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DE69016809D1 - Verfahren und Vorrichtung zur Verdampfung und Zuführung von organometallischen Verbindungen. - Google Patents

Verfahren und Vorrichtung zur Verdampfung und Zuführung von organometallischen Verbindungen.

Info

Publication number
DE69016809D1
DE69016809D1 DE69016809T DE69016809T DE69016809D1 DE 69016809 D1 DE69016809 D1 DE 69016809D1 DE 69016809 T DE69016809 T DE 69016809T DE 69016809 T DE69016809 T DE 69016809T DE 69016809 D1 DE69016809 D1 DE 69016809D1
Authority
DE
Germany
Prior art keywords
evaporating
organometallic compounds
supplying organometallic
supplying
compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69016809T
Other languages
English (en)
Other versions
DE69016809T2 (de
Inventor
Hiroshi Mihira
Tetsuo Shimizu
Kazuhiro Hirahara
Toshinobu Ishihara
Seiki Takaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Stec KK
Original Assignee
Shin Etsu Chemical Co Ltd
Stec KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Stec KK filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69016809D1 publication Critical patent/DE69016809D1/de
Publication of DE69016809T2 publication Critical patent/DE69016809T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/918—Single-crystal waveguide
    • Y10S117/919—Organic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69016809T 1989-03-29 1990-03-28 Verfahren und Vorrichtung zur Verdampfung und Zuführung von organometallischen Verbindungen. Expired - Lifetime DE69016809T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1077020A JP2538042B2 (ja) 1989-03-29 1989-03-29 有機金属化合物の気化供給方法とその装置

Publications (2)

Publication Number Publication Date
DE69016809D1 true DE69016809D1 (de) 1995-03-23
DE69016809T2 DE69016809T2 (de) 1995-07-06

Family

ID=13622074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016809T Expired - Lifetime DE69016809T2 (de) 1989-03-29 1990-03-28 Verfahren und Vorrichtung zur Verdampfung und Zuführung von organometallischen Verbindungen.

Country Status (4)

Country Link
US (1) US5377616A (de)
EP (1) EP0390127B1 (de)
JP (1) JP2538042B2 (de)
DE (1) DE69016809T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615147B1 (de) * 1992-01-16 1998-08-05 Texas Instruments Incorporated Mikromechanische, verformbare Spiegelvorrichtungen (-DMD-)
US5602671A (en) * 1990-11-13 1997-02-11 Texas Instruments Incorporated Low surface energy passivation layer for micromechanical devices
JP2797233B2 (ja) * 1992-07-01 1998-09-17 富士通株式会社 薄膜成長装置
JPH06196419A (ja) * 1992-12-24 1994-07-15 Canon Inc 化学気相堆積装置及びそれによる半導体装置の製造方法
US5399200A (en) * 1994-03-10 1995-03-21 Stauffer; Craig M. Module in an integrated delivery system for chemical vapors from liquid sources
WO2000065127A1 (en) * 1999-04-27 2000-11-02 Tokyo Electron Limited Apparatus and method for delivery of vapor to a cvd chamber
US20030054105A1 (en) * 2001-08-14 2003-03-20 Hammond Robert H. Film growth at low pressure mediated by liquid flux and induced by activated oxygen
EP1289025A1 (de) * 2001-08-30 2003-03-05 Universite De Neuchatel Abscheidungsverfahren von einer Oxydschicht auf einem Substrat und dieses verwendende photovoltaische Zelle
US7329554B2 (en) * 2001-11-08 2008-02-12 Midwest Research Institute Reactive codoping of GaAlInP compound semiconductors
US6790475B2 (en) * 2002-04-09 2004-09-14 Wafermasters Inc. Source gas delivery
TW200407328A (en) * 2002-09-19 2004-05-16 Shinetsu Chemical Co Liquid organometallic compound vaporizing/feeding system
JP3821227B2 (ja) * 2002-09-19 2006-09-13 信越化学工業株式会社 有機金属化合物の気化供給装置
WO2007143743A2 (en) * 2006-06-09 2007-12-13 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
US20080018004A1 (en) * 2006-06-09 2008-01-24 Air Products And Chemicals, Inc. High Flow GaCl3 Delivery
JP4605790B2 (ja) * 2006-06-27 2011-01-05 株式会社フジキン 原料の気化供給装置及びこれに用いる圧力自動調整装置。
JP4873169B2 (ja) * 2007-06-01 2012-02-08 信越化学工業株式会社 固体有機金属化合物の充填方法
US9543468B2 (en) 2010-10-12 2017-01-10 Alliance For Sustainable Energy, Llc High bandgap III-V alloys for high efficiency optoelectronics
WO2012153455A1 (ja) 2011-05-10 2012-11-15 株式会社フジキン 流量モニタ付圧力式流量制御装置
JP5755958B2 (ja) 2011-07-08 2015-07-29 株式会社フジキン 半導体製造装置の原料ガス供給装置
JP5647083B2 (ja) 2011-09-06 2014-12-24 株式会社フジキン 原料濃度検出機構を備えた原料気化供給装置
DE102012022744B4 (de) * 2012-11-21 2016-11-24 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Vorrichtung zum Einstellen einer Gasphase in einer Reaktionskammer
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
EP3162914A1 (de) * 2015-11-02 2017-05-03 IMEC vzw Vorrichtung und verfahren zur bereitstellung eines gasförmigen vorläufers an eine reaktionskammer
US10483498B2 (en) * 2016-04-22 2019-11-19 Universal Display Corporation High efficiency vapor transport sublimation source using baffles coated with source material
US10983537B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller
WO2022181885A1 (ko) * 2021-02-26 2022-09-01 (주)지오엘리먼트 고순도 전구체를 위한 기화 시스템
KR20240052767A (ko) 2021-09-09 2024-04-23 가부시키가이샤 프로테리아루 기화기

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
US4293594A (en) * 1980-08-22 1981-10-06 Westinghouse Electric Corp. Method for forming conductive, transparent coating on a substrate
JPS6055478B2 (ja) * 1982-10-19 1985-12-05 松下電器産業株式会社 気相成長方法
US4517220A (en) * 1983-08-15 1985-05-14 Motorola, Inc. Deposition and diffusion source control means and method
JPS60102251U (ja) * 1983-12-14 1985-07-12 日本電気株式会社 気相成長装置
FR2569207B1 (fr) * 1984-08-14 1986-11-14 Mellet Robert Procede et dispositif d'obtention d'un courant gazeux contenant un compose a l'etat de vapeur, utilisable notamment pour introduire ce compose dans un reacteur d'epitaxie
US4619844A (en) * 1985-01-22 1986-10-28 Fairchild Camera Instrument Corp. Method and apparatus for low pressure chemical vapor deposition
JPH0699230B2 (ja) * 1985-03-26 1994-12-07 株式会社東芝 有機金属熱分解法気相成長装置
JPS6355194A (ja) * 1986-08-26 1988-03-09 Sumitomo Chem Co Ltd 有機金属化合物の充填方法
JPH0639705B2 (ja) * 1987-06-19 1994-05-25 日本電信電話株式会社 ガス供給装置

Also Published As

Publication number Publication date
JPH02255595A (ja) 1990-10-16
EP0390127A2 (de) 1990-10-03
JP2538042B2 (ja) 1996-09-25
US5377616A (en) 1995-01-03
DE69016809T2 (de) 1995-07-06
EP0390127B1 (de) 1995-02-15
EP0390127A3 (de) 1991-01-23

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Legal Events

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8364 No opposition during term of opposition