WO2022231190A1

WO2022231190A1 - Coating-type high-temperature electrostatic chuck

Info

Publication number: WO2022231190A1
Application number: PCT/KR2022/005521
Authority: WO
Inventors: 김영곤; 박재혁; 한병준; 임종우; 이남희
Original assignee: 디이티 주식회사; 김영곤; 박재혁
Priority date: 2021-04-26
Filing date: 2022-04-18
Publication date: 2022-11-03

Abstract

The present disclosure relates to a coating-type high-temperature electrostatic chuck, and the objective of the present disclosure is to provide a large-area coating-type high-temperature electrostatic chuck which has excellent flatness and does not bend even in a high-temperature environment. To that end, the present disclosure provides a coating-type high-temperature electrostatic chuck comprising: a base member; and a support member made of a first dielectric layer directly coated on the base member, without a bonding layer therebetween, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer, wherein the standard deviation in the thermal expansion coefficients between the base member and the support member is 0.01% to 10%.

Description

Coated Type High Temperature Electrostatic Chuck

The present disclosure relates to a coating type high temperature electrostatic chuck.

Recently, the display industry, such as semiconductor devices, LCD, OLED, and FPD industries, is rapidly developing. Since this development speed means high integration of semiconductor memories and large area of display devices, equipment for manufacturing them is also required to have high function and large area.

In general, an electrostatic chuck is used to fix a wafer or a glass panel at a predetermined position in a vacuum chamber of semiconductor and display manufacturing equipment. Conventionally, a vacuum adsorption method is used to fix a substrate, but In recent years, most of the electrostatic chucks adsorb and hold the wafer or glass panel by the electrostatic force generated therein. That is, the electrostatic chuck is configured to fix the substrate in a horizontal state by generating static electricity in the electrode layer. As the size of the semiconductor wafer or the glass panel for display increases, the size or area of the electrostatic chuck inevitably increases.

As described above, as wafers or display substrates are becoming larger, there is a need for a large-area electrostatic chuck for processing them, and flatness within a set value is also required. For example, in an electrostatic chuck in which an electrode layer and a ceramic layer are provided on a metal base member, as the area increases, the electrostatic chuck is structurally deformed due to factors such as thermal stress or thermal expansion coefficient difference caused in a high-temperature environment and is mounted thereon. There is a high possibility that the flatness of the substrate to be used is lowered, and there is a problem in that the force holding the substrate, that is, the chucking force, is weakened due to the lowering of the flatness.

For the above reasons, since the overall flatness of each electrostatic chuck is different, it is difficult to control the deformation to make the flatness uniform over the entire plane. There are a lot of problems to do. In other words, when the structure of the electrostatic chuck is non-uniform, the surface of the electrostatic chuck does not have a flatness within a set value, and thus the substrate cannot be strongly held.

The above-described information disclosed in the background technology of the present invention is only for improving the understanding of the background of the present invention, and thus may include information that does not constitute the prior art.

An object to be solved according to the present disclosure is to provide a large-area coating-type high-temperature electrostatic chuck that does not warp even in a high-temperature environment and has excellent flatness.

A coating-type high-temperature electrostatic chuck according to the present disclosure includes a base member; and a support member comprising a first dielectric layer directly coated on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer, wherein The standard deviation of the coefficient of thermal expansion between the base member and the support member may be 0.01% to 10%.

In some examples, the coating type high temperature electrostatic chuck may be used in a range of 200°C to 800°C.

In some examples, the base member and the support member may be rectangular or circular when viewed from above.

In some examples, the length of one side of the support member may be 400 mm to 3500 mm, or the diameter of the support member may be 100 mm to 400 mm.

In some examples, the first dielectric layer may be directly coated on the base member by atmospheric pressure plasma spraying.

In some examples, the second dielectric layer may be directly coated on the electrode layer and the first dielectric layer by atmospheric pressure plasma spraying.

In some examples, the base member may include a cooling line formed in a lower region; and a heating line formed in the upper region.

In some examples, it may further include a plasma-resistant coating layer formed on the second dielectric layer.

A coating-type high-temperature electrostatic chuck according to the present disclosure includes a base member; and a support member comprising a first dielectric layer directly coated on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer, wherein The base member may include titanium or a metal-ceramic composite, and the support member may include aluminum oxide.

A coating-type high-temperature electrostatic chuck according to the present disclosure includes a base member; and a support member comprising a first dielectric layer directly coated on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer, wherein The base member may further include a heat blocking area or a heat spreading area.

In some examples, the base member may include a cooling line formed in a lower region; and a heating line formed in the upper region, wherein the heat blocking region may be provided in the form of a cavity between the lower region and the upper region.

In some examples, the lower region and the upper region may be connected through a connection region provided between the heat blocking region.

In some examples, the heat diffusion region may be provided on the base member.

In some examples, the thermal diffusion region may include silicon carbide, aluminum nitride, metal-ceramic composite, silicon carbide-aluminum, or silicon carbide-silicon.

The present disclosure may provide a large-area coating-type high-temperature electrostatic chuck that does not warp even in a high-temperature environment and has excellent flatness. In some examples, the present disclosure provides a structure and/or material of the base member and the support member such that the standard deviation for the coefficient of thermal expansion between the base member and the support member ranges from about 0.01% to about 10%, whereby the structure and/or material is provided at approximately 200°C. In a high-temperature environment of about 800° C. to about 800° C., the base member and the support member do not bend similarly to the bimetal, thereby providing a large-area coating-type high-temperature electrostatic chuck having excellent flatness.

In addition, according to the present disclosure, a heat shielding region is further interposed between the lower region having a cooling line and an upper region having a heating line among the base member, so that energy consumed to maintain the set temperature of the lower region and the upper region can be reduced. It is possible to provide a high-temperature electrostatic chuck with

In addition, according to the present disclosure, since a heat diffusion region is further provided on the base member, heat by the heating line is uniformly spread, and thus, it is possible to provide a high-temperature electrostatic chuck having a uniform temperature over the entire area of the support member.

1 is a cross-sectional view illustrating an exemplary coating type high temperature electrostatic chuck according to the present disclosure.

2A-2D are schematic diagrams illustrating a method of manufacturing an exemplary coating type high temperature electrostatic chuck according to the present disclosure.

3A to 3C are cross-sectional views illustrating another exemplary coating type high temperature electrostatic chuck according to the present disclosure.

4 is a cross-sectional view illustrating another exemplary coating type high temperature electrostatic chuck according to the present disclosure.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The present disclosure is provided to more completely explain the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, and the scope of the present invention is limited to the following examples It is not limited. Rather, these examples are provided so that this disclosure will be more thorough and complete, and will fully convey the spirit of the invention to those skilled in the art.

In addition, in the following drawings, the thickness or size of each layer is exaggerated for convenience and clarity of description, and the same reference numerals in the drawings refer to the same elements. As used herein, the term “and/or” includes any one and any combination of one or more of those listed items. In addition, in the present specification, "connected" means not only when member A and member B are directly connected, but also when member A and member B are indirectly connected by interposing member C between member A and member B. do.

The terminology used herein is used to describe specific embodiments, not to limit the present invention. As used herein, the singular form may include the plural form unless the context clearly dictates otherwise. Also, as used herein, “comprise, include” and/or “comprising, including” refer to the referenced shapes, numbers, steps, actions, members, elements and/or groups thereof. It specifies the presence and does not exclude the presence or addition of one or more other shapes, numbers, movements, members, elements and/or groups.

Although the terms first, second, etc. are used herein to describe various members, parts, regions, layers and/or parts, these members, parts, regions, layers, and/or parts are limited by these terms, so that It is self-evident that These terms are used only to distinguish one member, component, region, layer or portion from another region, layer or portion. Accordingly, a first member, component, region, layer, or portion discussed below may refer to a second member, component, region, layer or portion without departing from the teachings of the present invention.

Space-related terms such as “beneath”, “below”, “lower”, “above”, and “upper” refer to an element or feature shown in the drawings and It may be used to facilitate understanding of other elements or features. These space-related terms are for easy understanding of the present invention according to various process conditions or usage conditions of the present invention, and are not intended to limit the present invention. For example, if an element or feature in a figure is turned over, an element or feature described as "below" or "below" becomes "above" or "above". Accordingly, "below" is a concept encompassing "above" or "below".

In the example shown in FIG. 1 , an exemplary coating type high temperature electrostatic chuck 100 according to the present disclosure may include a base member 110 and a support member 120 .

The base member 110 may include a lower region 112 having a relatively large width and an upper region 114 having a relatively small width on the lower region 112 . In some examples, a plurality of cooling lines 111 may be provided with a predetermined pitch in the lower region 112 , and heating lines 113 may be provided in the upper region 114 with a predetermined pitch. A cooling medium flows through the cooling line 111 to cool the lower region 112 of the base member 110 to a predetermined temperature, and a current flows through the heating line 113 to the upper region 114 of the base member 110 . can be heated to a predetermined temperature. In some examples, the heating line 113 may be formed of a nickel-chromium hot wire and an insulator surrounding it.

In some examples, the base member 110 may be provided of pure titanium or a titanium alloy. In the case of pure titanium, the coefficient of thermal expansion (Thermal Expansion Coefficient, unit m/m°C) may be about 8.6 x 10 ^-6 , and in the case of titanium alloy, the thermal expansion coefficient may be about 9.4 x 10 ^-6 .

The support member 120 may be provided directly on the base without a bonding layer. In some examples, the support member 120 may include a first dielectric layer 121 , an electrode layer 123 , and a second dielectric layer 122 . The first dielectric layer 121 may be provided by being directly coated on the base member 110 without a bonding layer. The electrode layer 123 may be provided on the first dielectric layer 121 . The second dielectric layer 122 may be coated on the first dielectric layer 121 and the electrode layer 123 .

In some examples, the first dielectric layer 121 may be directly coated on the base member 110 by atmospheric pressure plasma spraying. In some examples, the second dielectric layer 122 may be directly coated on the electrode layer 123 and the first dielectric layer 121 by atmospheric pressure plasma spraying. In some examples, methods of aerosol deposition, arc spray, high velocity oxyfuel spray, cold spray or flame spray may be used in addition to atmospheric pressure plasma spraying.

In some examples, at least one of the first and second

dielectric layers

121 and 122 may be made of ceramic. In some examples, at least one of the first and second

dielectric layers

121 and 122 may include zirconia (ZrO2), beryllium oxide (BeO), aluminum oxide (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), or silicon nitride (Si3N4). or aluminum titanate (Al2TiO5). In some examples, at least one of the first and second

dielectric layers

121 and 122 may include yttrium oxide (Y2O3) or yttrium oxide (YOF).

In some examples, the coefficient of thermal expansion of zirconia is approximately 11×10 ⁻⁶ . In some examples, the coefficient of thermal expansion of beryllium oxide is approximately 8×10 ⁻⁶ . In some examples, the coefficient of thermal expansion of aluminum oxide is approximately 7.3 x 10 ^-6 . In some examples, the coefficient of thermal expansion of aluminum nitride is approximately 4.4 x 10 ^-6 . In some examples, the coefficient of thermal expansion of silicon carbide is approximately 3.7 x 10 ^-6 . In some examples, the coefficient of thermal expansion of aluminum nitride is approximately 3.4×10 ⁻⁶ . In some examples, the coefficient of thermal expansion of aluminum titanate is approximately 1×10 ⁻⁶ . In some examples, the coefficient of thermal expansion of yttrium oxide and yttrium oxide fluoride is between about 10 and about 10.5 x 10 ^-6 .

In some examples, the base member 110 and/or the support member 120 may be provided in an approximately square shape when viewed from the top for a display glass and approximately circular when viewed from the top for a semiconductor wafer. may be provided in the form.

In some examples, when the electrostatic chuck is used for manufacturing a display, the length of one side of the support member 120 may be about 400 mm to about 3500 mm. In some examples, when the electrostatic chuck is used for manufacturing a semiconductor, the diameter of the support member 120 may be about 100 mm to about 400 mm.

In some examples, the electrostatic chuck may be used in a temperature range of approximately 200°C to approximately 800°C. In some examples, the standard deviation of the coefficient of thermal expansion between the base member 110 and the support member 120 may be between approximately 0.01% and approximately 10%. Accordingly, in the range of about 200° C. to about 800° C., which is the operating temperature of the electrostatic chuck, a warping phenomenon due to a difference in the coefficient of thermal expansion between the base member 110 and the support member 120 may be minimized, and accordingly, electrostatic discharge in a high-temperature environment The flatness of the chuck can be maintained excellently.

In some examples, when the base member 110 is provided with pure titanium (CTE: 8.6) and the first and second

dielectric layers

121 and 122 constituting the support member 120 are provided with beryllium oxide (CTE: 8), The standard deviation of the CTE may be approximately 0.4%. In some examples, when the base member 110 is provided with pure titanium (CTE: 8.6) and the first and second

dielectric layers

121 and 122 constituting the support member 120 are provided with aluminum oxide (CTE: 7.3), The standard deviation of the CTE may be approximately 0.9%.

In some examples, when the base member 110 is provided with a titanium alloy (CTE: 9.4) and the first and second

dielectric layers

121 and 122 constituting the support member 120 are provided with beryllium oxide (CTE: 8), The standard deviation of the CTE may be approximately 1%. In some examples, when the base member 110 is provided with a titanium alloy (CTE: 9.4), and the first and second

dielectric layers

121 and 122 constituting the support member 120 are provided with aluminum oxide (CTE: 7.3), The standard deviation of the CTE may be approximately 1.5%.

dielectric layers

121 and 122 constituting the support member 120 are provided with yttrium oxide (CTE: 10), The standard deviation of the CTE may be approximately 1.9%.

In this way, even when the electrostatic chuck according to the present disclosure is used in a high temperature environment of about 200° C. to about 800° C., the standard deviation of the coefficient of thermal expansion between the base member 110 and the support member 120 is less than about 2%. , it is possible to maintain excellent flatness with almost no warpage.

Meanwhile, as in the prior art, when the base member 110 is provided with aluminum (CTE: 23), and the first and second

dielectric layers

121 and 122 constituting the support member 120 are provided with aluminum oxide (CTE: 7.3), The standard deviation of the CTE is approximately 11%. In this case, when the electrostatic chuck is used in the above-described high-temperature environment, a warpage phenomenon occurs greatly due to a difference in CTE between the base member 110 and the support member 120 , and thus flatness is deteriorated for display glass or semiconductor wafer. The electrostatic chuck cannot be fixed with strong force.

2A-2D are schematic diagrams illustrating a method of manufacturing an exemplary coating-type high-temperature electrostatic chuck 100 according to the present disclosure.

2A illustrates an initial stage of manufacturing an exemplary coating type high temperature electrostatic chuck 100 according to the present disclosure. The base member 110 in which a plurality of cooling lines 111 are provided in the lower region 112 and a plurality of heating lines 113 in the upper region 114 may be provided. In some examples, the base member 110 may be provided of pure titanium or a titanium alloy.

2B illustrates a later stage of manufacture of an exemplary coated-type high-temperature electrostatic chuck 100 according to the present disclosure. The first dielectric layer 121 may be directly coated on the base member 110 . In some examples, aluminum oxide powder may be coated on the base member 110 by atmospheric pressure plasma spraying. Accordingly, there is no bonding layer between the base member 110 and the first dielectric layer 121 , and the first dielectric layer 121 may be provided directly on the base member 110 . Reference numeral 150 in the drawings denotes a powder spray nozzle.

2C illustrates a later stage of manufacture of an exemplary coating type high temperature electrostatic chuck 100 according to the present disclosure. An electrode layer 123 may be provided on the first dielectric layer 121 . The electrode layer 123 may also be provided by a plating method or various spray methods described above. The electrode layer 123 may include tungsten (W) and/or titanium (Ti).

2D illustrates a later stage of manufacture of an exemplary coated-type high-temperature electrostatic chuck 100 according to the present disclosure. The second dielectric layer 122 may be directly coated on the first dielectric layer 121 and the electrode layer 123 . In some examples, aluminum oxide powder may be coated on the first dielectric layer 121 and the electrode layer 123 by atmospheric pressure plasma spraying. Here, the first dielectric layer 121 , the electrode layer 123 , and the second dielectric layer 122 may be defined or referred to as the support member 120 .

As such, since the base member 110 includes titanium and the support member 120 includes aluminum oxide, the standard deviation of the coefficients of thermal expansion between the base member 110 and the support member 120 is less than approximately 2%. Therefore, even when the electrostatic chuck is used in a high temperature environment of about 200° C. to about 800° C., the bending phenomenon of the base member 110 and the support member 120 hardly occurs and excellent flatness is maintained. Accordingly, the holding force of the glass or wafer by the electrostatic chuck may be excellently maintained.

3A to 3C are cross-sectional views illustrating other exemplary coating-type high-temperature electrostatic chucks 200A, 200B, and 200C according to the present disclosure.

3A to 3C , other exemplary coating-type high-temperature electrostatic chucks 200A, 200B, and 200C according to the present disclosure, in particular, the base member 110 includes a cooling line 111 (a lower region or cooling system). It may further include

thermal blocking regions

230A, 230B, and 230C interposed between the region 112) and the heating line 113 (the upper region or the heating region 114).

In some examples, the lower region 112 may be maintained at a temperature of approximately 60° C. due to the cooling line 111 , and the upper region 114 may be maintained at a temperature of approximately 600° C. due to the heating line 113 . . However, when the lower region 112 and the upper region 114 are directly connected, thermal energy is exchanged with each other, so that more energy is input to maintain the set temperature of the lower region 112 and the upper region 114, respectively. Needs to be.

However, as described above, when the

heat blocking regions

230A, 230B, and 230C are interposed between the cooling line 111 and the heating line 113 , the thermal energy between the cooling line 111 and the heating line 113 is Since the flow is blocked, energy for maintaining the set temperatures of the lower region 112 and the upper region 114 may be further input.

In some examples, the

thermal barrier regions

230A, 230B, 230C include a cavity, or a cavity and an insulating material filled therein (eg, airgel, perlite, foamed glass, mineral wool, glass wool, etc.) or a cavity and a metal-ceramic composite (MMC) filled therein.

In the electrostatic chuck 200A illustrated in FIG. 3A , one heat blocking region 230A may be provided horizontally between the cooling line 111 and the heating line 113 . In the electrostatic chuck 200B shown in FIG. 3B , a plurality of heat blocking regions 230B may be provided in a horizontal direction between the cooling line 111 and the heating line 113 . In the electrostatic chuck 200C shown in FIG. 3C , a plurality of heat blocking regions 230C are provided in a horizontal direction between the cooling line 111 and the heating line 113 , and the lower region 112 and the upper region 114 are provided. ) may be connected to each other through the connection region 115 between the heat blocking regions 230C.

In this way, the present disclosure further interposes the

heat blocking regions

230A, 230B, and 230C between the cooling line 111 and the heating line 113, so that the set temperature of the lower region 112 by the cooling line 111 is Relatively little energy (eg, electrical energy) is required to maintain and maintain the set temperature of the upper region 114 by the heating line 113 .

4 is a cross-sectional view illustrating another exemplary coating type high temperature electrostatic chuck 300 according to the present disclosure.

In the example shown in FIG. 4 , another exemplary coating type high temperature electrostatic chuck 300 according to the present disclosure may further include a heat diffusion region 340 interposed between the base member 110 and the support member 120 . have.

In some examples, since the heating lines 113 are arranged with a predetermined pitch, the temperature of the upper region 114 of the base member 110 may be different for each region. For example, the temperature of the region close to the heating line 113 may be relatively high, and the temperature of the region far from the heating line 113 may be relatively low.

The heat diffusion region 340 may be provided on the base member 110 . In some examples, the heat diffusion region 340 is interposed between the upper region 114 provided with the heating line 113 and the support member 120 , thereby reducing a temperature difference for each region. In some examples, the heat diffusion region 340 may be formed of a material having a higher thermal conductivity than that of the base member 110 . In some examples, the thermal diffusion region 340 may be provided of silicon carbide, aluminum nitride, metal-ceramic composite, silicon carbide-aluminum, silicon carbide-silicon, or metal-ceramic composite (MMC). In some examples, the thermal conductivity (unit: W/mK) of the thermal diffusion region 340 may be greater than approximately 100. For example, the thermal conductivity of silicon carbide is approximately 190, and the thermal conductivity of aluminum nitride is approximately 275. Here, when the base member 110 is provided with pure titanium or a titanium alloy, the thermal conductivity is about 17.

Accordingly, since the heat diffusion region 340 having high thermal conductivity is provided on the base member 110 having low thermal conductivity, the temperature deviation with respect to the upper region 114 of the base member 110 by the heating line 113 is reduced and , it is possible to maintain a uniform temperature over the entire upper region 114 provided in the base member 110 . That is, since the temperature of the support member 120 for fixing the glass or wafer is made uniformly without deviation by region, various problems (difference in deposition rate or etching rate according to temperature) due to temperature deviation in the manufacturing process do not occur. .

In some examples, a plasma-resistant coating layer may be further provided on the second dielectric layer 122 . In some examples, the plasma coating layer is a ceramic powder on the second dielectric layer arc spray (Arc Spray), HVOF (High Velocity Oxy-Fuel Spraying), plasma spray (Plasma Spray), cold spray (Cold Spray), flame spray ( Flame Spray), it may be formed using a method such as aerosol deposition (Aerosol Deposition). In some examples, the ceramic powder is an etchant-resistant yttrium-based oxide, fluoride, nitride, Y ₂ O ₃ -Al ₂ O ₃ based compound (YAG, YAP, YAM), B ₄ C, ZrO ₂ , alumina (Al ₂ O) ₃ ) may be one or a mixture of two selected from the group consisting of.

What has been described above is only one embodiment for implementing the coating-type high-temperature electrostatic chuck according to the present invention, and the present invention is not limited to the above-described embodiment, and as claimed in the claims below, the present invention Without departing from the gist, it will be said that the technical spirit of the present invention exists to the extent that various modifications can be made by anyone with ordinary knowledge in the field to which the invention pertains.

Claims

base member; and

A support member comprising a first dielectric layer directly coated on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer,

The standard deviation of the coefficient of thermal expansion between the base member and the support member is 0.01% to 10%.
The method of claim 1,

The coating-type high-temperature electrostatic chuck is used in a range of 200°C to 800°C.
The method of claim 1,

wherein the base member and the support member are rectangular or circular when viewed from above.
The method of claim 1,

The length of one side of the support member is 400mm to 3500mm, or the diameter of the support member is 100mm to 400mm, a coating type high temperature electrostatic chuck.
The method of claim 1,

The first dielectric layer is directly coated on the base member by atmospheric pressure plasma spray method, a coating type high-temperature electrostatic chuck.
The method of claim 1,

and the second dielectric layer is directly coated on the electrode layer and the first dielectric layer by atmospheric pressure plasma spraying.
The method of claim 1,

the base member

a cooling line formed in the lower region; and

Coating type high temperature electrostatic chuck further comprising a heating line formed in the upper region.
The method of claim 1,

A coating-type high-temperature electrostatic chuck further comprising a plasma-resistant coating layer formed on the second dielectric layer.
base member; and

A support member comprising a first dielectric layer directly coated on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer,

The base member comprises titanium or a metal-ceramic composite, and the support member comprises aluminum oxide.
10. The method of claim 9,

The coating-type high-temperature electrostatic chuck is used in a range of 200°C to 800°C.
10. The method of claim 9,

wherein the base member and the support member are rectangular or circular when viewed from above.
10. The method of claim 9,

The length of one side of the support member is 400mm to 3500mm, or the diameter of the support member is 100mm to 400mm, a coating type high temperature electrostatic chuck.
10. The method of claim 9,

The first dielectric layer is directly coated on the base member by atmospheric pressure plasma spray method, a coating type high-temperature electrostatic chuck.
10. The method of claim 9,

and the second dielectric layer is directly coated on the electrode layer and the first dielectric layer by atmospheric pressure plasma spraying.
10. The method of claim 9,

the base member

a cooling line formed in the lower region; and

Coating type high temperature electrostatic chuck further comprising a heating line formed in the upper region.
10. The method of claim 9,

A coating-type high-temperature electrostatic chuck further comprising a plasma-resistant coating layer formed on the second dielectric layer.
base member; and

A support member comprising a first dielectric layer directly coated on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer,

The base member further includes a heat blocking area or a heat diffusion area.
18. The method of claim 17,

The coating-type high-temperature electrostatic chuck is used in a range of 200°C to 800°C.
18. The method of claim 17,

wherein the base member and the support member are rectangular or circular when viewed from above.
18. The method of claim 17,

The length of one side of the support member is 400mm to 3500mm, or the diameter of the support member is 100mm to 400mm, a coating type high temperature electrostatic chuck.
18. The method of claim 17,

The first dielectric layer is directly coated on the base member by atmospheric pressure plasma spray method, a coating type high-temperature electrostatic chuck.
18. The method of claim 17,

and the second dielectric layer is directly coated on the electrode layer and the first dielectric layer by atmospheric pressure plasma spraying.
18. The method of claim 17,

the base member

a cooling line formed in the lower region; and

Further comprising a heating line formed in the upper region,

The heat blocking region is provided in the form of a cavity between the lower region and the upper region.
24. The method of claim 23,

and the lower region and the upper region are connected through a connection region provided between the heat blocking region.
18. The method of claim 17,

and the heat diffusion region is provided on the base member.
26. The method of claim 25,

wherein the thermal diffusion region comprises silicon carbide, aluminum nitride, metal-ceramic composite, silicon carbide-aluminum or silicon carbide-silicon.
18. The method of claim 17,

A coating-type high-temperature electrostatic chuck further comprising a plasma-resistant coating layer formed on the second dielectric layer.