JP6433264B2 - 透過レーザービームの検出方法 - Google Patents
透過レーザービームの検出方法 Download PDFInfo
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- JP6433264B2 JP6433264B2 JP2014239681A JP2014239681A JP6433264B2 JP 6433264 B2 JP6433264 B2 JP 6433264B2 JP 2014239681 A JP2014239681 A JP 2014239681A JP 2014239681 A JP2014239681 A JP 2014239681A JP 6433264 B2 JP6433264 B2 JP 6433264B2
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- Prior art keywords
- laser beam
- workpiece
- photosensitive
- photosensitive sheet
- transmitted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001514 detection method Methods 0.000 title claims description 13
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000012790 confirmation Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/48—Photometry, e.g. photographic exposure meter using chemical effects
- G01J1/50—Photometry, e.g. photographic exposure meter using chemical effects using change in colour of an indicator, e.g. actinometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Laser Beam Processing (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Dicing (AREA)
- Plasma & Fusion (AREA)
Description
11 半導体ウェーハ
23 感光シート
27 感光層
27a 感光反応領域
28 チャックテーブル
29 改質層
31 抜け光(透過レーザービーム)
68 光学系
72 マスク
73 ピンホール
74 集光レンズ
Claims (2)
- 第1の面と該第1の面と反対側の第2の面を有する板状の被加工物に対して透過性を有する波長のレーザービームの集光点を被加工物の内部に位置づけて、該レーザービームを第1の面側から照射し、該第2の面側へ透過したレーザービームを検出する透過レーザービームの検出方法であって、
感光層を有する感光シートの該感光層を被加工物の該第2の面に対面させて、該感光シートを介して被加工物をチャックテーブルの保持面で保持する感光シート位置づけステップと、
該感光シート位置づけステップを実施した後、被加工物の該第1の面側から該レーザービームを照射するレーザービーム照射ステップと、
該レーザービーム照射ステップを実施した後、該感光シートの該感光層に形成された感光反応領域を観察することにより透過レーザービームの状態を確認する確認ステップと、
を備えたことを特徴とする透過レーザービームの検出方法。 - 該感光シート位置づけステップでは、該感光シートは透光性を有する液体の層を介して被加工物の該第2の面に接着されていることを特徴とする請求項1記載の透過レーザービームの検出方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014239681A JP6433264B2 (ja) | 2014-11-27 | 2014-11-27 | 透過レーザービームの検出方法 |
TW104133715A TWI655048B (zh) | 2014-11-27 | 2015-10-14 | 穿透雷射光束的檢測方法 |
KR1020150154403A KR102331288B1 (ko) | 2014-11-27 | 2015-11-04 | 투과 레이저 빔의 검출 방법 |
US14/938,318 US9494513B2 (en) | 2014-11-27 | 2015-11-11 | Detection method of transmission laser beam |
CN201510822647.7A CN105643118B (zh) | 2014-11-27 | 2015-11-24 | 透射激光束的检测方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014239681A JP6433264B2 (ja) | 2014-11-27 | 2014-11-27 | 透過レーザービームの検出方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016103506A JP2016103506A (ja) | 2016-06-02 |
JP6433264B2 true JP6433264B2 (ja) | 2018-12-05 |
Family
ID=56079024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014239681A Active JP6433264B2 (ja) | 2014-11-27 | 2014-11-27 | 透過レーザービームの検出方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9494513B2 (ja) |
JP (1) | JP6433264B2 (ja) |
KR (1) | KR102331288B1 (ja) |
CN (1) | CN105643118B (ja) |
TW (1) | TWI655048B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6757185B2 (ja) * | 2016-06-08 | 2020-09-16 | 株式会社ディスコ | レーザー光線の検査方法 |
JP6749727B2 (ja) * | 2016-10-14 | 2020-09-02 | 株式会社ディスコ | 検査用ウエーハ及び検査用ウエーハの使用方法 |
US11084129B2 (en) * | 2016-12-05 | 2021-08-10 | Samsung Display Co., Ltd. | Device and method of cutting polarizing plate |
KR102104859B1 (ko) | 2019-05-14 | 2020-04-27 | (주)와이에스티 | 연성회로기판의 마이크 홀 레이저 가공방법 |
JP7465425B2 (ja) | 2020-07-14 | 2024-04-11 | 株式会社東京精密 | 検査用ウェーハの検査方法及び検査装置並びに検査用ウェーハ |
Family Cites Families (22)
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AU500199B2 (en) * | 1975-01-13 | 1979-05-10 | Associated Press, The | Facsimile reproduction system |
DD200295A1 (de) * | 1981-08-12 | 1983-04-06 | Guenter Claus | Led-anzeige mit hohem informationsgehalt |
US5331371A (en) * | 1990-09-26 | 1994-07-19 | Canon Kabushiki Kaisha | Alignment and exposure method |
US5374291A (en) * | 1991-12-10 | 1994-12-20 | Director-General Of Agency Of Industrial Science And Technology | Method of processing photosensitive glass |
JPH06270464A (ja) * | 1993-03-19 | 1994-09-27 | Fuji Xerox Co Ltd | 集光位置検出装置 |
JP2003048086A (ja) * | 2001-07-31 | 2003-02-18 | Canon Inc | エネルギービーム加工装置及び加工方法 |
AU2002365522A1 (en) * | 2001-11-26 | 2003-06-10 | Nikon Corporation | Evaluating method and method for manufacturing exposure apparatus |
KR101682884B1 (ko) * | 2003-12-03 | 2016-12-06 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품 |
KR101204157B1 (ko) * | 2004-01-20 | 2012-11-22 | 칼 짜이스 에스엠테 게엠베하 | 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치 |
JP2006091341A (ja) * | 2004-09-22 | 2006-04-06 | Fuji Photo Film Co Ltd | 走査露光用光源装置並びに走査露光方法及び走査露光装置 |
JP4776911B2 (ja) * | 2004-11-19 | 2011-09-21 | キヤノン株式会社 | レーザ加工装置およびレーザ加工方法 |
TW200633852A (en) * | 2005-03-23 | 2006-10-01 | Fuji Photo Film Co Ltd | Apparatus for and method of manufacturing photosensitive laminated body |
JP2006319198A (ja) * | 2005-05-13 | 2006-11-24 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法およびレーザー加工装置 |
JP2008053500A (ja) * | 2006-08-25 | 2008-03-06 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2008050219A (ja) * | 2006-08-25 | 2008-03-06 | Shibaura Mechatronics Corp | スクライブ溝形成装置、割断装置およびスクライブ溝形成方法 |
JP2010087433A (ja) * | 2008-10-02 | 2010-04-15 | Disco Abrasive Syst Ltd | レーザ加工方法、レーザ加工装置およびチップの製造方法 |
JP2011134955A (ja) * | 2009-12-25 | 2011-07-07 | Disco Abrasive Syst Ltd | 板状材料からのチップ状部品の生産方法 |
JP5615107B2 (ja) | 2010-09-10 | 2014-10-29 | 株式会社ディスコ | 分割方法 |
JP5846764B2 (ja) * | 2011-06-01 | 2016-01-20 | 株式会社ディスコ | ウエーハの加工方法 |
JP5797963B2 (ja) * | 2011-07-25 | 2015-10-21 | 株式会社ディスコ | レーザー光線のスポット形状検出方法 |
JP6062315B2 (ja) * | 2013-04-24 | 2017-01-18 | 株式会社ディスコ | ウエーハの加工方法 |
JP6208521B2 (ja) * | 2013-10-07 | 2017-10-04 | 株式会社ディスコ | ウエーハの加工方法 |
-
2014
- 2014-11-27 JP JP2014239681A patent/JP6433264B2/ja active Active
-
2015
- 2015-10-14 TW TW104133715A patent/TWI655048B/zh active
- 2015-11-04 KR KR1020150154403A patent/KR102331288B1/ko active IP Right Grant
- 2015-11-11 US US14/938,318 patent/US9494513B2/en active Active
- 2015-11-24 CN CN201510822647.7A patent/CN105643118B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN105643118A (zh) | 2016-06-08 |
TW201618876A (zh) | 2016-06-01 |
TWI655048B (zh) | 2019-04-01 |
US20160153908A1 (en) | 2016-06-02 |
KR102331288B1 (ko) | 2021-11-24 |
CN105643118B (zh) | 2019-04-26 |
JP2016103506A (ja) | 2016-06-02 |
KR20160063978A (ko) | 2016-06-07 |
US9494513B2 (en) | 2016-11-15 |
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