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WO2022109950A1 - 显示基板、显示面板及显示装置 - Google Patents

显示基板、显示面板及显示装置 Download PDF

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Publication number
WO2022109950A1
WO2022109950A1 PCT/CN2020/131927 CN2020131927W WO2022109950A1 WO 2022109950 A1 WO2022109950 A1 WO 2022109950A1 CN 2020131927 W CN2020131927 W CN 2020131927W WO 2022109950 A1 WO2022109950 A1 WO 2022109950A1
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WO
WIPO (PCT)
Prior art keywords
lines
touch
floating
layer
insulating layer
Prior art date
Application number
PCT/CN2020/131927
Other languages
English (en)
French (fr)
Inventor
乔慧娜
陈昀德
何帆
颜俊
崔赢兮
成学佩
孙禄标
彭乐
刘正德
邹雪琳
郭强
Original Assignee
京东方科技集团股份有限公司
重庆京东方显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 重庆京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to CN202080003032.0A priority Critical patent/CN114981763A/zh
Priority to US18/028,082 priority patent/US20240028167A1/en
Priority to PCT/CN2020/131927 priority patent/WO2022109950A1/zh
Priority to GB2305993.4A priority patent/GB2615670A/en
Publication of WO2022109950A1 publication Critical patent/WO2022109950A1/zh

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    • G—PHYSICS
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    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
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    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
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    • H10K59/873—Encapsulations
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
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    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display substrate, a display panel and a display device.
  • An organic electroluminescent (OLED) display device is a display screen based on organic electroluminescent diodes. It has excellent characteristics such as self-luminescence, high contrast, thin thickness, wide viewing angle, fast response speed, can be used for flexible panels, wide operating temperature range, simple structure and process, etc. It has attracted more and more attention and has application prospects. broad.
  • the touch function can be integrated by using an embedded touch structure in the OLED display module, so as to realize the integration of the display function and the touch function of the OLED display device.
  • an embodiment of the present disclosure provides a display substrate, including:
  • the base substrate comprising a display area and a non-display area on one side of the display area;
  • an encapsulation dam located in the non-display area and arranged around the display area;
  • an organic insulating layer located on the base substrate;
  • the organic insulating layer has a groove structure, and the groove structure is located on a side of the packaging dam away from the display area;
  • the touch control structure located on a side of the organic insulating layer away from the base substrate; the touch control structure includes a plurality of touch lines extending to the non-display area;
  • the inorganic insulating layer located on the base substrate; the inorganic insulating layer has a hollow structure on the side of the packaging dam away from the display area, the hollow structure covers the groove structure and is connected with the multiple The orthographic projections of the touch lines do not overlap each other.
  • the touch control structure further includes: a plurality of touch electrodes and a plurality of bridges located in the display area; wherein,
  • Each of the touch lines includes: a first subsection disposed on the same layer as the plurality of touch electrodes, and a second subsection disposed in the same layer as the plurality of bridge portions and electrically connected to the first subsection branch;
  • the plurality of touch electrodes are electrically connected to the plurality of touch lines, and each of the bridge portions is electrically connected to two of the touch electrodes correspondingly;
  • the inorganic insulating layer is located between the layer where the plurality of touch electrodes are located and the layer where the plurality of bridging portions are located.
  • the plurality of bridge portions are located between the layer where the plurality of touch electrodes are located and the organic insulating layer.
  • the above-mentioned display substrate provided by the embodiments of the present disclosure further includes: at least one floating line located in the non-display area; wherein the plurality of touch lines can be divided into at least one group touch lines, the at least one floating line is located in at least one side of the two side edges of the at least one group of touch lines.
  • the plurality of touch lines may be divided into two groups of touch lines, the at least one floating line is a plurality, and the plurality of floating lines The empty lines are respectively located in the two edges of each group of touch lines.
  • each group of the touch lines is arranged along a first direction and extends along a second direction, the first direction and the second direction intersect, and the plurality of touch lines
  • the floating lines are respectively located in two side edges in the first direction of each group of touch lines.
  • the plurality of floating lines are disposed on at least one layer of the layer where the plurality of touch electrodes are located and the layer where the plurality of bridging portions are located .
  • the plurality of floating lines include: a plurality of first floating lines disposed in the same layer as the plurality of touch electrodes, and a plurality of second floating lines arranged on the same layer of the plurality of bridge parts; wherein,
  • the part of the region where the first floating line is located is located between the remaining part of the region where the first floating line is located and the touch lines between the regions.
  • the number of the first floating lines in the remaining part is greater than the number of the first floating lines in the part.
  • the orthographic projection of the plurality of second floating lines on the base substrate is the same as the orthographic projection of the part of the first floating lines The projections are completely coincident.
  • the orthographic projection of the part of the first floating line on the base substrate is located within the orthographic projection of the inorganic insulating layer;
  • an orthographic projection of a part of the structure in at least one of the remaining part of the first floating lines on the base substrate overlaps with the hollow structure and does not overlap with the groove structure, Another part of the structure and the hollow structure do not overlap each other.
  • a first distance between two adjacent floating lines and a distance between two adjacent touch lines in the first direction, a first distance between two adjacent floating lines and a distance between two adjacent touch lines.
  • the second distance and the third distance between the adjacent floating lines and the touch lines are the same.
  • the first spacing, the second spacing, and the third spacing are 4 ⁇ m-25 ⁇ m.
  • the plurality of floating lines extend from an edge of the plurality of touch lines close to one side of the display area to a distance between the plurality of touch lines and the plurality of touch lines. The end of the touch line on the side away from the display area is flush.
  • the number of the plurality of floating lines on both sides of each set of the touch lines is the same.
  • the plurality of touch lines include a plurality of touch driving lines and a plurality of touch sensing lines;
  • the plurality of touch electrodes include: a plurality of touch driving electrodes arranged in a first direction, and a plurality of touch sensing electrodes arranged in a second direction;
  • Each of the touch driving lines is electrically connected to a row of the touch driving electrodes
  • each of the touch sensing lines is electrically connected to a row of the touch sensing electrodes.
  • the organic insulating layer includes: a flat layer, and a pixel definition layer on a side of the flat layer away from the base substrate.
  • the flat layer is a single-layer structure or a double-layer structure.
  • an embodiment of the present disclosure provides a display panel including the above-mentioned display substrate provided by an embodiment of the present disclosure.
  • an embodiment of the present disclosure provides a display device including the above-mentioned display panel provided by an embodiment of the present disclosure.
  • FIG. 1 is a schematic structural diagram of a display panel in the related art
  • Fig. 2 is a cross-sectional structure schematic diagram along line I-II in Fig. 1;
  • Fig. 3 is the enlarged structural schematic diagram of P region in Fig. 1;
  • Fig. 4 is a schematic cross-sectional structure along line III-IV in Fig. 3;
  • FIG. 5 is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure.
  • Fig. 6 is a kind of enlarged structural representation of Q region in Fig. 5;
  • Fig. 7 is a kind of enlarged structural schematic diagram of Z region in Fig. 6;
  • Fig. 8 is a cross-sectional structure schematic diagram along line V-VI in Fig. 7;
  • Fig. 9 is another kind of enlarged structural schematic diagram of Z region in Fig. 6;
  • Fig. 10 is a kind of sectional structure schematic diagram along line VII-VIII in Fig. 9;
  • Fig. 11 is another kind of sectional structure schematic diagram along line VII-VIII in Fig. 9;
  • Fig. 12 is another kind of enlarged structural schematic diagram of Q region in Fig. 5;
  • Fig. 13 is a kind of sectional structure schematic diagram along IX-XI line among Fig. 5;
  • Fig. 14 is another kind of sectional structure schematic diagram along IX-XI line among Fig. 5;
  • Fig. 15 is a kind of sectional structure schematic diagram along the line XII-XIII in Fig. 12;
  • FIG. 16 is a schematic diagram of a cross-sectional structure along the line E-F in FIG. 12 .
  • the mainstream small-size OLED products on the market are large-angle bending products equipped with a touch structure (TSP) process inside.
  • TSP touch structure
  • the touch structure is in contact with the encapsulation layer of the OLED display module in the display area, and the frame area around the display area is in contact with the OLED display module.
  • the organic insulating layer 101 disposed on the whole surface is in contact with the touch structure, and the touch structure includes a plurality of touch lines 102, a plurality of touch electrodes 103 and a plurality of bridge parts 104, and a plurality of bridge parts at the layer where the plurality of touch electrodes 103 are located.
  • the inorganic insulating layer 105 is arranged on the whole surface between the layers where 104 is located.
  • a groove structure C needs to be provided in the organic insulating layer 101 in the frame region.
  • the adhesion of the organic insulating layer 101 (as shown in FIG.
  • an embodiment of the present disclosure provides a display substrate, as shown in FIG. 5 and FIG. 6 , including:
  • a base substrate 100, the base substrate 100 includes a display area AA, and a non-display area BB located on one side of the display area AA;
  • the encapsulation dam 106 is located in the non-display area BB and is arranged around the display area AA;
  • the organic insulating layer 101 is located on the base substrate 100; the organic insulating layer 101 has a groove structure C, and the groove structure C is located on the side of the packaging dam 106 away from the display area AA;
  • the touch structure is located on the side of the organic insulating layer 101 away from the base substrate 100; the touch structure includes a plurality of touch lines 102 extending to the non-display area BB;
  • the inorganic insulating layer 105 is located on the base substrate 100 ; the inorganic insulating layer 105 has a hollow structure H on the side of the packaging dam 106 away from the display area AA, and the hollow structure H covers the groove structure C and is connected with the plurality of touch lines 102 The orthographic projections do not overlap each other.
  • the hollow structure H covering the groove structure C contained in the organic insulating layer 101 is provided in the inorganic insulating layer 105, so that the pattern of the inorganic insulating layer 105 does not exist in the region where the groove structure C is located , so that the inorganic insulating layer 105 with greater stress is prevented from wrinkling or detaching at the groove structure C; and the hollow structure H does not cover the touch wire 102, so that the inorganic insulating layer 105 located at the touch wire 102 can keep the touch
  • the control wire 102 has better adhesion. Therefore, the present disclosure effectively improves the product yield and ensures the touch effect.
  • the length and/or width of the hollow structure H are respectively greater than the length and/or width of the groove structure C.
  • a plurality of hollow structures H covering the respective groove structures C may be provided in the inorganic insulating layer 105 .
  • the length and/or width is greater than the length and/or width of the corresponding groove structure C; in other embodiments, a hollow structure H can also be set to cover a plurality of groove structures C at the same time.
  • the length and/or width needs to be greater than the sum of the lengths and/or the widths of the plurality of groove structures C.
  • the boundary distance between the hollow structure H and the side of the packaging dam 106 away from the display area AA is greater than the width of the groove structure C, and/or smaller than the length of the groove structure C.
  • the ratio of the length to the width of the groove structure C is between about 20:1 and about 200:1. In other embodiments, the ratio of the length to the width of the groove structure C may be about 22:1, about 169:1, and about 185:1. It will be understood that the approximate value herein refers to the tolerance within the allowable process and measurement range, and is not strictly limited, and may vary within a fluctuation of 10%.
  • the ratio of the width to the depth of the groove structures C is between about 5:1 and about 20:1. In other embodiments, the ratio of the width to the depth of the groove structure C may be 13.5:1. In some embodiments, the groove structure C has a width of about 55 ⁇ m, a depth of about 4 ⁇ m, and a length of about 1235 ⁇ m, 9300 ⁇ m, or 10200 ⁇ m.
  • the boundary distance between the hollow structure H and the side of the encapsulation dam 106 away from the display area AA ie, the shortest distance between the encapsulation dam 106 and the boundary of the inorganic insulating layer 105 ) is about 165 ⁇ m, and the depth is about 0.53 ⁇ m.
  • the furthest distance of the encapsulation dam 106 from the boundary of the inorganic insulating layer 105 is about 515 ⁇ m.
  • the touch control structure may further include: a plurality of touch electrodes 103 and a plurality of bridges located in the display area AA 104; of which,
  • Each touch line 102 includes: a first subsection 1021 disposed on the same layer as the plurality of touch electrodes 103 , and a second subsection 1022 disposed in the same layer as the plurality of bridge portions 104 and electrically connected to the first subsection 1021 ;
  • the plurality of touch electrodes 103 are electrically connected to the plurality of touch lines 102, and each bridge portion 104 is electrically connected to the two touch electrodes 103 correspondingly;
  • the inorganic insulating layer 105 is located between the layer where the touch electrodes 103 are located and the layer where the bridging portions 104 are located.
  • the touch wire 102 By setting the touch wire 102 as a double-layer wire including the first sub-section 1021 and the second sub-section 1022, after one layer of the wire is partially broken, the touch electrodes can still be connected to the touch electrode through the other layer of wire. 103 loads the signal, thus effectively solving the problem that the single-layer wiring breakage easily leads to touch failure.
  • the first sub-portion 1021 and the second sub-portion 1022 are electrically connected through a via hole passing through the inorganic insulating layer 105.
  • the touch-control structure can be not only the above-mentioned mutual capacitance structure, but also a self-capacitance structure.
  • the touch structure when the touch structure is a self-capacitance structure, the touch structure may include a plurality of self-capacitance electrodes disposed in different layers from the plurality of touch lines 102 , and the inorganic insulating layer 105 is located at the layer where the plurality of touch lines 102 are located and the plurality of touch lines 102 are located. Between the layers where the self-capacitance electrodes are located, each touch line 102 is electrically connected to a self-capacitance electrode through a via hole penetrating the inorganic insulating layer 105 .
  • the following description takes the touch structure as the mutual capacitance structure as an example for description.
  • the plurality of bridge portions 104 may be located between the layers where the plurality of touch electrodes 103 are located and the organic insulating layer 101 , that is, the layers where the plurality of bridge portions 104 are located,
  • the inorganic insulating layer 105 and the layers where the plurality of touch electrodes 103 are located are sequentially stacked and disposed on the side of the organic insulating layer 101 away from the base substrate 100 .
  • the plurality of bridges 104 may also be located on the side of the layer where the plurality of touch electrodes 103 are located away from the organic insulating layer 101 .
  • the layer where the plurality of touch electrodes 103 are located, the inorganic insulating layer 105 and the The layers where the bridging portion 104 is located are sequentially stacked and disposed on the side of the organic insulating layer 101 away from the base substrate 100 .
  • the following description is given by taking the example that the plurality of bridging portions 104 are located between the layers where the plurality of touch electrodes 103 are located and the organic insulating layer 101 .
  • the positions of all the groove structures C are approximately on a straight line.
  • the first groove structure C1 and the sixth groove structure C6 are located on both sides of the whole of the two groups of touch lines 102 , the second groove structure C2 and the third groove structure C6
  • the structure C3 , the fourth groove structure C4 , and the fifth groove structure C5 are located in the middle of the two groups of touch lines 102 .
  • the width and/or depth of the groove structures C are substantially the same.
  • the outermost groove structures C eg, the first groove structure C1 and the sixth groove structure C6 ) are the smallest in length.
  • the length of the groove structures C (eg, the second groove structure C2 and the fifth groove structure C5 ) close to the two sets of touch lines 102 is greater than the length of the grooves farther from the two sets of touch lines 102 .
  • the length of the groove structure C (eg, the third groove structure C3 and the fourth groove structure C4).
  • the width of each groove structure C is symmetrical with respect to a virtual center line MN.
  • the above-mentioned display substrate provided by the embodiments of the present disclosure may further include: at least one floating line 107 located in the non-display area BB;
  • the control lines 102 can be divided into at least one group of touch lines 102 , and the at least one floating line 107 is located in at least one side of the two side edges of the at least one group of touch lines 102 .
  • the plurality of touch lines 102 may form only one group, and in other embodiments, the plurality of touch lines 102 may be divided into two groups, which may be determined according to the frame size of the actual product and the number of touch lines 102 Make reasonable settings, and no specific restrictions are made here.
  • the inorganic insulating layer 105 located at the edge of each set of touch lines 102 is prone to wrinkles or even separates from the organic insulating layer 101 , by arranging the floating lines 107 at the edge of each set of touch lines 102 , the inorganic insulating layer can be effectively suppressed
  • the detachment phenomenon of the 105 extends to the area where the touch line 102 is located, resulting in poor touch control.
  • the plurality of touch lines 102 can be divided into two groups of touch lines 102 , and the above-mentioned at least one floating line 107 In the case of multiple, multiple floating lines 107 may be respectively located in the two side edges of each group of touch lines 102 .
  • the floating lines 107 By arranging the floating lines 107 at the two edges of each set of touch lines 102 , the detachment phenomenon of the inorganic insulating layer 105 can be more effectively prevented from extending to the area where the touch lines 102 are located, resulting in poor touch control.
  • each group of touch lines 102 is arranged along the first direction X and extends along the second direction Y, and the first direction X and the first direction The two directions Y intersect, and the plurality of floating lines 107 are located in the two edges of each group of touch lines 102 in the first direction X, respectively. Since the inorganic insulating layers 105 on both sides of each set of touch lines 102 are prone to wrinkle or even separate from the flat layer 101 , by arranging the floating lines 107 on both sides of each set of touch lines 102 , inorganic insulating layers 107 can be effectively inhibited. The separation phenomenon of the insulating layer 105 extends to the area where the touch lines 102 are located, resulting in poor touch control.
  • the floating line 107 in order to prevent the floating line 107 from interfering with the signal on the touch line 103 , the floating line 107 may be set not to be connected to any signal.
  • a plurality of floating lines 107 may be arranged in each group of touch controls. The number on both sides of the line 102 is the same, as shown in FIGS. 7 and 9 .
  • the plurality of floating lines 107 may have a single-layer or double-layer structure, and the film layer structure thereof may be different from that of multiple floating lines 107 .
  • At least one of the layers where the touch electrodes 103 are located and the layers where the plurality of bridging portions 104 are located are the same layer and of the same material.
  • the inorganic insulating layer 105 is located between the layer where the touch electrodes 103 are located and the layer where the bridging portions 104 are located. Therefore, the floating lines 107 can be provided in the layer where the touch electrodes 103 are located or the layer where the bridging portions 104 are located.
  • the detachment of the inorganic insulating layer 106 is effectively suppressed, and the floating lines 107 are arranged in the layers where the plurality of touch electrodes 103 and the layers where the plurality of bridging portions 104 are located, so that the double-layer reinforcement effect on the inorganic insulating layer 105 can be realized, thereby Detaching of the inorganic insulating layer 105 is better prevented.
  • each of the plurality of floating lines 107 is connected to a plurality of bridge parts
  • the orthographic projection of the plurality of floating lines 107 on the base substrate 100 is located in the orthographic projection of the inorganic insulating layer 105; as shown in FIG. 9 and FIG.
  • the orthographic projection of some of the floating lines 107 on the base substrate 100 is located in the orthographic projection of the inorganic insulating layer 106 , and the orthographic projection of the rest of the floating lines 107 on the base substrate 100 is the same as the orthographic projection of the rest of the floating lines 107 .
  • the orthographic projections of the hollow structure H overlap each other and do not overlap with the orthographic projections of the groove structure C; as shown in FIG. 9 and FIG.
  • the plurality of floating lines 107 include: When the plurality of first floating lines 1071 disposed in the same layer and the plurality of second floating lines 1072 disposed in the same layer as the plurality of bridge portions 104 are located, part of the first floating lines are in the direction perpendicular to the base substrate 100 .
  • the lines 1071 are arranged corresponding to all the second floating lines 1072 , and the rest of the first floating lines 1071 and all the second floating lines 1072 do not overlap each other.
  • the region where the above-mentioned part of the first floating line 1071 is located may be located in the remaining part of the above-mentioned first floating line.
  • double-layer floating lines (respectively part of the first floating lines 1071 and all of the second floating lines 1072 ) are set in the area close to the touch lines 102 .
  • only a single-layer floating line (ie, the remaining part of the first floating line 1072 ) is set in the area away from the touch line 102 .
  • the number of the rest of the first floating lines 1072 contained in the single-layer floating line may be greater than the number of the first floating lines 1071 contained in the double-layer floating line.
  • the orthographic projection of part of the first floating lines 1071 on the base substrate 100 is located in the orthographic projection of the inorganic insulating layer 105 ; the remaining part of the first floating line
  • the orthographic projection of a part of the structure in at least one of the lines 1071 on the base substrate 100 overlaps with the hollow structure H and does not overlap with the groove structure C, and another part of the structure does not overlap with the hollow structure H.
  • the orthographic projection of some of the first floating lines 1071 on the base substrate 100 may be set to The orthographic projections of all the second floating lines 1072 are substantially coincident.
  • substantially completely coincident means that the first floating line 1071 just covers the corresponding second floating line 1072, or the first floating line 1071 blocks most of the corresponding second floating line 1072 (for example, occlusion 90%-99%).
  • the orthographic projections of some of the first floating lines 1071 on the base substrate 100 are completely coincident with the orthographic projections of all the second floating lines 1072 .
  • At least one of the remaining first floating lines 1072 has a partial structure and an overlapping area with the inorganic insulating layer 105 , and another part of the structure connected to each other has no overlapping area with the inorganic insulating layer 105 , that is, in the hollow structure H.
  • At least one of the remaining part of the first floating lines 1072 described above has a smooth step difference from the carrier with the inorganic insulating layer 105 to the carrier without the inorganic insulating layer 105, which can further increase the floating line 107 and the hollow structure H lower film layer and the adhesion of the inorganic insulating layer 105 .
  • the first distance d 1 of two adjacent floating lines 107 in the first direction X, the first distance d 1 of two adjacent floating lines 107 , the phase The second distance d 2 between the adjacent two touch lines 102 and the third distance d 3 between the adjacent floating lines 107 and the touch lines 102 are the same.
  • the first pitch d 1 , the second pitch d 2 and the third pitch d 3 may be 4 ⁇ m-25 ⁇ m, such as 4 ⁇ m, 5 ⁇ m, 6 ⁇ m, 7 ⁇ m, 8 ⁇ m, 9 ⁇ m, 10 ⁇ m, 11 ⁇ m, 12 ⁇ m, 13 ⁇ m, 14 ⁇ m, 15 ⁇ m, 16m, 17 ⁇ m, 18 ⁇ m, 19 ⁇ m, 20 ⁇ m, 21 ⁇ m, 22 ⁇ m, 23 ⁇ m, 24 ⁇ m, 25 ⁇ m, etc.
  • the floating lines 107 are fabricated by the same process of fabricating the touch lines 102 , so as to ensure process uniformity and avoid adverse effects on the touch lines 102 caused by process fluctuations caused by fabricating the floating lines 107 .
  • a plurality of floating lines 107 extend from a plurality of touch lines 102 close to the display area AA side.
  • the edge extends to be flush with the end of the plurality of touch lines 102 on the side away from the display area AA.
  • the plurality of floating lines 107 and the plurality of touch lines 102 all cross the package dam 106 , and the ends of the two sides away from the display area AA and the lower edge of the inorganic insulating layer 105 adjacent to the bending area PB The boundaries are flush, as shown in Figure 6.
  • the floating wire 107 can be made longer, so that the bending resistance of the floating wire 107 can be improved, and the reinforcement effect on the inorganic insulating layer 106 can be better achieved.
  • the remaining part of the first floating line 1071 that is in direct contact with the organic insulating layer 101 in the area outside the groove structure C covered by the hollow structure H extends to the edge of the plurality of touch lines 102 away from the display area AA
  • the The rest of the first floating lines 1071 are in direct contact with the inorganic insulating layer 105 at the edge of the plurality of touch lines 102 on the side away from the display area AA, thereby increasing the adhesion between the inorganic insulating layer 105 and the organic insulating layer 101 force, further improving the reinforcement effect on the inorganic insulating layer 105 .
  • the plurality of touch lines 102 may specifically include a plurality of touch driving lines 102 a and a plurality of touch sensing lines 102 b;
  • the plurality of touch electrodes 103 may specifically include: a plurality of touch driving electrodes 1031 arranged in the first direction X, and a plurality of touch sensing electrodes 1032 arranged in the second direction Y;
  • Each touch driving line 102 a is electrically connected to a row of touch driving electrodes 1031
  • each touch sensing line 102 b is electrically connected to a row of touch sensing electrodes 1032 .
  • the organic insulating layer 101 may include: a flat layer 1011 , and a pixel definition on the side of the flat layer 1011 away from the base substrate 100 .
  • the flat layer 1011 may be a single-layer structure as shown in FIG. 13 , or may be a double-layer structure as shown in FIG. 14 .
  • the flattening layer 1011 when it has a double-layer structure, it may include a first flattening layer 1011a and a second flattening layer 1011b, as shown in FIG. 14 .
  • the encapsulation dam 106 may include: a protection part provided on the flat layer 1011 and a blocking part provided on the pixel definition layer 1012 .
  • the organic insulating layer 101 may further include: a spacer layer 1013 on the side of the pixel defining layer 1012 away from the flat layer 1011 .
  • the encapsulation dam 106 may include: a protection portion provided on the flat layer 1011 , a blocking portion provided on the pixel defining layer 1012 , and a support portion provided on the spacer layer 1013 .
  • the encapsulation dam is not limited to the above-mentioned film layer structure, and may include at least one layer structure disposed in the same layer as the film layer in the display area.
  • the encapsulation dam may include at least one, for example, may be two or more.
  • the composition of the film layers of each encapsulation dam can be the same or different, the number of film layers can be the same or different, and the heights can be the same or different.
  • the groove structure C may be formed on the pixel defining layer 1012 and the first flat layer 1011a to expose part of the surface of the second flat layer 1011b, or may be further formed on the second flat layer 1011b.
  • At least one encapsulation dam 106 may be included in the present disclosure.
  • a groove structure C is also provided between adjacent encapsulation dams 106 .
  • the groove structure C between them is far from the bending region, and does not affect the adhesion between the inorganic insulating layer 106 and the organic insulating layer 101 . Therefore, there is no need to carry out hollow design for the inorganic insulating layer 105 corresponding to the groove structure C between the adjacent encapsulation dams 106 .
  • hollowing out design of the inorganic insulating layer 105 corresponding to the groove structure C between the adjacent encapsulation dams 106 may also be performed according to actual needs, which is not limited herein.
  • the groove structure C in the organic insulating layer 101 is closest to the edge of the side of the display area AA, and the hollow structure H in the inorganic insulating layer 105 is closest to the side of the display area AA
  • the edges are not flush, that is, the two edges form a stepped structure.
  • the end face of the groove structure C in the organic insulating layer 101 closest to the side of the display area AA, and the hollow structure H in the inorganic insulating layer 105 closest to the side of the display area AA The end faces are not flush, that is, the two end faces form a stepped structure.
  • the organic insulating layer 101 has a part of the surface exposed by the inorganic insulating layer 105 on the side of the encapsulation dam 106 away from the display area AA, that is, the inorganic insulating layer 105 not only does not cover the grooves in the organic insulating layer 101
  • the structure C also does not cover part of the organic insulating layer 101 on the side of the groove structure C close to the display area AA.
  • the shortest distance between the encapsulation dam 106 and the boundary of the inorganic insulating layer 105 is smaller than that between the encapsulation dam 106 and the boundary of the organic insulating layer 101 (the boundary on the side of the groove structure C closest to the display area AA) the shortest distance.
  • the shortest distance between the packaging dam 106 and the boundary of the organic insulating layer 101 (the boundary on the side of the groove structure C closest to the display area AA) is smaller than the distance between the packaging dam 106 and the bending area PB closest to the display The shortest distance of the boundary on one side of the area AA.
  • the farthest distance from the encapsulation dam 106 to the boundary of the inorganic insulating layer 105 is greater than the distance from the encapsulation dam 106 to the boundary of the organic insulating layer 101 (the boundary of the groove structure C closest to the side of the display area AA). ) the shortest distance. In some embodiments, the farthest distance of the encapsulation dam 106 from the boundary of the inorganic insulating layer 105 is smaller than the shortest distance of the encapsulation dam 106 from the boundary of the bending area PB closest to the side of the display area AA.
  • the above-mentioned display substrate provided by the embodiments of the present disclosure may further include: a plurality of pixel driving circuits located between the base substrate 100 and the organic insulating layer 101 ,
  • Each pixel circuit may include a transistor and a capacitor, wherein the transistor includes an active layer 108, a gate 109, a source 110 and a drain 111, and the capacitor includes a first capacitor electrode 112 and a second capacitor electrode 113;
  • the display substrate may also include A plurality of light-emitting devices 114 between the organic insulating layer 101 and the layers where the plurality of touch lines 102 are located, each light-emitting device 114 includes an anode 1141, a light-emitting functional layer 1142 and a cathode 1143, specifically, a plurality of pixel driving circuits and a plurality of The light emitting devices 114 are all located in the display area AA, and the plurality of pixel driving circuits are electrically
  • the light-emitting functional layer 1142 may include a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting material layer, a hole-blocking layer, an electron transport layer, and an electron injection layer; wherein the material of the light-emitting material layer may include
  • the small molecular organic material or the polymer molecular organic material can be a fluorescent light-emitting material or a phosphorescent light-emitting material, which can emit red light, green light, blue light, or can emit white light and the like.
  • the anodes 1141 of each light emitting device 114 are isolated from each other by the pixel defining layer 1012, which can be made of ITO (indium tin oxide), indium zinc oxide (IZO), zinc oxide (ZnO) and other materials.
  • the cathode 1143 of each light-emitting device 114 is an integral structure provided on the entire surface, and can be made of metal materials such as lithium (Li), aluminum (Al), magnesium (Mg), and silver (Ag).
  • metal materials such as lithium (Li), aluminum (Al), magnesium (Mg), and silver (Ag).
  • the display substrate may further include: a buffer layer 115 , a first gate insulating layer 116 , a second gate insulating layer 117 , an interlayer dielectric layer 118 , and an encapsulation layer 119 , a passivation layer 120 , and a transfer electrode 121 .
  • the encapsulation layer 119 may include a first inorganic encapsulation layer 1191 , an organic encapsulation layer 1192 and a second inorganic encapsulation layer 1193 .
  • the flat layer 1011 includes at least one layer, for example, two layers (specifically, the first flat layer 1011a and the second flat layer 1011b), and the groove structure C may be It is disposed on the flat layer 1011 farthest from the base substrate 100, and may also be disposed on the first flat layer 1011a and the second flat layer 1012b.
  • a passivation layer 120 may be further included between the interlayer dielectric layer 118 and the flat layer 1011 (or the second flat layer 1012b); the groove structure C may be disposed at the farthest distance
  • the flat layer 1011 of the base substrate 100 may also be disposed on the first flat layer 1011a and the second flat layer 1012b, or may be disposed on the first flat layer 1011a, the second flat layer 1012b and the passivation layer 120 .
  • the inorganic insulating layer 105 provided with the hollow structure H in the present disclosure includes, but is not limited to, the inorganic insulating layer between the layer where the plurality of touch electrodes 103 are located and the layer where the plurality of bridging portions 104 are located, and may also include a first inorganic encapsulation layer 1191 , a second inorganic encapsulation layer 1193, a first gate insulating layer 116, a second gate insulating layer 117, an interlayer dielectric layer 118, and the like.
  • the shortest distance between the light emitting device 114 closest to the non-display area BB and the boundary of the inorganic insulating layer 105 is smaller than the distance between the light emitting device 114 closest to the non-display area BB and the boundary of the organic insulating layer 101 (the groove structure The shortest distance of the border of the side closest to the display area AA in C).
  • the shortest distance from the light emitting device 114 closest to the non-display area BB to the boundary of the organic insulating layer 101 is smaller than the light emitting device closest to the non-display area BB
  • the shortest distance between the device 114 and the boundary of the bending area PB on the side closest to the display area AA is smaller than the light emitting device closest to the non-display area BB.
  • the shortest distance between the pixel driving circuit closest to the non-display area BB and the boundary of the inorganic insulating layer 105 is smaller than the distance between the pixel driving circuit closest to the non-display area BB and the boundary of the organic insulating layer 101 (the groove structure The shortest distance of the border of the side closest to the display area AA in C).
  • the shortest distance between the pixel driving circuit closest to the non-display area BB and the boundary of the organic insulating layer 101 is smaller than that of the pixel closest to the non-display area BB
  • the slope angle ⁇ of the boundary of the organic insulating layer 101 is greater than the slope angle ⁇ of the boundary of the inorganic insulating layer 105 .
  • the slope angle ⁇ of the boundary of the organic insulating layer 101 is about 30°-50°, and the slope angle ⁇ of the boundary of the inorganic insulating layer 105 is about 30°.
  • the slope angle of the boundary of the inorganic insulating layer 105 with the shortest distance from the encapsulation dam 106 is about 70°. In some embodiments, as shown in FIG.
  • the slope angle ⁇ of the organic insulating layer 101 at the boundary of the inorganic insulating layer 105 farthest from the encapsulation dam 106 is greater than the aforementioned slope angle ⁇ , and the distance between the inorganic insulating layer 105 and the encapsulation dam 106
  • the slope angle ⁇ of the farthest boundary may be less than or equal to the slope angle ⁇ of the organic insulating layer 101 there, preferably the slope angle ⁇ is equal to ⁇ .
  • the slope angle ⁇ of the boundary of the organic insulating layer 101 is about 70°
  • the slope angle ⁇ of the boundary of the inorganic insulating layer 105 is between about 60°-70°. In some embodiments, as shown in FIG.
  • the organic insulating layer 101 may be overetched to the side away from the groove structure C to be recessed.
  • “about” means that the values within the allowable error range of the manufacturing process (eg ⁇ 10%) all belong to the protection scope of the present disclosure.
  • an embodiment of the present disclosure further provides a display panel, including the above-mentioned display substrate provided by an embodiment of the present disclosure.
  • the display panel may be an organic electroluminescent display panel (OLED), a quantum dot light emitting display panel (QLED), or a micro light emitting diode display panel (Micro LED). Since the principle of solving the problem of the display panel is similar to the principle of solving the problem of the above-mentioned display substrate, the implementation of the display panel provided by the embodiment of the present disclosure may refer to the implementation of the above-mentioned display substrate provided by the embodiment of the present disclosure, and the repetition will not be repeated. Repeat. Other essential components of the display panel (such as polarizers) should be understood by those of ordinary skill in the art, and will not be repeated here, nor should it be used as a limitation of the present disclosure.
  • OLED organic electroluminescent display panel
  • QLED quantum dot light emitting display panel
  • Micro LED micro light emitting diode display panel
  • an embodiment of the present disclosure further provides a display device, including the above-mentioned display panel provided by an embodiment of the present disclosure.
  • the display device can be: mobile phone, tablet computer, TV, monitor, notebook computer, digital photo frame, navigator, smart watch, fitness wristband, personal digital assistant, and any other product or component with display function.
  • Those of ordinary skill in the art should understand that other essential components of the display device (eg, driver chips) are possessed by those skilled in the art, and will not be repeated here, nor should it be regarded as a limitation of the present disclosure.
  • the implementation of the display device may refer to the above-mentioned embodiment of the display panel, and the repetition will not be repeated.

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Abstract

显示基板、显示面板及显示装置，显示基板包括衬底基板（100），衬底基板（100）包括显示区（AA）、以及位于显示区（AA）一侧非显示区（BB）；封装坝（106），位于非显示区（BB）并围绕显示区（AA）设置；有机绝缘层（101）在封装坝（106）远离显示区（AA）的一侧具有凹槽结构（C）；位于有机绝缘层（101）背离衬底基板（100）一侧的触控结构，包括延伸至非显示区（BB）的多条触控线（102）；无机绝缘层（105）在封装坝（106）远离显示区（AA）的一侧具有镂空结构（H），镂空结构（H）覆盖凹槽结构（C）且与多条触控线（102）的正投影互不交叠。

Description

显示基板、显示面板及显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种显示基板、显示面板及显示装置。
背景技术
有机电致发光(OLED)显示装置是基于有机电致发光二极管的显示屏。其具备自发光、对比度高、厚度薄、视角广、响应速度快、可用于挠曲性面板、使用温度范围广、构造及制程较简单等优异特性，受到了越来越多的关注，应用前景广阔。一般可采用OLED显示模组内嵌触控结构的方式来整合触控功能，以实现OLED显示装置的显示功能和触控功能一体化。
发明内容
一方面，本公开实施例提供了一种显示基板，包括：
衬底基板，所述衬底基板包括显示区、以及位于所述显示区一侧的非显示区；
封装坝，位于所述非显示区并围绕所述显示区设置；
有机绝缘层，位于所述衬底基板之上；所述有机绝缘层具有凹槽结构，所述凹槽结构位于所述封装坝远离所述显示区的一侧；
触控结构，位于所述有机绝缘层背离所述衬底基板的一侧；所述触控结构包括延伸至所述非显示区的多条触控线；
无机绝缘层，位于所述衬底基板之上；所述无机绝缘层在所述封装坝远离所述显示区的一侧具有镂空结构，所述镂空结构覆盖所述凹槽结构且与所述多条触控线的正投影互不交叠。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述触控结构还包括：位于所述显示区的多个触控电极和多个桥接部；其中，
每条所述触控线包括：与所述多个触控电极同层设置的第一分部，以及与所述多个桥接部同层设置并与所述第一分部电连接的第二分部；
所述多个触控电极与所述多条触控线电连接，每个所述桥接部与两个所述触控电极对应电连接；
所述无机绝缘层位于所述多个触控电极所在层与所述多个桥接部所在层之间。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述多个桥接部位于所述多个触控电极所在层与所述有机绝缘层之间。
在一些实施例中，在本公开实施例提供的上述显示基板中，还包括：位于所述非显示区内的至少一条浮空线；其中，所述多条触控线可以划分为至少一组触控线，所述至少一条浮空线位于所述至少一组触控线的两侧边缘的至少一侧中。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述多条触控线可以划分为两组触控线，所述至少一条浮空线为多条，所述多条浮空线分别位于每组触控线的两侧边缘中。
在一些实施例中，在本公开实施例提供的上述显示基板中，每组所述触控线沿第一方向排列且沿第二方向延伸，第一方向和第二方向相交，所述多条浮空线分别位于每组触控线的在第一方向上的两侧边缘中。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述多条浮空线设置于所述多个触控电极所在层、所述多个桥接部所在层中的至少一层。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述多条浮空线包括：与所述多个触控电极同层设置的多条第一浮空线，以及与所述多个桥接部同层设置的多条第二浮空线；其中，
在垂直于所述衬底基板的方向上，部分所述第一浮空线与所述多条第二浮空线之间对应设置，其余部分所述第一浮空线与所述多条第二浮空线互不交叠。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述部分所 述第一浮空线所在区域位于所述其余部分所述第一浮空线所在区域与所述触控线所在区域之间。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述其余部分所述第一浮空线的数量大于所述部分所述第一浮空线的数量。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述多条第二浮空线在所述衬底基板上的正投影与所述部分所述第一浮空线的正投影完全重合。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述部分所述第一浮空线在所述衬底基板上的正投影位于所述无机绝缘层的正投影内；
所述其余部分所述第一浮空线中的至少一条中的部分结构在所述衬底基板上的正投影与所述镂空结构相互交叠、且与所述凹槽结构互不交叠，另一部分结构与镂空结构互不交叠。
在一些实施例中，在本公开实施例提供的上述显示基板中，在所述第一方向上，相邻两条所述浮空线的第一间距、相邻两条所述触控线的第二间距、以及相邻所述浮空线与所述触控线的第三间距相同。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述第一间距、所述第二间距与所述第三间距为4μm-25μm。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述多条浮空线自所述多条触控线靠近所述显示区一侧的边缘，延伸至与所述多条触控线远离所述显示区一侧的端部平齐。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述多条浮空线在每组所述触控线两侧的数量相同。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述多条触控线包括多条触控驱动线和多条触控感应线；
所述多个触控电极包括：在第一方向排列的多个触控驱动电极，以及在第二方向上排列的多个触控感应电极；
每条所述触控驱动线与一行所述触控驱动电极电连接，每条所述触控感 应线与一列所述触控感应电极电连接。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述有机绝缘层包括：平坦层，以及位于所述平坦层背离所述衬底基板一侧的像素界定层。
在一些实施例中，在本公开实施例提供的上述显示基板中，所述平坦层为单层结构或双层结构。
另一方面，本公开实施例提供了一种显示面板，包括本公开实施例提供的上述显示基板。
另一方面，本公开实施例提供了一种显示装置，包括本公开实施例提供的上述显示面板。
附图说明
图1为相关技术中显示面板的结构示意图；
图2为沿图1中I-II线的剖面结构示意图；
图3为图1中P区域的放大结构示意图；
图4为沿图3中III-IV线的剖面结构示意图；
图5为本公开实施例提供的显示面板的结构示意图；
图6为图5中Q区域的一种放大结构示意图；
图7为图6中Z区域的一种放大结构示意图；
图8为沿图7中V-VI线的剖面结构示意图；
图9为图6中Z区域的又一种放大结构示意图；
图10为沿图9中VII-VIII线的一种剖面结构示意图；
图11为沿图9中VII-VIII线的又一种剖面结构示意图；
图12为图5中Q区域的又一种放大结构示意图；
图13为沿图5中IX-XI线的一种剖面结构示意图；
图14为沿图5中IX-XI线的又一种剖面结构示意图；
图15为沿图12中XII-XIII线的一种剖面结构示意图；
图16为沿图12中E-F线的一种剖面结构示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。需要注意的是，附图中各图形的尺寸和形状不反映真实比例，目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其它实施例，都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“内”、“外”、“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
目前市场上较为主流的小尺寸OLED产品，均为内部搭载着触控结构(TSP)工艺的大角度弯折产品。如图1至图3所示，在内部搭载着触控结构的相关OLED产品中，触控结构在显示区与OLED显示模组的封装层接触，在显示区周围的边框区与OLED显示模组中整面设置的有机绝缘层101接触，触控结构包括多条触控线102、多个触控电极103和多个桥接部104，以及在多个触控电极103所在层与多个桥接部104所在层之间整面设置的无机绝缘层105。在大角度弯折工艺中为了释放弯折应力，需要在边框区的有机绝缘层101中设置凹槽结构C。为保证产品在大角度弯折下无裂纹(Crack)不良， 需增加触控结构所含无机绝缘层105的膜层应力，但较大的膜层应力降低了无机绝缘层105与凹槽结构C处有机绝缘层101的粘附力(如图4所示)，导致弯折(Bending)区出现无机绝缘层106发生褶皱或脱离(Peeling)，进而导致触控线102发生断线不良、及工艺过程中异物颗粒(particle)超标，诱发严重的触控无感不良。
针对相关技术中存在的上述问题，本公开实施例提供了一种显示基板，如图5和图6所示，包括：
衬底基板100，衬底基板100包括显示区AA、以及位于显示区AA一侧非显示区BB；
封装坝106，位于非显示区BB并围绕显示区AA设置；
有机绝缘层101，位于衬底基板100之上；有机绝缘层101具有凹槽结构C，该凹槽结构C位于封装坝106远离显示区AA的一侧；
触控结构，位于有机绝缘层101背离衬底基板100的一侧；触控结构包括延伸至非显示区BB的多条触控线102；
无机绝缘层105，位于衬底基板100之上；无机绝缘层105在封装坝106远离显示区AA的一侧具有镂空结构H，该镂空结构H覆盖凹槽结构C且与多条触控线102的正投影互不交叠。
本公开实施例提供的上述显示基板中，通过在无机绝缘层105中设置覆盖有机绝缘层101所含凹槽结构C的镂空结构H，使得凹槽结构C所在区域不存在无机绝缘层105的图案，从而避免了应力较大的无机绝缘层105在凹槽结构C处发生褶皱或脱离；并且，镂空结构H未覆盖触控线102，使得位于触控线102处的无机绝缘层105可以保持触控线102较好的粘附力。因此本公开有效提高了产品良率，保证了触控效果。
在一些实施例中，所述镂空结构H的长度和/或宽度均分别大于所述凹槽结构C的长度和/或宽度。具体地，在凹槽结构C为多个时，在一些实施例中，可以在无机绝缘层105中设置分别覆盖各凹槽结构C的多个镂空结构H，此时，每个镂空结构H的长度和/或宽度大于对应凹槽结构C的长度和/或宽度； 在另一些实施例中，还可以设置一个镂空结构H同时覆盖多个凹槽结构C，此时，每个镂空结构H的长度和/或宽度需大于多个凹槽结构C的长度之和和/或宽度之和。
在一些实施例中，所述镂空结构H与封装坝106远离显示区AA一侧的边界距离大于凹槽结构C的宽度，和/或，小于凹槽结构C的长度。
在一些实施例中，凹槽结构C的长度和宽度的比值在约20:1-约200:1之间。在另一些实施例中，凹槽结构C的长度和宽度的比值可以为约22:1，约169:1，约185:1。可以理解的是，本文中的约是指允许工艺和测量范围内的误差，并不严格限定界限，且可以在上下10％的浮动内变化。
在一些实施例中，凹槽结构C的宽度和深度的比值在约5:1-约20:1之间。在另一些实施例中，凹槽结构C的宽度和深度的比值可以为13.5:1。在一些实施例中，凹槽结构C的宽度约为55μm，深度约为4μm，长度约为1235μm、9300μm、或10200μm。镂空结构H与封装坝106远离显示区AA一侧的边界距离(即封装坝106距离无机绝缘层105边界的最短距离)约为165μm、深度约为0.53μm。封装坝106距离无机绝缘层105边界的最远距离约为515μm。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图5至图11所示，触控结构还可以包括：位于显示区AA的多个触控电极103和多个桥接部104；其中，
每条触控线102包括：与多个触控电极103同层设置的第一分部1021，以及与多个桥接部104同层设置并与第一分部1021电连接的第二分部1022；
多个触控电极103与多条触控线102电连接，每个桥接部104与两个触控电极103对应电连接；
无机绝缘层105位于多个触控电极103所在层与多个桥接部104所在层之间。
通过将触控线102设置为包括第一分部1021和第二分部1022的双层走线，可以使得在其中一层走线局部断裂后，仍可通过另一层走线对触控电极103加载信号，从而有效解决了单层走线断裂容易导致触控失效的问题。在具 体实施时，第一分部1021与第二分部1022之间通过贯穿无机绝缘层105的过孔电连接。
需要说明的是，在本公开中，触控结构不仅可以为上述互容结构，还可以为自容结构。并且在触控结构为自容结构时，该触控结构可以包括与多条触控线102异层设置的多个自电容电极，无机绝缘层105位于多条触控线102所在层与多个自电容电极所在层之间，且每条触控线102通过贯穿无机绝缘层105的过孔与一个自电容电极电连接。下文以触控结构为互容结构为例进行说明。
在一些实施例中，在本公开实施例提供的上述显示基板中，多个桥接部104可以位于多个触控电极103所在层与有机绝缘层101之间，即多个桥接部104所在层、无机绝缘层105和多个触控电极103所在层依次层叠设置在有机绝缘层101背离衬底基板100的一侧。当然，在具体实施时，多个桥接部104还可以位于多个触控电极103所在层背离有机绝缘层101的一侧，此时多个触控电极103所在层、无机绝缘层105和多个桥接部104所在层依次层叠设置在有机绝缘层101背离衬底基板100的一侧。以下均以多个桥接部104位于多个触控电极103所在层与有机绝缘层101之间为例进行说明。
在一些实施例中，如图12所示，所述凹槽结构C为6个，从显示基板的一侧向另一侧沿着第一方向X分布，依次为第一凹槽结构C1、第二凹槽结构C2、第三凹槽结构C3、第四凹槽结构C4、第五凹槽结构C5和第六凹槽结构C6。在一些实施例中，全部凹槽结构C的位置大致在一条直线上。以两组触控线102为例进行说明，第一凹槽结构C1和第六凹槽结构C6位于两组触控线102这一整体的两侧，第二凹槽结构C2、第三凹槽结构C3、第四凹槽结构C4、第五凹槽结构C5位于两组触控线102的中间。在一些实施例中，凹槽结构C的宽度和/或深度大致上均相同。在一些实施例中，最外侧的凹槽结构C(例如第一凹槽结构C1和第六凹槽结构C6)长度最小。在两组触控线102之间，靠近两组触控线102的凹槽结构C(例如第二凹槽结构C2和第五凹槽结构C5)的长度大于远离两组触控线102的凹槽结构C(例如第三凹槽结构 C3和第四凹槽结构C4)的长度。且各凹槽结构C的宽度相对于一条虚拟的中线MN是对称的。
需要说明的是，在实际工艺中，由于工艺条件的限制或其他因素，上述“大致上均相同”可能会完全相同，也可能会有一些偏差，因此上述特征之间“大致上均相同”的关系只要满足误差允许即可，均属于本公开的保护范围。另外，如图12所示，在非显示区BB内还具有弯折区PB，进一步的，凹槽结构C位于封装坝106和弯折区PB之间。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图6至图11所示，还可以包括：位于非显示区BB内的至少一条浮空线107；其中，多条触控线102可以划分为至少一组触控线102，上述至少一条浮空线107位于至少一组触控线102的两侧边缘的至少一侧中。在一些实施例中多条触控线102可以仅构成一组，在另一些实施例中多条触控线102可以划分为两组，具体可根据实际产品的边框尺寸及触控线102的数量进行合理设置，在此不做具体限定。另外，由于位于每组触控线102边缘的无机绝缘层105易发生褶皱甚至脱离有机绝缘层101，因此通过在每组触控线102的边缘处设置浮空线107，可以有效抑制无机绝缘层105的脱离现象延伸至触控线102所在区而导致触控不良。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图7至图11所示，多条触控线102可以划分为两组触控线102，上述至少一条浮空线107为多条，多条浮空线107可以分别位于每组触控线102的两侧边缘中。通过在每组触控线102的两侧边缘处设置浮空线107，可以更有效地抑制无机绝缘层105的脱离现象延伸至触控线102所在区而导致触控不良。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图6所示，每组触控线102沿第一方向X排列且沿第二方向Y延伸，第一方向X和第二方向Y相交，多条浮空线107分别位于每组触控线102的在第一方向X上的两侧边缘中。由于在每组触控线102两侧边缘的无机绝缘层105易发生褶皱甚至脱离平坦层101，因此通过在每组触控线102的两侧边缘处均设置浮空线 107，可以有效抑制无机绝缘层105的脱离现象延伸至触控线102所在区而导致触控不良。
需要说明的是，在本公开中为避免浮空线107干扰触控线103上的信号，可以设置浮空线107不接入任何信号。
在一些实施例中，在本公开实施例提供的上述显示基板中，为了有效抑制无机绝缘层105的脱离现象延伸至触控线102所在区，可以设置多条浮空线107在每组触控线102两侧的数量相同，如图7和图9所示。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图7至图11所示，多条浮空线107可以为单层，或双层结构，其膜层结构可以与多个触控电极103所在层、多个桥接部104所在层中的至少一层同层且同材料。
无机绝缘层105位于多个触控电极103所在层和多个桥接部104所在层之间，因此在多个触控电极103所在层或多个桥接部104所在层中设置浮空线107均可以有效抑制无机绝缘层106的脱离发生，而在多个触控电极103所在层和多个桥接部104所在层中均设置浮空线107，可以实现对无机绝缘层105的双层加固效果，从而更好地阻挡无机绝缘层105发生脱离。
在一些实施例中，在本公开实施例提供的上述显示基板中，为了有效阻止无机绝缘层105发生脱离，如图7和图8所示，在多条浮空线107均与多个桥接部104同层设置时，多条浮空线107在衬底基板100上的正投影位于无机绝缘层105的正投影内；如图9和图10所示，在多条浮空线107均与多个触控电极103同层设置时，部分浮空线107在衬底基板100上的正投影位于无机绝缘层106的正投影内，其余部分浮空线107在衬底基板100上的正投影与镂空结构H的正投影相互交叠、且与凹槽结构C的正投影互不交叠；如图9和图11所示，在多条浮空线107包括：与多个触控电极103同层设置的多条第一浮空线1071，以及位于与多个桥接部104同层设置的多条第二浮空线1072时，在垂直于衬底基板100的方向上，部分第一浮空线1071与全部第二浮空线1072对应设置，其余部分第一浮空线1071与全部第二浮空线1072互不交叠。
在一些实施例中，在本公开实施例提供的上述显示基板中，为了增强对无机绝缘层105的加固效果，可以设置上述部分第一浮空线1071所在区域，位于上述其余部分第一浮空线1071所在区域与触控线102所在区域之间，换言之，在靠近触控线102的区域设置了双层浮空线(分别为部分第一浮空线1071和全部第二浮空线1072)，在远离触控线102的区域仅设置了单层浮空线(即其余部分第一浮空线1072)。进一步地，单层浮空线所含其余部分第一浮空线1072的数量可以大于双层浮空线所含部分第一浮空线1071的数量。
在一些实施例中，在本公开实施例提供的上述显示基板中，部分第一浮空线1071在衬底基板100上的正投影位于无机绝缘层105的正投影内；其余部分第一浮空线1071中的至少一条中的部分结构在衬底基板100上的正投影与镂空结构H相互交叠、且与凹槽结构C互不交叠，另一部分结构与镂空结构H互不交叠。这样使得部分第一浮空线1071与全部第二浮空线1072之间具有无机绝缘层105，避免了对应设置的第一浮空线1071与第二浮空线1072直接搭接在一起，从而解决了双层金属搭接粘性差而导致的脱落问题。
在一些实施例中，在本公开实施例提供的上述显示基板中，为了保证对无机绝缘层105的双层加固效果，可以设置部分第一浮空线1071在衬底基板100上的正投影与全部第二浮空线1072的正投影大致上完全重合。具体而言，“大致上完全重合”指第一浮空线1071恰好遮挡对应的第二浮空线1072，或者第一浮空线1071遮挡所对应第二浮空线1072的绝大部分(例如遮挡90％-99％)。在一些实施例中，部分第一浮空线1071在衬底基板100上的正投影与全部第二浮空线1072的正投影完全重合。
在一些实施例中，其余部分第一浮空线1072中的至少一条具有部分结构与所述无机绝缘层105具有交叠面积，相互连接的另一部分结构与无机绝缘层105没有交叠面积，即位于镂空结构H中。上述所述的其余部分第一浮空线1072中的至少一条，具备从有无机绝缘层105载体到没有无机绝缘层105载体的平滑段差过度，可以进一步增加浮空线107与镂空结构H下膜层和无机绝缘层105的粘结性。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图7和图9所示，在第一方向X上，相邻两条浮空线107的第一间距d 1、相邻两条触控线102的第二间距d 2、以及相邻浮空线107与触控线102的第三间距d 3相同。在一些实施例中，第一间距d 1、第二间距d 2和第三间距d 3可以为4μm-25μm，例如4μm、5μm、6μm、7μm、8μm、9μm、10μm、11μm、12μm、13μm、14μm、15μm、16m、17μm、18μm、19μm、20μm、21μm、22μm、23μm、24μm、25μm等。
通过设置浮空线107之间的第一间距d 1、以及浮空线107与触控线102之间的第三间距d 3等于触控线102之间的第二间距d 2，使得可以采用制作触控线102的相同工艺来制作浮空线107，从而保证了工艺均一性，避免了制作浮空线107带来的工艺波动对触控线102的不良影响。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图6、图7和图9所示，多条浮空线107自多条触控线102靠近显示区AA一侧的边缘，延伸至与多条触控线102远离显示区AA一侧的端部平齐。在一些实施例中，多条浮空线107与多条触控线102均横跨封装坝106，且二者远离显示区AA一侧的端部与无机绝缘层105邻近弯折区PB的下边界线平齐，如图6所示。这样可以使得浮空线107较长，从而提高了浮空线107的抗弯折性能，进而可更好地实现对无机绝缘层106的加固效果。另外，与在镂空结构H所覆盖凹槽结构C之外区域的有机绝缘层101直接接触的其余部分第一浮空线1071延伸至多条触控线102远离显示区AA一侧的边缘时，该其余部分第一浮空线1071在多条触控线102远离显示区AA一侧的边缘处与无机绝缘层105直接接触，从而可增大无机绝缘层105与有机绝缘层101之间的粘附力，进一步提高对无机绝缘层105的加固效果。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图5所示，多条触控线102具体可以包括多条触控驱动线102a和多条触控感应线102b；
多个触控电极103具体可以包括：在第一方向X排列的多个触控驱动电极1031，以及在第二方向Y上排列的多个触控感应电极1032；
每条触控驱动线102a与一行触控驱动电极1031电连接，每条触控感应线102b与一列触控感应电极1032电连接。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图13所示，有机绝缘层101可以包括：平坦层1011，以及位于平坦层1011背离衬底基板100一侧的像素界定层1012。在一些实施例中，平坦层1011可以为图13所示的单层结构，也可以为图14所示的双层结构。并且，在平坦层1011为双层结构时，可以包括第一平坦层1011a和第二平坦层1011b，如图14所示。此时，封装坝106可以包括：设置于平坦层1011的保护部，以及设置于像素界定层1012的阻隔部。在一些实施例中，如图13所示，有机绝缘层101还可以包括：位于像素界定层1012背离平坦层1011一侧的隔垫物层1013。在此情况下，封装坝106可以包括：设置于平坦层1011的保护部，以及设置于像素界定层1012的阻隔部，以及设置于隔垫物层1013的支撑部。
在另一些实施例中，封装坝不局限与上述膜层结构，可以包括与显示区中的膜层同层设置的至少一层结构。所述封装坝可以包括至少一个，例如可以为两个或更多。每个封装坝的膜层组成可以相同或不同，膜层数可以相同或不同，高度可以相同或不同。
在一些实施例中，凹槽结构C可以形成在像素界定层1012和第一平坦层1011a上，暴露出第二平坦层1011b的部分表面，或也可以进一步形成在第二平坦层1011b上。
需要说明的是，在本公开中可以包括至少一个封装坝106，在封装坝106为多个时，相邻封装坝106之间也设置有凹槽结构C，但因在相邻封装坝106之间的凹槽结构C距离弯折区较远，并不会影响无机绝缘层106与有机绝缘层101之间的粘附性。因此，无需对相邻封装坝106之间的凹槽结构C所对应无机绝缘层105进行挖空设计。当然，在一些实施例中，也可以根据实际需要对相邻封装坝106之间的凹槽结构C所对应无机绝缘层105进行挖空设计，在此不做限定。
在一些实施例中，如图8和图12所示，有机绝缘层101中凹槽结构C最 靠近显示区AA一侧的边缘，与无机绝缘层105中镂空结构H最靠近显示区AA一侧的边缘不齐平，即两个边缘形成了台阶状结构。在一些实施例中，如图8和图12所示，有机绝缘层101中凹槽结构C最靠近显示区AA一侧的端面，与无机绝缘层105中镂空结构H最靠近显示区AA一侧的端面不齐平，即两个端面形成了台阶状结构。在一些实施例中，有机绝缘层101在封装坝106远离显示区AA一侧，具有被无机绝缘层105暴露出来的部分表面，也即无机绝缘层105不仅没有覆盖有机绝缘层101中的凹槽结构C，也没有覆盖凹槽结构C靠近显示区AA一侧的部分有机绝缘层101。
在一些实施例中，所述封装坝106距离所述无机绝缘层105边界的最短距离小于所述封装坝106距离有机绝缘层101边界(凹槽结构C中最靠近显示区AA一侧的边界)的最短距离。在一些实施例中，所述封装坝106距离有机绝缘层101边界(凹槽结构C中最靠近显示区AA一侧的边界)的最短距离小于所述封装坝106距离弯折区PB最靠近显示区AA一侧的边界的最短距离。在一些实施例中，所述封装坝106距离所述无机绝缘层105边界的最远距离大于所述封装坝106距离有机绝缘层101边界(凹槽结构C中最靠近显示区AA一侧的边界)的最短距离。在一些实施例中，所述封装坝106距离所述无机绝缘层105边界的最远距离小于所述封装坝106距离弯折区PB最靠近显示区AA一侧的边界的最短距离。
在一些实施例中，在本公开实施例提供的上述显示基板中，如图13和图14所示，还可以包括：位于衬底基板100与有机绝缘层101之间的多个像素驱动电路，每个像素电路可以包括晶体管和电容，其中晶体管包括有源层108、栅极109、源极110和漏极111，电容包括第一电容电极112和第二电容电极113；显示基板还可以包括位于有机绝缘层101与多条触控线102所在层之间的多个发光器件114，每个发光器件114包括阳极1141、发光功能层1142和阴极1143，具体地，多个像素驱动电路与多个发光器件114均位于显示区AA，且多个像素驱动电路与多个发光器件114对应电连接。在一些实施例中，发光功能层1142可以包括空穴注入层、空穴传输层、电子阻挡层、发光材料层、 空穴阻挡层电子传输层和电子注入层；其中发光材料层的材料可以包括小分子有机材料或聚合物分子有机材料，可以为荧光发光材料或磷光发光材料，可以发红光、绿光、蓝光，或可以发白光等。各发光器件114的阳极1141之间通过像素界定层1012相互隔离，可由ITO(氧化铟锡)、氧化铟锌(IZO)、氧化锌(ZnO)等材料制作而成。各发光器件114的阴极1143为整面设置的一体结构，可由锂(Li)、铝(Al)、镁(Mg)、银(Ag)等金属材料制作而成。另外，在本公开中，如图13和图14所示，显示基板还可以包括：缓冲层115、第一栅绝缘层116、第二栅绝缘层117、层间介电层118、封装层119、钝化层120、转接电极121。封装层119可以包括第一无机封装层1191、有机封装层1192和第二无机封装层1193。
需要说明的是，在一些实施例中，所述平坦层1011包括至少一层，例如可以为两层(具体可以为第一平坦层1011a和第二平坦层1011b)，所述凹槽结构C可以设置在最远离所述衬底基板100的平坦层1011上，也可以设置在第一平坦层1011a和第二平坦层1012b上。在另一些实施例中，所述层间介电层118和所述平坦层1011(或第二平坦层1012b)之间还可以包括钝化层120；所述凹槽结构C可以设置在最远离所述衬底基板100的平坦层1011上，也可以设置在第一平坦层1011a和第二平坦层1012b上，也可以设置在第一平坦层1011a、第二平坦层1012b和钝化层120上。另外，本公开中设置镂空结构H的无机绝缘层105包括但不限于多个触控电极103所在层与多个桥接部104所在层之间的无机绝缘层，还可以包括第一无机封装层1191、第二无机封装层1193、第一栅绝缘层116、第二栅绝缘层117、层间介电层118等。
在一些实施例中，最靠近非显示区BB的发光器件114距离所述无机绝缘层105边界的最短距离，小于，最靠近非显示区BB的发光器件114距离有机绝缘101层边界(凹槽结构C中最靠近显示区AA一侧的边界)的最短距离。在一些实施例中，最靠近非显示区BB的发光器件114距离有机绝缘层101边界(凹槽结构C中最靠近显示区AA一侧的边界)的最短距离小于最靠近非显示区BB的发光器件114距离弯折区PB最靠近显示区AA一侧的边界的 最短距离。
在一些实施例中，最靠近非显示区BB的像素驱动电路距离所述无机绝缘层105边界的最短距离小于所述最靠近非显示区BB的像素驱动电路距离有机绝缘层101边界(凹槽结构C中最靠近显示区AA一侧的边界)的最短距离。在一些实施例中，最靠近非显示区BB的像素驱动电路距离有机绝缘层101边界(凹槽结构C中最靠近显示区AA一侧的边界)的最短距离小于最靠近非显示区BB的像素驱动电路距离弯折区PB最靠近显示区AA一侧的边界的最短距离。
在一些实施例中，如图15所示，在凹槽结构C周围，所述有机绝缘层101边界的坡度角λ大于无机绝缘层105边界的坡度角θ。可选地，在凹槽结构C周围，有机绝缘层101边界的坡度角λ大约为30°-50°，无机绝缘层105边界的坡度角θ大约为30°。在一些实施例中，与封装坝106距离最短的无机绝缘层105边界的坡度角大约为70°。在一些实施例中，如图16所示，有机绝缘层101在距离封装坝106最远的无机绝缘层105边界处的坡度角δ大于上述坡度角λ，且无机绝缘层105中距离封装坝106最远的边界的坡度角β可以小于或等于有机绝缘层101在该处的坡度角δ，优选坡度角β等于δ。在一些实施例中，所述有机绝缘层101边界的坡度角δ大约为70°，所述无机绝缘层105边界的坡度角β在大约60°-70°之间。在一些实施例中，如图16所示，在制作无机绝缘层105的过程中，会导致有机绝缘层101出现向远离凹槽结构C一侧凹陷的过刻现象。另外，“大约”指在制作工艺允许误差范围(例如±10％)内的取值均属于本公开的保护范围。
基于同一发明构思，本公开实施例还提供了一种显示面板，包括本公开实施例提供的上述显示基板。
在一些实施例中，该显示面板可以为有机电致发光显示面板(OLED)、量子点发光显示面板(QLED)、或微发光二极管显示面板(Micro LED)。由于该显示面板解决问题的原理与上述显示基板解决问题的原理相似，因此，本公开实施例提供的该显示面板的实施可以参见本公开实施例提供的上述显 示基板的实施，重复之处不再赘述。对于显示面板的其它必不可少的组成部分(例如偏光片)均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。
基于同一发明构思，本公开实施例还提供了一种显示装置，包括本公开实施例提供的上述显示面板。
该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、智能手表、健身腕带、个人数字助理等任何具有显示功能的产品或部件。对于显示装置的其它必不可少的组成部分(例如驱动芯片)均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。另外，由于该显示装置解决问题的原理与上述显示面板解决问题的原理相似，因此，该显示装置的实施可以参见上述显示面板的实施例，重复之处不再赘述。
显然，本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明实施例的精神和范围。这样，倘若本发明实施例的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (21)

  1. 一种显示基板，其中，包括：
    衬底基板，所述衬底基板包括显示区、以及位于所述显示区一侧的非显示区；
    封装坝，位于所述非显示区并围绕所述显示区设置；
    有机绝缘层，位于所述衬底基板之上；所述有机绝缘层具有凹槽结构，所述凹槽结构位于所述封装坝远离所述显示区的一侧；
    触控结构，位于所述有机绝缘层背离所述衬底基板的一侧；所述触控结构包括延伸至所述非显示区的多条触控线；
    无机绝缘层，位于所述衬底基板之上；所述无机绝缘层在所述封装坝远离所述显示区的一侧具有镂空结构，所述镂空结构覆盖所述凹槽结构且与所述多条触控线的正投影互不交叠。
  2. 如权利要求1所述的显示基板，其中，所述触控结构还包括：位于所述显示区的多个触控电极和多个桥接部；其中，
    每条所述触控线包括：与所述多个触控电极同层设置的第一分部，以及与所述多个桥接部同层设置并与所述第一分部电连接的第二分部；
    所述多个触控电极与所述多条触控线电连接，每个所述桥接部与两个所述触控电极对应电连接；
    所述无机绝缘层位于所述多个触控电极所在层与所述多个桥接部所在层之间。
  3. 如权利要求2所述的显示基板，其中，所述多个桥接部位于所述多个触控电极所在层与所述有机绝缘层之间。
  4. 如权利要求3所述的显示基板，其中，还包括：位于所述非显示区内的至少一条浮空线；其中，
    所述多条触控线可以划分为至少一组触控线，所述至少一条浮空线位于所述至少一组触控线的两侧边缘的至少一侧中。
  5. 如权利要求4所述的显示基板，其中，所述多条触控线可以划分为两组触控线，所述至少一条浮空线为多条，所述多条浮空线分别位于每组触控线的两侧边缘中。
  6. 如权利要求5所述的显示基板，其中，每组所述触控线沿第一方向排列且沿第二方向延伸，第一方向和第二方向相交，所述多条浮空线分别位于每组触控线的在第一方向上的两侧边缘中。
  7. 如权利要求5或6所述的显示基板，其中，所述多条浮空线设置于所述多个触控电极所在层、所述多个桥接部所在层中的至少一层。
  8. 如权利要求7所述的显示基板，其中，所述多条浮空线包括：与所述多个触控电极同层设置的多条第一浮空线，以及与所述多个桥接部同层设置的多条第二浮空线；其中，
    在垂直于所述衬底基板的方向上，部分所述第一浮空线与所述多条第二浮空线对应设置，其余部分所述第一浮空线与所述多条第二浮空线互不交叠。
  9. 如权利要求8所述的显示基板，其中，所述部分所述第一浮空线所在区域位于所述其余部分所述第一浮空线所在区域与所述触控线所在区域之间。
  10. 如权利要求9所述的显示基板，其中，所述其余部分所述第一浮空线的数量大于所述部分所述第一浮空线的数量。
  11. 如权利要求8所述的显示基板，其中，所述多条第二浮空线在所述衬底基板上的正投影与所述部分所述第一浮空线的正投影完全重合。
  12. 如权利要求8所述的显示基板，其中，所述部分所述第一浮空线在所述衬底基板上的正投影位于所述无机绝缘层的正投影内；
    所述其余部分所述第一浮空线中的至少一条中的部分结构在所述衬底基板上的正投影与所述镂空结构相互交叠、且与所述凹槽结构互不交叠，另一部分结构与镂空结构互不交叠。
  13. 如权利要求5-12任一项所述的显示基板，其中，在所述第一方向上，相邻两条所述浮空线的第一间距、相邻两条所述触控线的第二间距、以及相 邻所述浮空线与所述触控线的第三间距相同。
  14. 如权利要求13所述的显示基板，其中，所述第一间距、所述第二间距与所述第三间距为4μm-25μm。
  15. 如权利要求5-14任一项所述的显示基板，其中，所述多条浮空线自所述多条触控线靠近所述显示区一侧的边缘，延伸至与所述多条触控线远离所述显示区一侧的端部平齐。
  16. 如权利要求5-15任一项所述的显示基板，其中，所述多条浮空线在每组所述触控线两侧的数量相同。
  17. 如权利要求2-16任一项所述的显示基板，其中，所述多条触控线包括多条触控驱动线和多条触控感应线；
    所述多个触控电极包括：在第一方向排列的多个触控驱动电极，以及在第二方向上排列的多个触控感应电极；
    每条所述触控驱动线与一行所述触控驱动电极电连接，每条所述触控感应线与一列所述触控感应电极电连接。
  18. 如权利要求1-17任一项所述的显示基板，其中，所述有机绝缘层包括：平坦层，以及位于所述平坦层背离所述衬底基板一侧的像素界定层。
  19. 如权利要求18所述的显示基板，其中，所述平坦层为单层结构或双层结构。
  20. 一种显示面板，其中，包括如权利要求1-19任一项所述的显示基板。
  21. 一种显示装置，其中，包括如权利要求20所述的显示面板。
PCT/CN2020/131927 2020-11-26 2020-11-26 显示基板、显示面板及显示装置 WO2022109950A1 (zh)

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