Irfs4321-7Ppbf: Application V 150V R 11.7M 14.7M I 86A

IRFS4321-7PPbF
Application
Motion Control Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High Frequency Circuits
HEXFET Power MOSFET
VDSS
150V
RDS(on) typ.
11.7m
max
S
Benefits
Low Rdson Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching &
EMI Performance
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA
14.7m
ID
86A
Base part number
Package Type
IRFS4321-7PPbF
D2Pak-7Pin
D2Pak 7Pin
G
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number

IRFS4321-7PPbF
IRFS4321TRL7PP
Parameter
Continuous Drain Current, VGS @ 10V
Max.
86
Units
ID @ TC = 25C
ID @ TC = 100C
Continuous Drain Current, VGS @ 10V
61
IDM
Pulsed Drain Current
343
PD @TC = 25C
Maximum Power Dissipation
350
Linear Derating Factor
2.3
W/C
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
30
120
V
mJ
-55 to + 175
C
300
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
RJC
RJA
Typ.
Max.
0.43*
40
Units
C/W
RJC (end of life) for D2Pak and TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150C and is accounted for by the physical wear out of the die attach medium.
Notes through are on page 2
www.irf.com
2013 International Rectifier
June 14, 2013
IRFS4321-7PPbF
Static @ TJ = 25C (unless otherwise specified)

Parameter
Min.
Typ. Max. Units
150
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
150
mV/C Reference to 25C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
11.7
14.7
VGS(th)
Gate Threshold Voltage
3.0
5.0
IDSS
Drain-to-Source Leakage Current
0.8
100
-100
V(BR)DSS
Drain-to-Source Breakdown Voltage
Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Internal Gate Resistance
IGSS
RG(int)
Conditions
VGS = 0V, ID = 250A
m VGS = 10V, ID = 34A

V
VDS = VGS, ID = 250A
20
VDS =150 V, VGS = 0V
1.0
mA VDS =150V,VGS = 0V,TJ =125C

nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)

gfs
Qg
Qgs
Qgd
td(on)
tr
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
130
71
24
21
18
60
110
td(off)
Turn-Off Delay Time
25
tf
Ciss
Coss
Fall Time
Input Capacitance
Output Capacitance
35
4460
390
Crss
Reverse Transfer Capacitance
82
VDS = 25V, ID =50A

ID = 50A
nC VDS = 75V
VGS = 10V
VDD = 98V
ID = 50A
ns
RG= 2.5
VGS = 10V
S
VGS = 0V
pF VDS = 50V
= 1.0MHz

Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ. Max. Units
86
343
VSD
Diode Forward Voltage
1.3
trr
Qrr
IRRM
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current
89
300
6.5
130
450
ns
nC
A
IS
ISM
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
S
TJ = 25C,IS = 50A,VGS = 0V
IF = 50A,
VDD = 128V
di/dt = 100A/s
Notes:
Repetitive rating; pulse width limited by max. junction temperature.

Limited by Tjmax, starting TJ = 25C, L = 0.096mH, RG = 25, IAS = 50A, VGS =10V. Part not recommended for use above this value.
Pulse width 400s; duty cycle 2%.
Ris measured at TJ approximately 90C
www.irf.com
June 14, 2013
IRFS4321-7PPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
BOTTOM
10
5.0V
60s PULSE WIDTH

Tj = 25C
10
100
BOTTOM
5.0V
10
60s PULSE WIDTH

Tj = 175C
1
0.1
0.1
0.1
100
1000
100
3.5
RDS(on) , Drain-to-Source On Resistance

(Normalized)
ID, Drain-to-Source Current)
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
TJ = 175C
10
TJ = 25C
VDS = 25V
60s PULSE WIDTH

0.1
3.0
4.0
5.0
6.0
7.0
8.0
ID = 50A
VGS = 10V
3.0
2.5
2.0
1.5
1.0
0.5
9.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
7000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
5000
Ciss
4000
3000
Coss
2000
1000
Crss
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

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ID= 50A
VDS = 120V
16
VDS= 75V
VDS= 30V
12
0
1
20 40 60 80 100 120 140 160 180
Fig 4. Normalized On-Resistance vs. Temperature

20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
ID, Drain-to-Source Current (A)
TOP
20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

June 14, 2013
IRFS4321-7PPbF
1000
ISD, Reverse Drain Current (A)
1000
100
TJ = 175C
10
TJ = 25C
OPERATION IN THIS AREA

LIMITED BY R DS (on)
100sec
100
1msec
10
10msec
1
Tc = 25C
Tj = 175C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
90
80
ID, Drain Current (A)
70
60
50
40
30
20
10
0
50
75
100
125
150
1000
190
180
170
160
150
140
-60 -40 -20
175
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
TC , Case Temperature (C)
Fig 10. Drain-toSource Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
500
EAS, Single Pulse Avalanche Energy (mJ)
5.0
4.0
Energy (J)
100
Fig 8. Maximum Safe Operating Area

V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
25
10
VDS , Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
3.0
2.0
1.0
I D
13A
20A
BOTTOM 50A
TOP
400
300
200
100
0.0
0
20
40
60
80
100
120
140
160
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical Coss Stored Energy

4
DC
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25
50
75
100
125
150
175
Starting TJ, Junction Temperature (C)
Fig 12. Maximum Avalanche Energy Vs. Drain Current

June 14, 2013
IRFS4321-7PPbF
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
R1
R1
J
1
R2
R2
2
R3
R3
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Ri (C/W)
C
(sec)
0.085239 0.000052
0.18817 0.00098
0.176912 0.008365
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100
Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150C and
Tstart =25C (Single Pulse)
Duty Cycle = Single Pulse
Avalanche Current (A)
0.01
10
0.05
0.10
Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25C and
Tstart = 150C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
120
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 50A
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3BVIav) = T/ ZthJC
Iav = 2T/ [1.3BVZth]
EAS (AR) = PD (ave)tav
Fig 15. Maximum Avalanche Energy vs. Temperature

5
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June 14, 2013
IRFS4321-7PPbF
40
ID = 1.0A
ID = 1.0mA
5.0
ID = 250A
30
IRRM - (A)
VGS(th), Gate threshold Voltage (V)
6.0
4.0
3.0
20
IF = 33A
VR = 128V
10
2.0
TJ = 125C
TJ = 25C
1.0
-75 -50 -25
25
50
75
100 200 300 400 500 600 700 800 900 1000
100 125 150 175
dif / dt - (A / s)
TJ , Temperature ( C )
Fig 17. Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
3200
40
2800
2400
QRR - (nC)
IRRM - (A)
30
20
IF = 50A
VR = 128V
10
1600
1200
IF = 33A
VR = 128V
800
TJ = 125C
TJ = 25C
2000
TJ = 125C
TJ = 25C
400
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
dif / dt - (A / s)
Fig 18. Typical Recovery Current vs. dif/dt
Fig 19. Typical Stored Charge vs. dif/dt
3200
2800
QRR - (nC)
2400
2000
1600
1200
IF = 50A
VR = 128V
800
TJ = 125C
TJ = 25C
400
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
Fig 20. Typical Stored Charge vs. dif/dt

6
www.irf.com
June 14, 2013
IRFS4321-7PPbF
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs
V(BR)DSS
tp
15V
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
I AS
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms

Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit

7
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Qgd
Qgodr
Fig 24b. Gate Charge Waveform
June 14, 2013
IRFS4321-7PPbF
D2Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
June 14, 2013
IRFS4321-7PPbF
D2Pak-7Pin Part Marking Information
D2Pak-7Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com
June 14, 2013
IRFS4321-7PPbF
Qualification Information
Industrial
Qualification Level
(per JEDEC JESD47F)
Moisture Sensitivity Level
D2Pak-7Pin
MSL1
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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June 14, 2013

Irfs4321-7Ppbf: Application V 150V R 11.7M 14.7M I 86A

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IRFS4321-7PPbF

HEXFET Power MOSFET

Base part number

Orderable Part Number

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Notes through are on page 2

2013 International Rectifier

June 14, 2013

Static @ TJ = 25C (unless otherwise specified)

Typ. Max. Units

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

mV/C Reference to 25C, ID = 1mA

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Drain-to-Source Leakage Current

Drain-to-Source Breakdown Voltage

Gate-to-Source Forward Leakage

m VGS = 10V, ID = 34A

VDS = VGS, ID = 250A

VDS =150 V, VGS = 0V

mA VDS =150V,VGS = 0V,TJ =125C

Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Turn-Off Delay Time

Reverse Transfer Capacitance

VDS = 25V, ID =50A

Typ. Max. Units

Diode Forward Voltage

Reverse Recovery Time

Repetitive rating; pulse width limited by max. junction temperature.

2013 International Rectifier

June 14, 2013

60s PULSE WIDTH

60s PULSE WIDTH

RDS(on) , Drain-to-Source On Resistance

ID, Drain-to-Source Current)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

60s PULSE WIDTH

-60 -40 -20

VGS, Gate-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Coss = Cds + Cgd

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

20 40 60 80 100 120 140 160 180

Fig 4. Normalized On-Resistance vs. Temperature

TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

2013 International Rectifier

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

ISD, Reverse Drain Current (A)