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Cai et al., 2013 - Google Patents

High-performance transparent AZO TFTs fabricated on glass substrate

Cai et al., 2013

Document ID
2270656578303575152
Author
Cai J
Han D
Geng Y
Wang W
Wang L
Zhang S
Wang Y
Publication year
Publication venue
IEEE transactions on electron devices

External Links

Snippet

High-performance transparent low-temperature top-gate type aluminum doped zinc oxide (AZO) thin-film transistors (TFTs)(W/L=100 or 10 μ\rmm) are successfully fabricated on glass substrate. All the process temperature is below 100 ^∘\rmC. For V_G=-2 to 5 V, the TFTs …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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