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Zhan et al., 2013 - Google Patents

Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors

Zhan et al., 2013

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Document ID
11599034546610090612
Author
Zhan R
Dong C
Liu P
Shieh H
Publication year
Publication venue
Microelectronics Reliability

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The electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change …
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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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    • H01L29/66742—Thin film unipolar transistors
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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