JP2010224094A - Method of manufacturing electrooptical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an electrooptical device, for improving display quality and reliability. <P>SOLUTION: The method of manufacturing the electrooptical device includes: a coating process of coating a UV-curable sealing material 14 on a counter substrate 13 as at least one of a pair of substrates; a first ultraviolet irradiation process of irradiating the sealing material 14 directly with ultraviolet rays 41; a bonding process of bonding the counter substrate 13 and the other substrate; and a second ultraviolet irradiation process of irradiating the sealing material 14 held between the pair of substrates with the ultraviolet rays 41 again. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

The present invention relates to a method for manufacturing an electro-optical device in which a sealing material is cured and a pair of substrates are bonded together.

As one of the electro-optical devices, as shown in FIGS. 10A and 10B, a sealing material 111 is used.
There is a liquid crystal device 101 having a structure in which a liquid crystal 114 is sandwiched between an element substrate 112 and a counter substrate 113 through a substrate. The sealing material 111 is, for example, an ultraviolet curable adhesive material.

In the manufacturing method of the liquid crystal device 101, first, the sealing material 111 is applied to the element substrate 112 (or the counter substrate 113). Next, the element substrate 112 and the counter substrate 113 are bonded to each other with the sealant 111 interposed therebetween. Thereafter, for example, as described in Patent Document 1 and Patent Document 2, the sealing material 1
11 is irradiated with ultraviolet rays 117 to cure the sealing material 111. Next, the liquid crystal 114 is injected into the inside surrounded by the sealant 111 from the liquid crystal injection hole 115 formed in a part of the sealant 111, and the liquid crystal inlet 115 is sealed with the sealant 116. Thus, the liquid crystal device 101 is completed.

Japanese Patent Laid-Open No. 9-15612 JP 7-287241 A

However, the ultraviolet rays 117 are absorbed by the electrodes or the alignment film provided on the counter substrate 113 (or the element substrate 112), and the amount of ultraviolet rays necessary to cure (react) the sealing material 101 may not be obtained. . Therefore, the pair of substrates 112 and 113 are not securely bonded to each other. For example, impurities are diffused and contaminated from the uncured sealing material 111 to the liquid crystal 114, and as a result, display quality and reliability may be deteriorated. It was.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

Application Example 1 An electro-optical device manufacturing method according to this application example includes an application step of applying an ultraviolet curable sealing material to at least one of a pair of substrates, and directly irradiating the sealing material with ultraviolet rays. A first ultraviolet irradiation step, a laminating step of bonding the one substrate and the other substrate, and a second ultraviolet irradiation step of irradiating the sealing material sandwiched between the pair of substrates with ultraviolet rays again. It is characterized by that.

According to this method, since the sealing material is directly irradiated with ultraviolet rays in the first ultraviolet irradiation process, the ultraviolet rays necessary for the sealing material to cure are applied to the substrate as compared with the case where the sealing material is irradiated with ultraviolet rays through the substrate. It is possible to prevent absorption (reduce the loss of ultraviolet rays). Therefore, the curing of the sealing material can be surely promoted (progressed). Furthermore, it becomes possible to cure | harden the sealing material which hardening started reliably by the 2nd ultraviolet irradiation process. As a result, the pair of substrates can be securely bonded.

Application Example 2 In the electro-optical device manufacturing method according to the application example, it is preferable that the sealing material includes a photoreaction retarder.

According to this method, since the sealing material contains the photoreaction retarder, it is possible to delay the time from when the sealing material is irradiated with ultraviolet rays until the sealing material is cured, compared to when the sealing material is not included. . Therefore, even if the sealing material is directly irradiated with ultraviolet rays, the sealing material can be prevented from being cured immediately and can be cured reliably. In addition, after irradiating with ultraviolet rays, a time for bonding the pair of substrates or adjusting the positions of the substrates can be provided.

Application Example 3 In the method of manufacturing an electro-optical device according to the application example, it is preferable that the temperature of at least one of the substrates coated with the sealing material is lower than room temperature in the first ultraviolet irradiation step. .

According to this method, since at least one of the substrates is cooled to a temperature lower than room temperature and the sealing material is irradiated with ultraviolet rays, it is possible to slow down the progress speed at which the sealing material is cured. Accordingly, the substrates can be bonded or the substrates can be aligned before the sealing material is cured.

Application Example 4 In the method of manufacturing an electro-optical device according to the application example, it is preferable that the temperature of at least one of the substrates is higher than that of the first ultraviolet irradiation step in the second ultraviolet irradiation step.

According to this method, since at least one of the substrates is heated to irradiate the sealing material with ultraviolet rays, the progress speed at which the sealing material is cured can be increased. Therefore, it becomes possible to cure | harden reliably the sealing material which hardening started, As a result, a pair of board | substrate can be bonded together.

Application Example 5 In the method of manufacturing an electro-optical device according to the application example, it is preferable that the second ultraviolet irradiation step irradiates the sealing material with the ultraviolet light from both sides of the one substrate and the other substrate. .

According to this method, since the ultraviolet rays are irradiated from both sides of the pair of substrates, the sealing material can be cured quickly and reliably compared to the case where the ultraviolet rays are irradiated from one side.

Application Example 6 In the electro-optical device manufacturing method according to this application example, an application step of applying an ultraviolet curable sealing material to at least one of a pair of substrates, and directly irradiating the sealing material with ultraviolet rays. It has an ultraviolet irradiation process, a bonding process for bonding the one substrate and the other substrate, and a heating process for heating the pair of substrates.

According to this method, since the ultraviolet ray is directly irradiated to the sealing material by the ultraviolet ray irradiating step, the ultraviolet ray necessary for the sealing material to be cured is absorbed by the substrate as compared with the case where the ultraviolet ray is irradiated to the sealing material through the substrate. It is possible to prevent (reduce the loss of ultraviolet rays).
Therefore, the curing of the sealing material can be surely promoted (progressed). Furthermore, it becomes possible to harden the sealing material which hardened | cured reliably by the heating process. As a result, the pair of substrates can be securely bonded. In other words, the sealing material can be cured by a single ultraviolet irradiation.

Application Example 7 In the method of manufacturing the electro-optical device according to the application example, it is preferable that the sealing material includes a photoreaction retarder.

According to this method, since the sealing material contains the photoreaction retarder, it is possible to delay the time from when the sealing material is irradiated with ultraviolet rays until the sealing material is cured, compared to when the sealing material is not included. . Therefore, even if the sealing material is directly irradiated with ultraviolet rays, the sealing material can be prevented from being cured immediately and can be cured reliably. In addition, after irradiating with ultraviolet rays, a time for bonding the pair of substrates or adjusting the positions of the substrates can be provided.

Application Example 8 In the method of manufacturing an electro-optical device according to the application example, it is preferable that in the ultraviolet irradiation step, the temperature of at least one of the substrates coated with the sealing material is lower than room temperature.

According to this method, since at least one of the substrates is cooled to a temperature lower than room temperature and the sealing material is irradiated with ultraviolet rays, it is possible to slow down the progress speed at which the sealing material is cured. Accordingly, the substrates can be bonded or the substrates can be aligned before the sealing material is cured.

Application Example 9 In the electro-optical device manufacturing method according to the application example described above, it is preferable that at least a part of the sealing material is formed so as to overlap with a light shielding film provided in a peripheral portion of the display region. .

According to this method, since the sealing material is directly irradiated with ultraviolet rays in the first ultraviolet irradiation step (ultraviolet irradiation step), the curing of the sealing material proceeds even when the sealing material is formed so as to overlap the light shielding film in a plane. As a result, the sealing material can be cured. In addition, since the sealing material and the light shielding film overlap in a planar manner, it is possible to make the frame narrower and increase the number of units taken per unit area.

FIG. 2 is a schematic plan view illustrating a structure of a liquid crystal device. FIG. 2 is a schematic cross-sectional view taken along line AA ′ of the liquid crystal device illustrated in FIG. 1. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. Process drawing which shows the manufacturing method of a liquid crystal device in order of a process. 4A and 4B are schematic views illustrating a method for bonding a pair of substrates in a liquid crystal device in the order of steps, where FIG. 5A is a schematic plan view, and FIG. 5B is a schematic cross-sectional view taken along the line BB ′ of the liquid crystal device illustrated in FIG. 4A and 4B are schematic views showing a method for bonding a pair of substrates in a liquid crystal device in the order of steps, where FIG. 5A is a schematic plan view, and FIG. 5B is a schematic cross-sectional view taken along the line CC ′ of the liquid crystal device shown in FIG. 4A and 4B are schematic views showing a method for bonding a pair of substrates in a liquid crystal device in the order of steps, where FIG. 5A is a schematic plan view, and FIG. 5B is a schematic cross-sectional view taken along the line DD ′ of the liquid crystal device shown in FIG. 2A and 2B are schematic views illustrating a method for bonding a pair of substrates in a liquid crystal device in the order of steps, in which FIG. 2A is a schematic plan view, and FIG. 2B is a schematic cross-sectional view taken along line EE ′ of the liquid crystal device illustrated in FIG. It is a schematic diagram which shows the modification of the structure of a liquid crystal device, (a) is a schematic plan view and an enlarged view, (b) is a schematic side view. It is a schematic diagram which shows the structure of the conventional liquid crystal device, (a) is a schematic plan view, (b) is a schematic cross section along the FF 'line | wire of the liquid crystal device shown to (a).

<Configuration of liquid crystal device>
FIG. 1 is a schematic plan view showing a structure of a liquid crystal device as an electro-optical device. 2 is shown in FIG.
It is a schematic cross section which follows the AA 'line | wire of the liquid crystal device shown in FIG. Hereinafter, the structure of the liquid crystal device will be described with reference to FIGS.

As shown in FIGS. 1 and 2, the liquid crystal device 11 includes, for example, a thin film transistor (hereinafter, “
This is referred to as a TFT (Thin Film Transistor) element. ) Is a TFT active matrix type liquid crystal device using pixel switching elements. In the liquid crystal device 11, an element substrate 12 and a counter substrate 13 constituting a pair of substrates are bonded together via a sealing material 14 having a substantially rectangular frame shape in plan view.

The element substrate 12 and the counter substrate 13 are made of a translucent material such as glass or quartz, for example.
The element substrate 12 and the counter substrate 13 are transparent, but absorb ultraviolet rays to some extent.

The sealing material 14 is, for example, a cationic polymerization type ultraviolet curable resin. Further, the sealing material 14 contains a photoreaction retarder. This makes it possible to delay the time from when the sealing material 14 is irradiated with ultraviolet rays until the curing reaction is started until it completely cures.
Further, the curing reaction rate of the sealing material 14 depends on the temperature. That is, the polymerization rate increases as the temperature increases.

Further, the liquid crystal device 11 has a configuration in which a liquid crystal layer 15 is enclosed in a region surrounded by a sealing material 14. In order to inject and seal the liquid crystal layer 15, the liquid crystal injection port 16 and the sealing material 1 are used.
7 is provided.

As the liquid crystal layer 15, for example, a liquid crystal material having a positive dielectric anisotropy is used. In the liquid crystal device 11, a frame light-shielding film 18 a having a rectangular frame shape made of a light-shielding material is formed on the counter substrate 13 along the vicinity of the inner periphery of the sealing material 14, and an area inside the frame light-shielding film 18 a is formed. It is a display area 19.

The frame light shielding film 18a is made of, for example, aluminum (Al), which is a light shielding material, and is provided so as to partition the outer periphery of the display region 19 on the counter substrate 13 side.

In the display area 19, pixel areas 21 are provided in a matrix. The pixel area 21 constitutes one pixel that is the minimum display unit of the display area 19. In the region outside the sealing material 14, the signal line driving circuit 22 and the external connection terminal 23 are formed along one side (the lower side in FIG. 1) of the element substrate 12.

Further, scanning line driving circuits 24 are formed in the inner region of the sealing material 14 along two sides adjacent to the one side. On the remaining side of the element substrate 12 (upper side in FIG. 1),
An inspection circuit 25 is formed. The frame light-shielding film 18a formed on the counter substrate 13 side is, for example, a position facing the scanning line driving circuit 24 and the inspection circuit 25 formed on the element substrate 12 (
In other words, it is formed at a position overlapping in plan).

The frame light shielding film 18a is formed with a region width so that light from the light source leaks and does not enter the display region 19 when displaying. Also, for example, a lower light shielding film 18b is partially formed on the element substrate 12 below the frame light shielding film 18a.

On the other hand, vertical conduction terminals 26 for providing electrical conduction between the element substrate 12 and the counter substrate 13 are disposed at each corner of the counter substrate 13 (for example, four corners of the sealing material 14). Has been.

As shown in FIG. 2, a plurality of pixel electrodes 27 are formed on the element substrate 12 on the liquid crystal layer 15 side, and a first alignment film 28 is formed so as to cover the pixel electrodes 27. The pixel electrode 27 is a conductive film made of a transparent conductive material such as ITO (Indium Tin Oxide).

On the other hand, a lattice-shaped light shielding film (BM: black matrix) (not shown) is formed on the liquid crystal layer 15 side of the counter substrate 13, and a flat solid common electrode 31 is formed thereon. A second alignment film 32 is formed on the common electrode 31. The common electrode 31 is a conductive film made of a transparent conductive material such as ITO.

The liquid crystal device 11 is transmissive and is used with polarizing plates and the like arranged on the light incident side and the light emitting side of the element substrate 12 and the counter substrate 13 (a pair of substrates), respectively. The configuration of the liquid crystal device 11 as the electro-optical device is not limited to this, and may be a reflective type or a transflective type.

FIG. 3 is an equivalent circuit diagram showing an electrical configuration of the liquid crystal device. Hereinafter, the electrical configuration of the liquid crystal device will be described with reference to FIG.

As shown in FIG. 3, the liquid crystal device 11 has a plurality of pixel regions 21 that constitute a display region 19. A pixel electrode 27 is disposed in each pixel region 21. A TFT element 33 is formed in the pixel region 21.

The TFT element 33 is a switching element that controls energization of the pixel electrode 27. A signal line 34 is electrically connected to the source side of the TFT element 33. Image signals S1, S2,..., Sn are supplied to each signal line 34 from, for example, the signal line drive circuit 22 (see FIG. 1).

A scanning line 35 is electrically connected to the gate side of the TFT element 33. For example, scanning signals G1, G2,..., Gm are supplied to each scanning line 35 in a pulsed manner at a predetermined timing from the scanning line driving circuit 24 (see FIG. 1). The TFT element 33
The pixel electrode 27 is electrically connected to the drain side.

.., Gm supplied from the scanning line 35 causes the TFT element 33 serving as a switching element to be in an ON state for a certain period, so that the image signals S1, S2,. , Sn are written to the pixel region 21 via the pixel electrode 27 at a predetermined timing.

Image signals S1, S2,..., Sn written in the pixel area 21 are held for a certain period by a liquid crystal capacitor formed between the pixel electrode 27 and the common electrode 31 (see FIG. 2). In order to prevent leakage of the held image signals S1, S2,..., Sn, a storage capacitor 37 is formed between the pixel electrode 27 and the capacitor line.

Thus, when a voltage signal is applied to the liquid crystal layer 15, the alignment state of the liquid crystal molecules changes according to the applied voltage level. Thereby, the light incident on the liquid crystal layer 15 is modulated to generate image light.

<Method of manufacturing electro-optical device>
FIG. 4 is a process diagram illustrating a manufacturing method of the liquid crystal device in the order of processes. 5 to 8 are a schematic plan view and a schematic cross-sectional view showing a method for bonding a pair of substrates in the manufacturing method of the liquid crystal device in the order of steps. Hereinafter, a method for manufacturing the liquid crystal device will be described with reference to FIGS. Note that FIG.
8 omits illustration and description of pixel electrodes, common electrodes, alignment films (first alignment film and second alignment film) formed on the element substrate and the counter substrate.

First, a manufacturing method on the element substrate 12 side will be described. In step S11, the TFT element 33 (see FIG. 3) is formed on the element substrate 12 made of a translucent material such as glass or quartz. Specifically, it is formed on the element substrate 12 using a well-known film formation technique, photolithography technique, and etching technique.

In step S12, the pixel electrode 27 is formed. Specifically, the pixel electrode 27 is formed on the element substrate 12 (TFT element 33) by using a well-known film forming technique, photolithography technique, and etching technique.

In step S <b> 13, the first alignment film 28 is formed on the pixel electrode 27. The first alignment film 28 is formed by, for example, applying an organic solution containing polyimide or polyamic acid as an alignment film material, and performing drying and baking to remove the solvent component. Examples of the coating method include spin coating and slit coating, and printing methods such as offset. After that, the first film formed
The alignment film 28 is rubbed. Thus, the element substrate 12 side is completed.

Next, a manufacturing method on the counter substrate 13 side will be described. First, in step S21, the common electrode 31 is formed on the counter substrate 13 made of a translucent material such as glass or quartz. Specifically, first, the frame light shielding film 18 a and the like are formed on the counter substrate 13. Next, a color filter (not shown) for enabling color display is formed in the transmission region of each pixel. Next, the common electrode 31 is formed on the counter substrate 13 including the color filter.

In step S <b> 22, the second alignment film 32 is formed on the common electrode 31. The method for forming the second alignment film 32 is the same as the method for forming the first alignment film 28 described above. Thus, the counter substrate 13 side is completed. Subsequently, a method of bonding the element substrate 12 and the counter substrate 13 will be described.

In step S31 (application process), as shown in FIG.
Apply. Specifically, by changing the relative positional relationship between the counter substrate 13 and the dispenser (which may be a discharge device), the peripheral area of the display area 19 on the counter substrate 13 (display area 19) is changed.
The sealing material 14 is applied so as to surround the outer periphery.

The height of the sealing material 14 at this time is, for example, 25 μm. Moreover, the width | variety of the sealing material 14 is 100 micrometers-300 micrometers, for example. As described above, a polymerization retarder or the like is added to the sealing material 14, and the speed of the polymerization reaction of the sealing material 14 is adjusted.

In step S32 (first ultraviolet irradiation process, ultraviolet irradiation process), as shown in FIG. 6, the sealing material 14 is irradiated with the first ultraviolet (UV) 41 for the first time. Specifically, the sealing material 14 is directly irradiated with ultraviolet rays 41 from the side of the counter substrate 13 on which the sealing material 14 is applied. As a light source of the ultraviolet ray 41, a high-pressure mercury lamp can be mentioned. The wavelength necessary for the reaction of the photoreaction initiator contained in the sealing material 14 is about 313 nm. The irradiation intensity is, for example, 150 mW / cm ² . The irradiation time is, for example, 30 seconds. The irradiation amount is, for example, 4000 mJ.

The temperature of the counter substrate 13 (or the surrounding environment) at this time is approximately 1 as a low temperature.
It is 0 degreeC-20 degreeC (room temperature grade). The pressure is preferably normal pressure. The first ultraviolet ray 41
The irradiation may be performed from the surface side where the sealing material 14 is not applied toward the sealing material 14. However, it is desirable to irradiate from the side not affected by light absorption by the counter substrate 13, the transparent electrode, and the second alignment film 32.

In this way, by directly irradiating the sealing material 14 with the ultraviolet ray 41, the sealing material 14 can be cured, and as a result, the sealing material 14 can be reliably cured. Further, by directly irradiating the sealing material 14 with the ultraviolet ray 41, even when the frame light shielding film 18a is formed in the region overlapping the sealing material 14, the ultraviolet ray 41 (ultraviolet ray amount) is affected by the counter substrate 13 and the electrode. The sealing material 14 can be irradiated with ultraviolet rays 41 (necessary amount of ultraviolet rays) having a necessary wavelength without any problem. Therefore, a narrow frame of the liquid crystal device 11 can be realized.

Further, since the ultraviolet light 41 is irradiated from the surface of the counter substrate 13 on which the sealing material 14 is applied, the second alignment film 32 formed on the counter substrate 13 may be adversely affected. Therefore, it is desirable to cover the area other than the area where the sealing material 14 is applied, that is, the area of the second alignment film 32 with a mask. Thereby, it is possible to suppress the deterioration of the second alignment film 32, and the display quality and reliability of the liquid crystal device 11 can be improved.

In step S33 (bonding step), as shown in FIG.
And paste together. Specifically, the element substrate 12 and the counter substrate 13 are bonded together via the sealing material 14 applied to the counter substrate 13. More specifically, it is performed while ensuring the positional accuracy in the vertical and horizontal directions of the substrates 12 and 13.

In step S34 (second ultraviolet irradiation step), as shown in FIG. 8, the sealing material 14 is irradiated with the second ultraviolet ray 41 and the pair of substrates 12 and 13 are pressure-bonded. Specifically, the ultraviolet rays 41 are irradiated from both sides of the element substrate 12 and the counter substrate 13 toward the sealing material 14. More specifically, for example, after the ultraviolet ray 41 is first irradiated from the counter substrate 13 side, a pair of substrates (
12 and 13) are reversed and this time, the ultraviolet rays 41 are irradiated from the element substrate 12 side.

The temperature of the substrate (12, 13) (or the surrounding environment) at this time is approximately 2 as a high temperature.
It is 0 degreeC-80 degreeC. The pair of substrates 12 and 13 are placed on a hot plate, for example. The irradiation intensity is, for example, 150 mW / cm ² . The irradiation time is, for example, 20 seconds. The pressure is preferably normal pressure. And while irradiating the ultraviolet-ray 41 of the 2nd time, ensuring a cell gap, a pair of board | substrates 12 and 13 are crimped | bonded (pressed). Thereby, the sealing material 14 which has been cured can be reliably cured, and the pair of substrates 12 and 13 are bonded together.

The height of the sealing material 14 after pressure bonding, that is, the cell gap is 2 μm to 3 μm. The width of the sealing material 14 is, for example, 500 μm to 1000 μm. In this state, an empty structure in which no liquid crystal is sealed is formed.

In step S35, liquid crystal is injected into the structure from the liquid crystal injection port 16 (see FIG. 1).
Thereafter, the liquid crystal injection port 16 is sealed. For sealing, for example, a sealing material 17 such as a resin is used. Thus, the liquid crystal device 11 is completed.

  As described above in detail, according to the present embodiment, the following effects can be obtained.

(1) According to this embodiment, since the ultraviolet ray 41 is directly irradiated to the sealing material 14 containing the photoreaction retarder in the first ultraviolet ray 41 irradiation step (first ultraviolet ray irradiation step), the counter substrate 13 (or Compared to the case where the sealing material 14 is irradiated with the ultraviolet ray 41 through the element substrate 12), the counter substrate 13 is prevented from absorbing the ultraviolet ray 41 (ultraviolet ray amount) necessary for the sealing material 14 to be cured (ultraviolet ray 41). Can be reduced). Thereby, hardening of the sealing material 14 can be accelerated | stimulated reliably (progress). Furthermore, since the second ultraviolet ray 41 is irradiated to the sealing material 14 that has been cured by the photoreaction retarder (second ultraviolet irradiation step), the sealing material 14 can be reliably cured. As a result, the element substrate 12 and the counter substrate 13 can be bonded together reliably. In addition, since the element substrate 12 and the counter substrate 13 can be reliably bonded to each other by such a sealing material 14, display quality and reliability can be improved.

(2) According to this embodiment, since the sealing material 14 includes a photoreaction retarder, it is possible to delay the time from when the sealing material 14 starts to be cured until it is completely cured. Therefore, after the first ultraviolet ray 41 is irradiated, the element substrate 12 and the counter substrate 13 can be bonded together, or the positions of the element substrate 12 and the counter substrate 13 can be adjusted.

(3) According to the present embodiment, since the ultraviolet ray 41 is directly applied to the sealing material 14, even when the sealing material 14 is formed so as to overlap the frame light shielding film 18 a in a plane, the first ultraviolet ray 41 is used.
It becomes possible to advance hardening of the sealing material 14 by irradiation (1st ultraviolet irradiation process) of this, As a result, the sealing material 14 can be hardened. Accordingly, the position of the sealing material 14 can be brought closer to the display area 19 side, and the number of pieces taken per unit area can be increased (realization of a narrow frame).

  In addition, embodiment is not limited above, It can also implement with the following forms.

(Modification 1)
As described above, in order to cure the sealing material 14, the irradiation of the ultraviolet ray 41 is performed twice, and the sealing material 14 is cured by one irradiation of the ultraviolet ray 41. Good. Specifically, first, as shown in FIG. 6 described above, the sealing material 1 is applied by directly irradiating the sealing material 14 applied on the counter substrate 13 with ultraviolet rays 41 at a low temperature (about 10 ° C. to 20 ° C.).
Curing of 4 is started (progressed). Thereafter, the element substrate 12 and the counter substrate 13 are assembled in a place where the ultraviolet rays 41 are not irradiated, and further alignment is performed. Next, by performing pressure bonding at a high temperature (heated to about 20 ° C. to 80 ° C.), the curing of the sealing material 14 is accelerated, and the sealing material 14 is subsequently cured (heating process). As a result, the sealing material 14 is completely cured. in this way,
The ultraviolet ray 41 is irradiated as much as the curing proceeds first, and the element substrate 12 and the counter substrate 13 are bonded to each other while the curing of the sealing material 14 is gradually proceeding, and then heated to seal the sealing material 14.
It is possible to carry out with only one ultraviolet ray 41 irradiation by completely curing.

(Modification 2)
As described above, the bonding of the element substrate 12 and the counter substrate 13 is not limited to one chip at a time. For example, as shown in FIG.
And a method of bonding the second mother substrate 53 to each other. (A) is the schematic plan view which looked at the wafer 51 from upper direction. Further, FIG. 3 is an enlarged plan view showing one liquid crystal device 51a constituting the wafer 51 in an enlarged manner. (B) is the model side view which looked at the wafer 51 from the side.

As shown in the enlarged view of (a), the liquid crystal device 51 a includes an element substrate 52 via a sealing material 54.
a and the counter substrate 53a are bonded together. The sealing material 54 is provided on the entire periphery of the element substrate 52a and the counter substrate 53a. That is, no injection port for injecting liquid crystal is provided.

As a manufacturing method of the liquid crystal device 51a in this case, first, for example, the sealing material 54 is applied in a frame shape for each liquid crystal device 51a on the first mother substrate 52. Next, the ultraviolet ray 41 is directly applied to the sealing material 54. Thereby, hardening of the sealing material 54 advances. Thereafter, an appropriate amount of liquid crystal is dropped onto a region surrounded by the sealing material 54. Then, the second mother substrate 5 is aligned while being aligned.
3 is bonded to the first mother substrate 52. Next, the ultraviolet light 41 is irradiated from both sides of the first mother substrate 52 and the second mother substrate 53, and the pair of mother substrates 52, 53 are pressure-bonded.

In this way, the first mother substrate 52 and the second mother substrate 53 are bonded together through the sealing material 54, and the wafer 51 in which the liquid crystal is arranged between the first mother substrate 52 and the second mother substrate 53 is completed. To do. Note that the sealing material 54 may be applied to the second mother substrate 53 and bonded to the first mother substrate 52.

(Modification 3)
As described above, instead of applying the sealing material 14 to the counter substrate 13 and irradiating the sealing material 14 with the first ultraviolet ray 41 to start the curing of the sealing material 14, the sealing material 14 is applied to the counter substrate 13. You may make it start hardening of the sealing material 14 by irradiating the ultraviolet-ray 41 of the 1st time, apply | coating. Also in this case, the sealing material 14 contains a photoreaction retarder. According to this, it becomes possible to carry out the process of applying the sealing material 14 and the process of irradiating the ultraviolet ray 41 at the same time without making them separate, and the manufacturing time can be shortened.

(Modification 4)
The above-described embodiment is not limited to being applied to the liquid crystal device 11 as an electro-optical device,
For example, you may make it apply to an organic EL apparatus, a plasma display, etc.

DESCRIPTION OF SYMBOLS 11, 51a ... Liquid crystal device as an electro-optical device, 12, 52a ... Element board | substrate which comprises a pair of board | substrate, 13, 53a ... Opposite board | substrate which comprises a pair of board | substrate, 14, 54 ... Sealing material, 15 ...
Liquid crystal layer, 16 ... Liquid crystal injection port, 17 ... Sealing material, 18a ... Frame light shielding film, 18b ... Lower light shielding film,
DESCRIPTION OF SYMBOLS 19 ... Display area, 21 ... Pixel area, 22 ... Signal line drive circuit, 23 ... External connection terminal, 24 ...
Scanning line drive circuit, 25 ... inspection circuit, 26 ... vertical conduction terminal, 27 ... pixel electrode, 28 ... first alignment film, 31 ... common electrode, 32 ... second alignment film, 33 ... TFT element, 34 ... signal line, 35 ... scanning line, 36 ... capacitance line, 37 ... storage capacitor, 41 ... ultraviolet ray, 51 ... wafer, 52 ... first mother substrate, 53 ... second mother substrate.

Claims (9)

An application step of applying an ultraviolet curable sealant to at least one of the pair of substrates;
A first ultraviolet irradiation step of directly irradiating the sealing material with ultraviolet rays;
A laminating step of laminating the one substrate and the other substrate;
A second ultraviolet irradiation step of irradiating the sealing material sandwiched between the pair of substrates with ultraviolet rays again;
A method for manufacturing an electro-optical device. A method of manufacturing the electro-optical device according to claim 1,
The method for manufacturing an electro-optical device, wherein the sealing material includes a photoreaction retarder. A method of manufacturing the electro-optical device according to claim 1 or 2,
In the first ultraviolet irradiation step, the temperature of at least one of the substrates coated with the sealing material is made lower than room temperature. A method for manufacturing an electro-optical device according to any one of claims 1 to 3,
The method of manufacturing an electro-optical device, wherein in the second ultraviolet irradiation step, the temperature of at least the one substrate is set higher than that in the first ultraviolet irradiation step. A method for manufacturing an electro-optical device according to any one of claims 1 to 4,
The method of manufacturing an electro-optical device, wherein the second ultraviolet irradiation step irradiates the ultraviolet rays onto the sealing material from both sides of the one substrate and the other substrate. An application step of applying an ultraviolet curable sealant to at least one of the pair of substrates;
An ultraviolet irradiation step of directly irradiating the sealing material with ultraviolet rays;
A laminating step of laminating the one substrate and the other substrate;
A heating step of heating the pair of substrates;
A method for manufacturing an electro-optical device. The method of manufacturing an electro-optical device according to claim 6,
The method for manufacturing an electro-optical device, wherein the sealing material includes a photoreaction retarder. A method of manufacturing the electro-optical device according to claim 6 or 7,
The method of manufacturing an electro-optical device, wherein in the ultraviolet irradiation step, the temperature of at least one of the substrates on which the sealing material is applied is lower than room temperature. A method for manufacturing an electro-optical device according to any one of claims 1 to 8,
An electro-optical device manufacturing method, wherein at least a part of the sealing material is formed so as to overlap with a light shielding film provided in a peripheral portion of a display region.

Images