JP2021106184A - Light-emitting device - Google Patents

Abstract

To take light from a light-emitting element out of a resin package more efficiently.SOLUTION: A light-emitting device comprises: a resin package having a recessed part 11; at least one light-emitting element 41; a light-reflective member 50; a wavelength conversion member 85 containing a first base material and a first phosphor; and a sealing member 75 containing a second base material. The resin package 10 has: a plurality of leads including a first lead 21 and a second lead 22; and a resin body 30 including a first resin part 31, a second resin part 32, and a third resin part 33 surrounding an element placement area of the first lead. Some of upper surfaces of the plurality of leads are located on a bottom surface 11b of the recessed part. The light-emitting element is disposed in the element placement area. The light reflective member is located between an inner wall surface of the recessed part and the third resin part. The wavelength conversion member is located on the light reflective member, and the sealing member covers the light-emitting element and the wavelength conversion member in the recessed part.SELECTED DRAWING: Figure 4

Description

The present disclosure relates to a light emitting device.

There is known a light emitting device in which a light emitting element is arranged in a recess of a package provided with a recess and the light emitting element is sealed with a resin material. For example, Patent Document 1 below discloses a light emitting device including a substrate, a light emitting element supported by the substrate, and a reflecting member having an inner peripheral surface formed so as to surround the light emitting element. The inner peripheral surface of the reflecting member has a function as a light reflecting surface, and reflects the light emitted from the light emitting element toward the upper side of the light emitting element. In the light emitting device described in Patent Document 1, the inner peripheral surface of the reflecting member is covered with a wavelength conversion layer.

Japanese Unexamined Patent Publication No. 2006-066657

In the field of light emitting devices, there is a demand for improved brightness.

A light emitting device according to an embodiment of the present disclosure is a resin package having a plurality of leads including a first lead and a second lead, and a resin body including a first resin portion, a second resin portion, and a third resin portion. A resin package having a recess formed by the plurality of leads, the first resin portion and the second resin portion, at least one light emitting element, a light reflecting member, a first base material, and a first fluorescence. A wavelength conversion member containing a body and a sealing member containing a second base material are provided, the first resin portion constitutes an outer surface of the resin package, and the second resin portion is the first resin portion. An element mounting area located between the lead and the second lead, a part of the upper surface of the plurality of leads is located on the bottom surface of the recess, and the first lead is located on the bottom surface of the recess. The third resin portion is located above the bottom surface of the recess and surrounds the element mounting region in an annular shape, and the at least one light emitting element is arranged in the element mounting region. The light-reflecting member is located between the inner wall surface of the recess and the third resin portion in the recess of the resin package, and the wavelength conversion member is placed on the light-reflecting member. Positioned, the sealing member covers the at least one light emitting element and the wavelength conversion member in the recess of the resin package.

According to the embodiment of the present disclosure, it is possible to provide a light emitting device having improved brightness.

It is a perspective view which shows typically an example of the appearance when the light emitting device by embodiment of this disclosure is seen from the upper surface side. FIG. 5 is a perspective view schematically showing an example of the appearance of the light emitting device 100 shown in FIG. 1 when viewed from the lower surface side. A plan view schematically showing an example of the appearance of the structure obtained by removing the sealing member 75, the wavelength conversion member 85, and the light reflecting member 50 from the light emitting device 100 when viewed from the normal direction of the upper surface 10a of the resin package 10. be. FIG. 3 is a diagram showing a schematic cross section when the light emitting device 100 is cut perpendicularly to the upper surface 10a of the resin package 10 at the position of the IV-IV line shown in FIG. FIG. 5 is a schematic view showing a cross section when the light emitting device 100 is cut perpendicularly to the upper surface 10a of the resin package 10 at the position of the VV line shown in FIG. It is a figure which enlarges and schematically shows the 1st light emitting element 41 and its periphery in the YZ cross section of the light emitting device 100 shown in FIG. It is a figure which shows typically the example of the distribution of the 2nd phosphor in the sealing member 76 covering the 1st light emitting element 41 as a reference example. It is a figure which shows the schematic cross section of the light emitting device by another embodiment of this disclosure. It is a figure which shows the schematic cross section of the light emitting device by still another embodiment of this disclosure. It is a top view which shows schematicly by taking out a part of the lead frame from the assembly board. It is a figure which shows by taking out a part of the lead frame, and is the top view which shows typically the surface opposite to the surface shown in FIG. It is a top view which shows typically the part corresponding to four light emitting structures 100L shown in FIG. 10 out of the lead frame with a resin molded body. It is a schematic plan view which shows the example which arranges one light emitting element in the element mounting area 21R. It is a schematic cross-sectional view which shows the example which formed the light-reflecting member 50 so as to cover the top of the 3rd resin part 33. FIG. 5 is a schematic cross-sectional view showing another example of the shape of the light reflecting member located in the recess 11. It is a schematic cross-sectional view which shows the example of the light reflective member which has a laminated structure. It is a schematic plan view for demonstrating another example of arrangement of the groove part 21h provided in the 1st lead corresponding area 21A. It is a graph which shows the measurement result of the spectrum about the sample of Example 1. It is a graph which shows the measurement result of the spectrum about the sample of Reference Example 1. It is a figure which draws together the measurement result of the spectrum about the sample of Example 1 and the measurement result of the spectrum about the sample of Reference Example 1. It is a figure which shows the measurement result of the total luminous flux about Example 1 and the measurement result of the total luminous flux about Reference Example 1 together.

Hereinafter, the light emitting device of the present disclosure will be described in detail with reference to the drawings. The following embodiments are examples, and the configuration of the light emitting device according to the present disclosure is not limited to the following embodiments. In the following description, terms indicating a specific direction or position (for example, "top", "bottom" and other terms including those terms) may be used. These terms are used only for clarity of relative orientation or position in the referenced drawings. The size, positional relationship, etc. of the components shown in the drawings may be exaggerated for the sake of clarity, and may not reflect the size and positional relationship of the components in the actual light emitting device. In addition, in order to avoid excessive complexity, some elements may be omitted in the drawings.

[Light emitting device 100]
1 and 2 show an exemplary appearance of a light emitting device according to an embodiment of the present disclosure. FIG. 1 schematically shows an example of the appearance of the light emitting device according to the embodiment of the present disclosure when viewed from the upper surface side, and FIG. 2 shows an example of the appearance of the light emitting device shown in FIG. 1 when viewed from the lower surface side. Is schematically shown. For convenience of explanation, arrows indicating the X, Y, and Z directions perpendicular to each other are also shown in FIGS. 1 and 2. Arrows pointing in these directions may also be shown in other drawings of the present disclosure.

The light emitting device 100 shown in FIG. 1 includes a resin package 10 having a recess 11, at least one light emitting element, and a sealing member 75 that covers the light emitting element. The resin package 10 is a housing of the light emitting device 100, and has a resin body 30 including a first resin portion 31, a second resin portion 32, and a third resin portion 33, and a plurality of leads that support the light emitting element. In the configuration illustrated in FIG. 1, the light emitting device 100 includes two light emitting elements 41 and 42. Hereinafter, the light emitting elements 41 and 42 will be referred to as a first light emitting element 41 and a second light emitting element 42, respectively. The first light emitting element 41 and the second light emitting element 42 are located in the recess 11 of the resin package 10.

The recess 11 is filled with a sealing member 75. The surface of the sealing member 75 constitutes the upper surface of the light emitting device 100 together with the upper surface 10a of the resin package 10. The sealing member 75 has translucency, and in FIG. 1, the sealing member 75 is drawn as a transparent member in order to show the internal structure of the recess 11. In other drawings of the present disclosure, the sealing member 75 may be shown as a transparent member as in FIG. As will be described later, the sealing member 75 may contain fluorescent material particles. It should be noted that the term "translucent" in the present specification is interpreted to include exhibiting diffusivity with respect to incident light, and is not limited to "transparent".

As shown in FIG. 1, a wavelength conversion member 85 and a third resin portion 33 of the resin body 30 of the resin package 10 are arranged inside the recess 11. In this example, the third resin portion 33 of the resin body 30 surrounds the first light emitting element 41 and the second light emitting element 42 in an annular shape. Further, in this example, the wavelength conversion member 85 is also formed inside the recess 11 so as to surround the first light emitting element 41 and the second light emitting element 42 in an annular shape. In FIG. 1, for the sake of clarity, the portion of the structure located inside the recess 11 corresponding to the wavelength conversion member 85 is shaded.

As will be described in detail later with reference to the drawings, the wavelength conversion member 85 is located on the light-reflecting member provided inside the recess 11 of the resin package 10. In a typical embodiment of the present disclosure, the light-reflecting member is located between the inner wall surface of the recess 11 and the third resin portion 33, and is formed so as to surround the first light emitting element 41 and the second light emitting element 42. Will be done. By arranging the wavelength conversion member 85 on the light-reflecting member in the recess 11, at least a part of the light from the first light emitting element 41 and the second light emitting element 42 can be incident on the wavelength conversion member 85. Further, the light wavelength-converted by the wavelength conversion member 85 can be taken out to the outside of the resin package 10 by utilizing the reflection at the interface between the wavelength conversion member 85 and the light-reflecting member. Therefore, for example, it is possible to reduce the concentration of the fluorescent substance in the sealing member 75 or to prevent the sealing member 75 from containing the fluorescent substance. As a result, the light extraction efficiency is improved and the brightness of the light emitting device is increased. Further, as will be described later with reference to Examples, according to such a configuration, while reducing the concentration of the phosphor in the sealing member 75, the spectrum is modulated as the concentration of the phosphor decreases. That is, it is possible to suppress the change in color.

Hereinafter, each component will be described in detail.

[Resin package 10]
The resin package 10 has an upper surface 10a and a lower surface 10b located on the opposite side of the upper surface 10a. In the configurations illustrated in FIGS. 1 and 2, the resin package 10 has a substantially quadrangular outer shape when viewed from above. In FIG. 1, one side of the square shape of the upper surface 10a of the resin package 10 coincides with the X direction or the Y direction shown in FIG.

The resin package 10 includes four outer surfaces 10c, 10d, 10e and 10f. The outer side surface 10d is located on the opposite side of the outer surface 10c, and the outer side surface 10f is located on the opposite side of the outer surface 10e. The first resin portion 31 described above is a portion of the resin body 30 that constitutes these outer surfaces 10c, 10d, 10e, and 10f of the resin package 10. The outer shape of the resin package 10 in the top view is not limited to the square shape, and may have other shapes. In this example, the opening 11a of the recess 11 located on the upper surface 10a of the resin package 10 has a substantially quadrangular shape.

In addition to the resin body 30, the resin package 10 includes a plurality of leads integrally formed with the resin body 30. Here, the plurality of leads of the resin package 10 include a first lead 21 and a second lead 22 arranged so as to be spaced apart from each other, as shown in FIG. A second resin portion 32, which is a part of the resin body 30, is located between the first lead 21 and the second lead 22, whereby the first lead 21 and the second lead 22 are electrically connected to each other. It is insulated.

As shown in FIG. 2, a part of the lower surface 21b of the first lead 21 and a part of the lower surface 22b of the second lead 22 are exposed from the resin body 30 of the resin package 10. The exposed portion of the lower surface 21b of the first lead 21 on the lower surface 10b of the resin package 10 and the exposed portion of the lower surface 22b of the second lead 22 on the lower surface 10b of the resin package 10 are located on the same plane. do. The “same plane” in the present specification also includes an arrangement relationship such that there is a deviation within ± 10 μm. The exposed portion of the first lead 21 and the second lead 22 on the lower surface 10b of the resin package 10 functions as a terminal for supplying power to the first light emitting element 41 and the second light emitting element 42. As illustrated in FIG. 2, the shape of the portion of the lower surface 21b of the first lead 21 exposed from the resin body 30 and the shape of the portion of the lower surface 22b of the second lead 22 exposed from the resin body 30 are shown. They may be different from each other. By making these shapes different from each other, the polarities of the first lead 21 and the second lead 22 can be determined by the shapes of the two portions exposed from the resin body 30.

As will be described later, the first lead 21 has one or more stretched portions 21s, and the second lead 22 also has one or more stretched portions 22s. As schematically shown in FIGS. 1 and 2, here, the end faces of the stretched portion 21s, which is a part of the first lead 21, are exposed from the outer surfaces 10c, 10e, and 10f of the resin package 10. Further, the end faces of the stretched portion 22s, which is a part of the second lead 22, are exposed from the outer faces 10d, 10e, and 10f of the resin package 10.

FIG. 3 schematically shows an example of the appearance of the structure in which the sealing member 75, the wavelength conversion member 85, and the light reflecting member are removed from the light emitting device 100 when viewed from the normal direction of the upper surface 10a of the resin package 10. .. The first lead 21 has an upper surface 21a located on the opposite side of the lower surface 21b, and the second lead 22 has an upper surface 22a located on the opposite side of the lower surface 22b. A part of the upper surface 21a of the first lead 21 and a part of the upper surface 22a of the second lead 22 are exposed from the resin body 30 at the bottom surface 11b of the recess 11. That is, a part of the upper surface 21a of the first lead 21 and a part of the upper surface 22a of the second lead 22 are located on the bottom surface 11b of the recess 11. Similar to a part of the upper surface 21a of the first lead 21 and a part of the upper surface 22a of the second lead 22, the upper surface 32a of the second resin portion 32 is also located on the bottom surface 11b of the recess 11. The bottom surface 11b of the recess 11 refers to a portion of the surface defining the shape of the recess 11 that is flush with the top surface 21a of the first lead 21 and the top surface 22a of the second lead 22.

In this example, the first light emitting element 41 and the second light emitting element 42 are arranged on the upper surface 21a of the first lead 21. That is, the first lead 21 has an element mounting region 21R on the upper surface 21a in which at least one light emitting element is arranged. From the viewpoint of improving the brightness, a plating layer that reflects light from the light emitting element (in this example, the first light emitting element 41 and the second light emitting element 42) is formed on the surface of the element mounting region 21R of the first lead 21. It is preferable to have. In this example, the protective element 60 is arranged on the upper surface 22a of the second lead 22.

The element mounting region 21R of the first lead 21 is located on the bottom surface 11b of the recess 11. The third resin portion 33 of the resin body 30 projects from the bottom surface 11b of the recess 11 toward the opening 11a and surrounds the element mounting region 21R. In this example, the third resin portion 33 includes a portion located on the second resin portion 32, and surrounds the element mounting region 21R in an annular shape without a break. It can be said that the element mounting region 21R is a region exposed from the resin body 30 in the upper surface 21a of the first lead 21, and is a region inside the annular third resin portion 33. In the top view, the shape of the inner edge of the annular third resin portion 33 is not particularly limited, and may be, for example, a polygonal shape, a circular shape, or the like.

As schematically shown in FIG. 3, each of the first light emitting element 41 and the second light emitting element 42 is electrically connected to the first lead 21 and the second lead 22 by the wire 43. Focusing on the second lead 22, the second lead 22 has a wire connection region 22R. The wire connection region 22R is a region of the upper surface 22a of the second lead 22 exposed from the resin body 30 and is a region to which a wire having a connection with a light emitting element is connected. Similar to the element mounting region 21R, the plating layer may be located on the surface of the wire connection region 22R. In FIG. 3, the wire connection region 22R is drawn as a shaded region for the sake of clarity, but the wire connection region 22R and other regions are shown on the upper surface 22a of the second lead 22. There is not always a clear boundary between and.

The wire connection region 22R is located outside the region of the bottom surface 11b of the recess 11 surrounded by the third resin portion 33 of the resin body 30. In this example, the light emitting device 100 includes two elements, a first light emitting element 41 and a second light emitting element 42, and two wire connection regions 22R on the upper surface 22a of the second lead 22 as an anode or a cathode. Is provided. The number and arrangement of the wire connection regions 22R are selected from the upper surface 22a of the second lead 22 depending on the number of light emitting elements included in the light emitting device, whether a plurality of light emitting elements are connected in series or in parallel, and the like. It can be appropriately changed in the region located between the first resin portion 31 and the third resin portion 33.

The first resin portion 31 of the resin body 30 has wall surfaces 31c, 31d, 31e and 31f forming the inner wall surface of the recess 11. It can be said that the recess 11 of the resin package 10 has a structure formed by the upper surfaces of the plurality of leads, the upper surface of the second resin portion 32, and the inner wall surface of the first resin portion 31 of the resin body 30. The wall surface 31c and the wall surface 31d face each other, and the wall surface 31e and the wall surface 31f face each other. The walls 31c, 31d, 31e and 31f are located on opposite sides of the outer surfaces 10c, 10d, 10e and 10f, respectively. In the example shown in FIG. 3, two adjacent walls 31c, 31d, 31e and 31f are smoothly connected so as to form a curved surface, and a clear boundary is formed between the two wall surfaces. do not have.

In the example shown in FIG. 3, the opening 11a of the recess 11 has a substantially quadrangular shape when viewed from above, and three of the four corners are rounded. In the example shown in FIG. 3, the mark Mk is formed on the resin package 10 by chamfering one of the four substantially quadrangular corners of the opening 11a in a straight line. This mark Mk functions as an anode mark or a cathode mark indicating the polarities of the first lead 21 and the second lead 22. In this example, the outer edge of the bottom surface 11b of the recess 11 is rounded at the positions of the four corners in a top view so as to draw an arc having a larger radius than the outer edge of the opening 11a. There is.

FIG. 4 schematically shows a cross section when the light emitting device 100 is cut perpendicularly to the upper surface 10a of the resin package 10 near the center of the light emitting device 100. The cross section shown in FIG. 4 is a ZX plane cross section when the light emitting device 100 is cut at the position of the IV-IV line shown in FIG. However, in order to avoid the drawing from becoming excessively complicated, the illustration of some elements such as the wire 43 is omitted in FIG. Note that FIG. 3 is a schematic plan view in which the sealing member 75, the wavelength conversion member 85, and the light reflecting member 50 described later are removed from the light emitting device 100, and FIG. 4 shows the sealing member 75. The wavelength conversion member 85 and the light reflective member 50 are also represented.

The third resin portion 33 is located above the bottom surface 11b of the recess 11 in the resin body 30. As shown in FIG. 4, an inclined surface 50s is provided in the region between the inner wall surface (wall surfaces 31e and 31f in FIG. 4) of the first resin portion 31 and the third resin portion 33 in the bottom surface 11b of the recess 11. The light-reflecting member 50 to have is formed. Since the third resin portion 33 has a shape protruding from the bottom surface 11b of the recess 11, in the process of forming the light reflective member 50, the material of the light reflective member 50 is placed in the element mounting region of the third resin portion 33. It can function as a dam that prevents it from flowing into the 21R. That is, by providing the third resin portion 33 in the resin body 30, the side surfaces of the first light emitting element 41 and the second light emitting element 42 are covered with the light reflecting member 50 in the process of forming the light reflecting member 50. Can be suppressed.

The height of the third resin portion 33, that is, the distance from the bottom surface 11b of the recess 11 to the top of the third resin portion 33 is, for example, in the range of about 70 μm or more and 100 μm or less. The cross-sectional shape of the third resin portion 33 is not limited to the shape illustrated in FIG. 4, and various cross-sectional shapes can be adopted. The surface of the third resin portion 33 may include an inclined portion that is inclined with respect to the bottom surface 11b of the recess 11 in a cross-sectional view. As will be described later, the third resin portion 33 can be formed from a resin material containing a light-reflecting filler such as titanium oxide particles. Since the third resin portion 33 has an inclined portion facing the light emitting element, the surface of the inclined portion can be used as a reflecting surface. That is, the light emitted from the light emitting element and incident on the third resin portion 33 can be reflected to the opening 11a side of the recess 11 at the position of the inclined portion, and the light extraction efficiency is improved. That is, higher brightness can be obtained. If an inclined portion is provided over the entire circumference of the annular third resin portion 33, it is advantageous for improving the light extraction efficiency of the light emitting device.

In the configuration illustrated in FIG. 4, the inclined surface 50s of the light reflecting member 50 is recessed on the bottom surface 11b side of the recess 11. The surface of the light-reflecting member 50 may have a concave shape recessed toward the first resin portion 31 of the resin body 30. Further, in the embodiment of the present disclosure, the wavelength conversion member 85 is arranged on the light reflecting member 50. The remaining space in the recess 11 is filled with the sealing member 75. That is, the sealing member 75 covers the light emitting element (first light emitting element 41 and the second light emitting element 42 in this example) arranged in the element mounting region 21R and the wavelength conversion member 85 in the recess 11.

In the configuration illustrated in FIG. 4, the upper surface 21a of the first lead 21 has a groove portion 21g, and a part of the material of the resin body 30 is located in the groove portion 21g. FIG. 4 shows an example in which a portion of the resin body 30 located inside the groove portion 21g of the first lead 21 is made of the same material as the material of the third resin portion 33 of the resin body 30. As in this example, a part of the material of the resin body 30 is arranged in the groove portion 21g provided on the upper surface 21a of the first lead 21, and the third resin portion 33 is formed so that at least a part thereof overlaps with the groove portion 21g. It is preferable to do so. By including the portion where the third resin portion 33 overlaps the groove portion 21g, the first lead 21 to the third resin portion 33 are compared with the case where the third resin portion 33 is formed directly on the upper surface 21a of the first lead 21. Can be reduced from peeling off. As illustrated in FIG. 4, the width of the portion of the resin body 30 located inside the groove portion 21g of the first lead 21 is typically wider than the width of the third resin portion 33 located immediately above the portion. Is also big. The interface between the resin body 30 and the first lead 21 is increased by increasing the width of the portion of the resin body 30 located inside the groove portion 21 g of the first lead 21 as compared with the width of the third resin portion 33. Since the area of the third resin portion 33 can be increased, peeling of the third resin portion 33 from the first lead 21 can be suppressed more effectively.

In the example shown in FIG. 4, the resin body 30 further has a fourth resin portion 34 that covers a part of the upper surface 21a of the first lead 21. As shown in FIGS. 3 and 4, the fourth resin portion 34 connects the wall surface 31e of the first resin portion 31 and the third resin portion 33. As in this example, by providing the resin body 30 with the fourth resin portion 34 that covers the upper surface 21a of the first lead 21, the bond between the resin body 30 and the first lead 21 can be further strengthened. .. In the example shown in FIG. 4, the upper surface of the fourth resin portion 34 is located higher than the bottom surface 11b of the recess 11.

In this example, the upper surface 21a of the first lead 21 further has two groove portions 21h. The groove portion 21h is provided on the upper surface 21a at a position where it overlaps with the first light emitting element 41 and the second light emitting element 42. As schematically shown in FIG. 4, the first light emitting element 41 and the second light emitting element 42 are joined to the upper surface 21a of the first lead 21 by a joining member 44 such as resin or solder. At this time, by forming the groove portion 21h at a position overlapping the first light emitting element 41 and the second light emitting element 42, a part of the joining member 44 can be arranged inside the groove portion 21h. By locating a part of the joining member 44 inside the groove portion 21h, the effect of improving the joining strength between the first lead 21 and the joining member 44 can be obtained.

The groove portion 21h is formed, for example, linearly in a region of the element mounting region 21R that overlaps with the light emitting element. The shape, number, arrangement, etc. of the groove portion 21h can be appropriately changed according to the number, arrangement, etc. of the light emitting elements, and is not limited to the two linear forms as in this example. When the number of light emitting elements arranged in the element mounting region 21R is one, the light emitting elements may be arranged between the two grooves.

[First light emitting element 41, second light emitting element 42]
As the first light emitting element 41 and the second light emitting element 42, a semiconductor light emitting element such as an LED can be used. In the configuration illustrated in FIG. 4, the light emitting device 100 has two light emitting elements, a first light emitting element 41 and a second light emitting element 42. However, the number of light emitting elements included in the light emitting device according to the embodiment of the present disclosure is not limited to this example, and may be one or three or more.

The first light emitting element 41 and the second light emitting element 42, light emission can be a nitride semiconductor of ultraviolet to visible range _{(In x Al y Ga 1-} x-y N, 0 ≦ x, 0 ≦ y, x + y ≦ 1) May include. The spectra of the light emitted from the first light emitting element 41 and the second light emitting element 42 may be the same or different from each other. For example, the first light emitting element 41 may emit blue light, and the second light emitting element 42 may emit green light. When the light emitting device has three light emitting elements, the three light emitting elements may emit blue light, green light, and red light, respectively. In the following, as the first light emitting element 41 and the second light emitting element 42, an LED that emits blue light will be illustrated.

[Joining member 44]
The first light emitting element 41 and the second light emitting element 42 are fixed to the element mounting region 21R of the first lead 21 by the joining member 44. As the joining member 44, for example, a resin material that can be used as a base material of the resin body 30 can be used. Alternatively, a tin-bismuth-based, tin-copper-based, tin-silver-based or gold-tin-based solder, a conductive paste or bump containing silver, gold, palladium, etc., a brazing material such as a low melting point metal, or a brazing material, or An anisotropic conductive material can be used as the joining member 44.

[Wire 43]
The first light emitting element 41 and the second light emitting element 42 are electrically connected to the first lead 21 and the second lead 22 by the wire 43 (see FIG. 3). In the example shown in FIG. 3, the first light emitting element 41 and the second light emitting element 42 are electrically connected in parallel. The first light emitting element 41 and the second light emitting element 42 may be connected in series.

As the wire 43, for example, a wire of a metal such as gold, copper, silver, platinum, aluminum, palladium, or an alloy containing one or more of these can be used. When the material of the wire 43 contains gold, it is advantageous because a wire having excellent thermal resistance and the like and hardly breaking due to stress from the sealing member 75 can be obtained. When the material of the wire 43 contains silver, it is advantageous because a wire showing high light reflectance can be obtained. In particular, it is beneficial to use wires containing both gold and silver. When the wire 43 is a wire containing both gold and silver, the silver content ratio is, for example, 15% or more and 20% or less, 45% or more and 55% or less, 70% or more and 90% or less, or 95%% or more and 99% or less. Can be a range. In particular, when the silver content ratio is 45% or more and 55% or less, the possibility of sulfurization can be reduced while obtaining high light reflectance. The diameter of the cross section of the wire 43 can be appropriately selected, and can be, for example, 5 μm or more and 50 μm or less. The diameter of the cross section of the wire 43 is more preferably 10 μm or more and 40 μm or less, and even more preferably 15 μm or more and 30 μm or less.

[Protective element 60]
As illustrated in FIG. 3, the light emitting device 100 may have a protective element 60. As the protection element 60, various protection elements typified by Zener diodes can be used. The protective element 60 is arranged, for example, on the upper surface 22a of the second lead 22, and is embedded in the light reflecting member 50. By forming the light reflecting member 50 so as to cover the protective element 60, it is possible to suppress the light from the first light emitting element 41 and the second light emitting element 42 from being absorbed by the protective element 60.

The protective element 60 is typically electrically connected in parallel with the light emitting element (here, the first light emitting element 41 and the second light emitting element 42). In the example shown in FIG. 3, one of the two terminals of the protection element 60 is connected to the upper surface 21a of the first lead 21 by a wire. The other terminal of the protective element 60 may be electrically connected to the upper surface 22a of the second lead 22 by, for example, a solder, a conductive paste, a bump, an anisotropic conductive material, or a brazing material such as a low melting point metal.

[Light reflective member 50]
As can be understood from FIGS. 1 and 4, the light reflecting member 50 has the inner wall surfaces (wall surfaces 31c, 31d, 31e and 31f) of the recess 11 and the resin body 30 in the recess 11 of the resin package 10. 3 Located in the region between the resin portion 33 and the resin portion 33. As the light reflecting member 50, a material having a low transmittance for light and / or external light from the light emitting element or hardly absorbing light and / or external light from the light emitting element can be used. For example, the light-reflecting member 50 can be formed from a resin material in which a light-reflective filler is dispersed in a resin as a base material. An uncured resin material is applied to the region between the inner wall surface and the third resin portion 33 of the bottom surface 11b of the recess 11 by potting or the like, and then the applied resin material is cured to reflect light into the recess 11. The sex member 50 can be formed.

The light reflective member 50 is formed between the inner wall surface of the recess 11 and the third resin portion 33 surrounding the element mounting region 21R. By forming the light reflecting member 50 in the recess 11 so as to surround the first light emitting element 41 and the second light emitting element 42 in a plan view, the light is emitted from the first light emitting element 41 and the second light emitting element 42. The light incident on the reflective member 50 can be reflected by the inclined surface 50s toward the opening 11a of the recess 11. That is, by providing the light reflecting member 50 in the recess 11, the light extraction efficiency of the light emitting device can be improved.

As schematically shown in FIG. 4, the light reflecting member 50 can be formed from the opening 11a of the recess 11 to at least the position of the third resin portion 33. As shown in the example shown in FIG. 4, in a cross-sectional view, the inclination angle formed by the straight line connecting the upper end portion and the lower end portion of the inclined surface 50s of the light reflecting member 50 and the bottom surface 11b of the recess 11 is the inclination angle of the recess 11. It is preferably smaller than the inclination angle formed by the straight line connecting the upper end portion and the lower end portion of the inner wall surface (for example, the wall surface 31f) and the bottom surface 11b of the recess 11. When the inclination of the inclined surface 50s is gentler than the inclination of the inner wall surface of the recess 11, the light reflecting member 50 can be formed closer to the light emitting element. By forming the light-reflecting member 50 close to the light-emitting element, the light emitted from the first light-emitting element 41 and the second light-emitting element 42 and incident on the light-reflecting member 50 is efficiently directed to the opening 11a. Can be reflected. It is preferable that the top of the third resin portion 33 is lower than the upper surface of the light emitting element. According to such a configuration, the light from the light emitting element can be easily incident on the inclined surface 50s of the light reflecting member 50, so that the light emitted from the light emitting element can be efficiently emitted from the opening 11a to the outside. become.

In cross-sectional view, the shape of the inclined surface 50s, which is the surface of the light reflecting member 50, is not limited to the linear shape. In particular, here, the inclined surface 50s of the light reflecting member 50 has a concave surface shape recessed toward the first resin portion 31 of the resin body 30. Since the surface of the light reflecting member 50 is concave, it becomes easy to reflect the incident light toward the side opposite to the bottom surface 11b of the concave portion 11. Further, by making the surface of the light reflecting member 50 concave, it becomes easy to form the wavelength conversion member 85 on the light reflecting member 50.

As the base material of the light reflective member 50, a thermosetting resin, a thermoplastic resin, or the like can be used. Specific examples of the base material are phenol resin, epoxy resin, BT resin, polyphthalamide (PPA), silicone resin and the like. As the light-reflecting filler dispersed in the base material, particles such as titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide and aluminum nitride can be used. It is beneficial if the light-reflecting member 50 has a white color. A reflective member that is difficult to absorb light from the light emitting element and has a large difference in refractive index from the base material may be dispersed in the resin as the base material.

[Wavelength conversion member 85]
The wavelength conversion member 85 located on the light-reflecting member 50 contains a base material (first base material) such as a resin and particles of a phosphor dispersed in the base material, and is a part of incident light. And emits light with a wavelength different from the incident light. By forming the wavelength conversion member 85 on the light reflecting member 50, the light emitted from the first light emitting element 41 or the second light emitting element 42 and the light emitted from the wavelength conversion member 85, for example, white light. Can be taken out. The base material of the wavelength conversion member 85 includes a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, a urea resin, a phenol resin, an acrylic resin, a urethane resin or a fluororesin, or two or more of these resins. A material selected from resins can be used.

The wavelength conversion member 85 contains one or more kinds of phosphors including the first phosphor. A known material can be applied to the phosphor dispersed in the base material of the wavelength conversion member 85. As the first phosphor, for example, a phosphor having an emission peak wavelength in a band of more than 525 nm and 535 nm or less can be applied. An example of a phosphor having an emission peak wavelength in the band of more than 525 nm and 535 nm or less is a YAG-based phosphor (for example, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce ₃ ⁺ ) called G-YAG. The YAG-based phosphor converts blue light into yellow light to yellow-green light. As the first phosphor, a fluoride-based phosphor such as a KSF-based phosphor, a nitride-based phosphor such as CASN, a β-sialon phosphor, or the like may be applied. The KSF-based phosphor and CASN are examples of phosphors that convert blue light into red light, and β-sialon phosphors are examples of phosphors that convert blue light into green light. The first phosphor may be a quantum dot phosphor.

As illustrated in FIG. 1, the wavelength conversion member 85 may have a shape that continuously surrounds one or more light emitting elements arranged in the element mounting region 21R in a plan view. By forming the wavelength conversion member 85 in the recess 11 so as to continuously surround the light emitting element in a plan view, the light emitting surface is compared with the arrangement in which the wavelength conversion members 85 are scattered in the recess 11. Color unevenness on the upper surface of the sealing member 75 can be suppressed more effectively.

As illustrated in FIG. 4, in a typical embodiment of the present disclosure, the wavelength conversion member 85 is separated from the first lead 21. Further, although not shown in FIG. 4, the wavelength conversion member 85 is also separated from the second lead 22. In other words, the wavelength conversion member 85 does not have a portion in contact with the upper surface 21a of the first lead 21, nor does it have a portion in contact with the upper surface 22a of the second lead 22. In the example shown in FIG. 4, the wavelength conversion member 85 does not extend inside the region of the bottom surface 11b of the recess 11 surrounded by the third resin portion 33 of the resin body 30. Therefore, in the configuration illustrated in FIG. 4, the wavelength conversion member 85 is separated from both the first light emitting element 41 and the second light emitting element 42. According to such a configuration, the light emitting element arranged in the element mounting region 21R is not covered by the wavelength conversion member 85. Therefore, among the light from the light emitting element, the light reflected by the wavelength conversion member 85 can be suppressed from being absorbed by the light emitting element. As a result, it is possible to suppress a decrease in the light extraction efficiency of the light emitting device.

[Sealing member 75]
The sealing member 75 contains at least a second base material such as resin, and in the recess 11, the first light emitting element 41, the second light emitting element 42, the third resin portion 33 of the resin body 30, the wavelength conversion member 85, and the wire. It covers 43 mag. The sealing member 75 has a function of covering the first light emitting element 41 and the second light emitting element 42 to protect them from external force, dust, moisture and the like.

As the second base material, the same material as the first base material of the wavelength conversion member 85 can be applied. It is beneficial to select a material having a transmittance of 60% or more with respect to the light emitted from the light emitting element as the second base material, and the transmittance of the second base material with respect to the light emitted from the light emitting element is 90% or more. Is more beneficial. Specific examples of the second base material are silicone resin, epoxy resin, acrylic resin, resin material containing one or more of these, and the like. The sealing member 75 may be a single layer or may be composed of a plurality of layers. Particles such as titanium oxide, silicon oxide, zirconium oxide, and aluminum oxide may be dispersed in the second base material.

The light emitted from the light emitting element in the element mounting region 21R and traveling toward the inner wall surface of the recess 11 is reflected toward the opening 11a of the recess 11 at the position of the inclined surface 50s of the light reflecting member 50. In other words, the interface between the wavelength conversion member 85 and the light reflecting member 50 has a function as a reflecting surface. From the viewpoint of reducing total reflection at the interface between the sealing member 75 and the wavelength conversion member 85 and effectively allowing light to reach the interface between the wavelength conversion member 85 and the light reflective member 50. It is advantageous that there is no substantial difference between the refractive index of the first base material in the wavelength conversion member 85 and the refractive index of the second base material in the sealing member 75. More specifically, when the refractive index of the first base material in the wavelength conversion member 85 is n ₁ and the refractive index of the second base material in the sealing member 75 is n ₂ , | n ₁ −n ₂ | It is preferable that the relationship of ≦ 0.05 is established. As a result of reducing the total reflection at the interface between the sealing member 75 and the wavelength conversion member 85, it becomes easy for the light from the light emitting element in the element mounting region 21R to enter the wavelength conversion member 85. As a result, the light emitted from the wavelength conversion member 85 by being excited by the light from the light emitting element can be easily taken out to the outside of the light emitting device 100. By selecting a phenylsilicone resin (a resin containing an organic polysiloxane having at least one phenyl group in the molecule) as both the first base material and the second base material, | n ₁ −n ₂ | ≦ 0. The relationship of 05 can be satisfied.

Here, the "refractive index" in the present specification means the refractive index at the emission peak wavelength of the light emitting element arranged in the element mounting region 21R. When a plurality of light emitting elements are arranged in the element mounting region 21R as in the example shown in FIG. 4, the “refractive index” in the present specification is the refraction at the emission peak wavelength of any one of the light emitting elements. Interpreted as a rate.

As described above, the interface between the wavelength conversion member 85 and the light reflecting member 50 has a function as a reflecting surface. Therefore, it is beneficial that the refractive index of the base material (fourth base material) in the light-reflecting member 50 is smaller than the refractive index of the first base material in the wavelength conversion member 85. Since the base material in the light-reflecting member 50 has a refractive index smaller than that of the first base material in the wavelength conversion member 85, total reflection at the interface between the wavelength conversion member 85 and the light-reflecting member 50 is utilized. Therefore, the light extraction efficiency of the light emitting device 100 can be improved. For example, a phenylsilicone resin is selected as the first base material in the wavelength conversion member 85, and a dimethylsilicone resin (an organic having a D unit in which two methyl groups are bonded to a silicon atom) is selected as the base material in the light reflective member 50. By selecting a resin containing polysiloxane), the effect of improving the brightness of the light emitting device 100 can be expected.

The sealing member 75 may contain one or more phosphors that convert the wavelength of light from the first light emitting element 41 and / or the second light emitting element 42. For example, the sealing member 75 may contain a second phosphor in addition to the second base material. As the second phosphor, it is useful to select a phosphor whose emission peak wavelength is located on the longer wavelength side than the first phosphor in the wavelength conversion member 85. When the wavelength conversion member 85 contains, for example, G-YAG as the first phosphor, a phosphor having an emission peak wavelength in the band of 515 nm or more and 525 nm or less is used as the second phosphor to be dispersed in the sealing member 75. Can be done. An example of such a fluorescent substance is a LAG-based fluorescent substance (for example, Lu ₃ Al ₅ O ₁₂ : Ce ₃ ).

The emission peak wavelength of the second phosphor in the sealing member 75 is longer than the emission peak wavelength of the first phosphor in the wavelength conversion member 85 located farther from the light emitting element as compared with the sealing member 75. Therefore, the excitation of the first phosphor in the wavelength conversion member 85 by the light from the second phosphor can be avoided. In other words, it is possible to avoid a decrease in light extraction efficiency due to absorption of light from the second phosphor by the first phosphor.

The sealing member 75 may contain a different type of phosphor in addition to the second phosphor. For example, the wavelength conversion member 85 may contain G-YAG as the first phosphor, and the sealing member 75 may additionally contain G-YAG as the second phosphor. However, the concentration of the phosphor as a whole in the sealing member 75 is lower than the concentration of all the phosphors (which include the first phosphor) contained in the wavelength conversion member 85. For example, when the wavelength conversion member 85 contains G-YAG as the first phosphor and the sealing member 75 contains YAG and G-YAG as the second phosphor, the YAG in the sealing member 75. And the concentration of G-YAG as a whole is lower than the concentration of G-YAG in the wavelength conversion member 85.

The concentration of the phosphor in the member constituting the light emitting device can be calculated from the SEM image of the cross section (for example, the IV-IV cross section in FIG. 3) when the light emitting device is cut perpendicular to the upper surface near the center of the light emitting device. For example, in the case of the concentration of the phosphor in the sealing member 75, first, an image relating to the cross section of the light emitting device is acquired so as to include the entire light emitting device. Then, the ratio of the area occupied by the phosphor in the sealing member 75 to the entire sealing member 75 in the obtained image can be used as the concentration of the phosphor in the sealing member 75. Similarly, for the concentration of the phosphor in the wavelength conversion member 85, the area of the phosphor in the wavelength conversion member 85 appearing in the image regarding the cross section of the light emitting device is obtained, and the ratio to the area of the entire wavelength conversion member 85 is calculated. Just do it. The cross section for calculating the concentration of the phosphor may be parallel or perpendicular to one side of the rectangular shape on the upper surface of the light emitting device. Alternatively, the concentration of the phosphor in the member may be calculated based on the cross-sectional image when the light emitting device is cut along the rectangular diagonal line on the upper surface of the light emitting device.

As will be described later with reference to Examples, according to the study of the present inventor, the concentration of the phosphor in the sealing member 75 having a portion located closer to the light emitting element than the wavelength conversion member 85. The light extraction efficiency can be improved by reducing the amount of light. The concentration of all the phosphors including the second phosphor in the sealing member 75 is preferably 0.1 times or more the concentration of all the phosphors including the first phosphor in the wavelength conversion member 85. . Less than 5 times. When the total concentration of the phosphor in the sealing member 75 is 0.1 times or more the concentration of the phosphor in the wavelength conversion member 85, it is advantageous from the viewpoint of improving the color rendering property.

As will be described later, the sealing member 75 is filled after forming the wavelength conversion member 85, filling the recess 11 with a material containing a second base material such as resin and at least a second phosphor by potting or the like. It can be formed by curing the material. At this time, the second phosphor dispersed in the second base material may settle before the material filled in the recess 11 is cured.

FIG. 5 schematically shows a cross section when the light emitting device 100 is cut perpendicularly to the upper surface 10a of the resin package 10 at the position of the VV line shown in FIG. FIG. 3 is a schematic plan view in which the sealing member 75, the wavelength conversion member 85, and the light reflecting member 50 are removed from the light emitting device 100. Similar to FIG. 4, in FIG. 5, these members are illustrated without omitting the sealing member 75, the wavelength conversion member 85, and the light reflecting member 50. FIG. 6 schematically shows the first light emitting element 41 and its periphery in the YZ cross section of the light emitting device 100 shown in FIG. 5 in an enlarged manner. In these figures, some elements are omitted in order to avoid making the drawings excessively complicated.

In the configurations illustrated in FIGS. 5 and 6, the first light emitting element 41 has a support substrate 411 having a lower surface 411b and a semiconductor laminated structure 412 including one or more semiconductor layers. The support substrate 411 is, for example, a sapphire substrate or a gallium nitride substrate. In the example shown in FIGS. 5 and 6, the first light emitting element 41 is joined to the first lead 21 by the joining member 44 so that the lower surface 411b of the support substrate 411 faces the upper surface 21a of the first lead 21. There is. In this example, the semiconductor laminated structure 412 is formed on the main surface of the support substrate 411 opposite to the lower surface 411b. That is, here, the semiconductor laminated structure 412 is located on the side opposite to the first lead 21 with respect to the support substrate 411.

The semiconductor laminated structure 412 includes an active layer, an n-type semiconductor layer and a p-type semiconductor layer sandwiching the active layer. In the examples shown in FIGS. 5 and 6, the p-side and n-side electrodes 414 are provided on the semiconductor laminated structure 412. In this example, the lower surface 411b of the support substrate 411 coincides with the lower surface of the first light emitting element 41, and therefore, it can be said that the electrode 414 is located on the upper surface 41a side opposite to the lower surface of the first light emitting element 41. ..

As described above, in the step of forming the sealing member 75, the second phosphor dispersed in the second base material may settle before the material filled in the recess 11 is cured. Therefore, the concentration of the second phosphor in the sealing member 75 may have a gradient that decreases from the bottom surface 11b of the recess 11 toward the opening 11a along the Z direction in the drawing. In FIG. 6, the shaded circle 75p schematically represents the second phosphor in the sealing member 75. In the example shown in FIG. 6, the concentration of the second phosphor at the height of the light emitting element arranged in the element mounting region 21R, for example, the upper surface 41a of the first light emitting element 41 is the height of the lower surface of the first light emitting element 41. (Here, it corresponds to the height of the lower surface 411b of the support substrate 411), which is smaller than the concentration of the second phosphor. In other words, in the configuration illustrated in FIG. 6, the concentration of the second phosphor in the portion of the sealing member 75 located between the first light emitting element 41 and the third resin portion 33 in cross-sectional view is the first. It is lowered from the position of the upper surface 21a of the lead 21 toward the position of the upper surface 41a of the first light emitting element 41.

FIG. 7 schematically shows another example of the distribution of the second phosphor in the sealing member as a reference example. FIG. 7 schematically shows an example of the distribution of the second phosphor in the sealing member in the light emitting device having a configuration in which the formation of the wavelength conversion member 85 on the light reflecting member 50 is omitted. Compared with the example described with reference to FIG. 6, in the example shown in FIG. 7, a larger amount of the second phosphor 76p is dispersed in the sealing member 76 covering the first light emitting element 41.

As described above, when the second phosphor is settled, the concentration of the second phosphor in the portion of the sealing member located near the bottom surface 11b of the recess 11 tends to increase. In the example shown in FIG. 7, a larger amount of the second phosphor 76p is contained in the sealing member 76, and as a result, the second phosphor is covered with the side surface located between the upper surface and the lower surface of the first light emitting element 41. The phosphor 76p is located near the bottom surface 11b of the recess 11. When many phosphors are present near the side surface of the light emitting element as in this example, a part of the light emitted from the side surface of the light emitting element may be reflected by the phosphor and absorbed by the light emitting element. That is, there is room for improving the light extraction efficiency of the light emitting device by suppressing the light from the light emitting element from being reflected by the phosphor located near the side surface of the light emitting element.

On the other hand, in the embodiment of the present disclosure, the wavelength conversion member 85 is arranged on the light reflecting member 50 formed in the recess 11 so as to surround the light emitting element. Therefore, the concentration of the phosphor in the sealing member 75 can be reduced as compared with the configuration in which the wavelength conversion member 85 is not provided on the light reflecting member 50. Since it is possible to reduce the concentration of the phosphor in the sealing member 75 as compared with the configuration in which the wavelength conversion member 85 is not provided on the light reflecting member 50, the phosphor is deposited near the side surface of the light emitting element. Can be suppressed. As a result, it is possible to prevent the light emitted from the side surface of the light emitting element from being reflected by the phosphor in the sealing member 75 and being absorbed by the light emitting element. That is, it is possible to allow more light to reach the inclined surface 50s of the light reflecting member 50, and it is possible to suppress a decrease in light extraction efficiency due to accumulation of a phosphor near the side surface of the light emitting element. Even when the phosphor in the sealing member 75 does not settle, the decrease in the concentration of the phosphor reduces the light reflected by the phosphor in the sealing member 75 and absorbed by the light emitting element. obtain. That is, even when the phosphor in the sealing member 75 does not settle, the effect of improving the brightness of the light emitting device can be expected by reducing the concentration of the phosphor in the sealing member 75. Further, by arranging the wavelength conversion member 85 in the recess 11 so as to selectively cover the surface of the light reflecting member 50 that functions as a reflecting surface, the concentration of the phosphor in the sealing member 75 is reduced. However, it is possible to suppress a change in the tint of the emitted light due to a decrease in the concentration of the phosphor in the sealing member 75.

The concentration of the second phosphor at the height of the upper surface of the light emitting element arranged in the element mounting region 21R and the concentration of the second phosphor at the height of the lower surface of the light emitting device are determined in the members constituting the light emitting device. Similar to the concentration of the phosphor, it can be calculated from the cross-sectional image when the light emitting device is cut perpendicular to the upper surface. First, in the cross-sectional image of the light emitting device, it is assumed that the length of one side is, for example, 1/3 of the height of the light emitting device (distance between the upper surface and the lower surface). Then, in the case of the concentration of the second phosphor at the height of the lower surface of the light emitting element, the bottom of this square region coincides with the position of the lower surface of the light emitting element, and the phosphor occupies the area of the entire region. Find the area ratio. A similar area ratio can be calculated at a plurality of locations, and the average value thereof can be used as the concentration of the second phosphor at the height of the lower surface of the light emitting element. If the concentration of the second phosphor at the height of the upper surface of the light emitting element, the side facing the bottom of the square region should match the position of the upper surface of the light emitting element, and the average value of the area ratio should be the same in the same procedure. Is obtained, and this may be used as the concentration of the second phosphor at the height of the upper surface of the light emitting element. The length of one side of the square region used for calculating the concentration of the second phosphor is not limited to 1/3 of the height of the light emitting device, and other values may be adopted.

FIG. 8 shows a schematic cross section of a light emitting device according to another embodiment of the present disclosure. Compared with the light emitting device 100 described with reference to FIGS. 4 and 5, the light emitting device 100A shown in FIG. 8 further has a covering member 751 located on the upper surface 41a of the first light emitting element 41. .. In the configuration illustrated in FIG. 8, the sealing member 75 located in the recess 11 of the resin package 10 also covers the covering member 751. Note that FIG. 8 schematically shows a ZX cross section when the light emitting device 100A is cut perpendicularly to the upper surface 10a of the resin package 10 near the center of the light emitting device 100A, similarly to the cross section shown in FIG.

The covering member 751 may contain a third base material and a third phosphor dispersed in the third base material. An uncured material containing the third base material and the third phosphor is applied onto the upper surface 41a of the first light emitting element 41 by potting, and the applied material is cured to form the covering member 751. be able to.

Here, as the third phosphor, a phosphor different from the first phosphor in the wavelength conversion member 85 can be selected. For example, as the third phosphor, a phosphor having a longer emission peak wavelength than that of the first phosphor in the wavelength conversion member 85 can be used. By locating the emission peak wavelength of the third phosphor in the coating member 751 arranged closer to the first light emitting element 41 on the longer wavelength side than the emission peak wavelength of the first phosphor in the wavelength conversion member 85. , The excitation of the first phosphor in the wavelength conversion member 85 by the light from the third phosphor can be avoided. That is, the light extraction efficiency of the light emitting device 100A can be improved. As described above, in the embodiment of the present disclosure, the phosphor in the member located farther from the light emitting element can exhibit a shorter emission peak wavelength. When the wavelength conversion member 85 contains, for example, G-YAG as the first phosphor, the coating member 751 may contain a phosphor having an emission peak wavelength in the band of 607 nm or more and 640 nm or less as the third phosphor. Examples of a phosphor having an emission peak wavelength 640nm band below the above 607nm are nitride phosphors called SCASN (e.g. _{(Sr, Ca) AlSiN 3:} Eu 2 +) is.

Generally, in a light emitting element such as an LED, the light intensity near the optical axis is high. As in the configuration illustrated in FIG. 8, the light emitted from the light emitting device 100A is generated by forming the coating member 751 containing the third phosphor on the upper surface of the light emitting element so as to cover the upper surface of the light emitting element. The intensity on the long wavelength side of the spectrum can be improved. That is, the effect of lowering the color temperature can be obtained.

As the third base material, the same material as the first base material in the wavelength conversion member 85 or the second base material in the sealing member 75 can be applied. _{However, between the refractive index n 2} of the second base material in the sealing member 75 _{and the refractive index n 3} of the third base material in the covering member 751, | n _{2 −} n ₃ | ≦ 0.05. It is preferable that the relationship is established. Since there is no substantial difference between the refractive index of the second base material in the sealing member 75 and the refractive index of the third base material in the covering member 751, the interface between the sealing member 75 and the covering member 751. This is because the total reflection in the light emitting device can be suppressed, and the light extraction efficiency of the light emitting device can be expected to be improved. As a combination of the second base material and the third base material satisfying the relationship of | n ₂ −n ₃ | ≦ 0.05, a configuration in which a phenyl silicone resin is used for both the second base material and the third base material can be exemplified.

FIG. 9 shows a schematic cross section of a light emitting device according to still another embodiment of the present disclosure. When a plurality of light emitting elements are arranged in the element mounting region 21R, a covering member may be formed on the upper surface of the light emitting elements. Compared with the light emitting device 100A shown in FIG. 8, the light emitting device 100B shown in FIG. 9 is placed on the upper surface 42a of the second light emitting element 42 in addition to the covering member 751 located on the upper surface 41a of the first light emitting element 41. It has a covering member 752 located. Note that FIG. 9 schematically shows a ZX cross section when the light emitting device 100B is cut perpendicularly to the upper surface 10a of the resin package 10 near the center of the light emitting device 100B, similarly to FIG. 8 described above.

The covering member 752 on the second light emitting element 42 may or may not contain a phosphor. For example, if the color temperature of the light taken out of the resin package 10 is too low just by arranging the covering member 751 on the first light emitting element 41, the fluorescence of SCASSN or the like is contained in the base material of the covering member 752. The body may be dispersed. At this time, the concentration of the phosphor may be different between the coating member 751 on the first light emitting element 41 and the coating member 752 on the second light emitting element 42.

It is not essential that the phosphor in the covering member 751 and the phosphor in the covering member 752 are common. That is, the phosphor in the covering member 752 may not be the same as the third phosphor in the covering member 751. For example, the covering member 751 contains a wavelength conversion member such as CASN that converts blue light into red light as a third phosphor, and the covering member 752 contains light having a wavelength shorter than that of red light. It may contain a phosphor that converts yellow light, green light or blue light). At this time, as in the configuration illustrated in FIG. 9, when the covering member 751 and the covering member 752 are independently formed on the first light emitting element 41 and the second light emitting element 42, respectively, the covering member 751 and the covering member 751 The covering member 752 is spatially separated from the covering member 752. According to such an arrangement of the covering member 751 and the covering member 752, it is possible to suppress the excitation of the third phosphor in the covering member 751 by the light wavelength-converted by the phosphor in the covering member 752. .. That is, light having a wavelength shorter than that of red light generated by undergoing wavelength conversion by the phosphor in the covering member 752 by arranging the covering member 751 and the covering member 752 spatially separated from each other inside the recess 11. Can be suppressed from being absorbed by the covering member 751. Therefore, it becomes easier to take out light having a shorter wavelength than red light emitted from the covering member 752. From the viewpoint of obtaining higher brightness, when a plurality of light emitting elements are arranged inside the recess 11 of the resin package 10, a plurality of light emitting elements may be provided as a coating member containing a phosphor as in the example of FIG. It is advantageous to selectively arrange some of them on the upper surface of the light emitting element.

The covering member 751 and the covering member 752 are formed by applying an uncured material to the upper surface of the first light emitting element 41 and the upper surface of the second light emitting element 42 by a potting method or the like, and then curing the applied material. Can be formed. The covering member 751 may cover the side surface of the first light emitting element 41. Similarly, the covering member 752 may cover the side surface of the second light emitting element 42. By dispersing a material having a refractive index different from that of the base material, the covering member 751 and / or the covering member 752 may be provided with a function of light diffusion.

[Example manufacturing method of light emitting device]
Hereinafter, an exemplary manufacturing method of the light emitting device according to the embodiment of the present disclosure will be briefly described. Generally, a method for manufacturing a light emitting device includes a step of preparing an assembly substrate including a lead frame as a part thereof, and a step of separating the assembly substrate into individual pieces to obtain a plurality of light emitting devices.

10 and 11 show a part of the lead frame taken out from the assembly substrate. FIG. 10 shows the front side of the lead frame (the side on which the light emitting element is arranged), and FIG. 11 shows the appearance when the lead frame 202 shown in FIG. 10 is turned inside out. 10 and 11 show a range of the lead frame 202 including four light emitting structures, each of which becomes a light emitting device after the assembly substrate is separated, and the rectangular wave of the alternate long and short dash line in FIG. 10 is shown. , A portion corresponding to one of these light emitting structures 100L is shown. The lead frame 202 may have a base material such as copper and a metal layer covering the base material.

As shown in FIGS. 10 and 11, each lead frame 202 has a plurality of sets including a first lead equivalent region 21A and a second lead equivalent region 22A. The first lead-corresponding region 21A and the second lead-corresponding region 22A are portions of the lead frame 202 that become the above-mentioned first lead 21 and second lead 22 after the assembly substrate is fragmented, respectively. In FIG. 10, the approximate position of the element mounting region 21R in the first lead equivalent region 21A is shown by a dotted line. These plurality of sets, each including the first lead equivalent region 21A and the second lead equivalent region 22A, are connected to each other by the connecting portion 24 to form the lead frame 202 as a whole. These connecting portions 24 become the above-mentioned stretched portions 21s and 22h after the assembly substrate is individualized (see FIGS. 1 and 2).

The shapes of the first lead corresponding region 21A, the second lead corresponding region 22A, and the connecting portion 24 can be obtained, for example, by punching a plate-shaped member into a predetermined shape using a mold. A groove portion 21g that surrounds a part around the element mounting region 21R may be formed on the upper surface 21a of the first lead corresponding region 21A by, for example, partially etching the region. In this example, a groove 21h is also formed on the upper surface 21a of each first lead corresponding region 21A. Further, an arc-shaped groove portion 22g is formed on the upper surface 22a of each second lead corresponding region 22A. All or part of the grooves 21g, 21h and 22g may be formed by press working.

In the configuration illustrated in FIG. 11, the lower surface 21b of the first lead corresponding region 21A has a side edge groove portion 21k formed along three rectangular sides. The side edge groove portion 21k is recessed from the lower surface 21b of the first lead corresponding region 21A to the upper surface 21a side. Similarly, in the configuration illustrated in FIG. 11, a side edge groove portion 22k is provided on the lower surface 22b of the second lead corresponding region 22A along three rectangular sides. The side edge groove portion 22k is recessed from the lower surface 22b of the second lead corresponding region 22A to the upper surface 22a side. The side edge groove portions 21k and 22k can be formed by etching, pressing, or the like.

In the above-mentioned collective substrate, for example, after obtaining a lead frame with a resin molded body in which the resin body 30 is formed on the lead frame 202, the first light emitting element 41, the second light emitting element 42, and the wire are formed on the lead frame with the resin molded body. It can be obtained by arranging 43 or the like and further forming a light reflecting member 50, a wavelength conversion member 85, and a sealing member 75. The lead frame with a resin molded body can be formed, for example, by sandwiching the lead frame 202 with a mold provided with an upper mold and a lower mold, and pouring a resin material into the space inside the mold. For example, by the transfer molding method, it is possible to obtain a resin body 30 having a shape corresponding to the shape of the cavity formed between the upper mold and the upper surface of the lead frame 202.

As the base material of the resin body 30, a thermosetting resin, a thermoplastic resin, or the like can be used. Examples of the base material of the resin body 30 include an epoxy resin, a silicone resin, a modified epoxy resin such as a silicone-modified epoxy resin, a modified silicone resin such as an epoxy-modified silicone resin, an unsaturated polyester resin, a saturated polyester resin, a polyimide resin, and a modified polyimide. Resins such as resins, polyphthalamides (PPA), polycarbonate resins, polyphenylene sulfide (PPS), liquid crystal polymers (LCP), ABS resins, phenol resins, acrylic resins, and PBT resins. In particular, when a thermosetting resin such as an epoxy resin or a modified silicone resin is used, the first resin portion 31, the second resin portion 32, the third resin portion 33, and the fourth resin portion 34 are integrally formed of the same resin material. Easy and advantageous. A light-reflecting filler such as titanium oxide particles may be dispersed in the base material of the resin body 30.

After filling the material of the resin body 30 into the mold, the material of the resin body 30 is temporarily cured. After that, the lead frame 202 to which the temporarily cured resin material is attached is removed from the mold, and the resin material is finally cured at a temperature higher than that of the temporarily cured resin material. As a result, a lead frame with a resin molded body in which the resin body 30 is formed on the lead frame 202 can be obtained.

FIG. 12 shows the four light emitting structures 100L shown in FIG. 10 taken out from the lead frame with the resin molded body. As schematically shown in FIG. 12, the groove portion 21g provided on the upper surface 21a of the first lead equivalent region 21A and the groove portion 22g provided on the upper surface 22a of the second lead equivalent region 22A are filled with the material of the resin body 30. Will be done. In this example, the material of the resin body 30 is located on both the upper surface side and the lower surface side of the lead frame 202, and the first resin portion 31, the second resin portion 32, the third resin portion 33, and the fourth resin portion 34 are located. Is integrally formed from a common material. Therefore, peeling between the lead frame 202 and the resin body 30 is unlikely to occur.

Next, the first light emitting element 41 and the second light emitting element 42 are arranged in the element mounting region 21R by the joining member 44. Further, one of the positive electrode and the negative electrode of the first light emitting element 41 and the second light emitting element 42 is electrically connected to the first lead corresponding region 21A by the wire 43, and the other of the positive electrode and the negative electrode is connected to the second lead corresponding region 22A. It is electrically connected to the wire connection region 22R (see FIG. 3). If necessary, the protective element 60 is arranged in the recess 11.

As described above, one light emitting element may be arranged in the element mounting region 21R. In this case, as illustrated in FIG. 13, for example, the first light emitting element 41 may be arranged between two groove portions 21h provided on the upper surface 21a of the first lead corresponding region 21A.

Next, the light reflecting member 50 is formed inside each of the plurality of recesses 11 formed in the lead frame with the resin molded body. For example, first, an uncured material is applied between the inner wall surface of each recess 11 and the third resin portion 33 by potting or the like. In the present embodiment, since the third resin portion 33 is arranged in an annular shape around the element mounting region 21R, even if the uncured resin material is moved in the recess 11, the third resin portion 33 is moved to the center of the element mounting region 21R. The flow of the resin material of the above can be blocked by the third resin portion 33. Therefore, the position of the inner edge of the uncured resin material can be defined by the third resin portion 33, and the uncured resin material for forming the light reflecting member 50 can be appropriately arranged on the bottom surface 11b of the recess 11. After that, the uncured resin material applied to the predetermined region in the recess 11 is cured by heat, light, or the like.

As described with reference to FIG. 4 and the like, the light reflective member 50 is basically located between the inner wall surface of the recess 11 and the third resin portion 33. The light reflective member 50 may cover at least a part of the third resin portion 33 of the resin body 30. As shown in FIG. 14, the light reflecting member 50 may cover the portion (that is, the top portion) of the third resin portion 33 that is farthest from the bottom surface 11b of the recess 11. By covering the top of the third resin portion 33 with the light-reflecting member 50, the area in contact with the resin body 30 which is a part of the resin package 10 is increased, and as a result, the area between these members is increased. The joint can be made stronger.

As long as the side surfaces of the first light emitting element 41 and the second light emitting element 42 are not directly covered, it is acceptable that a part of the light reflecting member 50 is located in the element mounting region 21R. In this case, it is preferable that the light reflecting member 50 is separated from at least a part of the side surface of the light emitting element, and more preferably the light reflecting member 50 is separated from the entire side surface of the light emitting element. .. Since at least a part of the side surface of the light emitting element is separated from the side surface of the light emitting element, the light emitted from the side surface of the first light emitting element 41 or the light emitted from the side surface of the second light emitting element 42 is a light reflecting member. It is possible to suppress the reflection by the 50 and the absorption by the first light emitting element 41 or the second light emitting element 42.

FIG. 15 shows another example of the shape of the light reflecting member located in the recess 11. In the example shown in FIG. 15, one first light emitting element 41 is arranged in the element mounting region 21R as in the example shown in FIG. In the configuration illustrated in FIG. 15, the light reflecting member 50A located in the recess 11 includes a portion located in the element mounting region 21R beyond the third resin portion 33 of the resin body 30. In this example, a part of the light reflecting member 50A reaches near the first light emitting element 41. However, the side surface of the first light emitting element 41 is not covered with the light reflecting member 50A.

As in the example shown in FIG. 15, by forming the light reflecting member 50A so as to cover at least a part of the element mounting region 21R in the bottom surface 11b of the recess 11, the vicinity of the first light emitting element 41 is reached. A light reflective member 50A can be provided. At this time, by forming the light reflecting member 50A so that the side surface of the light emitting element (here, the first light emitting element 41) is not directly covered, the light emitted to the side of the light emitting element is reflected by the light reflecting member 50A. It is possible to suppress the absorption by the light emitting element. In particular, according to a configuration in which a plurality of groove portions 21h are provided in the first lead corresponding region 21A and a single light emitting element is arranged between these groove portions 21h, the position of the inner edge of the light reflecting member 50A is positioned at the plurality of groove portions 21h. Can be defined by. In other words, by providing the groove portion 21h on the bottom surface 11b of the recess 11, the side surface of the first light emitting element 41 is the light reflecting member 50A while a part of the light reflecting member 50A is positioned in the element mounting region 21R. It can be avoided to be covered directly by. By locating a part of the light-reflecting member 50A in the element mounting region 21R as in this example, the region of the recess 11 covered by the light-reflecting member 50 can be expanded, and the effect of further improving the brightness can be obtained. Can be obtained.

It is beneficial that the reflectance of the light-reflecting member 50 with respect to the light emitted from the light-emitting element (first light-emitting element 41 or second light-emitting element 42) is higher than the reflectance of the resin body 30. For example, the content of the light-reflecting filler such as titanium oxide dispersed in the light-reflecting member 50 is higher than the content of the light-reflecting filler dispersed in the resin body 30. The content of the reflective member in the light-reflecting member 50 is preferably 1.5 times or more, more preferably 2 times or more, more preferably 2 times or more the content of the light-reflecting substance in the resin body 30. It is more preferably 5 times or more. For example, the proportion of titanium oxide in the uncured resin material for forming the resin body 30 can be 15% by weight or more and 20% by weight or less. At this time, the proportion of titanium oxide in the uncured resin material for forming the light-reflecting member 50 may be 30% by weight or more and 60% by weight or less.

FIG. 16 shows an example of a light-reflecting member having a laminated structure. In the configuration illustrated in FIG. 16, the light-reflecting member 50B located in the recess 11 includes a first light-reflecting member 51 and a second light-reflecting member 52 located on the first light-reflecting member 51. include. As in this example, the light-reflecting member may have a laminated structure including two or more light-reflecting layers.

After forming the first light-reflecting member 51 in a predetermined region of the bottom surface 11b of the recess 11, forming the second light-reflecting member 52 on the first light-reflecting member 51 is a method of forming the second light-reflecting member 52 on the light-reflecting member 50B. It facilitates control of the shape of the surface, that is, the shape of the inclined surface 50s. The first light-reflecting member 51 may be entirely covered by the second light-reflecting member 52, or may have a portion exposed from the second light-reflecting member 52.

The material of the first light-reflecting member 51 and the material of the second light-reflecting member 52 may be the same or different. For example, the concentration of the light-reflecting filler may be different between the material of the first light-reflecting member 51 and the material of the second light-reflecting member 52. In this case, if the concentration of the light-reflecting filler in the first light-reflecting member 51 is lower than that of the second light-reflecting member 52, the material of the first light-reflecting member 51 is uncured. Since the viscosity in the above state is low, the formation of the first light-reflecting member 51 becomes easy, which is advantageous. Further, since the concentration of the light-reflecting filler in the second light-reflecting member 52 is relatively high, the reflectance of the second light-reflecting member 52 can be improved, and the light extraction efficiency can be improved.

The concentration of the light-reflecting filler in the first light-reflecting member 51 is preferably 3% or more lower in weight ratio than the concentration of the light-reflecting filler in the second light-reflecting member 52. More preferably, it is 5% or more lower. The difference in the concentration of the filler between the first light-reflecting member 51 and the second light-reflecting member 52 is preferably 30% or less, more preferably 10% or less in terms of weight ratio. By setting the filler concentration difference to 30% or less, it is possible to prevent the reflectance of the first light reflective member 51 from becoming extremely low.

In the examples shown in FIGS. 3, 14, 16, 16 and the like, the groove portion 21h of the first lead corresponding region 21A is formed at a position where it overlaps with the first light emitting element 41 or the second light emitting element 42. However, the arrangement of the groove portion 21h is not limited to this example, and may be, for example, between the first light emitting element 41 or the second light emitting element 42 and the third resin portion 33. According to such a configuration, in the groove portion 21h, when the uncured resin material for forming the light reflecting member 50 gets over the third resin portion 33 and enters the element mounting region 21R, the resin material becomes the first. It can exert a function of preventing the light emitting element 41 or the second light emitting element 42 from getting closer to the light emitting element 41. Further, in these examples, the groove portion 21h extends substantially parallel to the first direction (Y direction in FIG. 12) in which the first lead corresponding region 21A and the second lead corresponding region 22A are alternately arranged. One or more groove portions 21h may be formed so as to extend in a direction intersecting the first direction as illustrated in FIG. Even with such an arrangement of the groove portions 21h, when the uncured resin material gets over the third resin portion 33, the uncured resin material is prevented from further approaching the first light emitting element 41 or the second light emitting element 42. The function of performing the function can be exerted on the groove portion 21h.

After the light-reflecting member 50 is formed, an uncured material containing the first base material and one or more kinds of phosphors including the first phosphor is applied to the surface of the light-reflecting member 50 by potting or the like. After that, the wavelength conversion member 85 can be formed by curing the material applied to the surface of the light reflective member 50.

After forming the wavelength conversion member 85, the sealing member 75 located in the recess 11 is formed. Here, the inside of the recess 11 is filled with an uncured material containing a second base material by potting or the like, and the filled material is cured. As described above, the material of the sealing member 75 may contain at least one or more kinds of phosphors including the second phosphor in addition to the second base material. By curing the material filled in the recess 11, at least the sealing member 75 that covers the first light emitting element 41, the second light emitting element 42, and the third resin portion 33 can be formed. By forming the sealing member 75, an assembly substrate having a plurality of light emitting structures 100L can be obtained. If necessary, the covering members 751, 752 and the like may be formed between the placement of the light emitting element in the element mounting region 21R and the formation of the sealing member 75.

Next, the assembly substrate is individualized by cutting the assembly substrate at a position between two light emitting structures 100L adjacent to each other using a lead cut mold, a dicing saw, a laser beam, or the like. Typically, in the step of individualizing the assembly substrate, the lead frame 202 and the resin body 30 are cut together. By the above steps, the light emitting device 100 shown in FIG. 1 is obtained.

According to the following steps, a plurality of light emitting devices are prepared as samples of Example 1, and a plurality of light emitting devices are prepared as samples of Reference Example 1, and the spectrum and the whole between Example 1 and Reference Example 1 are prepared. Luminous flux comparison was performed.

(Example 1)
According to the above-mentioned steps, a plurality of light emitting devices having substantially the same structure as the light emitting device 100A shown in FIG. 8 were manufactured. However, here, a lead frame having the same structure as the lead frame 202 shown in FIGS. 10 and 11 is prepared, and one light emitting element is placed at a position between the two groove portions 21h in each element mounting region 21R. Placed. A covering member was formed on the upper surface of each of the light emitting elements. As a material for forming the resin body of the lead frame with the resin molded body, a resin material in which titanium oxide particles were dispersed in a silicone resin was used.

After arranging the light emitting element, the wire, and the like on the bottom surface of each recess of the lead frame with the resin molded body, the light reflecting member and the wavelength conversion member were sequentially formed according to the above procedure. As the material of the light-reflecting member, a resin material containing dimethyl silicone resin as a base material and particles of titanium oxide as a light-reflective filler was used.

Further, here, a phenylsilicone resin was used as the first base material for forming the wavelength conversion member. In the first base material, particles of G-YAG as a first phosphor and particles of silicon dioxide as a filler were dispersed. Here, the material of the wavelength conversion member was prepared so that the mass of the first phosphor was 100 and the mass of the filler was 0.8 when the mass of the first base material was 100. At this time, the mass ratio of the first phosphor to the entire material of the wavelength conversion member is calculated as 100 / (100 + 100 + 0.8) * 100 = 50 (%) (in the formula, "*" represents multiplication. .). In the following, for convenience of explanation, the mass ratio of the entire phosphor, which is converted from the content of the resin as the base material as 100, is referred to as “fluorescent concentration”.

Here, as a material for the covering member covering the upper surface of each LED chip, a resin material containing a third base material, a third phosphor, and silicon dioxide particles as a filler was used. A phenylsilicone resin was used as the third base material, and particles of SCASN as the third phosphor were dispersed in the third base material. At this time, the material of the covering member was prepared so that the mass of the third phosphor was 67.2 and the mass of the filler was 15.4 when the mass of the third base material was 100. Therefore, the concentration of the phosphor on the covering member of each sample of Example 1 is about 37%.

As the material of the sealing member covering the LED chip and the covering member, a phenylsilicone resin as a second base material, LAG particles as a second phosphor, and a resin material containing a filler were used. Here, in addition to the LAG particles as the second phosphor, the G-YAG particles were additionally dispersed in the second base material. At this time, when the mass of the second base material is 100, the mass of all the phosphors (G-YAG and LAG as the second phosphor) is 13.8, and the mass of the filler is 15.4. The material of the sealing member was prepared. Therefore, the concentration of the phosphor with respect to the sealing member of each sample of Example 1 is approximately 11%. According to the above procedure, a total of 28 light emitting devices were prepared as samples of Example 1.

(Reference example 1)
A plurality of light emitting devices were produced by almost the same procedure as the sample of Example 1. However, here, the wavelength conversion member was not formed on the light-reflecting member. In the formation of the covering member, the mass of the third phosphor was 68.0 when the mass of the third base material was 100. However, the concentration of the phosphor on the covering member of each sample of Reference Example 1 is about 37%, and it can be said that there is no substantial difference from the concentration of the phosphor on the covering member of each sample of Example 1. In the formation of the sealing member, when the mass of the second base material is 100, the total mass of G-YAG and LAG as the second phosphor is 26.8, and the mass of the filler is 15.4. The material of the sealing member was prepared so as to be. Therefore, the concentration of the phosphor with respect to the sealing member of each sample of Reference Example 1 is about 27%. By the above procedure, a total of 20 light emitting devices were prepared as samples of Reference Example 1.

(Comparison of spectra)
For each of the sample of Example 1 and the sample of Reference Example 1, the spectra at the time of lighting were measured, and the obtained spectra were compared. FIG. 18 shows the measurement result of the spectrum with respect to the sample of Example 1, and FIG. 19 shows the measurement result of the spectrum with respect to the sample of Reference Example 1. FIG. 18 is a graph in which 19 light emitting devices are randomly selected from 28 light emitting devices, the total luminous flux is measured for each of the 19 light emitting devices, and the average value of the measured values for each wavelength is plotted. be. The horizontal axis and the vertical axis in FIG. 18 represent the wavelength and the normalized total luminous flux, respectively. Here, the emission spectrum was measured by total luminous flux measurement using an integrating sphere by a method according to JIS-C-8152: 2014. Similarly, FIG. 19 is a graph obtained by measuring the total luminous flux for each of the 20 light emitting device units of Reference Example 1 and plotting the average value of the measured values for each wavelength.

FIG. 20 is a diagram in which the measurement result of the spectrum of the sample of Example 1 and the measurement result of the spectrum of the sample of Reference Example 1 are combined into one. In FIG. 20, the black circle plot shows the measurement result of the spectrum with respect to the sample of Example 1. On the other hand, the measurement result of the spectrum with respect to the sample of Reference Example 1 is shown in FIG. 20 as a graph of a solid curve. As can be seen from FIG. 20, no significant difference was confirmed between the sample of Example 1 and the sample of Reference Example 1. That is, it was found that the spectra of the sample of Example 1 and the sample of Reference Example 1 can be said to be substantially the same. That is, even if the content of the phosphor in the sealing member covering the first light emitting element is reduced, the same spectrum is reproduced by arranging the wavelength conversion member on the light reflecting member surrounding the first light emitting element. It turned out to be possible.

(Comparison of total luminous flux)
Next, the total luminous flux of each sample of Example 1 and each sample of Reference Example 1 was measured by a method according to JIS C 8152-1: 2014. The total luminous flux was measured for each sample of Example 1, and the average value of the obtained results was 36.7 lm. The input current and input voltage to each sample when measuring the total luminous flux were about 65 mA and 2.86 V, respectively.

Next, the total luminous flux was measured for each sample of Reference Example 1 in the same manner as for each sample of Example 1. The average value of the measurement results of the total luminous flux was 36.9 lm. FIG. 21 shows the measurement result of the total luminous flux according to the first embodiment and the measurement result of the total luminous flux according to the reference example 1 in one figure. It was found that a larger total luminous flux was obtained in Example 1 as compared with Reference Example 1.

According to the embodiment of the present disclosure, the wavelength conversion member is arranged on the light reflecting member surrounding one or more light emitting elements located in the element mounting region. This makes it possible to reduce the concentration of the phosphor in the sealing member without causing a substantial difference in the spectrum as compared with the configuration in which the wavelength conversion member is not provided on the light reflecting member. Therefore, it is possible to avoid the accumulation of the phosphor near the side surface of the light emitting element, and it is possible to increase the total luminous flux as compared with the configuration in which the wavelength conversion member is not provided on the light reflecting member.

The light emitting device according to the embodiment of the present disclosure is useful as a light source for various lighting fixtures, a light source for a backlight such as a liquid crystal display, a light source for various display devices such as advertisements or destination guidance, and a light source for a projector. The embodiments of the present disclosure can be advantageously applied to scanners such as facsimiles and copiers.

10 Resin package 11 Recessed part of resin package 21 1st lead 21R Element mounting area 22 2nd lead 22A 2nd lead equivalent area 30 Resin body 31 1st resin part of resin body 32 2nd resin part of resin body 33 Resin body 3rd resin part 41 1st light emitting element 42 2nd light emitting element 50, 50A, 50B Light reflecting member 51 1st light reflecting member 52 2nd light reflecting member 75, 76 Sealing member 85 Wavelength conversion member 100, 100A , 100B light emitting device 202 lead frame 751, 752 covering member

Claims (15)

A resin package having a plurality of leads including a first lead and a second lead, and a resin body including a first resin portion, a second resin portion, and a third resin portion, wherein the plurality of leads, the first resin, and the like. A resin package having a recess formed by the portion and the second resin portion, and
With at least one light emitting element
Light-reflecting member and
A wavelength conversion member containing a first base material and a first phosphor,
With a sealing member containing a second base material,
The first resin portion constitutes the outer surface of the resin package.
The second resin portion is located between the first lead and the second lead, and is located between the first lead and the second lead.
A part of the upper surface of the plurality of leads is located on the bottom surface of the recess.
The first lead has an element mounting region located on the bottom surface of the recess.
The third resin portion is located above the bottom surface of the recess and surrounds the element mounting region in an annular shape.
The at least one light emitting element is arranged in the element mounting region.
The light-reflecting member is located in the recess of the resin package between the inner wall surface of the recess and the third resin portion.
The wavelength conversion member is located on the light-reflecting member and is located on the light-reflecting member.
The sealing member is a light emitting device that covers at least one light emitting element and the wavelength conversion member in the recess of the resin package. The light emitting device according to claim 1, wherein the sealing member contains at least a second phosphor. The light emitting device according to claim 2, wherein the emission peak wavelength of the second phosphor is longer than the emission peak wavelength of the first phosphor. The light emitting device according to claim 2 or 3, wherein the concentration of all the phosphors in the sealing member is lower than the concentration of all the phosphors in the wavelength conversion member. The light emitting device according to claim 4, wherein the concentration of all the phosphors in the sealing member is 0.1 times or more and less than 0.5 times the concentration of all the phosphors in the wavelength conversion member. The at least one light emitting element includes a first light emitting element having an upper surface and a lower surface.
The first light emitting element has a support substrate and a semiconductor layer located on the support substrate and on the side opposite to the first lead with respect to the support substrate.
Claims 2 to 5, wherein the concentration of the second phosphor at the height of the upper surface of the first light emitting element is smaller than the concentration of the second phosphor at the height of the lower surface of the first light emitting element. The light emitting device according to any one. A covering member located on the upper surface of the first light emitting element is further provided.
The sealing member covers the covering member in the recess of the resin package.
The covering member contains a third base material and a third phosphor, and contains a third base material.
The light emitting device according to claim 6, wherein the emission peak wavelength of the third phosphor is longer than the emission peak wavelength of the first phosphor. When the refractive index of the second base material is n ₂ and the refractive index of the third base material is n ₃ , the second base material and the third base material have | n _{2 −} n ₃ | ≦ 0. The light emitting device according to claim 7, which satisfies the relationship of 05. When the refractive index of the first base material is n ₁ and the refractive index of the second base material is n ₂ , the first base material and the second base material are | n _{1 −} n ₂ | ≦ 0. The light emitting device according to any one of claims 1 to 8, which satisfies the relationship of 05. The light emitting device according to any one of claims 1 to 9, wherein the light reflecting member contains a fourth base material having a refractive index smaller than that of the first base material. The light emitting device according to any one of claims 1 to 10, wherein the wavelength conversion member is separated from the light emitting element. The light emitting device according to any one of claims 1 to 11, wherein the wavelength conversion member is separated from the plurality of leads. The light emitting device according to any one of claims 1 to 12, wherein the wavelength conversion member has a shape that continuously surrounds the light emitting element in a plan view. The light emitting device according to any one of claims 1 to 13, wherein the wavelength conversion member covers at least a part of the third resin portion of the resin body. The light emitting device according to any one of claims 1 to 14, wherein the surface of the light reflecting member has a concave shape recessed toward the first resin portion of the resin body.

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