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John D. Cressler
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- affiliation: Georgia Institute of Technology, Atlanta, USA
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2020 – today
- 2024
- [j20]Ata S. Nazhad
, Amirreza Alizadeh
5-GHz Injection-Locked Delay Cell With 10-25 ns Adjustable Group Delay in SiGe BiCMOS. IEEE Trans. Circuits Syst. II Express Briefs 71(3): 1042-1046 (2024) - [c47]Harrison P. Lee, Delgermaa Nergui, Jeffrey W. Teng
Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic Temperatures. IRPS 2024: 1-4 - [c46]Delgermaa Nergui, M. Hosseinzadeh
The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs. IRPS 2024: 1-5 - 2023
- [j19]Ickhyun Song
Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking. Sensors 23(15): 6745 (2023) - [c45]Harrison P. Lee, Nelson Sepúlveda-Ramos, Jeffrey W. Teng
The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs. BCICTS 2023: 253-256 - [c44]Jackson P. Moody
The Impact of BEOL Stress on SiGe HBTs at Cryogenic Temperatures. BCICTS 2023: 270-273 - [c43]John D. Cressler:
The SiGe HBT at Cryogenic Temperatures: Invited Pager. BCICTS 2023: 274-279 - 2022
- [j18]Clifford D. Y. Cheon
Design Methodology for a Wideband, Low Insertion Loss, Digital Step Attenuator in SiGe BiCMOS Technology. IEEE Trans. Circuits Syst. II Express Briefs 69(3): 744-748 (2022) - [c42]Ata S. Nazhad, Amirreza Alizadeh, Milad Frounchi, John D. Cressler, Bertan Bakkaloglu, Sayfe Kiaei:
A 5-GHz Injection-Locked Delay Cell with 10-25 ns Adjustable Group-Delay in a 130-nm SiGe BiCMOS Technology. BCICTS 2022: 41-44 - [c41]Nelson Sepúlveda-Ramos, Jeffrey W. Teng
Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal Layers. BCICTS 2022: 62-65 - [c40]Harrison Lee, Arya Moradinia, Jeffrey W. Teng
Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells. BCICTS 2022: 66-69 - [c39]Arya Moradinia, Clifford D. Y. Cheon, Christopher T. Coen, Nelson E. Lourenco, Adilson S. Cardoso, John D. Cressler:
A 42.5-51.0 GHz SiGe BiCMOS Integrated Tunable Bandpass Filter and Attenuator. BCICTS 2022: 183-186 - 2021
- [j17]Milad Frounchi
Millimeter-Wave SiGe Radiometer Front End With Transformer-Based Dicke Switch and On-Chip Calibration Noise Source. IEEE J. Solid State Circuits 56(5): 1464-1474 (2021) - [c38]Moon-Kyu Cho, Ickhyun Song, Nelson E. Lourenco, Adilson S. Cardoso, Christopher T. Coen, William B. Hunter, Douglas R. Denison, John D. Cressler:
A S/C/X/Ku-band, 4-Tap, Digitally Controllable Analog FIR Filter with Reconfigurable Bandwidth and RF Filtering Profile. BCICTS 2021: 1-4 - [c37]Harrison P. Lee, Jeffrey W. Teng
Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs. BCICTS 2021: 1-4 - [c36]John D. Cressler:
New Developments in SiGe HBT Reliability for RF Through mmW Circuits. IRPS 2021: 1-6 - [c35]George N. Tzintzarov, Jeffrey W. Teng, Adrian Ildefonso, John D. Cressler:
Analysis of the Impact of Radiation-Induced Optical Transients on Deep-Space Optical Communications Systems using PPM. OFC 2021: 1-3 - [c34]Gregory D. Durgin, Michael A. Varner, Mary Ann Weitnauer, John D. Cressler, Manos M. Tentzeris, Alenka G. Zajic, Saeed Zeinolabedinzadeh, Seyed Reza Zekavat, Kaveh Pahlavan, Ulkuhan Guler, Kobus van der Merwe:
Digital Spectrum Twinning and the Role of RFID and Backscatter Communications in Spectral Sensing. RFID-TA 2021: 89-92 - 2020
- [j16]Moon-Kyu Cho
A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width. IEEE Access 8: 2578-2589 (2020) - [j15]Inchan Ju
Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit. IEEE J. Solid State Circuits 55(9): 2356-2370 (2020) - [j14]Md Arifur R. Sarker
Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits. Sensors 20(9): 2581 (2020) - [j13]Milad Frounchi
Dual-Band Millimeter-Wave Quadrature LO Generation With a Common-Centroid Floorplan. IEEE Trans. Circuits Syst. II Express Briefs 67-II(2): 260-264 (2020) - [c33]Clifford D. Y. Cheon, Moon-Kyu Cho, Sunil G. Rao, Adilson S. Cardoso, Jeffrey D. Connor, John D. Cressler:
A New Wideband, Low Insertion Loss SiGe Digital Step Attenuator A New Wideband, Low Insertion Loss SiGe Digital Step Attenuator. BCICTS 2020: 1-5 - [c32]Seokchul Lee, Inchan Ju, Yunyi Gong, Adilson S. Cardoso, Jeffrey D. Connor, Moon-Kyu Cho, John D. Cressler:
Design of an 18-50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier. BCICTS 2020: 1-4 - [c31]Arya Moradinia, Rafael Perez Martinez, Jeffrey W. Teng
Circuit-Level Safe-Operating-Area of a High-Speed SiGe BiCMOS Wireline Driver. BCICTS 2020: 1-5 - [c30]Uppili S. Raghunathan, Pui Yee, Dave Brochu, Vibhor Jain, Harrison P. Lee, John D. Cressler, Dimitris P. Ioannou:
Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs. BCICTS 2020: 1-4 - [c29]Hanbin Ying, Sunil G. Rao, Jeffrey W. Teng
Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing. BCICTS 2020: 1-4 - [c28]Saeed Zeinolabedinzadeh, Patrick Goley, Milad Frounchi, Sunil G. Rao, Christian G. Bottenfield, Gareeyasee Saha, Andy Stark, Stephen E. Ralph, Mehmet Kaynak, Lars Zimmermann, Stefan Lischke, Christian Mai, John D. Cressler:
A Co-Integrated Silicon-Based Electronic-Photonic Wideband, High-Power Signal Source. OFC 2020: 1-3
2010 – 2019
- 2019
- [c27]Moon-Kyu Cho, Ickhyun Song, Nelson E. Lourenco, Adilson S. Cardoso, Christopher T. Coen, Douglas R. Denison, John D. Cressler:
A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics. BCICTS 2019: 1-4 - [c26]Yunyi Gong, Seokchul Lee, Hanbin Ying, Anup P. Omprakash, Edward Gebara, Huifang Gu, Charles Nicholls, John D. Cressler:
A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology. BCICTS 2019: 1-4 - [c25]Rafael Perez Martinez, Uppili S. Raghunathan, Brian R. Wier, Harrison P. Lee, John D. Cressler:
Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown. BCICTS 2019: 1-4 - [c24]Hanbin Ying, Jeffrey W. Teng
DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures. BCICTS 2019: 1-4 - [c23]Zheng Wang, Hanbin Ying, Nujhat Tasneem, Anthony Gaskell, John D. Cressler, Martin Mourigal
Cryogenic Characterization of Antiferroelectric Zirconia down to 50 mK. DRC 2019: 85-86 - [c22]Inchan Ju, Michael J. McPartlin, Chun-Wen Paul Huang, Clifford D. Y. Cheon, Mark Doherty, John D. Cressler:
A Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifier Using a Compact 2nd-Harmonic-Shorting Four-Way Transformer and Integrated Thermal Sensors. ISSCC 2019: 80-82 - 2018
- [j12]Ickhyun Song
Design and Analysis of a Low Loss, Wideband Digital Step Attenuator With Minimized Amplitude and Phase Variations. IEEE J. Solid State Circuits 53(8): 2202-2213 (2018) - [j11]Inchan Ju
A Highly Efficient X-Band Inverse Class-F SiGe HBT Cascode Power Amplifier With Harmonic-Tuned Wilkinson Power Combiner. IEEE Trans. Circuits Syst. II Express Briefs 65-II(11): 1609-1613 (2018) - [c21]Uppili S. Raghunathan, Brian R. Wier, Zachary E. Fleetwood, Michael A. Oakley, Vibhor Jain, John D. Cressler:
Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias Currents. BCICTS 2018: 190-193 - [c20]Sunil Rao, Tianyu Chang, Ickhyun Song, Moon-Kyu Cho, John D. Cressler:
A 1-20 GHz Distributed, Stacked SiGe Power Amplifier. BCICTS 2018: 202-205 - [c19]Anup P. Omprakash, Adrian Ildefonso
Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits. BCICTS 2018: 206-209 - [c18]Brian R. Wier, Rafael Perez Martinez
Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design. BCICTS 2018: 215-218 - [c17]Milad Frounchi, Christopher T. Coen, Clifford D. Y. Cheon, Nelson Lourenco, Wyman Williams, John D. Cressler:
A V-Band SiGe Image-Reject Receiver Front-End for Atmospheric Remote Sensing. BCICTS 2018: 223-226 - [c16]Asad Ali Nawaz, Jubaid Abdul Qayyum, Ahmet Cagri Ulusoy, John D. Cressler, Wibo D. Van Noort:
A new figure-of-merit for CML gate delay estimation. WiSNet 2018: 73-76 - 2017
- [c15]Wyman Williams, Christopher T. Coen, Milad Frounchi
Micronimbus: A cubesat temperature profilometer for the earth's atmosphere using a single-chip 60 GHZ sige radiometer. IGARSS 2017: 2740-2743 - 2015
- [c14]Ahmet Cagri Ulusoy, Robert L. Schmid
High-performance W-band LNA and SPDT switch in 0.13µm SiGe HBT technology. RWS 2015: 162-164 - 2014
- [c13]Seungwoo Jung, Ickhyun Song
Systematic methodology for applying Mason's signal flow graph to analysis of feedback circuits. ISCAS 2014: 2421-2424 - [c12]Seungwoo Jung, Troy D. England
A complementary SiGe HBT on SOI low dropout voltage regulator utilizing a nulling resistor. ISCAS 2014: 2453-2456 - [c11]Adilson S. Cardoso, Prabir K. Saha, Partha S. Chakraborty, David M. Fleischhauer, John D. Cressler:
Low-loss, wideband SPDT switches and switched-line phase shifter in 180-nm RF CMOS on SOI technology. RWS 2014: 199-201 - 2013
- [c10]Christopher T. Coen, Jeffrey R. Piepmeier, John D. Cressler:
Integrated silicon-germanium electronics for CubeSat-based radiometers. IGARSS 2013: 1286-1289 - [c9]Seungwoo Jung, John D. Cressler, Jeff A. Babcock, Greg Cestra, Alan Buchholz:
A design methodology to achieve low input impedance and non-constant gain-bandwidth product in TIAs for optical communication. ISCAS 2013: 598-601 - 2012
- [j10]Prabir K. Saha, Duane C. Howard, Subramaniam Shankar, Ryan Diestelhorst, Troy D. England
A 6-20 GHz Adaptive SiGe Image Reject Mixer for a Self-Healing Receiver. IEEE J. Solid State Circuits 47(9): 1998-2006 (2012) - [j9]Abhilash Goyal, Madhavan Swaminathan, Abhijit Chatterjee, Duane C. Howard, John D. Cressler:
A New Self-Healing Methodology for RF Amplifier Circuits Based on Oscillation Principles. IEEE Trans. Very Large Scale Integr. Syst. 20(10): 1835-1848 (2012) - [c8]Abhilash Goyal, Madhavan Swaminathan, Abhijit Chatterjee, Duane C. Howard, John D. Cressler:
A self-testable SiGe LNA and Built-in-Self-Test methodology for multiple performance specifications of RF amplifiers. ISQED 2012: 7-12 - [c7]Prabir K. Saha, Subramaniam Shankar, Robert L. Schmid
Analysis and design of a 3-26 GHz low-noise amplifier in SiGe HBT technology. RWS 2012: 203-206 - 2011
- [j8]Anuj Madan, Michael J. McPartlin, Zhan-Feng Zhou, Chun-Wen Paul Huang, Christophe Masse, John D. Cressler:
Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN. IEEE J. Solid State Circuits 46(11): 2613-2622 (2011) - 2010
- [j7]Chandradevi Ulaganathan, Neena Nambiar, Kimberly Cornett, Robert L. Greenwell, Jeremy A. Yager, Benjamin S. Prothro, Kevin Tham, Suheng Chen, Richard S. Broughton, Guoyuan Fu, Benjamin J. Blalock, Charles L. Britton Jr., M. Nance Ericson, H. Alan Mantooth, Mohammad M. Mojarradi, Richard W. Berger, John D. Cressler:
A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications. VLSI Design 2010: 156829:1-156829:12 (2010) - [c6]Chad E. Patterson, Tushar K. Thrivikraman, Ana M. Yepes, Swapan K. Bhattacharya, John D. Cressler, John Papapolymerou:
Implementation of a low cost, lightweight X-band antenna with integrated SiGe RF electronics. IGARSS 2010: 681-684
2000 – 2009
- 2009
- [c5]Stephen Horst, Stan Phillips, Hossein Miri Lavasani
SiGe digital frequency dividers with reduced residual phase noise. CICC 2009: 251-254 - [c4]Tonmoy S. Mukherjee, Duane C. Howard, John D. Cressler, Kevin T. Kornegay
A Wide Bandwidth Sige Broadband Amplifier for 100 Gb/s Ethernet Applications. ISCAS 2009: 1835-1838 - 2008
- [j6]Jonathan P. Comeau, Matthew A. Morton, Wei-Min Lance Kuo, Tushar K. Thrivikraman, Joel M. Andrews, Curtis M. Grens, John D. Cressler, John Papapolymerou, Mark Mitchell:
A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules. IEEE J. Solid State Circuits 43(9): 1889-1896 (2008) - [j5]Yuan Yao, Foster F. Dai, Richard C. Jaeger, John D. Cressler:
A 12-Bit Cryogenic and Radiation-Tolerant Digital-to-Analog Converter for Aerospace Extreme Environment Applications. IEEE Trans. Ind. Electron. 55(7): 2810-2819 (2008) - [c3]John D. Cressler:
Emerging application opportunities for SiGe technology. CICC 2008: 57-64 - 2006
- [j4]Jonathan P. Comeau, John D. Cressler:
A 28-GHz SiGe up-conversion mixer using a series-connected triplet for higher dynamic range and improved IF port return loss. IEEE J. Solid State Circuits 41(3): 560-565 (2006) - [c2]Xiangtao Li, Wei-Min Lance Kuo, Yuan Lu, John D. Cressler:
A 20 GS/sec Analog-to-Digital Sigma-Delta Modulator in SiGe HBT Technology. CICC 2006: 221-224 - 2005
- [j3]John D. Cressler:
On the Potential of SiGe HBTs for Extreme Environment Electronics. Proc. IEEE 93(9): 1559-1582 (2005) - [c1]Yevgen Borokhovych, Hans Gustat, Bernd Tillack, Bernd Heinemann, Yuan Lu, Wei-Min Lance Kuo, Xiangtao Li, Ramkumar Krithivasan, John D. Cressler:
A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology. ESSCIRC 2005: 263-266 - 2001
- [j2]Guofu Niu, Zhenrong Jin, John D. Cressler, Rao Rapeta, Alvin J. Joseph, David L. Harame:
Transistor noise in SiGe HBT RF technology. IEEE J. Solid State Circuits 36(9): 1424-1427 (2001)
1990 – 1999
- 1999
- [r1]John D. Cressler:
SiGe Technology. The VLSI Handbook 1999 - 1996
- [j1]Lakshmi S. Vempati, John D. Cressler, Jeffrey Babcock, Richard C. Jaeger, David L. Harame:
Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors. IEEE J. Solid State Circuits 31(10): 1458-1467 (1996)
Coauthor Index
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last updated on 2024-10-07 22:15 CEST by the dblp team
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