IXYH50N120C3D1

1200V XPTTM IGBT

GenX3TM w/ Diode

VCES
IC100
VCE(sat)
tfi(typ)

High-Speed IGBT
for 20-50 kHz Switching

=
=

1200V
50A
4.0V
43ns

TO-247 AD
Symbol

Test Conditions

Maximum Ratings

VCES
VCGR

TJ = 25C to 150C
TJ = 25C to 150C, RGE = 1M

VGES
VGEM

1200
1200

V
V

Continuous
Transient

20
30

V
V

IC25
IC100
IF110
ICM

TC
TC
TC
TC

90
50
25
210

A
A
A
A

SSOA
(RBSOA)

VGE = 15V, TVJ = 150C, RG = 5

Clamped Inductive Load

ICM = 100
@VCE VCES

PC

TC = 25C

625

-55 ... +150

150
-55 ... +150

C
C
C

300
260

C
C

1.13/10

Nm/lb.in.

= 25C (Chip Capability)

= 100C
= 110C
= 25C, 1ms

TJ
TJM
Tstg
TL
TSOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

Md

Mounting Torque

G = Gate
E = Emitter

Tab

C
= Collector
Tab = Collector

Features
z
z
z

z
z

Weight

Optimized for Low Switching Losses

Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
International Standard Package

Advantages
z
z

High Power Density

Low Gate Drive Requirement

Applications
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES

IC

= 250A, VGE = 0V

1200

VGE(th)

IC

= 250A, VCE = VGE

3.0

ICES

VCE = VCES, VGE = 0V

VCE = 0V, VGE = 20V

VCE(sat)

IC

z
z

z
z

TJ = 125C
IGES

Characteristic Values
Min.
Typ.
Max.

= 50A, VGE = 15V, Note 1

TJ = 150C

2013 IXYS CORPORATION, All Rights Reserved

4.2

5.0

50
500

A
A

100

nA

4.0

V
V

z
z
z

High Frequency Power Inverters

UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts

DS100388C(02/13)

IXYH50N120C3D1
Symbol Test Conditions
(TJ = 25C Unless Otherwise Specified)

Characteristic Values
Min.
Typ.
Max.

gfs

20

IC = 50A, VCE = 10V, Note 1

Cies
Coes
Cres

VCE = 25V, VGE = 0V, f = 1MHz

Qg(on)
Qge
Qgc

IC = 50A, VGE = 15V, VCE = 0.5 VCES

td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff

Inductive load, TJ = 25C

IC = 50A, VGE = 15V
VCE = 0.5 VCES, RG = 5

Note 2

Inductive load, TJ = 150C

IC = 50A, VGE = 15V
VCE = 0.5 VCES, RG = 5

Note 2

RthJC
RthCS

TO-247 (IXYH) Outline

32

3100
230
66

pF
pF
pF

142
23
60

nC
nC
nC

28
62
3.0
133
43
1.0

ns
ns
mJ
ns
ns
mJ

1.7

28
68
6.0
160
60
1.4

ns
ns
mJ
ns
ns
mJ

0.21

0.20 C/W
C/W

Terminals: 1 - Gate
3 - Emitter

Dim.

Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC

2 - Collector

Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC

Reverse Diode (FRED)

(TJ = 25C, Unless Otherwise Specified)
Symbol
Test Conditions
VF
IRM
trr

IF = 30A,VGE = 0V, Note 1

Characteristic Value
Min. Typ.
Max.
TJ = 150C

IF = 30A,VGE = 0V, -diF/dt = 100A/s, TJ = 100C

VR = 600V

195

TJ = 100C

RthJC

Notes:

3.00

V
V

1.75

ns
0.90 C/W

1. Pulse test, t 300s, duty cycle, d 2%.

2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

7,157,338B2

IXYH50N120C3D1
Fig. 2. Extended Output Characteristics @ T J = 25C

Fig. 1. Output Characteristics @ T J = 25C

250

100

VGE = 15V

VGE = 15V
13V
11V
10V

90
80

14V
13V

200

12V
9V

60

IC - Amperes

IC - Amperes

70

50
8V

40

11V
10V

100
9V

30

7V

20

50

10

8V

6V

7V
6V

0
0

0.5

1.5

2.5

3.5

4.5

5.5

10

20

VCE - Volts

Fig. 3. Output Characteristics @ T J = 150C

Fig. 4. Dependence of VCE(sat) on

Junction Temperature

25

2.2
VGE = 15V
13V
12V
11V
10V

80
70

VGE = 15V

2.0

1.8

VCE(sat) - Normalized

90

9V

60
50

8V

40
7V

30

= 100A

1.6
1.4

= 50A

1.2
1.0
0.8

20
6V

10

= 25A

0.6

5V

0.4
-50

-25

25

VCE - Volts

50

75

100

125

150

175

TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

Fig. 6. Input Admittance

100

8.5
TJ = 25C

90

7.5

80

6.5

70
C

= 100A

IC - Amperes

VCE - Volts

15

VCE - Volts

100

IC - Amperes

150

5.5
4.5
50A

3.5

60
50
40
30

TJ = 150C
25C

20

- 40C

2.5

10

25A
1.5

0
6

10

11

12

VGE - Volts

2013 IXYS CORPORATION, All Rights Reserved

13

14

15

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

VGE - Volts

7.0

7.5

8.0

8.5

9.0

9.5

IXYH50N120C3D1
Fig. 7. Transconductance

Fig. 8. Gate Charge

44

16

TJ = - 40C

40

VCE = 600V

14

I C = 50A

36

28
24

I G = 10mA

12

25C

VGE - Volts

g f s - Siemens

32

150C

20
16
12

10
8
6
4

8
2

4
0

0
0

10

20

30

40

50

60

70

80

90

100

20

40

60

80

100

120

IC - Amperes

QG - NanoCoulombs

Fig. 9. Capacitance

Fig. 10. Reverse-Bias Safe Operating Area

140

10,000

Cies

80

1,000

IC - Amperes

Capacitance - PicoFarads

100

Coes
100

60

40

20

Cres

f = 1 MHz
10
0

10

15

20

25

30

35

40

TJ = 150C
RG = 5
dv / dt < 10V / ns

0
200

400

600

800

1000

1200

VCE - Volts

VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

Z (th)JC - C / W

0.1

0.01

0.001
0.00001

0.0001

0.001

0.01

Pulse Width - Second

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

0.1

IXYH50N120C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance

Fig. 13. Inductive Switching Energy Loss vs.

Collector Current

3.5

30
Eoff

Eon -

---

TJ = 150C , VGE = 15V

3.0

25

15

10
I

0
15

VCE = 600V

15

2.0
1.5

9
TJ = 25C

1.0

0.5

20

25

0.0
20

30

30

40

50

t f i - Nanoseconds

Eoff - MilliJoules

I C = 50A

0
100

500

100

400
I

80

= 100A

300
I

60

0
5

10

15

160

tfi

td(off) - - - -

220

180
TJ = 125C

80

160

60

140
TJ = 25C

120

20

100

0
50

60

70

80

IC - Amperes

2013 IXYS CORPORATION, All Rights Reserved

90

80
100

t f i - Nanoseconds

100

td(off) - - - -

170

RG = 5 , VGE = 15V
VCE = 600V

120

160

100

150
I C = 100A

80

140

I C = 50A

60

130

40

120

20
25

50

75

100

TJ - Degrees Centigrade

125

110
150

t d(off) - Nanoseconds

t f i - Nanoseconds

200

t d(off) - Nanoseconds

VCE = 600V

40

30

180

tfi

140

RG = 5 , VGE = 15V

30

25

Fig. 17. Inductive Turn-off Switching Times vs.

Junction Temperature
240

20

20

RG - Ohms

160

40

200

20

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current

120

= 50A

100

TJ - Degrees Centigrade

140

40

0
150

125

td(off) - - - -

TJ = 150C, VGE = 15V

t d(off) - Nanoseconds

12

75

0
100

VCE = 600V

Eon - MilliJoules

I C = 100A

50

120

16

VCE = 600V

25

90

600

tfi

80

140

----

RG = 5 , VGE = 15V

70

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistance
20

60

IC - Amperes

Fig. 14. Inductive Switching Energy Loss vs.

Junction Temperature
Eon

12

TJ = 150C

RG - Ohms

Eoff

18

= 50A

10

Eoff - MilliJoules

----

Eon - MilliJoules

I C = 100A

Eon

RG = 5 , VGE = 15V

2.5
20

Eon - MilliJoules

Eoff - MilliJoules

VCE = 600V
4

21
Eoff

IXYH50N120C3D1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current

Fig. 18. Inductive Turn-on Switching Times vs.

Gate Resistance
350

200

tri

55

150

45
= 50A

100

35

50

25

0
10

15

20

25

160

36

TJ = 150C, 25C

120

32

80

28

40

24

15
5

40

VCE = 600V

200

td(on) - - - -

RG = 5 , VGE = 15V

= 100A
65

44

20

30

30

RG - Ohms

40

50

60

70

80

90

t d(on) - Nanoseconds

VCE = 600V

250

75

t d(on) - Nanoseconds

t r i - Nanoseconds

td(on) - - - -

TJ = 150C, VGE = 15V

240

t r i - Nanoseconds

tri

300

85

20
100

IC - Amperes

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Temperature
240

44

tri

td(on) - - - -

RG = 5 , VGE = 15V

200

40

160

36
I

C = 100A

120

32

80

28
I C = 50A

40

24

0
25

50

t d(on) - Nanoseconds

t r i - Nanoseconds

VCE = 600V

75

100

125

20
150

TJ - Degrees Centigrade

Fig. 21. Maximum Transient Thermal Impedance (Diode)

1

Z(th)JC - C / W

0.1

0.01

0.001

0.0001
0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Second

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: IXY_50N120C3D1(6N)05-04-12

IXYH50N120C3D1
Fig. 22. Forward Current IF vs VF

Fig. 23. Reverse Recovery Charge QRM vs. -diF/dt

5

70

TVJ = 100C
60

VR = 600V

4
50

IF = 60A

TVJ = 150C

IF
[A]

100C

40

25C

QRM
[C]

30

30A
2

15A

20
1
10
0
0

0.5

1.5

2.5

3.5

0
100

1000

500

VF [V]

-diF/dt [A/s]

Fig. 25. Dynamic Parameters QRM, IRM vs. T VJ

Fig. 24. Peak Reverse Current IRM vs. -diF/dt

2

60
TVJ = 100C

IRM & Q RM [normalized]

VR = 600V

50

40
IF = 60A, 30A, 15A

IRM
30
[A]
20

1.5

1
IRM

0.5
QRM

10

0
0

200

400

600

800

20

1000

40

60

80

100

120

-diF/dt [A/s]

Fig. 26. Recovery Time trr vs. -diF/dt

120

1.2
TVJ = 100C

TVJ = 100C

IF = 30A

100

VR = 600V

200

160

Fig. 27. Peak Forward Voltage VFR, trr vs -diF/dt

220

trr

80

trr
[ns]

140

TVJ [C]

0.8

180

VFR
[V]

IF = 60A
30A
15A

160

140

120

0.6 trr

60

[s]

VFR
40

0.4

20

0.2

0
0

200

400

600

-diF/dt [A/s]

2013 IXYS CORPORATION, All Rights Reserved

800

1000

100

200

300

400

500

600

-diF/dt [A/s]

700

800

900

0
1000