JP7481610B2 - Light-emitting device - Google Patents

Description

This disclosure relates to a light emitting device.

Light emitting devices are known in which a light emitting element is disposed in a recess of a package provided with a recess, and the light emitting element is sealed with a resin material. For example, the following Patent Document 1 discloses a light emitting device including a base, a light emitting element supported by the base, and a reflective member having an inner peripheral surface formed to surround the light emitting element. The inner peripheral surface of the reflective member functions as a light reflective surface, and reflects light emitted from the light emitting element toward above the light emitting element. In the light emitting device described in Patent Document 1, the inner peripheral surface of the reflective member is covered with a wavelength conversion layer.

JP 2006-066657 A

In the field of light-emitting devices, there is a demand for improved brightness.

A light emitting device according to an embodiment of the present disclosure is a resin package having a plurality of leads including a first lead and a second lead, and a resin body including a first resin part, a second resin part, and a third resin part, and the light emitting device comprises a resin package having a recess formed by the plurality of leads, the first resin part, and the second resin part, at least one light emitting element, a light reflective member, a wavelength conversion member containing a first base material and a first phosphor, and a sealing member containing a second base material, the first resin part constituting an outer surface of the resin package, the second resin part being located between the first lead and the second lead, and over the plurality of leads. A portion of the surface is located on the bottom surface of the recess, the first lead has an element mounting area located on the bottom surface of the recess, the third resin part is located above the bottom surface of the recess and surrounds the element mounting area in a ring shape, the at least one light-emitting element is disposed in the element mounting area, the light-reflecting member is located between the inner wall surface of the recess and the third resin part within the recess of the resin package, the wavelength conversion member is located on the light-reflecting member, and the sealing member covers the at least one light-emitting element and the wavelength conversion member within the recess of the resin package.

Embodiments of the present disclosure can provide a light-emitting device with improved brightness.

1 is a perspective view showing an example of an external appearance of a light-emitting device according to an embodiment of the present disclosure as viewed from above. 2 is a perspective view showing an example of the external appearance of the light emitting device 100 shown in FIG. 1 when viewed from the bottom side. FIG. 1 is a plan view showing an example of the appearance of a structure in which a sealing member 75, a wavelength conversion member 85, and a light reflective member 50 have been removed from a light emitting device 100, as viewed in the normal direction of an upper surface 10a of a resin package 10. FIG. 4 is a schematic cross-sectional view of the light emitting device 100 cut perpendicularly to the upper surface 10a of the resin package 10 at the position of line IV-IV shown in FIG. 4 is a schematic diagram showing a cross section of the light emitting device 100 taken along line VV in FIG. 3, perpendicular to the upper surface 10a of the resin package 10. FIG. 6 is an enlarged schematic diagram showing a first light-emitting element 41 and its periphery in a YZ cross section of the light-emitting device 100 shown in FIG. 5. 11 is a diagram showing a schematic diagram of a reference example of a distribution of a second phosphor in a sealing member 76 that covers a first light-emitting element 41. FIG. FIG. 13 is a schematic cross-sectional view of a light-emitting device according to another embodiment of the present disclosure. FIG. 13 is a schematic cross-sectional view of a light-emitting device according to still another embodiment of the present disclosure. 2 is a plan view showing a schematic view of a part of a lead frame of an aggregate substrate. FIG. 11 is a diagram showing a part of the lead frame, and is a plan view showing a schematic view of the surface opposite to the surface shown in FIG. 10 . FIG. 11 is a plan view showing a schematic view of a portion of the lead frame with a resin molding, the portion corresponding to the four light emitting structures 100L shown in FIG. 10. FIG. 10 is a schematic plan view showing an example in which one light emitting element is arranged in element mounting region 21R. FIG. 13 is a schematic cross-sectional view showing an example in which a light reflective member 50 is formed so as to cover the top of a third resin portion 33. FIG. 5A to 5C are schematic cross-sectional views showing other examples of the shape of the light reflective member located in the recess 11. 1 is a schematic cross-sectional view showing an example of a light reflective member having a laminated structure. 13 is a schematic plan view for explaining another example of the arrangement of grooves 21h provided in the first lead corresponding region 21A. FIG. 1 is a graph showing the results of spectrum measurement for the sample of Example 1. 1 is a graph showing the results of spectrum measurement for the sample of Reference Example 1. FIG. 1 is a graph showing the results of spectral measurement for the sample of Example 1 and the results of spectral measurement for the sample of Reference Example 1 in a single plot. 1 is a diagram showing the measurement results of the total luminous flux for Example 1 and the measurement results of the total luminous flux for Reference Example 1. FIG.

The light-emitting device of the present disclosure will be described in detail below with reference to the drawings. The following embodiments are illustrative, and the configuration of the light-emitting device according to the present disclosure is not limited to the following embodiments. In the following description, terms indicating a specific direction or position (for example, "upper", "lower", and other terms including these terms) may be used. These terms are used merely for the sake of clarity to indicate relative directions or positions in the referenced drawings. The size, positional relationship, etc. of components shown in the drawings may be exaggerated for clarity, and may not reflect the size and positional relationship of the components in an actual light-emitting device. Note that in order to avoid excessive complexity, some elements may be omitted from the drawings.

[Light-emitting device 100]
1 and 2 show an exemplary appearance of a light-emitting device according to an embodiment of the present disclosure. FIG. 1 shows an example of the appearance of a light-emitting device according to an embodiment of the present disclosure when viewed from the top side, and FIG. 2 shows an example of the appearance of the light-emitting device shown in FIG. 1 when viewed from the bottom side. For convenience of explanation, arrows indicating the mutually perpendicular X-direction, Y-direction, and Z-direction are also shown in FIG. 1 and FIG. 2. Arrows indicating these directions may also be shown in other drawings of the present disclosure.

The light emitting device 100 shown in FIG. 1 has a resin package 10 having a recess 11, at least one light emitting element, and a sealing member 75 that covers the light emitting element. The resin package 10 is the housing of the light emitting device 100, and has a resin body 30 including a first resin part 31, a second resin part 32, and a third resin part 33, and a plurality of leads that support the light emitting element. In the configuration illustrated in FIG. 1, the light emitting device 100 includes two light emitting elements 41 and 42. Hereinafter, the light emitting elements 41 and 42 are referred to as the first light emitting element 41 and the second light emitting element 42, respectively. The first light emitting element 41 and the second light emitting element 42 are located in the recess 11 of the resin package 10.

The recess 11 is filled with a sealing member 75. The surface of the sealing member 75, together with the upper surface 10a of the resin package 10, constitutes the upper surface of the light emitting device 100. The sealing member 75 has light transmissivity, and in FIG. 1, the sealing member 75 is depicted as a transparent member in order to show the internal structure of the recess 11. In other drawings of this disclosure, the sealing member 75 may also be depicted as a transparent member, as in FIG. 1. As will be described later, the sealing member 75 may contain phosphor particles. Note that the term "light transmissive" in this specification is interpreted to include the ability to diffuse incident light, and is not limited to being "transparent".

As shown in FIG. 1, a wavelength conversion member 85 and a third resin portion 33 of the resin body 30 of the resin package 10 are disposed inside the recess 11. In this example, the third resin portion 33 of the resin body 30 surrounds the first light-emitting element 41 and the second light-emitting element 42 in a ring shape. In this example, the wavelength conversion member 85 is also formed inside the recess 11 so as to surround the first light-emitting element 41 and the second light-emitting element 42 in a ring shape. For ease of understanding, in FIG. 1, the portion of the structure located inside the recess 11 that corresponds to the wavelength conversion member 85 is shaded.

As will be described in detail later with reference to the drawings, the wavelength conversion member 85 is located on a light reflective member provided inside the recess 11 of the resin package 10. In a typical embodiment of the present disclosure, the light reflective member is located between the inner wall surface of the recess 11 and the third resin part 33, and is formed so as to surround the first light emitting element 41 and the second light emitting element 42. By disposing the wavelength conversion member 85 on the light reflective member in the recess 11, at least a part of the light from the first light emitting element 41 and the second light emitting element 42 can be made to enter the wavelength conversion member 85. In addition, by utilizing the reflection at the interface between the wavelength conversion member 85 and the light reflective member, the light whose wavelength is converted by the wavelength conversion member 85 can be taken out of the resin package 10. Therefore, for example, it is possible to reduce the concentration of the phosphor in the sealing member 75 or to eliminate the inclusion of the phosphor in the sealing member 75. As a result, the light extraction efficiency is improved and the brightness of the light emitting device is increased. Furthermore, as will be explained later with reference to examples, this configuration makes it possible to reduce the concentration of the phosphor in the sealing member 75 while suppressing the spectral modulation, i.e., the change in color, that accompanies the reduction in phosphor concentration.

Each component is explained in detail below.

[Resin package 10]
The resin package 10 has an upper surface 10a and a lower surface 10b located opposite to the upper surface 10a. In the configuration illustrated in Figures 1 and 2, the resin package 10 has a substantially rectangular shape when viewed from above. In Figure 1, one side of the rectangular shape of the upper surface 10a of the resin package 10 coincides with the X direction or the Y direction shown in Figure 1.

The resin package 10 includes four outer surfaces 10c, 10d, 10e, and 10f. The outer surface 10d is located opposite the outer surface 10c, and the outer surface 10f is located opposite the outer surface 10e. The above-mentioned first resin part 31 is a part of the resin body 30 that constitutes these outer surfaces 10c, 10d, 10e, and 10f of the resin package 10. The outer shape of the resin package 10 in a top view is not limited to a rectangular shape, and may be other shapes. In this example, the opening 11a of the recess 11 located on the upper surface 10a of the resin package 10 has an approximately rectangular shape.

The resin package 10 includes a resin body 30 and a plurality of leads formed integrally with the resin body 30. Here, the plurality of leads of the resin package 10 include a first lead 21 and a second lead 22 arranged at a distance from each other, as shown in FIG. 2. A second resin portion 32, which is a part of the resin body 30, is located between the first lead 21 and the second lead 22, whereby the first lead 21 and the second lead 22 are electrically insulated from each other.

2, a part of the lower surface 21b of the first lead 21 and a part of the lower surface 22b of the second lead 22 are exposed from the resin body 30 of the resin package 10. The part of the lower surface 21b of the first lead 21 exposed on the lower surface 10b of the resin package 10 and the part of the lower surface 22b of the second lead 22 exposed on the lower surface 10b of the resin package 10 are located on the same plane. In this specification, "the same plane" also includes an arrangement relationship in which there is a deviation of within ±10 μm. The parts of the first lead 21 and the second lead 22 exposed on the lower surface 10b of the resin package 10 function as terminals for supplying power to the first light-emitting element 41 and the second light-emitting element 42. As illustrated in FIG. 2, the shape of the part of the lower surface 21b of the first lead 21 exposed from the resin body 30 and the shape of the part of the lower surface 22b of the second lead 22 exposed from the resin body 30 may be made different from each other. By making these shapes different from each other, the polarity of the first lead 21 and the second lead 22 can be determined by the shapes of the two parts exposed from the resin body 30.

As described below, the first lead 21 has one or more extensions 21s, and the second lead 22 also has one or more extensions 22s. As shown typically in FIG. 1 and FIG. 2, here, the end face of the extension 21s, which is a part of the first lead 21, is exposed from the outer surfaces 10c, 10e, and 10f of the resin package 10. Also, the end face of the extension 22s, which is a part of the second lead 22, is exposed from the outer surfaces 10d, 10e, and 10f of the resin package 10.

3 is a schematic diagram showing an example of the appearance of the light emitting device 100 with the sealing member 75, the wavelength conversion member 85, and the light reflective member removed, viewed from the normal direction of the upper surface 10a of the resin package 10. The first lead 21 has an upper surface 21a located opposite the lower surface 21b, and the second lead 22 has an upper surface 22a located opposite the lower surface 22b. A part of the upper surface 21a of the first lead 21 and a part of the upper surface 22a of the second lead 22 are exposed from the resin body 30 at the bottom surface 11b of the recess 11. That is, a part of the upper surface 21a of the first lead 21 and a part of the upper surface 22a of the second lead 22 are located at the bottom surface 11b of the recess 11. Note that, like a part of the upper surface 21a of the first lead 21 and a part of the upper surface 22a of the second lead 22, the upper surface 32a of the second resin part 32 is also located at the bottom surface 11b of the recess 11. The bottom surface 11b of the recess 11 refers to the portion of the surface that defines the shape of the recess 11 that is flush with the top surface 21a of the first lead 21 and the top surface 22a of the second lead 22.

In this example, a first light-emitting element 41 and a second light-emitting element 42 are arranged on the upper surface 21a of the first lead 21. That is, the first lead 21 has an element mounting area 21R on the upper surface 21a where at least one light-emitting element is arranged. From the viewpoint of improving brightness, it is preferable that a plating layer that reflects light from the light-emitting element (in this example, the first light-emitting element 41 and the second light-emitting element 42) is formed on the surface of the element mounting area 21R of the first lead 21. Note that in this example, a protective element 60 is arranged on the upper surface 22a of the second lead 22.

The element mounting region 21R of the first lead 21 is located on the bottom surface 11b of the recess 11. The third resin portion 33 of the resin body 30 protrudes from the bottom surface 11b of the recess 11 toward the opening 11a and surrounds the element mounting region 21R. In this example, the third resin portion 33 includes a portion located on the second resin portion 32, and surrounds the element mounting region 21R in a continuous ring shape. The element mounting region 21R is an area of the upper surface 21a of the first lead 21 that is exposed from the resin body 30, and may be the inner area of the ring-shaped third resin portion 33. In a top view, the shape of the inner edge of the ring-shaped third resin portion 33 is not particularly limited, and may be, for example, a polygonal shape or a circular shape.

As shown in FIG. 3, the first light-emitting element 41 and the second light-emitting element 42 are electrically connected to the first lead 21 and the second lead 22 by wires 43. Focusing on the second lead 22, the second lead 22 has a wire connection region 22R. The wire connection region 22R is a region of the upper surface 22a of the second lead 22 that is exposed from the resin body 30, and is a region to which a wire having a connection to the light-emitting element is connected. As with the element mounting region 21R, a plating layer may be located on the surface of the wire connection region 22R. Note that in FIG. 3, the wire connection region 22R is depicted as a shaded region for ease of understanding, but there is not necessarily a clear boundary between the wire connection region 22R and other regions on the upper surface 22a of the second lead 22.

The wire connection region 22R is located outside the region surrounded by the third resin portion 33 of the resin body 30 on the bottom surface 11b of the recess 11. In this example, two wire connection regions 22R are provided on the upper surface 22a of the second lead 22 as an anode or cathode, in response to the fact that the light emitting device 100 includes two elements, the first light emitting element 41 and the second light emitting element 42. The number and arrangement of the wire connection regions 22R can be appropriately changed in the region located between the first resin portion 31 and the third resin portion 33 on the upper surface 22a of the second lead 22 depending on the number of light emitting elements included in the light emitting device, whether multiple light emitting elements are connected in series or in parallel, etc.

The first resin part 31 of the resin body 30 has walls 31c, 31d, 31e, and 31f that form the inner wall surface of the recess 11. The recess 11 of the resin package 10 can be said to be a structure formed by the upper surfaces of the multiple leads, the upper surface of the second resin part 32, and the inner wall surface of the first resin part 31 of the resin body 30. The wall surfaces 31c and 31d face each other, and the wall surfaces 31e and 31f face each other. The wall surfaces 31c, 31d, 31e, and 31f are located on the opposite side of the outer surfaces 10c, 10d, 10e, and 10f, respectively. In the example shown in FIG. 3, two of the wall surfaces 31c, 31d, 31e, and 31f that are adjacent to each other are smoothly connected to form a curved surface, and no clear boundary is formed between the two wall surfaces.

In the example shown in FIG. 3, the opening 11a of the recess 11 has a generally rectangular shape in top view, with three of the four corners being rounded. In the example shown in FIG. 3, one of the four corners of the generally rectangular shape of the opening 11a is chamfered linearly to form a mark Mk on the resin package 10. This mark Mk functions as an anode mark or a cathode mark indicating the polarity of the first lead 21 and the second lead 22. Note that in this example, the outer edge of the bottom surface 11b of the recess 11 is rounded at the four corners in top view to form an arc with a larger radius than the corners of the outer edge of the opening 11a.

Figure 4 shows a schematic cross section of the light emitting device 100 cut perpendicular to the top surface 10a of the resin package 10 near the center of the light emitting device 100. The cross section shown in Figure 4 is a ZX plane cross section of the light emitting device 100 cut at the position of line IV-IV shown in Figure 3. However, to avoid overly complicating the drawing, some elements such as the wire 43 are omitted from Figure 4. Note that Figure 3 is a schematic plan view of the light emitting device 100 with the sealing member 75, wavelength conversion member 85, and light reflective member 50 described below removed, but Figure 4 also shows these sealing member 75, wavelength conversion member 85, and light reflective member 50.

The third resin part 33 is located above the bottom surface 11b of the recess 11 in the resin body 30. As shown in FIG. 4, a light reflective member 50 having an inclined surface 50s is formed in the area between the inner wall surface (wall surfaces 31e, 31f in FIG. 4) of the first resin part 31 and the third resin part 33 on the bottom surface 11b of the recess 11. Since the third resin part 33 has a shape that protrudes from the bottom surface 11b of the recess 11, the third resin part 33 can function as a dam that prevents the material of the light reflective member 50 from flowing into the element mounting region 21R in the process of forming the light reflective member 50. In other words, by providing the third resin part 33 in the resin body 30, it is possible to prevent the side surfaces of the first light emitting element 41 and the second light emitting element 42 from being covered by the light reflective member 50 in the process of forming the light reflective member 50.

The height of the third resin part 33, i.e., the distance from the bottom surface 11b of the recess 11 to the top of the third resin part 33, is, for example, in the range of about 70 μm to 100 μm. The cross-sectional shape of the third resin part 33 is not limited to the shape exemplified in FIG. 4, and various cross-sectional shapes can be adopted. The surface of the third resin part 33 may include an inclined portion that is inclined with respect to the bottom surface 11b of the recess 11 in a cross-sectional view. As described later, the third resin part 33 may be formed from a resin material containing a light-reflective filler such as titanium oxide particles. By having the third resin part 33 have an inclined portion facing the light-emitting element, it is possible to use the surface of the inclined portion as a reflective surface. That is, the light emitted from the light-emitting element and incident on the third resin part 33 can be reflected at the position of the inclined portion toward the opening 11a of the recess 11, improving the light extraction efficiency. That is, higher brightness is obtained. If an inclined portion is provided around the entire circumference of the annular third resin part 33, it is advantageous to improve the light extraction efficiency of the light-emitting device.

In the configuration illustrated in FIG. 4, the inclined surface 50s of the light-reflective member 50 is recessed toward the bottom surface 11b of the recess 11. The surface of the light-reflective member 50 may have a concave shape recessed toward the first resin portion 31 of the resin body 30. Furthermore, in an embodiment of the present disclosure, a wavelength conversion member 85 is disposed on the light-reflective member 50. The remaining space of the recess 11 is filled with a sealing member 75. That is, the sealing member 75 covers the light-emitting elements (in this example, the first light-emitting element 41 and the second light-emitting element 42) disposed in the element mounting region 21R and the wavelength conversion member 85 within the recess 11.

In the configuration illustrated in FIG. 4, the upper surface 21a of the first lead 21 has a groove 21g, and a part of the material of the resin body 30 is located in this groove 21g. FIG. 4 shows an example in which the part of the resin body 30 located inside the groove 21g of the first lead 21 is formed from the same material as the material of the third resin part 33 of the resin body 30. As in this example, it is preferable to place a part of the material of the resin body 30 in the groove 21g provided on the upper surface 21a of the first lead 21, and form the third resin part 33 so that at least a part of it overlaps with the groove 21g. By including a part of the third resin part 33 that overlaps with the groove 21g, the risk of the third resin part 33 peeling off from the first lead 21 can be reduced compared to the case in which the third resin part 33 is formed directly on the upper surface 21a of the first lead 21. As shown in FIG. 4, the width of the portion of the resin body 30 located inside the groove 21g of the first lead 21 is typically larger than the width of the third resin portion 33 located directly above that portion. By making the width of the portion of the resin body 30 located inside the groove 21g of the first lead 21 larger than the width of the third resin portion 33, the area of the interface between the resin body 30 and the first lead 21 can be increased, and peeling of the third resin portion 33 from the first lead 21 can be more effectively suppressed.

In the example shown in FIG. 4, the resin body 30 further has a fourth resin part 34 that covers a part of the upper surface 21a of the first lead 21. As shown in FIGS. 3 and 4, the fourth resin part 34 connects the wall surface 31e of the first resin part 31 and the third resin part 33. As in this example, by providing the fourth resin part 34 that covers the upper surface 21a of the first lead 21 in the resin body 30, the bond between the resin body 30 and the first lead 21 can be made stronger. Note that in the example shown in FIG. 4, the upper surface of the fourth resin part 34 is located higher than the bottom surface 11b of the recess 11.

In this example, the upper surface 21a of the first lead 21 further has two grooves 21h. The grooves 21h are provided on the upper surface 21a at positions overlapping the first light-emitting element 41 and the second light-emitting element 42. As shown in FIG. 4, the first light-emitting element 41 and the second light-emitting element 42 are joined to the upper surface 21a of the first lead 21 by a joining member 44 such as resin or solder. At this time, by forming the grooves 21h at positions overlapping the first light-emitting element 41 and the second light-emitting element 42, a part of the joining member 44 can be disposed inside the grooves 21h. By positioning a part of the joining member 44 inside the grooves 21h, the effect of improving the joining strength between the first lead 21 and the joining member 44 can be obtained.

The grooves 21h are formed, for example, linearly, in the area of the element mounting region 21R that overlaps with the light-emitting elements. The shape, number, arrangement, etc. of the grooves 21h can be changed as appropriate depending on the number and arrangement, etc. of the light-emitting elements, and are not limited to the two linear shapes in this example. Note that when there is only one light-emitting element arranged in the element mounting region 21R, the light-emitting element may be arranged between two grooves.

[First light-emitting element 41, second light-emitting element 42]
Semiconductor light-emitting elements such as LEDs can be used as the first light-emitting element 41 and the second light-emitting element 42. In the configuration illustrated in Fig. 4, the light-emitting device 100 has two light-emitting elements, the first light-emitting element 41 and the second light-emitting element 42. However, the number of light-emitting elements included in the light-emitting device according to the embodiment of the present disclosure is not limited to this example, and may be one, or three or more.

The first light-emitting element 41 and the second light-emitting element 42 may include a nitride semiconductor (In _x Al _y Ga _1-x-y N, 0≦x, 0≦y, x+y≦1) capable of emitting light in the ultraviolet to visible range. The spectrum of light emitted from the first light-emitting element 41 and the second light-emitting element 42 may be the same or different from each other. For example, the first light-emitting element 41 may emit blue light, and the second light-emitting element 42 may emit green light. When the light-emitting device has three light-emitting elements, the three light-emitting elements may emit blue light, green light, and red light, respectively. In the following, an LED that emits blue light will be exemplified as the first light-emitting element 41 and the second light-emitting element 42.

[Joint member 44]
The first light emitting element 41 and the second light emitting element 42 are fixed to the element mounting region 21R of the first lead 21 by a bonding member 44. For example, a resin material that can be used as the base material of the resin body 30 can be used as the bonding member 44. Alternatively, the bonding member 44 can be made of tin-bismuth-based, tin-copper-based, tin-silver-based, or gold-tin-based solder, a conductive paste or bump containing silver, gold, palladium, or the like, a brazing material such as a low melting point metal, or an anisotropic conductive material.

[Wire 43]
The first light-emitting element 41 and the second light-emitting element 42 are electrically connected to the first lead 21 and the second lead 22 by wires 43 (see FIG. 3 ). In the example shown in FIG. 3 , the first light-emitting element 41 and the second light-emitting element 42 are electrically connected in parallel. The first light-emitting element 41 and the second light-emitting element 42 may also be connected in series.

For example, the wire 43 may be a wire of a metal such as gold, copper, silver, platinum, aluminum, or palladium, or an alloy containing one or more of these metals. If the material of the wire 43 contains gold, it is advantageous to obtain a wire that has excellent heat resistance and is less likely to break due to stress from the sealing member 75. If the material of the wire 43 contains silver, it is advantageous to obtain a wire that exhibits high light reflectance. In particular, it is beneficial to use a wire that contains both gold and silver. When the wire 43 is a wire that contains both gold and silver, the silver content can be in the range of, for example, 15% to 20%, 45% to 55%, 70% to 90%, or 95% to 99%. In particular, when the silver content is 45% to 55%, it is possible to reduce the possibility of sulfurization while obtaining a high light reflectance. The diameter of the cross section of the wire 43 can be appropriately selected, and can be, for example, 5 μm to 50 μm. The cross-sectional diameter of the wire 43 is preferably 10 μm or more and 40 μm or less, and even more preferably 15 μm or more and 30 μm or less.

[Protection element 60]
3, the light emitting device 100 may have a protective element 60. As the protective element 60, various protective elements such as a Zener diode can be used. The protective element 60 is disposed on the upper surface 22a of the second lead 22, for example, and embedded in the light reflective member 50. By forming the light reflective member 50 so as to cover the protective element 60, it is possible to suppress absorption of light from the first light emitting element 41 and the second light emitting element 42 by the protective element 60.

The protective element 60 is typically electrically connected in parallel with the light-emitting elements (here, the first light-emitting element 41 and the second light-emitting element 42). In the example shown in FIG. 3, one of the two terminals of the protective element 60 is connected to the upper surface 21a of the first lead 21 by a wire. The other terminal of the protective element 60 can be electrically connected to the upper surface 22a of the second lead 22 by, for example, solder, conductive paste, a bump, an anisotropic conductive material, or a brazing material such as a low-melting point metal.

[Light-reflective member 50]
As can be seen from FIG. 1 and FIG. 4, the light reflective member 50 is located in the recess 11 of the resin package 10 in a region between the inner wall surface (wall surfaces 31c, 31d, 31e, and 31f) of the recess 11 and the third resin portion 33 of the resin body 30. The light reflective member 50 can be made of a material that has a low transmittance for light from the light emitting element and/or external light, or that does not easily absorb light from the light emitting element and/or external light. For example, the light reflective member 50 can be formed from a resin material in which a light reflective filler is dispersed in a resin as a base material. The light reflective member 50 can be formed in the recess 11 by applying an uncured resin material to the region between the inner wall surface of the bottom surface 11b of the recess 11 and the third resin portion 33 by potting or the like, and then curing the applied resin material.

The light-reflective member 50 is formed between the inner wall surface of the recess 11 and the third resin part 33 surrounding the element mounting region 21R. By forming the light-reflective member 50 in the recess 11 so as to surround the first light-emitting element 41 and the second light-emitting element 42 in a plan view, the light emitted from the first light-emitting element 41 and the second light-emitting element 42 and incident on the light-reflective member 50 can be reflected by the inclined surface 50s toward the opening 11a of the recess 11. In other words, by providing the light-reflective member 50 in the recess 11, the light extraction efficiency of the light-emitting device can be improved.

As shown in FIG. 4, the light reflective member 50 can be formed from the opening 11a of the recess 11 to at least the position of the third resin part 33. As shown in FIG. 4, in a cross-sectional view, the inclination angle formed by the straight line connecting the upper and lower ends of the inclined surface 50s of the light reflective member 50 and the bottom surface 11b of the recess 11 is preferably smaller than the inclination angle formed by the straight line connecting the upper and lower ends of the inner wall surface (e.g., wall surface 31f) of the recess 11 and the bottom surface 11b of the recess 11. If the inclination of the inclined surface 50s is gentler than the inclination of the inner wall surface of the recess 11, the light reflective member 50 can be formed closer to the light emitting element. By forming the light reflective member 50 up to the vicinity of the light emitting element, the light emitted from the first light emitting element 41 and the second light emitting element 42 and incident on the light reflective member 50 can be efficiently reflected toward the opening 11a. It is preferable that the top of the third resin part 33 is lower than the upper surface of the light emitting element. This configuration makes it easier for light from the light-emitting element to be incident on the inclined surface 50s of the light-reflective member 50, so that the light emitted from the light-emitting element can be efficiently emitted to the outside through the opening 11a.

In a cross-sectional view, the shape of the inclined surface 50s, which is the surface of the light-reflective member 50, is not limited to a linear shape. In particular, here, the inclined surface 50s of the light-reflective member 50 has a concave shape recessed toward the first resin part 31 of the resin body 30. By having a concave surface of the light-reflective member 50, it becomes easier to reflect incident light toward the side opposite the bottom surface 11b of the recess 11. In addition, by making the surface of the light-reflective member 50 a concave surface, it becomes easier to form the wavelength conversion member 85 on the light-reflective member 50.

The base material of the light-reflective member 50 may be a thermosetting resin, a thermoplastic resin, or the like. Specific examples of the base material include phenolic resin, epoxy resin, BT resin, polyphthalamide (PPA), silicone resin, and the like. The light-reflective filler dispersed in the base material may be particles of titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, or the like. It is beneficial for the light-reflective member 50 to have a white color. A reflective material that does not easily absorb light from the light-emitting element and has a large refractive index difference with the base material may be dispersed in the resin as the base material.

[Wavelength conversion member 85]
The wavelength conversion member 85 located on the light reflective member 50 contains a base material (first base material) such as resin and phosphor particles dispersed in the base material, absorbs a part of the incident light, and emits light of a wavelength different from the incident light. By forming the wavelength conversion member 85 on the light reflective member 50, it becomes possible to extract, for example, white light by the light emitted from the first light emitting element 41 or the second light emitting element 42 and the light emitted from the wavelength conversion member 85. As the base material of the wavelength conversion member 85, a material selected from silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, urea resin, phenol resin, acrylic resin, urethane resin, or fluororesin, or a resin containing two or more of these resins can be used.

The wavelength conversion member 85 contains one or more phosphors including the first phosphor. The phosphor dispersed in the base material of the wavelength conversion member 85 can be a known material. For example, a phosphor having an emission peak wavelength in a band of more than 525 nm and not more than 535 nm can be applied as the first phosphor. An example of a phosphor having an emission peak wavelength in a band of more than 525 nm and not more than 535 nm is a YAG phosphor called G-YAG (for example, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce ₃ ⁺ ). The YAG phosphor converts blue light into yellow light to yellow-green light. As the first phosphor, a fluoride phosphor such as a KSF phosphor, a nitride phosphor such as CASN, a β-sialon phosphor, or the like may be applied. The KSF phosphor and CASN are examples of phosphors that convert blue light into red light, and the β-sialon phosphor is an example of a phosphor that converts blue light into green light. The first phosphor may be a quantum dot phosphor.

1, the wavelength conversion member 85 may have a shape that, in plan view, continuously surrounds one or more light-emitting elements arranged in the element mounting region 21R. By forming the wavelength conversion member 85 in the recess 11 so as to continuously surround the light-emitting elements in plan view, color unevenness on the upper surface of the sealing member 75, which is the light-emitting surface, can be more effectively suppressed compared to an arrangement in which the wavelength conversion member 85 is dotted in the recess 11.

4, in a typical embodiment of the present disclosure, the wavelength conversion member 85 is separated from the first lead 21. Although not shown in FIG. 4, the wavelength conversion member 85 is also separated from the second lead 22. In other words, the wavelength conversion member 85 does not have a portion in contact with the upper surface 21a of the first lead 21, and does not have a portion in contact with the upper surface 22a of the second lead 22. In the example shown in FIG. 4, the wavelength conversion member 85 does not extend inside the area surrounded by the third resin part 33 of the resin body 30 on the bottom surface 11b of the recess 11. Therefore, in the configuration shown in FIG. 4, the wavelength conversion member 85 is separated from both the first light-emitting element 41 and the second light-emitting element 42. With this configuration, the light-emitting element arranged in the element mounting region 21R is not covered by the wavelength conversion member 85. Therefore, it is possible to suppress the light reflected by the wavelength conversion member 85 from being absorbed by the light-emitting element. This makes it possible to suppress a decrease in the light extraction efficiency of the light-emitting device.

[Sealing member 75]
The sealing member 75 contains at least a second base material such as resin, and covers the first light-emitting element 41, the second light-emitting element 42, the third resin part 33 of the resin body 30, the wavelength conversion member 85, the wire 43, and the like within the recess 11. The sealing member 75 covers the first light-emitting element 41 and the second light-emitting element 42, thereby having the function of protecting them from external forces, dust, moisture, and the like.

The second base material may be the same material as the first base material of the wavelength conversion member 85. It is advantageous to select a material having a transmittance of 60% or more for the light emitted from the light-emitting element as the second base material, and it is more advantageous if the second base material has a transmittance of 90% or more for the light emitted from the light-emitting element. Specific examples of the second base material include silicone resin, epoxy resin, acrylic resin, or a resin material containing one or more of these. The sealing member 75 may be a single layer or may be composed of multiple layers. Particles of titanium oxide, silicon oxide, zirconium oxide, aluminum oxide, etc. may be dispersed in the second base material.

The light emitted from the light emitting element in the element mounting region 21R and traveling toward the inner wall surface of the recess 11 is reflected toward the opening 11a of the recess 11 at the position of the inclined surface 50s of the light reflective member 50. In other words, the interface between the wavelength conversion member 85 and the light reflective member 50 functions as a reflecting surface. From the viewpoint of reducing the total reflection at the interface between the sealing member 75 and the wavelength conversion member 85 and effectively allowing the light to reach the interface between the wavelength conversion member 85 and the light reflective member 50, it is advantageous that there is no substantial difference between the refractive index of the first base material in the wavelength conversion member 85 and the refractive index of the second base material in the sealing member 75. More specifically, when the refractive index of the first base material in the wavelength conversion member 85 is n ₁ and the refractive index of the second base material in the sealing member 75 is n ₂ , it is preferable that the relationship |n ₁ -n ₂ |≦0.05 is established. As a result of reducing total reflection at the interface between the sealing member 75 and the wavelength conversion member 85, it becomes easier for light from the light-emitting element in the element mounting region 21R to be incident on the wavelength conversion member 85. This makes it easier to extract light emitted from the wavelength conversion member 85 by being excited by light from the light-emitting element to the outside of the light-emitting device 100. By selecting a phenyl silicone resin (a resin containing an organic polysiloxane having at least one phenyl group in the molecule) as both the first base material and the second base material, it is possible to satisfy the relationship |n ₁ -n ₂ |≦0.05.

Here, the "refractive index" in this specification means the refractive index at the emission peak wavelength of the light-emitting element placed in the element mounting region 21R. When multiple light-emitting elements are placed in the element mounting region 21R, as in the example shown in Figure 4, the "refractive index" in this specification is interpreted as the refractive index at the emission peak wavelength of any one of those light-emitting elements.

As described above, the interface between the wavelength conversion member 85 and the light reflecting member 50 functions as a reflective surface. Therefore, it is beneficial if the refractive index of the base material (fourth base material) in the light reflecting member 50 is smaller than the refractive index of the first base material in the wavelength conversion member 85. By having the base material in the light reflecting member 50 have a smaller refractive index than the first base material in the wavelength conversion member 85, the light extraction efficiency of the light emitting device 100 can be improved by utilizing total reflection at the interface between the wavelength conversion member 85 and the light reflecting member 50. For example, by selecting a phenyl silicone resin as the first base material in the wavelength conversion member 85 and a dimethyl silicone resin (a resin containing an organic polysiloxane having a D unit in which two methyl groups are bonded to a silicon atom) as the base material in the light reflecting member 50, the effect of improving the brightness of the light emitting device 100 can be expected.

The sealing member 75 may contain one or more phosphors that convert the wavelength of light from the first light-emitting element 41 and/or the second light-emitting element 42. For example, the sealing member 75 may contain a second phosphor in addition to the second base material. It is beneficial to select a phosphor whose emission peak wavelength is located on the longer wavelength side than the first phosphor in the wavelength conversion member 85 as the second phosphor. When the wavelength conversion member 85 contains, for example, G-YAG as the first phosphor, a phosphor having an emission peak wavelength in the band of 515 nm or more and 525 nm or less can be used as the second phosphor dispersed in the sealing member 75. An example of such a phosphor is a LAG-based phosphor (for example, Lu ₃ Al ₅ O ₁₂ :Ce ₃ ).

The emission peak wavelength of the second phosphor in the sealing member 75 is longer than the emission peak wavelength of the first phosphor in the wavelength conversion member 85, which is located farther from the light emitting element than the sealing member 75, so that excitation of the first phosphor in the wavelength conversion member 85 by light from the second phosphor can be avoided. In other words, a decrease in light extraction efficiency due to absorption of light from the second phosphor by the first phosphor can be avoided.

The sealing member 75 may contain another type of phosphor in addition to the second phosphor. For example, the wavelength conversion member 85 may contain G-YAG as the first phosphor, and the sealing member 75 may contain G-YAG as the second phosphor and additionally YAG. However, the overall concentration of the phosphor in the sealing member 75 is lower than the concentration of all phosphors (including the first phosphor) contained in the wavelength conversion member 85. For example, if the wavelength conversion member 85 contains G-YAG as the first phosphor and the sealing member 75 contains YAG and G-YAG as the second phosphor, the overall concentration of YAG and G-YAG in the sealing member 75 is lower than the concentration of G-YAG in the wavelength conversion member 85.

The concentration of the phosphor in the member constituting the light-emitting device can be calculated from an SEM image of a cross section (for example, cross section IV-IV in FIG. 3) when the light-emitting device is cut perpendicularly to the upper surface near the center of the light-emitting device. For example, in the case of the concentration of the phosphor in the sealing member 75, first, an image of the cross section of the light-emitting device is obtained so that the entire light-emitting device is included. Then, the ratio of the area occupied by the phosphor in the sealing member 75 to the entire sealing member 75 in the obtained image can be regarded as the concentration of the phosphor in the sealing member 75. Similarly, for the concentration of the phosphor in the wavelength conversion member 85, the area of the phosphor in the wavelength conversion member 85 shown in the image of the cross section of the light-emitting device is obtained, and the ratio to the area of the entire wavelength conversion member 85 can be calculated. The cross section for calculating the concentration of the phosphor may be either parallel or perpendicular to one side of the rectangular upper surface of the light-emitting device. Alternatively, the concentration of the phosphor in the member may be calculated based on a cross-sectional image when the light-emitting device is cut along the diagonal of the rectangular upper surface.

As will be described later with reference to the examples, according to the inventor's study, the light extraction efficiency can be improved by reducing the concentration of the phosphor in the sealing member 75, which has a portion located closer to the light emitting element compared to the wavelength conversion member 85. The concentration of all phosphors, including the second phosphor, in the sealing member 75 is preferably 0.1 to less than 0.5 times the concentration of all phosphors, including the first phosphor, in the wavelength conversion member 85. It is advantageous from the viewpoint of improving color rendering if the total concentration of phosphors in the sealing member 75 is 0.1 times or more the concentration of phosphors in the wavelength conversion member 85.

As described later, the sealing member 75 can be formed by filling the recess 11 with a material containing a second base material such as a resin and at least a second phosphor by potting or the like after the wavelength conversion member 85 is formed, and then hardening the filled material. At this time, the second phosphor dispersed in the second base material may settle before the material filled in the recess 11 hardens.

Figure 5 is a schematic cross-section of the light-emitting device 100 cut perpendicularly to the upper surface 10a of the resin package 10 at the position of the V-V line shown in Figure 3. Figure 3 is a schematic plan view of the light-emitting device 100 with the sealing member 75, the wavelength conversion member 85, and the light-reflective member 50 removed. As in Figure 4, Figure 5 also illustrates the sealing member 75, the wavelength conversion member 85, and the light-reflective member 50 without omitting these members. Figure 6 is a schematic enlarged view of the first light-emitting element 41 and its surroundings in the YZ cross-section of the light-emitting device 100 shown in Figure 5. Note that in these figures, some elements are omitted to avoid overly complicating the drawings.

5 and 6, the first light-emitting element 41 has a support substrate 411 having a lower surface 411b and a semiconductor laminate structure 412 including one or more semiconductor layers. The support substrate 411 is, for example, a sapphire substrate or a gallium nitride substrate. In the example shown in FIG. 5 and FIG. 6, the first light-emitting element 41 is bonded to the first lead 21 by a bonding member 44 such that the lower surface 411b of the support substrate 411 faces the upper surface 21a of the first lead 21. In this example, the semiconductor laminate structure 412 is formed on the main surface of the support substrate 411 opposite the lower surface 411b. That is, here, the semiconductor laminate structure 412 is located on the opposite side of the support substrate 411 to the first lead 21.

The semiconductor laminate structure 412 includes an active layer, and an n-type semiconductor layer and a p-type semiconductor layer that sandwich the active layer. In the example shown in Figures 5 and 6, p-side and n-side electrodes 414 are provided on the semiconductor laminate structure 412. In this example, the lower surface 411b of the support substrate 411 coincides with the lower surface of the first light-emitting element 41, and therefore the electrodes 414 can be said to be located on the upper surface 41a side opposite the lower surface of the first light-emitting element 41.

As described above, in the process of forming the sealing member 75, the second phosphor dispersed in the second base material may settle before the material filled in the recess 11 hardens. Therefore, the concentration of the second phosphor in the sealing member 75 may have a gradient that decreases from the bottom surface 11b of the recess 11 toward the opening 11a along the Z direction in the figure. In FIG. 6, the shaded circle 75p typically represents the second phosphor in the sealing member 75. In the example shown in FIG. 6, the concentration of the second phosphor at the height of the light-emitting element arranged in the element mounting region 21R, for example, the upper surface 41a of the first light-emitting element 41, is smaller than the concentration of the second phosphor at the height of the lower surface of the first light-emitting element 41 (here, the height of the lower surface 411b of the support substrate 411). In other words, in the configuration illustrated in FIG. 6, the concentration of the second phosphor in the portion of the sealing member 75 that is located between the first light-emitting element 41 and the third resin portion 33 in a cross-sectional view decreases from the position of the upper surface 21a of the first lead 21 toward the position of the upper surface 41a of the first light-emitting element 41.

Figure 7 shows a schematic diagram of another example of the distribution of the second phosphor in the sealing member as a reference example. Figure 7 shows a schematic diagram of an example of the distribution of the second phosphor in the sealing member in a light-emitting device having a configuration in which the formation of the wavelength conversion member 85 on the light-reflective member 50 is omitted. Compared to the example described with reference to Figure 6, in the example shown in Figure 7, more second phosphor 76p is dispersed in the sealing member 76 that covers the first light-emitting element 41.

As described above, when settling of the second phosphor occurs, the concentration of the second phosphor in the portion of the sealing member located near the bottom surface 11b of the recess 11 tends to be high. In the example shown in FIG. 7, a larger amount of the second phosphor 76p is contained in the sealing member 76, and as a result, the second phosphor 76p is located near the bottom surface 11b of the recess 11 so as to cover the side surface located between the upper and lower surfaces of the first light-emitting element 41. If a large amount of phosphor is present near the side surface of the light-emitting element as in this example, some of the light emitted from the side surface of the light-emitting element may be reflected by the phosphor and absorbed by the light-emitting element. In other words, there is room to improve the light extraction efficiency of the light-emitting device by suppressing the light from the light-emitting element from being reflected by the phosphor located near the side surface of the light-emitting element.

In contrast, in the embodiment of the present disclosure, the wavelength conversion member 85 is disposed on the light reflective member 50 formed in the recess 11 so as to surround the light emitting element. Therefore, the concentration of the phosphor in the sealing member 75 can be reduced compared to a configuration in which the wavelength conversion member 85 is not provided on the light reflective member 50. Since the concentration of the phosphor in the sealing member 75 can be reduced compared to a configuration in which the wavelength conversion member 85 is not provided on the light reflective member 50, the accumulation of the phosphor near the side surface of the light emitting element can be suppressed. This can suppress the light emitted from the side surface of the light emitting element, in particular, being reflected by the phosphor in the sealing member 75 and absorbed by the light emitting element. In other words, it is possible to allow more light to reach the inclined surface 50s of the light reflective member 50, and the decrease in light extraction efficiency caused by the accumulation of the phosphor near the side surface of the light emitting element can be suppressed. Note that even if sedimentation does not occur in the phosphor in the sealing member 75, the decrease in the concentration of the phosphor can reduce the light reflected by the phosphor in the sealing member 75 and absorbed by the light emitting element. That is, even if no sedimentation occurs in the phosphor in the sealing member 75, the effect of improving the brightness of the light-emitting device can be expected due to the reduction in the concentration of the phosphor in the sealing member 75. In addition, by disposing the wavelength conversion member 85 in the recess 11 so as to selectively cover the surface of the light-reflective member 50 that functions as a reflective surface, it is possible to reduce the concentration of the phosphor in the sealing member 75 while suppressing the change in the color of the emitted light that accompanies the reduction in the concentration of the phosphor in the sealing member 75.

The concentration of the second phosphor at the height of the upper surface of the light-emitting element placed in the element mounting region 21R and the concentration of the second phosphor at the height of the lower surface of the light-emitting device can be calculated from a cross-sectional image of the light-emitting device cut perpendicularly to the upper surface, similar to the concentration of the phosphor in the member constituting the light-emitting device. First, a square region with a side length of, for example, 1/3 of the height of the light-emitting device (the distance between the upper surface and the lower surface) is assumed in the cross-sectional image of the light-emitting device. Then, in the case of the concentration of the second phosphor at the height of the lower surface of the light-emitting element, the base of this square region is made to coincide with the position of the lower surface of the light-emitting element, and the ratio of the area of the phosphor to the area of the entire region is obtained. The same area ratio can be calculated at multiple locations, and the average value of these can be used as the concentration of the second phosphor at the height of the lower surface of the light-emitting element. In the case of the concentration of the second phosphor at the height of the upper surface of the light-emitting element, the side opposite to the base of the square region is made to coincide with the position of the upper surface of the light-emitting element, and the average value of the area ratio is obtained in the same manner, and this is used as the concentration of the second phosphor at the height of the upper surface of the light-emitting element. The length of one side of the square area used to calculate the concentration of the second phosphor is not limited to 1/3 of the height of the light-emitting device, and other values may be used.

Figure 8 shows a schematic cross-section of a light-emitting device according to another embodiment of the present disclosure. Compared to the light-emitting device 100 described with reference to Figures 4, 5, etc., the light-emitting device 100A shown in Figure 8 further has a covering member 751 located on the upper surface 41a of the first light-emitting element 41. In the configuration illustrated in Figure 8, the sealing member 75 located in the recess 11 of the resin package 10 also covers this covering member 751. Note that Figure 8 also shows a schematic ZX cross-section of the light-emitting device 100A when the light-emitting device 100A is cut perpendicular to the upper surface 10a of the resin package 10 near the center of the light-emitting device 100A, similar to the cross-section shown in Figure 4.

The covering member 751 may contain a third base material and a third phosphor dispersed in the third base material. The covering member 751 can be formed by applying an uncured material containing the third base material and the third phosphor onto the upper surface 41a of the first light-emitting element 41 by potting, and then curing the applied material.

Here, as the third phosphor, a phosphor different from the first phosphor in the wavelength conversion member 85 may be selected. For example, as the third phosphor, a phosphor having a longer emission peak wavelength may be used as compared with the first phosphor in the wavelength conversion member 85. The emission peak wavelength of the third phosphor in the covering member 751 arranged closer to the first light emitting element 41 is located on the longer wavelength side than the emission peak wavelength of the first phosphor in the wavelength conversion member 85, so that excitation of the first phosphor in the wavelength conversion member 85 by light from the third phosphor can be avoided. That is, the light extraction efficiency of the light emitting device 100A can be improved. Thus, in the embodiment of the present disclosure, the phosphor in the member located farther away from the light emitting element may exhibit a shorter emission peak wavelength. When the wavelength conversion member 85 contains, for example, G-YAG as the first phosphor, the covering member 751 may contain, as the third phosphor, a phosphor having an emission peak wavelength in the band of 607 nm or more and 640 nm or less. An example of a phosphor having an emission peak wavelength in the band of 607 nm or more and 640 nm or less is a nitride-based phosphor called SCASN (for example, (Sr,Ca)AlSiN ₃ :Eu ₂ ⁺ ).

Generally, light emitting elements such as LEDs have high light intensity near the optical axis. As shown in the configuration illustrated in FIG. 8, by forming a coating member 751 containing a third phosphor on the upper surface of the light emitting element so as to cover the upper surface of the light emitting element, the intensity on the long wavelength side of the spectrum of the light emitted from the light emitting device 100A can be improved. In other words, the effect of lowering the color temperature can be obtained.

As the third base material, a material similar to the first base material in the wavelength conversion member 85 or the second base material in the sealing member 75 can be applied. However, it is preferable that the relationship of |n 2 -n 3 |≦0.05 is established between the refractive index n ₂ of the second base material in the sealing member 75 and the refractive index n ₃ of the third base material in the covering member 751. _This is because there is _no substantial difference between the refractive index of the second base material in the sealing member 75 and the refractive index of the third base material in the covering member 751, and total reflection at the interface between the sealing member 75 and the covering member 751 can be suppressed, and the light extraction efficiency of the light emitting device can be expected to be improved. As a combination of the second base material and the third base material that satisfies the relationship of |n ₂ -n ₃ |≦0.05, a configuration in which both the second base material and the third base material are made of phenyl silicone resin can be exemplified.

Figure 9 shows a schematic cross-section of a light-emitting device according to yet another embodiment of the present disclosure. When multiple light-emitting elements are arranged in the element mounting region 21R, a covering member may be formed on the upper surfaces of the light-emitting elements. Compared to the light-emitting device 100A shown in Figure 8, the light-emitting device 100B shown in Figure 9 has a covering member 752 located on the upper surface 42a of the second light-emitting element 42 in addition to a covering member 751 located on the upper surface 41a of the first light-emitting element 41. Note that Figure 9, like Figure 8 described above, shows a schematic ZX cross-section of the light-emitting device 100B when cut perpendicularly to the upper surface 10a of the resin package 10 near the center of the light-emitting device 100B.

The covering member 752 on the second light-emitting element 42 may or may not contain a phosphor. For example, if the color temperature of the light extracted to the outside of the resin package 10 is too low when the covering member 751 is simply placed on the first light-emitting element 41, a phosphor such as SCASN may be dispersed in the base material of the covering member 752. In this case, the concentration of the phosphor may be different between the covering member 751 on the first light-emitting element 41 and the covering member 752 on the second light-emitting element 42.

It is not essential that the phosphor in the covering member 751 and the phosphor in the covering member 752 are the same. That is, the phosphor in the covering member 752 may not be the same as the third phosphor in the covering member 751. For example, the covering member 751 may contain a wavelength conversion material such as CASN that converts blue light into red light as the third phosphor, and the covering member 752 may contain a phosphor that converts the incident light into light with a shorter wavelength than red light (yellow light, green light, or blue light). In this case, as in the configuration illustrated in FIG. 9, when the covering member 751 and the covering member 752 are independently formed on the first light-emitting element 41 and the second light-emitting element 42, respectively, the covering member 751 and the covering member 752 are arranged spatially apart. According to such an arrangement of the covering member 751 and the covering member 752, it is possible to suppress the excitation of the third phosphor in the covering member 751 by the light that has been wavelength-converted by the phosphor in the covering member 752. That is, by disposing the covering member 751 and the covering member 752 spatially apart inside the recess 11, it is possible to suppress absorption by the covering member 751 of light with a shorter wavelength than red light, which is generated by wavelength conversion by the phosphor in the covering member 752. Therefore, it becomes easier to extract light with a shorter wavelength than red light emitted from the covering member 752. From the viewpoint of obtaining higher brightness, when multiple light-emitting elements are disposed inside the recess 11 of the resin package 10, it is advantageous to selectively dispose a covering member containing a phosphor on the upper surface of some of the multiple light-emitting elements as in the example of FIG. 8.

The covering member 751 and the covering member 752 can be formed by applying an uncured material to the upper surface of the first light-emitting element 41 and the upper surface of the second light-emitting element 42 by a potting method or the like, and then curing the applied material. The covering member 751 may cover the side surface of the first light-emitting element 41. Similarly, the covering member 752 may cover the side surface of the second light-emitting element 42. The covering member 751 and/or the covering member 752 may be given a light diffusion function by dispersing a material with a refractive index different from that of the base material.

[Exemplary Method for Manufacturing a Light Emitting Device]
An exemplary method for manufacturing a light emitting device according to an embodiment of the present disclosure will be briefly described below. In general, the method for manufacturing a light emitting device includes a step of preparing an aggregate substrate including a lead frame as a part thereof, and a step of singulating the aggregate substrate to obtain a plurality of light emitting devices.

Figures 10 and 11 show a portion of the lead frame of the collective substrate. Figure 10 shows the front side of the lead frame (the side on which the light emitting elements are arranged), and Figure 11 shows the appearance of the lead frame 202 shown in Figure 10 when turned over. Figures 10 and 11 show an area of the lead frame 202 that includes four light emitting structures that will each become a light emitting device after the collective substrate is singulated, and the double-dashed line rectangle in Figure 10 shows a portion that corresponds to one of these light emitting structures 100L. The lead frame 202 can have a base material such as copper and a metal layer that covers the base material.

As shown in Figures 10 and 11, the lead frame 202 has multiple sets, each of which includes a first lead corresponding region 21A and a second lead corresponding region 22A. The first lead corresponding region 21A and the second lead corresponding region 22A are portions of the lead frame 202 that will become the first lead 21 and the second lead 22, respectively, after the collective substrate is singulated. In Figure 10, the approximate position of the element mounting region 21R in the first lead corresponding region 21A is indicated by a dotted line. These multiple sets, each of which includes the first lead corresponding region 21A and the second lead corresponding region 22A, are connected to each other by connecting portions 24, and together form the lead frame 202. These connecting portions 24 become the extension portions 21s and 22h described above after the collective substrate is singulated (see Figures 1 and 2).

The shapes of the first lead corresponding region 21A, the second lead corresponding region 22A and the connecting portion 24 can be obtained, for example, by punching out a plate-like member into a predetermined shape using a die. The first lead corresponding region 21A may be partially etched, for example, to form a groove portion 21g surrounding part of the periphery of the element mounting region 21R on its upper surface 21a. In this example, a groove portion 21h is also formed on the upper surface 21a of each first lead corresponding region 21A. An arc-shaped groove portion 22g is also formed on the upper surface 22a of each second lead corresponding region 22A. All or part of the groove portions 21g, 21h and 22g may be formed by press processing.

In the configuration illustrated in FIG. 11, the lower surface 21b of the first lead corresponding region 21A has a side edge groove 21k formed along three sides of the rectangle. The side edge groove 21k is recessed from the lower surface 21b of the first lead corresponding region 21A toward the upper surface 21a. Similarly, in the configuration illustrated in FIG. 11, the lower surface 22b of the second lead corresponding region 22A has a side edge groove 22k formed along three sides of the rectangle. The side edge groove 22k is recessed from the lower surface 22b of the second lead corresponding region 22A toward the upper surface 22a. The side edge grooves 21k and 22k can be formed by etching, pressing, or the like.

The above-mentioned assembly substrate can be obtained, for example, by obtaining a lead frame with a resin molded body in which a resin body 30 is formed on a lead frame 202, arranging a first light emitting element 41, a second light emitting element 42, a wire 43, etc. on the lead frame with a resin molded body, and further forming a light reflective member 50, a wavelength conversion member 85, and a sealing member 75. The lead frame with a resin molded body can be formed, for example, by sandwiching the lead frame 202 in a mold having an upper mold and a lower mold, and pouring a resin material into the space within the mold. For example, a resin body 30 having a shape corresponding to the shape of a cavity formed between the upper mold and the upper surface of the lead frame 202 can be obtained by a transfer molding method.

The base material of the resin body 30 may be a thermosetting resin, a thermoplastic resin, or the like. Examples of the base material of the resin body 30 include epoxy resin, silicone resin, modified epoxy resin such as silicone modified epoxy resin, modified silicone resin such as epoxy modified silicone resin, unsaturated polyester resin, saturated polyester resin, polyimide resin, modified polyimide resin, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, or other resin. In particular, the use of thermosetting resins such as epoxy resin and modified silicone resin is advantageous in that the first resin portion 31, the second resin portion 32, the third resin portion 33, and the fourth resin portion 34 can be integrally formed from the same resin material. A light-reflective filler such as titanium oxide particles may be dispersed in the base material of the resin body 30.

After the resin body 30 material is filled into the mold, the resin body 30 material is temporarily cured. The lead frame 202 with the temporarily cured resin material attached is then removed from the mold, and the resin material is permanently cured at a temperature higher than that of the temporary curing. This results in a lead frame with a resin molded body in which the resin body 30 is formed on the lead frame 202.

Figure 12 shows the portions of the lead frame with the resin molded body that correspond to the four light emitting structures 100L shown in Figure 10. As shown in Figure 12, the grooves 21g provided on the upper surface 21a of the first lead corresponding region 21A and the grooves 22g provided on the upper surface 22a of the second lead corresponding region 22A are filled with the material of the resin body 30. In this example, the material of the resin body 30 is located on both the upper and lower surfaces of the lead frame 202, and the first resin part 31, the second resin part 32, the third resin part 33 and the fourth resin part 34 are integrally formed from a common material. Therefore, peeling between the lead frame 202 and the resin body 30 is unlikely to occur.

Next, the first light-emitting element 41 and the second light-emitting element 42 are placed in the element placement area 21R using the bonding member 44. Furthermore, one of the positive and negative electrodes of the first light-emitting element 41 and the second light-emitting element 42 is electrically connected to the first lead corresponding area 21A using the wire 43, and the other of the positive and negative electrodes is electrically connected to the wire connection area 22R of the second lead corresponding area 22A (see FIG. 3). If necessary, a protective element 60 is placed in the recess 11.

As described above, one light-emitting element may be disposed in the element mounting region 21R. In this case, as illustrated in FIG. 13, for example, the first light-emitting element 41 may be disposed between two grooves 21h provided on the upper surface 21a of the first lead corresponding region 21A.

Next, a light-reflecting member 50 is formed inside each of the multiple recesses 11 formed in the lead frame with the resin molded body. For example, first, an uncured material is applied between the inner wall surface of each recess 11 and the third resin part 33 by potting or the like. In this embodiment, the third resin part 33 is arranged in a ring shape around the element mounting area 21R, so that even if the uncured resin material moves within the recess 11, the flow of the resin material toward the center of the element mounting area 21R can be blocked by the third resin part 33. Therefore, the position of the inner edge of the uncured resin material can be defined by the third resin part 33, and the uncured resin material for forming the light-reflecting member 50 can be appropriately arranged on the bottom surface 11b of the recess 11. After that, the uncured resin material applied to a predetermined area in the recess 11 is cured by heat, light, or the like.

As described with reference to FIG. 4 etc., the light reflective member 50 is basically located between the inner wall surface of the recess 11 and the third resin part 33. The light reflective member 50 may cover at least a part of the third resin part 33 of the resin body 30. As shown in FIG. 14, the light reflective member 50 may cover the part of the third resin part 33 that is the farthest from the bottom surface 11b of the recess 11 (i.e., the top). By having the light reflective member 50 cover the top of the third resin part 33, the area in contact with the resin body 30, which is part of the resin package 10, is increased, and the bond between these parts can be made stronger.

As long as the side surfaces of the first light-emitting element 41 and the second light-emitting element 42 are not directly covered, it is acceptable for a part of the light-reflective member 50 to be located within the element mounting region 21R. In this case, it is preferable that the light-reflective member 50 is separated from at least a part of the side surface of the light-emitting element, and it is more preferable that the light-reflective member 50 is separated from the entire side surface of the light-emitting element. By separating at least a part of the side surface of the light-emitting element from the side surface of the light-emitting element, it is possible to prevent the light emitted from the side surface of the first light-emitting element 41 or the light emitted from the side surface of the second light-emitting element 42 from being reflected by the light-reflective member 50 and absorbed by the first light-emitting element 41 or the second light-emitting element 42.

Figure 15 shows another example of the shape of the light reflective member located in the recess 11. In the example shown in Figure 15, one first light emitting element 41 is arranged in the element mounting area 21R, similar to the example shown in Figure 13. In the configuration shown in Figure 15, the light reflective member 50A located in the recess 11 includes a portion that is located in the element mounting area 21R beyond the third resin portion 33 of the resin body 30. In this example, a portion of the light reflective member 50A reaches close to the first light emitting element 41. However, the side surface of the first light emitting element 41 is not covered by the light reflective member 50A.

15, the light reflective member 50A can be provided up to the vicinity of the first light emitting element 41 by forming the light reflective member 50A so as to cover at least a part of the element mounting region 21R of the bottom surface 11b of the recess 11. At this time, by forming the light reflective member 50A so as not to directly cover the side surface of the light emitting element (here, the first light emitting element 41), it is possible to suppress the light emitted to the side of the light emitting element from being reflected by the light reflective member 50A and being absorbed by the light emitting element. In particular, according to a configuration in which a plurality of grooves 21h are provided in the first lead corresponding region 21A and a single light emitting element is disposed between these grooves 21h, the position of the inner edge of the light reflective member 50A can be defined by the plurality of grooves 21h. In other words, by providing the grooves 21h on the bottom surface 11b of the recess 11, it is possible to avoid the side surface of the first light emitting element 41 being directly covered by the light reflective member 50A while positioning a part of the light reflective member 50A within the element mounting region 21R. In this example, by positioning a portion of the light-reflective member 50A within the element mounting region 21R, the area of the recess 11 that is covered by the light-reflective member 50 can be expanded, which may result in further improved brightness.

It is beneficial if the reflectance of the light-reflective member 50 for the light emitted from the light-emitting element (the first light-emitting element 41 or the second light-emitting element 42) is higher than the reflectance of the resin body 30. For example, the content of the light-reflective filler, such as titanium oxide, dispersed in the light-reflective member 50 is greater than the content of the light-reflective filler dispersed in the resin body 30. The content of the reflective material in the light-reflective member 50 is preferably 1.5 times or more, more preferably 2 times or more, and even more preferably 2.5 times or more, of the content of the light-reflective substance in the resin body 30. For example, the proportion of titanium oxide in the uncured resin material for forming the resin body 30 may be 15% by weight or more and 20% by weight or less. In this case, the proportion of titanium oxide in the uncured resin material for forming the light-reflective member 50 may be 30% by weight or more and 60% by weight or less.

Figure 16 shows an example of a light-reflective member having a layered structure. In the configuration illustrated in Figure 16, the light-reflective member 50B located in the recess 11 includes a first light-reflective member 51 and a second light-reflective member 52 located on the first light-reflective member 51. As in this example, the light-reflective member may have a layered structure including two or more light-reflective layers.

Forming the first light-reflective member 51 in a predetermined area of the bottom surface 11b of the recess 11 and then forming the second light-reflective member 52 on the first light-reflective member 51 makes it easier to control the surface shape of the light-reflective member 50B, i.e., the shape of the inclined surface 50s. The first light-reflective member 51 may be entirely covered by the second light-reflective member 52, or may have a portion exposed from the second light-reflective member 52.

The material of the first light-reflective member 51 and the material of the second light-reflective member 52 may be the same or different. For example, the concentration of the light-reflective filler may be different between the material of the first light-reflective member 51 and the material of the second light-reflective member 52. In this case, if the concentration of the light-reflective filler in the first light-reflective member 51 is lower than that of the second light-reflective member 52, the viscosity of the material of the first light-reflective member 51 in an uncured state is lower, which is advantageous because it makes it easier to form the first light-reflective member 51. In addition, since the concentration of the light-reflective filler in the second light-reflective member 52 is relatively high, the reflectance of the second light-reflective member 52 is improved, and the light extraction efficiency can be increased.

The concentration of the light-reflective filler in the first light-reflective member 51 is preferably at least 3% lower by weight, and more preferably at least 5% lower, than the concentration of the light-reflective filler in the second light-reflective member 52. The difference in filler concentration between the first light-reflective member 51 and the second light-reflective member 52 is preferably within 30% by weight, and more preferably within 10%. By keeping the difference in filler concentration within 30%, it is possible to prevent the reflectance of the first light-reflective member 51 from becoming extremely low.

3, 14, 16, etc., the groove 21h of the first lead corresponding region 21A is formed at a position overlapping the first light emitting element 41 or the second light emitting element 42. However, the arrangement of the groove 21h is not limited to this example, and may be, for example, between the first light emitting element 41 or the second light emitting element 42 and the third resin part 33. According to such a configuration, the groove 21h can function to prevent the resin material from approaching the first light emitting element 41 or the second light emitting element 42 further when the uncured resin material for forming the light reflective member 50 overcomes the third resin part 33 and enters the element mounting region 21R. Also, in these examples, the groove 21h extends approximately parallel to the first direction (Y direction in FIG. 12) in which the first lead corresponding region 21A and the second lead corresponding region 22A are alternately arranged, but one or more grooves 21h may be formed to extend in a direction intersecting the first direction as exemplified in FIG. 17. Even with this arrangement of the groove portion 21h, if the uncured resin material overcomes the third resin portion 33, the groove portion 21h can function to prevent the uncured resin material from approaching further toward the first light-emitting element 41 or the second light-emitting element 42.

After the light-reflective member 50 is formed, an uncured material containing a first base material and one or more phosphors including a first phosphor is applied to the surface of the light-reflective member 50 by potting or the like. The material applied to the surface of the light-reflective member 50 is then cured to form the wavelength conversion member 85.

After the wavelength conversion member 85 is formed, the sealing member 75 located in the recess 11 is formed. Here, the recess 11 is filled with an uncured material containing the second base material by potting or the like, and the filled material is cured. As described above, the material of the sealing member 75 may contain one or more phosphors including at least the second phosphor in addition to the second base material. By curing the material filled in the recess 11, the sealing member 75 that covers at least the first light-emitting element 41 and the second light-emitting element 42 and the third resin part 33 can be formed. By forming the sealing member 75, an aggregate substrate having a plurality of light-emitting structures 100L is obtained. If necessary, after the light-emitting elements are placed in the element mounting region 21R, the formation of the covering members 751, 752, etc. may be performed before the sealing member 75 is formed.

Next, the collective substrate is cut at a position between two adjacent light emitting structures 100L using a lead cut mold, a dicing saw, laser light, or the like, to separate the collective substrate. Typically, in the process of separating the collective substrate, the lead frame 202 and the resin body 30 are cut together. Through the above process, the light emitting device 100 shown in FIG. 1 is obtained.

Following the steps below, multiple light-emitting devices were fabricated as samples of Example 1, and multiple light-emitting devices were fabricated as samples of Reference Example 1, and a comparison of the spectrum and total luminous flux was made between Example 1 and Reference Example 1.

Example 1
According to the above-mentioned process, a plurality of light emitting devices each having a structure generally similar to that of the light emitting device 100A shown in Fig. 8 were manufactured. However, in this case, a lead frame having a structure similar to that of the lead frame 202 shown in Fig. 10 and Fig. 11 was prepared, and one light emitting element was placed in each element mounting region 21R at a position between two grooves 21h. A covering member was formed on the upper surface of each of the light emitting elements. A resin material in which titanium oxide particles are dispersed in silicone resin was used as the material for forming the resin body of the lead frame with resin molding.

After arranging the light emitting element, wires, etc. on the bottom surface of each recess of the lead frame with the resin molded body, the light reflective member and the wavelength conversion member were formed in sequence according to the procedure described above. The light reflective member was made of a resin material containing dimethyl silicone resin as a base material and titanium oxide particles as a light reflective filler.

Here, phenyl silicone resin was used as the first base material for forming the wavelength conversion member. G-YAG particles as the first phosphor and silicon dioxide particles as the filler were dispersed in the first base material. Here, the material of the wavelength conversion member was prepared so that the mass of the first phosphor was 100 and the mass of the filler was 0.8 when the mass of the first base material was 100. In this case, the mass ratio of the first phosphor to the entire material of the wavelength conversion member was calculated as 100/(100+100+0.8)*100=50(%) (where "*" represents multiplication). In the following, for convenience of explanation, the mass ratio of the entire phosphor, calculated by assuming the content of the resin as the base material to be 100, is referred to as the "concentration of the phosphor".

Here, a resin material containing a third base material, a third phosphor, and silicon dioxide particles as a filler was used as the material for the covering member covering the top surface of each LED chip. Phenyl silicone resin was used for the third base material, and SCASN particles as the third phosphor were dispersed in the third base material. At this time, the material for the covering member was prepared so that the mass of the third phosphor was 67.2 and the mass of the filler was 15.4 when the mass of the third base material was taken as 100. Therefore, the concentration of the phosphor in the covering member of each sample of Example 1 was approximately 37%.

The material of the sealing member that covers the LED chip and the covering member was a resin material containing phenyl silicone resin as the second base material, LAG particles as the second phosphor, and a filler. Here, in addition to the LAG particles as the second phosphor, G-YAG particles were also dispersed in the second base material. At this time, the material of the sealing member was prepared so that the mass of all the phosphors (G-YAG and LAG as the second phosphor) was 13.8 and the mass of the filler was 15.4 when the mass of the second base material was taken as 100. Therefore, the concentration of the phosphor in the sealing member of each sample of Example 1 was approximately 11%. By the above procedure, a total of 28 light-emitting devices were prepared as samples of Example 1.

(Reference Example 1)
A plurality of light emitting devices were prepared by a procedure similar to that of the sample of Example 1. However, here, the wavelength conversion member was not formed on the light reflective member. In the formation of the covering member, the mass of the third phosphor was 68.0 when the mass of the third base material was 100. However, the concentration of the phosphor in the covering member of each sample of Reference Example 1 was approximately 37%, and it can be said that there is no substantial difference from the concentration of the phosphor in the covering member of each sample of Example 1. In the formation of the sealing member, the material of the sealing member was prepared so that the total mass of G-YAG and LAG as the second phosphor was 26.8 and the mass of the filler was 15.4 when the mass of the second base material was 100. Therefore, the concentration of the phosphor in the sealing member of each sample of Reference Example 1 was approximately 27%. Through the above procedure, a total of 20 light emitting devices were prepared as samples of Reference Example 1.

(Spectral comparison)
The spectra of the sample of Example 1 and the sample of Reference Example 1 when lit were measured, and the obtained spectra were compared. FIG. 18 shows the measurement results of the spectrum of the sample of Example 1, and FIG. 19 shows the measurement results of the spectrum of the sample of Reference Example 1. FIG. 18 is a graph in which 19 light-emitting devices were randomly selected from 28 light-emitting devices, the total luminous flux of each of the 19 light-emitting devices was measured, and the average value of the measured values for each wavelength was plotted. The horizontal and vertical axes in FIG. 18 respectively represent the wavelength and the normalized total luminous flux. Here, the emission spectrum was measured by total luminous flux measurement using an integrating sphere according to a method conforming to JIS-C-8152:2014. FIG. 19 is also a graph in which the total luminous flux of each of the 20 light-emitting devices of Reference Example 1 was measured, and the average value of the measured values for each wavelength was plotted.

Figure 20 is a diagram that shows the spectrum measurement results for the sample of Example 1 and the spectrum measurement results for the sample of Reference Example 1 in one diagram. In Figure 20, the black circle plot indicates the spectrum measurement results for the sample of Example 1. On the other hand, the spectrum measurement results for the sample of Reference Example 1 are shown in Figure 20 as a solid curved graph. As can be seen from Figure 20, no significant difference was confirmed between the sample of Example 1 and the sample of Reference Example 1. In other words, it was found that the spectrum can be said to be substantially the same between the sample of Example 1 and the sample of Reference Example 1. In other words, it was found that even if the content of the phosphor in the sealing member covering the first light-emitting element is reduced, a similar spectrum can be reproduced by arranging a wavelength conversion member on the light-reflective member surrounding the first light-emitting element.

(Comparison of total luminous flux)
Next, the total luminous flux of each sample of Example 1 and each sample of Reference Example 1 was measured according to a method in accordance with JIS C 8152-1:2014. The total luminous flux of each sample of Example 1 was measured, and the average value of the results was found to be 36.7 lm. The input current and input voltage to each sample when measuring the total luminous flux were approximately 65 mA and 2.86 V, respectively.

Next, the total luminous flux was measured for each sample of Reference Example 1 in the same manner as for each sample of Example 1. The average value of the total luminous flux measurement results was 36.9 lm. Figure 21 shows the total luminous flux measurement results for Example 1 and Reference Example 1 together in a single figure. It was found that a greater total luminous flux was obtained in Example 1 compared to Reference Example 1.

According to an embodiment of the present disclosure, a wavelength conversion member is disposed on a light reflective member that surrounds one or more light emitting elements located in the element mounting region. This makes it possible to reduce the concentration of phosphor in the sealing member without causing a substantial difference in the spectrum compared to a configuration that does not have a wavelength conversion member on the light reflective member. This makes it possible to avoid deposition of phosphor near the side surface of the light emitting element, and makes it possible to increase the total luminous flux compared to a configuration that does not have a wavelength conversion member on the light reflective member.

The light-emitting device according to the embodiment of the present disclosure is useful as a light source for various lighting fixtures, a light source for backlights of liquid crystal displays and the like, a light source for various display devices such as advertising or destination guidance, and a light source for projectors. The embodiment of the present disclosure can also be advantageously applied to scanners of facsimiles, copy machines, and the like.

REFERENCE SIGNS LIST 10 Resin package 11 Recess of resin package 21 First lead 21R Element mounting area 22 Second lead 22A Area corresponding to second lead 30 Resin body 31 First resin portion of resin body 32 Second resin portion of resin body 33 Third resin portion of resin body 41 First light emitting element 42 Second light emitting element 50, 50A, 50B Light reflective member 51 First light reflective member 52 Second light reflective member 75, 76 Sealing member 85 Wavelength conversion member 100, 100A, 100B Light emitting device 202 Lead frame 751, 752 Covering member

Claims (15)

a resin package having a plurality of leads including a first lead and a second lead, and a resin body including a first resin portion, a second resin portion and a third resin portion, the resin package having a recess formed by the plurality of leads, the first resin portion and the second resin portion;
At least one light emitting element;
A light reflective member;
a wavelength conversion member containing a first base material and a first phosphor;
a sealing member containing a second base material;
the first resin portion constitutes an outer surface of the resin package,
the second resin portion is located between the first lead and the second lead,
a portion of an upper surface of the plurality of leads is located on a bottom surface of the recess;
the first lead has an element mounting region located on the bottom surface of the recess,
the third resin portion is located above the bottom surface of the recess and surrounds the element mounting region in an annular shape;
the at least one light emitting element is disposed in the element mounting region,
the light reflective member is located within the recess of the resin package between an inner wall surface of the recess and the third resin portion, and covers a portion of the third resin portion that is farthest from the bottom surface of the recess in a direction perpendicular to the bottom surface,
the wavelength conversion member is located on the light reflective member,
The light emitting device, wherein the sealing member covers the at least one light emitting element and the wavelength conversion member in the recess of the resin package. The light emitting device according to claim 1 , wherein the sealing member contains at least a second phosphor. The light emitting device according to claim 2 , wherein the emission peak wavelength of the second phosphor is longer than the emission peak wavelength of the first phosphor. The light emitting device according to claim 2 , wherein the concentration of all phosphors in the sealing member is lower than the concentration of all phosphors in the wavelength conversion member. The light emitting device according to claim 4 , wherein the concentration of all phosphors in the sealing member is 0.1 to less than 0.5 times the concentration of all phosphors in the wavelength conversion member. The at least one light emitting element includes a first light emitting element having an upper surface and a lower surface;
the first light emitting element has a support substrate and a semiconductor layer located on the support substrate and on an opposite side of the support substrate from the first lead;
The light emitting device according to claim 2 , wherein a concentration of the second phosphor at the height of the upper surface of the first light emitting element is smaller than a concentration of the second phosphor at the height of the lower surface of the first light emitting element. a covering member located on the upper surface of the first light emitting element,
the sealing member covers the covering member in the recess of the resin package,
The coating member contains a third base material and a third phosphor,
The light emitting device according to claim 6 , wherein the third phosphor has a peak emission wavelength longer than a peak emission wavelength of the first phosphor. 8. The light emitting device according to claim 7, wherein the second base material and the third base material satisfy a relationship of |n ₂ -n ₃ |≦0.05, where n ₂ is a refractive index of the second base material and n ₃ is a refractive index of the third base material. The light emitting device according to any one of claims 1 to 8, wherein the first base material and the second base material satisfy a relationship of |n ₁ -n ₂ |≦ _0.05 , where n ₁ is a refractive index of the first base material and n 2 is a refractive index of the second base material. The light emitting device according to claim 1 , wherein the light reflective member contains a fourth base material having a refractive index smaller than that of the first base material. The light emitting device according to claim 1 , wherein the wavelength converting member is spaced apart from the light emitting element. The light emitting device according to claim 1 , wherein the wavelength converting member is spaced apart from the leads. The light emitting device according to claim 1 , wherein the wavelength conversion member has a shape that continuously surrounds the light emitting element in a plan view. The light emitting device according to claim 1 , wherein the wavelength conversion member covers at least a portion of the third resin portion of the resin body. The light emitting device according to claim 1 , wherein a surface of the light reflective member has a concave shape recessed toward the first resin portion of the resin body.

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