DE3483647D1 - Verfahren und vorrichtung zur zerstaeubung. - Google Patents
Verfahren und vorrichtung zur zerstaeubung.Info
- Publication number
- DE3483647D1 DE3483647D1 DE8484116391T DE3483647T DE3483647D1 DE 3483647 D1 DE3483647 D1 DE 3483647D1 DE 8484116391 T DE8484116391 T DE 8484116391T DE 3483647 T DE3483647 T DE 3483647T DE 3483647 D1 DE3483647 D1 DE 3483647D1
- Authority
- DE
- Germany
- Prior art keywords
- spraying method
- spraying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58243870A JPH0627323B2 (ja) | 1983-12-26 | 1983-12-26 | スパツタリング方法及びその装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3483647D1 true DE3483647D1 (de) | 1991-01-03 |
Family
ID=17110200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484116391T Expired - Lifetime DE3483647D1 (de) | 1983-12-26 | 1984-12-27 | Verfahren und vorrichtung zur zerstaeubung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4610770A (de) |
EP (1) | EP0148504B2 (de) |
JP (1) | JPH0627323B2 (de) |
KR (1) | KR890004880B1 (de) |
DE (1) | DE3483647D1 (de) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0627323B2 (ja) | 1983-12-26 | 1994-04-13 | 株式会社日立製作所 | スパツタリング方法及びその装置 |
JPS6113626A (ja) * | 1984-06-29 | 1986-01-21 | Hitachi Ltd | プラズマ処理装置 |
DE3566194D1 (en) * | 1984-08-31 | 1988-12-15 | Hitachi Ltd | Microwave assisting sputtering |
US4842707A (en) * | 1986-06-23 | 1989-06-27 | Oki Electric Industry Co., Ltd. | Dry process apparatus |
JPS6324030A (ja) * | 1986-06-26 | 1988-02-01 | Res Dev Corp Of Japan | 異方性希土類磁石材料およびその製造方法 |
JPS6376867A (ja) * | 1986-09-19 | 1988-04-07 | Mitsubishi Kasei Corp | 反応性スパツタリング装置 |
JP2587924B2 (ja) * | 1986-10-11 | 1997-03-05 | 日本電信電話株式会社 | 薄膜形成装置 |
JP2631650B2 (ja) * | 1986-12-05 | 1997-07-16 | アネルバ株式会社 | 真空装置 |
JPH066786B2 (ja) * | 1987-03-17 | 1994-01-26 | 日本電信電話株式会社 | 薄膜形成装置 |
US4834860A (en) * | 1987-07-01 | 1989-05-30 | The Boc Group, Inc. | Magnetron sputtering targets |
DE3803355A1 (de) * | 1988-02-05 | 1989-08-17 | Leybold Ag | Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage |
US5125358A (en) * | 1988-07-26 | 1992-06-30 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma film deposition system |
US5180436A (en) * | 1988-07-26 | 1993-01-19 | Matsushita Electric Industrial Co., Ltd. | Microwave plasma film deposition system |
US4952273A (en) * | 1988-09-21 | 1990-08-28 | Microscience, Inc. | Plasma generation in electron cyclotron resonance |
JPH0689446B2 (ja) * | 1988-12-19 | 1994-11-09 | 株式会社日立製作所 | 薄膜形成装置 |
JP2934711B2 (ja) * | 1989-12-07 | 1999-08-16 | カシオ計算機株式会社 | スパッタ装置 |
US5045166A (en) * | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
US5707692A (en) * | 1990-10-23 | 1998-01-13 | Canon Kabushiki Kaisha | Apparatus and method for processing a base substance using plasma and a magnetic field |
DE69216685T2 (de) * | 1991-05-31 | 1997-05-28 | Deposition Sciences Inc | Sputteranlage |
DE4119362A1 (de) * | 1991-06-12 | 1992-12-17 | Leybold Ag | Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren |
US5490910A (en) * | 1992-03-09 | 1996-02-13 | Tulip Memory Systems, Inc. | Circularly symmetric sputtering apparatus with hollow-cathode plasma devices |
JPH06192830A (ja) * | 1992-07-31 | 1994-07-12 | Texas Instr Inc <Ti> | 材料層の物理的蒸気沈着のための方法と装置 |
DE4230290A1 (de) * | 1992-09-10 | 1994-03-17 | Leybold Ag | Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung und Mikrowelleneinstrahlung |
DE4230291C2 (de) * | 1992-09-10 | 1999-11-04 | Leybold Ag | Mikrowellenunterstützte Zerstäubungsanordnung |
DE4336830A1 (de) * | 1993-10-28 | 1995-05-04 | Leybold Ag | Plasma-Zerstäubungsanlage mit Mikrowellenunterstützung |
KR100226366B1 (ko) * | 1995-08-23 | 1999-10-15 | 아끼구사 나오유끼 | 플라즈마장치 및 플라즈마 처리방법 |
US5855745A (en) * | 1997-04-23 | 1999-01-05 | Sierra Applied Sciences, Inc. | Plasma processing system utilizing combined anode/ ion source |
JP3944946B2 (ja) * | 1997-04-25 | 2007-07-18 | 株式会社島津製作所 | 薄膜形成装置 |
FR2774251B1 (fr) * | 1998-01-26 | 2000-02-25 | Commissariat Energie Atomique | Source a plasma micro-onde lineaire en aimants permanents |
KR100422184B1 (ko) * | 2001-11-10 | 2004-03-11 | 아이티엠 주식회사 | 진공 아크를 이용한 고품위 박막 형성 방법 |
US7879209B2 (en) * | 2004-08-20 | 2011-02-01 | Jds Uniphase Corporation | Cathode for sputter coating |
US8500973B2 (en) * | 2004-08-20 | 2013-08-06 | Jds Uniphase Corporation | Anode for sputter coating |
US7658802B2 (en) * | 2005-11-22 | 2010-02-09 | Applied Materials, Inc. | Apparatus and a method for cleaning a dielectric film |
US8268116B2 (en) * | 2007-06-14 | 2012-09-18 | Lam Research Corporation | Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber |
EP2251454B1 (de) | 2009-05-13 | 2014-07-23 | SiO2 Medical Products, Inc. | Entgasungsverfahren zur Prüfung einer beschichteten Oberfläche |
US9458536B2 (en) | 2009-07-02 | 2016-10-04 | Sio2 Medical Products, Inc. | PECVD coating methods for capped syringes, cartridges and other articles |
US11624115B2 (en) | 2010-05-12 | 2023-04-11 | Sio2 Medical Products, Inc. | Syringe with PECVD lubrication |
US9878101B2 (en) | 2010-11-12 | 2018-01-30 | Sio2 Medical Products, Inc. | Cyclic olefin polymer vessels and vessel coating methods |
US9272095B2 (en) | 2011-04-01 | 2016-03-01 | Sio2 Medical Products, Inc. | Vessels, contact surfaces, and coating and inspection apparatus and methods |
WO2012147771A1 (ja) | 2011-04-28 | 2012-11-01 | 東海ゴム工業株式会社 | マイクロ波プラズマ生成装置、およびそれを用いたマグネトロンスパッタ成膜装置 |
US11116695B2 (en) | 2011-11-11 | 2021-09-14 | Sio2 Medical Products, Inc. | Blood sample collection tube |
AU2012318242A1 (en) | 2011-11-11 | 2013-05-30 | Sio2 Medical Products, Inc. | Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus |
JP5907701B2 (ja) * | 2011-11-18 | 2016-04-26 | 住友理工株式会社 | フィルム部材の製造方法 |
EP2846755A1 (de) | 2012-05-09 | 2015-03-18 | SiO2 Medical Products, Inc. | Saccharidschutzschicht für eine arzneimittelverpackung |
US9184030B2 (en) | 2012-07-19 | 2015-11-10 | Lam Research Corporation | Edge exclusion control with adjustable plasma exclusion zone ring |
FR2995493B1 (fr) * | 2012-09-11 | 2014-08-22 | Hydromecanique & Frottement | Dispositif pour generer un plasma presentant une etendue importante le long d'un axe par resonnance cyclotronique electronique rce a partir d'un milieu gazeux |
JP6509734B2 (ja) | 2012-11-01 | 2019-05-08 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | 皮膜検査方法 |
US9903782B2 (en) | 2012-11-16 | 2018-02-27 | Sio2 Medical Products, Inc. | Method and apparatus for detecting rapid barrier coating integrity characteristics |
JP6382830B2 (ja) | 2012-11-30 | 2018-08-29 | エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド | 医療シリンジ、カートリッジ等上でのpecvd堆積の均一性制御 |
US9764093B2 (en) | 2012-11-30 | 2017-09-19 | Sio2 Medical Products, Inc. | Controlling the uniformity of PECVD deposition |
US20160015898A1 (en) | 2013-03-01 | 2016-01-21 | Sio2 Medical Products, Inc. | Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus |
US9937099B2 (en) | 2013-03-11 | 2018-04-10 | Sio2 Medical Products, Inc. | Trilayer coated pharmaceutical packaging with low oxygen transmission rate |
CN105392916B (zh) | 2013-03-11 | 2019-03-08 | Sio2医药产品公司 | 涂布包装材料 |
US20160017490A1 (en) | 2013-03-15 | 2016-01-21 | Sio2 Medical Products, Inc. | Coating method |
EP3693493A1 (de) | 2014-03-28 | 2020-08-12 | SiO2 Medical Products, Inc. | Antistatische beschichtungen für kunststoffbehälter |
CN103966567B (zh) * | 2014-05-05 | 2016-03-16 | 京东方科技集团股份有限公司 | 一种平面靶材的磁场结构及其使用方法 |
US11077233B2 (en) | 2015-08-18 | 2021-08-03 | Sio2 Medical Products, Inc. | Pharmaceutical and other packaging with low oxygen transmission rate |
FR3042797B1 (fr) * | 2015-10-27 | 2021-01-22 | Commissariat Energie Atomique | Dispositif pour la fabrication d'une couche en carbone amorphe par plasma a la resonance cyclotron electronique |
JP7138504B2 (ja) * | 2018-07-31 | 2022-09-16 | キヤノントッキ株式会社 | 成膜装置及び電子デバイスの製造方法 |
CN113774342A (zh) * | 2020-06-09 | 2021-12-10 | 江苏菲沃泰纳米科技股份有限公司 | 溅射镀膜设备及其电极装置和镀膜方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3325394A (en) * | 1963-07-01 | 1967-06-13 | Ibm | Magnetic control of film deposition |
FR2324755A1 (fr) * | 1975-09-19 | 1977-04-15 | Anvar | Dispositif de pulverisation cathodique de grande vitesse de depot |
JPS55131175A (en) * | 1979-03-30 | 1980-10-11 | Toshiba Corp | Surface treatment apparatus with microwave plasma |
JPS5613480A (en) * | 1979-07-13 | 1981-02-09 | Hitachi Ltd | Dry etching apparatus |
JPS5673539A (en) * | 1979-11-22 | 1981-06-18 | Toshiba Corp | Surface treating apparatus of microwave plasma |
JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
JPS5875839A (ja) * | 1981-10-30 | 1983-05-07 | Fujitsu Ltd | スパツタ装置 |
JPS58161774A (ja) * | 1982-03-17 | 1983-09-26 | Fujitsu Ltd | スパツタリング処理方法 |
EP0103461B1 (de) * | 1982-09-10 | 1988-11-17 | Nippon Telegraph And Telephone Corporation | Vorrichtung und Verfahren zum Auftragen mittels Plasma |
JPS6016424A (ja) * | 1983-07-08 | 1985-01-28 | Fujitsu Ltd | マイクロ波プラズマ処理方法及びその装置 |
JPH0627323B2 (ja) | 1983-12-26 | 1994-04-13 | 株式会社日立製作所 | スパツタリング方法及びその装置 |
-
1983
- 1983-12-26 JP JP58243870A patent/JPH0627323B2/ja not_active Expired - Lifetime
-
1984
- 1984-12-20 KR KR1019840008169A patent/KR890004880B1/ko not_active IP Right Cessation
- 1984-12-24 US US06/686,005 patent/US4610770A/en not_active Expired - Lifetime
- 1984-12-27 EP EP84116391A patent/EP0148504B2/de not_active Expired - Lifetime
- 1984-12-27 DE DE8484116391T patent/DE3483647D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0148504B2 (de) | 1995-07-12 |
US4610770A (en) | 1986-09-09 |
EP0148504A2 (de) | 1985-07-17 |
EP0148504B1 (de) | 1990-11-22 |
JPH0627323B2 (ja) | 1994-04-13 |
EP0148504A3 (en) | 1987-10-07 |
KR890004880B1 (ko) | 1989-11-30 |
JPS60135573A (ja) | 1985-07-18 |
KR850005147A (ko) | 1985-08-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings |