Modeling and performance analysis of Schottky barrier carbon nanotube field effect transistor SB-CNTFET
Pages 593 - 600
Abstract
The performance of a Schottky barrier carbon nanotube field effect transistor (SB-CNTFET) has been analyzed by means of a compact model. We present a study of the physical and geometrical parameters and their effects on the static and dynamic performance of the SB-CNTFET. For the static regime, we determine the variations in the current---voltage characteristics for three values of the potential barrier and the influence of the barrier on the on-state current. Also, we report the effect of the oxide thickness on the static performance. The relationship between the current---voltage characteristics and the nanotube diameter for different values of drain---source voltage is investigated. For dynamic systems, we study the effect of the gate---source voltage, the chirality and the CNT diameter on the transition frequency. It has been observed that the performance of the SB-CNTFET can be significantly controlled by changing some physical and geometrical parameters of the device.
References
[1]
Dürkop, T., Kim, B.M., Fuhrer, M.S.: Properties and applications of high-mobility semiconducting nanotubes. J. Phys. Condens. Matter 16(18), R553 (2004)
[2]
Kim, B.M., Brintlinger, T., Cobas, E., Zheng, H., Fuhrer, M.S., Yu, Z., Droopad, R., Ramdani, J., Eisenbeiser, K.: High-performance carbon nanotube transistors on SrTiO$$_3$$3/Si substrates. Appl. Phys. Lett. 84(11), 1946 (2004)
[3]
Javey, A., Guo, J., Paulsson, M., Wang, Q., Mann, D., Lundstrom, M., Dai, H.: High-field quasiballistic transport in short carbon nanotubes. Phys. Rev. Lett. 92(10), 106804 (2004)
[4]
Appenzeller, J., Lin, Y., Knoch, J., Avouris, P.: Band-to-band tunneling in carbon nanotube field-effect transistors. Phys. Rev. Lett 93(19), 196805 (2004)
[5]
Morita, T., Singh, V., Oku, S., Nagamatsu, S., Takashima, W., Hayase, S., Kaneto, K.: Ambipolar transport in bilayer organic field-effect transistor based on poly(3-hexylthiophene) and fullerene derivatives. Jpn. J. Appl. Phys. 49, 041601 (2010)
[6]
Appenzeller, J., Knoch, J., Derycke, V., Martel, R., Wind, S., Avouris, P.: Field-modulated carrier transport in carbon nanotube transistors. Phys. Rev. Lett. 89(12), 126801 (2002)
[7]
Javey, A., Guo, J., Wang, Q., Lundstrom, M., Dai, H.: Ballistic carbon nanotube field-effect transistors. Nature 424(6949), 654---657 (2003)
[8]
Appenzeller, J., Knoch, J., Radosavljevic, M., Avouris, P.: Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors. Phys. Rev. Lett 92(22), 226802 (2004)
[9]
Radosavljevic, M., Heinze, S., Tersoff, J., Avouris, P.: Drain voltage scaling in carbon nanotube transistors. Appl. Phys. Lett. 83(12), 2435 (2003)
[10]
Javey, A., Guo, J., Farmer, D., Wang, Q., Yenilmez, E., Gordon, R., Lundstrom, M., Dai, H.: Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays. Nano Lett. 4(7), 1319---1322 (2004)
[11]
Chen, J., Clinke, C., Afzali, A., Avouris, P.: Air-stable chemical doping of carbon nanotube transistors. In: Proceeding on Device Research Conference, pp. 137---138 (2004)
[12]
Javey, A., Tu, R., Farmer, D.B., Guo, J., Gordon, R.G., Dai, H.: High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Lett. 5(2), 345---348 (2005)
[13]
Raychowdhury, A., Keshavarzi, A., Kurtin, J., De, V., Roy, K.: Carbon nanotube field-effect transistors for high-performance digital circuits--DC analysis and modeling toward optimum transistor structure. IEEE Trans. Electron Devices. 53(11), 2711---2717 (2006)
[14]
Bhargava, K., Singh, V.: Electrical characterization and parameter extraction of organic thin film transistors using two dimensional numerical simulations. J. Comput. Electron. 13, 585---592 (2014)
[15]
Radosavljevic, M., Heinze, S., Tersoff, J., Avouris, P.: Drain voltage scaling in carbon nanotube transistors. Appl. Phys. Lett. 83, 2435 (2003)
[16]
Kordrostami, Z., Sheikhi, M.H.: Fundamental Physical Aspects of Carbon Nanotube Transistors. INTECH Open Access Publisher, Rijeka, Croatia (2010)
[17]
Wang, W., Yang, X., Li, N., Xiao, G., Jiang, S., Xia, C., Wang, Y.: Transport study of gate and channel engineering on the surrounding-gate CNTFETs based on NEGF quantum theory. J. Comput. Electron. 13, 192---197 (2014)
[18]
Kordrostami, Z., Hassaninia, I., Sheikhi, M.H. : Unipolar Schottky-Ohmic carbon nanotube field effect transistor. In: 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. IEEE (2008)
[19]
Guo, J., Datta, S., Lundstrom, M.: A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors. IEEE Trans. Electron Dev. 51, 172---177 (2004)
[20]
Subhajit, D., Debaprasad, D., Rahaman, H.: Design of 9-transistor content addressable memory cells using Schottky-barrier carbon nanotube field effect transistors. In: IEEE 2016 International Conference on Microelectronics, Computing and Communications (MicroCom), pp. 23---25. Durgapur, India (2016)
[21]
Geetha, P., WahidaBanu, R.S.D.: A compact modelling of double-walled gate wrap around carbon nanotube array field effect transistors. J. Comput. Electron. 13, 900---916 (2014)
[22]
Guo, J., Lundstrom, M.: Device Simulation of SWNT-FETs. Carbon Nanotube Electronics. Springer, New York (2009)
[23]
Appenzeller, J., Lin, Y.M., Knoch, J., Chen, Z., Avouris, P.: Comparing carbon nanotube transistors--the ideal choice: a novel tunneling device design. IEEE Trans. Electron Dev. 52(12), 2568---2576 (2005)
[24]
Colinge, J.P.: Silicon-on-Insulator Technology: Materials to VLSI. Kluwer Academic, Norwell, MA (1991)
[25]
Knoch, J., Zhang, M., Mantl, S., Appenzeller, J.: On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs. IEEE Trans. Electron Dev. 53(7), 1669---1674 (2006)
[26]
Diabi, A., Hocini, A.: Compact modeling of the performance of SB-CNTFET as a function of geometrical and physical parameters. Acta Phys. Pol. A 127(4), 1124---1127 (2015)
[27]
Najari, M., Frégonèse, S., Maneux, C., Mnif, H., Masmoudi, N., Zimmer, T.: Schottky barrier carbon nanotube transistor: compact modeling, scaling study, and circuit design applications. IEEE Trans. Electron Dev. 58(1), 195---205 (2011)
[28]
Hasan, S., Salahuddin, S., Vaidyanathan, M., Alam, M.A.: High-frequency performance projections for ballistic carbon-nanotube transistors. IEEE Trans. Nanotechnol. Nanotechnol. 5(1), 14---22 (2006)
[29]
Ferry, D., Stephen, K., Goodnick, M., Bird, J.: Transport in Nanostructures. Cambridge University Press, Cambridge (2009)
[30]
Datta, S.: Electronic Transport in Mesoscopic Systems. Cambridge University Press, Cambridge (1997)
[31]
Sze, S.: Physics of Semiconductor Devices. Wiley, Hoboken (2007)
[32]
Shirazi, S.G., Mirzakuchki, S.: Dependence of carbon nanotube field effect transistors performance on doping level of channel at different diameters: on/off current ratio. Appl. Phys. Lett. 99(26), 263104---263104 (2011)
[33]
Maneux, C., Fregonese, S., Zimmer, T., Retailleau, S., Nguyen, H.N., Querlioz, D., Bournel, A., Dollfus, P., Triozon, F., Niquet, Y.M., Roche, S.: Schottky barrier carbon nanotube transistor: compact modeling, scaling study, and circuit design applications. Solid-State Electron. 89, 26---67 (2013)
[34]
Yu, W.J., Kim, U.J., Kang, B.R., Lee, I.H., Lee, E., Lee, Y.H.: Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors. Nano Lett. 9, 1401---1405 (2009)
- Modeling and performance analysis of Schottky barrier carbon nanotube field effect transistor SB-CNTFET
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Published: 01 September 2017
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