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CN1909223A - 具有铁氧体屏蔽结构的半导体封装 - Google Patents

具有铁氧体屏蔽结构的半导体封装 Download PDF

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Publication number
CN1909223A
CN1909223A CNA2006101081321A CN200610108132A CN1909223A CN 1909223 A CN1909223 A CN 1909223A CN A2006101081321 A CNA2006101081321 A CN A2006101081321A CN 200610108132 A CN200610108132 A CN 200610108132A CN 1909223 A CN1909223 A CN 1909223A
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Prior art keywords
ferrite
layer
semiconductor device
welding disk
ferrite structure
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CNA2006101081321A
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CN1909223B (zh
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宋垠锡
姜芸炳
李始勋
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Abstract

本发明涉及一种半导体器件，其在晶片级包括适用于抑制半导体器件内潜在会出现在信号线和端子点上的高频噪声的一个和更多铁氧体结构。本发明还公开了形成所述铁氧体结构的相关方法。

Description

具有铁氧体屏蔽结构的半导体封装
技术领域
本发明总地涉及半导体器件。更特别地，本发明涉及半导体器件和引入铁氧体(ferrite)屏蔽结构的相关封装技术。
背景技术
半导体器件的计算和数据处理电路设置在由小部分硅晶片制成的管芯(die)上。半导体管芯本身非常小且很易碎。在它们最初的“从晶片切割(cut-from the wafer)”的状态下，尽管它们的电路完全起作用，但是半导体管芯不是非常有用，因为它们的易碎性质妨碍了在宿主器件(host device)中的实际集成且它们的小尺寸阻止了到它们的内部电路的实际连接。因此，需要一种有效的半导体封装技术。上下文中术语“封装”或“进行封装”指的是适于提供物理保护和/或到/从半导体管芯的电连接的任何材料、工艺、方法、或技术。
半导体器件，例如微电子器件、存储器件等，通常将其组元半导体管芯装入封装或外壳(housing)中从而向管芯提供保护来免于机械震动和周围环境的潜在腐蚀影响。半导体器件封装有多种形式因素和类型，但是全部功能半导体器件封装适于提供半导体管芯和外部电路之间的电连接。
为了便于与外部电路的连接，半导体器件封装通常提供多个端子点(termination point)。“端子点”是适于将电信号(例如功率、数据、控制、地址等)从基板或者更特别地是形成在基板上的信号线或电路传输到外部点的任何结构。“外部点”是形成在基板外的任何导电结构，或者更特别地，是形成在基板外(例如离开基板)的信号线或电路。本质上适于将来自于形成在基板上的信号线或电路的电信号传输到外部点的任何三维导电结构都可用作端子点。然而，通常的端子点包括：例如针脚(pin)、金属引线、以及所谓的凸块(bump)结构。如本领域公知的，“凸块”可以由焊料(solder)或导电金属/金属合金(例如金)以球或类似突出结构的形状形成。凸块一般形成为导电材料的球，其形成为半导体器件的连接装置。下文中使用时，术语“球结构”不应被理解为局限于仅球形导电结构。而是，术语球结构包括任何合理形状和成分的“凸块”。
在上下文中，术语“信号线”应宽泛地理解为包括适于传输电信号的任何导电结构。利用传统布局和构图技术形成在基板上或与基板相关地形成的金属迹线(metal trace)和微条(micro-strip)线是信号线的例子。这样的元件通常由导电材料诸如铜(Cu)、铝(Al)、金(Au)、或者含有类似导电材料的合金形成。
各种类型的端子点用于各种常规半导体器件封装和制造技术中。所谓的倒装芯片(flip-chip)、凸块键合(bump bonding)、以及多层(或堆叠)封装技术取决于封装内连接半导体管芯的不同端子点结构的范围。
与半导体器件封装相关的设计问题和制造复杂度随着器件密度和信号频率增大在数年里已经增大。高频信号(例如时钟、数据、和/或控制信号等)具有被良好理解的电磁传输属性。随着这些电信号以高达或超过一千兆赫的频率越来越多地传输到半导体器件或从其传出，出现了各种信号传输问题。
例如，与高信号频率相关的越来越窄的数据开关(data switching)时间周期更易受电干扰或噪声的负面影响，且电磁干扰(EMI)的势(potential)随着传到半导体器件或从其传出的信号的频率而增大。在一个特别值得注意的现象中，密集集成的信号线和端子点允许高频信号交叉耦合(cross-couple)到传输功率信号的信号线和/或端子点上。上下文中“功率信号”通常是DC电压信号，例如地(ground)、VDD、VSS、VCC等，意在向半导体器件内的电路供电，但是功率信号可包括任何较低频率信号。一旦耦合到传输功率信号的信号线或端子点上，高频信号将作为噪声传输到整个半导体器件。
已经有数个常规解决方法针对该问题。在一个解决方法中，信号线和端子点布置在半导体器件内，使得高频信号(噪声)耦合的可能性最小化。不幸的是，随着半导体器件密度持续增大，这样的基于布局的解决方法变得越来越难于实施。在目前的半导体器件上已没有足够的可得表面区域来提供传输功率信号的信号线和端子点与传输高频信号的信号线和端子点之间的适当隔离。
在另一解决方法中，差动信号(differential signal)线用于传输功率信号。如本领域公知的，差动信号可以结合使用从而基本抵消传输功率信号的信号线上显现的高频噪声分量。不幸的是，差动信号线的使用加倍了半导体器件中功率信号线和相关的连接针脚的数量。随着针脚数由于许多其它原因而上升，且随着目前半导体器件中可得表面区域越来越宝贵，与差动信号线的使用相关的设计成本越来越昂贵。
在又一解决方法中，提供电磁障碍(obstacle)阻挡或消除信号线或连接点上显现的高频噪声分量。这些基于电磁障碍的解决方法中的许多在包括所涉及的半导体器件的系统集成中在封装级或更高级别(例如板级)实施。例如，许多封装内系统(SIP)和多堆叠封装(MSP)引入一些形式的电磁障碍。分立去耦电容器是一种常见类型的电子障碍，但是这样的元件倾向于在尺寸上非常大，使得它们集成到高密度半导体器件中较困难。
电磁障碍的板级实施的示例可见于例如1988年2月15日提交的日本专利文献JP1989-206688和1989年6月13日提交的日本专利文献JP1991-014284中。在第一篇日本公开中，磁(铁氧体)珠(bead)设置为示于促进半导体封装的(外)引线与印刷电路板(PCB)之间的连接的集成电路间隔物(spacer)的部分。在第二篇日本公开中，铁氧体珠通过通孔(via)布置在PCB周围。
实际上，许多不同的噪声吸收、高损耗磁材料已被用于各种应用中从而从用于传输信号的电路径减小或消除高频噪声分量。电缆工业已经面临将传输线从EMI屏蔽的问题许多年。例如，美国专利No.6534708描述了由M-X-Y磁成分形成的高损耗磁材料，其中M是包括铁(Fe)、钴(Co)、和/或镍(Ni)的金属磁材料，X是除了M和Y之外的一种或更多元素，Y是氟(F)、氮(N)、和/或氧(O)。此材料用来包覆在高频信号附近用于有效传输功率信号的信号传输电缆。
美国专利No.6492588提出了带铁氧体的聚合物和铁氧体珠在起爆电缆(detonation cable)中的使用。该电缆中的铁氧体结构充当电磁障碍且趋于抑制否则会耦合到该电缆的导电部分上的高频噪声。
类似地，在美国专利No.6686543中，气袋系统中的操作电缆通过包含围绕该电缆的信号传导部分的石墨材料而被屏蔽。在此引用这些专利的主题作为参考。
不幸地，与减小EMI的传统电缆解决方法和板级解决方法相关的尺寸和应用技术并未给出对封装级或更低级别的EMI抑制问题的解决方法。需要一种解决方法，与差动信号线的使用不同，其不增大半导体器件中的信号线或针脚数。需要一种解决方法，与分立电磁障碍诸如去耦电容器不同，其不实质上增加半导体器件中对信号线和端子点布局标准已经施加的极大压力。需要一种解决方法，与传统的基于PCB和电缆的解决方法不同，其能够在晶片级或晶片级封装范围实施。
发明内容
本发明的实施例提供一种半导体器件封装，该封装引入了与传输功率信号的信号线或端子点相关的有效电磁障碍(electromagnetic obstacle)。更特别地，本发明的实施例容许在适于制造半导体器件的制造工艺的晶片级实施(例如晶片级封装)。术语“晶片级”一般指的是适于在单独的半导体管芯从晶片切割之前使用的任何工艺或制造技术。即，本发明的实施例与半导体器件本身的设计和晶片级制造是整体的，而不是与器件外补救附加物、封装到封装连接、或者PCB级实施的方案相关。
在一个实施例中，本发明提供一种半导体器件，包括：形成在基板上的导电焊盘(pad)；电连接到该焊盘的端子点；以及形成在该导电焊盘与该端子点之间的铁氧体结构。
在另一实施例中，本发明提供一种半导体器件，包括：形成在基板上的导电焊盘；电连接到该焊盘的端子点；连接该导电焊盘和该端子点的信号线；以及形成在该导电焊盘与该端子点之间的铁氧体结构。
在一些实施例中，球结构可用作端子点的部分。
在又一实施例中，本发明提供一种形成半导体器件的方法，包括：在基板上形成导电焊盘；在该基板上形成端子点；以及在该导电焊盘与该端子点之间形成铁氧体结构。
在又一实施例中，本发明提供一种形成半导体器件的方法，包括：在基板上形成导电焊盘；在该基板上形成第一绝缘层从而暴露该导电焊盘的至少一部分；在该第一绝缘层上形成电连接到该导电焊盘的该暴露部分的信号线；在该信号线上形成第二绝缘层；形成穿过该第二绝缘层的接触井从而暴露该信号线的一部分；在该第二绝缘层上形成且构图铁氧体材料层从而在该接触井附近形成铁氧体结构；以及在该接触井中形成与该信号线的所述暴露部分电接触的端子点，使得该铁氧体结构在该端子点与该信号线的暴露部分之间。
在又一实施例中，本发明提供一种形成半导体器件的方法，包括：在基板上形成绝缘层；在该绝缘层上形成第一铁氧体材料层；形成且构图第一光致抗蚀剂图案从而形成暴露该第一铁氧体材料层的第一部分的第一开口；在该第一铁氧体材料层上该第一开口中形成信号线；构图该第一光之抗蚀剂图案从而形成在该信号线周围比该第一开口大且暴露该第一铁氧体材料层的第二部分的第二开口；在该第二开口中形成第二铁氧体材料层，使得该第一铁氧体层的所述暴露的第二部分和该第二铁氧体层的结合基本围绕该信号线；在该第二铁氧体材料层上形成第二光致抗蚀剂图案；以及利用该第二光致抗蚀剂图案作为掩模形成基本围绕该信号线的包括该第一铁氧体层的所述暴露的第二部分和该第二铁氧体层的结合的铁氧体结构。
附图说明
下面将参照附图描述本发明的示例性实施例，附图中相似的附图标记表示相似的元件。附图中：
图1示出包括球结构的传统端子点；
图2示出本发明的包括铁氧体结构的一个器件实施例；
图3不同地示出用于铁氧体结构的示例性形状；
图4示出本发明的包括铁氧体结构的另一器件实施例；
图5A至5F不同地示出本发明的若干方法实施例；
图6和7共同示出本发明的包括铁氧体结构的另一器件实施例；以及
图8A至8E示出本发明的另一方法实施例。
具体实施方式
这里参照附图描述本发明的与数个实施例相关的选定特征和优点。然而，本发明可以在多种实施例中实施。下面的实施例中元件的性质、构造、以及成分可以随着特定设计和制造技术而宽泛地变化。另外，给出示例性实施例作为教导本发明的制造和使用的例子。本发明的范围不应理解为仅局限于教导示例。而是，所附权利要求定义本发明的范围。
本发明的实施例可以直接涉及越过(或向/从)半导体器件的基板传输功率信号的信号线。本发明的另一些实施例可直接涉及从半导体器件传入/传出功率信号的端子点。下面将以一些附加细节描述这些常见方案类型的例子。
在各种实施例中，本发明利用铁氧体结构来从传输功率信号的信号线或端子点显著减小或消除高频噪声。上下文中的“铁氧体结构”包括氧化铁的任何成分、以及至少一种金属，所述金属包括例如镍(Ni)、锌(Zn)、锰(Mn)、钴(Co)、镁(Mg)、铝(Al)、钡(Ba)、铜(Cu)、铁(Fe)等、和/或含有它们的任何金属合金。无论如何形成，所述铁氧体结构对附近经过的高频电信号将表现出磁响应。
现在将相关于包括凸块结构(例如球结构)的示例性端子点描述一个实施例，该实施例示出将铁氧体结构引入到半导体器件中。如常规技术那样，所述凸块可由焊料或导电金属例如金形成。根据本发明的教导，常规端子点可被类似地修改从而引入铁氧体结构。
然而，在描述本发明的实施例之前，回顾示例性常规端子点的形式和性质是有益的。图1示出利用凸块形成的常规端子点。凸块包括安置于凸块下金属(UBM)层上的焊料或金球结构。UBM层接触例如由铝(Al)形成的导电焊盘。导电焊盘形成在基板表面上在覆盖基板的层间电介质(ILD)层内。基板通常由硅晶片形成，但是其它材料，半导体和非半导体，可被使用。上下文中术语“安置(seat)”宽泛地意味着凸块与下面的导电元件例如UBM层之间的足以提供稳定的电接触的任何固定位置连接。
如本领域技术人员所理解的，UBM层对常规端子点的形成是可选的。即，球结构可直接形成在下面的导电焊盘上(或者替代地在通过ILD层暴露的导电信号线上)。然而，在没有UBM层时这是难以做到的。即，UBM层可选择性地由相关于用于形成球结构的材料提供较好的粘合属性的材料或包括该材料的合金形成，所述材料例如为钛(Ti)、钨(W)、镍(Ni)、钽(Ta)、铬(Cr)、金(Au)等。实际上，UBM层可充当利于适于形成球结构的电镀工艺的各种籽层。
可以使用复杂UBM层而具有良好的效果。例如在一个实施例中，UBM层可包括由Ti、TiN、Cr或相关合金形成的第一层，以及由Cu、Au、Ni、TiN或相关合金形成的第二层。该第一层形成为与导电焊盘或信号线接触，该第二层形成在该第一层上，使得它可以收纳球结构。以此方式，UBM层可充当全异材料成分的元件之间的高效电接触。
因此，已知UBM层提供的多功能性和积极的性能品质，许多端子点将引入某一种类的UBM层。因此UBM层将是提供来改善凸块(例如球结构)与其它结构元件(例如导电焊盘或信号线)之间的形成、粘合性、接触、和/或电连接所考虑的任何基于金属、金属合金、和/或导电材料的结构。
了解了这些背景，本发明的一个实施例示于图2中。图2示出高频噪声耦合到用来传输功率信号的信号线或端子点且之后被其传输的问题的晶片级结构解决方法的一个例子。图2所示的示例性端子点100包括形成在基板110上的导电焊盘114。导电焊盘114可以多样地连接到形成在基板110中的信号线、导电通孔(via)、和/或导电区域(未示出)等。例如由氧化物形成的绝缘层112可在导电焊盘114的形成之后应用到基板110，只要所提供的绝缘层被构图从而暴露导电焊盘114的某些部分。然后第一绝缘(例如电介质)层118可形成且构图在绝缘层112上，使得导电焊盘114的至少一部分用于电连接而被暴露。(整个本说明书中使用的用语“形成且构图”不应理解为必需要求两个或更多不同的制造工艺。而是，本领域技术人员将意识到，许多不同的常规技术和工艺可用来形成这里描述的材料层和将该材料层构图为有用的几何形状)。
在图2所示的例子中，再分布线(redistribution line)120连接到导电焊盘114。替代地，跨过基板水平形成的信号线和/或穿过基板垂直形成的导电通孔可连接到导电焊盘114。然而，再分布线通常用来连接位于基板110上不同位置的导电焊盘和端子点。例如，由于其完全不同的尺寸，相邻的球结构与相邻的导电焊盘相比会需要更多分隔。因此，再分布线120将充当可被包括在本发明的实施例中的许多不同类型信号线的例子。
再分布线120通过上面的第二绝缘层122被暴露且连接到UBM层124。球结构126(例如焊料球)安置在UBM层124上。然而，与前述常规端子点结构不同，所示实施例包括至少部分地在球结构126和导电焊盘114之间形成的铁氧体结构130。术语“在…之间”在此表示铁氧体结构相对于球结构126和导电焊盘114的至少某一物理部署，使得源于导电焊盘114且打算通过球结构126传输到外部电路的信号必需经过(或在附近经过)铁氧体结构130。此关系还对沿相反方向从球结构126传到导电焊盘114的信号成立。
在图2所示的例子中，当安置为与UBM层124接触时，铁氧体结构130形成为围绕球结构126的下部分的项圈(collar)形结构。项圈形铁氧体结构130可形成有任何合理的几个形状。图3多样地示出椭圆项圈形铁氧体结构130a、正方项圈形铁氧体结构130b、八角项圈形铁氧体结构130c、以及半圆项圈形铁氧体结构130d。这些示例性铁掩体结构的每个的中心的椭圆属性基于这样的假定，即球结构126的形状、下面的UBM层124的形状、和/或穿过第二绝缘层122形成从而暴露再分布线120的接触井117(见图5A-5F)的形状要求对应的具有椭圆中心的铁氧体结构。然而，如果前述元件的一个或更多的性质和形状替代地要求铁氧体结构130的矩形形状中心，矩形中心可替代图3所示的示例性铁氧体结构。不管相关端子点元件的几何形状，铁氧体130的形状可设计来允许在用于所关注的功率信号的导电路径周围或附近的密配合(snug fit)。
此设计原理遵循这样的认识，即铁氧体结构130用来抑制通过它(或在其附近)接近地通过的高频信号。即，形成铁氧体结构130的材料对紧密附近经过的电信号具有磁响应。铁氧体130响应于经过的高频信号产生的磁场与高频信号的相位改变相反地起作用，从而趋于减小信号的幅度(即强度)。因此，在本发明的实施例中应设计和定位铁氧体结构130使得其主体尽可能多地在所经过的电信号的紧密附近(优选地紧密围绕所经过的电信号)。自然地，对于铁氧体130的尺寸、形状和位置的实际设计选择将很大程度上由半导体器件的总体设计决定，包括其组元端子点的设计、和/或用于连接信号线的容许布局区域。
图4示出本发明的另一实施例，关于另一示例性端子点200。与图2所示的实施例不同，图4的球结构126形成在导电焊盘114的正上方(即与其垂直对准)。这里再次说明，居间UBM层124用来改善球结构126与导电焊盘114之间的电接触。然而，如关于图2所描述的那样，确定形状和尺寸的铁氧体结构230布置在球结构126与导电焊盘114之间。
图5A至5F多样地示出适于在半导体器件上与端子点相关地形成铁氧体结构的不同工艺。参照图5A，常规电镀或溅镀工艺可用来在基板110上形成导电焊盘114。导电焊盘114通过绝缘层112暴露，绝缘层112可利用例如常规工艺由氧化物层形成并构图。尽管为了清晰起见而未示出，但是导电焊盘114可多样地连接到形成在基板110中的(基本)水平设置的信号线、(基本)垂直设置的导电通孔、和/或下面的导电区域。实际上，术语“导电焊盘”应宽泛地理解为覆盖晶片级半导体器件上的任何导电点，电信号可持续或间歇地存在于该处。
然后由一种或更多绝缘或钝化材料例如氮化硅(SiN)形成的第一绝缘层118形成且构图在绝缘层112上从而暴露至少一部分导电焊盘114。然后再分布线120(例如，更一般的“信号线”的一个具体例子)形成在第一绝缘层118上且与导电焊盘114的暴露部分电接触。再分布线120可利用常规光刻和蚀刻技术由金属或金属合金形成并构图。之后，第二绝缘层122形成在再分布线120上且被构图从而形成暴露再分布线120的所需部分的接触井117。第二绝缘层122可被旋涂到再分布线120的上表面上且然后利用常规光刻和蚀刻工艺被选择性构图。接触井117可采用任何合理形状，只要它有效暴露足以确保端子点的完成的部分信号线或者替代的导电焊盘。
参照图5B，然后铁氧体层132形成在第二绝缘层122上从而覆盖接触井117附近的至少部分第二绝缘层122。铁氧体层132可由包括氧化铁和至少一种金属的任何材料成分形成，所述金属为例如镍(Ni)、锌(Zn)、锰(Mn)、钴(Co)、镁(Mg)、铝(Al)、钡(Ba)、铜(Cu)、铁(Fe)等以及/或者含有这些金属的任何金属合金。铁氧体层132可由单种均质材料层形成至所需厚度，或者它可以由具有可不同的材料成分的多层形成，包括例如适于改善与相邻元件的机械粘合以及电接触的材料层。铁氧体132可在单个处理步骤期间形成至所需厚度，或者它可以在多个顺序施加的工艺步骤期间逐渐增加地构建。在一些实施例中，铁氧体层132将形成至范围在约1000()至1μm之间的厚度。
一旦形成了铁氧体层132，利用常规技术形成且构图光致抗蚀剂层从而产生光致抗蚀剂图案140。光致抗蚀剂图案140定义将由铁氧体层132形成的铁氧体结构的几何形状。参照图5C，光致抗蚀剂图案140用来选择性去除铁氧体132的大部分从而产生铁氧体结构130。
参照图5D，在铁氧体结构130的形成之后，去除光致抗蚀剂图案140。粘合层133可以可选地形成在铁氧体结构130的上表面上从而改善与其它端子点元件例如UBM层或球结构(图5D未示出)的机械粘合和/或电接触。粘合层133可利用常规光刻和蚀刻工艺形成。在一个实施例中，粘合层133由包括Ti、Ta、以及Cr中的至少一种的材料形成。在粘合层133的形成之后，当使用时，UBM层和球结构可形成在铁氧体结构130上。因此，粘合层133存在时，在本发明的一些实施例中认为其构成铁氧体结构130的部分。
图5E示出适于形成与本发明的实施例一致的端子点的另一方法。这里，重复上面相关于图5A描述的所有示例性步骤。然而，一旦已形成接触井117，就形成光致抗蚀剂图案142从而选择性暴露接触井117附近(例如围绕接触井117)的一个或更多铁氧体形成区域135。然后例如在随后进行的电镀工艺期间该一个或更多铁氧体形成区域135收纳铁氧体材料从而形成铁氧体结构130。
这里再次说明，粘合层133可以可选地被包括作为铁氧体结构130的一部分。
如图5F所示，可通过形成籽层136促进参照图5E描述的示例性方法。籽层136可由例如第一(下)籽层和第二(上)籽层形成，该第一籽层由Ti或含Ti合金形成，该第二籽层由例如Cu、Ni、或含有这些元素的合金形成。在第二绝缘层122上形成籽层136之后，可形成且构图光致抗蚀剂层142。在铁氧体形成区域135中通过光致抗蚀剂图案142选择性暴露籽层136，最终形成铁氧体结构130的铁氧体材料可容易地沉积(例如电镀)在籽层136的暴露部分上。在铁氧体结构130的形成之后，去除光致抗蚀剂图案142以及籽层136的未被包括到铁氧体结构130中的部分。
前述示例性方法可被修改从而制造图4所示的端子点结构，其中导电焊盘114形成在球结构126的正下方(例如与其垂直对准)。在这样的情况下，UBM层124可形成在导电焊盘114上，其通过绝缘层112和第一绝缘层118暴露。在利用一种方法例如上面关于图5A至5F描述的方法在第一绝缘层118上形成铁氧体结构230之后，可以形成UBM层124。之后，球结构126安置在UBM层124上。
作为其中UBM层124形成在铁氧体结构130(或230)上的前述示例性实施例的替代，铁氧体结构130(230)可改为形成在UBM层124上。即，在通过绝缘层112和第一绝缘层118暴露部分导电焊盘114的接触井117的形成之后，UBM层124可形成在第一绝缘层118上，与导电焊盘114电接触。之后，利用诸如上述方法(例如参照图5E和5F描述的方法)的一种方法，铁氧体结构130(230)可形成在UBM层124上。在这样的实施例中，可选的粘合层133的使用会特别有用。即，粘合层133可形成在铁氧体结构130(230)与UBM层124之间，和/或铁氧体结构130(230)与球结构126之间。
图6和7共同示出本发明的另一实施例。然而，此示例性实施例涉及与信号线而不是端子点相关的铁氧体结构的设置。在前述实施例中，铁氧体结构形成在端子点(例如球结构126)的端部和导电焊盘之间。铁氧体结构示出为非常接近端子点的端部(例如围绕安置在接触井内的球结构的下部)。在一些实施例中，在直接以导电焊盘或信号线支持连接球结构的最顶层中铁氧体结构的这样的形成是优选的，因为这样的最顶层在制造工艺中可容易地到达，且形成铁氧体结构所需的制造步骤的序列可相应地最小化。
图6和7所示的示例将铁氧体结构的位置从端子点端部附近的区域移动到更接近于导电焊盘的位置。在一个实施例中，项圈形铁氧体结构430形成在连接球结构126和导电焊盘114的再分布线120周围。此布置示于图6中。在此上下文中，术语“项圈形”指的是铁氧体结构430基本围绕再分布线120的形状。项圈形铁氧体结构430的实际几何形状，特别是外部几何形状，可以不合椭圆形。在本发明的一个实施例中，项圈形铁氧体结构430紧密地围绕任何合理横截面形状的信号线，但是可以具有适于在信号线周围带来足够量的铁氧体材料的任何外部几何形状(规则或不规则)。
图7是相关剖视图，进一步示出形成在再分布线120周围时示例性铁氧体结构430的形状和设置。再分布线120和铁氧体结构430的此结合可夹在第一绝缘层118和第二绝缘层122之间。铁氧体结构对通过球结构126与导电焊盘114之间的信号线传输的信号的影响类似于前述铁氧体结构130和230的影响(即，它趋于抑制信号线传输的任何高频信号)。
本发明的一些实施例可受益于铁氧体结构远离球结构的安置位置的定位。本发明的另一些实施例可受益于沿信号线间隔地设置的多个铁氧体结构。实际上，图2或4所示的示例性铁氧体结构可在一些实施例中与图6和7所示的示例性铁氧体结构结合。
图8A至8E示出适于形成图6和7所示的铁氧体结构的示例性方法。参照图8A，第一绝缘层112形成在基板110上，第二绝缘层118形成在第一绝缘层112上。之后，第一铁氧体材料层432利用例如溅镀工艺形成在第二绝缘层118上。
参照图8B，然后光致抗蚀剂层形成且构图在第一铁氧体材料层432上从而形成具有暴露第一铁氧体材料层432的第一部分的第一开口的第一光致抗蚀剂图案440。第一光致抗蚀剂图案440中的第一开口根据再分布线120的几何形状形成。再分布线120的第一宽度示于图8B至8E中，但是本领域技术人员将理解，再分布线120通常还将以跨过基板110的确定长度形成。之后，可以使用例如电镀工艺来在第一光致抗蚀剂图案440内第一铁氧体材料层432的暴露部分上形成再分布线120。
参照图8C，第一光致抗蚀剂图案440可进一步被构图从而形成比第一铁氧体材料层432的第一暴露部分更大(即更宽)的暴露第一铁氧体材料层432的第二部分的第二开口。第一光致抗蚀剂图案440中的第二开口与要形成的铁氧体结构的第二宽度相关地确定。替代地，第一光致抗蚀剂层440可被去除且形成另一光致抗蚀剂层来定义第二开口，但是可认为此替代方式等价于第一光致抗蚀剂层440的再构图。
参照图8D，第二铁氧体材料层434形成在第二开口中从而与第一铁氧体材料层432的暴露的第二部分一起围绕再分布线120。以此方式，项圈形铁氧体结构430可形成在再分布线120周围。
参照图8E，第一光致抗蚀剂图案440被去除，至少一第二光致抗蚀剂图案442被形成且用来选择性去除第一和第二铁氧体材料层432和434从而完成具有所需长度的铁氧体结构430。之后，如图6和7所示，第二绝缘层122可形成在铁氧体结构430上。然后，可以按需形成端子点元件。
为了清晰起见，前述示例涉及目前出现的元件和技术。相关于实施本发明的实施例而确定了一般可得的材料。但是，本发明的范围不限于所示的例子或者示例性材料。例如，已经把球结构看作一种类型的晶片级端子点，但是许多其它结构可用来实施类似功能(例如连接性)。已经确认了一些常规制造工艺，其可以被本领域技术人员用于上述材料层和元件的形成。但是，任何合适的制造工艺可用于形成这些层和元件。
为了清晰起见，前面的描述涉及附图所示的示例。诸如“水平”、“垂直”、“在…上”、“上面的”、“在…下”、“跨过”和“穿过”等术语用作相关的描述性术语。这些术语不应归于强制性或字面解释，而应理解为表示示例性实施例中的可行关系。术语“在…上”用于描述其中层或元件直接形成在另一层或元件上的关系，以及其中存在居间层和/或元件的关系。
本发明的实际范围由所附权利要求定义。

Claims (44)

1.一种半导体器件，包括：
形成在基板上的导电焊盘；
电连接到该焊盘的端子点；以及
形成在该导电焊盘与该端子点之间的铁氧体结构。
2.如权利要求1所述的半导体器件，其中该端子点包括形成在该导电焊盘上且与之对准的凸块结构。
3.如权利要求2所述的半导体器件，其中该凸块结构包括由含有金属或金属合金的材料形成的球结构。
4.如权利要求2所述的半导体器件，还包括：
形成在该凸块结构与该导电焊盘之间的凸块下金属(UBM)层。
5.如权利要求4所述的半导体器件，其中该UBM层形成在该铁氧体结构与该凸块结构之间。
6.如权利要求2所述的半导体器件，其中该铁氧体结构具有围绕该凸块结构的一部分的项圈形。
7.如权利要求4所述的半导体器件，其中该铁氧体结构包括适用于收纳该UBM层的粘合层。
8.如权利要求1所述的半导体器件，其中该铁氧体结构由包括氧化铁、以及至少一种金属或金属合金的材料形成。
9.如权利要求6所述的半导体器件，其中该项圈形铁氧体结构包括椭圆形项圈、矩形项圈、或者多边形项圈。
10.如权利要求5所述的半导体器件，其中该导电焊盘由包括铜或铝的材料形成，该UBM层由包括钛、钨、镍、钽、铬或金的材料形成；
其中该铁氧体结构由包括氧化铁和至少一种金属或金属合金的材料形成，且其中该铁氧体结构包括形成在该铁氧体结构和该UBM层之间的粘合层。
11.如权利要求1所述的半导体器件，还包括：
电连接该导电焊盘和该端子点的信号线。
12.如权利要求11所述的半导体器件，其中该端子点包括凸块结构，且其中该铁氧体结构具有围绕该凸块结构的一部分的项圈形。
13.如权利要求12所述的半导体器件，其中该凸块结构包括由包括金属或金属合金的材料形成的球结构。
14.如权利要求12所述的半导体器件，还包括：
形成在该凸块结构与该导电焊盘之间的凸块下金属(UBM)层。
15.如权利要求14所述的半导体器件，其中该UBM层形成在该铁氧体结构与该凸块结构之间。
16.如权利要求15所述的半导体器件，其中该铁氧体结构包括适用于收纳该UBM层的粘合层。
17.如权利要求16所述的半导体器件，其中该铁氧体结构由包括氧化铁、以及至少一种金属或金属合金的材料形成。
18.如权利要求12所述的半导体器件，其中该项圈形铁氧体结构包括椭圆形项圈、矩形项圈、或者多边形项圈。
19.如权利要求12所述的半导体器件，其中该导电焊盘由包括铜或铝的材料形成，该UBM层由包括钛、钨、镍、钽、铬或金的材料形成；
其中该铁氧体结构由包括氧化铁和至少一种金属或金属合金的材料形成，且其中该铁氧体结构包括形成在该铁氧体结构和该UBM层之间的粘合层。
20.如权利要求11所述的半导体器件，其中该信号线包括再分布线。
21.如权利要求11所述的半导体器件，其中该铁氧体结构包括形成为基本围绕该信号线且形成在该导电焊盘和该端子点之间的项圈形铁氧体结构。
22.如权利要求11所述的半导体器件，其中该端子点包括球结构，且其中该铁氧体结构包括围绕该球结构的一部分的第一项圈形铁氧体结构以及基本围绕该信号线且形成在该导电焊盘和该球结构之间的第二项圈形铁氧体结构。
23.一种形成半导体器件的方法，包括：
在基板上形成导电焊盘；
在该基板上形成端子点；
在该导电焊盘和该端子点之间形成铁氧体结构。
24.如权利要求23所述的方法，其中形成该端子点包括：在该导电焊盘上且与之对准地形成凸块结构。
25.如权利要求24所述的方法，还包括：
在该导电焊盘和该凸块结构之间形成凸块下金属(UBM)层。
26.如权利要求25所述的方法，其中形成该UBM层包括在该凸块结构与该铁氧体结构之间或者在该铁氧体结构与该导电焊盘之间形成UBM层。
27.如权利要求23所述的方法，还包括：
在该基板上形成至少一个绝缘层从而暴露该导电焊盘的一部分；
在该至少一个绝缘层上接近该导电焊盘的该暴露部分形成项圈形铁氧体结构；
在该铁氧体结构上与该导电焊盘电接触地形成凸块下金属(UBM)层；以及
将球结构安置在该UBM层上从而形成端子点，使得该铁氧体结构围绕该球结构的至少一部分。
28.如权利要求27所述的方法，还包括：在该铁氧体结构上形成粘合层。
29.如权利要求23所述的方法，还包括：
在该基板上形成至少一个绝缘层从而暴露该导电焊盘的一部分；
在该至少一个绝缘层上与该导电焊盘电接触地形成凸块下金属(UBM)层；
在该UBM层上接近该导电焊盘的该暴露部分地形成项圈形铁氧体结构；以及
将球结构安置在该铁氧体结构上从而形成端子点，使得该铁氧体结构围绕该球结构的至少一部分。
30.如权利要求29所述的方法，还包括：在该铁氧体结构上形成粘合层。
31.如权利要求23所述的方法，还包括：形成连接该导电焊盘和该端子点的信号线。
32.一种形成半导体器件的方法，包括：
在基板上形成导电焊盘；
在该基板上形成第一绝缘层从而暴露该导电焊盘的至少一部分；
在该第一绝缘层形成电连接到该导电焊盘的该暴露部分的信号线；
在该信号线上形成第二绝缘层；
形成穿过该第二绝缘层的接触井从而暴露该信号线的一部分；
在该第二绝缘层上形成且构图铁氧体材料层从而在该接触井附近形成铁氧体结构；
在该接触井中与该信号线的该暴露部分电接触地形成端子点，使得该铁氧体结构在该端子点和该信号线的该暴露部分之间。
33.如权利要求32所述的方法，其中形成该端子点包括：
在该铁氧体结构上且与该信号线的该暴露部分电接触地形成凸块下金属(UBM)层；以及
使凸块结构安置在该UBM层上。
34.如权利要求33所述的方法，还包括：
在该铁氧体结构上形成该UBM层之前，在该铁氧体结构上形成粘合层。
35.如权利要求32所述的方法，其中形成且构图该铁氧体材料层包括：
在该第二绝缘层上形成铁氧体材料层；以及
在该铁氧体材料层上形成光致抗蚀剂图案且通过该光致抗蚀剂图案蚀刻该铁氧体材料层从而形成该铁氧体结构；且
其中形成该端子点包括：
在该铁氧体结构上且与该信号线的该暴露部分电接触地形成凸块下金属(UBM)层；以及
使凸块结构安置在该UBM层上。
36.如权利要求35所述的方法，其中该光致抗蚀剂图案定义适用于基本围绕该凸块结构的至少一部分的项圈形铁氧体结构。
37.如权利要求36所述的方法，还包括：
在该铁氧体结构上形成该UBM层之前，在该铁氧体结构上形成粘合层。
38.如权利要求32所述的方法，其中形成且构图该铁氧体材料层包括：
在该第二绝缘层上形成光致抗蚀剂层，及构图该光致抗蚀剂层从而定义至少一个铁氧体形成区域；以及
在该至少一个铁氧体形成区域中沉积该铁氧体材料层从而形成该铁氧体结构；且
其中形成该端子点包括：
在该铁氧体结构上且与该信号线的该暴露部分电接触地形成凸块下金属(UBM)层；以及
使凸块结构安置在该UBM层上。
39.如权利要求38所述的方法，其中该至少一个铁氧体形成区域定义适用于基本围绕该凸块结构的至少一部分的项圈形铁氧体结构。
40.如权利要求39所述的方法，还包括：
在该铁氧体结构上形成该UBM层之前，在该铁氧体结构上形成粘合层。
41.如权利要求38所述的方法，还包括：
在形成该光致抗蚀剂图案之前，在该第二绝缘层上形成籽层，使得该籽层的至少一部分通过该至少一个铁氧体形成区域暴露；且
其中在该至少一个铁氧体形成区域中沉积铁氧体材料层包括将铁氧体材料层电镀到该籽层的该暴露部分上。
42.一种形成半导体器件的方法，包括：
在该基板上形成绝缘层；
在该绝缘层上形成第一铁氧体材料层；
形成且构图第一光致抗蚀剂图案从而形成暴露该第一铁氧体材料层的第一部分的第一开口；
在该第一铁氧体材料层上该第一开口中形成信号线；
构图该第一光致抗蚀剂图案从而在该信号线周围形成比该第一开口大且暴露该第一铁氧体材料层的第二部分的第二开口；
在该第二开口中形成第二铁氧体材料层，使得该第一铁氧体层的该暴露的第二部分与该第二铁氧体层的结合基本围绕该信号线；
在该第二铁氧体材料层上形成第二光致抗蚀剂图案；以及
利用该第二光致抗蚀剂图案作为掩模，形成基本围绕该信号线的包括该第一铁氧体层的该暴露的第二部分与该第二铁氧体层的结合的铁氧体结构。
43.如权利要求42所述的方法，还包括：
在该基板上形成导电焊盘和端子点，其中该信号线电连接该导电焊盘和该端子点。
44.如权利要求43所述的方法，其中该信号线是再分布线。
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