KR102635169B1 - Coating type high temperature electrostatic chuck - Google Patents

Abstract

This disclosure relates to a coating-type high-temperature electrostatic chuck, and the technical problem to be solved is to provide a large-area coating-type high-temperature electrostatic chuck that does not bend even in a high-temperature environment and has excellent flatness. For this purpose, the present disclosure provides a base member; and a support member consisting of a first dielectric layer coated directly on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer, Provided is a coating type high temperature electrostatic chuck, wherein the base member further includes a heat blocking area or a heat spreading area.

Description

Coating type high temperature electrostatic chuck}

This disclosure relates to a coating type high temperature electrostatic chuck.

Recently, the display industry, including semiconductor devices, LCD, OLED, and FPD industries, is experiencing rapid development. Because this pace of development means higher integration of semiconductor memories and larger areas of display devices, the equipment that manufactures them is also required to be highly functional and large-area.

In general, an electrostatic chuck is used to fix a wafer or glass panel in a certain position inside the vacuum chamber of semiconductor and display manufacturing equipment. In the past, a vacuum adsorption method was used to fix the substrate. Recently, most electrostatic chucks play the role of adsorbing and holding wafers or glass panels by the electrostatic force generated inside them. In other words, the electrostatic chuck is configured to generate static electricity in the electrode layer to fix the substrate in a horizontal state. As the size of the semiconductor wafer or display glass panel increases, the size and area of the electrostatic chuck inevitably increase.

As above, as wafers and display substrates become larger, the need for large-area electrostatic chucks for processing them is required, and flatness within a set value is also required. For example, as the area of an electrostatic chuck provided with an electrode layer and a ceramic layer on a metal base member increases, the electrostatic chuck is structurally deformed due to factors such as thermal stress or difference in thermal expansion coefficient caused by a high-temperature environment and is mounted on it. There is a high possibility that the flatness of the substrate being used will decrease, and there is a problem that the force to hold the substrate, that is, the chucking force, becomes weak due to the decrease in flatness.

For the above reasons, the overall flatness of each electrostatic chuck is different, making it difficult to control this deformation and make the flatness uniform across the entire plane. In fact, the larger the area of the electrostatic chuck, the more uneven the force supporting the substrate is. There are many problems that arise. In other words, if the structure of the electrostatic chuck is non-uniform, the surface of the electrostatic chuck will not have a flatness within the set value, and therefore will not be able to hold the substrate strongly.

The above-described information disclosed in the background technology of this invention is only for improving understanding of the background of the present invention, and therefore may include information that does not constitute prior art.

The problem to be solved according to the present disclosure is to provide a large-area coated type high-temperature electrostatic chuck that does not bend even in a high-temperature environment and has excellent flatness.

A coating-type high-temperature electrostatic chuck according to the present disclosure includes a base member; and a support member consisting of a first dielectric layer coated directly on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer, The base member includes a cooling line formed in a lower area; Heating line formed in the upper area; And a cavity may be provided between the lower area and the upper area, and the inside of the cavity may be filled with a heat insulating material.
A coating-type high-temperature electrostatic chuck according to the present disclosure includes a base member; A support member consisting of a first dielectric layer coated directly on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer; and a heat diffusion region interposed between the base member and the support member, wherein the base member includes a cooling line formed in a lower region. Heating line formed in the upper area; and a heat shielding area provided with a cavity between the lower area and the upper area.
A coating-type high-temperature electrostatic chuck according to the present disclosure includes a base member; A support member consisting of a first dielectric layer coated directly on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer; and a heat diffusion region interposed between the base member and the support member, wherein the base member includes a cooling line formed in a lower region. Heating line formed in the upper area; And a cavity may be provided between the lower area and the upper area, and the inside of the cavity may be filled with a heat insulating material.
In some examples, the coating type high temperature electrostatic chuck can be used in the range of 200°C to 800°C.
In some examples, the base member and the support member may be square or circular when viewed from the top.
In some examples, the length of one side of the support member may be 400 mm to 3500 mm, or the diameter of the support member may be 100 mm to 400 mm.
In some examples, the first dielectric layer may be coated directly on the base member using an atmospheric pressure plasma spray method.
In some examples, the second dielectric layer may be coated directly on the electrode layer and the first dielectric layer using an atmospheric pressure plasma spray method.
In some examples, the lower region and the upper region may be connected through a connection region provided between the heat shield regions.
In some examples, the heat spreading region may include silicon carbide, aluminum nitride, metal-ceramic composite, silicon carbide-aluminum, or silicon carbide-silicon.

delete

delete

delete

delete

delete

delete

delete

delete

delete

The present disclosure can provide a large-area coated type high-temperature electrostatic chuck that does not bend even in a high-temperature environment and has excellent flatness. In some examples, the present disclosure provides structures and/or materials for the base member and the support member such that the standard deviation for the coefficient of thermal expansion between the base member and the support member ranges from approximately 0.01% to approximately 10%, thereby providing a temperature range of approximately 200°C. In a high temperature environment of about 800°C, the base member and the support member do not bend similarly to a bimetal, and thus a large-area coating type high-temperature electrostatic chuck with excellent flatness can be provided.

In addition, the present disclosure further provides a heat blocking area between the lower area with the cooling line and the upper area with the heating line in the base member, thereby reducing the energy consumed in maintaining the set temperature of the lower area and the upper area. A high temperature electrostatic chuck can be provided.

In addition, the present disclosure provides a high-temperature electrostatic chuck by further providing a heat diffusion area on the base member, so that heat by the heating line is spread uniformly, and thus the entire area of the support member has a uniform temperature.

1 is a cross-sectional view showing an exemplary coating-type high-temperature electrostatic chuck according to the present disclosure.
2A to 2D are schematic diagrams showing a method of manufacturing an exemplary coating-type high-temperature electrostatic chuck according to the present disclosure.
3A to 3C are cross-sectional views showing another exemplary coating type high temperature electrostatic chuck according to the present disclosure.
4 is a cross-sectional view showing another exemplary coating type high temperature electrostatic chuck according to the present disclosure.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

The present disclosure is provided to more completely explain the present invention to those skilled in the art, and the following examples may be modified in various other forms, and the scope of the present invention is limited to the following examples. It is not limited. Rather, these embodiments are provided to make the disclosure more faithful and complete, and to fully convey the spirit of the invention to those skilled in the art.

In addition, in the drawings below, the thickness and size of each layer are exaggerated for convenience and clarity of explanation, and the same symbols refer to the same elements in the drawings. As used herein, the term “and/or” includes any one and all combinations of one or more of the listed items. In addition, the meaning of "connected" in this specification refers not only to the case where member A and member B are directly connected, but also to the case where member C is interposed between member A and member B to indirectly connect member A and member B. do.

The terms used herein are used to describe specific embodiments and are not intended to limit the invention. As used herein, the singular forms include the plural forms unless the context clearly indicates otherwise. Additionally, when used herein, “comprise, include,” and/or “comprising, including” refer to mentioned features, numbers, steps, operations, members, elements, and/or groups thereof. It specifies the presence and does not exclude the presence or addition of one or more other shapes, numbers, movements, members, elements and/or groups.

Although the terms first, second, etc. are used herein to describe various members, parts, regions, layers and/or parts, these members, parts, regions, layers and/or parts are limited by these terms. It is obvious that this cannot be done. These terms are used only to distinguish one member, component, region, layer or section from another region, layer or section. Accordingly, a first member, component, region, layer or portion described below may refer to a second member, component, region, layer or portion without departing from the teachings of the present invention.

Space-related terms such as “beneath,” “below,” “lower,” “above,” and “upper” are used to refer to an element or feature shown in a drawing. It can be used to facilitate understanding of other elements or features. These space-related terms are for easy understanding of the present invention according to various process states or usage states of the present invention, and are not intended to limit the present invention. For example, if an element or feature in a drawing is turned over, an element or feature described as “bottom” or “below” becomes “top” or “above.” Therefore, “below” is a concept encompassing “top” or “below.”

In the example shown in FIG. 1 , an exemplary coating type high temperature electrostatic chuck 100 according to the present disclosure may include a base member 110 and a support member 120 .

The base member 110 may include a lower region 112 with a relatively large width, and an upper region 114 with a relatively small width on the lower region 112. In some examples, a plurality of cooling lines 111 may be provided in the lower area 112 with a predetermined pitch, and heating lines 113 may be provided in the upper area 114 with a predetermined pitch. A cooling medium flows through the cooling line 111 to cool the lower region 112 of the base member 110 to a predetermined temperature, and current flows through the heating line 113 to cool the upper region 114 of the base member 110. Can be heated to a predetermined temperature. In some examples, the heating line 113 may be made of a nickel-chromium heating wire and an insulator surrounding it.

In some examples, base member 110 may be provided from pure titanium or titanium alloy. In the case of pure titanium, the thermal expansion coefficient (unit: m/m℃) may be approximately 8.6 x 10 ^-6 , and in the case of titanium alloy, the thermal expansion coefficient may be approximately 9.4 x 10 ^-6 .

The support member 120 may be provided directly without a bonding layer on the base. In some examples, support member 120 may include a first dielectric layer 121, an electrode layer 123, and a second dielectric layer 122. The first dielectric layer 121 may be provided by coating directly on the base member 110 without a bonding layer. The electrode layer 123 may be provided on the first dielectric layer 121. The second dielectric layer 122 may be provided by being coated on the first dielectric layer 121 and the electrode layer 123.

In some examples, the first dielectric layer 121 may be provided by being directly coated on the base member 110 using an atmospheric pressure plasma spray method. In some examples, the second dielectric layer 122 may be coated directly on the electrode layer 123 and the first dielectric layer 121 using an atmospheric pressure plasma spray method. In some examples, in addition to the atmospheric pressure plasma spray method, aerosol deposition, arc spray, high-velocity oxyfuel spray, cold spray, or flame spray may be used.

In some examples, at least one of the first and second dielectric layers 121 and 122 may be made of ceramic. In some examples, at least one of the first and second dielectric layers 121 and 122 is zirconia (ZrO2), beryllium oxide (BeO), aluminum oxide (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), or silicon nitride (Si3N4). Alternatively, it may include aluminum titanate (Al2TiO5). In some examples, at least one of the first and second dielectric layers 121 and 122 may include yttrium oxide (Y2O3) or yttrium oxide (YOF).

In some examples, the coefficient of thermal expansion of zirconia is approximately 11 x 10 ^-6 . In some examples, the coefficient of thermal expansion of beryllium oxide is approximately 8 x 10 ^-6 . In some examples, the coefficient of thermal expansion of aluminum oxide is approximately 7.3 x 10 ^-6 . In some examples, the coefficient of thermal expansion of aluminum nitride is approximately 4.4 x 10 ^-6 . In some examples, the coefficient of thermal expansion of silicon carbide is approximately 3.7 x 10 ^-6 . In some examples, the coefficient of thermal expansion of aluminum nitride is approximately 3.4 x 10 ^-6 . In some examples, the coefficient of thermal expansion of aluminum titanate is approximately 1 x 10 ^-6 . In some examples, the coefficient of thermal expansion of yttrium oxide and yttrium bicarbonate is from approximately 10 to approximately 10.5 x 10 ^-6 .

In some examples, the base member 110 and/or support member 120 may be provided in a substantially square shape when viewed from the top when used for display glass or approximately circular when viewed from the top when used as a semiconductor wafer. It can be provided in the form

In some examples, when an electrostatic chuck is used for display manufacturing, the length of one side of the support member 120 may be approximately 400 mm to approximately 3500 mm. In some examples, when the electrostatic chuck is used for semiconductor manufacturing, the diameter of support member 120 may be approximately 100 mm to approximately 400 mm.

In some examples, electrostatic chucks may be used in a temperature range of approximately 200°C to approximately 800°C. In some examples, the standard deviation of the coefficient of thermal expansion between base member 110 and support member 120 may be approximately 0.01% to approximately 10%. Therefore, in the range of approximately 200°C to approximately 800°C, which is the operating temperature of the electrostatic chuck, the warping phenomenon due to the difference in thermal expansion coefficient between the base member 110 and the support member 120 can be minimized, and thus electrostatic discharge in a high temperature environment. Excellent flatness of the chuck can be maintained.

In some examples, when the base member 110 is provided as pure titanium (CTE: 8.6) and the first and second dielectric layers 121 and 122 constituting the support member 120 are provided as beryllium oxide (CTE: 8), The standard deviation of CTE may be approximately 0.4%. In some examples, when the base member 110 is provided as pure titanium (CTE: 8.6) and the first and second dielectric layers 121 and 122 constituting the support member 120 are provided as aluminum oxide (CTE: 7.3), The standard deviation of CTE may be approximately 0.9%.

In some examples, when the base member 110 is provided as a titanium alloy (CTE: 9.4) and the first and second dielectric layers 121 and 122 constituting the support member 120 are provided as beryllium oxide (CTE: 8), The standard deviation of CTE may be approximately 1%. In some examples, when the base member 110 is provided as titanium alloy (CTE: 9.4) and the first and second dielectric layers 121 and 122 constituting the support member 120 are provided as aluminum oxide (CTE: 7.3), The standard deviation of CTE may be approximately 1.5%.

In some examples, when the base member 110 is provided as titanium alloy (CTE: 9.4) and the first and second dielectric layers 121 and 122 constituting the support member 120 are provided as yttrium oxide (CTE: 10), The standard deviation of CTE may be approximately 1.9%.

In this way, even if the electrostatic chuck according to the present disclosure is used in a high temperature environment of approximately 200°C to approximately 800°C, the standard deviation of the thermal expansion coefficient between the base member 110 and the support member 120 is less than approximately 2%. , bending phenomenon rarely occurs and excellent flatness can be maintained.

Meanwhile, as in the related art, when the base member 110 is provided as aluminum (CTE: 23) and the first and second dielectric layers (121, 122) constituting the support member 120 are provided as aluminum oxide (CTE: 7.3), The standard deviation of CTE is approximately 11%. In this case, when the electrostatic chuck is used in the above-described high-temperature environment, a large bending phenomenon occurs due to the difference in CTE between the base member 110 and the support member 120, and thus the flatness deteriorates, resulting in glass for displays or wafers for semiconductors. The electrostatic chuck cannot be fixed with strong force.

2A to 2D are schematic diagrams showing a method of manufacturing an exemplary coating-type high-temperature electrostatic chuck 100 according to the present disclosure.

FIG. 2A illustrates the initial stages of manufacturing an exemplary coating-type high-temperature electrostatic chuck 100 according to the present disclosure. A base member 110 may be provided with a plurality of cooling lines 111 in the lower area 112 and a plurality of heating lines 113 in the upper area 114. In some examples, base member 110 may be provided from pure titanium or titanium alloy.

FIG. 2B illustrates a later stage of manufacturing an exemplary coated type high temperature electrostatic chuck 100 according to the present disclosure. The first dielectric layer 121 may be directly coated on the base member 110. In some examples, aluminum oxide powder may be coated on the base member 110 using an atmospheric pressure plasma spray method. Accordingly, there is no bonding layer between the base member 110 and the first dielectric layer 121, and the first dielectric layer 121 can be provided directly on the base member 110. In the drawing, an unexplained reference numeral 150 is a powder spray nozzle.

FIG. 2C illustrates a later stage of manufacturing an exemplary coated type high temperature electrostatic chuck 100 according to the present disclosure. An electrode layer 123 may be provided on the first dielectric layer 121. The electrode layer 123 may also be provided by a plating method or the various spray methods described above. The electrode layer 123 may include tungsten (W) and/or titanium (Ti).

FIG. 2D illustrates a later stage of manufacturing an exemplary coated type high temperature electrostatic chuck 100 according to the present disclosure. The second dielectric layer 122 may be directly coated on the first dielectric layer 121 and the electrode layer 123. In some examples, aluminum oxide powder may be coated on the first dielectric layer 121 and the electrode layer 123 using an atmospheric pressure plasma spray method. Here, the first dielectric layer 121, the electrode layer 123, and the second dielectric layer 122 may be defined or referred to as the support member 120.

In this way, the base member 110 includes titanium and the support member 120 includes aluminum oxide, so that the standard deviation of the thermal expansion coefficient of the base member 110 and the support member 120 is less than approximately 2%. Accordingly, even when the electrostatic chuck is used in a high temperature environment of approximately 200°C to approximately 800°C, bending of the base member 110 and the support member 120 rarely occurs and excellent flatness is maintained. Therefore, the fixing force of the glass or wafer by the electrostatic chuck can be maintained excellently.

3A to 3C are cross-sectional views showing other exemplary coating-type high-temperature electrostatic chucks (200A, 200B, and 200C) according to the present disclosure.

As shown in FIGS. 3A to 3C, other exemplary coating type high temperature electrostatic chucks (200A, 200B, and 200C) according to the present disclosure, in particular, the base member 110 has a cooling line 111 (lower region or cooling It may further include heat blocking areas 230A, 230B, and 230C interposed between the area 112) and the heating line 113 (upper area or heating area 114).

In some examples, lower region 112 may be maintained at a temperature of approximately 60°C due to cooling lines 111 and upper region 114 may be maintained at a temperature of approximately 600°C due to heating lines 113. . However, if the lower region 112 and the upper region 114 are directly connected, heat energy is exchanged between them, so more energy is input to maintain the set temperature of the lower region 112 and the upper region 114, respectively. Needs to be.

However, as described above, when the heat blocking areas 230A, 230B, and 230C are interposed between the cooling line 111 and the heating line 113, the heat energy is transferred between the cooling line 111 and the heating line 113. Since the flow is blocked, more energy can be input to maintain the set temperatures of the lower region 112 and the upper region 114, respectively.

In some examples, the thermal barrier regions 230A, 230B, and 230C include a cavity or a cavity and an insulating material filled therein (e.g., airgel, perlite, foamed glass, mineral wool, glass wool, etc.). It can be included.

In the electrostatic chuck 200A shown in FIG. 3A, one heat blocking area 230A may be provided horizontally between the cooling line 111 and the heating line 113. In the electrostatic chuck 200B shown in FIG. 3B, a plurality of heat blocking areas 230B may be provided in a horizontal direction between the cooling line 111 and the heating line 113. In the electrostatic chuck 200C shown in FIG. 3C, a plurality of heat blocking areas 230C are provided in the horizontal direction between the cooling line 111 and the heating line 113, and the lower area 112 and the upper area 114 ) may be connected to each other through the connection area 115 between the heat blocking areas 230C.

In this way, the present disclosure further provides heat blocking areas 230A, 230B, and 230C between the cooling line 111 and the heating line 113, thereby increasing the set temperature of the lower area 112 by the cooling line 111. Relatively little energy (eg, electrical energy) is required to maintain the set temperature of the upper region 114 by the maintenance and heating line 113.

Figure 4 is a cross-sectional view showing another exemplary coating type high temperature electrostatic chuck 300 according to the present disclosure.

In the example shown in FIG. 4 , another exemplary coating type high temperature electrostatic chuck 300 according to the present disclosure may further include a heat diffusion region 340 interposed between the base member 110 and the support member 120. there is.

In some examples, since the heating lines 113 are arranged at a predetermined pitch, the upper region 114 of the base member 110 may have a temperature difference for each region. For example, the temperature of an area close to the heating line 113 may be relatively high, and the temperature of an area far from the heating line 113 may be relatively low.

A heat diffusion area 340 may be provided on the base member 110 . In some examples, the heat diffusion region 340 is interposed between the upper region 114 where the heating line 113 is provided and the support member 120, thereby reducing the temperature difference between regions. In some examples, heat diffusion area 340 may be provided from a material that has a higher thermal conductivity than that of base member 110 . In some examples, heat spreading region 340 may be provided from silicon carbide, aluminum nitride, metal-ceramic composite (MMC), silicon carbide-aluminum, or silicon carbide-silicon. In some examples, the thermal conductivity (in W/mK) of heat spreading region 340 may be higher than approximately 100. For example, the thermal conductivity of silicon carbide is approximately 190, and the thermal conductivity of aluminum nitride is approximately 275. Here, when the base member 110 is provided with pure titanium or titanium alloy, the thermal conductivity is approximately 17.

Accordingly, by providing the heat diffusion region 340 with high thermal conductivity on the base member 110 with low thermal conductivity, the temperature deviation with respect to the upper region 114 of the base member 110 due to the heating line 113 is reduced. , it is possible to maintain a uniform temperature throughout the upper region 114 provided on the base member 110. In other words, the temperature of the support member 120 that secures the glass or wafer is made uniform without region-by-region variation, so various problems (differences in deposition or etch rates depending on temperature) due to temperature variation in the manufacturing process do not occur. .

What has been described above is only one example for carrying out the coating-type high-temperature electrostatic chuck according to the present invention, and the present invention is not limited to the above-described embodiment, and as claimed in the following patent claims, the present invention Without departing from the gist, anyone with ordinary knowledge in the field to which the invention pertains will say that the technical spirit of the present invention exists to the extent that various modifications can be made.

100.200,300; Coated type high temperature electrostatic chuck
110; base member 111; cooling line
112; subarea 113; heating line
114; upper area 120; support member
121; first dielectric layer 122; second dielectric layer
123; electrode layer 150; spray nozzle
230; thermal break area 340; heat diffusion area

Claims (10)

In the coating type high temperature electrostatic chuck,
base member; and
A support member consisting of a first dielectric layer coated directly on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer,
The base member is
Cooling line formed in the lower area;
Heating line formed in the upper area; and
A cavity is provided between the lower region and the upper region, and a heat shield region is formed by filling the inside of the cavity with an insulating material,
The coating-type high-temperature electrostatic chuck is used in a temperature range of 200°C to 800°C, and the thermal conductivity of the heat shield area is constant and does not change during the entire use process of the coating-type high-temperature electrostatic chuck, so that the cooling line temperature of the lower area and the upper area are constant. A coated type high-temperature electrostatic chuck whose heating line temperature remains constant and does not change. In the coating type high temperature electrostatic chuck,
base member;
A support member consisting of a first dielectric layer coated directly on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer; and
Comprising a heat diffusion area interposed between the base member and the support member,
The base member is
Cooling line formed in the lower area;
Heating line formed in the upper area; and
It includes a heat shielding area provided with a cavity between the lower area and the upper area,
The coating-type high-temperature electrostatic chuck is used in a temperature range of 200°C to 800°C, and the thermal conductivity of the heat shield area is constant and does not change during the entire use process of the coating-type high-temperature electrostatic chuck, so that the cooling line temperature of the lower area and the upper area are constant. A coated type high-temperature electrostatic chuck whose heating line temperature does not change and remains constant. In the coating type high temperature electrostatic chuck,
base member;
A support member consisting of a first dielectric layer coated directly on the base member without a bonding layer, an electrode layer formed on the first dielectric layer, and a second dielectric layer coated on the first dielectric layer and the electrode layer; and
Comprising a heat diffusion area interposed between the base member and the support member,
The base member is
Cooling line formed in the lower area;
Heating line formed in the upper area; and
A cavity is provided between the lower region and the upper region, and a heat shield region is formed by filling the inside of the cavity with an insulating material,
The coating type high temperature electrostatic chuck is used in a temperature range of 200°C to 800°C, and the thermal conductivity of the heat shield area is constant and does not change during the entire use process of the coating type high temperature electrostatic chuck, so that the cooling line temperature of the lower area and the upper area are constant. A coated type high-temperature electrostatic chuck whose heating line temperature remains constant and does not change. delete The method according to any one of claims 1 to 3,
A coating type high temperature electrostatic chuck, wherein the base member and the support member are square or circular when viewed from the top. The method according to any one of claims 1 to 3,
A coated type high temperature electrostatic chuck, wherein the length of one side of the support member is 400 mm to 3500 mm, or the diameter of the support member is 100 mm to 400 mm. The method according to any one of claims 1 to 3,
A coating-type high-temperature electrostatic chuck in which the first dielectric layer is directly coated on the base member using an atmospheric pressure plasma spray method. The method according to any one of claims 1 to 3,
A coating-type high-temperature electrostatic chuck, wherein the second dielectric layer is directly coated on the electrode layer and the first dielectric layer using an atmospheric pressure plasma spray method. According to claim 1,
A coating type high temperature electrostatic chuck, wherein the lower region and the upper region are connected through a connection region provided between the heat shield regions. According to claim 2 or 3,
A coating type high temperature electrostatic chuck, wherein the heat diffusion area includes silicon carbide, aluminum nitride, metal-ceramic composite, silicon carbide-aluminum, or silicon carbide-silicon.