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Hsieh et al., 2011 - Google Patents

Effect of N2O plasma treatment on the improvement of instability under light illumination for InGaZnO thin-film transistors

Hsieh et al., 2011

Document ID
3172269048324650085
Author
Hsieh T
Chang T
Chen T
Tsai M
Lu W
Chen S
Jian F
Lin C
Publication year
Publication venue
Thin Solid Films

External Links

Snippet

This paper investigates the impact of N2O plasma treatment on the light-induced instability of InGaZnO thin film transistors with a SiO2 passivation layer deposited by plasma- enhanced-chemical-vapor-deposition (PECVD). For the untreated device, because the …
Continue reading at www.sciencedirect.com (other versions)

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