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Huang et al., 2013 - Google Patents

Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer

Huang et al., 2013

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Document ID
5390933901790071945
Author
Huang S
Chang T
Chen M
Chen T
Jian F
Chen Y
Huang H
Gan D
Publication year
Publication venue
Surface and Coatings Technology

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This work presents the light–color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with Al 2 O 3 passivation layer. The colors of incident photon are varied from red to blue, that incident …
Continue reading at ir.lib.nycu.edu.tw (PDF) (other versions)

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