Nothing Special   »   [go: up one dir, main page]

DE69019250D1 - Verfahren und Vorrichtung zur chemischen Dampfphasenabscheidung. - Google Patents

Verfahren und Vorrichtung zur chemischen Dampfphasenabscheidung.

Info

Publication number
DE69019250D1
DE69019250D1 DE69019250T DE69019250T DE69019250D1 DE 69019250 D1 DE69019250 D1 DE 69019250D1 DE 69019250 T DE69019250 T DE 69019250T DE 69019250 T DE69019250 T DE 69019250T DE 69019250 D1 DE69019250 D1 DE 69019250D1
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
chemical
deposition
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69019250T
Other languages
English (en)
Other versions
DE69019250T2 (de
Inventor
Hitoshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69019250D1 publication Critical patent/DE69019250D1/de
Application granted granted Critical
Publication of DE69019250T2 publication Critical patent/DE69019250T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE69019250T 1989-07-20 1990-07-19 Verfahren und Vorrichtung zur chemischen Dampfphasenabscheidung. Expired - Fee Related DE69019250T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18600889 1989-07-20

Publications (2)

Publication Number Publication Date
DE69019250D1 true DE69019250D1 (de) 1995-06-14
DE69019250T2 DE69019250T2 (de) 1995-09-07

Family

ID=16180759

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69019250T Expired - Fee Related DE69019250T2 (de) 1989-07-20 1990-07-19 Verfahren und Vorrichtung zur chemischen Dampfphasenabscheidung.

Country Status (4)

Country Link
US (1) US5091207A (de)
EP (1) EP0409603B1 (de)
JP (1) JP2888253B2 (de)
DE (1) DE69019250T2 (de)

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置
US5427625A (en) * 1992-12-18 1995-06-27 Tokyo Electron Kabushiki Kaisha Method for cleaning heat treatment processing apparatus
US5891253A (en) * 1993-05-14 1999-04-06 Applied Materials, Inc. Corrosion resistant apparatus
US5424097A (en) * 1993-09-30 1995-06-13 Specialty Coating Systems, Inc. Continuous vapor deposition apparatus
US5451258A (en) * 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
US5648113A (en) * 1994-09-30 1997-07-15 International Business Machines Corporation Aluminum oxide LPCVD system
US5879808A (en) * 1995-10-27 1999-03-09 Alpha Metals, Inc. Parylene polymer layers
US5534068A (en) * 1995-10-27 1996-07-09 Specialty Coating Systems, Inc. Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement
US5980638A (en) * 1997-01-30 1999-11-09 Fusion Systems Corporation Double window exhaust arrangement for wafer plasma processor
US5806319A (en) * 1997-03-13 1998-09-15 Wary; John Method and apparatus for cryogenically cooling a deposition chamber
US6051276A (en) * 1997-03-14 2000-04-18 Alpha Metals, Inc. Internally heated pyrolysis zone
US5841005A (en) * 1997-03-14 1998-11-24 Dolbier, Jr.; William R. Parylene AF4 synthesis
JP5010620B2 (ja) * 1998-04-09 2012-08-29 公益財団法人国際科学振興財団 プロセス装置
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US6733590B1 (en) * 1999-05-03 2004-05-11 Seagate Technology Llc. Method and apparatus for multilayer deposition utilizing a common beam source
US6824825B2 (en) * 1999-09-13 2004-11-30 Tokyo Electron Limited Method for depositing metallic nitride series thin film
KR100330749B1 (ko) * 1999-12-17 2002-04-03 서성기 반도체 박막증착장치
KR100693691B1 (ko) * 2000-04-25 2007-03-09 동경 엘렉트론 주식회사 금속 필름의 침착방법 및 초임계 건조/세척 모듈을포함하는 금속침착 복합공정장치
KR100332313B1 (ko) * 2000-06-24 2002-04-12 서성기 Ａｌｄ 박막증착장치 및 증착방법
WO2002045871A1 (en) * 2000-12-06 2002-06-13 Angstron Systems, Inc. System and method for modulated ion-induced atomic layer deposition (mii-ald)
US6630201B2 (en) * 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US20020144786A1 (en) * 2001-04-05 2002-10-10 Angstron Systems, Inc. Substrate temperature control in an ALD reactor
KR100777892B1 (ko) * 2001-04-10 2007-11-21 동경 엘렉트론 주식회사 반도체 기판 처리용 고압 챔버
US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
US6461436B1 (en) * 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
US6670071B2 (en) * 2002-01-15 2003-12-30 Quallion Llc Electric storage battery construction and method of manufacture
WO2003064065A1 (en) * 2002-01-25 2003-08-07 Supercritical Systems Inc. Method for reducing the formation of contaminants during supercritical carbon dioxide processes
US7175713B2 (en) * 2002-01-25 2007-02-13 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US7163587B2 (en) * 2002-02-08 2007-01-16 Axcelis Technologies, Inc. Reactor assembly and processing method
US6924086B1 (en) * 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
AU2003217547A1 (en) * 2002-02-15 2003-09-09 Supercritical Systems Inc. Drying resist with a solvent bath and supercritical co2
US20050227187A1 (en) * 2002-03-04 2005-10-13 Supercritical Systems Inc. Ionic fluid in supercritical fluid for semiconductor processing
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
CN1642665A (zh) * 2002-03-22 2005-07-20 东京毅力科创株式会社 用超临界工艺清除杂质
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US7192486B2 (en) * 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
US6955725B2 (en) * 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6884296B2 (en) * 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
US6967154B2 (en) * 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US20040040503A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040502A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US20040163590A1 (en) * 2003-02-24 2004-08-26 Applied Materials, Inc. In-situ health check of liquid injection vaporizer
US20040173317A1 (en) * 2003-03-07 2004-09-09 Ke-Wei Tung Resist stripper system
KR101416781B1 (ko) * 2003-03-14 2014-07-08 아익스트론 인코포레이티드 원자 층 증착을 위한 방법 및 장치
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
JP4423914B2 (ja) * 2003-05-13 2010-03-03 東京エレクトロン株式会社 処理装置及びその使用方法
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7344755B2 (en) * 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
US7056806B2 (en) * 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) * 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) * 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7472432B2 (en) * 2003-12-30 2009-01-06 Letty Ann Owen Bathtub insert “Take-Five”
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US20050249873A1 (en) * 2004-05-05 2005-11-10 Demetrius Sarigiannis Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
US8133554B2 (en) * 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20060102208A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited System for removing a residue from a substrate using supercritical carbon dioxide processing
US20060102591A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method and system for treating a substrate using a supercritical fluid
US20060102590A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry
US20060102204A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for removing a residue from a substrate using supercritical carbon dioxide processing
US7491036B2 (en) * 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US20060165873A1 (en) * 2005-01-25 2006-07-27 Micron Technology, Inc. Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes
US20060180174A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator
US20060180572A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Removal of post etch residue for a substrate with open metal surfaces
US7291565B2 (en) * 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US20060185693A1 (en) * 2005-02-23 2006-08-24 Richard Brown Cleaning step in supercritical processing
US20060185694A1 (en) * 2005-02-23 2006-08-24 Richard Brown Rinsing step in supercritical processing
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
JP4894753B2 (ja) * 2005-03-29 2012-03-14 株式会社ジェイテクト 超仕上砥石及びそれを用いた超仕上加工方法
US20060226117A1 (en) * 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US7442636B2 (en) * 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) * 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US20060223899A1 (en) * 2005-03-30 2006-10-05 Hillman Joseph T Removal of porogens and porogen residues using supercritical CO2
US20060219268A1 (en) * 2005-03-30 2006-10-05 Gunilla Jacobson Neutralization of systemic poisoning in wafer processing
US20060237138A1 (en) * 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US20060255012A1 (en) * 2005-05-10 2006-11-16 Gunilla Jacobson Removal of particles from substrate surfaces using supercritical processing
US7789971B2 (en) * 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US20070000519A1 (en) * 2005-06-30 2007-01-04 Gunilla Jacobson Removal of residues for low-k dielectric materials in wafer processing
US20070012337A1 (en) * 2005-07-15 2007-01-18 Tokyo Electron Limited In-line metrology for supercritical fluid processing
US7775219B2 (en) * 2006-12-29 2010-08-17 Applied Materials, Inc. Process chamber lid and controlled exhaust
US8074677B2 (en) * 2007-02-26 2011-12-13 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7846497B2 (en) * 2007-02-26 2010-12-07 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7775236B2 (en) * 2007-02-26 2010-08-17 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
JP4473344B2 (ja) * 2008-07-15 2010-06-02 キヤノンアネルバ株式会社 プラズマ処理方法及びプラズマ処理装置
JP5231117B2 (ja) * 2008-07-24 2013-07-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
CN102828167B (zh) * 2011-06-13 2015-02-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种排气方法、装置及基片处理设备
TWI719473B (zh) * 2011-10-05 2021-02-21 美商應用材料股份有限公司 對稱電漿處理腔室
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
EP2662471A1 (de) * 2012-05-08 2013-11-13 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Einstellbares chemisches Dampfabscheidungsverfahren
US20130340681A1 (en) * 2012-06-21 2013-12-26 Tel Solar Ag Reduced pressure processing chamber and exhaust arrangement
TW201408811A (zh) * 2012-08-28 2014-03-01 Univ St Johns 多流向原子層沈積系統
US10401164B2 (en) * 2012-10-16 2019-09-03 Exxonmobil Research And Engineering Company Sensor network design and inverse modeling for reactor condition monitoring
JP6017396B2 (ja) * 2012-12-18 2016-11-02 東京エレクトロン株式会社 薄膜形成方法および薄膜形成装置
US9605346B2 (en) * 2014-03-28 2017-03-28 Lam Research Corporation Systems and methods for pressure-based liquid flow control
US9920425B2 (en) * 2014-08-13 2018-03-20 Toshiba Memory Corporation Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
KR102477302B1 (ko) * 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3603284A (en) * 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
DE2125085C3 (de) * 1971-05-19 1979-02-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von einseitig geschlossenen Rohren aus Halbleitermaterial
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
GB2175016B (en) * 1985-05-11 1990-01-24 Barr & Stroud Ltd Optical coating
US4703718A (en) * 1985-11-29 1987-11-03 Rca Corporation Vapor deposition apparatus and method of using same
JPS63238281A (ja) * 1987-03-27 1988-10-04 Hitachi Ltd ウエ−ハ処理装置及びそれに使用する微圧測定器

Also Published As

Publication number Publication date
EP0409603B1 (de) 1995-05-10
US5091207A (en) 1992-02-25
EP0409603A1 (de) 1991-01-23
JP2888253B2 (ja) 1999-05-10
DE69019250T2 (de) 1995-09-07
JPH03130367A (ja) 1991-06-04

Similar Documents

Publication Publication Date Title
DE69019250D1 (de) Verfahren und Vorrichtung zur chemischen Dampfphasenabscheidung.
DE68917870D1 (de) Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung.
DE69510138D1 (de) Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung
DE69325983D1 (de) Verfahren und Vorrichtung zur chemischen Dampfabscheidung
DE69324849D1 (de) Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung
DE69504762D1 (de) Vorrichtung zur chemischen Gasphasenabscheidung
DE3786840D1 (de) Vorrichtung und verfahren zur oberflaechenbehandlung mit plasma.
DE69525483D1 (de) Vorrichtung und Verfahren zur Zersetzung von chemischen Verbindungen
DE3854111D1 (de) Vorrichtung und verfahren zur behandlung mit plasma.
DE69003175D1 (de) Verfahren und Vorrichtung zur Plasmaaussenabscheidung von hydroxylionenfreier Silika.
DE3750808D1 (de) Verfahren und Vorrichtung zur Ionenätzung.
DE69000870D1 (de) Verfahren und vorrichtung zur abfallbeseitigung.
DE69506549D1 (de) Vorrichtung und verfahren zur abgabe von chemischen lösungen
DE69013790D1 (de) Verfahren und Vorrichtung zur Positionsbestimmung.
DE59007051D1 (de) Verfahren und vorrichtung zur dämpfung von bewegungsabläufen.
DE3861549D1 (de) Verfahren und vorrichtung zur verdunstung einer loesung.
DE69021955D1 (de) Verfahren und Vorrichtung zur gegenseitigen Verbindung von Rohren.
DE69018838D1 (de) Verfahren und Vorrichtung zur Oberflächenanalyse.
DE69102311D1 (de) Vorrichtung und Verfahren zur Oberflächenreinigung.
DE69008477D1 (de) Verfahren und Vorrichtung zur Zielerkennung.
DE69016809D1 (de) Verfahren und Vorrichtung zur Verdampfung und Zuführung von organometallischen Verbindungen.
DE68924563D1 (de) Verfahren und Vorrichtung zur Oberflächenanalyse.
DE69104968D1 (de) Verfahren und Vorrichtung zur Laserbearbeitung.
DE68917550D1 (de) Verfahren und Vorrichtung zur Plasmabehandlung.
DE69009368D1 (de) Vorrichtung und Verfahren zur Drahtbearbeitung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee