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Yasuo Yamaguchi
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2010 – 2019
- 2017
- [c2]Takumi Hasegawa, Yoshiki Yamamoto, Hideki Makiyama, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi:
SOTB (Silicon on Thin Buried Oxide): More than Moore technology for IoT and Automotive. ICICDT 2017: 1-4 - 2014
- [c1]Koichiro Ishibashi, Nobuyuki Sugii, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham, Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita, Shiro Kamohara, Masaru Kadoshima, Keiichi Maekawa, Tomohiro Yamashita, Duc-Hung Le, Takumu Yomogita, Masaru Kudo, Kuniaki Kitamori, Shuya Kondo, Yuuki Manzawa:
A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology. COOL Chips 2014: 1-3
2000 – 2009
- 2007
- [j3]Shigeki Ohbayashi, Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Susumu Imaoka, Yuji Oda, Tsutomu Yoshihara, Motoshige Igarashi, Masahiko Takeuchi, Hiroshi Kawashima, Yasuo Yamaguchi, Kazuhiro Tsukamoto, Masahide Inuishi, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara:
A 65-nm SoC Embedded 6T-SRAM Designed for Manufacturability With Read and Write Operation Stabilizing Circuits. IEEE J. Solid State Circuits 42(4): 820-829 (2007)
1990 – 1999
- 1997
- [j2]Ken'ichi Shimomura, Hiroki Shimano, Narumi Sakashita, Fumihiro Okuda, Toshiyuki Oashi, Yasuo Yamaguchi, Takahisa Eimori, Masahide Inuishi, Kazutami Arimoto, Shigeto Maegawa, Yasuo Inoue, Shinji Komori, Kazuo Kyuma:
A 1-V 46-ns 16-Mb SOI-DRAM with body control technique. IEEE J. Solid State Circuits 32(11): 1712-1720 (1997) - 1994
- [j1]Katsuhiro Suma, Takahiro Tsuruda, Hideto Hidaka, Takahisa Eimori, Toshiyuki Oashi, Yasuo Yamaguchi, Toshiaki Iwamatsu, Masakazu Hirose, Fukashi Morishita, Kazutarni Arimoto, Kazuyasu Fujishima, Yasuo Inoue, Tadashi Nishimura, Tsutomu Yoshihara:
An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology. IEEE J. Solid State Circuits 29(11): 1323-1329 (1994)
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