Numerical simulation of plasma waves in a quasi-2D electron gas based on the Boltzmann transport equation
The calculation of plasma waves in a homogeneous quasi-2D electron gas is usually based on the Euler equation. It yields a dispersion relation with two branches, which are often referred to as Vlasov modes. Dyakonov and Shur were able to show that under ...
Electron transport through 8-oxoG: NEGF/DFT study
We present a first-principles study of the conductance of Guanine and 8-Oxoguanine (8-oxoG) attached to Au(111) electrodes. Cellular levels of 8-oxoG have been found in larger concentrations in cancer patients. The current through the structure was ...
Influence of oblique magnetic field on the impact ionization rate of charge carriers in semiconductors
In this paper, an analytical model has been presented to study the influence of magnetic field on the impact ionization rate of charge carriers in semiconductors. The magnetic field is supposed to be applied along the oblique direction with respect to ...
An improved model for the $${I{-}V}$$I-V characteristics of submicron SiC MESFETs by evaluating the potential distribution inside the channel
This paper presents a detailed mathematical model describing the $$I{-}V$$I-V characteristics of submicron SiC MESFETs. Poisson's equation with appropriate boundary conditions has been solved to determine the potential distribution inside the channel. ...
Lattice dynamics and thermodynamic properties of alkaline-earth metal carbides XC ($$\hbox {X}=\hbox {Ca}$$X=Ca, Sr and Ba) in the rocksalt structure: a first-principles study
Using the plane wave pseudopotential approach to density functional theory within the generalized gradient and local density approximations, we investigated the structural, electronic, magnetic, lattice-dynamics, and thermodynamic properties of rocksalt ...
Electronic structure, optical and thermoelectric properties of half-Heusler ZrIrX(X $$=$$= As, Sb, Bi): a first principles study
The electronic structure, optical and thermoelectric properties of half-Heusler ZrIrX (X $$=$$= As, Sb, Bi) compounds were investigated under pressure by using the modified Becke and Johnson exchange potential. The band gaps of ZrIrAs and ZrIrBi ...
Investigation of electronic structure and half-metallic ferromagnetic behavior with large half-metallic gap in $$\hbox {Sr}_{1-x}\hbox {V}_{x}\hbox {O}$$Sr1-xVxO
In this study, we investigate the electronic structure and magnetic properties of V-doped rock-salt SrO as a $$\hbox {Sr}_{1-x}\hbox {V}_{x}\hbox {O}$$Sr1-xVxO ternary compound at concentration $$x = 0.25$$x=0.25 by the use of first-principle ...
A systematic method for simulating total ionizing dose effects using the finite elements method
Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys ...
Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor
An analytical model of dielectric-modulated junctionless gate-stack surrounding gate MOSFET for application as a biosensor is presented. An expression for the channel-center potential is obtained by solving the 2-D Poisson's equation using a parabolic-...
Tunable electronic properties of multilayer phosphorene and its nanoribbons
We study the effects of a vertical electric field on the electronic band structure and transport in multilayer phosphorene and its nanoribbons. In phosphorene, at a critical value of the vertical electric field ($$E_\mathrm{c}$$Ec), the band gap closes ...
Size effect in graphene nano-islands: A Monte Carlo study
We study the magnetic properties of nanometer-sized graphene structures with of triangular graphene nano-islands using Monte Carlo simulation (MC). The transition temperature of graphene nano-islands formed by two triangular interpenetrating sublattices,...
Modeling and simulation of carbon nanotube-based dual-gated enzyme field effect transistor for acetylcholine detection
A model for carbon nanotube-based dual-gated enzyme field effect transistor is presented for detection of acetylcholine (ACh). Modeling is done using the enzymatic reactions of the enzyme acetylcholine esterase (AChE) on ACh substrate, diffusion ...
Modeling and performance analysis of Schottky barrier carbon nanotube field effect transistor SB-CNTFET
The performance of a Schottky barrier carbon nanotube field effect transistor (SB-CNTFET) has been analyzed by means of a compact model. We present a study of the physical and geometrical parameters and their effects on the static and dynamic ...
Inversion of rectification characteristics modulated by ribbon widths in armchair graphene/h-BN nano-ribbon hetero-junctions with different interface types
The hetero-junctions composed of armchair graphene and hexagonal boron nitride (graphene/h-BN) hybridized nano-ribbons are constructed, and their current rectification characteristics are investigated by using the density functional theory in ...
Accuracy improvement with reliable statistical-based models for CNT-FET applications
In this work, different statistical-based algorithms for modeling of carbon nanotube (CNT) field-effect transistors (FETs) are analyzed and implemented. CNT-FETs have complicated structures; thus simulating their models requires significant ...
A technique to incorporate both tensile and compressive channel stress in Ge FinFET architecture
In this work, a germanium (Ge) fin-shaped field-effect transistor (FinFET) with silicon---germanium (SiGe) embedded source/drain architecture has been studied and the role of SiGe stressor material volume on induced channel stress has been investigated ...
3-D analytical modeling of high-k gate stack dual-material tri-gate strained silicon-on-nothing MOSFET with dual-material bottom gate for suppressing short channel effects
This paper presents a detailed study of the response of a new structure namely, high-k gate stack dual-material tri-gate strained silicon-on-nothing MOSFET with dual material bottom gate, towards various short channel effects, namely, drain-induced ...
A novel recessed gate MESFET by embedded dielectric packet
In this paper, a novel recessed gate MESFET transistor is presented by amending the depletion region. The main idea in this work is to improve the breakdown voltage and high frequency characteristics by altering the depletion region in the channel. The ...
Compact 2D threshold voltage modeling and performance analysis of ternary metal alloy work-function-engineered double-gate MOSFET
The present work aims to ameliorate the recently popular innovative gate engineering concept of continuously varying the mole fraction in a binary metal alloy gate electrode along the horizontal direction and realize a ternary metal alloy gate ...
2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET
A two-dimensional analytical model for the surface potential and threshold voltage of a dual work function Schottky barrier (SB) MOSFET is presented. The developed model considers the effects of the varying gate metal work function, gate and drain ...
New technique to extend the vertical depletion region at SOI-LDMOSFETs
In order to obtain an excellent performance for silicon-on-insulator lateral double-diffused MOSFET (SOI-LDMOSFET) transistors, we introduce a new technique to extend the depletion region along the vertical direction in the drift region. The proposed ...
Performance analysis of InAs- and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers
This study compares the performance of radio frequency (RF) mixers employing independent-gate tunnel field-effect transistors (IG TFETs) based on homo (InAs) and heterojunctions (GaSb-InAs). A RF mixer circuit using double gate TFET of 20 nm is designed ...
A novel electrostatically doped ferroelectric Schottky barrier tunnel FET: process resilient design
This work investigates a process-variation resilient electrostatically-doped ferroelectric Schottky-barrier tunnel FET (ED-FE-SB-TFET) based on negative capacitance (NC). The key attributes of ED-FE-SB-TFET are perovskite ferroelectric (FE) gate stack-...
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
The onset behavior of output characteristics in tunnel field-effect transistors (TFETs) importantly determines the performance of digital TFET-based circuits. In this paper, we analytically and numerically examine the dependence of the onset behavior of ...
A compact analytical model of binary metal alloy silicon-on-nothing (BMASON) tunnel FET with interface trapped charges
Tunneling field effect transistors (TFETs) are playing a pivotal role in the unhindered progress of microelectronics industry into sub-micron and nanometer regime by efficiently replacing conventional MOSFETs by dint of their superior performance at ...
Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance
Achieving steeper subthreshold slope and high ON---OFF current ratio ($$I_{\mathrm{ON}}/I_{\mathrm{OFF}}$$ION/IOFF) is essential for use of semiconductor devices in switching applications. It is well known that tunnel field-effect transistors face ...
Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high $$\kappa $$ź dielectric material in electrically doped TFET: proposal and optimization
This article proposes a novel device structure of electrically doped tunnel FET with drain/gate work function engineering by using hetero-dielectric material for the suppression of ambipolar behavior with improved DC and RF characteristics. For this, a ...
$$\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications
This paper reports the impact of barrier thickness $$T_{\mathrm{B}}$$TB and gate length $$L_{\mathrm{g}}$$Lg on the parameters of InAs quantum-well double-gate (DG) high-electron-mobility transistors (HEMTs) or DG-HEMT devices. It is shown that at drain-...
Design and simulation of high breakdown voltage AlGaN/GaN HEMTs with a charged passivation layer for microwave power applications
A novel high breakdown voltage AlGaN/GaN high electron mobility transistor with a charged passivation layer (CPL-HEMT) is proposed. The electrons in the channel are depleted by the negative charges in the passivation layer. The electric field ...
Design of high performance normally-off dual junction gate AlGaN/GaN heterostructure field effect transistors for high voltage application
In this paper, a novel normally-off dual junction gate AlGaN/GaN heterostructure field effect transistor (DJG-HFET) is proposed for reducing on-resistance, decreasing the subthreshold swing, enhancing threshold voltage and improving the breakdown ...