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The goal of this work is to present a pulsed-voltage measurement scheme which allows separation of impact-ionization and self-heating effects in the lead-up ...
Abstract—The goal of this work is to present a pulsed- voltage measurement scheme which allows separation of impact- ionization and self-heating effects in ...
This work investigates the impact of collector-base (CB) junction traps on low-frequency noise in high breakdown voltage (HBV) SiGe HBTs. By comparing the base ...
Reliability Differences Between SiGe HBTs Optimized for High-Performance and Medium-Breakdown ... Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs. HP Lee, ...
2022. Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs. HP Lee, JW Teng ... Impact of Device Layout on Thermal Parameters and RF Performance of 90-nm SiGe ...
This paper presents a new physics-based compact model implementation for interface state creation due to hot-carrier degradation in advanced SiGe HBTs.
Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs. Conference Paper. Dec 2021 ; Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe ...
Nov 7, 2022 · Abstract— This paper examines the performance of SiGe HBTs under DC and AC pulsed operating conditions beyond the breakdown voltage.
[PDF] A Comprehensive Study of Safe-Operating-Area, Biasing ...
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multiplication and breakdown in SiGe HBTs was given. Chapter II was devoted to the study of breakdown characteristics in SiGe HBTs. Spe- cific breakdown ...
Nov 6, 2015 · Breakdown mechanisms in advanced SiGe HBTs ... • Unexpected device behavior. • Increasing ... • Introduction on breakdown of SiGe HBTs.
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