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DE602005019689D1 - Belichtungsvorrichtung und messeinrichtung für eine projektionslinse - Google Patents

Belichtungsvorrichtung und messeinrichtung für eine projektionslinse

Info

Publication number
DE602005019689D1
DE602005019689D1 DE602005019689T DE602005019689T DE602005019689D1 DE 602005019689 D1 DE602005019689 D1 DE 602005019689D1 DE 602005019689 T DE602005019689 T DE 602005019689T DE 602005019689 T DE602005019689 T DE 602005019689T DE 602005019689 D1 DE602005019689 D1 DE 602005019689D1
Authority
DE
Germany
Prior art keywords
immersion liquid
immersion
projection
apparatus includes
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005019689T
Other languages
English (en)
Inventor
Albrecht Ehrmann
Ulrich Wegmann
Rainer Hoch
Joerg Mallmann
Karl Heinz Schuster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of DE602005019689D1 publication Critical patent/DE602005019689D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Eye Examination Apparatus (AREA)
  • Video Image Reproduction Devices For Color Tv Systems (AREA)
  • Indication In Cameras, And Counting Of Exposures (AREA)
DE602005019689T 2004-01-20 2005-01-13 Belichtungsvorrichtung und messeinrichtung für eine projektionslinse Active DE602005019689D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53778404P 2004-01-20 2004-01-20
PCT/EP2005/000246 WO2005071491A2 (en) 2004-01-20 2005-01-13 Exposure apparatus and measuring device for a projection lens

Publications (1)

Publication Number Publication Date
DE602005019689D1 true DE602005019689D1 (de) 2010-04-15

Family

ID=34807120

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005019689T Active DE602005019689D1 (de) 2004-01-20 2005-01-13 Belichtungsvorrichtung und messeinrichtung für eine projektionslinse

Country Status (9)

Country Link
US (5) US20070070316A1 (de)
EP (1) EP1706793B1 (de)
JP (3) JP4843503B2 (de)
KR (2) KR101204157B1 (de)
CN (1) CN1938646B (de)
AT (1) ATE459898T1 (de)
DE (1) DE602005019689D1 (de)
TW (1) TW200525309A (de)
WO (1) WO2005071491A2 (de)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3953460B2 (ja) 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ投影装置
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
KR101288767B1 (ko) 2003-02-26 2013-07-23 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR20050110033A (ko) 2003-03-25 2005-11-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
ATE426914T1 (de) 2003-04-07 2009-04-15 Nikon Corp Belichtungsgerat und verfahren zur herstellung einer vorrichtung
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
EP2717098B1 (de) 2003-04-10 2015-05-13 Nikon Corporation System zur Umgebungskontrolle mittels Vakuum-Rückförderung für eine Immersionslithografievorrichtung
EP1611482B1 (de) 2003-04-10 2015-06-03 Nikon Corporation Flüssigkeitsabfluss für verwendung in einer immersionslithographievorrichtung
KR20140139139A (ko) 2003-04-10 2014-12-04 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
JP4837556B2 (ja) 2003-04-11 2011-12-14 株式会社ニコン 液浸リソグラフィにおける光学素子の洗浄方法
KR101612681B1 (ko) 2003-04-11 2016-04-15 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
EP1614000B1 (de) 2003-04-17 2012-01-18 Nikon Corporation Lithographisches Immersionsgerät
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TW201515064A (zh) 2003-05-23 2015-04-16 尼康股份有限公司 曝光方法及曝光裝置以及元件製造方法
EP2453465A3 (de) 2003-05-28 2018-01-03 Nikon Corporation Belichtungsverfahren, Belichtungsvorrichtung und Verfahren zur Herstellung einer Vorrichtung
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261741A3 (de) 2003-06-11 2011-05-25 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
TW201818451A (zh) 2003-06-13 2018-05-16 日商尼康股份有限公司 曝光裝置、元件製造方法
KR101265454B1 (ko) 2003-06-19 2013-05-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
EP2466382B1 (de) 2003-07-08 2014-11-26 Nikon Corporation Wafertisch für die Immersionslithografie
CN102944981A (zh) 2003-07-09 2013-02-27 株式会社尼康 曝光装置、器件制造方法
WO2005006418A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
ATE513309T1 (de) 2003-07-09 2011-07-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementeherstellung
EP1650787A4 (de) 2003-07-25 2007-09-19 Nikon Corp Untersuchungsverfahren und untersuchungseinrichtung für ein optisches projektionssystem und herstellungsverfahren für ein optisches projektionssystem
EP1503244A1 (de) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung
EP1653501B1 (de) 2003-07-28 2012-09-19 Nikon Corporation Belichtungsvorrichtung, bauelemente-herstellungsverfahren und steuerverfahren für eine belichtungsvorrichtung
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG145780A1 (en) 2003-08-29 2008-09-29 Nikon Corp Exposure apparatus and device fabricating method
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101288140B1 (ko) 2003-09-03 2013-07-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
EP2837969B1 (de) 2003-09-29 2016-04-20 Nikon Corporation Belichtungsvorrichtung, Belichtungsverfahren und Verfahren zur Herstellung der Vorrichtung
KR101203028B1 (ko) 2003-10-08 2012-11-21 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광 방법, 디바이스 제조 방법
WO2005036623A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
TWI553701B (zh) 2003-10-09 2016-10-11 尼康股份有限公司 Exposure apparatus and exposure method, component manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054447B2 (en) 2003-12-03 2011-11-08 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US7982857B2 (en) 2003-12-15 2011-07-19 Nikon Corporation Stage apparatus, exposure apparatus, and exposure method with recovery device having lyophilic portion
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
DE602005019689D1 (de) 2004-01-20 2010-04-15 Zeiss Carl Smt Ag Belichtungsvorrichtung und messeinrichtung für eine projektionslinse
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
EP1713114B1 (de) 2004-02-03 2018-09-19 Nikon Corporation Belichtungsvorrichtung und verfahren zur herstellung einer vorrichtung
KR20190011830A (ko) 2004-02-04 2019-02-07 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4797984B2 (ja) * 2004-02-19 2011-10-19 株式会社ニコン 露光装置及びデバイス製造方法
KR101851511B1 (ko) 2004-03-25 2018-04-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1747499A2 (de) 2004-05-04 2007-01-31 Nikon Corporation Vorrichtung und verfahren zur bereitstellung eines fluids für die immersionslithographie
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7796274B2 (en) 2004-06-04 2010-09-14 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
KR101512884B1 (ko) 2004-06-09 2015-04-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP2005353762A (ja) 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 半導体製造装置及びパターン形成方法
US20060001851A1 (en) * 2004-07-01 2006-01-05 Grant Robert B Immersion photolithography system
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4894515B2 (ja) 2004-07-12 2012-03-14 株式会社ニコン 露光装置、デバイス製造方法、及び液体検出方法
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4983257B2 (ja) 2004-08-18 2012-07-25 株式会社ニコン 露光装置、デバイス製造方法、計測部材、及び計測方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7782440B2 (en) * 2004-11-18 2010-08-24 Carl Zeiss Smt Ag Projection lens system of a microlithographic projection exposure installation
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
EP1863070B1 (de) 2005-01-31 2016-04-27 Nikon Corporation Belichtungsvorrichtung und verfahren zur herstellung einer vorrichtung
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7944628B2 (en) * 2005-03-09 2011-05-17 Carl Zeiss Smt Gmbh Optical element unit
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP5069232B2 (ja) 2005-07-25 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の投影対物レンズ
JP2007103841A (ja) * 2005-10-07 2007-04-19 Toshiba Corp 半導体装置の製造方法
JP2007142366A (ja) * 2005-10-18 2007-06-07 Canon Inc 露光装置及びデバイス製造方法
JP4899473B2 (ja) * 2005-12-28 2012-03-21 株式会社ニコン 結像光学系、露光装置及びデバイスの製造方法
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7538858B2 (en) 2006-01-11 2009-05-26 Micron Technology, Inc. Photolithographic systems and methods for producing sub-diffraction-limited features
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US8068208B2 (en) 2006-12-01 2011-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving immersion scanner overlay performance
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US9013672B2 (en) * 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
NL1035970A1 (nl) * 2007-09-28 2009-04-03 Asml Holding Nv Lithographic Apparatus and Device Manufacturing Method.
NL1036186A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL1036596A1 (nl) * 2008-02-21 2009-08-24 Asml Holding Nv Re-flow and buffer system for immersion lithography.
JP5097166B2 (ja) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置の動作方法
EP2136250A1 (de) * 2008-06-18 2009-12-23 ASML Netherlands B.V. Lithographische Vorrichtung und Verfahren
NL2003341A (en) * 2008-08-22 2010-03-10 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL2003392A (en) * 2008-09-17 2010-03-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
JP5127742B2 (ja) * 2009-02-18 2013-01-23 パナソニック株式会社 パターン形成方法
US8570055B2 (en) 2009-12-31 2013-10-29 Mapper Lithography Ip B.V. Capacitive sensing system
EP2381310B1 (de) 2010-04-22 2015-05-06 ASML Netherlands BV Flüssigkeitshandhabungsstruktur und lithographischer Apparat
JP5127891B2 (ja) * 2010-07-28 2013-01-23 パナソニック株式会社 半導体製造装置
SG188036A1 (en) 2011-08-18 2013-03-28 Asml Netherlands Bv Lithographic apparatus, support table for a lithographic apparatus and device manufacturing method
JP6122252B2 (ja) * 2012-05-01 2017-04-26 キヤノン株式会社 露光装置及びデバイスの製造方法
WO2015028202A1 (en) * 2013-08-30 2015-03-05 Asml Netherlands B.V. Immersion lithographic apparatus
JP6433264B2 (ja) * 2014-11-27 2018-12-05 株式会社ディスコ 透過レーザービームの検出方法
JP6640040B2 (ja) * 2016-06-23 2020-02-05 株式会社ニューフレアテクノロジー 伝熱板および描画装置
CN112326652B (zh) * 2017-09-20 2021-09-03 深圳市真迈生物科技有限公司 成像方法、控制序列测定反应的方法、装置及系统
JP2024515487A (ja) * 2021-04-21 2024-04-10 エーエスエムエル ネザーランズ ビー．ブイ． 温度調節システム、リソグラフィ装置及びオブジェクトを温度調節するための方法
EP4102297A1 (de) * 2021-06-10 2022-12-14 ASML Netherlands B.V. Temperierungssystem, lithografische vorrichtung und verfahren zum temperieren eines objekts
CN114910986A (zh) * 2022-04-22 2022-08-16 上海酷聚科技有限公司 一种液体透镜

Family Cites Families (237)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (de)
DE224448C (de)
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
JPS5919912Y2 (ja) 1978-08-21 1984-06-08 清水建設株式会社 複合熱交換器
US4269067A (en) 1979-05-18 1981-05-26 International Business Machines Corporation Method and apparatus for focusing elastic waves converted from thermal energy
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS6113794Y2 (de) 1981-01-16 1986-04-28
JPS57152129A (en) 1981-03-13 1982-09-20 Sanyo Electric Co Ltd Developing method of resist
JPS57152129U (de) 1981-03-17 1982-09-24
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS57153433U (de) 1981-03-20 1982-09-27
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
JPS61113376A (ja) 1984-11-07 1986-05-31 Sony Corp テレビジヨン信号の動き検出装置
JPS6265326A (ja) * 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6265326U (de) 1985-10-16 1987-04-23
JPH0782981B2 (ja) * 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
JPS63157419A (ja) * 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH033222Y2 (de) 1986-12-23 1991-01-28
JPS63157419U (de) 1987-03-31 1988-10-14
JPH0521314Y2 (de) 1987-04-23 1993-06-01
JP2774574B2 (ja) * 1989-05-30 1998-07-09 キヤノン株式会社 露光装置
DE68921687T2 (de) 1988-09-02 1995-08-03 Canon K.K., Tokio/Tokyo Belichtungseinrichtung.
JPH0629204Y2 (ja) 1989-10-19 1994-08-10 株式会社ヤマウ 止水目地
DE69118315T2 (de) 1990-11-01 1996-08-14 Canon Kk Waferhaltebefestigung für Belichtungsgerät
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JP3200874B2 (ja) 1991-07-10 2001-08-20 株式会社ニコン 投影露光装置
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH0629204A (ja) 1992-07-08 1994-02-04 Fujitsu Ltd レジスト現像方法及び装置
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5738165A (en) * 1993-05-07 1998-04-14 Nikon Corporation Substrate holding apparatus
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) * 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) * 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US6721034B1 (en) * 1994-06-16 2004-04-13 Nikon Corporation Stage unit, drive table, and scanning exposure apparatus using the same
JP3484684B2 (ja) 1994-11-01 2004-01-06 株式会社ニコン ステージ装置及び走査型露光装置
US5850280A (en) * 1994-06-16 1998-12-15 Nikon Corporation Stage unit, drive table, and scanning exposure and apparatus using same
US5623853A (en) * 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH09232213A (ja) 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
JP3661291B2 (ja) * 1996-08-01 2005-06-15 株式会社ニコン 露光装置
EP0823662A2 (de) 1996-08-07 1998-02-11 Nikon Corporation Projektionsbelichtungsapparat
JP3695000B2 (ja) * 1996-08-08 2005-09-14 株式会社ニコン 露光方法及び露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
AU5067898A (en) * 1996-11-28 1998-06-22 Nikon Corporation Aligner and method for exposure
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
EP0890136B9 (de) 1996-12-24 2003-12-10 ASML Netherlands B.V. In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
US6020964A (en) 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
JP4264676B2 (ja) 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
AU1682899A (en) 1997-12-18 1999-07-05 Nikon Corporation Stage device and exposure apparatus
AU3108199A (en) 1998-03-24 1999-10-18 Telcordia Technologies, Inc. A method for using a telephone calling card for business transactions
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US5997963A (en) * 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
DE19820158A1 (de) 1998-05-06 1999-11-11 Convergenza Ag Vaduz Verfahren und Vorrichtung zur Blutoxygenierung
US6819414B1 (en) 1998-05-19 2004-11-16 Nikon Corporation Aberration measuring apparatus, aberration measuring method, projection exposure apparatus having the same measuring apparatus, device manufacturing method using the same measuring method, and exposure method
WO1999060361A1 (fr) 1998-05-19 1999-11-25 Nikon Corporation Instrument et procede de mesure d'aberrations, appareil et procede de sensibilisation par projection incorporant cet instrument, et procede de fabrication de dispositifs associe
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US7187503B2 (en) * 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2001267239A (ja) 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
TW550377B (en) * 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
JP2002198303A (ja) 2000-12-27 2002-07-12 Nikon Corp 露光装置、光学特性計測方法、及びデバイス製造方法
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
TWI226972B (en) * 2000-06-01 2005-01-21 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2002005586A (ja) 2000-06-23 2002-01-09 Canon Inc 物体温度調節用熱交換装置、該熱交換装置を使用して製造した投影レンズ及び該熱交換装置を使用した光学系を具備する装置
JP4692862B2 (ja) 2000-08-28 2011-06-01 株式会社ニコン 検査装置、該検査装置を備えた露光装置、およびマイクロデバイスの製造方法
JP2002231622A (ja) * 2000-11-29 2002-08-16 Nikon Corp ステージ装置及び露光装置
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
EP1231514A1 (de) 2001-02-13 2002-08-14 Asm Lithography B.V. Messung der Wellenfrontaberrationen in einem lithographischen Projektionsapparat
WO2002069049A2 (en) * 2001-02-27 2002-09-06 Asml Us, Inc. Simultaneous imaging of two reticles
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
DE10210899A1 (de) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
US20050088634A1 (en) * 2002-03-15 2005-04-28 Nikon Corporation Exposure system and device production process
TWI300953B (en) 2002-03-15 2008-09-11 Nikon Corp Exposure system and device manufacturing process
US6828542B2 (en) * 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
WO2004019128A2 (en) 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
JP3953460B2 (ja) * 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ投影装置
KR100585476B1 (ko) * 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
CN101424881B (zh) * 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2495613B1 (de) 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithografische Vorrichtung
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
US7948604B2 (en) * 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US6992750B2 (en) * 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
SG2011031200A (en) * 2002-12-10 2014-09-26 Nippon Kogaku Kk Exposure apparatus and device manufacturing method
DE10257766A1 (de) * 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
ATE335272T1 (de) 2002-12-19 2006-08-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
KR100971440B1 (ko) 2002-12-19 2010-07-21 코닌클리케 필립스 일렉트로닉스 엔.브이. 레이어 상의 스폿을 조사하기 위한 방법 및 장치
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
DE10261775A1 (de) * 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
DE10301799B4 (de) 2003-01-20 2005-08-11 Carl Zeiss Smt Ag Projektionsbelichtungsanlage und Verfahren zur Homogenisierung optischer Eigenschaften einer optischen Komponente
TWI247339B (en) * 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
JP4604452B2 (ja) * 2003-02-26 2011-01-05 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) * 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR20050110033A (ko) * 2003-03-25 2005-11-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
EP2717098B1 (de) * 2003-04-10 2015-05-13 Nikon Corporation System zur Umgebungskontrolle mittels Vakuum-Rückförderung für eine Immersionslithografievorrichtung
EP1611482B1 (de) 2003-04-10 2015-06-03 Nikon Corporation Flüssigkeitsabfluss für verwendung in einer immersionslithographievorrichtung
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
KR20140139139A (ko) * 2003-04-10 2014-12-04 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
KR101612681B1 (ko) 2003-04-11 2016-04-15 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
JP4837556B2 (ja) 2003-04-11 2011-12-14 株式会社ニコン 液浸リソグラフィにおける光学素子の洗浄方法
JP2004320016A (ja) * 2003-04-11 2004-11-11 Nikon Corp 液浸リソグラフィシステム
EP1614000B1 (de) 2003-04-17 2012-01-18 Nikon Corporation Lithographisches Immersionsgerät
JP4146755B2 (ja) * 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) * 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP2004363559A (ja) 2003-05-14 2004-12-24 Canon Inc 光学部材保持装置
JP4552853B2 (ja) 2003-05-15 2010-09-29 株式会社ニコン 露光装置及びデバイス製造方法
JP5143331B2 (ja) * 2003-05-28 2013-02-13 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
EP2453465A3 (de) 2003-05-28 2018-01-03 Nikon Corporation Belichtungsverfahren, Belichtungsvorrichtung und Verfahren zur Herstellung einer Vorrichtung
DE10324477A1 (de) * 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
EP2261741A3 (de) * 2003-06-11 2011-05-25 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
JP4054285B2 (ja) * 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) * 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) * 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
US7738074B2 (en) * 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1498781B1 (de) 2003-07-16 2019-04-17 ASML Netherlands B.V. Lithografisches Immersionsgerät und Verfahren zur Herstellung einer Vorrichtung
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7061578B2 (en) * 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
SG133590A1 (en) 2003-08-26 2007-07-30 Nikon Corp Optical element and exposure device
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101288140B1 (ko) 2003-09-03 2013-07-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
JP4405515B2 (ja) * 2003-09-25 2010-01-27 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 液浸リソグラフィー方法および基板露光装置
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
TWI553701B (zh) 2003-10-09 2016-10-11 尼康股份有限公司 Exposure apparatus and exposure method, component manufacturing method
EP1524557A1 (de) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
JP2005123305A (ja) * 2003-10-15 2005-05-12 Canon Inc 液浸型露光装置
EP1524558A1 (de) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
KR101712297B1 (ko) 2003-10-22 2017-03-13 가부시키가이샤 니콘 노광 장치, 노광 방법, 디바이스의 제조 방법
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
EP1685446A2 (de) 2003-11-05 2006-08-02 DSM IP Assets B.V. Verfahren und vorrichtung zum herstellen von mikrochips
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
US7061579B2 (en) 2003-11-13 2006-06-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7545481B2 (en) * 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1695148B1 (de) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersionsobjektiv
JP2005166776A (ja) * 2003-12-01 2005-06-23 Canon Inc 液浸露光装置
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005166997A (ja) * 2003-12-03 2005-06-23 Nikon Corp 露光装置及び露光方法、デバイス製造方法
US6977713B2 (en) 2003-12-08 2005-12-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1697798A2 (de) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projektionsobjektiv mit einer hohen apertur und einer planarendoberfläche
JP2005189850A (ja) * 2003-12-15 2005-07-14 Carl Zeiss Smt Ag 液浸リソグラフィー用屈折性投影対物レンズ
JP2007516613A (ja) 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー 少なくとも１つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
JP2005183744A (ja) * 2003-12-22 2005-07-07 Nikon Corp 露光装置及びデバイス製造方法
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102207608B (zh) 2004-01-14 2013-01-02 卡尔蔡司Smt有限责任公司 反射折射投影物镜
CN101799587B (zh) 2004-01-16 2012-05-30 卡尔蔡司Smt有限责任公司 光学系统、投影系统及微结构半导体部件的制造方法
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
DE602005019689D1 (de) * 2004-01-20 2010-04-15 Zeiss Carl Smt Ag Belichtungsvorrichtung und messeinrichtung für eine projektionslinse
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
JP2007520893A (ja) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
KR20190011830A (ko) * 2004-02-04 2019-02-07 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1716454A1 (de) 2004-02-09 2006-11-02 Carl Zeiss SMT AG Projektionsobjektiv für eine mikrolithographische projektionsbelichtungsvorrichtung
KR101115111B1 (ko) 2004-02-13 2012-04-16 칼 짜이스 에스엠티 게엠베하 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈
EP1721201A1 (de) 2004-02-18 2006-11-15 Corning Incorporated Katadioptrisches abbildungssystem zur abbildung mit hoher numerischer apertur mit tief-ultraviolett-licht
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
ITTO20040232A1 (it) 2004-04-14 2004-07-14 Eltek Spa Dispositivo per prevenire il deterioramento di sostanze in esso contenute e il comportamento anomalo di sue parti interne
US20060244938A1 (en) 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
JP5130609B2 (ja) 2004-06-10 2013-01-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP4515335B2 (ja) 2004-06-10 2010-07-28 株式会社ニコン 露光装置、ノズル部材、及びデバイス製造方法
JP4305915B2 (ja) 2004-06-17 2009-07-29 シャープ株式会社 基地局選択に用いる基準を求める方法
US7180572B2 (en) 2004-06-23 2007-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion optical projection system
US20060001851A1 (en) * 2004-07-01 2006-01-05 Grant Robert B Immersion photolithography system
JP4305917B2 (ja) 2004-07-14 2009-07-29 シャープ株式会社 映像信号処理装置及びテレビジョン装置
JP2006038512A (ja) * 2004-07-23 2006-02-09 Fuji Photo Film Co Ltd 血液濾過用ガラス繊維フィルター、血液濾過器具および血液分析素子
US7304715B2 (en) * 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100648310B1 (ko) 2004-09-24 2006-11-23 삼성전자주식회사 영상의 휘도 정보를 이용한 색변환장치 및 이를 구비하는디스플레이 장치
TW200616043A (en) 2004-11-10 2006-05-16 Nikon Corp Optical projection system, exposure apparatus, exposure method and method of fabricating devices
KR101171808B1 (ko) 2004-12-02 2012-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101236023B1 (ko) 2005-01-28 2013-02-21 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
EP1701179A1 (de) 2005-03-08 2006-09-13 Schott AG Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung
US8089608B2 (en) * 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
CN100539020C (zh) 2005-05-12 2009-09-09 株式会社尼康 投影光学系统、曝光装置及曝光方法
KR20080007383A (ko) 2005-05-24 2008-01-18 가부시키가이샤 니콘 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung

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