WO2017017820A1 - Method for manufacturing liquid crystal display device - Google Patents
Method for manufacturing liquid crystal display device Download PDFInfo
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- WO2017017820A1 WO2017017820A1 PCT/JP2015/071548 JP2015071548W WO2017017820A1 WO 2017017820 A1 WO2017017820 A1 WO 2017017820A1 JP 2015071548 W JP2015071548 W JP 2015071548W WO 2017017820 A1 WO2017017820 A1 WO 2017017820A1
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- liquid crystal
- substrate
- alignment film
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- display device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
Definitions
- the present invention relates to a method of manufacturing a liquid crystal display device provided in a television receiver, a personal computer, or the like.
- the liquid crystal display device is thin and has low power consumption.
- a liquid crystal display device including a TFT substrate (active matrix substrate) including a switching element such as a thin film transistor (TFT) for each pixel has a high contrast ratio, excellent response characteristics, and high performance. It is suitably used for receivers, personal computers and the like.
- a television receiver (hereinafter referred to as a TV receiver) including a liquid crystal display device includes, for example, a display module having a display panel that displays images on the front side, a backlight unit that irradiates light on the rear side of the display panel, and a display module.
- the front cabinet which covers the peripheral part and the side part of the front of and the rear cabinet which covers the back of the display module.
- FIG. 13 is a schematic cross-sectional view showing a conventional display panel.
- the display panel 600 includes a TFT substrate 1 and a CF substrate (color filter substrate, counter substrate) 3 facing each other, a liquid crystal layer 4 provided as a display medium layer between the TFT substrate 1 and the CF substrate 3, and the TFT substrate 1. And a sealing material 5 provided in a frame shape for adhering the CF substrate 3 to each other and enclosing the liquid crystal layer 4 between the TFT substrate 1 and the CF substrate 3. The distance between the TFT substrate 1 and the CF substrate 3 is held constant by a spacer 41 arranged in the liquid crystal layer 4.
- the TFT substrate 1 is formed by forming a pixel electrode 18 on an insulating substrate 10 such as a glass substrate, and covering the pixel electrode 18 with an alignment film 19 such as polyimide.
- an alignment film 19 such as polyimide.
- a plurality of color filters 31 are formed on an insulating substrate 30 such as a glass substrate, a topcoat film 32 is formed so as to cover the color filter 31, and the common electrode 33 and the topcoat film 32 are formed on the topcoat film 32.
- the alignment film 34 is laminated in order.
- the display panel 600 is formed by forming an alignment film 19 made of polyimide on the TFT substrate 1 and baking it, and performing an alignment treatment for imparting anisotropy to the alignment film 19. And obtained by pasting together.
- the CF substrate 3 is formed by baking an alignment film 34 made of polyimide, and after performing an alignment process on the alignment film 34, a seal material 5 is applied in a frame shape, and a liquid crystal material is applied inside the seal material 5. Can be obtained.
- FIG. 13 shows a state where bubbles 40 are generated in the liquid crystal layer 4.
- an organic insulating film made of, for example, a photosensitive acrylic resin is formed (not shown), and the organic insulating film absorbs moisture during the above-described steps. During the bonding, water vapor may be released into the liquid crystal layer 4 to generate bubbles (portions where the liquid crystal is not aligned). When bubbles are generated in the liquid crystal layer 4, uneven gaps, bright spots, and black spots occur, resulting in a display defect.
- Patent Document 1 the pattern of the alignment film 19 of the TFT substrate 1 and the pattern of the alignment film 34 of the CF substrate 3 are formed so as to be in contact with the surface of the sealing material 5 on the liquid crystal layer 4 side.
- Patent Document 1 it is necessary to change the design of the display panel 600 and add equipment. Then, when the alignment film 19 or the alignment film 34 and the sealing material 5 overlap, the adhesive strength of the sealing material 5 may be reduced. Therefore, accuracy is required to form the pattern.
- An object of the present invention is to provide a method of manufacturing a liquid crystal display device that can suppress the occurrence of display defects and can manufacture a liquid crystal display device having good display quality.
- At least one substrate has an organic film containing an organic material
- an alignment film is formed on each of the pair of substrates
- the formed alignment films are baked, and the baked alignments
- each substrate is vacuum degassed, and then the two substrates are bonded together with a liquid crystal material interposed between the two substrates. After that, the environmental humidity of the transport line transported for bonding to the other substrate deaerated in vacuum is controlled to 45.5% or less.
- the organic film of the substrate absorbs moisture in the transfer line, and moisture is released into the liquid crystal material in the bonding process, thereby causing bubbles.
- a liquid crystal display device having a good display quality can be manufactured with a high yield by suppressing the occurrence of defects in the display due to the portion where the liquid crystal is not aligned.
- design changes such as changing the pattern of an alignment film like patent document 1, and it is possible to control environmental humidity using the existing air conditioner, it is new. There is no need to install any equipment. Like patent document 1, there is no possibility that the adhesive strength of a sealing material may fall.
- the transport line and a second transport line for transporting the one substrate or the other substrate to perform other processing are provided in the same space.
- the space including the transfer line is partitioned from the same space, and the environmental humidity of the space is controlled to 45.5% or less.
- the organic film of the substrate absorbs moisture, and in the bonding step, it is suppressed that moisture is released into the liquid crystal material to generate bubbles, and a certain humidity is required.
- the humidity is controlled to be 45% or more, so that the substrate is charged and electrostatic breakdown is prevented from occurring in elements such as TFTs, and the occurrence of display defects is further suppressed. Is done.
- moisture absorption of the organic film of the substrate can be suppressed better.
- At least one substrate has an organic film containing an organic material
- an alignment film is formed on each of the pair of substrates, the formed alignment films are baked, and the baked alignments
- both substrates are bonded together with a sealing material, a liquid crystal material is injected from an injection hole provided in the sealing material, and the injection hole is sealed.
- the alignment film After the alignment film is baked, an alignment treatment is performed, and a transfer line for transferring the substrate to be bonded to the other substrate, the substrates are bonded, the liquid crystal material is injected from the injection hole, and the injection hole In order to seal, the environmental humidity with the transfer line for transferring both the substrates is controlled to 45.5% or less.
- the organic film of the substrate absorbs moisture in the transfer line, the bonding step, the liquid crystal material injection step, and the injection hole In the sealing step, moisture is released into the liquid crystal material to generate bubbles, that is, a portion where the liquid crystal is not aligned, thereby preventing a display defect.
- the method for manufacturing a liquid crystal display device according to the present invention is characterized in that the environmental humidity of the device arranged corresponding to the transport line is also controlled to 45.5% or less.
- the organic film of the substrate is better suppressed from absorbing moisture.
- the method for manufacturing a liquid crystal display device according to the present invention is characterized in that the environmental humidity is 45% or less.
- the organic film of the substrate is better suppressed from absorbing moisture.
- the method for manufacturing a liquid crystal display device according to the present invention is characterized in that the environmental humidity is 35% or more.
- the lower limit of the environmental humidity is 35%, the natural discharge rate is increased, and the substrate is charged and electrostatic breakdown of elements such as TFTs is suppressed. Therefore, in the present invention, it is possible to achieve both suppression of the generation of bubbles in the liquid crystal layer and suppression of the generation of defects due to electrostatic breakdown of the element.
- the environmental humidity of the transport line that is transported to be bonded to the other substrate is controlled to 45.5% or less.
- the organic film absorbs moisture, and in the bonding process, moisture is released into the liquid crystal material, bubbles are generated, display defects are suppressed, and a liquid crystal display device having good display quality is manufactured with high yield. Can do. And it is not necessary to change the design, and it is possible to control the environmental humidity using an existing air conditioner, so that it is not necessary to newly install equipment.
- FIG. 4 is a schematic cross-sectional view showing the display panel according to Embodiment 1.
- FIG. 2 is a schematic plan view showing a pixel of a TFT substrate according to Embodiment 1.
- FIG. It is typical sectional drawing which shows the part which the gate wiring and source wiring of a TFT substrate cross.
- FIG. 6 is a schematic cross-sectional view showing a manufacturing area according to Embodiment 2.
- FIG. It is typical sectional drawing which shows the manufacturing area from the vacuum deaeration apparatus which concerns on Embodiment 3 to a bonding apparatus.
- FIG. 10 is a block diagram showing a configuration of a display panel manufacturing apparatus according to Embodiment 4; It is a flowchart which shows the process sequence of manufacture of a display panel. It is typical sectional drawing which shows the conventional display panel.
- FIG. 1 is a schematic perspective view showing a television receiver (hereinafter, referred to as a TV receiver) 100 according to Embodiment 1 including the liquid crystal display device of the present invention
- FIG. 2 is a display panel 6 according to Embodiment 1.
- FIG. 3 is a schematic plan view showing a pixel of the TFT substrate 1 according to Embodiment 1
- FIG. 4 is a schematic view showing a portion where the gate wiring 11 and the source wiring 12 of the TFT substrate 1 cross each other.
- the TV receiver 100 includes a horizontally long display module 7 that includes a display panel 6 that displays video, a tuner 22 that receives broadcast waves from an antenna (not shown), and a decoder 23 that decodes encoded broadcast waves. Prepare. The TV receiver 100 decodes the broadcast wave received by the tuner 22 by the decoder 23 and displays an image on the display module 7 based on the decoded information. A stand 24 that supports the TV receiver 100 is provided below the TV receiver 100.
- the display module 7 when the display module 7 is an edge light type, the display module 7 includes a display panel 3, for example, three optical sheets (hereinafter, not shown), a light guide plate, a reflection sheet, and a chassis.
- the display module 7 is accommodated in a vertical posture in a front cabinet 8 and a rear cabinet 9 that are arranged in a vertical posture in the front-rear direction.
- the front cabinet 8 is a rectangular frame that covers the peripheral edge of the display module 7 and has a rectangular opening in the center.
- the front cabinet 8 is made of, for example, an aluminum material.
- the rear cabinet 9 has a rectangular tray shape with the front side open, and is made of, for example, a plastic material.
- the front cabinet 8 and the rear cabinet 9 may be made of other materials.
- the vertical and horizontal dimensions of the front cabinet 8 and the rear cabinet 9 are substantially the same, and the peripheral portions of each other face each other.
- the vertical and horizontal dimensions of the display panel 3 are slightly larger than the opening of the front cabinet 8, and the peripheral portion of the display panel 6 faces the inner edge portion of the front cabinet 8.
- the display panel 6 adheres the TFT substrate 1 and the CF substrate 3 facing each other, the liquid crystal layer 4 provided as a display medium layer between the TFT substrate 1 and the CF substrate 3, and the TFT substrate 1 and the CF substrate 3 to each other.
- a sealing material 5 provided in a frame shape is provided.
- the distance between the TFT substrate 1 and the CF substrate 3 is held constant by a spacer 41 arranged in the liquid crystal layer 4.
- the TFT substrate 1 is provided between a plurality of gate wirings 11 provided so as to extend in parallel to each other on an insulating substrate 10 such as a glass substrate, and the gate wirings.
- a plurality of capacitor lines 13 extending in parallel with each other, a plurality of source lines 12 provided so as to extend in parallel with each other in a direction crossing each gate line, and each crossing portion of each gate line and each source line, that is,
- the alignment film 19 is omitted.
- an interlayer insulating film 14 is interposed between the gate wiring 11 formed on the insulating substrate 10 and the source wiring 12 at the intersection of the gate wiring 11 and the source wiring 12 of the TFT substrate 1. And the gate insulating film 15 is laminated
- FIG. 4 shows the case where the interlayer insulating film 14 and the gate insulating film 15 are sequentially stacked, the interlayer insulating film 14 may not be formed.
- the interlayer insulating film 14 is made of, for example, an SOG (spin-on glass) material or an organic material such as the above-described acrylic resin. Then, a passivation film 16 is formed so as to cover the source wiring 12, and an interlayer insulating film 17 made of an organic material such as acrylic resin is formed so as to cover the passivation film 16 and flatten it. A pixel electrode 18 is patterned on the interlayer insulating film 17.
- a capacitor electrode 21 is formed on the gate insulating film 15 at a position corresponding to the capacitor wiring 13 (see FIG. 3).
- a pixel electrode 18 is formed on the capacitor electrode 21.
- a plurality of color filters 31 are formed on an insulating substrate 30 such as a glass substrate, and a top coat film 32 is formed so as to cover the color filters 31.
- a common electrode 33 is formed on the topcoat film 32, and an alignment film 34 is formed on the common electrode 33 so as to face the alignment film 19.
- the common electrode 33 may be directly formed on the color filter 31.
- FIG. 5 is a block diagram showing the configuration of the manufacturing apparatus 200 for the display panel 6.
- the one-dot chain line arrows indicate the transfer lines of the TFT substrate 1 (indicated by “TFT” in the figure) and the CF substrate 3 (indicated by “CF” in the figure).
- wiring between the control device 60 and each device is omitted.
- the manufacturing apparatus 200 of the display panel 6 includes an alignment film forming apparatus 51, a baking apparatus 52, an alignment processing apparatus 53, a sealing material applying apparatus 54, a vacuum degassing apparatus 55, a liquid crystal material dropping apparatus 56, a bonding apparatus 56, and a sealing material curing.
- a device 58 and a control device 60 are provided.
- the alignment film forming apparatus 51 applies polyimide, for example, to the TFT substrate 1 and the CF substrate 3 to form alignment films 19 and 34.
- the baking apparatus 52 performs a baking process on each of the TFT substrate 1 and the CF substrate 3 on which the alignment film 19 is formed.
- the alignment processing device 53 irradiates the alignment films 19 and 34 of the TFT substrate 1 and the CF substrate 3 subjected to the baking treatment with linearly polarized ultraviolet rays or performs a rubbing process on the surfaces of the alignment films 19 and 34 to align the alignment films 19 and 34. Anisotropy is generated in the films 19 and 34.
- the rubbing process is performed using a rubbing cloth wound around a rubbing roller.
- the sealing material application device 54 applies the sealing material 5 in a frame shape on the outer peripheral side of the alignment film 34 of the CF substrate 3 on which the alignment process has been performed.
- the vacuum deaerator 55 performs a vacuum deaeration process on each of the TFT substrate 1 and the CF substrate 3.
- the liquid crystal material dropping device 56 has a nozzle for dropping the liquid crystal material, and includes a liquid crystal dropping head (not shown) that is relatively movable in the surface direction of the CF substrate 3. The liquid crystal dropping head drops the liquid crystal material onto a plurality of portions inside the sealing material 5.
- the bonding apparatus 57 includes two stages (not shown) that hold the TFT substrate 1 and the CF substrate 3 in a horizontal state in a vacuum chamber. 1 and the CF substrate 3 are bonded together.
- the sealing material curing device 58 irradiates the sealing material 5 with ultraviolet rays when using an ultraviolet curable sealing material. When the sealing material 5 is not an ultraviolet curing type, the sealing material curing device 58 is configured to cure the sealing material 5.
- the control device 60 includes an alignment film forming device 51, a baking device 52, an alignment processing device 53, a sealing material applying device 54, a vacuum degassing device 55, a liquid crystal material dropping device 56, a bonding device 57, and a sealing material curing device 58.
- a central processing unit (CPU) that centrally controls each device and a storage unit that stores manufacturing information, various programs, and the like related to the manufacturing of the display panel 6 are provided.
- the TFT substrate 1 and the CF substrate 3 are transferred between the devices by a transfer device such as a conveyor or a robot.
- FIG. 6 is a flowchart showing a processing procedure for manufacturing the display panel 6.
- the control device 60 patterns the TFT 20, the pixel electrode 18 and the like on the insulating substrate 10, and then forms the alignment film 19 using, for example, polyimide so as to cover the pixel electrode 18 by the alignment film forming device 51 (S1). ).
- the controller 60 uses the firing device 52 to fire the alignment film 19 at 200 ° C. for 1 hour (S2).
- the control device 60 performs an alignment process on the baked alignment film 19 (S3). As described above, the control device 60 irradiates linearly polarized ultraviolet rays onto the alignment film 19 by the alignment processing device 53 and selectively reacts the polymer chains in the polarization direction to generate anisotropy, thereby aligning the liquid crystal. The surface of the alignment film 19 is rubbed, the polymer chain on the surface of the alignment film 19 is crushed in a certain direction to cause anisotropy on the alignment film 19, and the alignment direction of the liquid crystal molecules is changed. Stipulate.
- control device 60 transports the TFT substrate 1 to the vacuum degassing device 55 and performs vacuum degassing (S4), and then transports it to the bonding device 57 and bonds it to the CF substrate 2 under vacuum (S5). ).
- the CF substrate 2 is manufactured as follows.
- the control device 60 forms the color filter 31, the black matrix, the common electrode 34, and the like on the insulating substrate 30, and then uses the alignment film forming device 51 to form the alignment film 34 on the common electrode 34 using, for example, polyimide. It is formed (S11), and is baked at 200 ° C. for 1 hour by the baking device 52 (S12).
- the control device 60 performs alignment processing on the baked alignment film 34 by the alignment processing device 53 (S13). In the alignment treatment, the alignment film 34 is irradiated with linearly polarized ultraviolet light on the polymer film, or the surface of the alignment film 34 is rubbed to cause anisotropy in the polymer film.
- the control device 60 applies the sealing material 5 having adhesiveness in a frame shape to the inside of the peripheral edge portion of the CF substrate 3 by the sealing material application device 54.
- the sealing material is patterned by a method such as application with a dispenser, and the sealing material is cured by baking to form the frame-shaped sealing material 5 (S14).
- the control device 60 performs vacuum deaeration on the CF substrate 3 on which the sealing material is formed by the vacuum deaeration device 55 (S15), and thereafter, the liquid crystal material is placed inside the sealing material 5 by the liquid crystal material dropping device 56. It is dropped (S16).
- the liquid crystal material is dropped by moving the liquid crystal dropping head of the liquid crystal material dropping device 56 over the entire surface of the TFT substrate 1.
- the control device 60 conveys the CF substrate 3 onto which the liquid crystal material has been dropped to the bonding device 57, and advances the process to S5.
- the control device 60 conveys the bonded TFT substrate 1 and CF substrate 3 to the seal material curing device 58, and irradiates the seal material 5 with, for example, ultraviolet rays to cure (S6).
- FIG. 7 is a schematic cross-sectional view showing the manufacturing area 25 from the vacuum degassing device 55 to the bonding device 57.
- the TFT substrate 1 is conveyed by the conveying device 27 from the back side to the near side of the drawing.
- the control device 60 controls at least the environmental humidity of the transfer line in the manufacturing area 25 to 45.5% or less by the air conditioner 26.
- the environmental humidity of the vacuum degassing device 55 and the bonding device 57 is preferably controlled to 45.5% or less.
- the environmental humidity of the transfer line is more preferably 45% or less.
- the organic material such as the interlayer insulating film 17 included in the TFT substrate 1 absorbs moisture in the transfer line, and the liquid crystal layer 4 at any time after bonding. It is possible to suppress the occurrence of defects in the display due to the release of moisture and the generation of bubbles, that is, the liquid crystal is not aligned. Therefore, in the present embodiment, the occurrence of display defects is suppressed, and a liquid crystal display device having a good display quality can be manufactured with a high yield. And in this Embodiment, it is not necessary to perform design changes, such as changing the pattern of an alignment film like patent document 1, and it is possible to control environmental humidity using the existing air conditioner 26. FIG. So there is no need to install new equipment.
- the environmental humidity of the transfer line from the baking device 52 to the vacuum deaeration device 55 it is preferable to control the environmental humidity of the transfer line from the baking device 52 to the vacuum deaeration device 55 to 45.5% or less. It is preferable to control the environmental humidity of the devices on both ends of each conveyance line to 45.5% or less.
- the environmental humidity is more preferably 45% or less. Thereby, generation
- FIG. 8 is a graph showing the results of examining the relationship between the environmental humidity of the transfer line between the vacuum degassing device 55 and the bonding device 57 and the bubble generation rate when the 60-type liquid crystal display device 100 is manufactured. is there.
- the horizontal axis represents the environmental humidity (%) of the transfer line, and the vertical axis represents the bubble generation rate (%). From FIG. 8, when the environmental humidity of the transfer line is 45.5% or less, the bubble generation rate is about 0.5% or less, and when the environmental humidity is 45%, the bubble generation rate is about 0.4%. It is as follows and it can be seen that the bubbles are well suppressed.
- FIG. FIG. 9 is a schematic cross-sectional view showing the manufacturing area 28 according to the second embodiment.
- the manufacturing area 28 includes a manufacturing area 29 from the vacuum degassing device 55 to the bonding device 57.
- the TFT substrate 1 is transported by the transport device 43 from the back side to the near side of the paper surface by the control device 60, and the environmental humidity is 45.degree. It is controlled to 5% or less.
- the environmental humidity is preferably 45% or less.
- the control device 60 controls the environmental humidity of this transport line to 45% or more by the air conditioner 44. It is preferable to control the environmental humidity of the devices on both ends of the transport line to 45% or more.
- the interlayer insulating film 17 of the TFT substrate 1 absorbs moisture, moisture is released into the liquid crystal layer 4, and bubbles are generated. Occurrence, that is, the occurrence of defects in the display due to the portion where the liquid crystal is not aligned is suppressed.
- the environmental humidity is controlled to be 45% or more. Therefore, the TFT substrate 1 is charged and the TFT 20 may be electrostatically damaged. It is prevented.
- the alignment treatment is performed by rubbing.
- the environmental humidity in the manufacturing area 29 is 45.5% or less.
- the bubble generation rate was about 0.5% or less, and when the environmental humidity was 45%, it was confirmed that the bubble generation rate was about 0.4% or less.
- FIG. 10 is a schematic cross-sectional view showing the manufacturing area 46 from the vacuum degassing device 55 to the bonding device 57.
- the TFT substrate 1 is transported from the back side to the near side of the paper by the transport device 48.
- the control device 60 controls the environmental humidity of the transfer line between the vacuum deaeration device 55 and the bonding device 57 in the manufacturing area 46 to 35% or more and 45.5% or less by the air conditioner 47.
- the environmental humidity of the vacuum degassing device 55 and the bonding device 57 is also preferably controlled to 35% or more and 45.5% or less.
- the upper limit of environmental humidity is preferably 45% or less.
- the interlayer insulating film 17 of the TFT substrate 1 absorbs moisture in the transfer line, and moisture is released into the liquid crystal layer 4 to generate bubbles. It becomes a part which does not orientate and it is suppressed that a malfunction arises in a display. Since the lower limit of the environmental humidity is 35%, the natural discharge rate is increased and the occurrence of electrostatic breakdown of the TFT 20 is suppressed. As described above, in the present embodiment, the suppression of the generation of bubbles in the liquid crystal layer 4 and the suppression of the generation of defects due to electrostatic breakdown of the TFT 20 are compatible.
- the environmental humidity of the transfer line from the baking device 52 to the vacuum deaeration device 55 is preferably controlled to 35% or more and 45.5% or less. It is preferable to control the environmental humidity of the apparatuses on both ends of each conveyance line to 35% or more and 45.5% or less.
- the upper limit is more preferably 45% or less.
- FIG. 11 is a block diagram illustrating a configuration of the manufacturing apparatus 300 for the display panel 6.
- the one-dot chain line arrows indicate the transfer lines of the TFT substrate 1 (indicated by “TFT” in the figure) and the CF substrate 3 (indicated by “CF” in the figure).
- wiring between the control device 60 and each device is omitted.
- the manufacturing apparatus 300 of the display panel 6 includes an alignment film forming device 61, a baking device 62, an alignment processing device 63, a sealing material applying device 64, a bonding device 65, a sealing material curing device 66, a liquid crystal material injecting device 67, and a sealing device. 68 and a control device 60.
- Each substrate may be vacuum degassed before the TFT substrate 1 and the CF substrate 3 are bonded together, and in this case, a vacuum degassing device is further provided.
- the alignment film forming device 61 applies, for example, polyimide or the like to the TFT substrate 1 and the CF substrate 3 to form alignment films 19 and 34.
- the firing device 62 performs a firing process on each of the TFT substrate 1 and the CF substrate 3 on which the alignment film is formed.
- the alignment processing device 63 irradiates the alignment films 19 and 34 of the TFT substrate 1 and the CF substrate 3 subjected to the baking treatment with linearly polarized ultraviolet rays or performs a rubbing process on the surfaces of the alignment films 19 and 34 to align the alignment films 19 and 34. Anisotropy is generated in the films 19 and 34.
- the sealing material application device 64 applies the sealing material 5 in a frame shape on the outer peripheral side of the alignment film 34 of the CF substrate 3 on which the alignment process has been performed.
- the bonding apparatus 65 includes two stages (not shown) that hold the TFT substrate 1 and the CF substrate 3 in a horizontal state in a vacuum chamber. 1 and the CF substrate 3 are bonded together.
- the sealing material curing device 66 irradiates the sealing material 5 with ultraviolet rays when using an ultraviolet curing sealing material. When the sealing material 5 is not an ultraviolet curing type, the sealing material curing device 58 is configured to cure the sealing material 5.
- the sealing material 5 is provided with an injection hole for injecting a liquid crystal material.
- the liquid crystal material injecting device 67 includes a vacuum chamber, the bonded TFT substrate 1 and CF substrate 3 and the liquid crystal material are put into the vacuum chamber, the inside of the vacuum chamber is evacuated, and the injection hole is immersed in the liquid crystal material. The liquid crystal material is sealed between the two substrates by returning the inside to atmospheric pressure.
- the sealing device 68 seals the injection hole.
- the control device 60 includes an alignment film forming device 61, a baking device 62, an alignment processing device 63, a sealing material applying device 64, a bonding device 65, a sealing material curing device 66, a liquid crystal material injecting device 67, and a sealing device 68.
- a CPU that centrally controls the apparatus and a storage unit that stores manufacturing information relating to the manufacture of the display panel 6, various programs, and the like are provided.
- wiring between the control device 60 and each device is omitted.
- the TFT substrate 1 and the CF substrate 3 are transferred between the devices by a transfer device such as a conveyor or a robot.
- FIG. 12 is a flowchart showing a processing procedure for manufacturing the display panel 6.
- the control device 60 after patterning the TFT 20, the pixel electrode 18 and the like on the insulating substrate 10, forms the alignment film 19 by using the alignment film forming device 61 using polyimide or the like so as to cover the pixel electrode 18 (S1). ).
- the control device 60 uses the firing device 62 to fire the alignment film 19 at 200 ° C. for 1 hour (S2).
- the control device 60 performs an alignment process on the baked alignment film 19 (S3). Whether the control device 60 irradiates the alignment film 19 with the linearly polarized ultraviolet light by the alignment processing device 63 and selectively reacts the polymer chain in the polarization direction to generate anisotropy to give the liquid crystal alignment ability. Alternatively, the surface of the alignment film 19 is rubbed, and the polymer chain on the surface of the alignment film 19 is crushed in a certain direction to cause anisotropy on the alignment film 19, thereby defining the alignment direction of the liquid crystal molecules. Then, the control device 60 conveys the TFT substrate 1 to the bonding device 65 and bonds it to the CF substrate 2 under vacuum (S7).
- the CF substrate 2 is manufactured as follows.
- the control device 60 forms the color filter 31, the black matrix, the common electrode 34, and the like on the insulating substrate 30, and then uses the alignment film forming device 61 to form the alignment film 34 on the common electrode 34 using, for example, polyimide. It is formed (S11), and is baked at 200 ° C. for 1 hour by the baking device 62 (S12).
- the control device 60 performs an alignment process on the baked alignment film 34 (S13). In the alignment treatment, the alignment film 34 is irradiated with linearly polarized ultraviolet light on the polymer film, or the surface of the alignment film 34 is rubbed to cause anisotropy in the polymer film.
- the control device 60 applies the sealing material 5 having adhesiveness in a frame shape to the inside of the peripheral edge portion of the CF substrate 3 by the sealing material application device 64.
- the sealing material is patterned by a method such as application with a dispenser, and the sealing material is cured by baking to form the frame-shaped sealing material 5 (S14).
- the control apparatus 60 conveys the CF board
- the control device 60 conveys the TFT substrate 1 and the CF substrate 3 bonded together by the bonding device 65 to the sealing material curing device 66, and irradiates the sealing material 5 with, for example, ultraviolet rays to cure (S8).
- the control device 60 conveys both substrates to the liquid crystal material injecting device 67, and injects the liquid crystal material from the injection hole of the sealing material 5 between the substrates by the liquid crystal material injecting device 67 (S9).
- the control device 60 seals the injection hole with the sealing device 68 (S10).
- the environmental humidity of each transport line when transporting is controlled to 45.5% or less. It is preferable to control the environmental humidity of the devices on both ends of each conveyance line to 45.5% or less.
- the environmental humidity is preferably 45% or less.
- the interlayer insulating film 17 of the TFT substrate 1 absorbs moisture in the transfer line, moisture is released into the liquid crystal layer 4, and bubbles are generated. It becomes a part where the liquid crystal is not aligned, and the occurrence of defects in display is suppressed.
- the present invention is not limited to the contents of Embodiments 1 to 4 described above, and various modifications can be made within the scope of the claims. In other words, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.
- the liquid crystal display device is not limited to the case where it is provided in a TV receiver.
- the control of the environmental humidity is not limited to the case where the control device 60 performs, but may be performed by an operator. And it is not limited to controlling the environmental humidity of the conveyance line of the TFT substrate 1.
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Abstract
Provided is a method for manufacturing a liquid crystal display device capable of manufacturing a liquid crystal display device having a favorable display quality without the need for altering the design of a display panel or providing additional equipment wherein occurrences of air bubbles that may occur in a liquid crystal layer when an organic film on the substrate absorbs moisture are minimized and thereby occurrences of a display failure are minimized. The method for manufacturing a liquid crystal display device comprises: forming an alignment film for each of a pair of substrates with at least one substrate having an organic film containing an organic material (S1); firing each alignment film formed (S2); aligning each alignment film fired (S3); deairing each substrate with a vacuum (S4); and then bonding both substrates with a liquid crystal material interposed between both substrates (S5). The environmental moisture is controlled to be 45.5% or less in a transfer line used for transferring one deaired substrate to be bonded with the other deaired substrate.
Description
本発明は、テレビジョン受信機、パーソナルコンピュータ等に備えられる液晶表示装置の製造方法に関する。
The present invention relates to a method of manufacturing a liquid crystal display device provided in a television receiver, a personal computer, or the like.
表示装置の中で、液晶表示装置は薄型であり、消費電力が低いという特徴を有する。特に、画素毎に薄膜トランジスタ(TFT)等のスイッチング素子を備えるTFT基板(アクティブマトリクス基板)を備える液晶表示装置は、高いコントラスト比、及び優れた応答特性を有し、高性能であるため、テレビジョン受信機、パーソナルコンピュータ等に好適に用いられている。
Among the display devices, the liquid crystal display device is thin and has low power consumption. In particular, a liquid crystal display device including a TFT substrate (active matrix substrate) including a switching element such as a thin film transistor (TFT) for each pixel has a high contrast ratio, excellent response characteristics, and high performance. It is suitably used for receivers, personal computers and the like.
液晶表示装置を備えるテレビジョン受信機(以下、TV受信機という)は、例えば前側で映像を表示する表示パネル,表示パネルの後側に光を照射するバックライトユニットを有する表示モジュールと、表示モジュールの前面の周縁部及び側部を覆うフロントキャビネットと、表示モジュールの背面を覆うリアキャビネットとを備える。
A television receiver (hereinafter referred to as a TV receiver) including a liquid crystal display device includes, for example, a display module having a display panel that displays images on the front side, a backlight unit that irradiates light on the rear side of the display panel, and a display module. The front cabinet which covers the peripheral part and the side part of the front of and the rear cabinet which covers the back of the display module.
図13は、従来の表示パネルを示す模式的断面図である。
表示パネル600は、互いに対向するTFT基板1、及びCF基板(カラーフィルタ基板、対向基板)3と、TFT基板1及びCF基板3間に表示媒体層として設けられた液晶層4と、TFT基板1及びCF基板3を互いに接着するとともにTFT基板1及びCF基板3間に液晶層4を封入するために枠状に設けられたシール材5とを有する。TFT基板1及びCF基板3の間隔は、液晶層4内に配されたスペーサ41により一定に保持されている。 FIG. 13 is a schematic cross-sectional view showing a conventional display panel.
Thedisplay panel 600 includes a TFT substrate 1 and a CF substrate (color filter substrate, counter substrate) 3 facing each other, a liquid crystal layer 4 provided as a display medium layer between the TFT substrate 1 and the CF substrate 3, and the TFT substrate 1. And a sealing material 5 provided in a frame shape for adhering the CF substrate 3 to each other and enclosing the liquid crystal layer 4 between the TFT substrate 1 and the CF substrate 3. The distance between the TFT substrate 1 and the CF substrate 3 is held constant by a spacer 41 arranged in the liquid crystal layer 4.
表示パネル600は、互いに対向するTFT基板1、及びCF基板(カラーフィルタ基板、対向基板)3と、TFT基板1及びCF基板3間に表示媒体層として設けられた液晶層4と、TFT基板1及びCF基板3を互いに接着するとともにTFT基板1及びCF基板3間に液晶層4を封入するために枠状に設けられたシール材5とを有する。TFT基板1及びCF基板3の間隔は、液晶層4内に配されたスペーサ41により一定に保持されている。 FIG. 13 is a schematic cross-sectional view showing a conventional display panel.
The
TFT基板1は、例えばガラス基板等の絶縁基板10上に画素電極18を形成し、画素電極18をポリイミド等の配向膜19で覆ってなる。CF基板3は、例えばガラス基板等の絶縁基板30上に複数のカラーフィルタ31を形成し、カラーフィルタ31を覆うようにトップコート膜32を形成し、トップコート膜32上に、共通電極33及び配向膜34を順に積層してなる。
The TFT substrate 1 is formed by forming a pixel electrode 18 on an insulating substrate 10 such as a glass substrate, and covering the pixel electrode 18 with an alignment film 19 such as polyimide. In the CF substrate 3, for example, a plurality of color filters 31 are formed on an insulating substrate 30 such as a glass substrate, a topcoat film 32 is formed so as to cover the color filter 31, and the common electrode 33 and the topcoat film 32 are formed on the topcoat film 32. The alignment film 34 is laminated in order.
表示パネル600は、TFT基板1上にポリイミドからなる配向膜19を形成して焼成し、配向膜19に異方性を付与する配向処理を行い、真空脱気した後に、真空下でCF基板3と貼り合わせることにより得られる。
CF基板3は、ポリイミドからなる配向膜34を形成して焼成し、配向膜34に配向処理を行った後、枠状にシール材5を塗布し、液晶材料をシール材5の内側に塗布することにより得られる。 Thedisplay panel 600 is formed by forming an alignment film 19 made of polyimide on the TFT substrate 1 and baking it, and performing an alignment treatment for imparting anisotropy to the alignment film 19. And obtained by pasting together.
TheCF substrate 3 is formed by baking an alignment film 34 made of polyimide, and after performing an alignment process on the alignment film 34, a seal material 5 is applied in a frame shape, and a liquid crystal material is applied inside the seal material 5. Can be obtained.
CF基板3は、ポリイミドからなる配向膜34を形成して焼成し、配向膜34に配向処理を行った後、枠状にシール材5を塗布し、液晶材料をシール材5の内側に塗布することにより得られる。 The
The
上述のTFT基板1の配向膜19の形成工程からCF基板3との貼合せ工程までの間に、TFT基板1を搬送する場合に滞留等が生じたとき、液晶層4内に気泡が生じることがある。
図13においては、液晶層4内に気泡40が生じた状態を示している。 When theTFT substrate 1 is transported between the formation process of the alignment film 19 of the TFT substrate 1 and the bonding process with the CF substrate 3, bubbles are generated in the liquid crystal layer 4 when the retention or the like occurs. There is.
FIG. 13 shows a state wherebubbles 40 are generated in the liquid crystal layer 4.
図13においては、液晶層4内に気泡40が生じた状態を示している。 When the
FIG. 13 shows a state where
TFT基板1の画素電極18の絶縁基板10側には、例えば感光性のアクリル樹脂等からなる有機絶縁膜が形成されており(不図示)、上述の工程の間に該有機絶縁膜が吸湿し、貼り合わせの際に液晶層4内へ水蒸気が放出されて気泡(液晶配向しない部分)が生じることがある。
液晶層4に気泡が生じた場合、ギャップむら並びに輝点及び黒点となり、表示に不具合が生じる。 On theinsulating substrate 10 side of the pixel electrode 18 of the TFT substrate 1, an organic insulating film made of, for example, a photosensitive acrylic resin is formed (not shown), and the organic insulating film absorbs moisture during the above-described steps. During the bonding, water vapor may be released into the liquid crystal layer 4 to generate bubbles (portions where the liquid crystal is not aligned).
When bubbles are generated in theliquid crystal layer 4, uneven gaps, bright spots, and black spots occur, resulting in a display defect.
液晶層4に気泡が生じた場合、ギャップむら並びに輝点及び黒点となり、表示に不具合が生じる。 On the
When bubbles are generated in the
特許文献1には、TFT基板1の配向膜19、及びCF基板3の配向膜34のパターンを、シール材5の液晶層4側の面に接するように広く形成することにより、TFT基板1の有機膜から生じるガス及び水分が液晶層4内に侵入するのを防止するようにした液晶表示装置の発明が開示されている。
In Patent Document 1, the pattern of the alignment film 19 of the TFT substrate 1 and the pattern of the alignment film 34 of the CF substrate 3 are formed so as to be in contact with the surface of the sealing material 5 on the liquid crystal layer 4 side. An invention of a liquid crystal display device in which gas and moisture generated from an organic film are prevented from entering the liquid crystal layer 4 is disclosed.
特許文献1の発明においては、表示パネル600の設計変更、及び設備の追加を要する。そして、配向膜19又は配向膜34と、シール材5とが重なり合うことにより、シール材5の接着強度が低下する虞がある。従って、パターンの形成に精度を要する。
In the invention of Patent Document 1, it is necessary to change the design of the display panel 600 and add equipment. Then, when the alignment film 19 or the alignment film 34 and the sealing material 5 overlap, the adhesive strength of the sealing material 5 may be reduced. Therefore, accuracy is required to form the pattern.
本発明は斯かる事情に鑑みてなされたものであり、表示パネルの設計変更、及び設備の追加を必要とせず、基板が有する有機膜が吸湿して液晶層に気泡が生じることが抑制され、表示不良の発生が抑制されており、良好な表示品位を有する液晶表示装置を製造することができる液晶表示装置の製造方法を提供することを目的とする。
The present invention has been made in view of such circumstances, and does not require a design change of the display panel and addition of equipment, suppresses the generation of bubbles in the liquid crystal layer due to moisture absorption by the organic film of the substrate, An object of the present invention is to provide a method of manufacturing a liquid crystal display device that can suppress the occurrence of display defects and can manufacture a liquid crystal display device having good display quality.
本発明に係る液晶表示装置の製造方法は、少なくとも一方の基板が有機材料を含む有機膜を有する、一対の基板夫々に配向膜を形成し、形成した各配向膜を焼成し、焼成した各配向膜に配向処理を施し、各基板を真空脱気した後、両基板間に液晶材を介在させた状態で前記両基板を貼り合わせる液晶表示装置の製造方法において、前記一方の基板を真空脱気した後、真空脱気された他方の基板と貼り合わせるために搬送する搬送ラインの環境湿度を45.5%以下に制御することを特徴とする。
In the method for manufacturing a liquid crystal display device according to the present invention, at least one substrate has an organic film containing an organic material, an alignment film is formed on each of the pair of substrates, the formed alignment films are baked, and the baked alignments In a method of manufacturing a liquid crystal display device in which an alignment treatment is performed on a film, each substrate is vacuum degassed, and then the two substrates are bonded together with a liquid crystal material interposed between the two substrates. After that, the environmental humidity of the transport line transported for bonding to the other substrate deaerated in vacuum is controlled to 45.5% or less.
本発明においては、前記搬送ラインの環境湿度が45.5%以下であるので、該搬送ラインにおいて、前記基板が有する有機膜が吸湿し、貼り合わせ工程で液晶材内に水分が放出されて気泡が生じ、即ち液晶が配向しない部分となって、表示に不具合が生じることが抑制され、良好な表示品位を有する液晶表示装置を高歩留で製造することができる。
そして、本発明においては、特許文献1のように配向膜のパターンを変える等の設計変更を行う必要がなく、既存の空気調節機を用いて環境湿度を制御することが可能であるので、新たに設備を設けたりする必要がない。特許文献1のように、シール材の接着強度が低下する虞もない。 In the present invention, since the environmental humidity of the transfer line is 45.5% or less, the organic film of the substrate absorbs moisture in the transfer line, and moisture is released into the liquid crystal material in the bonding process, thereby causing bubbles. In other words, a liquid crystal display device having a good display quality can be manufactured with a high yield by suppressing the occurrence of defects in the display due to the portion where the liquid crystal is not aligned.
And in this invention, since it is not necessary to perform design changes, such as changing the pattern of an alignment film likepatent document 1, and it is possible to control environmental humidity using the existing air conditioner, it is new. There is no need to install any equipment. Like patent document 1, there is no possibility that the adhesive strength of a sealing material may fall.
そして、本発明においては、特許文献1のように配向膜のパターンを変える等の設計変更を行う必要がなく、既存の空気調節機を用いて環境湿度を制御することが可能であるので、新たに設備を設けたりする必要がない。特許文献1のように、シール材の接着強度が低下する虞もない。 In the present invention, since the environmental humidity of the transfer line is 45.5% or less, the organic film of the substrate absorbs moisture in the transfer line, and moisture is released into the liquid crystal material in the bonding process, thereby causing bubbles. In other words, a liquid crystal display device having a good display quality can be manufactured with a high yield by suppressing the occurrence of defects in the display due to the portion where the liquid crystal is not aligned.
And in this invention, since it is not necessary to perform design changes, such as changing the pattern of an alignment film like
本発明に係る液晶表示装置の製造方法は、前記搬送ラインと、他の処理を行うために前記一方の基板又は前記他方の基板を搬送する第2の搬送ラインとが同一空間内に設けられている場合に、前記搬送ラインを含む空間を前記同一空間から区画し、前記空間の環境湿度を45.5%以下に制御することを特徴とする。
In the method for manufacturing a liquid crystal display device according to the present invention, the transport line and a second transport line for transporting the one substrate or the other substrate to perform other processing are provided in the same space. In this case, the space including the transfer line is partitioned from the same space, and the environmental humidity of the space is controlled to 45.5% or less.
本発明においては、前記搬送ラインにおいて、前記基板が有する有機膜が吸湿し、貼り合わせ工程において、液晶材内に水分が放出されて気泡が生じることが抑制されるとともに、一定の湿度が要求される第2の搬送ラインにおいては、湿度が45%以上に制御されているので、基板が帯電してTFT等の素子に静電破壊が生じるのが防止され、表示不良の発生がより良好に抑制される。
In the present invention, in the transport line, the organic film of the substrate absorbs moisture, and in the bonding step, it is suppressed that moisture is released into the liquid crystal material to generate bubbles, and a certain humidity is required. In the second transport line, the humidity is controlled to be 45% or more, so that the substrate is charged and electrostatic breakdown is prevented from occurring in elements such as TFTs, and the occurrence of display defects is further suppressed. Is done.
本発明に係る液晶表示装置の製造方法は、前記一方の基板の配向膜を焼成した後、配向処理を施し、真空脱気するために前記基板を搬送する搬送ラインの環境湿度を45.5%以下に制御することを特徴とする。
In the method for manufacturing a liquid crystal display device according to the present invention, after the alignment film of the one substrate is baked, the alignment process is performed, and the environmental humidity of the transfer line for transferring the substrate for vacuum degassing is 45.5%. Control is as follows.
本発明においては、前記基板が有する有機膜が吸湿するのがより良好に抑制される。
In the present invention, moisture absorption of the organic film of the substrate can be suppressed better.
本発明に係る液晶表示装置の製造方法は、少なくとも一方の基板が有機材料を含む有機膜を有する、一対の基板夫々に配向膜を形成し、形成した各配向膜を焼成し、焼成した各配向膜に配向処理を施し、両基板をシール材により貼り合わせ、該シール材に設けた注入孔から液晶材を注入して該注入孔を封止する液晶表示装置の製造方法において、前記一方の基板の配向膜を焼成した後、配向処理を施し、他方の基板と貼り合わせるために前記基板を搬送する搬送ラインと、両基板を貼り合わせ、前記液晶材を前記注入孔から注入し、該注入孔を封止するために前記両基板を搬送する搬送ラインとの環境湿度を45.5%以下に制御することを特徴とする。
In the method for manufacturing a liquid crystal display device according to the present invention, at least one substrate has an organic film containing an organic material, an alignment film is formed on each of the pair of substrates, the formed alignment films are baked, and the baked alignments In the method of manufacturing a liquid crystal display device, in which an orientation treatment is performed on the film, both substrates are bonded together with a sealing material, a liquid crystal material is injected from an injection hole provided in the sealing material, and the injection hole is sealed. After the alignment film is baked, an alignment treatment is performed, and a transfer line for transferring the substrate to be bonded to the other substrate, the substrates are bonded, the liquid crystal material is injected from the injection hole, and the injection hole In order to seal, the environmental humidity with the transfer line for transferring both the substrates is controlled to 45.5% or less.
本発明においては、前記搬送ラインの環境湿度が45.5%以下であるので、該搬送ラインにおいて、前記基板が有する有機膜が吸湿し、貼り合わせ工程、液晶材の注入工程、及び注入孔の封止工程において、液晶材内に水分が放出されて気泡が生じ、即ち液晶が配向しない部分となって、表示に不具合が生じることが抑制される。
In the present invention, since the environmental humidity of the transfer line is 45.5% or less, the organic film of the substrate absorbs moisture in the transfer line, the bonding step, the liquid crystal material injection step, and the injection hole In the sealing step, moisture is released into the liquid crystal material to generate bubbles, that is, a portion where the liquid crystal is not aligned, thereby preventing a display defect.
本発明に係る液晶表示装置の製造方法は、前記搬送ラインに対応して配される装置の環境湿度も45.5%以下に制御することを特徴とする。
The method for manufacturing a liquid crystal display device according to the present invention is characterized in that the environmental humidity of the device arranged corresponding to the transport line is also controlled to 45.5% or less.
本発明においては、前記基板が有する有機膜が吸湿することがより良好に抑制される。
In the present invention, the organic film of the substrate is better suppressed from absorbing moisture.
本発明に係る液晶表示装置の製造方法は、前記環境湿度は45%以下であることを特徴とする。
The method for manufacturing a liquid crystal display device according to the present invention is characterized in that the environmental humidity is 45% or less.
本発明においては、前記基板が有する有機膜が吸湿することがより良好に抑制される。
In the present invention, the organic film of the substrate is better suppressed from absorbing moisture.
本発明に係る液晶表示装置の製造方法は、前記環境湿度は35%以上であることを特徴とする。
The method for manufacturing a liquid crystal display device according to the present invention is characterized in that the environmental humidity is 35% or more.
本発明においては、環境湿度の下限が35%であるので、自然放電速度が上がり、基板が帯電してTFT等の素子の静電破壊が生じることが抑制されている。
従って、本発明においては、液晶層における気泡の発生の抑制と、素子の静電破壊による不良の発生の抑制とを両立させることができる。 In the present invention, since the lower limit of the environmental humidity is 35%, the natural discharge rate is increased, and the substrate is charged and electrostatic breakdown of elements such as TFTs is suppressed.
Therefore, in the present invention, it is possible to achieve both suppression of the generation of bubbles in the liquid crystal layer and suppression of the generation of defects due to electrostatic breakdown of the element.
従って、本発明においては、液晶層における気泡の発生の抑制と、素子の静電破壊による不良の発生の抑制とを両立させることができる。 In the present invention, since the lower limit of the environmental humidity is 35%, the natural discharge rate is increased, and the substrate is charged and electrostatic breakdown of elements such as TFTs is suppressed.
Therefore, in the present invention, it is possible to achieve both suppression of the generation of bubbles in the liquid crystal layer and suppression of the generation of defects due to electrostatic breakdown of the element.
本発明によれば、一方の基板を真空脱気した後、他方の基板と貼り合わせるために搬送する搬送ラインの環境湿度を45.5%以下に制御するので、搬送ラインにおいて、前記基板が有する有機膜が吸湿し、貼り合わせ工程において、液晶材内に水分が放出されて気泡が生じ、表示不良が生じることが抑制され、良好な表示品位を有する液晶表示装置を高歩留で製造することができる。そして、設計変更を行う必要がなく、既存の空気調節機を用いて環境湿度を制御することが可能であるので、新たに設備を設けたりする必要がない。
According to the present invention, after the substrate is vacuum degassed, the environmental humidity of the transport line that is transported to be bonded to the other substrate is controlled to 45.5% or less. The organic film absorbs moisture, and in the bonding process, moisture is released into the liquid crystal material, bubbles are generated, display defects are suppressed, and a liquid crystal display device having good display quality is manufactured with high yield. Can do. And it is not necessary to change the design, and it is possible to control the environmental humidity using an existing air conditioner, so that it is not necessary to newly install equipment.
以下、本発明をその実施の形態を示す図面に基づいて具体的に説明する。
実施の形態1.
図1は本発明の液晶表示装置を備える、実施の形態1に係るテレビジョン受信機(以下、TV受信機という)100を示す模式的斜視図、図2は実施の形態1に係る表示パネル6を示す模式的断面図、図3は実施の形態1に係るTFT基板1の画素を示す模式的平面図、図4はTFT基板1のゲート配線11とソース配線12とが交叉する部分を示す模式的断面図である。 Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof.
Embodiment 1 FIG.
FIG. 1 is a schematic perspective view showing a television receiver (hereinafter, referred to as a TV receiver) 100 according toEmbodiment 1 including the liquid crystal display device of the present invention, and FIG. 2 is a display panel 6 according to Embodiment 1. FIG. 3 is a schematic plan view showing a pixel of the TFT substrate 1 according to Embodiment 1, and FIG. 4 is a schematic view showing a portion where the gate wiring 11 and the source wiring 12 of the TFT substrate 1 cross each other. FIG.
実施の形態1.
図1は本発明の液晶表示装置を備える、実施の形態1に係るテレビジョン受信機(以下、TV受信機という)100を示す模式的斜視図、図2は実施の形態1に係る表示パネル6を示す模式的断面図、図3は実施の形態1に係るTFT基板1の画素を示す模式的平面図、図4はTFT基板1のゲート配線11とソース配線12とが交叉する部分を示す模式的断面図である。 Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof.
FIG. 1 is a schematic perspective view showing a television receiver (hereinafter, referred to as a TV receiver) 100 according to
TV受信機100は、映像を表示する表示パネル6を備える横長の表示モジュール7と、アンテナ(不図示)から放送波を受信するチューナ22と、符号化された放送波を復号するデコーダ23とを備える。TV受信機100は、チューナ22にて受信した放送波をデコーダ23で復号し、復号した情報に基づいて表示モジュール7に映像を表示する。TV受信機100の下部には、TV受信機100を支持するスタンド24を設けてある。
The TV receiver 100 includes a horizontally long display module 7 that includes a display panel 6 that displays video, a tuner 22 that receives broadcast waves from an antenna (not shown), and a decoder 23 that decodes encoded broadcast waves. Prepare. The TV receiver 100 decodes the broadcast wave received by the tuner 22 by the decoder 23 and displays an image on the display module 7 based on the decoded information. A stand 24 that supports the TV receiver 100 is provided below the TV receiver 100.
表示モジュール7は例えばエッジライト型である場合、表示パネル3と、例えば3枚の光学シート(以下、不図示)と、導光板と、反射シートと、シャーシとを備える。
表示モジュール7は、前後に縦姿勢で配置された前キャビネット8及び後キャビネット9に縦姿勢で収容されている。前キャビネット8は表示モジュール7の周縁部を覆う矩形状の枠体であり、中央に矩形の開口を有する。前キャビネット8は例えばアルミニウム材からなる。後キャビネット9は、前側が開放された矩形のトレイ状をなし、例えばプラスチック材からなる。尚、前キャビネット8及び後キャビネット9は他の材料から構成してもよい。 For example, when thedisplay module 7 is an edge light type, the display module 7 includes a display panel 3, for example, three optical sheets (hereinafter, not shown), a light guide plate, a reflection sheet, and a chassis.
Thedisplay module 7 is accommodated in a vertical posture in a front cabinet 8 and a rear cabinet 9 that are arranged in a vertical posture in the front-rear direction. The front cabinet 8 is a rectangular frame that covers the peripheral edge of the display module 7 and has a rectangular opening in the center. The front cabinet 8 is made of, for example, an aluminum material. The rear cabinet 9 has a rectangular tray shape with the front side open, and is made of, for example, a plastic material. The front cabinet 8 and the rear cabinet 9 may be made of other materials.
表示モジュール7は、前後に縦姿勢で配置された前キャビネット8及び後キャビネット9に縦姿勢で収容されている。前キャビネット8は表示モジュール7の周縁部を覆う矩形状の枠体であり、中央に矩形の開口を有する。前キャビネット8は例えばアルミニウム材からなる。後キャビネット9は、前側が開放された矩形のトレイ状をなし、例えばプラスチック材からなる。尚、前キャビネット8及び後キャビネット9は他の材料から構成してもよい。 For example, when the
The
前キャビネット8及び後キャビネット9の上下及び左右寸法は略同一であり、互いの周縁部分が対向する。表示パネル3の上下及び左右寸法は、前キャビネット8の開口よりも若干大きく、表示パネル6の周縁部分は前キャビネット8の内縁部分と対向している。
The vertical and horizontal dimensions of the front cabinet 8 and the rear cabinet 9 are substantially the same, and the peripheral portions of each other face each other. The vertical and horizontal dimensions of the display panel 3 are slightly larger than the opening of the front cabinet 8, and the peripheral portion of the display panel 6 faces the inner edge portion of the front cabinet 8.
表示パネル6は、互いに対向するTFT基板1及びCF基板3と、TFT基板1及びCF基板3間に表示媒体層として設けられた液晶層4と、TFT基板1及びCF基板3を互いに接着するとともにTFT基板1及びCF基板3間に液晶層4を封入するために枠状に設けられたシール材5とを備える。TFT基板1及びCF基板3の間隔は、液晶層4内に配されたスペーサ41により一定に保持されている。
The display panel 6 adheres the TFT substrate 1 and the CF substrate 3 facing each other, the liquid crystal layer 4 provided as a display medium layer between the TFT substrate 1 and the CF substrate 3, and the TFT substrate 1 and the CF substrate 3 to each other. In order to enclose the liquid crystal layer 4 between the TFT substrate 1 and the CF substrate 3, a sealing material 5 provided in a frame shape is provided. The distance between the TFT substrate 1 and the CF substrate 3 is held constant by a spacer 41 arranged in the liquid crystal layer 4.
TFT基板1は、図2及び図3に示すように、例えばガラス基板等の絶縁基板10上に互いに平行に延びるように設けられた複数のゲート配線11と、各ゲート配線の間に夫々設けられ、互いに平行に延びる複数の容量配線13と、各ゲート配線と交叉する方向に互いに平行に延びるように設けられた複数のソース配線12と、各ゲート配線及び各ソース配線の交叉部分毎、すなわち、画素毎に夫々設けられた複数のTFT20と、マトリクス状に設けられ、各TFT20に夫々接続された複数の画素電極18と、各画素電極18を覆うように設けられた配向膜19とを備えている。図3において、配向膜19は省略している。
As shown in FIGS. 2 and 3, the TFT substrate 1 is provided between a plurality of gate wirings 11 provided so as to extend in parallel to each other on an insulating substrate 10 such as a glass substrate, and the gate wirings. A plurality of capacitor lines 13 extending in parallel with each other, a plurality of source lines 12 provided so as to extend in parallel with each other in a direction crossing each gate line, and each crossing portion of each gate line and each source line, that is, A plurality of TFTs 20 provided for each pixel, a plurality of pixel electrodes 18 provided in a matrix and connected to each TFT 20, and an alignment film 19 provided so as to cover each pixel electrode 18. Yes. In FIG. 3, the alignment film 19 is omitted.
図4に示すように、TFT基板1のゲート配線11とソース配線12との交叉部分において、絶縁基板10上に形成されたゲート配線11と、ソース配線12との間には、層間絶縁膜14及びゲート絶縁膜15が順に積層されている。なお、図4においては、層間絶縁膜14及びゲート絶縁膜15が順に積層されている場合を示しているが、層間絶縁膜14は形成しないことにしてもよい。
As shown in FIG. 4, an interlayer insulating film 14 is interposed between the gate wiring 11 formed on the insulating substrate 10 and the source wiring 12 at the intersection of the gate wiring 11 and the source wiring 12 of the TFT substrate 1. And the gate insulating film 15 is laminated | stacked in order. Although FIG. 4 shows the case where the interlayer insulating film 14 and the gate insulating film 15 are sequentially stacked, the interlayer insulating film 14 may not be formed.
層間絶縁膜14は、例えばSOG(スピンオンガラス)材料、又は上述のアクリル樹脂等の有機材料を用いてなる。
そして、ソース配線12を覆うようにパッシベーション膜16が形成され、パッシベーション膜16を覆うとともに平坦化するように、例えばアクリル樹脂等の有機材料からなる層間絶縁膜17が形成されている。層間絶縁膜17上には、画素電極18がパターン形成されている。 Theinterlayer insulating film 14 is made of, for example, an SOG (spin-on glass) material or an organic material such as the above-described acrylic resin.
Then, apassivation film 16 is formed so as to cover the source wiring 12, and an interlayer insulating film 17 made of an organic material such as acrylic resin is formed so as to cover the passivation film 16 and flatten it. A pixel electrode 18 is patterned on the interlayer insulating film 17.
そして、ソース配線12を覆うようにパッシベーション膜16が形成され、パッシベーション膜16を覆うとともに平坦化するように、例えばアクリル樹脂等の有機材料からなる層間絶縁膜17が形成されている。層間絶縁膜17上には、画素電極18がパターン形成されている。 The
Then, a
ゲート絶縁膜15上で、容量配線13に対応する位置には、容量電極21が形成されている(図3参照)。容量電極21上には画素電極18が形成されている。
A capacitor electrode 21 is formed on the gate insulating film 15 at a position corresponding to the capacitor wiring 13 (see FIG. 3). A pixel electrode 18 is formed on the capacitor electrode 21.
図2に示すように、CF基板3においては、例えばガラス基板等の絶縁基板30上に複数のカラーフィルタ31が形成され、カラーフィルタ31を覆う状態でトップコート膜32が形成されている。トップコート膜32上には共通電極33が形成され、共通電極33上に、配向膜19に対向するように配向膜34が形成されている。なお、図3においては、カラーフィルタ31を覆うようにトップコート膜32を形成した場合について説明しているが、カラーフィルタ31上に直接共通電極33を形成することにしてもよい。
As shown in FIG. 2, in the CF substrate 3, a plurality of color filters 31 are formed on an insulating substrate 30 such as a glass substrate, and a top coat film 32 is formed so as to cover the color filters 31. A common electrode 33 is formed on the topcoat film 32, and an alignment film 34 is formed on the common electrode 33 so as to face the alignment film 19. Although the case where the top coat film 32 is formed so as to cover the color filter 31 is described in FIG. 3, the common electrode 33 may be directly formed on the color filter 31.
図5は、表示パネル6の製造装置200の構成を示すブロック図である。図中、一点鎖線の矢印は、TFT基板1(図中、「TFT」で示す)、及びCF基板3(図中、「CF」で示す)の搬送ラインを示す。図5において、制御装置60と各装置との配線は省略している。
表示パネル6の製造装置200は、配向膜形成装置51、焼成装置52、配向処理装置53、シール材塗布装置54、真空脱気装置55、液晶材滴下装置56、貼り合わせ装置56、シール材硬化装置58、及び制御装置60を備える。 FIG. 5 is a block diagram showing the configuration of themanufacturing apparatus 200 for the display panel 6. In the figure, the one-dot chain line arrows indicate the transfer lines of the TFT substrate 1 (indicated by “TFT” in the figure) and the CF substrate 3 (indicated by “CF” in the figure). In FIG. 5, wiring between the control device 60 and each device is omitted.
Themanufacturing apparatus 200 of the display panel 6 includes an alignment film forming apparatus 51, a baking apparatus 52, an alignment processing apparatus 53, a sealing material applying apparatus 54, a vacuum degassing apparatus 55, a liquid crystal material dropping apparatus 56, a bonding apparatus 56, and a sealing material curing. A device 58 and a control device 60 are provided.
表示パネル6の製造装置200は、配向膜形成装置51、焼成装置52、配向処理装置53、シール材塗布装置54、真空脱気装置55、液晶材滴下装置56、貼り合わせ装置56、シール材硬化装置58、及び制御装置60を備える。 FIG. 5 is a block diagram showing the configuration of the
The
配向膜形成装置51は、TFT基板1,CF基板3夫々に、例えばポリイミド等を塗布し、配向膜19,34を形成する。
焼成装置52は、配向膜19が形成されたTFT基板1,CF基板3夫々に対し焼成処理を行う。
配向処理装置53は、焼成処理が行われたTFT基板1,CF基板3夫々の配向膜19,34に直線偏光紫外線を照射するか、又は配向膜19,34の表面にラビング処理を行い、配向膜19,34に異方性を生じさせる。ラビング処理は、ラビングローラに巻回されたラビング布を用いて行う。 The alignmentfilm forming apparatus 51 applies polyimide, for example, to the TFT substrate 1 and the CF substrate 3 to form alignment films 19 and 34.
Thebaking apparatus 52 performs a baking process on each of the TFT substrate 1 and the CF substrate 3 on which the alignment film 19 is formed.
Thealignment processing device 53 irradiates the alignment films 19 and 34 of the TFT substrate 1 and the CF substrate 3 subjected to the baking treatment with linearly polarized ultraviolet rays or performs a rubbing process on the surfaces of the alignment films 19 and 34 to align the alignment films 19 and 34. Anisotropy is generated in the films 19 and 34. The rubbing process is performed using a rubbing cloth wound around a rubbing roller.
焼成装置52は、配向膜19が形成されたTFT基板1,CF基板3夫々に対し焼成処理を行う。
配向処理装置53は、焼成処理が行われたTFT基板1,CF基板3夫々の配向膜19,34に直線偏光紫外線を照射するか、又は配向膜19,34の表面にラビング処理を行い、配向膜19,34に異方性を生じさせる。ラビング処理は、ラビングローラに巻回されたラビング布を用いて行う。 The alignment
The
The
シール材塗布装置54は、配向処理が行われたCF基板3の配向膜34の外周側に枠状にシール材5を塗布する。
真空脱気装置55は、TFT基板1,CF基板3夫々に対し、真空脱気処理を行う。
液晶材滴下装置56は、液晶材を滴下するためのノズルを有し、CF基板3の面方向に相対移動可能である液晶滴下ヘッド(不図示)を備える。液晶滴下ヘッドにより、シール材5の内側の複数部分に液晶材が滴下される。 The sealingmaterial application device 54 applies the sealing material 5 in a frame shape on the outer peripheral side of the alignment film 34 of the CF substrate 3 on which the alignment process has been performed.
Thevacuum deaerator 55 performs a vacuum deaeration process on each of the TFT substrate 1 and the CF substrate 3.
The liquid crystalmaterial dropping device 56 has a nozzle for dropping the liquid crystal material, and includes a liquid crystal dropping head (not shown) that is relatively movable in the surface direction of the CF substrate 3. The liquid crystal dropping head drops the liquid crystal material onto a plurality of portions inside the sealing material 5.
真空脱気装置55は、TFT基板1,CF基板3夫々に対し、真空脱気処理を行う。
液晶材滴下装置56は、液晶材を滴下するためのノズルを有し、CF基板3の面方向に相対移動可能である液晶滴下ヘッド(不図示)を備える。液晶滴下ヘッドにより、シール材5の内側の複数部分に液晶材が滴下される。 The sealing
The
The liquid crystal
貼り合わせ装置57は、真空チャンバ内に、TFT基板1,CF基板3夫々を水平状態で保持する、2つのステージ(以上、不図示)を備えてなり、この2つのステージを接近させてTFT基板1とCF基板3とを貼り合わせる。
シール材硬化装置58は、紫外線硬化型のシール材を用いる場合、シール材5に対して紫外線照射を行う。シール材5が紫外線硬化型でない場合、シール材硬化装置58は該シール材5を硬化するように構成される。 Thebonding apparatus 57 includes two stages (not shown) that hold the TFT substrate 1 and the CF substrate 3 in a horizontal state in a vacuum chamber. 1 and the CF substrate 3 are bonded together.
The sealingmaterial curing device 58 irradiates the sealing material 5 with ultraviolet rays when using an ultraviolet curable sealing material. When the sealing material 5 is not an ultraviolet curing type, the sealing material curing device 58 is configured to cure the sealing material 5.
シール材硬化装置58は、紫外線硬化型のシール材を用いる場合、シール材5に対して紫外線照射を行う。シール材5が紫外線硬化型でない場合、シール材硬化装置58は該シール材5を硬化するように構成される。 The
The sealing
制御装置60は、配向膜形成装置51、焼成装置52、配向処理装置53、シール材塗布装置54、真空脱気装置55、液晶材滴下装置56、貼り合わせ装置57、及びシール材硬化装置58の各装置を集中的に制御するCPU(Central Processing Unit)と、表示パネル6の製造に関する製造情報や各種のプログラム等を記憶する記憶部とを備える。
各装置間のTFT基板1,CF基板3の搬送は、コンベア及びロボット等の搬送装置により行われる。 Thecontrol device 60 includes an alignment film forming device 51, a baking device 52, an alignment processing device 53, a sealing material applying device 54, a vacuum degassing device 55, a liquid crystal material dropping device 56, a bonding device 57, and a sealing material curing device 58. A central processing unit (CPU) that centrally controls each device and a storage unit that stores manufacturing information, various programs, and the like related to the manufacturing of the display panel 6 are provided.
TheTFT substrate 1 and the CF substrate 3 are transferred between the devices by a transfer device such as a conveyor or a robot.
各装置間のTFT基板1,CF基板3の搬送は、コンベア及びロボット等の搬送装置により行われる。 The
The
以下、本実施の形態に係る表示パネル6の製造方法について説明する。
図6は、表示パネル6の製造の処理手順を示すフローチャートである。
制御装置60は、絶縁基板10上に、TFT20及び画素電極18等をパターニングした後、配向膜形成装置51により、画素電極18を覆うように例えばポリイミド等を用いて配向膜19を形成する(S1)。
制御装置60は、焼成装置52により、配向膜19を200℃で1時間焼成する(S2)。 Hereinafter, a method for manufacturing thedisplay panel 6 according to the present embodiment will be described.
FIG. 6 is a flowchart showing a processing procedure for manufacturing thedisplay panel 6.
Thecontrol device 60 patterns the TFT 20, the pixel electrode 18 and the like on the insulating substrate 10, and then forms the alignment film 19 using, for example, polyimide so as to cover the pixel electrode 18 by the alignment film forming device 51 (S1). ).
Thecontroller 60 uses the firing device 52 to fire the alignment film 19 at 200 ° C. for 1 hour (S2).
図6は、表示パネル6の製造の処理手順を示すフローチャートである。
制御装置60は、絶縁基板10上に、TFT20及び画素電極18等をパターニングした後、配向膜形成装置51により、画素電極18を覆うように例えばポリイミド等を用いて配向膜19を形成する(S1)。
制御装置60は、焼成装置52により、配向膜19を200℃で1時間焼成する(S2)。 Hereinafter, a method for manufacturing the
FIG. 6 is a flowchart showing a processing procedure for manufacturing the
The
The
制御装置60は、焼成した配向膜19に配向処理を施す(S3)。
制御装置60は、上述したように、配向処理装置53により、直線偏光紫外線を配向膜19上に照射し、偏光方向の高分子鎖を選択的に反応させて異方性を発生させて液晶配向能を付与するか、又は配向膜19の表面をラビングし、配向膜19の表面の高分子鎖を一定方向に潰れさせて配向膜19上に異方性を生じさせ、液晶分子の配向方向を規定する。
そして、制御装置60は、TFT基板1を真空脱気装置55に搬送して真空脱気を行った後(S4)、貼り合わせ装置57へ搬送し、真空下でCF基板2と貼り合わせる(S5)。 Thecontrol device 60 performs an alignment process on the baked alignment film 19 (S3).
As described above, thecontrol device 60 irradiates linearly polarized ultraviolet rays onto the alignment film 19 by the alignment processing device 53 and selectively reacts the polymer chains in the polarization direction to generate anisotropy, thereby aligning the liquid crystal. The surface of the alignment film 19 is rubbed, the polymer chain on the surface of the alignment film 19 is crushed in a certain direction to cause anisotropy on the alignment film 19, and the alignment direction of the liquid crystal molecules is changed. Stipulate.
Then, thecontrol device 60 transports the TFT substrate 1 to the vacuum degassing device 55 and performs vacuum degassing (S4), and then transports it to the bonding device 57 and bonds it to the CF substrate 2 under vacuum (S5). ).
制御装置60は、上述したように、配向処理装置53により、直線偏光紫外線を配向膜19上に照射し、偏光方向の高分子鎖を選択的に反応させて異方性を発生させて液晶配向能を付与するか、又は配向膜19の表面をラビングし、配向膜19の表面の高分子鎖を一定方向に潰れさせて配向膜19上に異方性を生じさせ、液晶分子の配向方向を規定する。
そして、制御装置60は、TFT基板1を真空脱気装置55に搬送して真空脱気を行った後(S4)、貼り合わせ装置57へ搬送し、真空下でCF基板2と貼り合わせる(S5)。 The
As described above, the
Then, the
CF基板2は以下のようにして製造される。
制御装置60は、絶縁基板30上に、カラーフィルタ31、ブラックマトリクス、及び共通電極34等を形成した後、配向膜形成装置51により、例えばポリイミド等を用いて共通電極34上に配向膜34を形成し(S11)、焼成装置52により、200℃で1時間焼成する(S12)。
制御装置60は、焼成した配向膜34に、配向処理装置53により配向処理を施す(S13)。配向処理は、配向膜34に直線偏光紫外線を高分子膜上に照射し、又は配向膜34の表面をラビングすることによって、高分子膜に異方性を生じさせる。 TheCF substrate 2 is manufactured as follows.
Thecontrol device 60 forms the color filter 31, the black matrix, the common electrode 34, and the like on the insulating substrate 30, and then uses the alignment film forming device 51 to form the alignment film 34 on the common electrode 34 using, for example, polyimide. It is formed (S11), and is baked at 200 ° C. for 1 hour by the baking device 52 (S12).
Thecontrol device 60 performs alignment processing on the baked alignment film 34 by the alignment processing device 53 (S13). In the alignment treatment, the alignment film 34 is irradiated with linearly polarized ultraviolet light on the polymer film, or the surface of the alignment film 34 is rubbed to cause anisotropy in the polymer film.
制御装置60は、絶縁基板30上に、カラーフィルタ31、ブラックマトリクス、及び共通電極34等を形成した後、配向膜形成装置51により、例えばポリイミド等を用いて共通電極34上に配向膜34を形成し(S11)、焼成装置52により、200℃で1時間焼成する(S12)。
制御装置60は、焼成した配向膜34に、配向処理装置53により配向処理を施す(S13)。配向処理は、配向膜34に直線偏光紫外線を高分子膜上に照射し、又は配向膜34の表面をラビングすることによって、高分子膜に異方性を生じさせる。 The
The
The
制御装置60は、シール材塗布装置54により、CF基板3の周縁部の内側に枠状に接着性を有するシール材5を塗布する。例えばディスペンサで塗布する等の方法によってシール材料をパターニングし、焼成によりシール材料を硬化させて、枠状のシール材5を形成する(S14)。
The control device 60 applies the sealing material 5 having adhesiveness in a frame shape to the inside of the peripheral edge portion of the CF substrate 3 by the sealing material application device 54. For example, the sealing material is patterned by a method such as application with a dispenser, and the sealing material is cured by baking to form the frame-shaped sealing material 5 (S14).
そして、制御装置60は、シール材が形成されたCF基板3に対し真空脱気装置55により真空脱気を行った(S15)後、シール材5の内側に液晶材滴下装置56により液晶材を滴下する(S16)。液晶材の滴下は、液晶材滴下装置56の前記液晶滴下ヘッドをTFT基板1の全面に亘って移動させて行う。
そして、制御装置60は液晶材が滴下されたCF基板3を貼り合わせ装置57へ搬送し、S5へ処理を進める。
制御装置60は、貼り合わされたTFT基板1とCF基板3とをシール材硬化装置58へ搬送し、例えば紫外線をシール材5に照射して硬化させる(S6)。 Then, thecontrol device 60 performs vacuum deaeration on the CF substrate 3 on which the sealing material is formed by the vacuum deaeration device 55 (S15), and thereafter, the liquid crystal material is placed inside the sealing material 5 by the liquid crystal material dropping device 56. It is dropped (S16). The liquid crystal material is dropped by moving the liquid crystal dropping head of the liquid crystal material dropping device 56 over the entire surface of the TFT substrate 1.
Then, thecontrol device 60 conveys the CF substrate 3 onto which the liquid crystal material has been dropped to the bonding device 57, and advances the process to S5.
Thecontrol device 60 conveys the bonded TFT substrate 1 and CF substrate 3 to the seal material curing device 58, and irradiates the seal material 5 with, for example, ultraviolet rays to cure (S6).
そして、制御装置60は液晶材が滴下されたCF基板3を貼り合わせ装置57へ搬送し、S5へ処理を進める。
制御装置60は、貼り合わされたTFT基板1とCF基板3とをシール材硬化装置58へ搬送し、例えば紫外線をシール材5に照射して硬化させる(S6)。 Then, the
Then, the
The
本実施の形態においては、真空脱気装置55と貼り合わせ装置57との間の搬送ラインの環境湿度を45.5%以下に制御している。
図7は、真空脱気装置55から貼り合わせ装置57までの製造エリア25を示す模式的断面図である。
TFT基板1は、紙面の奥側から手前側へ搬送装置27により搬送されている。
制御装置60は、空気調節機26により、製造エリア25のうち、少なくとも前記搬送ラインの環境湿度を45.5%以下に制御している。真空脱気装置55及び貼り合わせ装置57の環境湿度も45.5%以下に制御するのが好ましい。前記搬送ラインの環境湿度は45%以下であるのがより好ましい。 In the present embodiment, the environmental humidity of the transfer line between thevacuum deaeration device 55 and the bonding device 57 is controlled to 45.5% or less.
FIG. 7 is a schematic cross-sectional view showing themanufacturing area 25 from the vacuum degassing device 55 to the bonding device 57.
TheTFT substrate 1 is conveyed by the conveying device 27 from the back side to the near side of the drawing.
Thecontrol device 60 controls at least the environmental humidity of the transfer line in the manufacturing area 25 to 45.5% or less by the air conditioner 26. The environmental humidity of the vacuum degassing device 55 and the bonding device 57 is preferably controlled to 45.5% or less. The environmental humidity of the transfer line is more preferably 45% or less.
図7は、真空脱気装置55から貼り合わせ装置57までの製造エリア25を示す模式的断面図である。
TFT基板1は、紙面の奥側から手前側へ搬送装置27により搬送されている。
制御装置60は、空気調節機26により、製造エリア25のうち、少なくとも前記搬送ラインの環境湿度を45.5%以下に制御している。真空脱気装置55及び貼り合わせ装置57の環境湿度も45.5%以下に制御するのが好ましい。前記搬送ラインの環境湿度は45%以下であるのがより好ましい。 In the present embodiment, the environmental humidity of the transfer line between the
FIG. 7 is a schematic cross-sectional view showing the
The
The
前記搬送ラインの環境湿度が45.5%以下である場合、該搬送ラインにおいて、TFT基板1が有する層間絶縁膜17等の有機材料が吸湿し、貼り合わせ以降のいずれかの時点で液晶層4内に水分が放出されて気泡が生じ、即ち液晶が配向しない部分となって表示に不具合が生じることが抑制される。
従って、本実施の形態においては、表示不良の発生が抑制され、良好な表示品位を有する液晶表示装置を高歩留で製造することができる。
そして、本実施の形態においては、特許文献1のように配向膜のパターンを変える等の設計変更を行う必要がなく、既存の空気調節機26を用いて環境湿度を制御することが可能であるので、新たに設備を設けたりする必要がない。 When the environmental humidity of the transfer line is 45.5% or less, the organic material such as theinterlayer insulating film 17 included in the TFT substrate 1 absorbs moisture in the transfer line, and the liquid crystal layer 4 at any time after bonding. It is possible to suppress the occurrence of defects in the display due to the release of moisture and the generation of bubbles, that is, the liquid crystal is not aligned.
Therefore, in the present embodiment, the occurrence of display defects is suppressed, and a liquid crystal display device having a good display quality can be manufactured with a high yield.
And in this Embodiment, it is not necessary to perform design changes, such as changing the pattern of an alignment film likepatent document 1, and it is possible to control environmental humidity using the existing air conditioner 26. FIG. So there is no need to install new equipment.
従って、本実施の形態においては、表示不良の発生が抑制され、良好な表示品位を有する液晶表示装置を高歩留で製造することができる。
そして、本実施の形態においては、特許文献1のように配向膜のパターンを変える等の設計変更を行う必要がなく、既存の空気調節機26を用いて環境湿度を制御することが可能であるので、新たに設備を設けたりする必要がない。 When the environmental humidity of the transfer line is 45.5% or less, the organic material such as the
Therefore, in the present embodiment, the occurrence of display defects is suppressed, and a liquid crystal display device having a good display quality can be manufactured with a high yield.
And in this Embodiment, it is not necessary to perform design changes, such as changing the pattern of an alignment film like
焼成装置52から真空脱気装置55までの搬送ラインの環境湿度も45.5%以下に制御するのが好ましい。各搬送ラインの両端側の装置の環境湿度も45.5%以下に制御するのが好ましい。環境湿度は45%以下であるのがより好ましい。
これにより、気泡の発生がより良好に抑制される。 It is preferable to control the environmental humidity of the transfer line from thebaking device 52 to the vacuum deaeration device 55 to 45.5% or less. It is preferable to control the environmental humidity of the devices on both ends of each conveyance line to 45.5% or less. The environmental humidity is more preferably 45% or less.
Thereby, generation | occurrence | production of a bubble is suppressed more favorably.
これにより、気泡の発生がより良好に抑制される。 It is preferable to control the environmental humidity of the transfer line from the
Thereby, generation | occurrence | production of a bubble is suppressed more favorably.
図8は、60型の液晶表示装置100を製造する場合に真空脱気装置55と貼り合わせ装置57との間の搬送ラインの環境湿度と気泡発生率との関係を調べた結果を示すグラフである。横軸は前記搬送ラインの環境湿度(%)、縦軸は気泡発生率(%)である。
図8より、搬送ラインの環境湿度が45.5%以下である場合、気泡発生率は略0.5%以下であり、環境湿度が45%である場合、気泡発生率は略0.4%以下であり、気泡が良好に抑制されていることが分かる。 FIG. 8 is a graph showing the results of examining the relationship between the environmental humidity of the transfer line between thevacuum degassing device 55 and the bonding device 57 and the bubble generation rate when the 60-type liquid crystal display device 100 is manufactured. is there. The horizontal axis represents the environmental humidity (%) of the transfer line, and the vertical axis represents the bubble generation rate (%).
From FIG. 8, when the environmental humidity of the transfer line is 45.5% or less, the bubble generation rate is about 0.5% or less, and when the environmental humidity is 45%, the bubble generation rate is about 0.4%. It is as follows and it can be seen that the bubbles are well suppressed.
図8より、搬送ラインの環境湿度が45.5%以下である場合、気泡発生率は略0.5%以下であり、環境湿度が45%である場合、気泡発生率は略0.4%以下であり、気泡が良好に抑制されていることが分かる。 FIG. 8 is a graph showing the results of examining the relationship between the environmental humidity of the transfer line between the
From FIG. 8, when the environmental humidity of the transfer line is 45.5% or less, the bubble generation rate is about 0.5% or less, and when the environmental humidity is 45%, the bubble generation rate is about 0.4%. It is as follows and it can be seen that the bubbles are well suppressed.
実施の形態2.
図9は、実施の形態2に係る製造エリア28を示す模式的断面図である。
製造エリア28は、真空脱気装置55から貼り合わせ装置57までの製造エリア29を内設する。製造エリア28内において、TFT基板1は実施の形態1と同様に、制御装置60により、紙面の奥側から手前側へ搬送装置43にて搬送され、空気調節機42により、環境湿度が45.5%以下に制御されている。環境湿度は45%以下であるのが好ましい。
製造エリア28の外側には、例えば配向膜形成装置51から焼成装置52までTFT基板1を搬送させる搬送ライン等で、TFT基板1の帯電を防止するため一定の環境湿度が要求される搬送ラインが併設されている。制御装置60は、空気調節機44により、この搬送ラインの環境湿度を45%以上に制御している。搬送ラインの両端側の装置の環境湿度も45%以上に制御するのが好ましい。Embodiment 2. FIG.
FIG. 9 is a schematic cross-sectional view showing themanufacturing area 28 according to the second embodiment.
Themanufacturing area 28 includes a manufacturing area 29 from the vacuum degassing device 55 to the bonding device 57. In the manufacturing area 28, the TFT substrate 1 is transported by the transport device 43 from the back side to the near side of the paper surface by the control device 60, and the environmental humidity is 45.degree. It is controlled to 5% or less. The environmental humidity is preferably 45% or less.
Outside themanufacturing area 28, for example, a transport line for transporting the TFT substrate 1 from the alignment film forming device 51 to the baking device 52, and a transport line that requires a certain environmental humidity to prevent the TFT substrate 1 from being charged. It is attached. The control device 60 controls the environmental humidity of this transport line to 45% or more by the air conditioner 44. It is preferable to control the environmental humidity of the devices on both ends of the transport line to 45% or more.
図9は、実施の形態2に係る製造エリア28を示す模式的断面図である。
製造エリア28は、真空脱気装置55から貼り合わせ装置57までの製造エリア29を内設する。製造エリア28内において、TFT基板1は実施の形態1と同様に、制御装置60により、紙面の奥側から手前側へ搬送装置43にて搬送され、空気調節機42により、環境湿度が45.5%以下に制御されている。環境湿度は45%以下であるのが好ましい。
製造エリア28の外側には、例えば配向膜形成装置51から焼成装置52までTFT基板1を搬送させる搬送ライン等で、TFT基板1の帯電を防止するため一定の環境湿度が要求される搬送ラインが併設されている。制御装置60は、空気調節機44により、この搬送ラインの環境湿度を45%以上に制御している。搬送ラインの両端側の装置の環境湿度も45%以上に制御するのが好ましい。
FIG. 9 is a schematic cross-sectional view showing the
The
Outside the
本実施の形態においては、真空脱気装置55と貼り合わせ装置57との間の搬送ラインにおいて、TFT基板1が有する層間絶縁膜17が吸湿し、液晶層4内に水分が放出されて気泡が生じ、即ち液晶が配向しない部分となって、表示に不具合が生じることが抑制されている。
そして、製造エリア28の外側の一定の環境湿度が要求される搬送ラインにおいては、環境湿度が45%以上に制御されているので、TFT基板1が帯電してTFT20に静電破壊が生じることが防止されている。
なお、一定の環境湿度が要求される場合として、他に、配向処理をラビングにより行う場合等が挙げられる。 In the present embodiment, in the transfer line between thevacuum deaeration device 55 and the bonding device 57, the interlayer insulating film 17 of the TFT substrate 1 absorbs moisture, moisture is released into the liquid crystal layer 4, and bubbles are generated. Occurrence, that is, the occurrence of defects in the display due to the portion where the liquid crystal is not aligned is suppressed.
In a transfer line that requires a certain environmental humidity outside themanufacturing area 28, the environmental humidity is controlled to be 45% or more. Therefore, the TFT substrate 1 is charged and the TFT 20 may be electrostatically damaged. It is prevented.
In addition, as a case where a certain environmental humidity is required, there are other cases where the alignment treatment is performed by rubbing.
そして、製造エリア28の外側の一定の環境湿度が要求される搬送ラインにおいては、環境湿度が45%以上に制御されているので、TFT基板1が帯電してTFT20に静電破壊が生じることが防止されている。
なお、一定の環境湿度が要求される場合として、他に、配向処理をラビングにより行う場合等が挙げられる。 In the present embodiment, in the transfer line between the
In a transfer line that requires a certain environmental humidity outside the
In addition, as a case where a certain environmental humidity is required, there are other cases where the alignment treatment is performed by rubbing.
本実施の形態においても、60型の液晶表示装置を製造する場合に製造エリア29内の環境湿度と気泡発生率との関係を調べた結果、製造エリア29内の環境湿度が45.5%以下である場合、気泡発生率は略0.5%以下であり、環境湿度が45%である場合、気泡発生率は略0.4%以下であることが確認された。
Also in this embodiment, as a result of investigating the relationship between the environmental humidity in the manufacturing area 29 and the bubble generation rate when manufacturing a 60-inch liquid crystal display device, the environmental humidity in the manufacturing area 29 is 45.5% or less. The bubble generation rate was about 0.5% or less, and when the environmental humidity was 45%, it was confirmed that the bubble generation rate was about 0.4% or less.
実施の形態3.
図10は、真空脱気装置55から貼り合わせ装置57までの製造エリア46を示す模式的断面図である。
TFT基板1は、紙面の奥側から手前側へ搬送装置48により搬送されている。
制御装置60は、空気調節機47により、製造エリア46の真空脱気装置55と貼り合わせ装置57との間の搬送ラインの環境湿度を35%以上45.5%以下に制御している。真空脱気装置55及び貼り合わせ装置57の環境湿度も35%以上45.5%以下に制御するのが好ましい。環境湿度の上限は45%以下であるのが好ましい。Embodiment 3 FIG.
FIG. 10 is a schematic cross-sectional view showing themanufacturing area 46 from the vacuum degassing device 55 to the bonding device 57.
TheTFT substrate 1 is transported from the back side to the near side of the paper by the transport device 48.
Thecontrol device 60 controls the environmental humidity of the transfer line between the vacuum deaeration device 55 and the bonding device 57 in the manufacturing area 46 to 35% or more and 45.5% or less by the air conditioner 47. The environmental humidity of the vacuum degassing device 55 and the bonding device 57 is also preferably controlled to 35% or more and 45.5% or less. The upper limit of environmental humidity is preferably 45% or less.
図10は、真空脱気装置55から貼り合わせ装置57までの製造エリア46を示す模式的断面図である。
TFT基板1は、紙面の奥側から手前側へ搬送装置48により搬送されている。
制御装置60は、空気調節機47により、製造エリア46の真空脱気装置55と貼り合わせ装置57との間の搬送ラインの環境湿度を35%以上45.5%以下に制御している。真空脱気装置55及び貼り合わせ装置57の環境湿度も35%以上45.5%以下に制御するのが好ましい。環境湿度の上限は45%以下であるのが好ましい。
FIG. 10 is a schematic cross-sectional view showing the
The
The
前記搬送ラインの環境湿度が45.5%以下である場合、前記搬送ラインにおいて、TFT基板1が有する層間絶縁膜17が吸湿し、液晶層4内に水分が放出されて気泡が生じ、即ち液晶が配向しない部分となって、表示に不具合が生じることが抑制される。
そして、環境湿度の下限を35%にしているので、自然放電速度が上がり、TFT20の静電破壊の発生が抑制されている。
以上のように、本実施の形態においては、液晶層4における気泡の発生の抑制と、TFT20の静電破壊による不良の発生の抑制とが両立している。 When the environmental humidity of the transfer line is 45.5% or less, theinterlayer insulating film 17 of the TFT substrate 1 absorbs moisture in the transfer line, and moisture is released into the liquid crystal layer 4 to generate bubbles. It becomes a part which does not orientate and it is suppressed that a malfunction arises in a display.
Since the lower limit of the environmental humidity is 35%, the natural discharge rate is increased and the occurrence of electrostatic breakdown of theTFT 20 is suppressed.
As described above, in the present embodiment, the suppression of the generation of bubbles in theliquid crystal layer 4 and the suppression of the generation of defects due to electrostatic breakdown of the TFT 20 are compatible.
そして、環境湿度の下限を35%にしているので、自然放電速度が上がり、TFT20の静電破壊の発生が抑制されている。
以上のように、本実施の形態においては、液晶層4における気泡の発生の抑制と、TFT20の静電破壊による不良の発生の抑制とが両立している。 When the environmental humidity of the transfer line is 45.5% or less, the
Since the lower limit of the environmental humidity is 35%, the natural discharge rate is increased and the occurrence of electrostatic breakdown of the
As described above, in the present embodiment, the suppression of the generation of bubbles in the
焼成装置52から真空脱気装置55までの搬送ラインの環境湿度も35%以上45.5%以下に制御するのが好ましい。各搬送ラインの両端側の装置の環境湿度も35%以上45.5%以下に制御するのが好ましい。上限は45%以下であるのがより好ましい。
The environmental humidity of the transfer line from the baking device 52 to the vacuum deaeration device 55 is preferably controlled to 35% or more and 45.5% or less. It is preferable to control the environmental humidity of the apparatuses on both ends of each conveyance line to 35% or more and 45.5% or less. The upper limit is more preferably 45% or less.
実施の形態4.
図11は、表示パネル6の製造装置300の構成を示すブロック図である。図中、一点鎖線の矢印は、TFT基板1(図中、「TFT」で示す)、及びCF基板3(図中、「CF」で示す)の搬送ラインを示す。図11において、制御装置60と各装置との配線は省略している。
表示パネル6の製造装置300は、配向膜形成装置61、焼成装置62、配向処理装置63、シール材塗布装置64、貼り合わせ装置65、シール材硬化装置66、液晶材注入装置67、封止装置68、及び制御装置60を備える。なお、TFT基板1とCF基板3との貼り合わせ前に、各基板を真空脱気することにしてもよく、この場合、さらに真空脱気装置を備える。Embodiment 4 FIG.
FIG. 11 is a block diagram illustrating a configuration of themanufacturing apparatus 300 for the display panel 6. In the figure, the one-dot chain line arrows indicate the transfer lines of the TFT substrate 1 (indicated by “TFT” in the figure) and the CF substrate 3 (indicated by “CF” in the figure). In FIG. 11, wiring between the control device 60 and each device is omitted.
Themanufacturing apparatus 300 of the display panel 6 includes an alignment film forming device 61, a baking device 62, an alignment processing device 63, a sealing material applying device 64, a bonding device 65, a sealing material curing device 66, a liquid crystal material injecting device 67, and a sealing device. 68 and a control device 60. Each substrate may be vacuum degassed before the TFT substrate 1 and the CF substrate 3 are bonded together, and in this case, a vacuum degassing device is further provided.
図11は、表示パネル6の製造装置300の構成を示すブロック図である。図中、一点鎖線の矢印は、TFT基板1(図中、「TFT」で示す)、及びCF基板3(図中、「CF」で示す)の搬送ラインを示す。図11において、制御装置60と各装置との配線は省略している。
表示パネル6の製造装置300は、配向膜形成装置61、焼成装置62、配向処理装置63、シール材塗布装置64、貼り合わせ装置65、シール材硬化装置66、液晶材注入装置67、封止装置68、及び制御装置60を備える。なお、TFT基板1とCF基板3との貼り合わせ前に、各基板を真空脱気することにしてもよく、この場合、さらに真空脱気装置を備える。
FIG. 11 is a block diagram illustrating a configuration of the
The
配向膜形成装置61は、TFT基板1,CF基板3夫々に、例えばポリイミド等を塗布し、配向膜19,34を形成する。
焼成装置62は、配向膜が形成されたTFT基板1,CF基板3夫々に対し焼成処理を行う。
配向処理装置63は、焼成処理が行われたTFT基板1,CF基板3夫々の配向膜19,34に直線偏光紫外線を照射するか、又は配向膜19,34の表面にラビング処理を行い、配向膜19,34に異方性を生じさせる。 The alignmentfilm forming device 61 applies, for example, polyimide or the like to the TFT substrate 1 and the CF substrate 3 to form alignment films 19 and 34.
Thefiring device 62 performs a firing process on each of the TFT substrate 1 and the CF substrate 3 on which the alignment film is formed.
Thealignment processing device 63 irradiates the alignment films 19 and 34 of the TFT substrate 1 and the CF substrate 3 subjected to the baking treatment with linearly polarized ultraviolet rays or performs a rubbing process on the surfaces of the alignment films 19 and 34 to align the alignment films 19 and 34. Anisotropy is generated in the films 19 and 34.
焼成装置62は、配向膜が形成されたTFT基板1,CF基板3夫々に対し焼成処理を行う。
配向処理装置63は、焼成処理が行われたTFT基板1,CF基板3夫々の配向膜19,34に直線偏光紫外線を照射するか、又は配向膜19,34の表面にラビング処理を行い、配向膜19,34に異方性を生じさせる。 The alignment
The
The
シール材塗布装置64は、配向処理が行われたCF基板3の配向膜34の外周側に枠状にシール材5を塗布する。
貼り合わせ装置65は、真空チャンバ内に、TFT基板1,CF基板3夫々を水平状態で保持する、2つのステージ(以上、不図示)を備えてなり、この2つのステージを接近させてTFT基板1とCF基板3とを貼り合わせる。
シール材硬化装置66は、紫外線硬化型のシール材を用いる場合、シール材5に対して紫外線照射を行う。シール材5が紫外線硬化型でない場合、シール材硬化装置58は該シール材5を硬化するように構成される。シール材5には、液晶材を注入するための注入孔が設けられている。 The sealingmaterial application device 64 applies the sealing material 5 in a frame shape on the outer peripheral side of the alignment film 34 of the CF substrate 3 on which the alignment process has been performed.
Thebonding apparatus 65 includes two stages (not shown) that hold the TFT substrate 1 and the CF substrate 3 in a horizontal state in a vacuum chamber. 1 and the CF substrate 3 are bonded together.
The sealingmaterial curing device 66 irradiates the sealing material 5 with ultraviolet rays when using an ultraviolet curing sealing material. When the sealing material 5 is not an ultraviolet curing type, the sealing material curing device 58 is configured to cure the sealing material 5. The sealing material 5 is provided with an injection hole for injecting a liquid crystal material.
貼り合わせ装置65は、真空チャンバ内に、TFT基板1,CF基板3夫々を水平状態で保持する、2つのステージ(以上、不図示)を備えてなり、この2つのステージを接近させてTFT基板1とCF基板3とを貼り合わせる。
シール材硬化装置66は、紫外線硬化型のシール材を用いる場合、シール材5に対して紫外線照射を行う。シール材5が紫外線硬化型でない場合、シール材硬化装置58は該シール材5を硬化するように構成される。シール材5には、液晶材を注入するための注入孔が設けられている。 The sealing
The
The sealing
液晶材注入装置67は、真空チャンバを備え、貼り合わせたTFT基板1及びCF基板3と液晶材とを真空チャンバに入れて真空チャンバ内を真空にし、前記注入孔を液晶材に浸漬し、チャンバ内を大気圧に戻すことにより2枚の基板間に液晶材を封入する。
封止装置68は、前記注入孔を封止する。 The liquid crystalmaterial injecting device 67 includes a vacuum chamber, the bonded TFT substrate 1 and CF substrate 3 and the liquid crystal material are put into the vacuum chamber, the inside of the vacuum chamber is evacuated, and the injection hole is immersed in the liquid crystal material. The liquid crystal material is sealed between the two substrates by returning the inside to atmospheric pressure.
The sealingdevice 68 seals the injection hole.
封止装置68は、前記注入孔を封止する。 The liquid crystal
The sealing
制御装置60は、配向膜形成装置61、焼成装置62、配向処理装置63、シール材塗布装置64、貼り合わせ装置65、シール材硬化装置66、液晶材注入装置67、及び封止装置68の各装置を集中的に制御するCPUと、表示パネル6の製造に関する製造情報や各種のプログラム等を記憶する記憶部とを備える。なお、図11において、制御装置60と、各装置との配線は省略している。
各装置間のTFT基板1,CF基板3の搬送は、コンベア及びロボット等の搬送装置により行われる。 Thecontrol device 60 includes an alignment film forming device 61, a baking device 62, an alignment processing device 63, a sealing material applying device 64, a bonding device 65, a sealing material curing device 66, a liquid crystal material injecting device 67, and a sealing device 68. A CPU that centrally controls the apparatus and a storage unit that stores manufacturing information relating to the manufacture of the display panel 6, various programs, and the like are provided. In FIG. 11, wiring between the control device 60 and each device is omitted.
TheTFT substrate 1 and the CF substrate 3 are transferred between the devices by a transfer device such as a conveyor or a robot.
各装置間のTFT基板1,CF基板3の搬送は、コンベア及びロボット等の搬送装置により行われる。 The
The
以下、本実施の形態に係る表示パネル6の製造方法について説明する。
図12は、表示パネル6の製造の処理手順を示すフローチャートである。
制御装置60は、絶縁基板10上に、TFT20及び画素電極18等をパターニングした後、配向膜形成装置61により、画素電極18を覆うように例えばポリイミド等を用いて配向膜19を形成する(S1)。
制御装置60は、焼成装置62により、配向膜19を200℃で1時間焼成する(S2)。 Hereinafter, a method for manufacturing thedisplay panel 6 according to the present embodiment will be described.
FIG. 12 is a flowchart showing a processing procedure for manufacturing thedisplay panel 6.
Thecontrol device 60, after patterning the TFT 20, the pixel electrode 18 and the like on the insulating substrate 10, forms the alignment film 19 by using the alignment film forming device 61 using polyimide or the like so as to cover the pixel electrode 18 (S1). ).
Thecontrol device 60 uses the firing device 62 to fire the alignment film 19 at 200 ° C. for 1 hour (S2).
図12は、表示パネル6の製造の処理手順を示すフローチャートである。
制御装置60は、絶縁基板10上に、TFT20及び画素電極18等をパターニングした後、配向膜形成装置61により、画素電極18を覆うように例えばポリイミド等を用いて配向膜19を形成する(S1)。
制御装置60は、焼成装置62により、配向膜19を200℃で1時間焼成する(S2)。 Hereinafter, a method for manufacturing the
FIG. 12 is a flowchart showing a processing procedure for manufacturing the
The
The
制御装置60は、焼成した配向膜19に配向処理を施す(S3)。
制御装置60は、配向処理装置63により、直線偏光紫外線を配向膜19上に照射し、偏光方向の高分子鎖を選択的に反応させて異方性を発生させて液晶配向能を付与するか、又は配向膜19の表面をラビングし、配向膜19の表面の高分子鎖を一定方向に潰れさせて配向膜19上に異方性が生じさせ、液晶分子の配向方向を規定する。
そして、制御装置60は、TFT基板1を貼り合わせ装置65へ搬送し、真空下でCF基板2と貼り合わせる(S7)。 Thecontrol device 60 performs an alignment process on the baked alignment film 19 (S3).
Whether thecontrol device 60 irradiates the alignment film 19 with the linearly polarized ultraviolet light by the alignment processing device 63 and selectively reacts the polymer chain in the polarization direction to generate anisotropy to give the liquid crystal alignment ability. Alternatively, the surface of the alignment film 19 is rubbed, and the polymer chain on the surface of the alignment film 19 is crushed in a certain direction to cause anisotropy on the alignment film 19, thereby defining the alignment direction of the liquid crystal molecules.
Then, thecontrol device 60 conveys the TFT substrate 1 to the bonding device 65 and bonds it to the CF substrate 2 under vacuum (S7).
制御装置60は、配向処理装置63により、直線偏光紫外線を配向膜19上に照射し、偏光方向の高分子鎖を選択的に反応させて異方性を発生させて液晶配向能を付与するか、又は配向膜19の表面をラビングし、配向膜19の表面の高分子鎖を一定方向に潰れさせて配向膜19上に異方性が生じさせ、液晶分子の配向方向を規定する。
そして、制御装置60は、TFT基板1を貼り合わせ装置65へ搬送し、真空下でCF基板2と貼り合わせる(S7)。 The
Whether the
Then, the
CF基板2は以下のようにして製造される。
制御装置60は、絶縁基板30上に、カラーフィルタ31、ブラックマトリクス、及び共通電極34等を形成した後、配向膜形成装置61により、例えばポリイミド等を用いて共通電極34上に配向膜34を形成し(S11)、焼成装置62により、200℃で1時間焼成する(S12)。
制御装置60は、焼成した配向膜34に配向処理を施す(S13)。配向処理は、配向膜34に直線偏光紫外線を高分子膜上に照射し、又は配向膜34の表面をラビングすることによって、高分子膜に異方性を生じさせる。 TheCF substrate 2 is manufactured as follows.
Thecontrol device 60 forms the color filter 31, the black matrix, the common electrode 34, and the like on the insulating substrate 30, and then uses the alignment film forming device 61 to form the alignment film 34 on the common electrode 34 using, for example, polyimide. It is formed (S11), and is baked at 200 ° C. for 1 hour by the baking device 62 (S12).
Thecontrol device 60 performs an alignment process on the baked alignment film 34 (S13). In the alignment treatment, the alignment film 34 is irradiated with linearly polarized ultraviolet light on the polymer film, or the surface of the alignment film 34 is rubbed to cause anisotropy in the polymer film.
制御装置60は、絶縁基板30上に、カラーフィルタ31、ブラックマトリクス、及び共通電極34等を形成した後、配向膜形成装置61により、例えばポリイミド等を用いて共通電極34上に配向膜34を形成し(S11)、焼成装置62により、200℃で1時間焼成する(S12)。
制御装置60は、焼成した配向膜34に配向処理を施す(S13)。配向処理は、配向膜34に直線偏光紫外線を高分子膜上に照射し、又は配向膜34の表面をラビングすることによって、高分子膜に異方性を生じさせる。 The
The
The
制御装置60は、シール材塗布装置64により、CF基板3の周縁部の内側に枠状に接着性を有するシール材5を塗布する。例えばディスペンサで塗布する等の方法によってシール材料をパターニングし、焼成によりシール材料を硬化させて、枠状のシール材5を形成する(S14)。
そして、制御装置60は、CF基板3を貼り合わせ装置65へ搬送し、S7へ処理をすすめる。 Thecontrol device 60 applies the sealing material 5 having adhesiveness in a frame shape to the inside of the peripheral edge portion of the CF substrate 3 by the sealing material application device 64. For example, the sealing material is patterned by a method such as application with a dispenser, and the sealing material is cured by baking to form the frame-shaped sealing material 5 (S14).
And thecontrol apparatus 60 conveys the CF board | substrate 3 to the bonding apparatus 65, and advances a process to S7.
そして、制御装置60は、CF基板3を貼り合わせ装置65へ搬送し、S7へ処理をすすめる。 The
And the
制御装置60は、貼り合わせ装置65により貼り合わされたTFT基板1及びCF基板3をシール材硬化装置66へ搬送し、例えば紫外線をシール材5に照射して硬化させる(S8)。
制御装置60は、両基板を液晶材注入装置67へ搬送し、液晶材注入装置67によりシール材5の注入孔から基板間へ液晶材を注入する(S9)。
制御装置60は、封止装置68により、注入孔を封止する(S10)。 Thecontrol device 60 conveys the TFT substrate 1 and the CF substrate 3 bonded together by the bonding device 65 to the sealing material curing device 66, and irradiates the sealing material 5 with, for example, ultraviolet rays to cure (S8).
Thecontrol device 60 conveys both substrates to the liquid crystal material injecting device 67, and injects the liquid crystal material from the injection hole of the sealing material 5 between the substrates by the liquid crystal material injecting device 67 (S9).
Thecontrol device 60 seals the injection hole with the sealing device 68 (S10).
制御装置60は、両基板を液晶材注入装置67へ搬送し、液晶材注入装置67によりシール材5の注入孔から基板間へ液晶材を注入する(S9)。
制御装置60は、封止装置68により、注入孔を封止する(S10)。 The
The
The
本実施の形態においては、焼成装置62から貼り合わせ装置65まで、TFT基板1を搬送するときの搬送ライン、及び貼り合わされたTFT基板1及びCF基板3を貼り合わせ装置65から封止装置68まで搬送するときの各搬送ラインの環境湿度を45.5%以下に制御する。各搬送ラインの両端側の装置の環境湿度も45.5%以下に制御するのが好ましい。環境湿度は45%以下であるのが好ましい。
In the present embodiment, the transfer line for transferring the TFT substrate 1 from the baking device 62 to the bonding device 65, and the bonded TFT substrate 1 and CF substrate 3 from the bonding device 65 to the sealing device 68. The environmental humidity of each transport line when transporting is controlled to 45.5% or less. It is preferable to control the environmental humidity of the devices on both ends of each conveyance line to 45.5% or less. The environmental humidity is preferably 45% or less.
上述の搬送ラインの環境湿度が45.5%以下である場合、該搬送ラインにおいて、TFT基板1が有する層間絶縁膜17が吸湿し、液晶層4内に水分が放出されて気泡が生じ、即ち液晶が配向しない部分となって、表示に不具合が生じることが抑制される。
When the environmental humidity of the transfer line is 45.5% or less, the interlayer insulating film 17 of the TFT substrate 1 absorbs moisture in the transfer line, moisture is released into the liquid crystal layer 4, and bubbles are generated. It becomes a part where the liquid crystal is not aligned, and the occurrence of defects in display is suppressed.
なお、本発明は上述した実施の形態1~4の内容に限定されるものではなく、請求項に示した範囲で種々の変更が可能である。すなわち、請求項に示した範囲で適宜変更した技術的手段を組み合わせて得られる実施形態も本発明の技術的範囲に含まれる。
例えば、液晶表示装置はTV受信機に備えられる場合に限定されるものではない。
また、環境湿度の制御は制御装置60が行う場合に限定されず、作業者が行うことにしてもよい。
そして、TFT基板1の搬送ラインの環境湿度を制御する場合に限定されるものではない。 The present invention is not limited to the contents ofEmbodiments 1 to 4 described above, and various modifications can be made within the scope of the claims. In other words, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.
For example, the liquid crystal display device is not limited to the case where it is provided in a TV receiver.
Further, the control of the environmental humidity is not limited to the case where thecontrol device 60 performs, but may be performed by an operator.
And it is not limited to controlling the environmental humidity of the conveyance line of theTFT substrate 1.
例えば、液晶表示装置はTV受信機に備えられる場合に限定されるものではない。
また、環境湿度の制御は制御装置60が行う場合に限定されず、作業者が行うことにしてもよい。
そして、TFT基板1の搬送ラインの環境湿度を制御する場合に限定されるものではない。 The present invention is not limited to the contents of
For example, the liquid crystal display device is not limited to the case where it is provided in a TV receiver.
Further, the control of the environmental humidity is not limited to the case where the
And it is not limited to controlling the environmental humidity of the conveyance line of the
1 TFT基板
10、30 絶縁基板
11 ゲート配線
12 ソース配線
14、17 層間絶縁膜
15 ゲート絶縁膜
16 パッシベーション膜
18 画素電極
19、34 配向膜
3 CF基板
31 カラーフィルタ
32 トップコート膜
33 共通電極
4 液晶層
5 シール材
6 表示パネル
7 表示モジュール
51、61 配向膜形成装置
52、62 焼成装置
53、63 配向膜処理装置
54、64 シール材塗布装置
55 真空脱気装置
56 液晶材滴下装置
57、65 貼り合わせ装置
58、66 シール材硬化装置
67 液晶材注入装置
68 封止装置
25、28、29、46 製造エリア
26、42、44、47 空気調節機
27、43、45、48 搬送装置
100 テレビジョン受信機
200、300 製造装置 DESCRIPTION OFSYMBOLS 1 TFT substrate 10, 30 Insulating substrate 11 Gate wiring 12 Source wiring 14, 17 Interlayer insulating film 15 Gate insulating film 16 Passivation film 18 Pixel electrode 19, 34 Alignment film 3 CF substrate 31 Color filter 32 Topcoat film 33 Common electrode 4 Liquid crystal Layer 5 Sealing material 6 Display panel 7 Display module 51, 61 Alignment film forming device 52, 62 Baking device 53, 63 Alignment film processing device 54, 64 Sealing material coating device 55 Vacuum degassing device 56 Liquid crystal material dropping device 57, 65 Pasting Matching device 58, 66 Sealing material curing device 67 Liquid crystal material injection device 68 Sealing device 25, 28, 29, 46 Manufacturing area 26, 42, 44, 47 Air conditioner 27, 43, 45, 48 Transport device 100 Television reception 200, 300 Manufacturing equipment
10、30 絶縁基板
11 ゲート配線
12 ソース配線
14、17 層間絶縁膜
15 ゲート絶縁膜
16 パッシベーション膜
18 画素電極
19、34 配向膜
3 CF基板
31 カラーフィルタ
32 トップコート膜
33 共通電極
4 液晶層
5 シール材
6 表示パネル
7 表示モジュール
51、61 配向膜形成装置
52、62 焼成装置
53、63 配向膜処理装置
54、64 シール材塗布装置
55 真空脱気装置
56 液晶材滴下装置
57、65 貼り合わせ装置
58、66 シール材硬化装置
67 液晶材注入装置
68 封止装置
25、28、29、46 製造エリア
26、42、44、47 空気調節機
27、43、45、48 搬送装置
100 テレビジョン受信機
200、300 製造装置 DESCRIPTION OF
Claims (7)
- 少なくとも一方の基板が有機材料を含む有機膜を有する、一対の基板夫々に配向膜を形成し、形成した各配向膜を焼成し、焼成した各配向膜に配向処理を施し、各基板を真空脱気した後、両基板間に液晶材を介在させた状態で前記両基板を貼り合わせる液晶表示装置の製造方法において、
前記一方の基板を真空脱気した後、真空脱気された他方の基板と貼り合わせるために搬送する搬送ラインの環境湿度を45.5%以下に制御することを特徴とする液晶表示装置の製造方法。 At least one substrate has an organic film containing an organic material, an alignment film is formed on each of the pair of substrates, each formed alignment film is baked, each baked alignment film is subjected to alignment treatment, and each substrate is subjected to vacuum desorption. In the manufacturing method of the liquid crystal display device in which the two substrates are bonded together in a state where the liquid crystal material is interposed between the two substrates,
Manufacturing of a liquid crystal display device characterized in that after the one substrate is vacuum degassed, the environmental humidity of the transport line transported to be bonded to the other vacuum degassed substrate is controlled to 45.5% or less. Method. - 前記搬送ラインと、他の処理を行うために前記一方の基板又は前記他方の基板を搬送する第2の搬送ラインとが同一空間内に設けられている場合に、前記搬送ラインを含む空間を前記同一空間から区画し、前記空間の環境湿度を45.5%以下に制御することを特徴とする請求項1に記載の液晶表示装置の製造方法。 When the transport line and the second transport line for transporting the one substrate or the other substrate for performing other processing are provided in the same space, the space including the transport line is 2. The method of manufacturing a liquid crystal display device according to claim 1, wherein the liquid crystal display device is partitioned from the same space, and the environmental humidity of the space is controlled to 45.5% or less.
- 前記一方の基板の配向膜を焼成した後、配向処理を施し、真空脱気するために前記基板を搬送する搬送ラインの環境湿度を45.5%以下に制御することを特徴とする請求項1に記載の液晶表示装置の製造方法。 2. The environmental humidity of a transfer line for transferring the substrate is controlled to 45.5% or less in order to perform alignment treatment after the alignment film of the one substrate is baked and to perform vacuum degassing. A method for producing a liquid crystal display device according to claim 1.
- 少なくとも一方の基板が有機材料を含む有機膜を有する、一対の基板夫々に配向膜を形成し、形成した各配向膜を焼成し、焼成した各配向膜に配向処理を施し、両基板をシール材により貼り合わせ、該シール材に設けた注入孔から液晶材を注入して該注入孔を封止する液晶表示装置の製造方法において、
前記一方の基板の配向膜を焼成した後、配向処理を施し、他方の基板と貼り合わせるために前記基板を搬送する搬送ラインと、両基板を貼り合わせ、前記液晶材を前記注入孔から注入し、該注入孔を封止するために前記両基板を搬送する搬送ラインとの環境湿度を45.5%以下に制御することを特徴とする液晶表示装置の製造方法。 At least one substrate has an organic film containing an organic material, an alignment film is formed on each of a pair of substrates, each formed alignment film is baked, each alignment film is subjected to alignment treatment, and both substrates are sealed. In a manufacturing method of a liquid crystal display device in which a liquid crystal material is injected from an injection hole provided in the sealing material and the injection hole is sealed,
After the alignment film of the one substrate is baked, an alignment process is performed, and a transfer line for transferring the substrate to be bonded to the other substrate is bonded to the two substrates, and the liquid crystal material is injected from the injection hole. A method for manufacturing a liquid crystal display device, characterized in that an environmental humidity with a transfer line for transferring both the substrates is controlled to 45.5% or less in order to seal the injection hole. - 前記搬送ラインに対応して配される装置の環境湿度も45.5%以下に制御することを特徴とする請求項1から4までのいずれか1項に記載の液晶表示装置の製造方法。 The method for manufacturing a liquid crystal display device according to any one of claims 1 to 4, wherein the environmental humidity of the device arranged corresponding to the transfer line is also controlled to 45.5% or less.
- 前記環境湿度は45%以下であることを特徴とする請求項1から5までのいずれか1項に記載の液晶表示装置の製造方法。 The method for manufacturing a liquid crystal display device according to any one of claims 1 to 5, wherein the environmental humidity is 45% or less.
- 前記環境湿度は35%以上であることを特徴とする請求項1から6までのいずれか1項に記載の液晶表示装置の製造方法。 The method for manufacturing a liquid crystal display device according to any one of claims 1 to 6, wherein the environmental humidity is 35% or more.
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