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CN103213935B - two-dimensional device array - Google Patents

two-dimensional device array Download PDF

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Publication number
CN103213935B
CN103213935B CN201310075846.7A CN201310075846A CN103213935B CN 103213935 B CN103213935 B CN 103213935B CN 201310075846 A CN201310075846 A CN 201310075846A CN 103213935 B CN103213935 B CN 103213935B
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CN
China
Prior art keywords
interconnection
substrate
stretchable
assembly
device array
Prior art date
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CN201310075846.7A
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Chinese (zh)
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CN103213935A (en
Inventor
J·A·罗杰斯
M·梅尔特
孙玉刚
高興助
A·卡尔森
W·M·崔
M·斯托伊克维奇
H·江
Y·黄
R·G·诺奥
李建宰
姜晟俊
朱正涛
E·梅纳德
安钟贤
H-S·金
姜达荣
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University of Illinois
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University of Illinois
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
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    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0133—Elastomeric or compliant polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09045—Locally raised area or protrusion of insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0271—Mechanical force other than pressure, e.g. shearing or pulling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
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Abstract

The present invention provides two-dimensional device array.On the one hand, the invention provides stretchable and be optionally printable assembly, such as quasiconductor or electronic component, it can provide superperformance in stretching, compression, bending or when deforming, and manufactures or adjust the correlation technique of such stretchable assembly.For some applications, preferably stretchable quasiconductor and electronic circuit are flexibility, are also stretchable in addition, and therefore, it is possible to significantly along the prolongation of one or more axis, flexure, bending or other deformation.Additionally, the stretchable quasiconductor of the present invention and electronic circuit are suitable to the device architecture of wide scope, to provide electronics and the opto-electronic device of full flexible.

Description

Two-dimensional device array
The application be the applying date be September in 2007 6 days, entitled " in the quasiconductor interconnection for stretchable electronic component With the controlled warp architecture in nanometer film " No. 200780041127.6 application for a patent for invention divisional application.
Cross-Reference to Related Applications
This application claims enjoying the U.S. Provisional Patent Application 60/944,626 submitted on June 18th, 2007 and 2006 The rights and interests of the U.S. Provisional Patent Application 60/824,683 of on September submission in 6,.
Background technology
Since the all-polymer transistor of rollout printing in 1994, the substantial amounts of concern of people has been directed to electronics The possible new category of system, it includes the flexible integration electronic device in plastic.[Science volume 265 the 1684th Page 1686, author Garnier F., Hajlaoui R., Yassar A. and Srivastava P.] recently, numerous studies by The new solution of guiding exploitation can process the material of (solution processable), and it is used for leading of flexiplast electronic device The element of body, electrolyte and quasiconductor.However, the progress in flexible electronic component field, it is not only and can be processed by new solution The development of material is driven, but also is by the new apparatus assembly that can be applicable to flexible electronic device system（component） The high-efficiency machining method of geometry, device and apparatus assembly and high resolution design technology are driven.It is contemplated that Such material, device architecture and manufacture method are by the flexible integration electronic device of the new category of emergence, system and circuit rapidly In play an important role.
Focus in flexible electronic component field carry out several important advantage that technology since then is provided.For example, these The intrinsic flexibility of backing material, and allow them to be integrated into many shapes, this provides substantial amounts of useful device architecture, so And these device architectures are impossible for traditional fragility silicon-based electronic devices.Additionally, solution can processing assembly material Material and the combination of flexible substrate, enabling manufactured by continuous, high speed printing technology, this can be with low cost relatively Electronic device is produced on big substrate area.
The design of flexible electronic device and manufacture show good Electronic Performance, but there is also some great challenges. First, the maturation method making traditional silicon-based electronic devices is incompatible with most of flexible materials.For example, traditional high-quality is no Machine semiconductor subassembly, such as monocrystal silicon or germanium semiconductor, generally pass through in the melt temperature significantly beyond most of plastic Or decomposition temperature temperature (>1000 degrees Celsius) under growing film and be machined from.Additionally, most of inorganic semiconductor essence On be insoluble in the solvent being easy to solution is processed and transmits.Secondly although many amorphous silicons, organic or be mixed with Machine-inorganic semiconductor is suitable for including flexible substrate and can processing at relatively low temperatures, but these materials do not have can The characteristic electron of good Electronic Performance is provided for integrated-optic device.For example, there is the semiconductor element being made up of these materials These thin film transistor (TFT)s, present the field-effect mobility of about three orders of magnitude less than complementary monocrystalline silicon-based devices.Due to These limit, and flexible electronic device is currently limited to not require high performance application-specific, is such as used for non-luminescent In the switch element of active-matrix flat faced display of type pixel and among light emitting diode.
Flexible electronic circuit is all active survey region in multiple fields, including flexible display, arbitrary shape Electro-active surface, such as electronic textile and electronic skin.These circuit are often because it cannot respond to make in the change of construction Obtain conductive component stretching, and can not fully adapt to their surrounding.Thus, in serious and/or repeatedly structural change Under, these flexible circuits are easy to impaired, electronics and degenerate and may be unreliable.Flexible circuit needs stretchable and flexible Interconnection（interconnect）, this remains intact while being interconnected in cyclically stretched and lax.
Can either bend and have resilient conductor, typically by metal embedded in the elastomer of such as silicon etc Grain is manufacturing.These conductive rubbers had not only had mechanical elasticity but also had had electric conductivity.The shortcoming of conductive rubber is included in stretching shape High resistivity under state and significant resistance variations, thus lead to overall interconnection performance and less reliable.
Gray et al. discusses and constructs elastomer electronics device using the micro Process bent wire being encapsulated in silicone elastomer Part, it can withstand up to 54% linear strain while keeping electric conductivity.In here research, electric wire is formed spiral Spring shape.As compared to the linear electric wire accusing fracture under low strain dynamic (for example, 2.4%), bent wire should in considerably higher Become and remain in that electric conductivity under (for example, 27.2%).Such electric wire geometry depend on electric wire by bending and non-stretching and The ability of elongation.This system is subject in terms of the ability of patterning controllably and accurately in different shape and in Different Plane To limiting, thus limit that system is adapted to differently strained and bending scheme ability.
Research shows, elastically stretchable metal is interconnected in and increased in the resistance to mechanical strain（Mandlik etc. People, 2006）.Mandlik et al. attempts to minimize by deposited metal film on pyramid nano-patterning surface this Resistance variations.However, this research depends on relief feature part（relief feature）, it produces micro-crack and makes thin gold Belong to electric wire and possess tensility.These micro-cracks promote metallic elastic to deform by planar distortion and deformation.However, these are golden Belong to the metal film that crackle is not suitable for thickness, on the contrary, be appropriate only for being deposited on the thin of the suitable close limit on the elastomer of patterning Metal film (for example, in the order of magnitude less than 30nm).
Make metal interconnect to possess a kind of mode of tensility and be, in conductor（For example, metal）Pre- to substrate during application Plus strain (for example, 15%～25%), then carry out the physical relief of prestrain, thus introduce corrugated to metallic conductor interconnection (for example see Lacour et al. (2003)；(2005)；(2004), Jones et al. (2004)；Huck et al. (2000 Year)；Bowden et al. (1998)).Lacour et al.（2003）Report, is produced from initiation wrinkle by compressing gold bar first Gold bar, thus under up to 22% strain (gold thin film in contrast elastomeric substrate is only the breaking strain of a few percent) Keep the conductance general character.However, this research is using the metal film of opposed lamina (for example, about 105nm), and this research more office Limit because this system originally can be formed can be stretched about 10% electric conductor.
From the above it will be apparent that existing to the tensility with improvement, electrical characteristics and being used under different structure Rapidly and reliably manufacture the interconnection of the correlated process of stretchable interconnection and the needs of apparatus assembly.In flexible electronic component field In progress it is contemplated that will play an important role in multinomial emerging and ripe important technology.However, these flexible electronic units The success of the application of part technology, be strongly dependent on to new material, device architecture and viable commercial in bending, deformation With the manufactures approach showing good electronics, machinery and the integrated electronic circuit of light attribute and device under oblique structure Exhibition.Specifically, high-performance, can the material of mechanical stretching and the structure of device, need show in stretching or compressed configuration Useful electronics and mechanical property.
Content of the invention
The present invention provides tensile means and apparatus assembly, such as quasiconductor and stretchable electronic device, and circuit.Need Stretchable, flexible with consistent electronic device and apparatus assembly are used for manufacturing the electricity being suitable to printing on various curved surfaces Sub- device.The consistent device of shape has various ranges of application, from flexible display and electronic textile, to consistent Biology and physical sensors.Thus, one embodiment of the invention be flexible and flexible electronic device, apparatus assembly with And for manufacturing the correlation technique of flexible and flexible device.This flexibility and flexible, have wavy by offer or stick up The interconnection of rib geometry or semiconductor film and realize.This geometry provides following manner, is used for guaranteeing that system is stretchable And flexible, and performance is had no adverse effect, even if being also such under powerful and stretching repeatedly and/or bend cycles.This Outward, methods described provides the ability making geometry precision and accuracy, so that the physics of device and/or apparatus assembly is special Property（For example, tensility, flexible）The adjustable service condition being adapted to suitable system.Another aspect of the present invention is tool The stretchable assembly having and straining at least partly related physical characteristics, enables to by applying number change to assembly Strain and regulation parameter.
The array of apparatus assembly can be connected to each other by warp assembly or interconnection, so that apparatus assembly is easy to carry out relative to each other Uncorrelated movement.However, the regional area within this array, can have will different from the bending in other regions or stretching Ask.Apparatus and method for described herein promotes to create flexiblesystem, and it can have in warp assembly or in interconnection geometry Localized variation, for example include assembly or interconnection：Size, cycle, amplitude, orientation and assembly or mutually in a particular area Sum even.Produce multiple assemblies with controllable orientation or interconnection it is easy to make assembly or interconnection for the operation of this device Condition is adjusted adapting to.
In one embodiment, the present invention is the stretchable assembly of device, wherein said assembly comprise first end, second End and the middle section being arranged between first end and the second end.Assembly is supported by a substrate, wherein the first end of assembly and Second end is attached to substrate, and at least a portion of the middle section of assembly has warp architecture.On the one hand, in this assembly Centre region not with this substrate physical contact.On the other hand, the middle section of assembly is under strain.On the one hand, central area The strain in domain is less than 10%, between 0.1% and 5%, between 0.2% and 2%, or any of which subrange.
In one embodiment, stretchable assembly middle body is curved surface or arc.On the one hand, curved surface has width Degree, the such as amplitude between about 100nm and 1mm.On the one hand, the quantity of the calmodulin binding domain CaM of discrete assembly or interconnection More than two, such as three, four or five can be amounted to.In this regard, positioned between the first end of assembly and the second end Middle section is actually subdivided into multiple warp architecture regions, so that the multiple discrete curved portion region being formed is not With substrate physical contact.In such joining, amplitude and/or cycle can be constant on the whole longitudinal length of assembly or interconnection Also alterable.Assembly itself can be arbitrary shape, for example film, line or belt.On the one hand, in the case that assembly is band, should Band can have the thickness between about 300nm and 1mm.
For the ease of placing other apparatus assembly, the apparatus assembly that assembly end is electrically connected to can be touch pad.One Aspect, apparatus assembly in addition is electrically connected with touch pad.
Stretchable assembly alternatively includes one or more material, and it is metal, quasiconductor, insulator, piezoelectric, ferrum Electric material, magnetostriction materials, electrostriction material, superconductor, ferromagnetic material and thermoelectric material.
On the other hand, stretchable assembly includes the assembly of the device in following group：Electronic device, optics device Part, photoelectric device, mechanical devices and thermal device.
As discussed, the substrate of support component can be made up of any desired material, this depends on being incorporated to the device of this assembly Part.In one embodiment, substrate includes elastomeric material, such as PDMS.Substrate can be with reversible deformable（For example, PDMS） Or irreversible deformable（For example：Plastics）.In one embodiment, substrate itself is layer or coating.
In one embodiment, device can be further described based on the physical characteristics of device.For example, provided herein Assembly and/or interconnection, can stand up to 25% strain, and holding simultaneously conducting and electrically connecting with apparatus assembly.In this feelings " keep " in condition referring to during bearing strain, the reduction of the conductance general character is less than 20%, 10% or 5%.
In another embodiment, the present invention provides a kind of stretchable assembly or interconnection, for setting up and apparatus assembly Electrical connection.Device or interconnection have first end, the second end and are arranged at the middle body between first end and the second end.Institute State end and be incorporated into substrate, such as flexible（For example, stretchable）Substrate, elastomeric substrate, rigid substrate, inelastic body substrate, Or wish the substrate of printed electronic device, apparatus assembly or its array thereon.Each end of assembly or interconnection is all attached to Its own is by the different apparatus assembly of substrate supports.The middle body of assembly or interconnection is in warp architecture, and not with substrate Physical contact（For example, it is not associated with）.On the one hand, warp architecture is under strain because of central area.In this regard, bend Structure is usually curved surface, if so that exerting a force to one or more apparatus assemblies by the way of so that apparatus assembly is separated （Or lower substrate）, then assembly and interconnection curvature portion can at least partly stretch to adapt to the relative shifting between apparatus assembly Dynamic, it is simultaneously held in the electrical contact between apparatus assembly.Assembly or interconnection are alternatively with multiple geometry knots of such as bridge shape, flower-shape In structure any one and/or by multiple assemblies or interconnection by adjacent island or touch pad electrical connection.On the one hand, apparatus assembly With touch pad electrical connection.
Any stretchable assembly disclosed herein alternatively also includes the scalable apparatus assembly of electronic device.Scalable group Part has at least one following characteristic electron, and it optionally becomes with the strain of the middle section being provided by warp architecture Change.For example, characteristic electron is alternatively one or more of electron mobility, resonant frequency, conductance and resistance.In a side Face, scalable apparatus assembly includes the semiconductor channel of transistor.
In one embodiment, described assembly has that the coefficient of strain is optical coupled, and wherein adjustable component has at least A kind of following optical characteristics, its degree of strain with the middle section being provided by warp architecture and optionally change.Should The optical coupled embodiment of variable coefficient includes but are not limited to, the refractive index of scalable apparatus assembly, or the entering of electromagnetic radiation The angle of incidence on the surface of the middle body with respect to described stretchable assembly for the ejected wave bundle.In another embodiment, scalable device Part assembly includes waveguide, photomodulator, photoswitch or light filter.
In another embodiment, stretchable assembly is the scalable apparatus assembly of device, its heat conductivity optionally with The degree of strain of the middle section being provided by described warp architecture and changes.
In another embodiment, stretchable assembly is the heat insulation assembly of device, wherein said middle section not with institute State substrate physical contact.In the one side of this embodiment, middle section is not thermally contacted with substrate, and central region support one Or multiple apparatus assembly, so that being thermally isolated with substrate by one or more apparatus assemblies of central region support.This respect A useful application be for use as the device of long wavelength imaging system.
In another embodiment, stretchable assembly is the actuator of mechanical devices, and wherein middle section is curved surface, and its Amplitude by compression or can stretch stretchable assembly or by adjusting to middle section applying potential.In this embodiment A kind of useful application is a kind of mechanical devices, and it is selected from the group of following composition：Micro electro mechanical device, nano-electromechanical device, And micro-fluidic device.
In one embodiment, by arbitrarily stretchable assembly disclosed herein is included have multiple assemblies and be more than two The device array of individual apparatus assembly, provides multi-axially stretchable and bending.In this embodiment, each assembly provides one To the electrical contact between apparatus assembly.According to desired stretching, bending and/or squeeze operation condition, device array can have It is in grid, flower-shape, bridge shape or its combination in any（For example, a region is in lattice structure, and another region is in bridge shape knot Structure）Geometry.Additionally, being connectable to more than one assembly by making adjacent devices assembly（For example, multiple interconnection）, all As two, three, four assemblies, there is provided the further control to stretching and flexible.For example, the device of square or rectangle Assembly, can be adjacent with four other apparatus assemblies.If each phase adjacency pair is connected by two, apparatus assembly will have Eight interconnection extending therefrom.
In one embodiment, device array has the multi-grade module along at least two different directions orientations.For example, exist In lattice structure, assembly can have two perpendicular to one another or orthogonal orientations to provide the ability along both direction stretching.Another In one embodiment, device array may include the assembly all aliging relative to each other.This embodiment can be used on stretching or curved In the case that song is restricted to single direction（For example：Electronic device construction is bent into periphery）.By making assembly along three Individual or more directions are orientated, such as, along three directions or four direction orientation, provide for extra bending and/or stretching energy Power.In one embodiment, it is placed in any number of different layers by making the assembly in device array, for example adjacent one another are In two layers, provide for extra control and stability.
In one embodiment, device array can stand up to 150% strain and not rupture.By for operation Condition（For example, uniaxially contrast multi-axially stretchable and/or bending）Adjust the geometry interconnecting, orientation, amplitude, cycle sum Amount, makes breaking strain maximize.
The substrate supporting interconnection or device array thereon can have a part of at least one curved surface, for example concave surface, convex surface, Semi-spherical shape or a combination thereof.In one embodiment, the device comprising assembly is one of following stretchable device or many Kind：Photodetector, display, luminescent device, photoelectric device, piece scanner, LED display, semiconductor laser, optical system System, Large area electronics, transistor or integrated circuit.
On the other hand, the present invention relates to being used for the various distinct methods of the characteristic of stretchable assembly of adjusting means.Example As, a kind of control method can include providing following device, and it has stretchable assembly, as disclosed herein, for example following assembly, It has first end；Second end；And be placed in middle section between described first end and the second end, and this assembly is propped up by substrate Support.Specifically, the first end of assembly and the second end are attached to described substrate, and at least a portion tool of the middle section of assembly There is warp architecture and be under specific strain degree.By compression, elongation and/or the stretchable assembly of stretching, in stretchable assembly Middle adjustment degree of strain, thus the characteristic of the stretchable assembly of adjusting means.
On the one hand, described characteristic is one or more of light characteristic, electrical characteristics and mechanical property, such as optical coupling, Mechanical couplings or the strain parameter of electric coupling, the amplitude of wherein individual features depends, at least partially, on straining.On the other hand, Described characteristic is selected from resonant frequency, electron mobility, resistance, conductance, the incidence wave of refractive index, heat conductivity and electromagnetic radiation The group of the angle of incidence composition on the surface with respect to the middle body of described stretchable assembly for the bundle.
On the one hand, there is provided a kind of method of the stretchable assembly manufacturing device.In this embodiment, provide and have Receive the elastomeric substrate on surface, this receiving surface has the first degree of strain, wherein to strain be alternatively zero, compress or stretch Long.One or more apparatus assemblies are incorporated into the receiving surface with the first degree of strain.To elastomeric substrate applying power, from And produce degree of strain from the first degree of strain to the change of the second degree of strain.The amplitude of this change, or how to complete Change, be not critically important, as long as degree of strain leads to assembly to bend from the first degree to the change of the second degree, thus producing institute State one or more stretchable assemblies, each has the first end being attached to substrate and the second end and carries in warp architecture For middle section.
Apparatus assembly is attached to by described substrate by any suitable mode.In one embodiment, include in conjunction with step, Produce the combination of stretchable assembly and the pattern in uncombined region, the calmodulin binding domain CaM of wherein stretchable assembly is incorporated into elastomer Substrate, and the uncombined region of wherein said stretchable assembly is not joined to elastomeric substrate.
On the other hand, uncombined region corresponds to the middle section of stretchable assembly, wherein exerts a force to elastomer The step of substrate lead to middle section bend so that at least a portion middle section of each stretchable assembly not with substrate thing Reason contact.On the one hand, the step exerting a force to elastomeric substrate, leads to middle section to bend, so that each is stretchable At least a portion of the middle section of assembly not with substrate physical contact.
In one embodiment, any one method for manufacturing stretchable assembly be additionally included in stretchable assembly, Receiving on surface or not only on stretchable assembly but also on the receiving surface of elastomeric substrate of elastomeric substrate, produces and combines The pattern in site.
In another embodiment, any methods described or device are respectively provided with multiple flexible regions and multiple rigid region The elastomeric substrate in domain.This substrate makes the flexural rigidity of flexible region be less than the flexural rigidity of rigid region, and alternatively has Have：First and second ends of each stretchable assembly, it is attached at least one rigid region；And each stretchable assembly Middle section, it is attached at least one flexible region.Just it is capable of the figure of flexibility based on lower substrate using this substrate type Case is realizing the controllable warp of this assembly.
In one embodiment, the power machinery being applied to elastomeric substrate is realized.In one aspect of the invention, the first strain Degree, the second degree of strain or both, produce in the following way：Stretching or compresses elastomeric substrate, curing elastomer serves as a contrast Bottom, or thermally, for example, pass through to improve or reduce the temperature of described elastomeric substrate, or swollen by the heat of elastomeric substrate Swollen or hot induction is shunk.
In another embodiment, one or more apparatus assemblies are attached to this step of receiving surface of elastomeric substrate Suddenly, executed before following steps, i.e. to elastomeric substrate applying power, this power makes the degree of strain in substrate produce from first Degree is to the change of the second degree of strain different from the first degree.Alternatively, this is held after following steps with reference to step OK, i.e. to elastomeric substrate applying power, the degree of strain in substrate is made to produce from the first degree to different from the first degree in this The second degree of strain change.
In one embodiment, in the first degree of strain or the second degree of strain, any one is equal to 0.On the one hand, appoint One apparatus assembly of meaning includes interconnection or electrode.
In another embodiment, the present invention relates to the warp group with the electrical connection of apparatus assembly can be built for manufacture Part or the various distinct methods of interconnection.On the one hand, the pattern of binding site is applied to elastomeric substrate surface, assembly or mutual Connect or both.Applying power is so that substrate and the assembly contacting with this substrate or interconnection produce strain.The pattern of binding site There is provided between specific components or interconnection location and substrate and combine.Once（By eliminating power）Lax substrate, just produces warp group Part or interconnection.One or more of the amplitude of prestrain, binding site pattern, geometry and interval are become Change, just produce assembly or the interconnection with different warps or wavy geometry.For example, the position of staggered binding site, So that adjacent assembly or be interconnected in different positions and be attached to substrate, it is provided with " out-phase " interconnection geometry.Bound site Dot patternization adopts any mode well known in the art, for example, curable photosensitive polymer is applied to elastomeric substrate surface. Assembly or interconnection are encapsulated in the encapsulating material of such as elastomeric material alternately through by least a portion of assembly or interconnection To protect.Warp assembly or interconnection can have any pattern being suitable to this application.In one embodiment, pattern is grid knot Structure, flower-like structure, bridge shape structure or its combination in any.
Methods described and device can have the assembly of any size, such as from 10 nanometers to about 1 millimeter in the range of Thickness, or the greater than about thickness of 300nm.On the one hand, warp assembly has the maximum perpendicular position starting with interconnection from substrate The corresponding amplitude of phase shift, and this amplitude is selected from the scope between 100nm and 1mm.For the assembly with length and width Band, width, amplitude or width and amplitude, alternatively along the length change of interconnection.One factor of impact amplitude is, Assembly combines before or assembly combines the strain being applied to elastomeric substrate afterwards.Generally, strain is higher, and amplitude is bigger.One In embodiment, the power being applied produces strain in elastomeric substrate, and strain is selected between the scope between 20% and 100%.
In one embodiment, assembly is electrically connected to the interconnection of apparatus assembly.Any system being represented at this and mistake Journey optionally provides a kind of substrate, and it can stretch and be up to about 100%, and compression is up to about 50%, or is bent into and low reaches 5mm Radius of curvature, and will not assembly fracture.Described assembly is made up of the material being arbitrarily suitable for, such as metal, quasiconductor bag Include GaAs or Si, insulator, piezoelectric, ferroelectric material, magnetostriction materials, electrostriction material, superconduction, ferromagnetic material, And thermoelectric material.In one embodiment, methods described is used for warp assembly from such as die（stamp）Elastomeric substrate It is transferred to the device substrate of such as curved surface device substrate.
Can such as have the receiving surface of relief feature by assembly material is coated to receiving surface, for example wavy Surface, to manufacture stretchable and flexible interconnection, rather than by raised to produce to elastomeric substrate applying power or strain Or the assembly of warp.
In one embodiment, for manufacturing stretchable and flexible assembly, there is the substrate quilt of wavy feature from the teeth outwards Smoothing, for example spin on polymers is to be partially filled with recess feature.It is partially filled with and produce smooth wavy substrate.Subsequently, wrap Include but be not limited to the assembly of metallicity, be deposited and patterned as needed and smooth on wavy substrate.Receiving surface lining Assembly on bottom, can be used for subsequently being moulded polymeric stamp against at least applying coated with the substrate of assembly.By moving from substrate Except polymeric stamp, assembly is transferred to elastomeric substrate, to manufacture stretchable and flexible assembly.In an embodiment In, the interface between assembly and substrate is Au/Su-8 epoxy resin photoresist.Assembly can be layered metal, for example, Au/Al.Substrate can similarly be layered, and for example glassy layer supports Su-8 layer, and the actual interface between metal and substrate is Au/Su-8.
For manufacturing a kind of alternative method of the such as lug assemblies of projection interconnection in stamp surfaces, depend on：By song The planarization of face substrate surface, by component touch to the surface being flattened, then allowing substrate surface, lax to return to its curved surface several What shape.In one embodiment, methods described also provides the spatial patterned to binding site before contact, as in this institute State.In this embodiment, methods described is particularly suited for for interconnection and apparatus assembly being transferred to corresponding second curved substrate table Face.On the one hand, combination, such as binding agent or adhesive precursor, produce interconnection system on first surface substrate with Combination between second curved substrate is it is sufficient to allow interconnection system to be transferred to the second substrate, even in elastomeric stamp quilt Also it is such after removing.
On the one hand, any means of the present invention and device have die or elastomeric substrate, and it is PDMS, for up to About 40% strain has linear and elastic response.The interconnection of the present invention is alternatively stretchable electrode, stretchable passive type square Matrix LED display or a part for photodetector array.In one embodiment, the present invention is a kind of stretching electronic device, It carries any one or more interconnection being made up of the method for the present invention, and wherein electronic device is stretchable or flexible： Electrode, passive matrix LED, solaode, light collector array, biosensor, chemical sensor, photodiode battle array Row or semiconductor array.On the one hand, it is electrically connected to the apparatus assembly of warp interconnection, be thin film, sensor, component, control Element processed, microprocessor, changer or a combination thereof.On the one hand, by one end of interconnection is electrically connected to apparatus assembly, to connect Logical interconnection.
In one embodiment, the present invention relates to have such as wavy semiconductor nano film the method for wavy nanometer film and Structure.Such wavy nanometer film is easy to make apparatus assembly itself possess flexibility（Mutual with respect to couple together apparatus assembly Flexibility even）.On the one hand, the present invention is a kind of method manufacturing biaxially stretchable semiconductor film, and it is by semiconductor nano From the first substrate transfer to the second substrate deforming, the substrate wherein deforming after transfer is allowed to relax and returns to it membrane material Idle structure.On the one hand, the thickness of semi-conducting material is between about 40nm and 600nm.The two-dimentional deformation force of release, produces There is the nanometer film of two-dimentional wavy texture.On the one hand, deformation force is produced by the temperature changing elastomeric substrate.
In one embodiment, a kind of method for manufacturing stretchable and flexible substrate is provided, including：There is provided such as Lower substrate, it has the receiving surface with one or more relief feature；So that relief feature is smoothed by spin on polymers, Surface is received with conformal coating at least in part；Against the substrate molded polymer die being spun on；From substrate removing polymer Die, to expose the polymer stamp with relief feature；And sink in the described polymer stamp surface with relief feature Long-pending apparatus assembly；Thus manufacturing stretchable and flexible assembly used in stretchable and flexible device.On the one hand, rise Volt is characterized as wavy shape.
In one embodiment, described assembly includes metal, the method deposition by electrode deposition for this metal, or logical Cross：Shadowmask is provided；Shadowmask is contacted with running surface；And pass through shadowmask evaporated metal, with wavy table Corresponding metal pattern is produced on face.The substrate with wavy feature is alternatively by anisotropic etching Si (100) or by right Su-8 embosses and prepares.Running surface alternatively has the wavelength selected from 50nm-1mm scope；Have selected from 100nm-1mm scope Amplitude；And up to 100% can be stretched and do not rupture.Alternatively, this assembly is transferred to device substrate.On the one hand, device Assembly includes interconnecting, and methods described also includes providing other apparatus assembly and creating in one end of interconnection and other device Electrical connection between part assembly.
On the other hand, the invention provides a kind of by material level is heterogeneous integrated and/or the heterogeneous integrated technology of device level The method manufacturing device.The method for manufacturing device of the present invention comprises the steps：I () provides following substrate, it adopts One or more apparatus assembly prepatterned by the receiving surface support of substrate；And (ii) passes through described printable semiconductor Element contact print receiving in surface or the structure that arranges thereon to substrate, multiple printable semiconductor elements are assembled in lining On bottom, a part of printable semiconductor elements of wherein at least are positioned such that they and the one or more devices by substrate supports Part assembly：Spatial alignment, electrical contact or not only spatial alignment but also electrical contact.In one embodiment, printable semiconductor elements are every One all includes single inorganic semiconductor structure, and it has：Selected from about 100 nanometers of length to about 1000 micrometer ranges, Selected from about 100 nanometers of width to about 1000 micrometer ranges, with selected from about 10 nanometers to about 1000 micrometer ranges Thickness.
On the other hand, the present invention provide a kind of by material level is heterogeneous integrated and/or the heterogeneous integrated technology of device level Lai The method manufacturing multi-stage devices structure.The method for manufacturing device of the present invention comprises the steps：I () provides following lining Bottom, it adopts the one or more apparatus assembly prepatterned being supported by the receiving surface of substrate；(ii) pass through to can print Semiconductor element contact print is received on surface or in one or more structures of being arranged on to substrate, group on substrate Fill first group of printable semiconductor elements, thus producing the first device layer；(iii) above carry in first group of printable semiconductor elements For an intermediate layer, this intermediate layer has a receiving surface；And (iv) passes through printable semiconductor elements contact print to centre In the one or more structures received on surface or be arranged on of layer, in second group of printable semiconductor unit of substrate over-assemble Part, thus produce the second device layer.In one embodiment, at least in the printable semiconductor elements in the first device layer Part and at least a portion spatial alignment of printable semiconductor elements in the second device layer, electrical contact or not only spatial alignment but also electric Contact.The concrete grammar of this one side of the present invention also comprises the steps：Build can print in the first device layer partly to lead At least a portion of volume elements part and the electrical connection between the printable semiconductor elements at least a portion in the second device layer.
In the method be used for assemble, organize and/or integrated printable semiconductor elements useful method of contact printing, Including the printing of dry transfer contact, micro- contact or nano contact printing, micro- transfer or nanometer transfer printing and self assembly auxiliary printing. Contact print is beneficial to the present invention, because it allows multiple printable semiconductors relative to each other group in selected orientation and position Fill and integrated.Contact print in the present invention also allows to include quasiconductor to different classes of material and structure（For example, Inorganic semiconductor, single crystal semiconductor, organic semiconductor, carbon nanomaterial, etc.）, electrolyte, conductor effectively turned Print, assemble and integrated.The method of contact printing of the present invention optionally provides, with respect to one or more prepatterned in device On the pre-selected locations and spatial orientation of the apparatus assembly on substrate, printable semiconductor elements are carried out with pinpoint accuracy record transfer And assembling.Contact print is also compatible with plurality of classes substrate, including：Traditional rigid or semi-rigid substrate, such as glass, pottery And metal；And there is the substrate of the physics being suitable to application-specific and mechanical property, such as flexible substrate, flexible substrate, can Mould substrate, deformable substrate and/or stretchable substrate.The contact print assembly of printable semiconductor structures, for example compatible in K cryogenic treatment（For example, less than 298K）.This realizes existing optical system owing to permission using multiple backing materials, including that A little backing materials decomposing at high temperature or degenerating, such as polymer substrate and plastic.Components are carried out with contact print Brush transfer, assembling and integrated be also beneficial because it can be by low cost and the printing technology of high production and system are come in fact Existing, such as volume to volume printing and flexographic printing processes and system.
In the specific embodiment of the current method manufacturing device, at least a portion of printable semiconductor elements includes different Matter semiconductor element.Multiple heterogeneous semiconductor elements can be used for the present invention.In an embodiment or embodiment, heterogeneous semiconductor Element includes combining the inorganic semiconductor structure of one or more following structures, and described structure comprises one kind and is selected from following group The material of the group becoming：There is the inorganic semiconductor differently composed with described inorganic semiconductor structure, have and inorganic partly lead with described The inorganic semiconductor of body structure different doping ratio, carbon nanomaterial or its film, organic semiconductor, dielectric material and conductor.? In one embodiment, for example, heterogeneous semiconductor element comprises the combination of two kinds of different semi-conducting materials, described semi-conducting material choosing The freely combination of the group of following composition：Monocrystal silicon, Si, Ge, SiC, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs、GaSb、InP、InAs、InSb、ZnO、ZnSe、ZnTe、CdS、CdSe、ZnSe、ZnTe、CdS、CdSe、CdTe、HgS、 PbS, PbSe, PbTe, AlGaAs, AlInAs, AlInP, GaAsP, GaInAs, GaInP, AlGaAsSb, AlGaInP, SiGe and GaInAsP.In one embodiment, for example, heterogeneous semiconductor element comprises inorganic semiconductor structure, and this structural grouping has dielectric Material, conductor or existing dielectric material have conductor again.
Useful heterogeneous semiconductor element also includes printable apparatus assembly and printable device.In one embodiment, For example, printable semiconductor elements comprise the printable assembly of one or more of group selected from following device composition：Electronics Device, electronic device array, optics, photoelectric device, micro-fluidic device, MEMS, Nano electro-mechanical system, sensing Device, integrated circuit, microprocessor and memory device.
In specific method, at least a portion heterogeneous semiconductor element comprises one or more printable semiconductor devices Part, it is selected from the group of following composition：Diode, transistor, photovoltaic cell, light emitting diode, laser instrument, PN junction, thin film are brilliant Body pipe, HEMT, photodiode, mos field effect transistor, metal semiconductor field Effect transistor, photodetector, logic gate device and Vertical Cavity Surface emitting laser.In one embodiment, for example, At least a portion printable semiconductor device is assembled on substrate by contact print, so that printable semiconductor device It is arranged to make electrical contact with the electrode on substrate by prepatterned.
The method of the present invention can also include the multiple following steps being optionally iteration, i.e. by printable semiconductor unit Part be assembled on substrate or the structure that is arranged on, such as apparatus assembly structure, interlayer structure and/or complanation layer or On encapsulated layer.In one embodiment, for example, the method for the present invention also comprises the steps：By other be can print half Conductor element contact print receiving on set semiconductor element on surface to substrate, or contact print is to being arranged on lining In one or more intermediate structures between semiconductor element and the other printable semiconductor elements received on surface at bottom, In the other printable semiconductor elements of substrate over-assemble, thus producing multilayer device structure.
The multilayer device structure being manufactured by this method can include the multiple device layers being separated by one or more intermediate layers； Wherein device layer includes printable semiconductor elements.In certain embodiments, for example, device layer has less than or equal to 1 micron Thickness, and wherein intermediate layer has the thickness less than or equal to 1.5 microns.In certain embodiments, the method for this respect It is additionally included in the step setting up electrical connection between the printable semiconductor being arranged in different layers.
A kind of ad hoc approach of this respect also comprises the steps：I () is on the receiving surface being printed to described substrate Or at the top of printable semiconductor elements in the one or more structures being provided thereon, intermediate layer is set；(ii) By on the receiving surface by printable semiconductor elements contact print to intermediate layer, assembling other printable semiconductor unit Part.In one embodiment, for example, setting other can print of at least a portion received on surface on the intermediate layer is partly led Volume elements part is positioned, so that they and the printable semiconductor elements spatial alignment received on surface, the electricity being arranged on substrate Contact or not only spatial alignment but also electrical contact.The method of this respect alternatively can also include：I () is patterned into one in the intermediate layer Or multiple opening, thus the one or more printable semiconductor elements received on surface of substrate will be arranged on or be arranged on this Receive the regional exposure of the one or more structures on surface；And (ii) pass through the opening in following intermediate layer, in setting The printable semiconductor elements received on surface on substrate or be arranged on one or more structures on this receiving surface with It is arranged between the semiconductor element received on surface in intermediate layer, set up electrical contact.
The method of the present invention can include multiple optional process steps.The method of the present invention also comprises the steps：? Receive and adhesive phase is provided on surface, wherein printable semiconductor elements are printed on adhesive phase.The method of the present invention is also Comprise the steps：In the one or more structures received on surface or arrange thereon being printed to substrate printable half Encapsulated layer or complanation layer are provided on conductor element.The method of the present invention also comprises the steps：By the receiving surface of substrate or One or more it is printed to the printable semiconductor elements received on surface of substrate or one or more is arranged at this surface On structure, patterned by deposition process using one or more conductor material films.The method of the present invention can be used for multiple Substrate, includes but are not limited to：Flexible substrate；Polymer substrate, plastic, stretchable substrate；Rigid substrate；Semiconductor die Piece and forms substrate.
Present invention additionally comprises the device made by this method and system.The device of the present invention and system include but do not limit In：Electronic device, optics, photoelectric device, micro-fluidic device, MEMS, Nano electro-mechanical system, sensor, integrated Circuit, microprocessor and memory device.
On the other hand, the present invention is the stretchable and flexible device of two dimension.In this respect, described device includes：Have The substrate of contact surface, has assembly to be attached at least a portion of described substrate contact surface, wherein said assembly tool herein There is the region of at least one relief feature region and at least one substantially flat；Wherein said relief feature region have with described The detached part of substrate, and the region of described substantially flat is at least partly integrated to described substrate.On the one hand, described at least One relief feature region has the two-dimensional pattern of the relief feature on substrate, for example, have and contact with substrate contact surface Multiple contact areas wavy pattern.
For ease of assembly is attached to substrate, in assembly or substrate, any one or both receiving surfaces can have work Property region, such as active region pattern." active region " one word is used for the device referring to for combining and/or is used for providing warp Device, such as by one or more binding agent sites pattern on described substrate contact surface or described assembly；Select Underlay pattern or component physical parameters, described parameter be selected from following parameter one or more：Substrate or component thickness, mould Amount, temperature, composition, each parameter has spatial variations；The chemical modification of substrate surface；And with substrate contact surface on The adjacent region of the free edge of assembly.The common use of each of these parameters is, they or assembly and substrate it Between be easy to combine, or provide the mechanism for the controlled warp in space producing assembly.For example, by the region of substantially flat or one Part relief feature region navigates to active substrate regions, and assembly can controllably be tilted, and is used for stretchable assembly to provide.
Any Apparatus and method for disclosed herein, alternatively has selected from the group in the group of following one or more compositions Part：Metal, quasiconductor, insulator, piezoelectric, ferroelectric material, magnetostriction materials, electrostriction material, superconductor, ferrum Magnetic material and thermoelectric material.Any Apparatus and method for disclosed herein, optionally for the group selected from following composition Device, including：Electronic device, optics, photoelectric device, mechanical devices and thermal device.
On the one hand, the stretchable and flexible device of any two dimension includes the region of substantially flat, and it is included for receiving The island of the such as apparatus assembly of interconnection relief feature, described interconnection relief feature is electrically connected with least two islands.
In one embodiment, any one of device touch pad or receiving surface：Flat, substantially flat, there is volt Levy, there is curvature portion, there are wavelike segmentss, or elastomer, such as PDMS substrate or substrate layer.
Brief description
Fig. 1 outlines a kind of method of the stretchable metal interconnection for manufacturing wavy or warp.A is that flow chart is general Will, B illustrates flow chart step.
Fig. 2 is the photo of the electrical interconnection of stretchable wavy/warp, and it is by forming as follows：It is fetched into from rigid substrate Prestrain, stretchable PDMS rubber substrate, then discharges stress, causes warp.
A kind of method that wavy stretchable electrode is manufactured by deposition in wavy texture elastomeric substrate of Fig. 3 general introduction.
Fig. 4 is provided with regard to a kind of details of the method manufacturing and smoothing wavy elastomeric substrate.A is flow chart summary, and B illustrates Flow chart step.
Fig. 5 provides the image smoothing wavy PDMS substrate produced by the method summarized in figures 3-4.Shown interconnection There is 22.6% tensility, and there is the thick metal interconnection of about 900nm（700nm aluminum/200nm gold）, about 38 microns of wavelength, And amplitude（Distance from crest to trough）About 15.6 microns.B illustrates for building and the interconnection of apparatus assembly electrical contact One end.This apparatus assembly can be positioned in the flat of described substrate.
Fig. 6：A illustrates to carry cuspidated commercialization lens arra（From Edmund Optics）.It is solid that B illustrates that spin coating can be taken a picture The epoxy resin changed is to manufacture smooth wavy substrate.The substrate that C illustrates to lean on from B casts PDMS die, is had with producing The wavy elastomeric stamp of smooth features.
Fig. 7：Through shadowmask, the stretchable electrode in smooth wavy elastomeric substrate is deposited to by evaporation.Electrode Keep electric conductivity and connectivity during up to～10% stretching under tension.Scale is about 0.1mm.A is elastomeric substrate On wavy sectional view.B is the microphotograph top view of the electrode being evaporated in wavy elastomeric substrate.Focal plane is located at ripple On the crest that shape rises and falls.C is the microphotograph top view of the electrode being evaporated in wavy elastomeric substrate.Focal plane is located at wavy On the trough rising and falling.
Fig. 8 is the schematic diagram of the process manufacturing stretchable passive matrix light-emitting diode display using stretchable electrode.
Fig. 9 diagram has the mechanical tensility of the passive matrix light-emitting diode display of corrugated electrode.
Figure 10 diagram is distributed in the inorganic photovoltaic diode array on the lens with sphere curved surface.Shown：Various differences Lens shape and angle.
Figure 11 is shown in demand when plane lamina is wrapped in around spherical surface to tensility.
Figure 12 summarizes a kind of scheme for manufacturing stretchable warp semiconductor array, and it can follow the table of spherical bending Face.
Figure 13：The optical microscope image of stretchable warp silicon array, this array have single connection lattice structure (A and B), Multi-link (for example, two connections) lattice structure (C), and flower-shaped attachment structure (D).Stretchable interconnection can be in such as touch pad Photodiode, light collection/light detecting device, and other apparatus assemblies is electrically connected at region.These systems can be suitable for Curved surface.Structure shown in Figure 13 A-D is located on PDMS substrate.
Figure 14：The electron microscope image of the stretchable warp silicon array in lattice structure, this array being capable of supporting device Assembly is simultaneously suitable for curved surface.Scale is 200 μm in A, 50 μm in B.
Figure 15：The electron microscope image of the stretchable warp silicon array in lattice structure, this array has by multiple（Example As：2）Interconnect the adjacent touch pad that is connected with each other, and being capable of supporting device assembly be suitable for curved surface.Scale is in A 200 μm, 50 μm in B.
Figure 16：It is in the electron microscope image of the stretchable warp silicon array of flower-like structure, this array being capable of eyelid retractor Part assembly is simultaneously suitable for curved surface.Scale is 200 μm in A, 50 μm in B.
Figure 17：The electron microscope image of the stretchable warp silicon array of bridge shape structure, this array being capable of supporting device group Part is simultaneously suitable for curved surface.Scale is 200 μm in A, 50 μm in B.
Figure 18：The photo of the photodiode in the lattice structure on the stretchable warp silicon array on PDMS.
Figure 19 illustrates the stretchable reversible behavior being interconnected in stretching and lax period.This system is lax in picture 1.This is System is stretched as shown in the stretching arrow in picture 2,3 and 4.In picture 4, maximum tension is about 10%, and just along stretching For the interconnection of force direction alignment, define the interconnection of substantially flat.This system is lax in picture 5-8, and picture 8 have with The geometry of the equivalence shown in picture 1 and structure.Scale is 0.2mm.
Figure 20：" bubble die " or " balloon die " device, its can bringing into conformal contact to curved substrate and planar substrate.
Figure 21：Another kind can be suitable for the device of spherical curvature surface and flat surfaces, is a kind of stretchable spherical The die of molding.This die leans on curved surface（It is concavees lens in this embodiment）Casting, and be removed.This die is drawn Stretch so that its surface flattens substantially, and interconnection can be transferred to this surface.
Figure 22：The stretchable warp silicon array during stretching circulation on " bubble " or " balloon " die.Here is implemented In example, the interconnection between adjacent touch pad includes two wavy interlink（Si thickness 290nm）.This extension test uses bubble swollen Swollen, to provide multidirectional stretching.Rightmost picture is in maximum tension, and the two of lower section pictures illustrate, work as tensile force When being removed, the lax structure returning to before they stretch of interconnection, as shown in the picture of upper left.
Figure 23：It is printed onto the silicon being coated with the glass lens of binding agent (PDMS or SU-8) by balloon die.
Figure 24 summarises the process step for constructing the 3D warp shape in semiconductor nano-strip.
A:Manufacture UVO mask, and on PDMS substrate, surface chemistries are patterned using this mask.B： Form warp GaAs band, then embed them in PDMS.C：The response to stretching and compression for the warp GaAs band.D：Using a and b In process formed sample SEM image.Prestrain for forming this sample is 60%, wherein Wact=10 μm and Win= 400μm.
Figure 25：The side-looking map contour of the warp being formed on PDMS substrate using 33.7% prestrain, wherein (A) Wact= 10 μm and Win=190μm;(B)Wact=100 μm and Win=100μm.Because depart from band from PDMS, two samples are all presented in non- Warp in active region.In WactIn the case of=100 μm, the sine wave with little crest is only formed in active region. Comparison to this two samples, shows to select the W less than marginal valueactAvoid and form little wavy texture.
Figure 26：After microscopic section, the side elevation image of embedded warp GaAs band in PDMS.This image shows, PDMS is completely filled with the gap between band and lower substrate.Warp in the case is by 60% prestrain and Wact=10μm And Win=300 μm of formation.It is cast in the PDMS prepolymer on the surface of these warp bands, solidify 4 hours at 65 °C in stove.
Figure 27：The light micrograph of the side outline of (A and D) warp GaAs and (B, C) silicon ribbon.A：It is formed on PDMS GaAs band structure be patterned, wherein Wact=10 μm and Win=190 μm, different prestrains is：11.3%、25.5%、 33.7% and 56.0% (from top to bottom).εpre=33.7% and 56.0% dotted line is the interconnection geometry of mathematical prediction.B：? The Si band structure being formed on PDMS substrate, wherein prestrain are 50%, and with Wact=15 μm and Win:350、300、250、250、 300 and 350 μm of (from left to right) patternings.This image by shooting sample inclination in 45° angle.C：It is formed at PDMS substrate On Si band structure, prestrain 50%, and the binding agent site of 30 ° of angular orientations is become with the length direction with respect to band（Wact=15 μm and Win=250μm）Parallel lines patterned.This image passes through to shoot sample inclination at 75 °.D：It is formed at PDMS lining GaAs band structure on bottom, prestrain 60%, wherein Wact=10 μm and different WinFor：100th, 200,300 and 400 μm（From Upper and under）.
Figure 28：Stretching and the warp GaAs band being embedded in PDMS of compression.A：Being stretched to different degrees of stretching should Become（Positive %）Single warp band image.Rupture near 50%.B：It is compressed to different degrees of compression strain（Negative %） Single warp band image.Be more than in compression strain～-15% when, one section short and small wavy several occurs at the crest of warp What shape.C：It is compressed to the image of the single warp band of different degrees of compression strain.Warp in such cases is pre- with 60% Plus should be deformed into, wherein Wact=10 μm and Win=400 μm (A, B), and Wact=10 μm and Win=300μm(C).In each picture In red line and arrow be shown in same position on same band, to project mechanically deform.Illustration is provided with white box labelling Part enlarged drawing, be shown clearly under high pressure shrinkage strain the formation of fracture.Number corresponding to stretching or compression degree Word is to be calculated according to following equation：
Figure 29：There is the photo with the sample of array for two-layer warp GaAs.This structure is with successively design manufacture.First Layer GaAs band（The warp geometry being limited, wherein 60% prestrain, Wact=10 μm and Win=400μm）It is embedded into PDMS In.Second layer warp band is formed on the surface of this substrate, using prestrain 50%, wherein Wact=10 μm and Win=300μm.
Figure 30：Bending from the teeth outwards and in PDMS substrate for the warp band.A-C, the warp GaAs band on PDMS There is (A) recessed surfaces, (B) flat surfaces, and the low amplification of (C) convex surfaces（The picture left above）, high amplification （Right figure）, and schematic representation（Lower-left figure）Light micrograph.Scale in c is applied to a and b.D, is embedded in Warp band in PDMS is before bending（Left）Upon bending（Right）Image.Upper figure and figure below are shown respectively upper surface and following table The curvature in face.Scale in the image on the right side is also applied for the image on the left side.Warp band is formed with 60% prestrain, its Middle Wact=10 μm and Win=400μm.
Figure 31：Characteristic description to stretchable MSM-PD with low (MSM-PD).A：Geometry Schematic representation（Figure top）, equivalent circuit（In figure portion）, and the optical imagery of warp PD before and during stretching （Figure bottom）.B:Electric current (I)-voltage (V) characteristic curve, record is had the warp that the IR lamp of different output intensities is illuminated certainly PD.(C) it is stretched or (D) is compressed to different degrees of and with the PD of constant light intensity irradiation electric current (I)-voltage (V) characteristic Curve.
Figure 32：Semi-spherical elastomer transfer " die " " can float off from conventional wafer（liftoff）" the Si CMOS that interconnects Then their geometry is transformed into hemispherical by " microchip "." projection " interconnection between microchip, have adjusted To plane-related strain of curved surface deformation.
Figure 33：The CMOS microchip of interconnection is transferred to, from hemispherical die, the hemispherical device substrate matching.Can shine CMOS is attached to device substrate by the adhesive phase of solidifying, also makes this surface plane.
Figure 34：There is the printer device of the fixing equipment compatible with hemispherical die, actuator and visual system.
Figure 35：By " projection " the compressible array with interconnecting electrically connected monocrystalline silicon island on hemispherical die.
Figure 36：By " ink-jet " to radius of curvature be～surface of hemispherical die of 2cm on interconnection monocrystalline silicon island Optical imagery.
Figure 37：With regard to can be used for the stress/strain curves of the various difference silicone elastomers of hemispherical die.For little For 20% strain, linear, perfectly elastic response is important.
Figure 38：In the hemispherical die with initial uniform thickness 0.57mm, the finite element of the deformation of sphere to plane Modeling.
Figure 39：For the indicative icon of the step of two-dimentional " wavy " semiconductor nano film is manufactured on elastomeric support.
Figure 40 (a-f)：The optics of each different phase during the formation of silicon nanometer film for the 2D wavy texture in silicon nanometer film Microphotograph.Illustration illustrates two-dimentional energy spectrum.G () is in low enlargement ratio, the completely image of the structure of development.For this example, The thickness of silicon is 100nm, and its lateral dimensions is about 4 × 4mm2, substrate is PDMS, and heat induction prestrain is 3.8%.(h) Corresponding to the figure of the short wavelength of figure (a-f), and (i) is the column of the long wavelength that the various differences from figure (g) estimate Figure.
Figure 41：2D wavy Si nanometer film (a) afm image on PDMS and (b-d) SEM image（60 ° of (inclination angle)).Silicon Thickness be 100nm, and hot prestrain is 3.8%.These images project the property of wavy pattern high degree of periodicity：In Si and Good combination between PDMS, such as visible closely connecing at the PDMS near the edge of Si and the hole in being etched in Si Tactile proved；And the shortage of the dependency between wavy texture and the position of this some holes.
Figure 42：A 2D wavy Si nanometer film that () has different-thickness (55,100,260 and 320nm) on PDMS is pre- with heat Plus the light micrograph of strain 3.8% formation, and (b) short wavelength and amplitude are with respect to the dependency of Si thickness.
Figure 43：The optics of the 2D wavy Si nanometer film under a different uniaxial strains that () applies on three different orientations Microphotograph.These samples are made up of the thick Si film of the 100nm on PDMS, are formed with 3.8% hot prestrain.These images In following state collection：Relaxed state before stretching（Top is respectively schemed）, relaxed state after stretching（Bottom is respectively schemed）, and be in The elongation strain 1.8% uniaxially applying（In upper each figure）With 3.8%（In under each figure）.B () short wavelength is with respect in three differences The dependency of the strain applying on direction.
Figure 44：The afm image of the zones of different of 2D wavy silicon nanometer film, the 1D being shown in film edge near zone is wavy several What property（Upper figure）, it is slightly off the region of this marginal area（Middle figure）, and the region close to this film central authorities（Figure below）.This sample Product are made up of the thick Si film of 100nm on PDMS, are formed with 3.8% hot prestrain.
Figure 45：2D wavy Si nanometer film its there is 1000 μm of length and there is width 100,200,500 and 1000 μ The light micrograph of m.These films are respectively provided with 100nm thickness, and are formed with hot prestrain (a) 2.3% and (b) 4.8% On same PDMS substrate.C () edge effect length is with respect to the dependency of the prestrain of similar film.
Figure 46：There is the light micrograph of 2D of different shapes wavy silicon nanometer film:A () is circular, (b) is oval, (c) Hexagon, and (d) triangle.These films are respectively provided with 100nm thickness, and are formed on PDMS, and hot prestrain is 4.8%.
Figure 47：The light micrograph of the wavy texture of Si nanometer film, its shape be designed to using edge effect with 2D tensility is provided in the interconnection array on flat island.In two kinds of situations described herein, Si is that 100nm is thick, and square is 100 × 100 μm, and carry connection to be 30 × 150 μm of lines.Prestrain is (a, e) 2.3% and (c, g) 15%.(a, c, e, g) is shown Band and foursquare selected areas SEM image（75 ° of inclination angle）Exist respectively（b、d、f、h）Shown in.The SEM of magnification at high multiple The illustration of image is shown in the raised areas of the ripple in b and d.
Figure 48 is 2D wavy Si nanometer film（100nm is thick, 4 × 5mm2And 3.8% hot prestrain）Sample exist PDMS substrate ripple (upper figure), and the 1D ripple at (i) edge, the fishbone ripple of (ii) interior zone, and (iii) is in the unordered fish at center The photo of bone ripple.Scale is 50 μm.
Figure 49：The schematic diagram of the characteristic wavelength in fishbone wave structure.
Figure 50：Si strains, and changes with the change of the hot prestrain being applied at fishbone ripple and 1D ripple.Si should Become and pass through εSi=(L- λ)/λ experiment records, and wherein L and λ is surface and horizontal range in AFM surface profile.
Figure 51：In extension test（About εst=4.0%）The optical microscope image of the fishbone ripple after circulation.Test sample It is prepared as the thick silicon fiml of 100nm, and 3.8% biaxially hot prestrain.After the extension tests of up to 15 times circulate, Fishbone ripple is resumed and has and initial very close structure, simply has the defect of some fractures from film.
Figure 52：Apply the schematic diagram of " expansion " of fishbone ripple of uniaxial tension strain.Elongation strain εstPoisson effect Cause compression strain εcp.
Figure 53：During the heating tested as biaxial stretching and temperature-fall period, the optics of the metamorphosis of fishbone ripple Micro-image.Test sample with the thick silicon fiml and 2.9% of 100nm biaxially hot prestrain and prepare.
A kind of method that wavy stretchable electrode is manufactured by following process of Figure 54 general introduction, i.e. in structural wavy mother matrix Upper deposition, subsequently cast impression on this mother matrix, solidifies this die, and thus in release, electrode is transferred to this mother matrix.
Figure 55 provides the stretchable metal on the wavy PDMS being combined prepared by the method in Figure 54 by the method in Fig. 4 The image of electrode (gold, 300nm is thick).Figure below is, the measured resistance data of stretchable corrugated metal electrode is with being applied Elongation strain（Up to 30%）And the chart changing.
Figure 56 is an embodiment for the application manufacturing flexible extensible iLED strip light for this method.A is to illustrate this The microphotograph that device can bend on a large scale, and in this embodiment, crooked radian is 0.85cm.B is provided in wavy PDMS The sectional view of the stretchable metal on substrate（Upper figure, 40 μm of scale）And top view（Figure below, scale 3mm）.In physics In the case that characteristic is not significantly degenerated, this metal can stretch about 30%.C be local train on PDMS just String corrugated metal interconnects（It is shown in B）Wavelength（Square, left axle）And amplitude（Circle, right axle）Effect curve.With should Become and increase, wavelength correspondingly increases, and the amplitude of this metal correspondingly reduces.
Figure 57：Manufacture the schematic diagram of the method for heterogeneous three-dimensional electronic device based on printed semiconductor nano material.This mistake Journey is related to the groups of nanotube being respectively formed at source substrate, nano wire, nano belt or other active nano materials, weight It is transferred to again in common device substrate, to produce the electronic device with ultra-thin, multiple-level stack geometry interconnection.
Figure 58（A）Printing silicon nano belt is used for the monocrystal silicon MOS memory of quasiconductor（MOSFET） The light micrograph of 3-dimensional multi-layered stacked array.The bottom of this image（It is designated as " first "）, middle part（It is designated as " second "）And top Portion（It is designated as " the 3rd "）Part, corresponds respectively to the region with a layer, two layers and three layer devices.(B) schematic cross-sectional (on) With tilt (under) view, S, D and G respectively finger source electrode, drain and gate（All illustrated with gold）, light blue and navy blue region pair Should be in silicon ribbon doping and unadulterated region；Purple layer is SiO2Gate-dielectric.(C) by being similar to shown in (A) and (B) Device substrate on confocal microscope collect 3-D view (left figure：Top view；Right figure：Angled view).Each layer all by Color is to watch（Golden：Top layer；Red：Middle level；Blue：Bottom；Lycoperdon polymorphum Vitt：Silicon）.(D) Si MOSFET in each layer Current-voltage characteristic curve, shows excellent performance（Mobility 470 ± 30cm2/Vs）And the good homogeneity of characteristic.Ditch Road length and width is 19 and 200 μm respectively.
Figure 59：(A) the heterogeneous integrated-optic device of the three-dimensional of three level stack includes GaN nano belt HEMT, Si nano belt The light micrograph of MOSFET and SWNT network TFT.(B) 3-D view collected by confocal microscope.These layers It is colored to check（Golden：Top layer, Si MOSFET；Red：Middle level, SWNT TFT；Blue：Bottom）.(C) on ground floor GaN device electrical characteristics curve（Channel length, channel width and grid width are respectively 20,170 and 5 μm）, on the second layer SWNT device（Channel length and width are respectively 50 and 200 μm）, and the Si device in third layer（Channel length and width It is respectively 19 and 200 μm）.(D) device in every layer（Black bars：Si MOSFET；Red circle：SWNT TFT；Green three Angle：GaN HEMT）Normalization mutual conductance (gm/g0m), change with the change of the crooked radian of plastic（Left figure）.Bending System and the image of detection device（Right figure）.
Figure 60：(A) image of the printed array of 3D silicon NMOS phase inverter on a polyimide substrate.Phase inverter is by being located at On two different layers, the MOSFET that is electrically interconnected by structure（4 μm of channel length, load-driver width ratio 6.7, driver width 200 μm of degree）Composition.The enlarged drawing in the region that top right plot offer is marked by red boxes in left figure.Bottom right illustrates typically The transmission characteristic curve of phase inverter.(B) use p-channel SWNT TFT（Channel length and width are respectively 30 and 200 μm）And n The transmission characteristic curve of the printing complementary inverter of raceway groove Si MOSFET (channel length and width are respectively 75 and 50 μm).Insert Figure provides phase inverter (left) and the light micrograph of circuit diagram (right).(C) (channel length and width divide GaAs MSM Wei 10 and 100 μm) it is integrated with Si MOSFET（Channel length and width are respectively 9 and 200 μm）With 850nm Current-voltage response under from dark to the different illuminances of 11 μ W for the IR wavelengths source.Illustration illustrate optical imagery with And circuit diagram.
Figure 61：The image in the automatic stage of transfer, it is able to record that～1 μm within.
Figure 62：(A) optics of the heterogeneous integrated array of the three-dimensional of Si MOSFET and GaN HEMT shows on a polyimide substrate Micro- photo.Right illustration illustrates schematic cross-section.Electrode (golden), SiO2（PEO;Purple）、Si（Light blue：Undoped p；Dark blue：Mix Miscellaneous）, GaN (dark green：Ohmic contact；Light green：Raceway groove), polyimides（PI；Brown）And polyurethane (PU；Dark brown) all shown Go out.(B) typical Si MOSFET（Channel length and width are respectively 19 μm and 200 μm）And GaN HEMT（Channel length, ditch Road width and grid width, respectively 20 μm, 170 μm and 5 μm）Current-voltage characteristic curve.Si and GaN in left figure Data, respectively with Vdd=0.1V and Vdd=2V measures.
Figure 63：(A) optics of the heterogeneous integrated array of three-dimensional of Si MOSFET on a polyimide substrate and SWNT TFT Microphotograph.Right illustration illustrates schematic cross-section.Electrode (golden), epoxy resin（Cyan）、SiO2（PEO;Purple）、Si（Shallow Blue：Undoped p；Dark blue：Doping）、SWNT（Lycoperdon polymorphum Vitt）, polyimides（PI；Brown）And polyimides (dark brown) all quilts of solidification Illustrate.(B) typical SWNT TFT（Channel length and width are respectively 75 μm and 200 μm）And typical case Si MOSFET（Grid is long Degree and channel width are respectively 19 μm and 200 μm）Current-voltage characteristic curve.SWNT and Si in left figure is respectively in Vdd =-0.5V and Vdd=0.1V measures.
Figure 64:(A) the heterogeneous integrated battle array of the three-dimensional of Si MOSFET on a polyimide substrate, SWNT TFT and GaNHEMT The schematic cross-section of row.(B) several Si MOSFET（Channel width=200 μm, black line：Channel length=9 μm, red line：14 μm, green Line：19 μm, blue line：24μm）Transmission characteristic curve, effective mobility and on/off ratio, (C) SWNT TFT（Channel width=200 μm, black line：Channel length=25 μm, red line：50 μm, green line：75 μm, blue line：100μm）And (D) GaN HEMT (raceway groove is long Degree, channel width and grid width, respectively 20 μm, 170 μm and 5 μm) transmission characteristic curve, mutual conductance and on-off ratio.
Figure 65:(A) it is implemented in the schematic structure in the section of SWNT-Si CMOS inverter in silicon wafer substrate.(B) Form the transmission of n-channel Si MOSFET and p-channel SWNT TFT and the I-V characteristic curve of CMOS inverter.(C) calculate is anti- The transmission characteristic curve of phase device, and the I-V characteristic curve of Si and SWNT transistor.
Figure 66：(A) the GaAs MSM-Si MOSFET building on a polyimide substrate is infrared（IR）Detector transversal Face schematic construction and circuit diagram.(B) I-E characteristic of GaAs MSN infrared detector (L=10 μm, W=100 μm) Curve, and there is the Si MOSFET of 3V power supply（L=9μm,W=200μm）Transmission and I-V characteristic curve.(C) calculated The IV characteristic curve of GaAs MSM, and the I-V response of the GaAs MSM integrated with the SiMOSFET with 3V power supply.
Figure 67 diagrammatically illustrates a kind of optics（Waveguide array）, it passes through to being partly adhered to deformable substrate Optical microstructures carry out controlled warp and manufacture.
Figure 68 schematically shows mechanical devices（For example：Accelerometer/pressure transducer）, it passes through to be partly adhered to can The electric conductivity micro structure of deformed substrate carries out controlled warp and manufactures.
Figure 69 schematically shows thermal device（Micro-bolometer）, it passes through to being partly adhered to the exhausted of deformable substrate Hot microstructure carries out controlled warp and manufactures.
Specific embodiment
" stretchable " refers to material, structure, device or apparatus assembly is strained but the ability that do not rupture.Exemplary In embodiment, stretchable material, structure, device or apparatus assembly can stand strain more than about 0.5% and continuous Split it is preferable that for some applications, the strain more than about 1% can be stood and does not rupture, and answer more preferably, for some With the strain more than about 3% can be stood and do not rupture.
Term " assembly " is used for referring to the material using in the devices or single assembly." interconnection " is of assembly Example, refers to set up electrical connection or the conductive material setting up electrical connection between the components with assembly.Specifically, interconnect Electrical contact can be set up between assembly that is discrete and/or being moved relative to each other.According to desired device specification, operation And application, interconnect and be made up of suitable material.For the application requiring high conductivity, it is possible to use typically interconnect metal, including But be not limited only to copper, silver, gold, aluminum and the like, and alloy.Suitable conductive material can include quasiconductor, such as silicon, oxygen Change stannum indium or GaAs.
" quasiconductor " refer under extremely low temperature be insulator but under about 300 kelvin degrees, there is appreciable electricity Any materials of conductance.In this manual, the use of term " quasiconductor " is intended to lead with microelectronic component and electronic device Domain is consistent to the use of this term.Quasiconductor used in the present invention can include：Elemental semiconductor, such as silicon, germanium And diamond；And compound semiconductor, such as IV compound semiconductor, such as SiC and SiGe, Group III-V semiconductor, all As AlSb, AlAs, AlN, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN and InP, iii-v ternary compound Semiconducting alloy, such as AlxGa1–xAs, II-VI group quasiconductor, such as CsSe, CdS, CdTe, ZnO, ZnSe, ZnS and ZnTe, I-VII race quasiconductor, such as CuCl, group IV-VI quasiconductor, such as PbS, PbTe and SnS, layer quasiconductor, such as PbI2、MoS2 And GaSe, oxide semiconductor, such as CuO and Cu2O.Term " quasiconductor " includes intrinsic semiconductor and doped with a kind of or many Plant the extrinsic semiconductor of selected material, extrinsic semiconductor includes the quasiconductor with p-type dopant material and has N-shaped dopant material Quasiconductor, to provide to given application or the beneficial characteristic electron of device.Term " quasiconductor " includes containing quasiconductor and/or mixes The synthetic material of the mixture of debris.The useful specific semi-conducting material of some applications of the present invention is included but not only limits In, Si, Ge, SiC, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, GaSb, InP, InAs, InSb, ZnO, ZnSe、ZnTe、CdS、CdSe、ZnSe、ZnTe、CdS、CdSe、CdTe、HgS、PbS、PbSe、PbTe、AlGaAs、AlInAs、 AlInP, GaAsP, GaInAs, GaInP, AlGaAsSb, AlGaInP and GaInAsP.Porous silicon semiconductor material can be used for this Bright application in sensor and field of light emitting materials, such as light emitting diode（LED）And solid-state laser.Semi-conducting material miscellaneous Matter is atom in addition to semi-conducting material itself, element, ion and/or molecule or being supplied to any of semi-conducting material mixes Debris.The impurity that those may adversely affect to the electrical attributes of semi-conducting material is undesirable appearance in semi-conducting material Material, including but not limited to oxygen, carbon and metal including heavy metal.Beavy metal impurity includes but is not limited to, element week Family of elements between copper and lead, calcium, sodium and their all ions, compound and/or complex on phase table.
" semiconductor element " and " semiconductor structure " synonymously uses in this manual, and refers to any quasiconductor material Material, composition or structure, and clearly include monocrystalline and poly semiconductor, the quasiconductor manufacturing by high-temperature process of high-quality Material, doped semiconductor materials, organic and inorganic semiconductor and composite semiconductor material, and have one or more extra Semiconductor subassembly and/or non-semiconductor components structure, such as dielectric layer or dielectric material and/or conductive layer or conductive material.
The interconnection of " stretchable " used herein is that this interconnection can be in one or more sides for referring to following interconnection Stand various power and the strain such as stretching, bend and/or compressing etc upwards, but not to apparatus assembly electrical connection or Conductivity from apparatus assembly adversely affects.Thus, stretchable interconnection can be by the relative brittleness of such as GaAs etc Material formed, even and if receiving significant deformation force（As stretching, bending, compression）, but the geometry knot due to this interconnection Structure, and remain able to continue function.In exemplary embodiment, stretchable interconnection can stand more than about 1%, 10% or about 30% strain and do not rupture.In one embodiment, this strain is produced by the elastomeric substrate of stretching lower section Raw, a part for this interconnection of wherein at least is incorporated into this substrate.
" apparatus assembly " is used for referring in electricity, optics, the mechanically or thermally independent assembly in power device.Assembly can be light Electric diode, LED, TFT, electrode, quasiconductor, other light collection/detection components, transistor, integrated circuit, device can be accepted One or more of the touch pad of assembly, thin-film device, component, control element, microprocessor, transducer and combinations thereof. Apparatus assembly may be connected to one or more touch pads well known in the art, for example, such as evaporation of metal, wire bonding, solid Body or the application of conducting resinl.Electrical part, is often referred to be combined with the device of multiple apparatus assemblies, and inclusion Large area electronics, Printing board, integrated circuit, apparatus assembly array, biological and/or chemical sensor, physics（For example, temperature, light, radiation etc.） Sensor, solaode or photovoltaic array, display array, condenser, system and display.
" substrate " refers to there is the material that can support including apparatus assembly or the surface being interconnected in interior assembly." in conjunction with " To the interconnection of described substrate, refer to this interconnection with this substrate physical contact and the substrate surface that is attached to respect to it not The part that can significantly move.In contrast, uncombined part, then significantly can move with respect to this substrate.Interconnection is not Bound fraction generally corresponds to the part with " warp architecture ", for example, formed by introducing the interconnection bending straining.
It is in the assembly of " bringing into conformal contact " with substrate, refer to cover substrate and keep three-dimensional relief feature part to make it The assembly that pattern is determined by the pattern of the relief feature part on substrate.
In the linguistic context of this specification, " warp architecture " refers to the structure due to being applied in power with curved configuration.? Warp architecture in the present invention can have one or more fold domains, elevated regions, recessed region and its combination in any.? Available warp architecture in the present invention, for example could be arranged to spiral structure, crease structure, warp construction and/or wavy ( That is, corrugated) structure.
Warp architecture, such as stretchable bending interconnection, can tie among the construction under strain in this warp architecture Close flexible substrate, such as polymer substrate and/or elastomeric substrate.In certain embodiments, warp architecture, for example, bend Banded structure, in the embodiment being preferred for some applications, is in：Strain less than or equal to about 30%, less than or wait In about 10% strain, the strain less than or equal to about 5% and the strain less than or equal to about 1%.In some embodiment party In case, this warp architecture, for example bend banded structure, be in：Selected from the strain of about 0.5% to about 30% scope, selected from big The strain of about 0.5% to about 10% scope, the strain selected from about 0.5% to about 5% scope.Alternatively, stretchable bending Interconnection can be coupled to the substrate as apparatus assembly and includes the substrate of itself and non-flexible substrate.Substrate itself can be flat Smooth, substantially flat, curved surface, band sharp edges, or more combination in any.Stretchable bending interconnection can be used for being transferred to any one Plant or multiple such complicated substrate surface topology.
" thermo-contact " refer to bi-material can by big calorimetric such as by conduction be delivered to low temperature material from high-temperature material The ability of material.Occupy the warp architecture on substrate, be particularly useful for providing be in this substrate thermally contact region (for example, in conjunction with Region) and it is not at, with this substrate, other regions of thermally contacting（For example, and this substrate is heat-insulated and/or the area of physical separation Domain）.
As long as geometry or shape are easy to interconnection bending or stretching and do not rupture, interconnection just can have any number of Geometry or shape.Common interconnection geometries can be described as " warp " or " wavy ".On the one hand, can pass through power It is applied in the deformable substrate of lower section, and power (for example, strain) is applied to mutually connects, so that the size of lower substrate Change produces warp or wavy in interconnection, thus obtaining this geometry, because some parts of this interconnection are incorporated into this Substrate, but the region between these constraint parts is not combined.Thus, single interconnection can by the end being incorporated into substrate and The middle body being not bonded to the bending of substrate between these ends is limited." bending " or " warp " refers to relative complex Shape, is such as formed by having the interconnection of one or more extra calmodulin binding domain CaMs in middle body." arc " refers to Essentially there is the sinusoidal shape of amplitude, wherein this amplitude corresponds to the maximum separation between this interconnection and substrate surface Distance.
Interconnection can have any cross sectional shape.The interconnection of one of which shape is banding interconnection." banding " refers to have Thickness and the generally rectangular section of width.Specific dimensions depend on：Composition by the expectation electric conductivity of this interconnection, this interconnection And the quantity of the interconnection of electrical connection adjacent devices assembly.For example, the interconnection in the bridge shape structure connecting adjacent component, in chi The single interconnection connecting adjacent component is can be differently configured from very little.Thus, as long as producing the electrical conductivity being suitable for, these sizes are just permissible It is any suitable value, and 1cm between and thickness is between about 50nm to 1 between about 10 μm for such as width, or wide The scope of the ratio of degree and thickness is between about 0.001 to 0.1, or this ratio is of about 0.01.
" elastomer " refers to be stretched or deform and returns its original shapes at least in part and occur without substance The polymeric material of ground permanent deformation.Elastomeric substrate generally stands extensive elastic deformation.Currently available example resilient Body substrate includes but are not limited to, elastomer and synthetic material, or has resilient elastomer, polymer and copolymer Mixture.In certain methods, by provide a kind of for elastomeric substrate expanded along one or more main shafts Mechanism, to elastomeric substrate prestrain.For example, it is possible to by expanding this elastomeric substrate along first axle, including radially The expansion in direction, to provide prestrain, and semispherical surface is transformed into flat surfaces.Alternatively, elastomeric substrate is permissible Expand along multiple axles, for example, pass through to expand along the first axle of orthogonal relative to each other positioning and the second axle.By providing elasticity The mechanism of body substrate expansion carrys out the mode to elastomeric substrate prestrain, including being curved to elastomeric substrate, rolling, scratches Song, flattening, expansion or other deformation.The mode of prestrain can also include the temperature by lifting elastomeric substrate, thus Thermal expansion is carried out to elastomeric substrate, prestrain to be provided.The elastomer that can be used for the present invention may include but be not limited to, thermoplastic Property elastomer, styrene materials, olefin material, polyolefin, polyurethane thermoplastic elastomer (TPE), polyamide, synthetic rubber, PDMS, polybutadiene, polyisobutylene, poly-（S-B-S）, polyurethane, polychloroprene and silicones.
From L (resting state), L+ Δ L (under applying power) is changed to for length, wherein Δ L is to calculate from resting state The shift length rising, strain is defined as：ε=ΔL/L.Axial strain refers to be applied to an axle of this substrate to produce displacement The power of Δ L.Strain is also produced by the power that applies in the other direction, the appointing of such as bending force, compression stress, shearing and above-mentioned power Meaning combination.Strain or compression also can be produced by curved surface is drawn into plane, or vice versa as the same." degree of strain " refers to It is the amplitude of strain, its excursion can be from negative (corresponding to compression) to zero (relaxed state) to just (corresponding to extending or stretching) Change.
" Young's moduluss " are a kind of mechanical properties of material, device or layer, refer to for given material, stress and strain Ratio.Young's moduluss can be provided by following equation；
Wherein E is Young's moduluss, L0It is equilibrium length, Δ L is the length change under applying stress, and F is to be applied Power, and A is the area that this power is applied to thereon.Young's moduluss can also be expressed by equation below according to Lame constants：
Wherein λ and μ is Lame constants.High Young's modulus (or " high-moduluss ") and low Young's moduluss (" or low modulus ") be Relative descriptors to the amplitude of Young's moduluss in given material, layer or device.In the present invention, high Young's modulus are more than low poplar Family name's modulus, applies preferably about big 10 times for some, applies more preferably about big 100 times for other, for again Some still more preferably about big 1000 times of applications.There is by polymerization the elastomer of spatial variations Young's moduluss, and/or pass through Elastomer is carried out leafing to have multiple layers of different elasticity in various diverse locations, to obtain complex surface shape.
" compression " used herein uses in the way of similar to " strain ", but refers in particular to the characteristic length for reducing substrate Or volume is so that Δ L<0 power.
The physics that " fracture " or " rupture " refers in interconnection fractures, so that this interconnection can not realize substantive electricity Conducting.
" binding site pattern " refers to, and combination space application in support substrate surface and/or is applied to interconnect, so that The interconnection that be supported have the region being combined with substrate and with substrate uncombined region.For example, it is interconnected in its end to be tied Close this substrate, but then do not combine in middle body.Further shape can be carried out control, process is, in middle body There is provided extra binding site, so that uncombined region is divided into two discrete middle bodies.Combination can include Binding agent, adhesive precursor, welding, photoetching and the polymer of solidification of can taking a picture.Generally, binding site can be by multiple skills Art patterns, and can be according to described below, i.e. can in substrate and characteristic (for example：Interconnection) between provide and glue by force Surface activity (the W making a concerted effortact) region, and the nonactive (W in surface that bonding force is relatively weakin) region.By viscosity pattern The substrate becoming wire can be according to WactAnd WinSize describing.These variables and amplitude ε of prestrainpreImpact interconnection Geometry.
" space variable " refers to following parameter, and it has the amplitude changing from the teeth outwards, and be particularly useful for provide assembly is risen The Two dimensional control of volt characteristic, thus provide the spatial control for device or the flexible of apparatus assembly.
" carbon nanomaterial " refers to such as next class formation, and it includes carbon atom, and has between 1 nanometer and 1 micron At least one size.In one embodiment, at least one size of carbon nanomaterial is between 2nm and 1000nm.Carbon Nano material includes the allotrope of carbon, such as SWCN（SWNT）, multi-walled carbon nano-tubes（MWNT）, nanometer rods, Single wall and/or multiwall fullerene, graphite, Graphene, carbon fiber, C film, carbon whisker and diamond, and above-mentioned every spreading out Biological.
" spatial alignment " refers to the position limiting relative to each other and/or the orientation of two or more structures.Spatial alignment Structure can have the position preselecting relative to each other and/or orientation, for example, elects as in advance within 1 micron, excellent for some applications It is selected within 500 nanometers, and for some applications more preferably within 50 nanometers.
" heterogeneous semiconductor element " is multicomponent structures, and it includes combining partly leading of one or more other materials or structure Body.Other materials in the linguistic context of this specification and structure may include Bu Tong in the inner to the quasiconductor that they are combined Element, molecule and synthetic, polymer and its particle, for example have different chemical composition and/or physical state (for example, crystallization, Hypocrystalline or amorphous state) material and/or structure.The present invention in this respect in useful heterogeneous semiconductor element include and other The inorganic semiconductor structure of semiconductor material combinations, other semi-conducting materials include doped semiconductor（For example, N-type and p-type are mixed Miscellaneous）With carbon nanomaterial or its thin film, dielectric material and/or structure and conductive material and/or structure.The present invention's is heterogeneous Semiconductor element includes the structure with space uniform distribution, such as Uniform Doped semiconductor structure, and includes thering is space inequality The structure of even distribution, such as has concentration and changes with one-dimensional, two-dimentional or three dimensions（I.e. in semiconductor element, doping object space divides Cloth is uneven）Alloy semiconductor structure.
By following non-limiting examples it will be further appreciated that the present invention.All references cited herein all with The mode of quoting is included herein, and not inconsistent with disclosure herein.Although description provided herein school bag contains many special Belong to description, but these be understood not to limit the scope of the present invention, and should be understood to be provided solely for the present invention some The illustration of current preferred embodiment.Therefore, the scope of the present invention should be determined by appended claims and its application of equal value, And not determined by the embodiment given.
Fig. 1 outlines a kind of method for manufacturing warp or wavy interconnection in general manner.Gold is set on a substrate 20 Belong to characteristic 10 (as using as the metallicity part interconnecting).For reducing viscosity, contacting metal characteristic and/or substrate Surface is alternatively processed, for example, pass through photoetching or use shadowmask.Between characteristic 10 and substrate 20, for example, pass through Micromachined, etching and/or mechanical scribing, introduce space (crack) 25.Metallicity part 10 adopts the elasticity of compliance Body die 30 obtains.The subsequent deformation of die 30 produces wavy or warp geometry in metallicity part 10.Warp Produce and carried by being under strain and subsequently discharging the die 30 of applied tension force when obtaining metallicity part 10 For, or provided by compression die 30 after obtaining metallicity part.
Warp produced by the method summarized by Fig. 1 or an enforcement of corrugated metal characteristic is shown in Fig. 2 Example.Fig. 2 is the photo of the electrical interconnection 40 of stretchable wavy/warp, and its formation is carried out by following process, i.e. from rigid lining Bottom reverts to prestrain and stretchable PDMS rubber substrate 30, subsequently release strain, thus producing warp.
Provide a kind of method for producing wavy stretchable electrode and/or interconnection in figure 3.As shown in Figure 3A, lift Such as pass through micromachined for example, prepare wavy feature part 22 on a substrate 20.Carry part containing wavy feature 22 Surface substrate 20, as molding have corresponding running surface 32 elastomeric stamp 30 mother matrix.For example pass through via shade The evaporation of cover mask, and/or pass through electrode deposition, metallicity part 10 is deposited on running surface 32.
Fig. 4 provides a kind of method for manufacturing smooth wavy elastomeric substrate.Anisotropic silicon（100）Etching carries Supply substrate 20, this substrate 20 has sharp-edged 24 (picture on Fig. 4 B-).By depositing PR26 in the sharp-edged paddy 24 of substrate 20, Rotation PR makes sharp-edged paddy smoothened.Against substrate 20 cast elastomeric die 34.Die 34 has sharp-edged recessed features Point.Second elastomeric stamp 36 is cast on die 34, to produce the die with sharp-edged peak.Die 36 is entered using Su-850 Row is overwrought, and is properly cured.Rotation PR26 makes 50 sharp-edged paddy smooth.Against the 50 casting elasticity with smooth paddy Body substrate 30.Substrate 30 is removed, to represent wavy and smooth surface 32.
Figure 54 outlines a kind of method manufacturing wavy stretchable electrode by following process, and described process is, wavy Deposit on mother matrix, subsequently cast impression on this mother matrix, solidifies this die, thus electrode is transferred to mother matrix when lax.Figure 55 show by method in Fig. 4 combine in Figure 54 stretchable metal electrode on wavy PDMS prepared by method (Au, 300nm is thick) image.Interface 112 is shown between metallicity part 10 and substrate 20.Interface 112 can include a kind of easy In the material removing metallicity part 10 by the die 30 shown in the picture of bottom.In brief, a kind of method uses：? In 2 cleaning in advance " x3 " glass slide, SU-8 shallow layer 10 rotates, so that glass surface is properly covered in the initial scan.Will Slide block/SU-8 is contacted with the PDMS die with desired running surface characteristic (smooth paddy and sharp peak), and And gently apply pressure, so that all air bags are all removed.Stamp/mold structure is quick in front side under Burdick lamp Solidification 30 seconds, upset, and other 40 seconds in dorsal part resolidification.After solidification, hot plate toasts 5 minutes under 65 °C.? After baking, allow sample be cooled to room temperature, and SU-8 mould is peeled off from PDMS mother matrix.SU-8 will have with sharp-edged now The running surface of paddy rises and falls.In order that these paddy smooth, by a SU-82 and a SU-8 diluent mixing, and turned with high Speed rotation 90 seconds.It is exposed to Burdick lamp 20 seconds to solidify, then rear baking 3 minutes under 65 °C.Once cooling, by electrode Deposition, photoetching and etching/float off, and/or evaporated by shadowmask, come deposited metal line or contact.With MPTMS in SU-8 On metal process 1 hour, then against its cast elastomeric substrate.When being removed, PDMS has the smooth peak and valley of band Running surface rise and fall, and the metal structure being transferred.Figure 55 is to be drawn by the wavy of process manufacture of general introduction in Figure 54 Stretch the photo of electrode, additionally provide the letter as applied elongation strain (up to 30%) of this stretchable corrugated metal electrode The measurement resistance data of number.
An embodiment of the smooth wavy PDMS substrate 30 manufactured by the method for general introduction in Fig. 4 is provided in Fig. 5.Device Part assembly 60 can support to wavy substrate 30 according to expectation in non-undulating region (for example, the part of substantially flat), and It is connected to interconnection 10.
Fig. 6 show by smooth layer be spun to sharp-edged paddy or recessed feature partly in embodiment.Sharp-edged substrate 34 (figure 6A) smoothed by spin coating photo-curing epoxy resin 26, to produce smooth wavy substrate.There is the bullet of smooth running surface 32 Gonosome (for example, PDMS) die 30, is cast PDMS die and is subsequently removed die 30 from substrate 34 by the substrate against Fig. 6 B And obtain.
Fig. 7 is the photo of stretchable electrode.Fig. 7 A is the photograph of the cross section of elastomeric substrate 30 with running surface 32 Piece.Fig. 7 B is by the vertical view microphotograph that metal 10 evaporates the electrode manufacturing on wavy elastomeric substrate surface 32.Figure The focal plane of picture is located on sinuous peak.In fig. 7 c, focal plane be located at sinuous paddy on, and metal interconnection 10 with Electrode 250 makes electrical contact with.Stretchable electrode is by depositing through shadowmask to the evaporation smoothing in wavy elastomeric substrate 's.In this embodiment, it is stretched to for up to about 10% period under tension, electrode 250 keeps leading by interconnection 10 Electrical and connective.
Method disclosed herein and device can be used for manufacturing multiple electronic devices, including for example, stretchable passive type square Matrix LED display (see Fig. 8).Corrugated electrode (for example, interconnection 10 and touch pad 70) is patterned in two elastomeric substrate 30. By transfer, apparatus assembly 60 (being ILED pixel in the case) is patterned in corrugated electrode at touch pad 70.Two linings Bottom 30 is correspondingly combined, so that interconnection 10 is along different orientation（In this embodiment, vertically）Trend.Figure 9 illustrates The 2-D machinery tensility of such passive matrix light-emitting diode display.Except can single shaft and biaxial stretch-formed, this display also may be used Do not ruptured with significantly bending.Such many bending shafts provide following ability, i.e. electronic device is molded into curved surface, To produce the electronic device of bending, and it is used for being integrated in smart electronicses fabric construction or display.
Provide such a embodiment of curved surface electronic device in Fig. 10.Figure 10 shows " artificial eye ", its bag Include the inorganic photovoltaic diode array being distributed on spherical curvature lenses.Show four different visual angles of this artificial array.? The requirement to stretchable planar electronic device is schematically shown in Figure 11.In order to plane lamina is wound around spherical surface, This thin slice must stretch in more than one directions.
Figure 12 is a kind of fabrication scheme, for manufacturing the stretchable warp semiconductor array that can be suitable for curved surface.Thin Silicon cell, the deposition using gold selectable on substrate or titanium/gold to manufacture, and substrate is, for example, shown in picture (i) " female wafer ".Silicon is incorporated into the PDMS (picture (ii)) that prestrain (being shown as L+ Δ L) and UVO are processed.In both direction There is provided prestrain, as shown.Described combination is realized by known in the field any instrument of such as binding agent etc, For example it is applied to silicon cell, substrate or be applied to both this.Combination tool is applied in selected pattern, so that silicon tool Have by keep with the calmodulin binding domain CaM of this substrate physical contact (after a deformation) and be in warp architecture and not with this substrate thing Other regions (for example unconjugated or with respect to calmodulin binding domain CaM bonding force is the region of weak binding) of reason contact.From chip lining Bottom removes the substrate that prestress becomes, to manifest the flat grid (picture (iii)) of semiconductor array.Once substrate is from L+ Δ L is relaxed to L, and interconnection 10 (see picture (iv)) in weak binding region tilts into warp architecture, and apparatus assembly 60（For example, half Conductor silicon touch pad）Remain bonded to substrate 30.Thus, warp interconnection 10 introduces tensility to whole array, especially into The ability that assembly 60 moves with respect to other assemblies 60, and do not destroy the electrical contact between assembly 60, thus to bending Surface or flexible surface provide conformal ability.
Figure 13 provides optical microscopic image (upper two width of the stretchable warp silicon array in single lattice structure 140 Picture), there is the lattice structure 160 of the interconnection of multiple connections（Lower-left picture）, and flower-like structure 150（Bottom right picture）.? In all these embodiments, interconnection 10 tilts in middle position, and interconnects end and be attached to touch pad 70.Interconnection and touch pad 70 are supported On PDMS substrate 30.The close-up illustration of several different interconnection geometry is further provided in Figure 14-17.Figure 14 provides To illustrate basic warp or wavy interlink 10, this interconnection 10 has band first end 100 and the second end 110 to electron microscope image Middle body 90.Middle body is warp architecture.End 100 and 110 is connected to apparatus assembly, touch pad 70 energy in the case Enough and apparatus assembly sets up electrical contact.Interconnection 10 and touch pad 70 are supported on substrate 30, such as elastomer PDMS substrate.
Figure 15 is the adjacent devices assembly being connected to each other by multiple (two) interconnection 160（For example, touch pad 70）Electricity Sub- MIcrosope image.Compared with Figure 14 by Figure 15 and show, adjacent devices assembly 70 can be connected each other by one or more interconnection 10 Connect, to provide extra motility to electronic device.For example, there is relative large access area（footprint）Apparatus assembly Or touch pad 70, alternatively it is connected to another apparatus assembly by multiple interconnection.
Figure 16 is in the electron microscope image of the interconnection of flower-like structure 150.Compare with lattice structure, flower-like structure has There is the interconnection being orientated along more than two longitudinal direction.In this embodiment, there are four independent orientations, so that such as touch pad 70 etc apparatus assembly can contact diagonally adjacent apparatus assembly.In this embodiment, interconnection 10 has optional combination Region 102, it occupy between interconnection end 100 and 110, and interconnection end 100 and 110 is electrically connected to an apparatus assembly (not shown), from And middle body 90 is divided into two uncombined regions 92, each is respectively provided with warp architecture.
Figure 17 is arranged on the electron microscope image of the interconnection in bridge shape structure 130.In bridge shape structure, from bridge central authorities Stretch out three or more on part peak 120 and interconnect end.For example, two interconnection intersecting in uncombined region result in One peak 120, this peak 120 has the four interconnection ends stretched out from it.When apparatus assembly is in interlaced arrangement, peak 120 can have three ends stretched out from it.In the case of many mutually downlink connection between apparatus assembly, can stretch out from peak 120 and be more than Four ends.
Although the apparatus assembly shown in many accompanying drawings is touch pad 70 provided herein, the method required by here and device It is connectable to substantial amounts of apparatus assembly, to provide stretchable and therefore deformable electronic device.For example, Figure 18 shows Apparatus assembly 60, it is other that be connected in array structure by the warp interconnection 10 being supported in elastomeric substrate 30 The photodiode of photodiode.
Figure 19 shows the unidimentional stretch behavior of warp silicon array.Picture (i) is the warp silicon not applying any adaptability to changes The figure of array.Apply a tensile force (as shown in the arrow above picture (i)) to stretch this array in one direction.As picture (2), shown in-(4), warp interconnection flattens.When release tensile force in picture (5), this array returns to its warp structure (see picture Face (6)-(8)).Relatively showing between picture (1) and (8), the warp structure before and after stretching is consistent, this table This process bright is reversible.
The warp array of apparatus assembly can be easily transferred to curved surface, including rigidity or inelastic bending table Face.The bubble of Figure 20 or balloon die 400 provide for being easy to curved surface is carried out with a kind of device and the mistake of bringing into conformal contact The embodiment of journey.Elastomeric substrate 30, is of about the PDMS film of 20 μ m-thick in this embodiment, is fixed in housing chamber 300, to carry For the shell volume 310 being limited by inward-facing substrate wall and housing chamber.Apply positive pressure（For example, outside being more than within room 300 The pressure of portion's pressure）Produce raised substrate surface 200, it can receive substrate with spill and carry out bringing into conformal contact.On the contrary, reversely Pressure produces recessed surfaces 210, and it can receive substrate bringing into conformal contact with convex.Local elasticity's (for example, Young mould of substrate Amount) spatial manipulation allow to produce complicated surface geometry shape.The lower-left picture of Figure 20 illustrates a kind of being used for by syringe It is introduced into room 310 and gas bleeding and mode that the pressure in shell volume 310 is controlled.Image on figure right side is to increasing Plus the different curve of PDMS film that responded of positive pressure grade.For appointing of warp interconnection, is provided on elastomeric substrate Where method and device all can be used together with such device for transferring to curved substrate.
Figure 21 outlines and produces the another way that warp or convex type (pop-up) interconnect on curved surfaces.One elasticity Body thin film casts against profiled surface, to produce the elastomeric substrate of at least partially curved surface.This substrate stretchable with will This surface flattens, so that this substrate can be suitable for curved surface and also can be suitable for flat surfaces.Interconnection is applied to flat stamps, And once release tensile force, this substrate surface relaxes and returns to surface geometry shape, thus producing strain, this strain in interconnection Adjusted by the projection of this interconnection middle body.
Figure 22 provides by device shown in Figure 20 Lai an embodiment of " two-dimentional " stretching warp silicon array.Here is real Apply in example, this interconnection includes the mutual downlink connection of multiple warps being in lattice structure, wherein interconnect and be made up of the thick silicon of 290nm.Rise It is just flat warp silicon array（The picture left above picture）It is placed in housing, and apply positive pressure so that this array is expand into gas Bubble or balloon structure (for example, curved surface).Maximum swelling is shown in rightmost image, and subsequent this forward direction that removes is pressed Power.Similar to the result of uniaxial tension flat substrate, this " bending " stretching is reversible.Maximize altogether with curved surface expanding Any stage of shape contact, this array can be transferred to curved surface by any mode well known in the art.Figure 23 illustrates Printed by the silicon that balloon die is carried out to glass lens coated with binding agent (elastomeric substrate or SU-8).Lens can be Concavees lens can also be convex lenss.In this embodiment, respectively, R=19.62mm and 9.33mm.
Embodiment 1：Controlled warp structure in semiconductor nano-strip, and the application example in stretchable electronic device
For these materials almost all of application for it is important that to the composition of nanometer semiconductor structure, shape, Locus and/or the control of geometry.Although exist for define nano wire and nano belt material composition, diameter, length Degree and the method for position, but comparatively almost do not have new way to control their two and three dimensions (2D and 3D) structure. Provided herein is a kind of machinery strategy, for creating the certain form of 3D shape being otherwise difficult to generate in nano belt Shape.This embodiment introduces being applied in combination of Lithographic patterning surface chemistry, with providing, support substrate is glued Mixture site and the spatial control of elastic deformation, thus promote the local displacement of well-controlled.The warp geometric form of careful design Shape creates in the nano belt of GaAs and Si in this way, and these structures all carry out quantization using the analysis model of this mechanism and retouch State.As an application example, specific structure is to manufacture to have the tensility (up to～100%) of superelevation degree, compressible Property (up to～25%) and flexible（Radius of curvature as little as～5mm）Electronic device (and opto-electronic device) provide one kind Approach.
2D the and 3D structure of nano belt and nano wire, by leafing system using interior in residual stress by these yuan Part is coupled to strained elastomeric support or tubulose（Or helical form）Structure, is controlled in their growth period, to produce Raw geometry in particular, such as coil, ring and branch's layout, or be controlled after their growth, for example just to produce Chord curve wavy texture.The semiconductor nano-strip with wavy geometry receives publicity, and is partly because, and they allow high Performance, stretchable electronic system be used for potential apply, such as spherical curvature focal plane arrays (FPA), intelligent rubber surgical glove with And conformal structure health monitor.The stretchable approach of this electronic device itself, is to be different from and be perhaps complementary to rigidity The alternative of these same application that device island is used together with stretchable metal interconnection.Aforementioned wavy nano belt has two Individual major defect：(i) they spontaneously form, by material modulus and band thickness limited fixing cycle and amplitude, from And almost the geometry of ripple or phase place cannot be controlled, and (ii) is wavy several by be not optimised produced by this process What shape is limited, and the maximum strain that they can be adjusted is in the range of 20-30%.The process herein introducing is limited using lithographic printing Fixed surface cement site and the elastic deformation of support substrate, with using the deterministic control to warp geometrical shapes To realize warp structure.For this class formation extensive by the independent nano belt of optional one group in tissue array, Ke Yijin Line period or acyclic design.Special geometry for stretchable electronic device design enables range of strain high Reach close to 150%, even if being also such in the friable material of such as GaAs etc, this is consistent with the analysis model of this mechanism, and As many as more ten times greater than the result of previous report.
Figure 24 shows each step of this process.Manufacture the preparation starting to following mask, this mask is used for poly- diformazan Surface chemistry binding agent site in radical siloxane (PDMS) elastomeric substrate is patterned.This process is related to make deep UV （UV）Light (240-260nm) passes through a kind of amplitude photomask of unique types（Prepared by step i）, it is referred to as UVO mask, And itself and PDMS bringing into conformal contact.UVO mask possesses the recessed feature part of the fluctuating in transparent region, so that exposing to UV Light is formed close to the patterning ozone region in PDMS surface.Ozone by do not change hydrophobic accounted for by CH3 and H end group leading The polarity and reactive higher surface of surface conversion（That is, active surface）, result just has the work(of OH and O Si O Energy.Unexposed region keeps unmodified surface chemical property（That is, inactive surface）.The process herein introducing, is related to Larger single shaft prestrain (εpre=Δ L/L, changes to L+ Δ L for length from L), at PDMS substrate (thickness～4mm) On exposure (step ii).For the mask with simple periodic line pattern, we will be active in the step (iii) of Figure 24 A Striped（Illustrated with the line being designated as " active surface "）Width and nonactive striped width（For example, adjacent active striped it Between distance）It is expressed as W in step (i)actAnd Win.Active region can strength and be irreversibly attached on surface On expose on OH base or the other materials of Si O base.The binding agent site being patterned using these, with nano belt Create the good 3D geometry limiting, following article is described.Alternatively, by with similarly pattern before this substrate contact Change described interconnection, there is provided similar adhesive bond site pattern.
In this embodiment, nano belt is made up of monocrystal silicon and GaAs.Using previously described process (see Khang et al. Science311,208-212 (2006)) silicon ribbon is prepared by silicon-on-insulator (SOI) chip.GaAs band contains outside by molecular beam Prolong grow nonparasitically upon another plant (MBE) be formed at the multilamellar on (100) SI-GaAs chip silicon doping N-shaped GaAs（120nm；Carrier concentration 4 × 1017cm3）, Semi-insulating GaAs（SI-GaAs;150nm）And AlAs (200nm).Epitaxial layer is in H3PO4And H2O2Water-soluble etching Chemical etching in agent, is used photoresist line along (011) crystal orientation patterning as etching mask, to limit described Band.Remove photoresist and then (it is 2 that ethanol and 49% water become the volume ratio of HF in the ethanol solution of HF by water immersion：1) In, remove AlAs layer, thus, release have determined by photoresist width (for the embodiment shown in Figure 24 D be～ 100 μm) GaAs band (n-GaAs/Si-GaAs).Ethanol is added to HF solution, just reduces frangible band due to being dried During capillarity and the probability that ruptures.Low surface tension (compared with water) also make GaAs band space layout in by The disorderly minimum that cause is dried.In final step, deposit a thin layer SiO2(～30nm), to provide necessary Si OH surface Chemical substance, to be attached to the active region of PDMS.
SOI or GaAs processing chip was laminated against PDMS substrate that processed through UVO, prestrain （Band is oriented parallel to the direction of prestrain）, with 90 °C of baking several minutes in stove, and remove chip, by all of band transfer To PDMS surface（Step iv）.Heating is easy to make, the natural SiO on silicon ribbon2Layer or the SiO depositing on GaAs band2Layer with Bringing into conformal contact form strong siloxanes and combine (namely O Si O) between the active region of PDMS.Relatively weak Van der Waals Band is attached to the inactive surface region of PDMS by power.Relax the strain in PDMS, by by band from the inactive area of PDMS Domain physical separation and produce warp（Step v）.In active region, because extensive chemical combines, band is retained as being bound to PDMS. The 3D band geometry that result is formed（That is, the spatial varying pattern of warp）Amplitude depending on prestrain and surface activity Pattern（For example, WinAnd WactShape and size）.（Binding site by patterning on tape, it is possible to achieve similar Result）.When single line pattern, WinDetermine width and the amplitude of warp with prestrain.Due to producing " wavy " silicon The mechanical instability of that type, works as Wact>When 100 μm, same band also forms wavelength and amplitude is much smaller than warp Sine wave（See Figure 25, with different WactThe sample image being formed）.As the final step of above-mentioned manufacture, 3D band structure can lead to Cross casting and curable liquid pre-polymer and be encapsulated in PDMS（See Figure 24 step vi）.Liquid is due to its low viscosity and low surface Energy and flow and be filled in band and substrate between formed gap（See Figure 26）.
Figure 24 D is shown in scanning electron microscope (SEM) image of the oblique viewing angle of GaAs band tilt on PDMS, wherein εpre=60%, and Wact=10 μm and Win=400μm.This image shows is homogeneous and periodic warp, for band all of in array It is respectively provided with the consistent phase place of common geometry and space.Anchor point be recorded the binding agent position of lithographic definition well Point.Illustration illustrates the SEM image of calmodulin binding domain CaM；Width is～10 μm, WactUnanimously.This image also shows, even if in binding site Place, the surface of PDMS is also flat.This behavior, is substantially different from previously described close coupling wavy texture, this shows, for Situation described herein, PDMS causes displacement, but does not closely correlate to warp process (that is, its modulus does not affect the several of band What shape).Thus, PDMS shows as soft and nondestructive instrument, for the power by applying in binding agent site to band Manipulated.
Figure 27 A shows with different εpre(Wact=10 μm and Win=190 μm) it is formed at the optics of warp band on PDMS Microscope side view.The height (for example, " amplitude ") of warp is with εpreAnd increase.Band in non-active region is in low εpreUnder And be not completely separated from（See with εpreThe sample of=11.3% and 25.5% formation）.For higher εpre, carry (thickness h) to divide from PDMS From so that warp be formed with vertical displacement profile it is characterised in that：
Wherein:
As determined to the nonlinear analyses of warp being formed in thin uniform layer.The maximum tension of band strains
The width of warp is 2L1And the cycle is 2L2.Because to h<H for 1 μm2π2/(12L1 2) it is much smaller than εpre（That is, In report>10%）, so this amplitude does not rely on the mechanical property of band（For example, thickness, chemical composition, Young's moduluss, etc.） And mainly determined by the layout in binding agent site and prestrain.This conclusion shows the general applicability of this approach：By any The band of material manufacture is all formed as similar warp geometry.This prediction is obtained with using Si and GaAs band as used herein Result consistent.The profile being calculated, with dotted lines in Figure 27 A, is directed to 33.7% and 56.0% prestrain, This profile is consistent well with the observed result in GaAs band.Additionally, the parameter of the warp shown in Figure 27 A (includes week Phase, width and amplitude) except being in low εpreOutside consistent with analysis result（Table 1 and 2）.This research knot interested Fruit is, even for larger εpre(such as 56.0%), in band, maximum tension strains still less (such as～1.2%).This Scaling allows tensility, and the friable material even for such as GaAs is also such, as mentioned below.
The binding agent site that lithographic printing limits in size and geometry can be than simple with what the structure in Figure 24 was associated Fence or comb mesh pattern are increasingly complex.For example, there is different in width and the warp of amplitude can be formed in single carrying.As One example, Figure 27 B illustrates, the SEM image of warp silicon ribbon（Width and thickness are respectively 50 μm and 290nm）, it is formed with 50% pre- Plus strain and be characterized as Wact=15 μm and be W along strip lengthin=350,300,250,250,300 and 350 μm of binding agent position Point.This image clearly it is shown in the change of each width of adjacent warp in carrying and amplitude.For different bands, warp band Out of phase can also be formed with.Figure 27 C illustrates the embodiment of system on silicon, and it is designed to phase place in warp with vertical In the distance of strip length and linear change.UVO mask for this sample has 15 μm of WactWith 250 μm of Win.In PDMS print Angle between active striped on mould and silicon ribbon is 30 °.It is relatively simple due to binding agent site is carried out with lithographic printing control, So other multiple probabilities can be easily achieved, and some probabilities are for example shown in Figure 13-17.
Simple scenario wherein the ε pre=60%, W of warp GaAs band on PDMS as shown in Figure 27 Dact=10 μm and Win Difference illustrates important one side for the application of stretchable electronic device.Described profile, divides with for mechanical Analysis scheme is consistent well, shows and works as Win=100μm（And it is less）When broken down due to the fracture in GaAs.This event Barrier cause is more than GaAs yield point（～2%）Elongation strain（This case is～2.5%）.Therefore, for stretching and pressure The robustness of contracting and the structure that optimizes, can be by selecting and εpreProportional Win(>>Wact) and realize.In the case, may be used To adjust prestrain up to and to be more than 100%.We are by supporting applying power directly to verify such tensility to PDMS. End-to-end distance (L with partprojected) change, a kind of mode that tensility and compressibility are quantified is provided, According to：
WhereinRepresent maximum/minimum length before fracture, andFor the length under relaxed state.Stretching and Compression corresponds respectively toThanBigger and less amount.Warp band on PDMS, wherein Wact=10μm And Win=400 μm and εpre=60%, the tensility of display 60%（That is, εpre）And up to 30% compressibility.To carry embedding Enter PDMS, just structure is carried out with mechanical protection, and also produces continuous and reversible response, but change micro- in frame for movement Little.Specifically, tensility and compressibility drop to～51.4% (Figure 28 A) and～18.7% (Figure 28 B) respectively.Top in band PDMS matrix in portion makes the peak of warp slightly flatten, and is partly because the contraction of solidification induction upper strata PDMS.At these Form minor cycle ripple in the region of larger compression strain, reason is oneself of the wavy band structure of generation of type as discussed previously The mechanism of sending out.Mechanical breakdown often starts from these regions, as shown in Figure 28 B, thus reducing compressibility.There is Wact=10 μm and Win =300 μm of warp structure avoids this class behavior.Although such embodiment is omited compared with showing the embodiment shown in Figure 28 A Micro- lower tensility, but due to there is not short-period wave, compressibility is added to～26%.On the whole, be formed at pre- Plus the monocrystalline GaAs nano belt with warp in the surface chemistry binding agent site with patterning on the PDMS substrate of strain, exhibition Reveal tensility higher than 50% and the compressibility more than 25%, put range of strain corresponding to close to 100% full reduced.Pass through Increase εpreAnd Win, and by using can be higher than PDMS elongation backing material, can improve further these numeral. For even more fine system, these manufacture processes can be repeated, to produce the sample with multilamellar warp band（See Figure 29）.
The direct result of this larger draftability/compressibility be and its height mechanical flexible.Figure 30 A-C shows and retouches State the optical microscope image of the warp architecture of this feature.PDMS substrate (thickness～4mm) is manipulated into concave surface respectively（Radius～ 5.7mm）, plane and convex surface（Radius～6.1mm）Curvature.These images illustrate how profile changes to adapt to bend initiation Surface strain（It is～20-25% for these situations）.It is true that these are shaped like in compression (～20%) and stretching（~ 20%）The shape of middle acquisition.Embedded system shows the flexible of even more high degree due to neutral mechanical planarization effect. When PDMS top layer and bottom have comparable thickness, warp shape is during bending and unchanged（Figure 30 D）.
In order to confirm these mechanical attributes in functional electric device, we are similar to shown in Figure 30 using having The warp GaAs band of profile, forms Schottky contacts by thin gold electrode deposits to the SI-GaAs side of band, just constructs gold Genus-SEMICONDUCTOR-METAL photodetector (MSM-PD).Figure 31 A be shown in stretching～50% before and after MSM PD geometry Shape and equivalent circuit and top view optical photograph.In the case of not having light, electric current is not almost had to flow through PD；Electric current with Infrared ray wave beam（～850nm）The enhancing of irradiation and strengthen (Figure 31 B).Asymmetric in current/voltage (I-V) characteristic Property, the difference of the electrical characteristics of contact can be attributed to.Figure 31 C（Stretching）With Figure 31 D（Compression）Be shown in different degrees of stretching and The current -voltage curve recording under compression.When PD be stretched up to 44.4% when electric current increase, then as further stretching and Reduce.Because light source is in the intensity constant of per unit area, electric current with stretching increase can owing to warp GaAs band with Its open and flat projected area opened（Referred to as effective coverage, Seff）Increase.Further stretch PD, can cause from the teeth outwards and/or Form defect in the lattice of GaAs band, lead to current reduction, finally lead to open a way in fracture.Similarly, compression reduces Seff And therefore reduce electric current (Figure 31 D).These results indicate that embedded warp GaAs band offer in PDMS matrix can be used for various The optical sensor of the completely stretchable/compressible type of different application, such as wearable monitor, curved planar reformation array and other Device.
Sum it up, this embodiment shows, there is the mollielast that lithographic printing limits binding agent site, can be used as half The instrument of the 3D structure of particular category is created in conductor nano belt.Stretchable electronic device provides for these structure types One embodiment in many possible application fields.Simple PD device demonstrates ability to a certain extent.Height to structure Control, and the ability that high temperature processing step (for example, the formation of Ohmic contact) is divided out from warp process and PDMS, showing can To manufacture more complicated device (for example, transistor and little circuit wafer).The phase place of the well-controlled of the warp in adjacent belts, be Electrical connection multiple element provides chance.Equally although the test reported uses GaAs and Si nano belt herein, but other materials Material (for example, GaN, InP, and other quasiconductors) and other structures（For example, nano wire, nanometer film）It is also compatible with this approach.
The manufacture of GaAs band:There is customization epitaxial layer（Describe in detail in literary composition）GaAs chip be purchased from IQE Inc., Bethlehem,PA.Photolithography and wet chemical etch produce GaAs band.AZ photoresist (for example, AZ5214) with The speed rotational casting of 5000rpm reaches 30 seconds on GaAs chip, then in 100 °C of soft bakings 1 minute.By have along (011) crystallographic direction of GaAs and the mask of patterned lines that is orientated is exposed, subsequently development and in photoresist Produce line pattern.Gentle O2Plasma (that is, descum process) removes remaining photoresist.Then GaAs is brilliant Piece is anisotropically etched 1 minute in following etchants, and etchant is as follows：4mL H3PO4(85% weight), 52mL H2O2 (30% weight), and 48mL deionized water, cool down in ice-water bath.AlAs layer is using dilution (volume ratio 1 in ethanol:2) HF SolutionDissolving.The sample of Relaxation Zone is carried on female wafer, is dried in fume hood.Quilt The sample being dried is coated to the 30nm SiO depositing by electron beam evaporation2.
The manufacture of silicon ribbon：By silicon-on-insulator (SOI) chip, (Soitect, Inc., top silicon 290nm bury oxygen to silicon ribbon Compound 400nm, p-type) manufacture.This chip is patterned using AZ5214 photoresist by traditional photoetching technique, so SF6 plasma (PlasmaTherm RIE, SF640sccm, 50mTorr, 100W) is adopted to etch afterwards.When photoresist is used After acetone washes away, etching buried oxide layer in HF (49%) then.
The manufacture of UVO mask：Vitreous silica slide block cleaning 15 minutes in Piranha washing liquid (at 60 °C), and using foot The amount complete rinsed clean of water.The slide block of cleaning is dried by nitrogen blowing, and is placed on the interior of electron-beam evaporator, with quilt Sequential applications 5-nm titanium（As adhesive phase）With 100-nm gold（Mask layer for ultraviolet light）.Negative photoresist, That is, SU85, with 3000rpm rotating speed, on slide block, rotational casting reaches 30 seconds, to form the film of～5 μ m-thick.Soft baking, is exposed to purple Outside line, toasts afterwards, and the pattern producing is developed in photoresist.Gentle O2Plasma (that is, descum Process) remove remaining photoresist.Photoresist is used as mask, with respectively using golden etchant（That is, I2With KI's Aqueous solution）With titanium etchant（That is, dilution HCl solution）To etch Au and Ti.
The preparation of PDMS die：Thickness is～the PDMS substrate of 4mm prepared by following process, i.e. by prepolymer (A:B= 1:10, Sylgard184, Dow Corning) pour into petri diss, subsequently toast 4 hours under 65 °C.There is suitable chi The flaggy of very little and rectangular shape, cuts from the cured sheets being formed, then uses isopropyl alcohol, is dried up with nitrogen.Using The custom-designed stage is by PDMS mechanical stretching to desired degree of strain.By short UV light (low pressure mercury lamp, BHK, 173μW/cm2From 240 to 260nm) pass through and be placed as the UVO mask contacting with PDMS and the base light that these are stretched 5 minutes, produce the surface chemistries of patterning.
The formation of warp GaAs band and embedded：There is painting coated with SiO2Relaxation Zone GaAs chip, using patterning table Face chemical process is laminated by the PDMS against stretching.Stove is toasted 5 minutes with 90 °C, is cooled down with room temperature in atmosphere, so Slow strain in PDMS for the relaxing afterwards, produces warp along each band.Embedded warp band, the mighty torrent being introduced into (flood) It is exposed to ultraviolet light and reaches 5 minutes, then liquid PDMS prepolymer is cast as the～thickness of 4mm.Or it is solid with 65 °C in stove Change this sample 4 hours, or solidify this sample at room temperature and reach 36 hours, so that this prepolymer is solidified, embedded to stay Warp band in the solid matrix of PDMS.
The characteristic description of warp band：By by sample inclination～90 °（For non-embedded sample）Or～30o（For Embedded sample）, using optical microscope to described band imaging.It is coated to a thin layer gold in this sample（Thickness～5nm） Afterwards, SEM image record is on Philips XL30 field emission scanning electron microscope.For being pre-stretched the same of PDMS die Step, the sample obtained by being used for stretching and compressing.
The manufacture of SMS PD and characteristic description：The manufacture of PD starts from the sample in the structure shown in the picture of bottom of Figure 24 B.Poly- Ethylene glycol terephthalate（PET）Piece～the wide bar of 0.8mm (strip) is gently placed on PDMS, this PDMS's is vertical Axle is perpendicular to each longitudinal axis of described band.This is used as the shadowmask of the thick electron beam evaporation of golden film of 30nm (to be formed Schottky electrode).Remove PET bar and the PDMS die of lax prestrain, form the SMS being built with warp GaAs band PD.Liquid PDMS prepolymer is cast into the region not having electrode on band, then solidifies in stove.Gold electrode extends beyond PDMS, can be detected using analyzing parameters of semiconductor device (Agilent4155C).In the measurement of photoelectric sensitivity, make Manipulate PD with the mechanical phase stretching and compress.IR LED source (wavelength 850nm) provides illumination.
Embodiment 2：Transfer
Our technological approaches employ the foregoing some designs implemented with the printing process based on flat stamp. Although these basic fundamentals provide the point of penetration of optimism, the New function that must be introduced into many bases is to cater to HARDI（Hemisphere Shape detector array is imaged）The challenge of system, as mentioned below.
Figure 32 and 33 illustrates the common strategy related to the transfer to curved surface.First group of step（Figure 32）It is related to manufacture With the elastomeric stamp manipulating thin and curved surface spherical in shape, this die is designed to the Si CMOS " microchip " of interconnection from crystalline substance The flat surfaces of piece float off, and then this geometry are converted into hemispherical.By casting and curable liquid pre-polymer against The high quality optical element that radius of curvature as requested selects（That is, the convex lenss of coupling and concavees lens）Obtain such as poly- diformazan The elastomer of radical siloxane (PDMS), and form the die elastomer for said process.This die has the wheel rim of molding.Logical Cross the molded indentation on this wheel rim（Figure 32 is illustrated with dashed circle）It is matched with rigid, the circular maintenance of appropriate size Ring, this element of radial drawing, just this spherical die is deformed into the plane lamina of stretching.The die of this stretching is adopted thin Interconnection touches and supports preforming and undercutting etching Si CMOS " microchip " female wafer, then die is peeled off " spray The element of " microchip " that interconnect with these of ink ".Van der Waals between microchip and mollielast element Reciprocal action is to this procedure provides enough bonding forces.
Maintenance ring is removed so that PDMS relaxes returns to its initial hemispherical shape, thus completing microchip array from flat Face is to spherical deformation.This deformation causes the compression strain at stamp surfaces.By interconnection local leafing and carry upwards Rise (Figure 32 lower-left), these strains are accommodated among CMOS microchip array.These " raised " interconnection absorb strain, thus Avoid harmful change microchip being caused damage or its electrical characteristics is caused to be led to by strain.Strain in microchip Keep below～0.1%, be achieved that this two targets.The required space of interconnection limit the maximum filling of CMOS microchip because Number.However, described photodetector occupies almost whole pixel region, thus provide reaching the direct of 80% fill factor target Approach.
In second group of step (Figure 33), " ink-jet " hemispherical die is used for these elements are transferred to matched shape The resulting devices substrate of cavity（For example, in this embodiment for having the glass substrate of coupling hemi-spherical cavities）On.This turn Print process uses ultraviolet（UV）Curable photosensitive polymer, such as light curable BCB（Dow Chemical）Or polyurethane (Norland Optical Adhesive) is as binding agent.These materials with（Tens of micrometers thick）The form application of fluid film In device substrate.Once with this stamp contacts, liquid laminar flow is with rising of being suitable for being associated with microchip and bump interconnection Volt structure.Through the UV light of transparent substrates, solidify photosensitive polymer, and convert it into solid form, thus once removing print Mould just produces top surface that is smooth and planarizing.For forming the finally integrated of function system, it is related to electrode and photodetector The deposition of material and patterning, and the lithographic printing of the bus to external control circuit is limited.
The approach of Figure 32 and Figure 33 has several noticeable features.First, it adopts state-of-the-art plane electronics skill Art, can carry out reliable and economical and high performance operation on hemisphere substrate.Specifically, microchip includes The silicon transistor processing under 0.13 lim design rule, to produce the local Pixel-level disposal ability for HARDI system. Traditional technique forms these devices using SOI wafer.Buried oxide provides sacrifice layer (to carry out bottom using HF Cut etching) to prepare the microchip for printing.Interconnection is made up of the metal wire of narrow and thin (～100nm).
Second feature is, this approach uses elastomer element and Machine Design, with can well-controlled from plane deformation To hemisphere.Reversibly, the linear mechanism in transfer die and comprehensive mechanistic model realizes this control, as mentioned below. 3rd concerned aspect is that the specific basic module of the strategy of transfer process and control bonding, in planar applications In shown.It is true that the step having designed for those planographics apply, it is applicable to Figure 32 and 33 process. Figure 34 illustrates a kind of household printer, and it has and is suitable for integrated vision system and pneumatic actuator used in this process.
The printer system of these types is for confirming some aspects of the process of Figure 32 and 33.Figure 35 illustrates a kind of hemisphere The scanning electron image on the surface of shape die, described hemispherical die is using mutual with heavily doped silicon ribbon in quadrate array Monocrystalline silicon islands array even carries out " ink-jet ".Figure 36 illustrates optical imagery.In plane to during spherical deformation, these bandings interconnect Raised in the way of shown in Figure 32.The critical aspects of the interconnection of these types are, when combination is with the microchip to global formation Transfer when, they reduce the need to the high-resolution curved surface plane photoetching directly processing on hemisphere face or other forms Ask.
In addition to material and common process strategy, also execute to hemispherical die, bump interconnection and rigid device island The complete computation modeling of interactive elastic mechanical response.The physical characteristics that these calculate this process of announcement are in promotion engineering The degree controlling and optimizing.Shown based on the simple estimation of linear elasticity plate theory, for the thick die of 2mm and 1cm radius Ball, the level of strain related to the process of Figure 32 can reach 10% or higher.Therefore, in order to reliably carry out Engineering Control, It is necessary to run this mask in linear elastic region, to strain the twice reaching this value, that is,～20%.Figure 37 illustrates The experimental stress/strain curves of several variables of PDMS, we are practiced in based on entirety using this curve and flat stamp The degree of printing.184-PDMS is intended to provide good original material, and because it provides highly linear and elastic response, strain is up to ～40%.
Such as these machinery tolerance, in conjunction with convex with the document record value of modulus, the geometry of microchip and band The interconnection rising, is provided with modeling necessary information.Using two kinds of computed paths.The first is comprehensive finite element modeling（FEM）, Wherein analyze device details on a planar substrate and interconnection geometry（For example, size, interval, multilamellar）.Different materials （For example, die, silicon, interconnection）Be directly brought into analysis.Apply transverse pressure with by die and circuit modifications for desired spherical shape Shape.Finite element analyses provide stress distribution, the particularly maximum strain in device and interconnection, and between deformable means Heterogeneity interval.This approach is advantageous in that, all details of its acquisition device geometry and material, and therefore can by with In the effect of the different designs probing into transfer process, to reduce maximum strain and inhomogeneity.However, the method computation-intensive And therefore time-consuming, reason is that it is related to a large amount of length scale and the modeling to a large amount of structure devices on die.
Second approach is the cell model for device (microchip), and this model just analyzes each device Yi Dan loading Mechanical performance.Each device is expressed as a structure cell, and it passes through finite element to the response of mechanical load (for example, bending and tension force) Method and study comprehensively.Then, each device is all replaced by the structure cell linking by interconnection.Then by this cell model Include finite element analyses, to substitute the detailed modeling to device and interconnection.Additionally, at away from spherical edges, strain facies is to equal One, integrated such that it is able to carry out to many structure cells, and their performance can represent with degree of roughness model.In spherical edges Near, answer And of Varying Depth heterogeneity, the therefore detailed modeling to device it is still necessary to.The advantage of this approach is, significantly reduces Amount of calculation.Comprehensive finite element analyses in the first approach are used for verifying this cell model.Upon checking, this structure cell Model provides for a kind of powerful design tool, because the difference that it is suitable for quickly detecting device, interconnection and its spacing sets Meter.
Figure 38 shows preliminary FEM result, is drawn into plane geometric shape for by hemispherical die（And relaxed And return to hemispherical）, as Figure 32 describes.Upper picture illustrates the cross-sectional view of hemispherical die, and it has similar in Figure 32 Shown in die geometry.These results are shown in the slight space inhomogeneity in the strain of the film being stretched, As its heterogeneity thickness proves.By for by cast and be solidified to form die against structure make suitably to select, to set Meter die thickness profile, can eliminate these inhomogeneities.However, being important to note that, some inhomogenous strains are subjected to, Because (i) bump interconnection inherently tolerates distortion, and (ii) microchip not necessarily ideally occupy each location of pixels Center；Bigger photodetector will be filled for pixel region with homogeneous back electrode, and it can create electrical contact with microchip, And the position in pixel region is unrelated with microchip.
This modeling can also determine the degree of strain in Si CMOS microchip.This system should be designed to, and keeps this Slightly cake core strain less than～0.1-0.2% to avoid changing electrical characteristics and possibly because fracture or leafing lead to machinery Fault.This modeling is easy to be designed as die and treatment conditions, it is to avoid microchip is exposed to the strain higher than this scope.
Embodiment 3：Twin shaft stretchable " wavy " silicon nanometer film
This embodiment introduces a kind of monocrystal silicon of the stretchable form of twin shaft, its by the double dimension warps on elastomeric support or The silicon nanometer film composition of " wavy ".Have been described with the manufacture process for these structures, and represent it in various not Tongfangs Geometry upwards and each different aspect of the response to single shaft and biaxial strain.The analysis mould of the mechanism of these systems Type is provided for the quantitative framework understanding their behaviors.The material of these types provides to be directed to has completely two-dimentional tensility The approach of high performance electronics.
Assume the electronic device of mechanical flexible, concerned in information display, x-ray imaging, photoelectric device and Application in other system.Reversible tensility be a kind of unlike this but the mechanical property of great technological challenge, it will be permitted Permitted device to realize with the only irrealizable function of flexible electronic device institute, such as intelligent surgical glove, electric eye video camera And personal health monitor.In a kind of approach of this electron-like device, rigid device island is interconnected by stretchable line, for can not The apparatus assembly of stretching provides the tensility of circuit grade.In substituting strategy, thin single crystal quasiconductor and other electronics The ad hoc structure form of material allows these devices itself to have tensility.Nearest example is related in silicon and GaAs nanometer Band（, between tens of and hundreds of nanometers between, width is in micrometer range for thickness）Middle use warp, one-dimensional " wavy " geometric form Shape, to realize in mos field effect transistor（MOSFET）, metal-semiconductor field effect transistor （MESFET）, the single shaft tensility in PN junction diode and Schottky diode.This embodiment shows, the receiving of similar material Rice film is formed as two-dimentional (2D) wavy geometry, to provide complete 2D tensility.Describe for such system Manufacture process, and such system mechanics response detailed assay features and analysis modeling.
Figure 39 schematically shows the step for forming two-dimentional stretchable silicon nanometer film on elastomeric support.Real for this Example, these films are manufactured by silicon-on-insulator (SOI) chip (Soitec.Inc, p-type), first pass through is limited by photoetching process suitable Photoresist pattern, forms the square array in hole in the silicon of top（～2.5 μ m diameter ,～25 μm of spacing）, then pass through anti- Answering property ion(ic) etching (PlasmaTherm RIE, SF640sccm, 50mTorr, 100W) removes the silicon of exposure.Same step limit Determine total lateral dimension of film, for sample described herein, described total lateral dimension is in the range of 3-5 square millimeter.Thick Degree is between 55nm and 320nm.Etched sample is immersed in concentration Fluohydric acid. (HF49%), just eliminates burial SiO2Layer（145～1000nm is thick）；Wash in acetone, just eliminate photoresist.Against polishing silicon wafer casting and The prepolymer of solidification polydimethylsiloxane (PDMS), generates flat elastomeric substrate（～4mm is thick）.By intensive ultraviolet (240-260nm) expose 5 minutes in the ozone environment creating, just by hydrophobic PDMS surface (- CH3With H end group) convert and get married Water state (- OH and-O-Si-O end group).Under about 70-180 °C, mainly heat such activity PDMS substrate in convection furnace, Isotropism degree of thermal expansion is controlled.This element is contacted with the SOI wafer processing, then it is shelled again From just whole nanometer film being transferred to PDMS.Continuous heating several minutes in convection furnace, make it easy to be formed between film and PDMS Strong bonding combines.In a final step, nanometer film/PDMS structure is cooled to room temperature (about 25 °C), to discharge thermal initiation Prestrain (Δ L/L).This process lead to silicon nanometer film and near PDMS surface region in spontaneously form two dimension （2D）Undulation structure.These structures represent different behaviors in diverse location, account for leading in adjacent edges One Dimension Periodic ripple, Two-dimentional fishbone layout can be typically observed at interior zone, and in immediate vicinity, unordered herringbone structure often occurs. Fishbone region is characterised by：In ripple the distance between adjacent peaks we be referred to as short wavelength λ, wave amplitude A1 （Not shown in Fig. 1）, and longer distance 2 π/k2（Along x2 direction）, its " turning adjacent with herringbone structure （jog）" between separation be associated, we are called long wavelength.Other characteristic lengths are, " turning " wavelength 2 π/k1（Along x1 Direction, with long wave length direction x2Orthogonal）, turn amplitude A2, turning angle θ.The bottom field of Figure 39 schematically shows these features Part.
The each several part a-f of Figure 40, the situation being shown for following nanometer film is forming the different phase institute during fishbone ripple The light micrograph collected, described nanometer film thickness is 100nm（Lateral dimensions about 4 × 4mm2）And hot prestrain（By It is heated to 150 °C to be limited）For～3.8%.These images show that structure in two stages is formed, wherein first stage master It is related to the one-dimensional wave on a large scale, subsequently bend these wave structures finally to form compact fishbone when cooling down completely Shape layout（See Figure 40 d-f）.Figure 40 h illustrates the time-evolution of two kinds of characteristic wavelengths.The compression on silicon is led to be answered with cooling Change is gradually increased, and short wavelength tends to reduce, this is because PDMS has relatively large thermal contraction.Specifically, this value From 17-18 μm of initialization phase drop to herringbone structure become notable when～14.7 μm, eventually drop to cooling down completely Under state～12.7 μm.This wavelength is homogeneous (～5% variation) over a large area.In contrast, related to fishbone layout The long wavelength of connection shows the value of wide scope, and the image as Figure 40 g is clear to.At about 100 points traveling through this sample Measurement, produces the Distribution value outlined in the block diagram of Figure 40 g.Herringbone structure can be expressed as plane outer displacement w= A1cos[k1x1+k1A2cos(k2x2)] (Figure 49).Here is by dividing for film thickness, the mechanical property of film and substrate Analysis, determines following coefficient, i.e. wave amplitude A1, long wavelength 2 π/k2, turning wavelength 2 π/k1, and turning amplitude A2.Short wavelength λ is (2π/k1)sin(θ/2).As recorded determined by profile length and cycle from wavy texture, this model is used Si strain conduct The prestrain being applied is substituting hot prestrain（Figure 50）.The actual strain that Si deforms is made to be typically slightly less than the heat estimated pre- Plus strain, possible cause is loading effect on PDMS for the Si.For example, under 3.8% hot prestrain, silicon strain is 2.4%.Right In such displacement w, stress in Si film, strain and displacement field, all can be by Feng's 〃 toll bar flat-plate theory according to A1、k1、A2 And k2Obtain.Field in PDMS substrate is obtained by 3D elastic theory.Minimize gross energy, it is by the film energy in silicon fiml and curved Elastic energy composition in Qu Nengliang and PDMS substrate, provides A1、k1、A2And k2.The Young's moduluss of Si and PDMS and Poisson's ratio It is ESi=130GPa,νSi=0.27,EPDMS=1.8MPa, and νPDMS=0.5.The turning angle θ that test and model are given is about 90°.Under 2.4% 2 axle prestrain, it is 12.4 μm by the short wavelength that theory is given, this notional result meets above-mentioned well Result of the test.In long wavelength 2 π/k2In large variation also predicted by Theoretical Calculation, from 30 μm to 60 μm.
Figure 41 illustrates the atomic force microscope with Figure 40 shown similar structure under the complete state of cooling（AFM）With sweep Retouch ultramicroscope（SEM）Image.Illustrate to these image clearlies, fish-bone pattern is characterised by limiting two characteristic directions Zigzag structure, even if compression strain completely isotropic is also such.This herringbone structure represents minimal elastic and can tie Structure, the general plane internal stress in its reduction system, and mitigate the Biaxial Compression in both direction.Therefore, with " chessboard " and 1D Ripple layout is compared, and this geometry is preferred over a large area, because herring-bone form pattern is that in these three patterns, uniquely one kind exists All directions all relax plane stress and not leading to significantly stretch can pattern.Only closest in place of turn, just cause Significantly stretch.1D pattern only reduces prestress in one direction.Checker board pattern reduces stress in all directions, but It produces along with bending and significantly stretches energy.
Two line blocks (linecut) extracting from afm image are although showing only only proximate to sinusoidal but being in the cycle Topography (profile i) and the topography perpendicular to ripple along turn direction of property（Profile ii）.Determined by profile ii λ and A of ripple1, it is 12.8 μm and 0.66 μm respectively.The λ that theory analysis is given is 12.4 μm, similar to experimental data；However, reason A by analysis gained1It is 0.90 μm, numerically slightly above experimental data.SEM image is clearly shown in tight between film and PDMS Close combination, the behavior as the sample near the aperture among the silicon in the projection and recessed region of ripple proves.These images are also Show, these wave structures are completely uncorrelated to the position of this some holes, because 2.5 μm of hole size is much smaller than the deformation in our tests The characteristic wavelength of pattern.The geometry of wave structure is to the dependent research of silicon thickness it is provided that other is special to physics Property understanding, and further verify mechanistic model.Figure 42 illustrates some results, has difference including for similar thermal strain The light micrograph of the wave structure formed in the film of thickness, wavelength and amplitude.For 100nm thickness, λ and A of ripple1Respectively For 12.6 (± 0.37) μm and 0.64 (± 0.07) μm, and for 320nm thickness, they be respectively 45.1 (± 1.06) μm and 1.95(±0.18)μm.These values are reasonably well corresponding with calculated value, calculated value for 100nm situation be λ and A1It is respectively 12.4 μm and 0.90 μm, and for 320nm situation λ and A1It is respectively 45.1 μm and 3.29 μm.
These ruffled membranes, the strain for being on direction in various different planes provides accurate tensility, different The one-dimensional tensility being provided in previously described banding geometry.In order to study in this respect, we are using the machine of calibration Tool stage, and the stretchable film of 2D with heat induction prestrain 3.8% preparation, survey along different directions execution uniaxial elongational stretching Examination.Figure 43 provides some images.In case i, along the elongation strain (ε in long wave directionst) lead to herringbone structure " exhibition Open " (εst) 1.8%, gradually lead to be completely stretched state (εst) the wavy geometry of 1D under 3.8%.This stretch through pool Loose effect causes the compression strain in orthogonal direction, and its amplitude is substantially equal to the half of elongation strain.This compression strain can be led to Cross to the compression in the wavy texture that this side up and adjust.Once discharging applied elongation strain, initial fishbone ripple is It is resumed, to show that (Figure 51 shows and collects after 5,10 and 15 stretching circulations with initially closely similar structure Light micrograph).
The elongation strain applying in diagonal（Case ii）, similar structure change is shown, although being completely stretched When 1D wave structure along by applied strain rather than initial geometry limited direction alignment.For vertical case iii, Small strain εstUnder 1.8%, some of sample partly lose fishbone layout completely, to produce new 1D ripple along draw direction.With Strain to increase, more multizone stands this deformation, till the 1D wave component that whole region is all guided by these.These new shapes The 1D ripple becoming is perpendicular to the orientation of original ripple；Once release, they simply bend to form unordered herring-bone form geometry. For all situations shown in Figure 43 B, wavelength increases with elongation strain, is then just returned to its initial value Yi Dan lax, Even if it is also such to introduce compression stress by poisson effect in orthogonal direction.This behavior results from, by fishbone wave cxpansion institute The λ incrementss leading to, this increments is more than the reduction amount of this wavelength being led to by poisson effect.（Figure 52）For case i, due to Poisson effect, in the elongation strain ε being appliedstUnder, 2 π/k1(Figure 52 A) is reduced to 2 π/k '1（Figure 52 B）That is to say, that k '1> k1.However, due to the expansion to herringbone structure, corresponding turning angle θ ' is more than angle θ.Short wavelength λ=(2 π/k1) sin (θ/2) change For λ '=(2 π/k '1) sin (θ '/2), it can be more than λ when angle varying effect overcomes poisson effect.Our theoretical model is given Go out, for εstWhen=0,1.8 and 3.8%, λ=12.4,14.6 and 17.2 μm, it confirms that short wavelength increases with the applying of strain, As what is observed in test.For case iii, λ and 2 π/k1All increase with the elongation strain being applied, because ripple edge The direction elongation strain relaxes, and turning angle (θ) is not significantly changed by poisson effect.Come also by heat induction elongation strain The twin shaft tensility of research warp film（Figure 53）.It is heated with sample, produced by thermal strain, fishbone ripple slowly disappears； Once cooling, they recover completely.
These observed results are only applicable to the central area of film.As shown in Figure 39 bottom diagram picture, the edge of film illustrates one-dimensional Wave structure, it has the wave vector along edge orientation.Figure 44 illustrates, border district, Central District and they between The afm image of transitional region and line block profile.1D ripple in Si adjacent edges origin（Upper figure）Gradually become bended（In Figure）, until they are converted to till the fishbone geometry of middle section（Figure below）.λ value in that region is respectively 16.6th, 13.7 and 12.7 μm（From top graph）, and A1It is respectively 0.52,0.55 and 0.67 μm.Compared with the 1D ripple of edge, 2D fishbone ripple has less λ and A1, show the interior zone of Si compared with edge by stronger the affecting of compression strain.? The stress state of adjacent edges, is generally uniaxial compression in some distance ranges, because the edge of film is not towed power.This Plant uniaxial compression parallel to this free margins, and therefore lead to the 1D ripple along edge.However, stress state, leading to fishbone In the middle section of shape structure, it is changed into waiting Biaxial Compression.For the transitional region between 1D waviness and fishbone ripple, uneven The Biaxial Compression of weighing apparatus leads to " partly "-fishbone ripple with larger turning angle.λ and A that our model produces for 1D ripple1Respectively It is 16.9 and 0.83 μm, and be then 12.4 and 0.90 μm for herringbone structure.These results are with experimental observation result reasonably Well it is consistent.
In order to study these edge effects further, we manufacture rectangular membrane, and its length is 1000 μm, and width is respectively 100th, 200,500 and 1000 μm, all on same PDMS substrate.Figure 45 illustrates that these structures are pre- for two different grades of heat Plus the light micrograph of strain.In low grade fever prestrain（About 2.3%, Figure 45 A）, 100 and 200 microns of wide films show from While to the perfect 1D ripple of another side, and be flat and undeformed region in end.500 μm of wide films, illustrate similar 1D Ripple and flat site, but these ripples have the geometry of slight bending in the central authorities of structure, and totally orderly in orientation Property and uniformity are less than the situation of 100 μm and 200 μm substantially.For 1000 μm of region of 1000 μ m, 1D ripple occurs in edge Middle section, and be flat site in corner.The middle body of film illustrates the fishbone geometry of development completely.For corner Flat site, due to two free margins, so assume approximate unstress state.Ripple is not had to be formed in such adjacent corners.With Prestrain increases（4.8%, Figure 45 B）, the flat site in all cases dimensionally reduces.The wavy behavior of 1D is in 100 Hes Continue in 200 μm of bands, but clear and definite fishbone morphology occurs in the middle section of 500 μm of situations.Under higher prestrain, etc. Biaxial compressive strain is present in the interior zone of 500 μm of wide films.For 1000 μm of films of 1000 μ m, fishbone behavior extends to Connect antermarginal region.Limit the characteristic length numerical range of the spatial dimension of flat site, we are referred to as edge effect length, Ledge, valuation can be carried out as the function of film size and prestrain.Figure 45 C illustrates, for the case investigated herein, with film The unrelated mode of size, carries out the result of linear scale scaling to this length with prestrain.Become with prestrain Get Geng Gao, the length in uniaxial strain region becomes less.Therefore, in the unstressed region near two free edges, permissible Observe the 1D waveshape of short-range and similar behavior.
Figure 46 illustrates to form the light micrograph of the wavy texture of other film geometries, these shapes include circle, Ellipse, hexagon and triangle.These results with Figure 45 band and square in observed result quantitatively consistent.Tool For body, marginal area illustrates 1D ripple, and it is orientated parallel to edge.Orthogonally oriented ripple is only being more than L away from Edge Distanceedge When just occur.For circle, one-dimensional wave occurs in adjacent edges, is had and be generally radially orientated due to film shape.Fishbone Ripple occurs in central authorities.Ellipse shows similar behavior, but has flat site at major axis edge, because these regions Radius of curvature is less.For the shape of hexagon and triangle, sharp corner (being 120 ° and 60 ° respectively) leads to flat area Domain.Fishbone geometry occurs in hexagon central authorities.For prestrain degree shown here, the display of triangle central authorities occurs 1D ripple.For the shape with clear turning（For example, the tip of hexagon, triangle and ellipse）, do not have in corner vicinities Ripple, because the free edge of two intersections（Need not to be vertical）Provide unstress state.For triangle, there is no enough skies Between produce herringbone structure, even in middle section.
Film itself provides the approach realizing the stretchable electronic device of twin shaft.The edge effect described above may be utilized with reality Existing some results, it perhaps can be used for certain form of device.Specifically, in imaging systems, valuable it is, in photoelectricity The position of detector keeps flat, un-deformed area, undesirable with avoid occurring when these devices have contoured Behavior.Figure 47 illustrates to reach some representative instances of the stretchable film of this result.These structures are by (right by 150 μm of bands of 30 μ m It is 210 μm of 30 μ m in perpendicular band) connect 100 × 100 μm square islands compositions, connect (figure in the horizontal and vertical directions 47A, C), and connect up in vertical, horizontal and diagonal side（Figure 47 E, G）.The wavelength of the ripple in band and the change of amplitude, carry For a kind of mode adjusting and applying strain, thus the deformation being largely avoided in the region of square island.We are several The different behaviors applying strain these structures of lower inspection.Part a of Figure 47 and e are shown under low strain dynamic (about 2.3%) pattern Typical case, this contingency model is applied by heating sample in stove.Part c of Figure 47 is shown in relative two high axles with g Same structure under strain (about 15%), this strain is applied using mechanical phase.Obviously, in low strain dynamic pattern, island remains Flat；Under sufficiently high strain, initially form wave structure in that region.Under all strains, between PDMS and Si all Maintain good bonding, such as shown in inclination angle SEM image (Figure 47 B, D, F, H).Magnification at high multiple SEM in part b and d of Figure 47 The illustration of image also demonstrate that the strong combination of silicon and PDMS.
In a word, silicon nano thin-film can be integrally formed with prestrain elastomeric substrate, carries multiple geometries to build 2D " wavy " structure.Many aspects of these system mechanics behaviors, meet theoretical prediction behavior well.These results can use In the application of the electronic device in the system requiring complete tensility in use or during installing.
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Embodiment 4：By using printed semiconductor nano material, heterogeneous integrated three-dimensional electronic device
We have developed a kind of simple approach, by extensive for classification different materials with two dimension or three-dimensional (3D) layout It is combined in heterogeneous integrated (HGI) electronics system.This process starts from separate substrates to different semiconductor nano materials Material（For example, SWCN, and gallium nitride, silicon and arsenide gallium monocrystal nano wire/band）Synthesis.To by soft die and these Substrate is used as the application repeatedly of the additive transfer process of alms giver, and the formation of device therewith and interconnection, produces high-performance 3D-HGI electronic device, the combination in any of these (or other) semiconductor nano materials is incorporated in rigid or flexible device by it On part substrate.This general method can produce the unusual electricity being difficult or impossible to realize in a large number using other technologies Sub- device system.
Many existing and emerging electronic devices, benefit from different types of quasiconductor with two-dimentional or three-dimensional（2D or 3D）Layout monolithic Manufacturing resource（HGI）To in individual system.Example includes Multifunctional radio-frequency communication device, infrared（IR）Imaging Camera, addressable sensor array and mixed type CMOS/ nano wire/nano-device circuit（3-7）.In some representative system In, in the circuit being often introduced into stacking three dimensional structure, compound semiconductor or other materials provide high-speed cruising, efficient photoelectricity treater Detect or sensing capability, silicon CMOS provides digital read out and signal processing simultaneously.Chip combines（8）And epitaxial growth（9,10）Generation Table is used for realizing two kinds of most widely used methods of the three-dimensional HGI system of these types.Previous process is related to, by using viscous Mixture or thermal initiation surface chemistry technique, to the integrated circuit being respectively formed on different semiconductor wafers, photodiode Or sensor carries out physical bond.This approach is effective in many cases, but it have the shortcomings that important, including（i） Expand to the limited in one's ability of large area or a considerable number of layer in the 3rd (stacking) dimension,（ii）With uncommon（Such as nanometer Structural material）Or cryogenic material and substrate incompatible,（iii）It is one in manufacture and alignment to the electrical interconnection through chip to choose War,（iv）To flat plane mating surface, there is strict demand, and（v）Differential thermal expansion/contraction institute by totally different material The mechanical strain producing, can bend and fracture.Epitaxial growth provides a kind of different method, and it is related to, by molecular beam Epitaxial growth or other means, in the thin layer semi-conducting material of formation directly on a surface of other materials chip.Although the method is kept away Exempt from some foregoing problems, but the requirement being directed to epitaxial growth position has strictly limited quality and the class of the material that can be grown Type, is also such even with cushion and other advanced technologies.By contrast, the semiconductor nano material of emerging classification, such as The nano wire of inorganic material, band, film or particle, or carbon-based system, such as SWCN（SWNT）Or graphene platelet （11-14）, can grow and be then suspended in solvent or be transferred on substrate, thus that avoids that epitaxial growth or chip combine will Ask.Nearest work shows, for example, the crossing nanotube line diode being formed by solution casting (15) is integrated in 2D layout. The result that here presents shows, different single crystalline inorganic quasiconductors（Nano wire/the band of such as GaN, Si and GaAs）It is how to use Upgradeable and deterministic printing process and can combination with one another, and with other types nano material (such as SWNT) group Close, to produce complicated HGI electronics system in 2D or 3D layout.Particularly, high performance mos field effect Answer transistor（MOSFET）, metal-semiconductor field effect transistor（MESFET）, thin film transistor (TFT)（TFT）, photodiode and The ultra-thin multiple-level stack of other assemblies, be integrated in device array on rigid inorganic and flexible plastic substrate, gate and It is shown that some of them ability in active-addressed photodetector.
Figure 57 illustrates the exemplary steps for manufacturing these 3D-HGI systems.This process starts from semiconductor nano material Synthesis, every kind of material is on the source substrate of its own.The nanometer of device integrated single-crystal Si, GaN and GaAs shown herein Line and nano belt, it is shaped using following process：Source material based on chip and lithographic etching process (16-21), Yi Jiyou The SWNT network that chemical vapor deposition (13,21) grows.In the scanning electron microscopy picture at Figure 57 top, they are being served as a contrast from source After bottom removes, these semiconductor nano materials are shown.For carrying out circuit manufacture, these elements during manufacture or growth stage still It is retained in the structure being defined on chip：It is the array of alignment in the case of Si, GaN and GaAs nano wire/band, and for SWNT is subband structures random network.High temperature dopant for the Ohmic contact to Si, GaN and GaAs and annealing process, Ke Yi Execute on the substrate of source.Next step is related to, using the aforesaid printing technology based on elastomeric stamp, by these treatment elements Polyimides (PI) thin slice from source substrate transfer to device substrate, such as described in Figure 57.Specifically, against source substrate Lamination polydimethylsiloxane (PDMS) die, has been created that the soft Van der Waals adhesion for semiconductor nano material element Contact.Will be by the stamp contacts of " ink-jet " to from the teeth outwards with liquid prepolymer（For example, polyamic acid）Thin spin-coated layer Device substrate（For example, PI thin slice）, then solidify this prepolymer, so that these semi-conducting materials is embedded when die is removed should It is bonded on layer and well this layer（16-20）.Similar process is it is adaptable to multiple substrate（That is, rigidity or flexibility；Organic Or it is inorganic）And semiconductor nano material [version of of this process slightly modification is used for SWNT (21)].This place is retouched The system stated, the thickness of intermediate layer (being PI in the case) may diminish to 500nm, and typically 1-1.5 μm.Through some volumes Outer process, including forming gate-dielectric, electrode and interconnection, can repeat transfer and device fabrication steps, this step starts from The new prepolymer intermediate layer of the spun on top of the circuit layer being previously done.Be transfer or traditional masks aligner custom-designed Automatic phase, (22) (Fig61) can make overlay registration accuracy reach～1 μm on several square centimeters.By by metal On the opening that line is evaporated in the intermediate layer being limited by photo-patterns and/or dry etching and within, and simply formed layer Interconnect (23) to layer.This unusual approach for 3D-HGI electronic device has several key characters.First, device substrate Upper all of processing occurs under cryogenic, thus avoiding leading to cause undesirable deformation in multiple-level stack system Differential thermal expansion/blockage effect.This operation also allows for using cold plastics substrate and intermediate layer material, and it helps In guaranteeing underlying circuit layer not by the process thermal degradation to top device.Secondly, the method is applied to partly leading of wide class scope Body nano material, including emerging material, such as SWNT thin film.3rd, soft die allows to carry out non-breaking with underlying device layer Bad property contacts；These dies, together with ultra-thin semi-conducting material, can also tolerate the surface of slightly fluctuating.4th, ultra-thin device Part geometry（<1μm）And intermediate layer（<1.5μm）It is easily formed layer to the electrical interconnection of layer.The several circuit being described below show The feature of many shortcomings that these overcome classical pathway is described in model.
Figure 58 illustrates three layers of 3D stacked array Si MOSFET, to be manufactured above-mentioned using the general technology flow process shown in Figure 57 Array：Monocrystal silicon nano belt is contacted with doping（It is formed on the chip of source）, plasma enhanced chemical vapor deposition SiO2 Electrolyte, and Cr/Au metallising source electrode, drain and gate（24）It is used together.Each device is received using three alignment Rice band, width, thickness and length are respectively 87 μm, 290nm and 250 μm.Fig. 2A illustrates that the top view optics at the edge of system shows Micro- photo, the layout of this system is designed to individually show the part of one layer, the two layers and three layers MOSFET of support of substrate.By Two layers of device geometries carry out 90 degree of rotations with respect to ground floor and third layer, contribute to illustrating the layout of the system. Schematic cross section and the inclination angle view of stacked structure is assumed in Figure 58 B.This sample can be shown using confocal opticses under 3D Microscopy is observed.Figure 58 C illustrates top view and the inclination angle view of such image, and coloring is to observe.(quality of this image with Depth is declined slightly, and reason is scattering and the absorption on upper strata).Figure 58 D assumes the electrical measurement [top of representative device in each layer Portion gate MOS FET, has channel length (Lc) 19 μm, raceway groove crossover distance (Lo) it is defined as grid extension overdoping source The distance of pole/drain region is 5.5 μm, and 200 μm of channel width (W)].Device on each layer on this three layers, It is formed on PI substrate, represent good characteristic（Linear mobility 470 ± 30cm2/ Vs, on/off ratio>104, and threshold voltage For -0.1 ± 0.2V）, and there is no systematic divergence between the device of different layers.By repeating identical process, can additionally Layer be added to this system.In addition to the 3D circuit with single quasiconductor, as shown in figure 59, can also use in multiple layers Various different quasiconductors are to form complete 3D-HGI system.In order to this ability is described, we are using the GaN on PI substrate With Si nano belt and SWNT thin film, to manufacture MESFET array（Especially, HEMT, HEMT）、MOSFET And TFT.Figure 59 A and 59B is shown respectively optics and the confocal images of the magnification at high multiple of formed device.On the first layer Ohmic contact (Ti/Al/Mo/Au anneals on the chip of source) is used for source electrode and drain electrode, by Schottky (Ni/Au) by GaN HEMT Contact for grid.Channel length and width, and grid width, are 10,170 and 5 μm respectively.Each device is all using GaN Band（It is made up of the multiple-level stack of AlGaN/GaN/AlN）, its thickness, width and length be respectively 1.2,10 and 150 μm, by Process in device substrate and be electrically interconnected.SWNT TFT on the second layer is by SiO2/ epoxy resin is used for gate-dielectric, and Cr/Au is used for source electrode, drain and gate, and its channel length and width are respectively 50 and 200 μm.Si MOSFET uses and Figure 58 Shown in design identical design.Other various different 3D-HGI can be built using the various combination of Si, SWNT and GaN Device (Figure 61 and 62).Figure 59 C illustrates the current-voltage characteristic curve of the typical device in the system in Figure 59 A and 59B.? Under all situations, the characteristic that characteristic is all formed on the chip of source is similar:The threshold voltage (Vth) of GaNHEMT be -2.4 ± 0.2V, on/off ratio>106, mutual conductance 0.6 ± 0.5mS；SWNT TFT has Vth=-5.3 ± 1.5V, on/off ratio>105, linearly move Shifting rate 5.9 ± 2.0cm2/Vs;Si MOSFET has Vth=0.2 ± 0.3V, on-off ratio>104, and linear mobility 500 ± 30cm2/Vs.With the use to thin PI substrate (25 μm), thin device (2.4 μm) and thin PI/PU intermediate layer (5 μm), these One aspect being concerned by people of device is their mechanical flexible, and this is very heavy for the application of flexible electronic device Will.We are by the effective mutual conductance (g to the Si SWNT in the 3D-HGI system of Figure 59 A and GaN deviceeff) as crooked radian Function be estimated.Figure 59 D, it is shown for the mutual conductance (g of unbent condition0eff) be normalized and draw these number According to illustrating the stability for the little radius of curvature to 3.7mm.
These 3D-HGI devices not at the same level between formed electrical interconnection can create the circuit performance being concerned by people.Thin Polymer intermediate layer make：By by metal wire be evaporated to by the opening of lithographic definition and within it becomes possible to easily Form these interconnection.Figure 60 shows some examples.First example, shown in Figure 60 A, is 3D NMOS phase inverter（Logic Door）, wherein drive Si MOSFET (L=4 μm, W=200 μm) and load Si MOSFET (L=4 μm, W=30 μm) to occupy not at the same level. Using 5V supply voltage, well-defined transmission characteristic shown by this bilayer phase inverter, and it has～2 gains, is comparable to use The performance (25) of the conventional planar phase inverter of similar transistor.Figure 60 B illustrates that one kind has the anti-phase of Complementary Design (CMOS) Device, this Complementary Design use integrated n-channel Si MOSFET and p-channel SWNT TFT, its design in case equilibrium pull-up and under Draw the current driving ability on direction（Figure 65）.Figure 60 A presents, adopt 5V bias voltage towards VDD terminal with And from 0V sweep to 5V grid voltage (input) and collect transfer curve.Curve shape and gain（Up to～7）Quantitatively With circuit numerical simulation（Figure 65）Unanimously.As the 3rd example, we build integrated with the Si MOSFET on flexible PI substrate GaAs metal-semiconductor-metal (MSM) infrared (IR) detector (26), can be imaged in active infra-red for manufacture with showing The ability of structure cell used in device.In this example, it is transferred on the substrate of the printed array with Si nano belt MOSFET The printing nano belt of GaAs（Thickness, width and length be respectively 270nm, 100 μm and 400 μm）, form the basis of MSM.Deposition Electrode on the end of these GaAs nano belt（Ti/Au=5/70nm）Form back-to-back Schottky diode with 10 μm of intervals. Intensity with infrared illumination increases, and the detector cell being formed shows intensifying current (Figure 60 C), with circuit simulation （Figure 66）Unanimously.The response of the about 0.30A/W at 850nm wavelength is observed to 5V from 1, and does not consider from semiconductor surface The light of reflection.This system also shows the flexible with regard to the radius of curvature less than 1cm, and it can be used for senior system, all As the bending focal plane arrays (FPA) for Radix Rumiciss infrared night vision imager.
Printed semiconductor nano material provides the new way for three-dimensional HGI system, and can be in various different application fields There is important application, be not only those applications indicated by system described herein, and also other application, including： There is the micro-fluidic device of integrated reading and Sense Electronics, by unusual sensing material include traditional based on silicon The chemical/biological sensors system of electronic device, and by the optical transmitting set of compound semiconductor and silicon drive electronic device or Photon/electro-optical system that micro electromechanical structure is combined.Additionally, the compatibility of the plastic of this approach and thin and light matter can Think and create more chances using uncommon form factors or mechanical flexibility as the device of key feature.
Material and method：Device manufactures：Silicon device：Manufacture process starts from, by processing SOI wafer (SOI; Soitec unibond, 290nm top silicon layer, doping level 6.0～9.4 × 1014/cm3), limit the monocrystal silicon of contact doping Strip.First step is related to phosphorus doping, using Solid Source and rotary dopant (Filmtronic, P509), and photoetching process The SiO of the plasma enhanced chemical vapor deposition (PECVD) limiting2(Plasmatherm,300nm,900mTorr, 350sccm,2%SiH4/He,795sccm NO2, 250 °C) and as mask, to control alloy to diffuse into the position of silicon.In doping Afterwards, through the SF of the photoresist layer of patterning6Plasma etching, limits described band.With concentrating HF solution (Fisher Chemicals) buried oxide is carried out with undercutting etching, just described band is discharged from chip.This process completes contact doping list The manufacture of crystal silicon band.In the next step, by flat elastomer polydimethylsiloxane (PDMS, A:B=1:10, Sylgard184, Dow Corning) die, contact with the band coated with photoresist, then by die to being peeled back to from just Band is removed from chip, and allows described band to bond by the Van der Waals between hydrophobic PDMS and photoresist Surface to die.By since thus " ink-jet " from chipThe die of band is against 25 μm of polyimides (PI) pieces (Dupont, Kapton100E) is laminated, and described PI piece is spun on a thin layer (～1.5 μm) liquid PI precursor polyamic acid (Sigma_Aldrich Inc.).Solidify this precursor, peel off this PDMS die, and peel off photoresist, being left with band makes On the surface of its embedded PI substrate and bonding with this surface well.Gate dielectric is by one layer of SiO2（Thickness～100nm）Group Become, this SiO2Layer is deposited by PECVD under 250 °C of relative low temperature.Photoetching and CF4Plasma etching defines an access to silicon The opening of doped source/drain areas.(5/100nm carries out electron beam evaporation, Temescal FC- to Cr/Au from bottom to top 1800) source electrode, drain and gate electrode are limited by photoetching and Wet-type etching in one step.
GaN device：GaN micro structure is in GaN overall chip by heterojunction structure [AlGaN (18nm)/GaN (0.6 μm)/AlN (0.6 μm)/Si] make.Ohmic contact regions are limited by AZ5214 photoresist, then use the SiCl in RIE system4Deng from Daughter is cleaned.Then electron beam evaporation (Ti/Al/Mo) and thermal evaporation (Au), depositing Ti/Al/Mo/Au (15/60/35/ are passed through 50nm) metal level.Wash away photoresist, just stay metal to contact on GaN completely.In N2In environment, under 850 °C, heat is moved back Fire 30 seconds, forms ohmic contact regions.SiO2(Plasmatherm,300nm,900mTorr,350sccm,2%SiH4/He, 795sccm NO2, 250 °C) and Cr metal (e-beam evaporator, 150nm) layer deposited as mask material, use In subsequent inductively coupled plasma (ICP) etching.Photolithography, Wet-type etching and RIE process (50mTorr, 40sccm CF4, 100W, 14 minutes) and limit the band geometry of GaN.After removing photoresist with acetone, ICP dry ecthing (3.2mTorr, 15sccm Cl2,5sccm Ar, -100V bias voltage, 14 minutes) it is used for removing the GaN of exposure, and gently It is etched into Si (～1.5 μm), to be easy to carry out subsequent anisotropic etching micro-ly.Then, using tetramethyl oxyammonia (Aldrich, 150 °C continue 4 points 30 seconds), silicon is etched away below GaN.Sample is in BOE (6:1,NH4F:HF 30 are soaked in) Second, to remove PECVD SiO2, and the electron beam evaporation SiO in the new 50nm of the top deposition of GaN band2Layer.Subsequently, adopt From the PDMS plate of GaN band " ink-jet " of female wafer, it is laminated against PI piece, this PI piece is coated to 2 μm of polyurethanes （PU, Norland light binding agent, No.73）.Sample is exposed to ultraviolet (173 μ Wcm-2) 15 minutes, to solidify PU.By PDMS To be peeled back to from, and by BOE soak to remove electron beam SiO within 20 seconds2, lead to for GaN element to be transferred to plastic. Negative photoresist (AZ nLOF2020) is used for the Schottky contacts of Ni/Au (80/180nm) are patterned.Photic anti- Erosion agent AZ remover removes (KWIK continues 30 minutes).
SWNT device：Using chemical vapor deposition (CVD) in SiO2Single SWCN is grown on/Si chip Random network.The ferritin (Sigma Aldrich) being deposited on methanol on substrate is used as catalyst.Feed gas are methane (1900sccm CH4With 300sccm H2).Quartz ampoule in stove is washed away using the argon of high fluidity, so that before growth It is cleaned.In growth period, temperature is maintained at 900 °C and reaches 20 minutes.Described transfer or be related to similar to being previously described Printing process, or be related to slightly different method, thick Au layer and PI precursor are applied to and have in the method The SiO of described pipe2On/Si substrate.Solidification PI after, Au/PI by be peeled back to from.By this layer against painting coated with thin asphalt mixtures modified by epoxy resin The prepatterned device substrate of lipid layer (SU8,150nm) is laminated, and then PI and Au layer passes through oxygen reactive ion respectively Etching and Wet-type etching remove, and complete to transfer.When bottom gate devices, the grid electricity of this substrate supports prepatterned Pole and electrolyte.Specifically, by photoetching, the gate electrode of Cr/Au/Cr (2/10/10nm) is patterned, then, made With PECVD by the SiO of 300nm2It is deposited on substrate.Cr/Au (2/20nm) source electrode and drain electrode are directly constrained in pipe Top.
3D circuit：3D silicon NMOS phase inverter：By the identical manufacture process of repeated application, build multilayer device.Specifically, On the top of the existing layer of device, execution is directed to the spin coating of PI precursor, and silicon ribbon is transferred on top.Then adopt same Process manufacturing device.For vertical metal interconnection, by taking a picture to the opening in AZ4620 photoresist layer Patterning, limits electrode zone, then using the CF in RIE system4And O2Plasma is by the SiO in this exposure area2 Etch away with PI.300nm Al is deposited in this region, sets up contact in bottom, and by etched SiO2With PI shape Lasting electrical connection is provided in the step edge becoming.
SWNT and Si CMOS inverter：SWNT device is made up of the contact of Au (20nm) source/drain, and this contact is by photoetching It is limited in managed network.SiO2(100nm)/Si wafer substrates setting gate-dielectric and grid.It is chosen in SWNT transistor Property apply coated with photoresist（AZ5214）Afterwards, just epoxy resin (SU8,500nm) is spun on this substrate.In order to solidify Epoxy resin and to after ultraviolet exposure, be laminated against this substrate with the PDMS plate that undoped p Si carries by " ink-jet ", with Pass through slowly manually to divest afterwards to be removed, to complete transfer process.Cr/Au (5/100nm) is used as the source in silicon device Pole and the Schottky contacts of drain electrode.Al (100nm) is used for connecting SWNT and Si transistor.
The GaAs MSM IR detector integrated with Si TFT：GaAs chip（IQE Inc.,Bethlehem,PA.）By with In the back-to-back Schottky diode of generation.These bands are by having multiple epitaxially grown layers [Si- doping n-type GaAs (120nm)/half Insulation (SI)-GaAs (150nm)/AlAs (200nm)/SI-GaAs] high-quality GaAs overall chip produce.The load of N-shaped GaAs Flowing sub- concentration is 4 × 1017cm-3.The GaAs chip with photoresist mask pattern is by anisotropically in etchant (4mL H3PO4(85% weight), 52mL H2O2(30% weight), and 48mL deionized water) middle etching.Adopt with ethanol dilution（Volume Ratio 1：2）HF solution AlAs layer is etched away.Then 2nm Ti and 28nm SiO2Deposited by electron-beam evaporator.Then, quilt The PDMS die that ink-jet is carried with GaAs, is accessed the Si transistor layer applying coated with PI (1.5 μm of thickness).By PDMS to being peeled back to From, and remove Ti and SiO with BOE etchant2, just complete by transfer from GaAs to device substrate.For Schottky contacts Metal (Ti/Au=5/70nm) is deposited by electron beam evaporation.The back-to-back Schottky diode of GaAs and Si MOSFET it Between electrical connection pass through defined below：Pattern one layer of AZ4620 photoresist first, then use in RIE system CF4And O2Plasma etching penetrates opening, and then deposits the Al of 300nm.
Device property describes：Analyzing parameters of semiconductor device (Agilent, 4155C) and traditional acquisition station are all used for two The characteristic electron description of pole pipe and transistor.IR response measures under the IRLED source of wavelength 850nm.
Circuit simulation：In order to the measurement transfer curve of CMOS inverter is made comparisons with emulation, rule of thumb produce n-channel The second level PSPICE model of silicon MOSFET and p-channel SWNT TFT.The PSPICE based on acquiescence for these PSPICE models MOSFET model（MbreakN and MbreakP）And create, PSPICE MOSFET model has the parameter of extraction to adapt in figure The measurement volt-ampere curve of the Si NMOS shown in 65B and SWNT PMOS.Using back-to-back Schottky diode and silicon MOSFET It is connected in series, the PSPICE model of empirically established GaAs MSM photoelectric detector.
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Raised framework is following framework, and it enables multiple device architectures and structure and being but difficult to of being embedded with is realized Feature functionality structure mutually integrated.This framework allows the device with important ability to represent electronics, optics, mechanically and thermally The function of form.In many cases, this system design utilizes the hierarchical structure of such effect, to allow using clear and definite device Although for the sake of simplicity, hereinafter we discuss some according to major functional modes and specifically implement the results of property of grade Scheme.
Electronic system.It is that described framework is provided in the most direct application form in this field, it is conducive to design multiple Miscellaneous compatible electronic device, it is directly embedded into high performance electronic circuit display, sensing element, RF-ID label, bag Include some challenging application forms, it is benefited from and high-performance electric electronic circuit is integrated in flexible system-level architecture. Design disclosed herein is notable to expand attainable whole machinery subject range.It passes through to allow to provide in system design rank The regulation of certain architectures details has accomplished this point, this regulation can expand endurable mechanically deform scope exceed well over logical The limit of 1% normal strain, this limiting classical ground is for the device based on the Planar integration to assembly.These enforcements exemplify Specific framework, it is used for simplest system element interconnection, and it can be used to bear the high level strain of formal system （On form factor>30%, it is suitable for building bus and interconnection in the display）, and require higher machinery simultaneous for other Capacitive（Tensility）Form is prepared.These benefits also can be extended to more complicated device level assembly, as shown in Figure 31 The form factor of exemplary means GaAs MSM IR photodetector shown in.In Complex Electronic Systems Based substantially Each functional unit can be using the method integration enlightening herein in the compatible form of custom-designed machinery.
Optical module and system.Optical module, such as waveguide, can respond bending with extreme sensitivity.Methods described and System provides the new architecture for such devices, its not only can withstanding mechanical bending, and prior be available with machine Tool bends and so that functional performance is benefited.The embodiment of the technology of method disclosed herein can directly be utilized, including photonic component Advanced form, include but are not limited to, waveguide optical coupler, and the correlation form of photoswitch and limiter.In integrated knot The system-level mechanical bend of structure（By compressing or extending）, provide a kind of direct mode to realize these functions.In channels Loss be also directly related to the high bending radius of bending of waveguide, from core to shell pattern, leakage promoted with controlled manner. Such effect can be directly applied in multiple devices.For example, Figure 67 schematically shows a kind of waveguide array, and it passes through to part The microscopic optical structure adhering to deformable substrate carries out controlled warp and manufactures.Figure 67 A illustrates, by for example by contact print And by assembly 330（For example, waveguide, the such as micro structure of optical fiber or other elongations）It is attached to substrate 30, to manufacture optics. This attachment includes combining by force contact area 310 and the weak binding contact area 320 corresponding to elevated regions.Once deformation, the Two electrodes are warp, and the weak binding region of waveguide is from substrate physical separation, thus producing elevated regions.This device can letter Singlely run as waveguide, and can have significant (5 to 50%) tensility（See Figure 67 B）.Alternatively, ripple can be selected Lead the index of refractive index with substrate and warp geometry, so that device runs as optical switch, thus allowing light Under elongated condition（Figure 67 B）Pass through, and do not allow light under shortening state（Figure 67 A）Pass through, reason is in warp waveguide In high curvature.
Mechanical function system.Common factor between mechanical devices and electronic device is the base of several key technology types Plinth inertia and other forms force transducer, including both meeting immediate interests and the specific embodiment with extensive use. Method disclosed herein and system provide a kind of approach of the new model manufacturing such devices.Figure 68 is the exemplary of mechanical system Embodiment, is specifically used for the winding multi-layer framework of capacitive couplings sensing.This exemplary architecture directly allows important shape What the power related transducer of formula was of greatest concern is inertia and pressure measxurement.In all cases, method disclosed herein and be System provides a kind of relatively straightforward mode to control the system-level aspect of the many of the performance of these devices of greatest concern It is that region and the dynamic range of optimum sensitivity allows to integrate them into the system of compact novel form factor simultaneously （For example, by allowing integrated-optic device system in a new way）.These structures supplement existing based on MEMS for such The method of device.Referring to Figure 68, mechanical devices 400（For example：Accelerometer/pressure transducer）By being partly attached to deformable The controlled warp of the electric conductivity micro structure of substrate 30 and manufacture.This device architectures passes through monitoring in bottom electrode 450 and another electricity The change of the electric capacity between pole 440 and operate, described electric capacity change occur electrode 440 elevated regions 320 pass through in z-axis The acceleration in direction or pressure and with respect to during substrate displacement.Device 400 is manufactured by following process, i.e. on the substrate 30 Prepare electrode (bottom electrode 450), then another electrode 440 is attached by contact print.This attachment includes strong combination Contact area 310 and weak binding region（That is, in the region 320 of lower section）.Once deformation, second electrode 440 tilts, and weak Calmodulin binding domain CaM and substrate physical separation, thus produce the region 320 of projection.
Hot functional device.Bulge-structure provided by the present invention, leads to new ability, to prepare to complex electronics group Part is thermally isolated.A kind of clear and definite device classification provides the conventional design of the pixel element to long wavelength imaging system, and it needs The high-performance electric sub-component providing control, reading, data processing and other functions for system is carried out integrated, simultaneously for heat Response（And it is directed to this embodiment）Two terminal parts provide and be directly integrated and accurately adiabatic.Enlightened using the present invention Method, can realize the framework of this high request easily.In present case, can will be all for functional electronic building brick AD converter as required for read pixel is extremely close to infrared response element and places（Suitable embodiment include but not It is only limitted to be supported on Si3N4Si on film and thin-film multilayer photoresist metal-oxide）, this feature makes it can either simplify Design again being capable of to strengthen performance.Of greatest concern, system described herein and device provide and are integrated in such devices element On-plane surface focuses on the ability in array.Figure 69 illustrates thermal device 500 (micro-bolometer), variable by making partly to be attached to The adiabatic micro structure of shape substrate carries out controlled tilting and makes.Device 500 is resistance to by being comprised from contact print to substrate 30 attachment The electrode 550 of hot material 560 and produce.This attachment includes the contact area 310 combining by force and corresponds to the weak of elevated regions 320 Calmodulin binding domain CaM.Once deformation, electrode 550 just tilts, and weak binding region is from substrate physical separation, thus producing elevated regions 320, it is thermally isolated with described substrate to a great extent, thus providing accurate local temperature sensing.
U.S. Patent application No.11/115,954,11/145,574,11/145,542,60/863,248,11/465, 317th, 11/423,287,11/423,192 and 11/421,654 all with not afoul degree and quilt with present disclosure Quote and include.
All lists of references in this application, such as patent documentation, the patent documentation including submission or authorizing or equivalence Thing;Patent Application Publication;With the file of non-patent literature or the material in other sources；Now all include this to quote mode Place, as individually included with quoting mode, each list of references being included at least partially not with disclosure herein Content phase is conflicted（For example, partly inconsistent list of references, the inconsistent part of this list of references is foreclosed, to quote Mode is included）.
Term used herein and expression way are used as descriptive and nonrestrictive term, and to such term and table The use reaching mode is also not intended to exclude any equivalent of shown and described feature or part thereof, however, it should be understood that Can various modifications may be made in the possible scope of the present invention.Although it will thus be appreciated that the present invention is by preferred embodiment Specifically disclose, but exemplary and optional feature, the modifications and variations to concept disclosed herein, all can be by this Skilled person appeals to application, and this adjustment and change are considered as that the claim as appended defines in the present invention In the range of.Specific embodiments are the examples of the useful embodiment of the present invention provided herein, for people in the art Member for it is readily apparent that be usable in the device described in description of the invention, apparatus assembly, method and step various not With variants implementing the present invention.It is obvious to the skilled person that be applied to this method method and Device can comprise substantial amounts of optional assembly, the key element processing and step.
It is described herein or every kind of statement of assembly of illustration or combination, can be used to implement the present invention, unless otherwise saying Bright.
No matter when, as long as providing particular range in description, for example, temperature range, time range or assembly or concentration Scope, then all intermediate ranges and subrange, and all independent value comprising in this range, all mean including in open Rong Zhong.It should be understood that any subrange in the scope including in the description or subrange or independent value, all can from there Exclude in claim.
The all patents referring in this manual and disclosure all indicate those skilled in the art according to the present invention Technical merit.List of references cited herein is all included herein to quote mode, to illustrate in its disclosure or submitting day The state-of-art during phase, and mean that this information can use herein if needed, to exclude the spy belonging to prior art Determine embodiment.For example, when the composition of claimed material it should be appreciated that before applicant makes invention, this area has been Know and existing compound, including cited instructive in list of references disclosed in compound, be all not meant to be and be included in Herein among the composition of material required for protection.
As used herein, "comprising" and " inclusion ", " containing " or " it is characterized in that " be synonymous, and be pardon or open Put formula, and be not excluded for extra, the key element do not stated or method and step.As used herein, " Consists of " exclusion is being wanted Unspecified any key element, step or component in the key element asked.As used herein, " substantially by ... form " is not precluded from not Substantially affect material or the step of the basic of this claim and novel feature.At each occurrence, " the bag of term herein Include ", " substantially by ... form " and " by ... form " any one of, may be by any one replacement in other two terms. The present invention described herein, is suitable for realizing in the case of lacking the not specifically disclosed any key element of here, limiting.
Those skilled in the art will be appreciated that, in the case of being not result in inappropriate test, in the practice of the invention The startup material in addition to the content of clear and definite example, biomaterial, reagent, synthetic method, purification process can also be adopted, divide Analysis method, assay method and biological method.Such material and method, in any functional equivalents known in the field, are all anticipated For being included in the invention.The term having adopted and expression way are all used as descriptive and nonrestrictive term, also not Mean to exclude the equivalent of shown and described feature or part thereof using such term and expression way, but should Recognize, various modifications can be carried out within the scope of the invention.Although it is, therefore, to be understood that the present invention is by preferably real Apply scheme and optional feature specifically discloses, but the modifications and variations to concept disclosed herein still can be by people in the art Member appeals to use, and such adjustment and change are considered in the range of the present invention defines as claims.
Table 1：Extract from（From experiment and calculating）The parameter of the warp shown in Figure 31 A.The width of active region is assumed in this calculating Degree (that is, being 10 μm for the sample shown in figure) is identical before and after stretching.
Table 2：Extract from（From experiment and calculating）The parameter of the warp shown in Figure 31 D.

Claims (24)

1. a kind of two-dimensional device array, including：
There is the flexible substrate of stayed surface；
It is supported at least one apparatus assembly on described stayed surface；And
At least two stretchable interconnection, described at least two stretchable interconnection in each interconnection have first end, the second end and Middle body between described first end and the second end,
Wherein said at least two stretchable interconnection are along at least two different directions in the plane positioned at described stayed surface Described at least one apparatus assembly extend, to form two-dimensional array,
The first end of each interconnection in wherein said at least two stretchable interconnection is electrically connected with least one apparatus assembly described It is logical,
The middle body of each interconnection in wherein said at least two stretchable interconnection includes at least two warp architecture regions And at least one contact between described at least two warp architecture regions,
Wherein each warp architecture region has non-linear configurations, and does not connect with the stayed surface physics of described flexible substrate Touch；And
Each contact at least one contact wherein said and the stayed surface physical connection of described flexible substrate.
2. the two-dimensional device array of claim 1, wherein each warp architecture region is curved surface.
3. the two-dimensional device array of claim 1, at least one contact wherein said is incorporated into the stayed surface of described substrate.
4. the two-dimensional device array of claim 1, at least one apparatus assembly wherein said is included selected from following one kind or many Plant material：Metal, quasiconductor, insulator, piezoelectric, ferroelectric material, magnetostriction materials, electrostriction material, superconductor, Ferromagnetic material and thermoelectric material.
5. the two-dimensional device array of claim 1, at least one apparatus assembly wherein said is selected from the group of following device composition： Photoelectric device, nano-electromechanical device, micro-fluidic device and thermal device.
6. the two-dimensional device array of claim 5, wherein said at least two stretchable interconnection are adjustable apparatus assemblies, described Each apparatus assembly in adjustable apparatus assembly have with by described at least two warp architecture regions provide described in The degree of the strain of centre part and at least electrical characteristics, light characteristic or the mechanical property that optionally change.
7. the two-dimensional device array of claim 1, wherein said at least two stretchable interconnection are multiple stretchable interconnection, wherein The plurality of stretchable interconnection at least one of interconnection include with described in described stayed surface physical connection at least one touch Point and three or more the warp architecture regions extending from this at least one contact.
8. the two-dimensional device array of claim 1, each interconnection in wherein said at least two stretchable interconnection also includes one Individual or multiple touch pads, one or more of touch pads and described first end, described second end or described first end and the second end two Person makes electrical contact with.
9. the two-dimensional device array of claim 8, at least one apparatus assembly wherein said and one or more of touch pad electricity Contact.
10. the two-dimensional device array of claim 1, each interconnection in wherein said at least two stretchable interconnection has spiral Construction, crease structure, warp construction and/or wavy texture.
The two-dimensional device array of 11. claim 1, each the warp architecture area in wherein said at least two warp architecture regions Domain includes fold domain, elevated regions, recessed region or its combination in any.
The two-dimensional device array of 12. claim 1, wherein said flexible substrate includes elastomeric material.
The two-dimensional device array of 13. claim 1, at least one apparatus assembly wherein said is multiple apparatus assembly, and its Described at least two stretchable interconnection be multiple stretchable interconnection.
The two-dimensional device array of 14. claim 13, wherein said two-dimensional device array has lattice structure, flower-like structure, bridge Shape structure or its combination in any.
The two-dimensional device array of 15. claim 13, one or more of wherein said multiple apparatus assemblies apparatus assembly leads to Cross the plurality of stretchable interconnection and be connected to adjacent apparatus assembly.
The two-dimensional device array of 16. claim 15, at least one of wherein said multiple stretchable interconnection interconnection edge and institute State the different direction of another interconnection in multiple stretchable interconnection to be orientated.
The two-dimensional device array of 17. claim 13, at least a portion of wherein said two-dimensional device array includes the plurality of In two or more interconnection being parallel to each other alignd in one direction in stretchable interconnection or the plurality of stretchable interconnection Two or more interconnection along two or more different directions orientation.
The two-dimensional device array of 18. claim 13, wherein said two-dimensional device array includes two or more device layers, and And wherein each device layer includes multiple described apparatus assemblies and multiple described stretchable interconnection.
The two-dimensional device array of 19. claim 13, at least a portion of the stayed surface of wherein said flexible substrate is curved surface , concave surface, convex surface or hemispherical.
The two-dimensional device array of 20. claim 13, wherein said two-dimensional device array includes one or more of following：Light Electric explorer, photodiode array, display, sensor array, LED display, semiconductor laser array, optical imagery System, Large area electronics, transistor array, logic gate array, microprocessor, integrated circuit or its combination in any.
The two-dimensional device array of 21. claim 13, wherein said two-dimensional device array has flower-like structure, wherein said at least Two stretchable interconnection are multiple stretchable interconnection, and at least one of wherein said multiple stretchable interconnection interconnection includes：
At least one contact with described stayed surface physical connection：With
Three or more the warp architecture regions extending from least one contact described.
The two-dimensional device array of 22. claim 1, at least one apparatus assembly wherein said is selected from following device composition Group：Electronic device, optics and mechanical devices.
The two-dimensional device array of 23. claim 13, wherein said two-dimensional device array includes one or more of following：Send out Optical device or photoelectric device.
The two-dimensional device array of 24. claim 1, at least one apparatus assembly wherein said is micro electro mechanical device.
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