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DE3483647D1 - Verfahren und vorrichtung zur zerstaeubung. - Google Patents

Verfahren und vorrichtung zur zerstaeubung.

Info

Publication number
DE3483647D1
DE3483647D1 DE8484116391T DE3483647T DE3483647D1 DE 3483647 D1 DE3483647 D1 DE 3483647D1 DE 8484116391 T DE8484116391 T DE 8484116391T DE 3483647 T DE3483647 T DE 3483647T DE 3483647 D1 DE3483647 D1 DE 3483647D1
Authority
DE
Germany
Prior art keywords
spraying method
spraying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484116391T
Other languages
English (en)
Inventor
Hiroshi Saito
Hideki Tateishi
Shigeru Kobayashi
Susumu Aiuchi
Yasumichi Suzuki
Masao Sakata
Hideaki Shimamura
Tsuneaki Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17110200&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3483647(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3483647D1 publication Critical patent/DE3483647D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/46Sputtering by ion beam produced by an external ion source
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
DE8484116391T 1983-12-26 1984-12-27 Verfahren und vorrichtung zur zerstaeubung. Expired - Lifetime DE3483647D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243870A JPH0627323B2 (ja) 1983-12-26 1983-12-26 スパツタリング方法及びその装置

Publications (1)

Publication Number Publication Date
DE3483647D1 true DE3483647D1 (de) 1991-01-03

Family

ID=17110200

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484116391T Expired - Lifetime DE3483647D1 (de) 1983-12-26 1984-12-27 Verfahren und vorrichtung zur zerstaeubung.

Country Status (5)

Country Link
US (1) US4610770A (de)
EP (1) EP0148504B2 (de)
JP (1) JPH0627323B2 (de)
KR (1) KR890004880B1 (de)
DE (1) DE3483647D1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
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JPH0627323B2 (ja) 1983-12-26 1994-04-13 株式会社日立製作所 スパツタリング方法及びその装置
JPS6113626A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd プラズマ処理装置
DE3566194D1 (en) * 1984-08-31 1988-12-15 Hitachi Ltd Microwave assisting sputtering
US4842707A (en) * 1986-06-23 1989-06-27 Oki Electric Industry Co., Ltd. Dry process apparatus
JPS6324030A (ja) * 1986-06-26 1988-02-01 Res Dev Corp Of Japan 異方性希土類磁石材料およびその製造方法
JPS6376867A (ja) * 1986-09-19 1988-04-07 Mitsubishi Kasei Corp 反応性スパツタリング装置
JP2587924B2 (ja) * 1986-10-11 1997-03-05 日本電信電話株式会社 薄膜形成装置
JP2631650B2 (ja) * 1986-12-05 1997-07-16 アネルバ株式会社 真空装置
JPH066786B2 (ja) * 1987-03-17 1994-01-26 日本電信電話株式会社 薄膜形成装置
US4834860A (en) * 1987-07-01 1989-05-30 The Boc Group, Inc. Magnetron sputtering targets
DE3803355A1 (de) * 1988-02-05 1989-08-17 Leybold Ag Teilchenquelle fuer eine reaktive ionenstrahlaetz- oder plasmadepositionsanlage
US5125358A (en) * 1988-07-26 1992-06-30 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
US5180436A (en) * 1988-07-26 1993-01-19 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
US4952273A (en) * 1988-09-21 1990-08-28 Microscience, Inc. Plasma generation in electron cyclotron resonance
JPH0689446B2 (ja) * 1988-12-19 1994-11-09 株式会社日立製作所 薄膜形成装置
JP2934711B2 (ja) * 1989-12-07 1999-08-16 カシオ計算機株式会社 スパッタ装置
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
US5707692A (en) * 1990-10-23 1998-01-13 Canon Kabushiki Kaisha Apparatus and method for processing a base substance using plasma and a magnetic field
DE69216685T2 (de) * 1991-05-31 1997-05-28 Deposition Sciences Inc Sputteranlage
DE4119362A1 (de) * 1991-06-12 1992-12-17 Leybold Ag Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren
US5490910A (en) * 1992-03-09 1996-02-13 Tulip Memory Systems, Inc. Circularly symmetric sputtering apparatus with hollow-cathode plasma devices
JPH06192830A (ja) * 1992-07-31 1994-07-12 Texas Instr Inc <Ti> 材料層の物理的蒸気沈着のための方法と装置
DE4230290A1 (de) * 1992-09-10 1994-03-17 Leybold Ag Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung und Mikrowelleneinstrahlung
DE4230291C2 (de) * 1992-09-10 1999-11-04 Leybold Ag Mikrowellenunterstützte Zerstäubungsanordnung
DE4336830A1 (de) * 1993-10-28 1995-05-04 Leybold Ag Plasma-Zerstäubungsanlage mit Mikrowellenunterstützung
KR100226366B1 (ko) * 1995-08-23 1999-10-15 아끼구사 나오유끼 플라즈마장치 및 플라즈마 처리방법
US5855745A (en) * 1997-04-23 1999-01-05 Sierra Applied Sciences, Inc. Plasma processing system utilizing combined anode/ ion source
JP3944946B2 (ja) * 1997-04-25 2007-07-18 株式会社島津製作所 薄膜形成装置
FR2774251B1 (fr) * 1998-01-26 2000-02-25 Commissariat Energie Atomique Source a plasma micro-onde lineaire en aimants permanents
KR100422184B1 (ko) * 2001-11-10 2004-03-11 아이티엠 주식회사 진공 아크를 이용한 고품위 박막 형성 방법
US7879209B2 (en) * 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US8500973B2 (en) * 2004-08-20 2013-08-06 Jds Uniphase Corporation Anode for sputter coating
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
US8268116B2 (en) * 2007-06-14 2012-09-18 Lam Research Corporation Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber
EP2251454B1 (de) 2009-05-13 2014-07-23 SiO2 Medical Products, Inc. Entgasungsverfahren zur Prüfung einer beschichteten Oberfläche
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
WO2012147771A1 (ja) 2011-04-28 2012-11-01 東海ゴム工業株式会社 マイクロ波プラズマ生成装置、およびそれを用いたマグネトロンスパッタ成膜装置
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
AU2012318242A1 (en) 2011-11-11 2013-05-30 Sio2 Medical Products, Inc. Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus
JP5907701B2 (ja) * 2011-11-18 2016-04-26 住友理工株式会社 フィルム部材の製造方法
EP2846755A1 (de) 2012-05-09 2015-03-18 SiO2 Medical Products, Inc. Saccharidschutzschicht für eine arzneimittelverpackung
US9184030B2 (en) 2012-07-19 2015-11-10 Lam Research Corporation Edge exclusion control with adjustable plasma exclusion zone ring
FR2995493B1 (fr) * 2012-09-11 2014-08-22 Hydromecanique & Frottement Dispositif pour generer un plasma presentant une etendue importante le long d'un axe par resonnance cyclotronique electronique rce a partir d'un milieu gazeux
JP6509734B2 (ja) 2012-11-01 2019-05-08 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 皮膜検査方法
US9903782B2 (en) 2012-11-16 2018-02-27 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
JP6382830B2 (ja) 2012-11-30 2018-08-29 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 医療シリンジ、カートリッジ等上でのpecvd堆積の均一性制御
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US20160015898A1 (en) 2013-03-01 2016-01-21 Sio2 Medical Products, Inc. Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
CN105392916B (zh) 2013-03-11 2019-03-08 Sio2医药产品公司 涂布包装材料
US20160017490A1 (en) 2013-03-15 2016-01-21 Sio2 Medical Products, Inc. Coating method
EP3693493A1 (de) 2014-03-28 2020-08-12 SiO2 Medical Products, Inc. Antistatische beschichtungen für kunststoffbehälter
CN103966567B (zh) * 2014-05-05 2016-03-16 京东方科技集团股份有限公司 一种平面靶材的磁场结构及其使用方法
US11077233B2 (en) 2015-08-18 2021-08-03 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate
FR3042797B1 (fr) * 2015-10-27 2021-01-22 Commissariat Energie Atomique Dispositif pour la fabrication d'une couche en carbone amorphe par plasma a la resonance cyclotron electronique
JP7138504B2 (ja) * 2018-07-31 2022-09-16 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
CN113774342A (zh) * 2020-06-09 2021-12-10 江苏菲沃泰纳米科技股份有限公司 溅射镀膜设备及其电极装置和镀膜方法

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US3325394A (en) * 1963-07-01 1967-06-13 Ibm Magnetic control of film deposition
FR2324755A1 (fr) * 1975-09-19 1977-04-15 Anvar Dispositif de pulverisation cathodique de grande vitesse de depot
JPS55131175A (en) * 1979-03-30 1980-10-11 Toshiba Corp Surface treatment apparatus with microwave plasma
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
JPS5673539A (en) * 1979-11-22 1981-06-18 Toshiba Corp Surface treating apparatus of microwave plasma
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device
JPS5875839A (ja) * 1981-10-30 1983-05-07 Fujitsu Ltd スパツタ装置
JPS58161774A (ja) * 1982-03-17 1983-09-26 Fujitsu Ltd スパツタリング処理方法
EP0103461B1 (de) * 1982-09-10 1988-11-17 Nippon Telegraph And Telephone Corporation Vorrichtung und Verfahren zum Auftragen mittels Plasma
JPS6016424A (ja) * 1983-07-08 1985-01-28 Fujitsu Ltd マイクロ波プラズマ処理方法及びその装置
JPH0627323B2 (ja) 1983-12-26 1994-04-13 株式会社日立製作所 スパツタリング方法及びその装置

Also Published As

Publication number Publication date
EP0148504B2 (de) 1995-07-12
US4610770A (en) 1986-09-09
EP0148504A2 (de) 1985-07-17
EP0148504B1 (de) 1990-11-22
JPH0627323B2 (ja) 1994-04-13
EP0148504A3 (en) 1987-10-07
KR890004880B1 (ko) 1989-11-30
JPS60135573A (ja) 1985-07-18
KR850005147A (ko) 1985-08-21

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings