitting element 13 and the translucent member. Accordingly, it is possible to suppress light from being confined inside the light emitting element 13.
JP 2000-349346 A

  However, in the above-described conventional light emitting device, the light emitted from the light emitting element 13 is absorbed by the phosphor in the wavelength conversion layer 15, and then fluorescence having different wavelengths is emitted from the phosphor in all directions. Some of this fluorescence is emitted upward from the wavelength conversion layer 15 and becomes the emitted light of the light emitting device, but the other part is emitted downward from the wavelength conversion layer 15 or other phosphors. The light is reflected and emitted downward from the wavelength conversion layer 15, and is repeatedly reflected on the inner peripheral surface 12 a of the reflection member 12 and the wavelength conversion layer 15 to be confined in the light emitting device. Alternatively, the light is returned to the light emitting element 13 and absorbed.

  Also, light that has not been emitted to the outside because it has been emitted from the wavelength conversion layer 15 to the lower side is bounced back by the reflecting member 12 after being emitted to the lower side, and is emitted to the outside by passing through the wavelength conversion layer 15 again. There is also light that is emitted from the light emitting device. However, the light that has been repeatedly reflected and passed through the wavelength conversion layer 15 a plurality of times in this way is absorbed in energy, and the emitted light intensity is attenuated.

  As described above, the conventional light emitting device has a problem that it is difficult to improve the emitted light intensity and luminance of the light emitting device.

  Accordingly, the present invention has been completed in view of the above-described conventional problems, and an object of the present invention is to provide a light emitting device having high radiated light intensity and high luminance and high luminous efficiency.

  The light emitting device of the present invention has a base on which a light emitting element mounting portion is formed on the upper main surface, and an inner peripheral surface that is attached to the upper main surface of the base so as to surround the mounting portion. A frame-shaped first reflecting member formed into a surface, and a frame-shaped first reflecting member attached to the upper main surface of the base body so as to surround the first reflecting member and having an inner peripheral surface as a light reflecting surface And the light-emitting element placed on the placement portion, and a translucent member provided inside the second reflective member so as to cover the light-emitting element and the first reflective member And light reflection for reflecting light emitted from the light emitting element, which is provided inside or on the surface of the translucent member above the light emitting element and spaced from the first and second reflecting members. And a wavelength change for converting the wavelength of light emitted by the light emitting element, which is attached to the inner peripheral surface of the layer and the second reflecting member. Characterized in that it comprises a layer.

  The light emitting device of the present invention has a flat substrate and a side wall portion bonded to the upper main surface of the substrate and having a light emitting element mounting portion formed on the upper surface and an inner peripheral surface serving as a light reflecting surface. A first reflecting member formed so as to surround the mounting portion, and a frame attached to an upper main surface of the base so as to surround the first reflecting member and having an inner peripheral surface as a light reflecting surface Second reflective member, the light emitting element placed on the mounting portion, and the inner side of the second reflective member so as to cover the light emitting element and the first reflective member Light emitted from the light emitting element, which is provided in the inside or on the surface of the translucent member and the translucent member located above the light emitting element and spaced from the first and second reflecting members. The light-emitting element that is attached to the light-reflecting layer that reflects and the inner peripheral surface of the second reflecting member emits light. Wherein the of have and a wavelength conversion layer for converting the wavelength.

  In the light-emitting device of the present invention, preferably, the mounting portion protrudes so that a height is higher than a lower end of the inner peripheral surface of the first reflecting member.

  In the light emitting device of the present invention, preferably, the light reflecting layer has an outer peripheral portion passing through an end portion of the light emitting element and an upper end of the inner peripheral surface of the first reflecting member on the opposite side of the end portion. It is located on the second reflecting member side with respect to a straight line.

  The illuminating device of the present invention is characterized in that the light emitting device of the present invention is installed in a predetermined arrangement.

  A light-emitting device according to a first aspect of the present invention includes a base having a light-emitting element mounting portion formed on an upper main surface, and an inner circumference attached to the upper main surface of the base so as to surround the mounting portion. A frame-shaped first reflecting member whose surface is a light reflecting surface and a frame shape whose inner peripheral surface is a light reflecting surface attached to the upper main surface of the base so as to surround the first reflecting member A second reflective member, a light emitting element placed on the placement portion, a translucent member provided inside the second reflective member so as to cover the light emitting element and the first reflective member, and light emission A light reflecting layer for reflecting light emitted from the light emitting element, which is provided inside or on the surface of the translucent member located above the element and spaced from the first reflecting member and the second reflecting member; A wavelength conversion layer that is attached to the inner peripheral surface of the reflective member 2 and converts the wavelength of light emitted from the light emitting element, The light emitted from the optical device can be released to the outside with high strength.

  That is, the light emitted from the light emitting element is collected on the light reflecting layer by the first reflecting member and reflected downward, and then reflected upward by the second reflecting member and emitted to the outside of the light emitting device. The Since the wavelength conversion layer is deposited on the reflection surface of the second reflecting member, the light that has passed through the wavelength conversion layer without being directly emitted to the outside out of the light emitted from the light emitting element is the desired light. The color is adjusted to be released to the outside. Conventionally, even under the wavelength conversion layer, light that has traveled in various directions and was not emitted to the outside is incident on the upper surface of the wavelength conversion layer by the second reflecting member after being incident from the upper surface of the wavelength conversion layer in the present invention. Since the light exits again, the light is not confined in the wavelength conversion layer, and light can be favorably emitted above the light emitting device. Therefore, the wavelength-converted light can be effectively prevented from being emitted above the light emitting device by the wavelength conversion layer and confined in the light emitting device.

  Moreover, the ratio of the light which returns to the light emitting element and is absorbed among the light emitted from the wavelength conversion layer after being reflected by the light reflecting layer is placed so that the first reflecting member surrounds the light emitting element. It is suppressed by this and becomes very small. Therefore, it is possible to increase the intensity and brightness of the emitted light very effectively and to obtain a light emitting device with high luminous efficiency.

  A light emitting device according to a second aspect of the present invention is bonded to a flat substrate and an upper main surface of the substrate, a light emitting element mounting portion is formed on the upper surface, and an inner peripheral surface is a light reflecting surface. The first reflecting member formed so that the side wall portion surrounds the mounting portion, and the inner peripheral surface attached to the upper main surface of the base so as to surround the first reflecting member is the light reflecting surface. The frame-shaped second reflecting member, the light emitting element placed on the placing portion, and the translucency provided inside the second reflecting member so as to cover the light emitting element and the first reflecting member Light reflection for reflecting light emitted by the light emitting element, provided in the interior of or on the surface of the member and the translucent member above the light emitting element, spaced from the first reflecting member and the second reflecting member. And a wavelength conversion layer that is attached to the inner peripheral surface of the second reflecting member and converts the wavelength of light emitted from the light emitting element. By being Bei, it can be released to the outside the light emitted from the light emitting element with high strength.

  That is, the light emitted from the light emitting element is collected on the light reflecting layer by the first reflecting member and reflected downward, and then reflected upward by the second reflecting member and emitted to the outside of the light emitting device. The Since the wavelength conversion layer is deposited on the reflection surface of the second reflecting member, the light that has passed through the wavelength conversion layer without being directly emitted to the outside out of the light emitted from the light emitting element is the desired light. The color is adjusted to be released to the outside. Conventionally, even under the wavelength conversion layer, light that has traveled in various directions and was not emitted to the outside is incident on the upper surface of the wavelength conversion layer by the second reflecting member after being incident from the upper surface of the wavelength conversion layer in the present invention. Since the light exits again, the light is not confined in the wavelength conversion layer, and light can be favorably emitted above the light emitting device. Therefore, the wavelength-converted light can be effectively prevented from being emitted above the light emitting device by the wavelength conversion layer and confined in the light emitting device.

  Moreover, the ratio of the light which returns to the light emitting element and is absorbed among the light emitted from the wavelength conversion layer after being reflected by the light reflecting layer is placed so that the first reflecting member surrounds the light emitting element. It is suppressed by this and becomes very small. Therefore, it is possible to increase the intensity and brightness of the emitted light very effectively and to obtain a light emitting device with high luminous efficiency.

  In addition, heat generated from the light emitting element can be easily transferred to the mounting portion and the side wall portion integrated with the mounting portion. In particular, when the first reflecting member is made of metal, heat is quickly transferred to the mounting portion and the side wall portion, and is also transferred from the entire lower surface of the first reflecting member to the substrate, and is well dissipated from the outer surface of the substrate. The As a result, by suppressing the temperature rise of the light emitting element, it is possible to suppress cracks in the joint caused by the difference in thermal expansion between the light emitting element and the first reflecting member. In addition, by efficiently conducting heat from the entire lower surface of the first reflecting member to the base to more effectively suppress the temperature rise of the light emitting element and the first reflecting member, the operation of the light emitting element can be stably maintained and Thermal deformation of the inner peripheral surface of the reflecting member 1 can be suppressed. Therefore, stable light characteristics of the light emitting device can be maintained and operated over a long period of time.

  The light emitting device of the present invention is preferably the light emitting device according to the first and second inventions, wherein the mounting portion protrudes so as to be higher than the lower end of the inner peripheral surface of the first reflecting member. Therefore, the light emitted obliquely downward from the light emitting element can be efficiently reflected upward by the first inner peripheral surface, and the light from the light emitting element is reflected on the inner peripheral surface of the first reflecting member. It is possible to suppress confinement inside the light emitting device by the lower end. Therefore, the light emitting device can reduce a loss due to light absorption of the inner peripheral surface of the first reflecting member with respect to light generated from the light emitting element. Thereby, the emitted light intensity of a light-emitting device can be improved.

  In the light emitting device of the present invention, preferably, the outer peripheral portion of the light reflecting layer of the present invention is more than a straight line passing through the end portion of the light emitting element and the upper end of the inner peripheral surface of the first reflecting member opposite to the end portion. By being positioned on the second reflecting member side, most of the light emitted from the light emitting element is collected in the light reflecting layer and reflected downward, so that the light does not pass through the wavelength conversion layer. Direct emission to the outside can be suppressed. As a result, light having a desired wavelength spectrum with no unevenness in emission color and emission distribution can be emitted from the light emitting device with high intensity.

  In other words, if there is a lot of light that goes directly to the outside from the light emitting element without passing through the wavelength conversion layer, the amount of light that is converted to the desired wavelength decreases and the emitted light intensity also weakens. The light emitting element emits light by disposing the portion on the second reflecting member side with respect to a straight line passing through the end of the light emitting element and the upper end of the inner peripheral surface of the first reflecting member on the opposite side of the end. The light emitted directly between the light reflecting layer and the first reflecting member can be reduced. In this way, most of the light emitted from the light-emitting element can be transmitted to the wavelength conversion layer, so that the amount of light that is wavelength-converted increases, the wavelength conversion efficiency is improved, and the desired wavelength spectrum is obtained. The light it has can be emitted with high intensity.

  Since the light emitting device of the present invention is installed in a predetermined arrangement, the lighting device of the present invention uses light emission by recombination of electrons of a light emitting element made of a semiconductor. Thus, a small illuminating device that can have lower power consumption and longer life than the existing illuminating device can be obtained. As a result, fluctuations in the center wavelength of light generated from the light emitting element can be suppressed, light can be emitted with a stable radiant light intensity and radiant light angle (light distribution distribution) over a long period of time, and an irradiation surface It is possible to provide a lighting device in which uneven color and uneven illuminance distribution are suppressed.

  In addition, the light emitting device of the present invention is installed in a predetermined arrangement as a light source, and by installing a reflection jig, an optical lens, a light diffusing plate, etc. optically designed in an arbitrary shape around these light emitting devices, It can be set as the illuminating device which radiates | emits the light of this light distribution.

  The light-emitting device according to the first aspect of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of a light emitting device of the present invention. In this figure, 1 is a base, 2 is a first reflecting member, 4 is a second reflecting member, 4 a is an inner peripheral surface of the second reflecting member 4, and 6 is injected inside the second reflecting member 4. The translucent member 5 is disposed above the light emitting element 3 and inside the translucent member 6 or on the surface (inside in FIG. 1) with a gap from the first reflecting member 2 and the second reflecting member 4. The light reflecting layer 8 reflects the light emitted from the light emitting element 3, and 8 is a fluorescent light that is attached to the inner peripheral surface 4 a of the second reflecting member 4 and converts the wavelength of the light emitted from the light emitting element 3. The generated wavelength conversion layer mainly constitutes a light-emitting device for housing the light-emitting element 3.

  The substrate 1 is made of alumina ceramic, aluminum nitride sintered body, mullite sintered body, ceramic such as glass ceramic, metal such as Fe—Ni—Co alloy or Cu—W, or resin such as epoxy resin, A placement portion 1 a on which the light emitting element 3 is placed is formed on the upper surface of the base 1.

  The base 1 is soldered, Ag brazed, or the like so that the first reflecting member 2 surrounds the placement portion 1a on the upper main surface, and the second reflecting member 4 surrounds the first reflecting member 2. It is attached by a bonding material such as a resin adhesive such as an epoxy resin. The first reflecting member 2 has a desired surface accuracy around the light emitting element 3 (for example, in the longitudinal section of the light emitting device, the light reflecting surfaces provided on both sides of the light emitting element 3 with the light emitting element 3 in between are symmetrical. The second reflecting member 4 is attached around the first reflecting member 2 so that an inner peripheral surface (hereinafter referred to as a first inner peripheral surface) 2a is provided. It is attached so that an inner peripheral surface (hereinafter referred to as a second inner peripheral surface) 4a is provided with surface accuracy. Thereby, the light emitted from the light emitting element 3 by the first reflecting member 2 is collected and reflected by the light reflecting layer 5, and then proceeds to the wavelength converting layer 8 to be wavelength-converted. The light is efficiently emitted to the outside of the light emitting device by the reflecting member 4. As a result, the light emitting device has high radiated light intensity and high luminance, and can improve the light emission efficiency.

  When the light from the light emitting element 3 is thus collected on the light reflecting layer 5 by the first reflecting member 2, the light from the light emitting element 3 enters the light reflecting layer 5 at various angles. The light incident at various angles similarly travels from the light reflecting layer 5 to the second reflecting member 4 at various reflection angles, and is incident on the second reflecting member 4 evenly. Thereafter, the light emitted from the light emitting device to the outside is also emitted uniformly, and as a result, the color unevenness of the light output from the light emitting device is suppressed.

  In addition, as for the 2nd reflection member 4, it is preferable that the vertical cross-sectional shape of the wavelength conversion layer 8 deposited on it is a concave curved surface. As a result, the light emitted downward from the light reflecting layer 5 is reflected upward as light having high directivity by the wavelength conversion layer 8 and the second reflecting member 4 and is emitted to the outside of the light emitting device. . Therefore, these light-emitting devices are optimal as illumination devices that can efficiently irradiate light onto the irradiation surface.

  Moreover, the 1st reflection member 2 and the 2nd reflection member 4 may produce the 1st reflection member 2 and the 2nd reflection member 4 integrally by die shaping | molding or cutting. Thereby, the heat of the light emitting element 3 is dissipated to the whole light emitting device through the first reflecting member 2 and the second reflecting member 4, and the heat radiation area of the light emitting device is increased, so that Temperature rise is suppressed.

  Moreover, it is preferable that the mounting portion 1a protrudes so that the height is higher than the lower end of the first inner peripheral surface 2a of the first reflecting member 2 as shown in FIG. Thereby, light emitted obliquely downward from the light emitting element 3 is efficiently collected upward by the first reflecting member 2, reflected downward by the light reflecting layer 5, and wavelength converted by the wavelength conversion layer 8. The light emitted from the light emitting element 3 increases, and the radiation intensity of the light emitting device is improved.

  Such a protruding mounting portion 1a can be integrally fired by removing the periphery thereof by polishing, cutting, etching, or the like, or by laminating the ceramic green sheets to be the base 1 and the mounting portion 1a. Thus, it is formed so as to protrude from the upper surface of the substrate 1. Alternatively, another member that becomes the mounting portion 1a may be attached to and formed on the upper main surface of the base body 1 with an adhesive or the like. For example, a mounting portion made of ceramics such as alumina ceramics, aluminum nitride sintered bodies, mullite sintered bodies, glass ceramics, metals such as Fe-Ni-Co alloys and Cu-W, or resins such as epoxy resins The member to be 1a can also be provided by attaching to the upper surface of the substrate 1 with a bonding material such as a brazing material or an adhesive.

  Moreover, as shown in FIG. 6, it is preferable that the mounting part 1a is inclined so that its side surface expands outward as it goes downward. Thus, when the translucent member 6 made of a liquid resin before thermosetting is injected into the second reflecting member 4, the protruding mounting portion 1a and the upper surface of the base 1 or the first inner circumference It is possible to effectively prevent bubbles and air pockets from being formed at the corner between the lower end of the surface 2a. Further, the light emitted from the light emitting element 3 is favorably reflected upward and in the direction of the first inner peripheral surface 2a by the side surface of the protruding mounting portion 1a, and the radiation intensity of the light emitting device can be further improved. . Furthermore, the heat generated in the light emitting element 3 is efficiently diffused and transmitted to the base 1 side via the mounting portion 1a, so that the temperature rise of the light emitting element 3 is more effectively suppressed.

  Further, the mounting portion 1a is formed with a wiring conductor (not shown) for electrically connecting the light emitting element 3. The wiring conductor is led to the outer surface of the light emitting device via a wiring layer (not shown) formed inside the base 1 and connected to an external electric circuit, whereby the light emitting element 3 and the external electric circuit are connected. It will be electrically connected.

  The first reflecting member 2 and the second reflecting member 4 are cut with respect to a metal having high reflectivity such as Al, Ag, Au, platinum (Pt), titanium (Ti), chromium (Cr), and Cu. It is formed by performing processing or mold forming. Or the 1st reflection member 2 and the 2nd reflection member 4 consist of insulators, such as ceramics and resin. The first reflecting member 2 and the second reflecting member 4 are formed of Al, Ag, Au, Pt, Ti, Cr, and the like on the first inner peripheral surface 2a and the second inner peripheral surface 4a by plating or vapor deposition. A highly reflective metal thin film such as Cu may be formed. Further, when the first inner peripheral surface 2a and the second inner peripheral surface 4a are made of a metal that is easily discolored by oxidation of Ag, Cu or the like, a Ni plating layer with a thickness of, for example, about 1 to 10 μm is formed on the surface. It is preferable that an Au plating layer having a thickness of about 0.1 to 3 μm is sequentially deposited by an electrolytic plating method or an electroless plating method. Thereby, the corrosion resistance of the first inner peripheral surface 2a and the second inner peripheral surface 4a is improved, and the deterioration of the reflectance is suppressed.

  Further, the arithmetic average roughness Ra of the first inner peripheral surface 2a and the second inner peripheral surface 4a is preferably 0.004 to 4 μm, whereby the light from the light emitting element 3 and the light reflecting layer 5 are reflected. The reflected light can be reflected well. When Ra exceeds 4 μm, the light from the light emitting element 3 and the light reflecting layer 5 is not uniformly reflected, and diffusely reflects inside the light emitting device, and the light loss tends to increase. On the other hand, if it is less than 0.004 μm, it tends to be difficult to form such a surface stably and efficiently.

  In addition, the first reflecting member 2 may be formed by changing the longitudinal sectional shape of the outer peripheral surface to a curved shape, or by providing a plurality of reflecting members between the first reflecting member 2 and the second reflecting member 4. There is no hindrance.

  In addition, the outer peripheral surface of the first reflecting member 2 is preferably a light reflecting surface. As a result, even if there is light that travels in the direction of the outer peripheral surface of the first reflecting member 2 in the light emitting device out of the light reflected by the second reflecting member 4, the first reflection is performed. Since the light reflecting layer is formed on the outer peripheral surface of the member 2, the light is reflected there and can be directed upward.

  The distance between the upper end of the first reflecting member 2 and the lower surface of the light reflecting layer 5 is preferably 0.5 to 3 mm. If it is less than 0.5 mm, it is difficult to reflect light reflected downward from the light reflecting layer 5 to the second reflecting member 4 outside the first reflecting member 2, and it is difficult to improve the radiation efficiency. . On the other hand, if the thickness exceeds 3 mm, light from the light emitting element 3 is likely to be emitted directly from the gap between the light reflecting layer 5 and the first reflecting member 2 without passing through the wavelength conversion layer 8, resulting in uneven color of the emitted light. And unevenness in strength tends to occur.

  The light emitting element 3 is electrically connected to the wiring conductor formed on the substrate 1 by wire bonding or a flip chip bonding method in which the electrodes of the light emitting element 3 are connected to each other by solder bumps. Preferably, the connection is made by a flip chip bonding method. Thereby, since the wiring conductor can be provided immediately below the light emitting element 3, it is not necessary to provide a space for providing the wiring conductor on the upper surface of the base 1 around the light emitting element 3. Therefore, it is possible to effectively suppress the light emitted from the light emitting element 3 from being absorbed in the space of the wiring conductor of the base body 1 and the radiation light intensity from being lowered.

  This wiring conductor is formed by, for example, forming a metallized layer of a metal powder such as W, Mo, Cu, Ag, or by burying a lead terminal such as an Fe-Ni-Co alloy, or by forming a wiring conductor. An input / output terminal made of an insulating material is provided by being fitted and joined to a through hole provided in the base 1.

  It should be noted that the exposed surface of the wiring conductor should be coated with a metal having excellent corrosion resistance, such as Ni or Au, with a thickness of about 1 to 20 μm, which can effectively prevent oxidative corrosion of the wiring conductor. The electrical connection between the light emitting element 3 and the wiring conductor can be strengthened. Therefore, for example, an Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited on the exposed surface of the wiring conductor by an electrolytic plating method or an electroless plating method. Is more preferable.

  The translucent member 6 is made of a translucent resin such as an epoxy resin or a silicone resin, or translucent glass, and covers the light emitting element 3 and the light reflection layer 5 as necessary and the first reflective member 2. And injected into the second reflecting member 4. Thereby, the refractive index difference between the inner side and the outer side of the light emitting element 3 and the light reflecting layer 5 is reduced, and more light can be extracted from the light emitting element 3 and the light reflecting layer 5. Furthermore, when the translucent member 6 is made of the same material as the translucent member constituting the wavelength conversion layer 8, the light emission intensity from the light emitting device is improved, and the emitted light intensity and luminance can be remarkably improved.

  Moreover, the wavelength conversion layer 8 is made to contain the fluorescent substance and pigment which can carry out wavelength conversion of the light from the light emitting element 3, and translucent members, such as an epoxy resin, a silicone resin, and glass. The wavelength conversion layer 8 is manufactured by, for example, applying a silicone resin containing a phosphor in the form of a mist such as a sprayer or a spray to the inner peripheral surface of the reflection member 4 and curing the silicone resin by heating. To form.

  Since the light reflecting layer 5 is disposed above the light emitting element 3, the light directly irradiated from the light emitting element 3 or the light reflected by the first reflecting member 2 is reflected downward by the light reflecting layer 5. By passing through the wavelength conversion layer 8, light having a desired wavelength spectrum that has been wavelength-converted by the phosphor is extracted.

  The material of the light reflecting layer 5 is a metal, resin, ceramics, or the like that has high reflectivity in the near ultraviolet to visible light region, such as aluminum for a metal, polyester, polyolefin, or Spectralon for a resin (a diffuse reflection material manufactured by Labsphere). As for ceramics, alumina ceramics and the like are listed as materials. Alternatively, the light reflecting layer 5 may be formed by depositing Ag or Au on the surface of a substrate made of metal, resin, ceramics or the like by a known thin film forming method such as plating or vapor deposition.

  When the light reflecting layer 5 is made of an aluminum plate, for example, the light reflecting layer 5 is formed into a disk shape by punching or cutting, and a light scattering material such as barium sulfate or titanium oxide is formed on the surface thereof. Can be formed in a resin to form a light reflection layer 5 having a light scattering surface with a high reflectance. As a method for fixing the light reflecting layer 5 in the light emitting device, for example, the light transmissive member 6 is injected to the substantially upper end of the second reflecting member 4 and thermally cured, and then the light reflecting layer 5 is formed thereon. Can be fixed by injecting uncured translucent member 6 from above and thermosetting it.

  Further, as shown in FIG. 1, the light reflecting layer 5 is disposed above the light emitting element 3 and inside the translucent member 6 so as to be spaced apart from the first reflecting member 2 and the second reflecting member 4. Also good. In this case, it is possible to effectively prevent the light reflecting layer 5 from being peeled off from the translucent member 6. As shown in FIG. 2, the light reflecting layer 5 may be disposed above the light emitting element 3 and on the surface of the translucent member 6 so as to be spaced from the first reflecting member 2 and the second reflecting member 4. Good. In this case, since the space | interval of the 1st light reflection member 2 and the light reflection layer 5 can be enlarged more, most of the light reflected from the light reflection layer 5 passes through the space | interval, and becomes the wavelength conversion layer 8 Therefore, it becomes easier to enter, and the light emission efficiency of the light emitting device can be improved and the intensity and brightness of the emitted light can be improved.

  Further, as shown in FIG. 7, the light reflecting layer 5 has an outer peripheral portion that is a straight line passing through the end portion of the light emitting element 3 and the upper end of the inner peripheral surface 2a of the first reflecting member 2 opposite to the end portion. Is preferably located on the second reflecting member 4 side. Thereby, it can suppress that the light from the light emitting element 3 is radiated | emitted directly outside the light-emitting device. As a result, the light emitting device can irradiate light with no unevenness in emission color or emission distribution.

  Further, as shown in FIGS. 8 and 9, the light reflecting layer 5 preferably has a longitudinal cross-sectional shape that is a convex curved surface toward the light emitting element 3. As a result, the light reflected by the lower surface of the light reflecting layer 5 is uniformly applied to the wavelength converting layer 8 attached to the second reflecting member 4, and the color unevenness of the fluorescence from the wavelength converting layer 8 is thus determined. Is suppressed. Therefore, the optical characteristics of the light emitting device can be improved.

  Further, the translucent member 6 may be filled with different translucent materials 6 on the inner side and the outer side of the first reflecting member 2 as shown in FIG. For example, the inner side and the outer side of the first reflecting member 2 are filled with translucent materials 6 having different refractive indexes, and the refractive index gradually decreases as the light emitted from the light emitting element 3 travels toward the outside of the light emitting device. The translucent member is preferably determined so as to pass toward the translucent member. That is, the light-emitting element 3, the light-transmitting member 7, and the light-transmitting member 7 injected to the upper end inside the first reflecting member 2 and the light-transmitting member 6 injected to the inside of the second reflecting member 4. It is preferable to make the refractive index smaller in the order of the member 7, the translucent member 6, and the air layer. Because, for the light-transmissive member 7, the refractive index of the light emitting element 3 itself is extremely high. Therefore, in order to extract light from the light emitting element 3 as much as possible, a high refractive index close to the refractive index of the light emitting element 3 is used. It is because it is good to cover the light emitting element 3 with the translucent member 7 which has. Moreover, in order to suppress total reflection with respect to light (fluorescence) emitted in all directions from the wavelength conversion layer 8 attached to the second reflecting member 4a, the air layer and the translucent member 6 as much as possible. It is necessary to reduce the difference in refractive index between Therefore, since the light loss at each interface can be suppressed by gradually reducing the refractive index from the light emitting element 3 to the translucent member 7, the translucent member 6, and the air layer, the refractive index is as described above. It is preferable to select materials so that they have a proper order.

  The translucent member 6 and the translucent member 7 can be selected in consideration of the refractive index difference and the transmissivity so that the emitted light intensity of the light emitting device is maximized.

  Next, the second invention of the present invention will be described. In addition, in 2nd invention of this invention, it is the same as said 1st invention except the mounting part 2b being formed in the 1st reflection member 2, and detailed description is abbreviate | omitted.

  As shown in FIG. 3A, the first reflecting member 2 has a mounting portion 2b on which the light emitting element 3 is mounted on the upper surface, and an inner peripheral surface that surrounds the mounting portion 2b is a light reflecting surface. The side wall 2c is attached to the central portion of the upper main surface of the base 1. Further, a frame-like second reflecting member 4 having a wavelength conversion layer formed on the second inner peripheral surface 4 a is attached to the outer peripheral portion of the upper main surface of the base 1 at the outer peripheral portion of the first reflecting member 2. Worn. The inside of the second reflecting member 4 is filled with a translucent member 6 so as to cover the light emitting element 3 and the first reflecting member 2, and above the light emitting element 3 and the translucent member. A light reflecting layer 5 that reflects light emitted from the light emitting element 3 is disposed inside or on the surface of the light emitting element 3 with a space between the first reflecting member 2 and the second reflecting member 4.

  Thereby, after the light emitted from the light emitting element 3 is reflected downward by the light reflecting layer 5, it passes through the wavelength conversion layer 8 and is reflected upward by the second reflecting member 4. The light is emitted to the outside of the light emitting device through the gap with the second reflecting member 4. As a result, it is possible to extremely effectively prevent light from being emitted from the wavelength conversion layer 8 in any direction such as the lower side and confined in the light emitting device, increasing the emitted light intensity and luminance, and having high luminous efficiency. A light-emitting device can be obtained.

  In addition, the heat generated from the light emitting element 3 can be easily transmitted to the mounting portion 2b and the side wall portion 2c integrated with the mounting portion 2b. In particular, when the first reflecting member 2 is made of metal, heat is quickly transferred to the side wall portion 2c and is also transferred from the entire lower surface of the first reflecting member 2 to the base 1 and is well dissipated from the outer surface of the base 1. Is done. As a result, the temperature rise of the light emitting element 3 can be suppressed, and cracks in the joint caused by the difference in thermal expansion between the light emitting element 3 and the first reflecting member 2 can be suppressed. In addition, by efficiently conducting heat from the entire lower surface of the first reflecting member 2 to the base 1 to suppress the temperature rise of the light emitting element 3 and the first reflecting member 2 more effectively, the operation of the light emitting element 3 is stabilized. The thermal deformation of the inner peripheral surface of the first reflecting member 2 can be suppressed while maintaining the above. Therefore, stable light characteristics of the light emitting device can be maintained well over a long period of time.

  Note that the light emitting element 3 has a wiring conductor (not shown) formed in the base body 1 through the through hole 2d formed in the inner peripheral surface 2a surrounding the mounting portion 2b as shown in FIG. Are electrically connected by a bonding wire 9 to supply power.

Further, as shown in FIG. 4, the first reflecting member 2 and the second reflecting member 4 are produced by integrally molding the first reflecting member 2 and the second reflecting member 4 by molding or cutting. The reflecting member 10 may be used. By being integrated, the heat of the light emitting element 3 is more dissipated to the whole light emitting device through the first reflecting member 2 and the second reflecting member 4, and the heat radiation area of the light emitting device is increased, and the light emitting element In addition, the light emitting device of the present invention can be provided by installing one light emitting device in a predetermined arrangement, or a plurality of light emitting devices, for example, a lattice shape, a staggered shape, a radial shape, or a plurality of light emitting devices. It is possible to obtain an illuminating device by providing a predetermined arrangement such as a plurality of concentrically formed circular or polygonal light emitting device groups composed of the above light emitting devices. Thereby, since light emission by recombination of electrons of the light emitting element 3 made of a semiconductor is used, it is possible to achieve lower power consumption and longer life than a lighting device using a conventional discharge, and generate less heat. It can be set as a small illuminating device. As a result, fluctuations in the center wavelength of the light generated from the light emitting element 3 can be suppressed, and light can be emitted with a stable radiant light intensity and radiant light angle (light distribution distribution) over a long period of time. It can be set as the illuminating device by which the color nonuniformity in the surface and the bias of illuminance distribution were suppressed.

  In addition, the light emitting device of the present invention is installed in a predetermined arrangement as a light source, and by installing a reflection jig, an optical lens, a light diffusing plate, etc. optically designed in an arbitrary shape around these light emitting devices, It can be set as the illuminating device which can radiate | emit the light of this light distribution.

  For example, a plurality of light emitting devices 101 are arranged in a plurality of rows on the light emitting device driving circuit board 102 as shown in the plan view and the cross-sectional view shown in FIGS. 11 and 12, and are optically designed around the light emitting device 101 in an arbitrary shape. In the case of an illuminating device in which the reflecting jig 9 is installed, in a plurality of light emitting devices 101 arranged on one adjacent row, an arrangement in which the interval between the adjacent light emitting devices 101 is not shortest, a so-called staggered pattern It is preferable that That is, when the light emitting devices 101 are arranged in a grid, the glare is strengthened by arranging the light emitting devices 101 as light sources on a straight line, and such a lighting device enters human vision. Thus, discomfort and eye damage are likely to occur, but by forming a staggered pattern, glare is suppressed and discomfort and damage to the eyes of the human eye can be reduced. Furthermore, since the distance between adjacent light emitting devices 101 is increased, thermal interference between adjacent light emitting devices 101 is effectively suppressed, and heat in the light emitting device driving circuit board 102 on which the light emitting devices 101 are mounted is reduced. Clouding is suppressed, and heat is efficiently dissipated to the outside of the light emitting device 101. As a result, it is possible to manufacture a long-life lighting device that has little obstacle to human eyes and has stable optical characteristics over a long period of time.

  Further, the lighting device is a concentric arrangement of a circular or polygonal light emitting device 101 group composed of a plurality of light emitting devices 101 on the light emitting device driving circuit board 102 as shown in the plan view and the sectional view shown in FIGS. In the case of the illuminating device formed in a plurality of groups, it is preferable that the number of the light emitting devices 101 in one circular or polygonal light emitting device 101 group is increased from the central side of the illuminating device to the outer peripheral side. Thereby, it is possible to arrange more light emitting devices 101 while maintaining an appropriate interval between the light emitting devices 101, and it is possible to further improve the illuminance of the lighting device. In addition, the density of the light emitting device 101 in the central portion of the lighting device can be reduced to suppress heat accumulation in the central portion of the light emitting device driving circuit board 102. Therefore, the temperature distribution in the light emitting device driving circuit board 102 becomes uniform, heat is efficiently transmitted to the external electric circuit board and the heat sink on which the lighting device is installed, and the temperature rise of the light emitting device 101 can be suppressed. As a result, the light-emitting device 101 can operate stably over a long period of time, and a long-life lighting device can be manufactured.

  Examples of such lighting devices include general lighting fixtures, chandelier lighting fixtures, residential lighting fixtures, office lighting fixtures, store lighting, display lighting fixtures, street lighting fixtures, used indoors and outdoors. Guide light fixtures and signaling devices, stage and studio lighting fixtures, advertising lights, lighting poles, underwater lighting lights, strobe lights, spotlights, security lights embedded in power poles, emergency lighting fixtures, flashlights, Examples include electronic bulletin boards and the like, backlights for dimmers, automatic flashers, displays and the like, moving image devices, ornaments, illuminated switches, optical sensors, medical lights, in-vehicle lights, and the like.

  Examples of the light emitting device of the present invention are shown below. First, a substrate 1 made of alumina ceramic to be the substrate 1 was prepared. As shown in FIG. 5, the base body 1 is integrally formed so that the mounting portion 1a protrudes, and the upper surface of the mounting portion 1a and the upper surface of the base body 1 other than the mounting portion 1a are parallel to each other. I made it.

  The base body 1 has a rectangular parallelepiped mounting portion 1a having a width of 0.35 mm, a depth of 0.35 mm, and a thickness of 0.15 mm formed at the center of the upper surface of a rectangular parallelepiped having a width of 17 mm, a depth of 17 mm, and a thickness of 0.5 mm.

  In addition, a wiring conductor for electrically connecting the light emitting element 3 and the external electric circuit board through an internal wiring formed inside the base body 1 is formed at a portion where the light emitting element 3 of the mounting portion 1a is mounted. did. The wiring conductor was formed into a circular pad having a diameter of 0.1 mm by a metallized layer made of Mo—Mn powder, and a Ni plating layer having a thickness of 3 μm and an Au plating layer having a thickness of 2 μm were sequentially deposited on the surface thereof. Further, the internal wiring inside the substrate 1 was formed by an electrical connection portion made of a through conductor, so-called through hole. This through hole was also formed with a metallized conductor made of Mo-Mn powder in the same manner as the wiring conductor.

The first reflecting member 2 has a diameter of the uppermost end of the first inner peripheral surface 2a of 2.7 mm and a height of 1.5 mm, and the lower end of the first inner peripheral surface 2a (the upper surface of the base 1). The height from the lower surface joined to the lower side of the inclined surface of the first inner peripheral surface 2a) was 0.1 mm. Further, the shape of the first inner peripheral surface 2a in the cross section orthogonal to the upper main surface of the base body 1 is such that the height from the lower end of the first inner peripheral surface 2a is Z ₁ and the radius of the inner dimension is r ₁ . Sometimes Z ₁ = (cr ₁ ² ) / [1+ {1- (1 + k) c ² r ₁ ² } ^1/2 ]
The constant k is -1.053, and the curvature c is 1.818. The arithmetic average roughness Ra of the first inner peripheral surface 2a was 0.1 μm.

The second reflecting member 4 has a diameter of the uppermost end of the second inner peripheral surface 4a of 16.1 mm and a height of 3.5 mm. The height of the lower end of the second inner peripheral surface 4a (the upper surface of the base 1) The height from the lower surface joined to the lower side of the inclined surface of the second inner peripheral surface 4a) was 0.18 mm. Further, the shape of the second inner peripheral surface 4a in the cross section orthogonal to the upper main surface of the substrate 1 is such that the height from the lower end of the second inner peripheral surface 4a is Z ₂ and the radius of the inner dimension is r ₂ . Sometimes Z ₂ = (cr ₂ ² ) / [1+ {1- (1 + k) c ² r ₂ ² } ^1/2 ]
The constant k is -2.3 and the curvature c is 0.143. The arithmetic average roughness Ra of the second inner peripheral surface 4a was 0.1 μm.

  Next, the silicone resin containing the phosphor is applied to the inner peripheral surface 4a of the second reflecting member 4 by spraying it in the form of a mist, and the wavelength conversion layer 8 is cured by heating to cure the silicone resin. Formed.

  Then, an Au—Sn bump is provided on the wiring conductor formed on the upper surface of the substrate 1, and the light emitting element 3 is joined to the wiring conductor via the Au—Sn bump, and the first reflecting member 2 is mounted on the mounting portion. The second reflecting member 4 was joined to the outer peripheral portion of the base 1 with a resin adhesive so as to surround the first reflecting member 2 so as to surround 1a.

  Then, using a dispenser, the translucent member 6 made of a transparent silicone resin is injected to almost the upper ends of the first reflecting member 2 and the second reflecting member 4, and is thermally cured in an oven. The sex member 6 was formed.

  Next, after forming aluminum into a disk shape by stamping, a silicone resin containing barium sulfate as a light scattering material is applied to the surface in a mist form to have a highly reflective light scattering surface. A light reflecting layer 5 was formed. Then, the light reflecting layer 5 is placed on the translucent member 6 which is injected almost to the upper end of the second reflecting member 4 and thermally cured, and the translucent member made of an uncured silicone resin is placed thereon. The light reflecting layer 5 was fixed by injecting 6 and thermosetting to obtain a light emitting device.

  Further, a light-emitting device having the configuration shown in FIG. 15 was manufactured as a light-emitting device of a comparative example.

  In FIG. 15, the light emitting device has a mounting portion 11a for mounting the light emitting element 13 at the center of the upper surface, and leads that electrically connect the inside and outside of the light emitting device from the mounting portion 11a and its periphery. A base 11 made of an insulator on which a wiring conductor (not shown) made of a terminal is formed, and is bonded and fixed to the upper surface of the base 11, and is inclined so that the inner peripheral surface 12a spreads outward as it goes upward. And a frame-like reflecting member 12 whose inner peripheral surface 12a is a reflecting surface for reflecting the light emitted from the light emitting element 13, and a phosphor for converting the wavelength of the light emitted from the light emitting element 13 to the translucent member It mainly comprises a wavelength conversion layer 15 containing (not shown) and a translucent member 16 filled inside the reflecting member 12 to protect the light emitting element 13.

  The substrate 11 is made of an aluminum oxide sintered body (alumina ceramic). A metal paste whose wiring conductor is made of W was formed on the upper surface of the substrate 11 by firing at a high temperature.

  The reflecting member 12 is made of Al and formed by cutting. Furthermore, the inner peripheral surface 12a of the reflecting member 12 was formed by depositing Al by a vapor deposition method. The reflecting member 12 was joined to the upper surface of the base 11 by solder so as to surround the mounting portion 11a with the inner peripheral surface 12a.

  The light-emitting element 13 was fabricated by forming a Ga—Al—N light-emitting layer on a sapphire substrate by a liquid phase growth method. The structure of the light emitting element 13 has a MIS junction (metal insulator semiconductor structure). The light emitting element 13 was electrically connected using a flip chip bonding method in which the electrode of the light emitting element 13 was placed on the lower side and connected by solder bumps.

  The wavelength conversion layer 15 contains a phosphor in an epoxy resin translucent member, which is injected into the upper surface of the translucent member 16 and thermally cured, and the translucent member 16 reflects the epoxy resin. It was formed by injecting inside the member 12 so as to cover the light emitting element 13 and thermosetting.

  The phosphor used was an yttrium / aluminum / garnet phosphor activated with Ce.

  About these light-emitting devices, the electric current of 20 mA was applied, it was made to light, and the total luminous flux amount was measured. As a result, the light emitting device of the comparative example having the configuration in FIG. 15 was 8.5 lm / W, and the light emitting device having the configuration in FIG. 5 was 14 lm / W. According to the present invention, it has been found that the effect of about 1.6 times can be obtained in the total luminous flux, and it has been confirmed that the superiority of the light emitting device of the present invention is confirmed.

  It should be noted that the present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the scope of the present invention.

  For example, a plurality of light emitting elements 3 may be provided on the base 1 in order to improve the radiation intensity. It is also possible to arbitrarily adjust the angles of the first inner peripheral surface 2a and the second inner peripheral surface 4a and the distance from the upper end of the second inner peripheral surface 4a to the upper surface of the translucent member 6. With this, it is possible to obtain better color rendering by providing a complementary color gamut.

  Further, the lighting device of the present invention is not limited to one in which a plurality of light emitting devices 101 are installed in a predetermined arrangement, but may be one in which one light emitting device 101 is installed in a predetermined arrangement.

It is sectional drawing which shows an example of embodiment of the light-emitting device of 1st invention of this invention. It is sectional drawing which shows the other example of embodiment of the light-emitting device of 1st invention of this invention. (A) (b) is sectional drawing in a different position which shows an example of embodiment of the light-emitting device of 2nd invention of this invention, respectively. It is sectional drawing which shows the other example of embodiment of the light-emitting device of 2nd invention of this invention. It is sectional drawing which shows the other example of embodiment of the light-emitting device of 1st invention of this invention. It is sectional drawing which shows the other example of embodiment of the light-emitting device of 1st invention of this invention. It is sectional drawing which shows the other example of embodiment of the light-emitting device of 1st invention of this invention. It is sectional drawing which shows the other example of embodiment of the light-emitting device of 1st invention of this invention. It is sectional drawing which shows the other example of embodiment of the light-emitting device of 1st invention of this invention. It is sectional drawing which shows the other example of embodiment of the light-emitting device of 1st invention of this invention. It is a top view which shows an example of embodiment of the illuminating device of this invention. FIG. 12 is a cross-sectional view of the lighting device of FIG. It is a top view which shows the other example of embodiment of the illuminating device of this invention. FIG. 14 is a cross-sectional view of the lighting device of FIG. It is sectional drawing of the conventional light-emitting device.

Explanation of symbols

1: Base 1a: Placement part 2: First reflecting member 2a: First inner peripheral surface 2b: Placement part 2c: Side wall part 3: Light emitting element
4: Second reflecting member 4a: Second inner peripheral surface 5: Light reflecting layer 6, 7: Translucent member 8: Wavelength converting layer

Claims (5)

A base having a light emitting element mounting portion formed on the upper main surface, and a frame-like shape in which the inner peripheral surface is a light reflecting surface attached to the upper main surface of the base so as to surround the mounting portion. A first reflecting member, a frame-like second reflecting member attached to an upper main surface of the base so as to surround the first reflecting member, and having an inner peripheral surface as a light reflecting surface; The light-emitting element placed on the placement unit, a translucent member provided inside the second reflective member so as to cover the light-emitting element and the first reflective member, and above the light-emitting element A light-reflecting layer that reflects light emitted from the light-emitting element, is provided on the inside or on the surface of the translucent member at a distance from the first and second reflecting members, and the second reflecting member. A wavelength conversion layer that is attached to the inner peripheral surface of the reflecting member and converts the wavelength of light emitted from the light emitting element. The light emitting device according to claim and. A flat substrate and a side wall portion which is bonded to the upper main surface of the substrate and has a light emitting element mounting portion formed on the upper surface and whose inner peripheral surface is a light reflecting surface surround the mounting portion. The formed first reflecting member, and a frame-like second reflecting member attached to the upper main surface of the base so as to surround the first reflecting member and having an inner peripheral surface as a light reflecting surface And the light-emitting element placed on the mounting portion, the translucent member provided inside the second reflective member so as to cover the light-emitting element and the first reflective member, and A light reflecting layer for reflecting light emitted from the light emitting element, provided inside or on the surface of the translucent member located above the light emitting element and spaced from the first and second reflecting members; Waves for converting the wavelength of light emitted from the light emitting element, which is attached to the inner peripheral surface of the second reflecting member. Light-emitting device characterized in that it comprises a conversion layer. The light emitting device according to claim 1, wherein the mounting portion protrudes so that a height is higher than a lower end of the inner peripheral surface of the first reflecting member. The light reflecting layer has an outer peripheral portion on the second reflecting member side with respect to a straight line passing through an end portion of the light emitting element and an upper end of the inner peripheral surface of the first reflecting member on the opposite side of the end portion. The light-emitting device according to claim 1, wherein the light-emitting device is located at a position. An illuminating device comprising: the light emitting device according to claim 1 installed in a predetermined arrangement.

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