WO2013168339A1 - 圧電デバイス - Google Patents
圧電デバイス Download PDFInfo
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- WO2013168339A1 WO2013168339A1 PCT/JP2013/001744 JP2013001744W WO2013168339A1 WO 2013168339 A1 WO2013168339 A1 WO 2013168339A1 JP 2013001744 W JP2013001744 W JP 2013001744W WO 2013168339 A1 WO2013168339 A1 WO 2013168339A1
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- Prior art keywords
- auxiliary support
- distance
- stress
- auxiliary
- crystal piece
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- 239000013078 crystal Substances 0.000 claims abstract description 183
- 239000000853 adhesive Substances 0.000 claims description 116
- 230000001070 adhesive effect Effects 0.000 claims description 115
- 230000002093 peripheral effect Effects 0.000 claims description 77
- 239000010453 quartz Substances 0.000 claims description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 68
- 235000014676 Phragmites communis Nutrition 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 16
- 230000005284 excitation Effects 0.000 claims description 13
- 230000010355 oscillation Effects 0.000 abstract description 5
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
- B06B1/0648—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element of rectangular shape
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
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- H—ELECTRICITY
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
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- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0509—Holders; Supports for bulk acoustic wave devices consisting of adhesive elements
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0519—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for cantilever
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0523—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- H03H9/02—Details
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- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
Definitions
- the present invention relates to a piezoelectric vibrator such as a quartz vibrator and a piezoelectric device such as a piezoelectric oscillator.
- Piezoelectric vibrators and piezoelectric oscillators such as quartz vibrators serving as reference of frequency and time are widely used in communication devices such as mobile phones and car phones, and electronic devices such as information devices such as computers and IC cards.
- a quartz oscillator is mounted on a sensor module of a tire pressure monitoring system (TPMS: Tire Pressure Monitoring Systems).
- the sensor module has a tire sensor for detecting air pressure and an oscillation unit using a quartz oscillator, and is installed on a tire of an automobile and transmits detection output of the tire sensor to a driver's seat or the like wirelessly.
- the sensor module is installed on, for example, the inner circumferential surface or the wheel of the tire, and rotates at high speed with the tire while the vehicle is traveling.
- the oscillation unit using a quartz oscillator receives the centrifugal acceleration by rotation, and receives the vibration from the road surface, for this application, there is a requirement for the standard at centrifugal acceleration such as 2000 G, which is high. Impact resistance is required.
- Patent Document 1 In order to improve impact resistance, for example, as shown in Patent Document 1, in the conventional crystal unit, a protrusion is formed on the bottom of a package for storing a crystal piece, and the crystal piece is fixed to the protrusion. There is one that is made to carry.
- the present invention has been made in view of the above-described points, and an object of the present invention is to provide a piezoelectric device having excellent impact resistance.
- the inventors of the present invention conducted intensive studies to achieve the above object, and as a result, the pair of electrodes on the opposite side of one side of the piezoelectric vibrating reed having a rectangular outer shape in plan view and the two electrode pads of the base member At least one location on the other side of the other side of the piezoelectric vibrating reed, which is different from the first and second supporting portions for electrically connecting the piezoelectric vibrating reed to the base member, is bonded to the base member, By focusing on the auxiliary support that supports the piezoelectric vibrating reed on the base member, and arranging this auxiliary support in a specific area, even if high centrifugal acceleration is applied, each support and the piezoelectric The inventors have found that the stress applied to the vibrating reed can be reduced to improve the impact resistance, and the present invention has been completed.
- the piezoelectric device of the present invention is The two excitation electrodes are separately provided on one of the opposing sides of the first set of opposing sides out of the two sets of opposing sides forming the rectangular outer shape having a rectangular outer shape in plan view and the front and back principal surfaces.
- a piezoelectric vibrating reed having a pair of electrodes for drawing out;
- a base member having two electrode pads individually connected to the pair of electrodes on the top surface;
- the first and the second are made of a conductive bonding material for electrically bonding the pair of electrodes to the two electrode pads, respectively, and supporting one of the opposite sides of the first pair of opposite sides of the back surface of the piezoelectric vibrating reed 2 support parts
- a piezoelectric device comprising
- the piezoelectric vibrating reed is made of a bonding material in which at least one place on the other facing side of the other side of the first set on the back side of the piezoelectric vibrating reed is bonded to the upper surface of the base member in a predetermined bonding region.
- An auxiliary support portion is provided to support the other opposite side of the first set of opposite sides on the back side,
- the position of the auxiliary support portion from the other opposing side of the first set is L, and the distance between the opposing sides of the first set is the farthest position from the other opposing side of the first set
- a distance from the other opposite side of the first set of the auxiliary support to a recent peripheral edge is H2
- a distance from the other opposite side of the first set of the auxiliary support to the latest peripheral edge and the farthest end The distance in the direction of the distance L between them is D, and the value of (H 2 + D) / L is set to a position that satisfies 20% or less in percentage.
- auxiliary support portions In addition, in the case where there are a plurality of auxiliary support portions, the case where one or both of the auxiliary support portions are at the farthest position from the other opposite side of the first set is included.
- the value of (H2 + D) / L is within 19% by percentage.
- the value of (H 2 + D) / L is 2% to 20% in percentage.
- the opposing side of the first set is the short side
- the opposing piece of the second set is the long side
- the auxiliary support is located on a central line connecting the centers of the long sides.
- the auxiliary support is a bonding material at at least two locations on the other side of the other side of the first set of opposing sides on the upper surface of the base member. Are joined as.
- first and second auxiliary support portions are located in line symmetry with respect to a center line passing parallel to the long side in the middle between the long sides.
- the piezoelectric vibrating reed has a pair of auxiliary electrodes for separately drawing out the two excitation electrodes on the other side of the other side of the second pair among the two sides of the pair.
- the base member has two auxiliary electrode pads individually connected to the pair of auxiliary electrodes on the top surface, and the first and second auxiliary support portions are configured to support the pair of auxiliary electrodes with the two auxiliary electrodes. Each is electrically connected to the electrode pad.
- the base member has a structure having a concave portion for housing the piezoelectric vibrating reed by a bottom portion and a peripheral portion around the bottom portion, and the bottom portion has a step on the inner bottom surface thereof.
- the electrode pad, the support portion, and the auxiliary support portion are mounted on the stepped portion.
- the bonding material is a paste-like adhesive
- the conductive bonding material of the support part is a paste-like conductive adhesive
- plan view outline of the adhesive of the auxiliary support and the conductive adhesive of the support is circular or oval.
- the thickness of the adhesive of the auxiliary support is 10 ⁇ m to 30 ⁇ m.
- an integrated circuit for driving the piezoelectric vibrating reed is connected to the base member, and is electrically connected to the piezoelectric vibrating reed.
- the piezoelectric vibrating reed is a quartz crystal.
- the stress applied to each support portion and the piezoelectric vibrating reed can be reduced, and the impact resistance can be enhanced.
- FIG. 1 is a cross-sectional view of a quartz oscillator according to an embodiment of the present invention.
- FIG. 2 is a plan view of the crystal oscillator of FIG. 1 with the cover removed.
- FIG. 3 is a perspective view of a first evaluation model of stress simulation in the case of one auxiliary support.
- FIG. 4 is a plan view showing the crystal piece and each support of the evaluation model.
- FIG. 5 is a view for explaining a mounting state on a tire.
- FIG. 6 is a diagram showing simulation results of the evaluation model of the first size.
- FIG. 7 is a diagram showing a simulation result of the evaluation model of the second size.
- FIGS. 8A (1) to (6) are diagrams showing the position of the support portion of the evaluation model of the first size and the distribution of the von Mises stress of the crystal piece.
- FIGS. 8B (7) to (12) are diagrams showing the position of the support portion of the evaluation model of the first size and the distribution of the von Mises stress of the crystal piece.
- FIG. 9 is a perspective view of another evaluation model of stress simulation of two quartz oscillators with an auxiliary support.
- FIG. 10 is a plan view showing a crystal piece and each support of another evaluation model.
- FIG. 11 is a diagram showing simulation results of another evaluation model of the first size.
- FIG. 12 is a diagram showing simulation results of another evaluation model of the second size. (1) to (6) of FIG.
- FIG. 13A are diagrams showing the position of the support portion at the first size and the distribution of the von Mises stress of the crystal piece in another evaluation model.
- (7) to (13) of FIG. 13B is a view showing the position of the support portion at the first size and the distribution of the von Mises stress of the crystal piece in another evaluation model.
- (1) to (6) of FIG. 14A are diagrams showing the position of the support portion at the second size and the distribution of the Mises stress of the crystal piece in another evaluation model.
- (7) to (13) of FIG. 14B are diagrams showing the position of the support portion and the distribution of the von Mises stress of the crystal piece at the second size in another evaluation model.
- FIG. 15 is a plan view showing a modification of the base member of FIG. FIG.
- FIG. 16 is a cross-sectional view of a quartz oscillator having two auxiliary supports and conducting to the excitation electrode of the quartz plate.
- FIG. 17 is a plan view of the crystal oscillator of FIG. 16 with the cover removed.
- FIG. 18 is a plan view of a quartz oscillator serving as an illustration for setting the positions of the auxiliary support portions in the direction of the short side of the crystal piece when there are two auxiliary support portions.
- FIG. 19 is a perspective view of an evaluation model of stress simulation.
- FIG. 20 is a plan view showing the crystal piece and each support of the evaluation model.
- FIG. 21 is a view for explaining a mounting state on a tire.
- FIG. 22 is a diagram showing simulation results of the evaluation model of the first size.
- FIG. 23 is a diagram showing simulation results of the evaluation model of the second size.
- FIG. 24A is a view showing the position of the support of the evaluation model of the second size and the distribution of the von Mises stress of the crystal piece.
- FIG. 24B is a view showing the position of the support of the evaluation model of the second size and the distribution of the von Mises stress of the crystal piece.
- a quartz vibrator that is a piezoelectric vibrator will be described as an example.
- FIG. 1 is a cross-sectional view of a crystal unit according to an embodiment of the present invention
- FIG. 2 is a plan view of the crystal unit of FIG. 1 with a package lid removed.
- the crystal unit 1 includes a crystal piece 2 as a piezoelectric vibrating piece, a base member 3 having a recess 6 for housing the crystal piece 2, and a lid 4 for hermetically sealing the opening of the base member 3. And the base member 3 and the lid 4 constitute a package.
- the recess 6 is formed by a bottom portion 3 a having a rectangular shape in a plan view and a peripheral portion 3 b formed in a frame shape around the bottom portion 3 a.
- the upper surface of the frame-like peripheral portion 3b of the base member 3 made of ceramic and the outer peripheral portion of the lid 4 made of metal are joined via the bonding material 5 such as seal glass, and the lid 4 and the base member 3 are joined.
- the crystal piece 2 is stored in the storage space formed by
- the base member 3 has a substantially rectangular outer shape in plan view.
- a pair of electrode pads 7 and 8 made of metal are formed on the inner bottom surface 3a1 of the base member 3 at the two corners near one short side of the recess 6 of the base member 3.
- the external bottom surface 3a2 of the base member 3 is formed with an external terminal (not shown) joined to an external device or the like by soldering or the like.
- the electrode pads 7 and 8 and the external terminals are electrically connected by internal wiring conductors (not shown).
- the quartz crystal piece 2 is an AT-cut quartz crystal piece having a rectangular shape in plan view, and this rectangular quartz crystal piece 2 has two pairs of opposing sides 2a, 2b; 2c, 2d, and the first pair of opposed members
- the sides 2a and 2b are a pair of parallel short sides, and the opposing sides 2c and 2d of the second set are a pair of parallel long sides.
- a pair of excitation electrodes 9 and 10 for exciting the crystal piece 2 are respectively formed on the front and back main surfaces of the crystal piece 2 at the same corresponding positions in the front and back direction. From each excitation electrode 9 and 10, one short side is formed.
- the lead-out electrodes 11 and 12 are extendedly formed to the both ends of 2a, respectively.
- the pair of lead-out electrodes 11 and 12 of the crystal piece 2 and the electrode pads 7 and 8 of the base member 3 are respectively bonded by conductive adhesives 13 and 13 as a conductive bonding material, and in this embodiment, the conductive The physical adhesives 13, 13 have a circular outline in plan view. Thereby, the short side 2a side of the crystal piece 2 is bonded to the electrode pads 7 and 8 by the conductive adhesives 13 and 13 and supported.
- the conductive adhesives 13 and 13 for example, a silicone-based, urethane-based, or a modified epoxy-based paste-like adhesive containing a conductive filler such as gold or silver can be used.
- a pedestal 14 is provided on the inner bottom surface 3a1 at a central position near the short side 2b of the base member 3.
- An adhesive 16 as a bonding material is joined to the pedestal 14 in a circular outline in plan view.
- the adhesive 16 may be a conductive adhesive or a nonconductive adhesive.
- the height of the pedestal 14 is equal to the height of the upper end of each of the electrode pads 7 and 8, while securing a gap between the crystal piece 2 and the upper surface of the recess 6 of the base member 3. , Supports horizontally.
- the pedestal 14 may be omitted, and the pedestal portions of the electrode pads 7 and 8 may be omitted.
- the back surface of the crystal piece 2 on the short side 2 a side is joined and supported by the first and second support portions M 1 and M 2 made of the conductive adhesive 13 to the electrode pads 7 and 8 of the base member 3.
- the back surface of the side is joined and supported on the pedestal 14 by the auxiliary support S made of the adhesive 16. That is, the quartz crystal piece 2 is supported by the base member 3 at three points of two supporting parts M1 and M2 on one short side 2a side and one auxiliary supporting part S on the other short side 2b side.
- the thickness of the conductive adhesive 13 and the adhesive 16 is, for example, 10 ⁇ m to 30 ⁇ m. This thickness is the thickness of the adhesive 13, 16 after drying and curing after applying the paste-like adhesive 13, 16.
- the crystal unit 1 according to the embodiment in which the crystal piece 2 is supported on the recess 6 of the base member 3 at three points of the two first and second support portions M1 and M2 and one auxiliary support portion S.
- the position of the auxiliary support S will be described.
- the auxiliary support portion S has a predetermined circular joint region with the back surface of the crystal piece 2 on an imaginary center line CL connecting middle points of both short sides 2a and 2b.
- Sa is the recent periphery with respect to the short side 2b of the auxiliary support S
- Sb is the farthest periphery with respect to the short side 2b of the auxiliary support S .
- the auxiliary supporting portion S is located at a position from the short side 2b of the auxiliary supporting portion S, L at a distance between the short sides 2a and 2b, and at a position farthest from the short side 2b (see FIG.
- the distance to the recent peripheral edge Sa of the auxiliary support S at the position of the dotted circle S ′ ′ in (b) is H2
- the diameter of the auxiliary support S is 2 * r (where r is the radius of the auxiliary support S) )
- the value of (H 2 + 2 * r) / L is set to a position that satisfies 20% or less in percentage.
- this position has a value of (H 2 + 2 * r) / L within 19% in percentage. More preferably, the position has a value of (H 2 + 2 * r) / L within 2% to 20% in percentage.
- the outer shape in plan view of the auxiliary support S is a circle with a radius r, but the auxiliary support S may not necessarily be circular.
- the dimension of the auxiliary support S in the distance L direction (the dimension between the latest peripheral edge and the farthest peripheral edge of the auxiliary support S)
- a value obtained by dividing (H 2 + D) by the distance L that is, a position where the value of (H 2 + D) / L is within 20% by percentage, preferably within 19%, more preferably within 2% to 20%.
- the position setting of the auxiliary support portion S is substantially equivalent regardless of whether the shape of the auxiliary support portion S in plan view is circular or non-circular.
- a quartz piece 18 having a rectangular outline in plan view on a plate-like ceramic 17 has one short side 18 a.
- the center portion on the other short side 18b side is M2 and the auxiliary support portion S similarly supported by the conductive adhesive 19.
- the position of the auxiliary support portion S is between the short sides 18a and 18b.
- a stress simulation was performed in the case of changing along the virtual center line CL connecting each middle point.
- the evaluation model 21 of the first size is the size (long side * short side) of the rectangular crystal piece 18, that is, the length L of the long side of the crystal piece 18 in FIG. 4.
- the width W of the short side is 1.8 mm * 1.1 mm
- the radius R of the adhesive 19a of the supports M1 and M2 is 0.16 mm
- the radius r of the adhesive 19b of the auxiliary support S is 0.12 mm It is.
- the size of the crystal piece 18 is 2.2 mm * 1.4 mm
- the radius R of the adhesive 19 a of the supports M1 and M2 is 0.20 mm
- the auxiliary support S is
- the radius r of the adhesive 19 b is 0.15 mm
- the thickness of each of the adhesives 19a and 19b of the supporting portions M1 and M2 and the auxiliary supporting portion S is 0.025 mm
- the thickness of the crystal piece 18 is 0.085 mm.
- FIG. 4A shows the recent peripheral edge Sa and the farthest peripheral edge Sb with respect to the short side 2b of the auxiliary support portion S, and the distance from the short side 2b to the recent peripheral edge Sa is indicated by H. Further, FIG.
- FIG. 4B shows the recent peripheral edge when the auxiliary support portion S is at a position (the position indicated by a dotted circle S ') that is closest to the short side 2b when the auxiliary support portion S is moved and changed.
- the distance H from the short side 2b of Sa is denoted by H1
- the short side 2b of the recent peripheral edge Sa when the auxiliary support portion S is at a position farthest from the short side 2b position shown by dotted circle S ′ ′
- the distance H from H is indicated by H2.
- the diameter of the auxiliary support S is indicated by 2r.
- the crystal unit 1 When the crystal unit 1 is mounted as a sensor module of a tire pressure monitoring system (TPMS), as shown in FIG. 5, the rotational axis direction of the tire 20 rotating in the arrow A direction is Y, and the centrifugal direction is Z Assuming that the traveling direction is X, the crystal piece 18 is mounted such that the width direction thereof is along the rotation axis direction Y, and the centrifugal direction Z is orthogonal to the upper and lower surfaces of the crystal piece 18.
- TPMS tire pressure monitoring system
- FIG. 4 shows the above respective directions in the stress simulation, and the rotational axis direction Y of the tire is a width direction along the short sides 18 a and 18 b of the quartz piece 18, and the running direction X of the tire is the quartz piece 18.
- the centrifugal direction z according to the rotation of the tire is perpendicular to the upper and lower surfaces of the crystal piece 18 in the longitudinal direction along the long sides 18 c and 18 d.
- the distance H from the short side 18b to the short side 18b on the center line CL is a plus distance when the peripheral edge Sa of the auxiliary support S is positioned inward of the short side 18b. (+), It was negative (-) when exposed outside.
- the range in which the distance H is 0.05 to 0.55 mm indicates a preferred distance range from the short side 18b of the auxiliary support S, that is, an ideal application position range.
- the application position is the application position from the short side 18 b of the adhesive 19 b to be the auxiliary support portion S of the crystal piece 18.
- the maximum tensile stress of the adhesive 19b in the ideal application position range is a minimum of 400 (kgf / mm 2) when the distance H is 0.4 mm
- the distance H is 0.35 mm at which the maximum von Mises stress at the central portion of the crystal piece 18 is 602 (kgf / mm 2).
- the ideal application position range is a stress difference of 70% which is a difference from the stress value of 0%.
- the distance H is in the range of 0.05 to 0.55 mm, and within 80%, the distance H is in the range of 0.001 to 0.55 mm.
- this stress difference are respectively referred to as “within 70% stress difference” and “within 80% stress difference”.
- Table 3 is graphed in FIG. 6 so as to be easily understood visually.
- the horizontal axis of this graph is the distance H
- the left vertical axis is adhesive tensile stress
- the right vertical axis is quartz crystal Mises stress. It can be seen that the maximum tensile stress of the adhesive 19 increases at any distance with a distance H of 0.4 mm, and the maximum von Mises stress increases at any distance with a distance H of 0.35 mm. .
- Tables 5 and 6 show stress simulation results, and Table 5 shows the long side dimension (blank L dimension) of the quartz piece 1.8 mm, center line within the stress difference of 70% and the stress difference of 80%.
- the ideal right edge distance is H1
- this distance H1 is 0.05 mm within the stress difference of 70% and within the stress difference of 80%
- a value obtained by adding the diameter 2 * r (r is the radius of the auxiliary support S) of the auxiliary support S to the distance H taken as H2 is 0.001 mm, that is, the auxiliary support farthest from the short side 18b
- Table 6 considers the case where the excitation electrode is formed on the quartz piece, and unlike Table 5, the ideal left edge distance (H 2 + 2 * r) is within 70% stress difference and within 80% stress difference. In both cases, the value of (H 2 + 2 * r) / L is within a stress difference of 70% and 19% within a stress difference of 80%.
- Tables 7 to 10 correspond to Tables 3 to 6, and the meanings of oblique lines, rough oblique lines, frames and the like are the same as those of Tables 3 to 6 except that the size of the evaluation model is different. Further, since the size is changed from the first size to the second size, Tables 7 to 10 differ from Tables 3 to 6 in detailed numerical values, but the description thereof will be omitted.
- the ideal left edge distance (H 2 + 2 * r) is within 70% of the stress difference and 80% of the stress difference, different from Table 6 at the first size.
- H1 / L is within 70% of stress difference
- 2% of stress difference is within 2%, 0% respectively
- the value of (H 2 + 2 * r) / L is 70% of stress difference in percentage Within 20% of stress differences within 80%.
- FIG. 7 is a plot of the data of Table 7 as well as the relationship between Table 3 and FIG. The rest is the same as in Tables 3 to 6, so that the description thereof is not particularly repeated.
- the distance H in Table 3 is from -0.02 to 0.7.
- 18 kinds of distribution change of von Mises stress of the quartz piece 18 are shown.
- the left row (a) shows the position of each support, and the right row (b) shows the distribution of the Mises stress of the crystal piece 18.
- the Mises stress increases, what is shown stepwise from purple to red in rainbow color is converted and shown as a gray-scale image.
- the distribution change of the von Mises stress of the crystal piece 18 when the distance H in Table 10 changes at the level of ⁇ 0.15 to 0.85 is omitted.
- the crystal piece is a three-point support of two support portions and one auxiliary support portion S
- the auxiliary support portions may be two of S1 and S2
- the crystal piece may be supported at four points .
- the first and second support portions M1 and M2 are supported by the conductive adhesive 19 at both ends of the short side 18a of
- the first and second auxiliary support portions S1 and S2 supported by the conductive adhesive 19 on both sides of the other short side 18b with respect to the center line CL
- Stress simulation was performed in the case where the positions of the auxiliary support portions S1 and S2 were changed along the direction between the short sides 18a and 18b along the center line CL.
- the adhesive of the first and second auxiliary support portions S1 and S2 is interposed between the crystal piece 18 and the ceramic 17.
- the values of Table 11 below were used for Young's modulus (Kgf / mm 2) and density (Kgf / mm 3) which are physical property values of the ceramic 17, the quartz piece 18 and the adhesive 19 in this evaluation model.
- this evaluation model has a first size evaluation model 21 of the rectangular crystal piece 18, that is, the length L and the width W of the crystal piece 18 are 1.8 mm * 1.
- the radius R of the adhesive 19 of the supporting portions M1 and M2 is 0.16 mm
- the radius r of the adhesive 19 of the first and second auxiliary supporting portions S1 and S2 is 0.12 mm.
- the size of the crystal piece 18 is 2.2 mm * 1.4 mm, and the radius R of the adhesive 19 of the support portions M1 and M2 is 0.20 mm, and the first and second The radius r of the adhesive 19 of the auxiliary support portions S1 and S2 is 0.15 mm.
- the thickness of the adhesive 19 of each of the supporting portions M1 and M2 and the first and second auxiliary supporting portions S1 and S2 is 0.025 mm in any size, and the thickness of the crystal piece 18 is the first and second Both sizes are 0.085 mm.
- the first and second auxiliary support portions are on the center line CL connecting the middle points of both short sides 18a and 18b of the quartz piece 18
- a linear static analysis corresponding to centrifugal acceleration 2000 G when S 1 and S 2 were moved and changed was performed.
- Tables 13 to 16 and FIG. 11 show the results of stress simulation when the size is the first size in the evaluation model shown in the perspective view of FIG. 9 and the plan view of FIG.
- Table 13 shows that when the distance H is 0.05 to 0.56 mm, the first and second auxiliary support portions S1 and S2 are in the ideal position, and the ideal position range of the first and second auxiliary support portions S1 and S2 Shown by hatching.
- the distance H is 0.4 mm that the maximum tensile stress of the adhesive 19 in the ideal position range is 453 (kgf / mm 2) which is the smallest.
- Table 13 is shown graphically in FIG.
- the horizontal and left and right vertical axes in FIG. 11 correspond to FIG.
- Table 14 corresponds to Table 13, and is the same as the correspondence between Table 3 and Table 4, so detailed description will be omitted.
- the part enclosed by a frame in Table 13 and Table 14 shows a preferable range.
- H2 + 2 * r has a stress difference of 70% or less and a stress difference of 80% or less.
- the value of (H 2 + 2 * r) / L is within a percentage difference of 70% and within 19% of each other.
- Tables 17 to 20 correspond to Tables 13 to 16 respectively, and thus the details are omitted, but as shown in Table 20, different from the first size, H 2 + 2 * r has a stress difference within 70%, Within 80% of stress difference, both are 0.45 mm, H1 / L is within 70% of stress difference, and within 80% of stress difference is 2% and 0% respectively, and the value of (H 2 + 2 * r) / L is percentage of stress difference Within 70%, stress difference within 80% are both 20%.
- FIG. 12 is a plot of the data in Table 17.
- the distance H in Table 13 is ⁇ 0.12 to 0.001 to 0.
- the distribution change of the von Mises stress of the crystal piece 18 is shown.
- 13A and 13B like FIG. 8, the left row (a) shows the position of each support, and the right two rows (b) and (c) show the distribution of the von Mises stress on the front and back of the crystal piece 18, respectively. ing.
- the magnitude of the Mises stress of the quartz piece 18 is gradually converted from purple to red as a rainbow color as the stress increases, and converted to a gray-scale image.
- the auxiliary support S is disposed in a specific area, the tensile stress of the adhesive of each support is obtained even if a high centrifugal acceleration of, for example, 2000 G is applied. And it becomes possible to reduce the Mises stress of a crystal piece, and can improve impact resistance.
- an integrated circuit for exciting and driving a quartz piece may be joined to the base member and electrically connected to the quartz piece.
- a base member having a space for housing an integrated circuit under a crystal piece is used, and an integrated circuit (IC) is housed in the space of the base member,
- the crystal piece may be supported as described above, covered with a lid, and hermetically sealed.
- the inner bottom surface 3a1 of the bottom 3a of the base member 3 is flat except for the pedestal 14, and the electrode pads 7, 8 are formed on the flat inner bottom surface 3a1.
- a step portion 3c which is a step higher than the inner bottom surface 3a1 is formed over the entire periphery of the inner bottom surface 3a1 near the outer periphery, and the electrode pads 7, 8 and the first,
- the second supports M1 and M2 and the auxiliary support S may be formed.
- the stepped portion 3c includes a pair of stepped portions 3c1 and 3c2 in which the electrode pads 7 and 8 are formed, a stepped portion 3c3 in which the auxiliary support portion S is formed, and stepped portions 3c4 to 3c6 connecting the stepped portions 3c1 to 3c3. And consists of The step portions 3c1 to 3c3 are wide, and the step portions 3c4 to 3c6 are narrow. The wide step portions 3c1 and 3c2 are connected by the narrow step portions 3c6 to form a concave portion 3d between which the inner bottom surface 3a1 is exposed.
- FIG. 16 is a cross-sectional view of the quartz oscillator
- FIG. 17 is a plan view of the quartz oscillator of FIG. 16 with the package lid removed.
- the parts corresponding to FIGS. 1 and 2 are given the same reference numerals.
- the crystal unit 31 includes two first and second auxiliary support portions S1 and S2 as in the case of the crystal unit 23 of FIGS.
- the base member 3 has stepped portions 3c1 to 3c6 on the inner bottom surface 3a1 similarly to the base member in FIG.
- the step portion 3c31, 3C32 is configured to correspond to the first and second auxiliary support portions S1, S2.
- the first and second auxiliary supporting portions S1 and S2 have a function of supporting the short side 2b of the crystal piece 2
- the excitation electrodes 9 and 10 of the crystal piece 2 are electrically conducted.
- the crystal unit 31 has auxiliary extraction electrodes 11a and 12a for extracting the excitation electrodes 9 and 10 of the crystal piece 2 to the short side 2a in addition to the extraction electrodes 11 and 12 for extracting the excitation electrodes 9 and 10 to the short side 2b.
- the auxiliary electrode pads 7a, 8a corresponding to the auxiliary lead-out electrodes 11a, 12a on the step portions 3c31, 3c32. Is provided.
- the lead-out electrodes 11, 12 and the electrode pads 7, 8 of the crystal piece 2 are joined by the conductive adhesives 13, 13 constituting the first and second support portions M1, M2, and the auxiliary lead-out electrode 11a and 12 and the auxiliary electrode pads 7a and 8a are joined by conductive adhesives 13a and 13a which constitute the first and second auxiliary support portions S1 and S2.
- the excitation electrodes 9 and 10 are drawn to the lead electrodes 11 and 12 on the short side 2a side of the quartz piece 2 and electrically conducted to the outside by the electrode pads 7 and 8
- the conductive adhesives 13 and 13 are The conductive adhesives 13a and 13a can function as the first and second auxiliary supports S1 and S2 as the first and second supports M1 and M2, respectively.
- the crystal unit 31 is electrically supported at four points in addition to being supported at four points of the first and second support portions M1 and M2 and the first and second auxiliary support portions S1 and S2. Therefore, even if the quartz vibrator 31 loses the electrical conduction on one side of the short side 2a or the short side 2b of the crystal piece 2 due to high centrifugal acceleration, the other electrical conduction is As a result, it can be maintained to function as a quartz oscillator and impact resistance is improved.
- the distance from the short side 2b of the crystal piece 2 to the rims Sa1 and Sa2 of the first and second auxiliary support portions S1 and S2 is H, and the distance between the short sides 2a and 2b is The maximum tensile stress exerted on the first and second auxiliary support portions S1 and S2 and the maximum center mises of the crystal piece 2 in the range of the distance H with L and the diameters of the first and second auxiliary support portions S1 and S2 being 2r
- the distance H where the two stresses become maximum is H2
- the positions of the first and second auxiliary support portions S1 and S2 are the value of (H2 + 2 * r) / L Is set to a position that satisfies 20% or less in percentage.
- the first and second auxiliary supporting portions S1 and S2 are different from the above embodiment in that the opposing distance between the long sides 2c and 2d of the crystal piece 2 is 100%, and each length
- the distance from each of the sides 2c and 2d to the center line CL may be 50%, and the distance from the opposite side located on the same side with respect to the center line CL may be 43% or less.
- they may be disposed in the region of 5% or more and 39% or less.
- first and second auxiliary support portions S1 and S2 will be described with reference to FIG.
- the positions of the support portions M1 and M2; S1 and S2, in particular, the first and second auxiliary support portions S1 and S2 are defined as follows. There is.
- the distance D from each of the long sides 2c and 2d of the rectangular crystal piece 2 to the center line CL is 50%, ie, the short sides 2a and 2b of the crystal piece 2
- the first and second auxiliary support portions S1 and S2 are on the same side with respect to the center line CL of both long sides 2c and 2d of the crystal piece 2 when the width dimension which is the length of Specifically, the first auxiliary support S1 is a distance H from one long side 2c, and the second auxiliary support S2 is a distance H from the other long side 2d.
- the first auxiliary support S1 is a distance H from one long side 2c
- the second auxiliary support S2 is a distance H from the other long side 2d.
- first and second auxiliary support parts S1 and S2 are disposed in the area means that the bonding material of the first and second auxiliary support parts S1 and S2 is located in the area.
- the outer shape (projected shape) of the adhesive in plan view after drying and curing after applying a paste-like adhesive as a bonding material is located in the region.
- the first and second auxiliary support portions S1 and S2 are respectively disposed in a region where each distance H from the long sides 2c and 2d located on the same side with respect to the center line CL is 5% or more and 39% or less Is more preferable.
- the centrifugal acceleration 2000G is Stress simulation was performed using the finite element method assuming this.
- the quartz piece 18 having a rectangular outline in plan view is one short side 18a.
- the first and second main supporting portions M1 and M2 are supported by the conductive adhesive 19 at their both ends.
- the first and second auxiliary support portions S1 and S2 are similarly supported by the conductive adhesive 19 at two locations on the other short side 18b side of M2 and the first and second auxiliary support
- the stress simulation was performed when the positions of the portions S1 and S2 were changed along the short side 18b.
- the radius R of the auxiliary support portions S1 and S2 and the radius r of the adhesive 19 having a circular outer shape in plan view were used for two types of evaluation models 21 having different first and second sizes.
- the evaluation model 51 of the first size is the size (long side * short side) of the rectangular crystal piece 18, that is, the length L and the width W of the crystal piece 18 in FIG.
- the radius R of the adhesive 19 of the main supports M1 and M2 is 0.16 mm
- the radius r of the adhesive 19 of the auxiliary supports S1 and S2 is 0.12 mm.
- the size of the crystal piece 18 is 2.2 mm * 1.4 mm
- the radius R of the adhesive 19 of the main support portions M1 and M2 is 0.20 mm
- the auxiliary support portion S1. , S2 and the radius r of the adhesive 19 is 0.15 mm.
- the thickness of the adhesive 19 of each of the main support portions M1 and M2 and the auxiliary support portions S1 and S2 is 0.025 mm
- the thickness of the crystal piece 18 is 0.085 mm.
- the first and second auxiliary support portions S1 and S2 are axisymmetrical with respect to the center line CL as an axis of symmetry, and accordingly, the near side peripheral distances h1 of the first and second auxiliary support portions S1 and S2 become equal. .
- the first and second auxiliary support portions S1 and S2 are disposed on the short side 18b side and at the end edge of the rectangular crystal piece 18.
- the first and second auxiliary support portions S1 and S2 are respectively spaced apart on their peripheral edges S1b and S2b, that is, the distance h2 to the peripheral edges S1b and S2b on which the circular adhesive 19 is separated (hereinafter referred to as “separation peripheral distance "Also refers to the diameter (2.r) of the adhesive 19 of the auxiliary support portions S1 and S2 at the near side peripheral distance h1, as shown in FIG. 20, that is, 0.24 (the first size).
- the second size has a value obtained by adding 0.30 (0.15.times.2) mm to the second size.
- the crystal unit 1 When the crystal unit 1 is mounted as a sensor module of a tire pressure monitoring system (TPMS), as shown in FIG. 21, the rotational axis direction of the tire 20 rotating in the direction of arrow mark A is Y, and the centrifugal direction is Z Assuming that the traveling direction is X, the crystal piece 18 is mounted such that the width direction thereof is along the rotation axis direction Y, and the centrifugal direction Z is orthogonal to the upper and lower surfaces of the crystal piece 18.
- TPMS tire pressure monitoring system
- FIG. 20 shows the above respective directions in the stress simulation, and the rotational axis direction Y of the tire is the width direction along the short sides 18 a and 18 b of the quartz piece 18, and the running direction X of the tire is the quartz piece 18.
- the centrifugal direction z according to the rotation of the tire is perpendicular to the upper and lower surfaces of the crystal piece 18 in the longitudinal direction along the long sides 18 c and 18 d.
- the maximum von Mises stress at the center of piece 18 was calculated.
- the central portion of the crystal piece 18 was a region having a radius of 0.3 mm from the center of the rectangular crystal piece 18.
- the distance h1 from the long sides 18a and 18b of the rectangular crystal piece 18 to the peripheral edges S1a and S2a on the side close to the auxiliary support portions S1 and S2 is an area inside the rectangular crystal piece 18 in the auxiliary support portion S1.
- S2 are plus (+), when a part of the auxiliary supports S1, S2 is located outside the rectangular crystal piece 18, that is, a part of the auxiliary supports S1, S2 is a rectangular crystal When it is seen from 18 it is considered negative (-).
- Table 23 shows the results of stress simulation for the first size.
- FIG. 22 is a graph in which the maximum tensile stress of the adhesive 19 and the maximum von Mises stress at the central portion of the crystal piece 18 are plotted against the near side peripheral distance h1 in the data of Table 23, respectively.
- the white points indicate minimum values.
- the maximum tensile stress of the adhesive 19 and the maximum von Mises stress of the central portion of the crystal piece 18 gradually decrease.
- Preferred first and second auxiliary supports wherein the maximum tensile stress of the adhesive 19 is 1124 (kgf / mm2) or less and the maximum von Mises stress of the central portion of the crystal piece 18 is 523 (kgf / mm2) or less
- the near side peripheral distance h1 is a distance from each long side 18c, 18d of the quartz crystal piece 18 to the peripheral peripheries S1a, S2a of the first and second auxiliary supporting portions S1, S2 on the adjacent side.
- the distances from the long sides 18c and 18d to the separated edges S1b and S2b of the first and second auxiliary support portions S1 and S2, that is, the above-mentioned separated side peripheral distance h2 is the auxiliary side peripheral distance h1
- the region where the first and second auxiliary support portions S1 and S2 may exist is from 0.001 mm which is the minimum value of the proximity side peripheral distance h1 to 0.50 mm which is the maximum value of the separation side peripheral distance h2 Area of
- both the near side peripheral distance h1 and the separated side peripheral distance h2 are center lines connecting the middle points of both short sides 18a and 18b of the long sides 18c and 18d of the crystal piece 18 It is the distance H from the long sides 18c and 18d located on the same side as the auxiliary support portions S1 and S2 with respect to CL.
- H 0.001 mm to 0.50 mm.
- H 0.001 mm to 0.50 mm. Be placed.
- the distance D from the long sides 18c and 18d of the rectangular crystal piece 18 to the center line CL is 50%, that is, the width of the crystal piece 18 which is the length of the short sides 2a and 2b of the crystal piece 18
- W (1.1 mm) is 100%
- This area is 50 / 1.1) ⁇ 100 ⁇ .
- the maximum tensile stress of the adhesive 19 is 1124 (kgf / mm 2) or less and the maximum von Mises stress of the central portion of the crystal piece 18 is 523 (kgf / mm 2) or less.
- the auxiliary support portions S1 and s2 are disposed in the area where the distance H from the long sides 18c and 18d is 0% to 46%.
- the first and second auxiliary support portions S1 and S2 are from the long sides 18c and 18d located on the same side with respect to the center line CL.
- the maximum tensile stress of the adhesive 19 is 1108 (kgf / mm 2) or less, and the central portion of the crystal piece 18
- the shaded area in Table 3 is a range.
- the region where the first and second auxiliary support portions S1 and S2 may exist is from 0.06 mm which is the minimum value of the proximity side peripheral distance h1 to 0.46 mm which is the maximum value of the separation side peripheral distance h2 Area of
- the first and second more preferable first and second maximum tensile stresses of the adhesive 19 are 1108 (kgf / mm2) or less, and the maximum von Mises stress of the central portion of the crystal piece 18 is 516 (kgf / mm2) or less
- the auxiliary support portions S1 and S2 are disposed in an area in which the distance H from the long sides 18c and 18d is 5% to 42%.
- the ratio of the difference between the maximum tensile stress and the minimum tensile stress of the adhesive 19 to the minimum tensile stress, and the maximum Mises stress and the minimum Mises stress at the center of the crystal piece 18 is all within 1.5%.
- the first and second auxiliary support portions S1 and S2 are from the long sides 18c and 18d located on the same side with respect to the center line CL.
- the distance H from the long sides 18c and 18d is 5% to 42%.
- Table 25 shows the results of stress simulation for the second size.
- FIG. 23 plots the data of Table 5 with the maximum tensile stress of the adhesive 19 and the maximum von Mises stress at the central portion of the crystal piece 18 with respect to the near side peripheral distance h1.
- the white points indicate minimum values.
- the maximum tensile stress of the adhesive 19 and the maximum von Mises stress of the central portion of the crystal piece 18 gradually become smaller.
- the maximum von Mises stress at the center of the crystal piece 18 is minimized when the near side peripheral distance h1 is about 0.15 mm, and the maximum tensile stress of the adhesive 19 is minimized at about 0.2 mm, and then bonding is performed.
- the maximum tensile stress of the agent 19 and the maximum von Mises stress at the center of the quartz piece 18 gradually increase.
- Preferred first and second auxiliary supports wherein the maximum tensile stress of the adhesive 19 is 1487 (kgf / mm 2) or less and the maximum von Mises stress of the central portion of the crystal piece 18 is 708 (kgf / mm 2) or less
- the region where the first and second auxiliary support portions S1 and S2 may exist is from 0.001 mm, which is the minimum value of the proximity side peripheral distance h1, to 0.60 mm, which is the maximum value of the separation side peripheral distance h2.
- this region is expressed by the distance H from the long sides 18c and 18d located on the same side as the auxiliary support portions S1 and S2 with respect to the center line CL among both long sides 18c and 18d of the quartz piece 18, H It is 0.001 mm to 0.60 mm.
- the maximum tensile stress of the adhesive 19 is 1487 (kgf / mm 2) or less and the maximum von Mises stress of the central portion of the crystal piece 18 is 708 (kgf / mm 2) or less.
- the maximum tensile stress of the adhesive 19 is 1487 (kgf / mm 2) or less, and the maximum von Mises stress of the central portion of the crystal piece 18 is 708 (kgf / mm 2) or less.
- the auxiliary support portions S1 and S2 are disposed in an area where the distance H from the long sides 18c and 18d is 0% to 43%.
- the first and second auxiliary support portions S1 and S2 are from the long sides 18c and 18d located on the same side with respect to the center line CL.
- the maximum tensile stress of the adhesive 19 is 1466 (kgf / mm 2) or less, and the central portion of the crystal piece 18
- the region where the first and second auxiliary support portions S1 and S2 may exist is from 0.05 mm which is the minimum value of the proximity side peripheral distance h1 to 0.55 mm which is the maximum value of the separation side peripheral distance h2 Area of
- the first and the second most preferable ones of the adhesive 19 having the maximum tensile stress of 1466 (kgf / mm 2) or less and the maximum von Mises stress of the central portion of the quartz piece 18 of 698 (kgf / mm 2) or less
- the first and second most preferable first and second maximum tensile stresses of the adhesive 19 are 1466 (kgf / mm 2) or less and the maximum von Mises stress of the central portion of the quartz piece 18 is 698 (kgf / mm 2) or less
- the two auxiliary support portions S1 and S2 are disposed in an area in which the distance H from the long sides 18c and 18d is 4% to 39%.
- the ratio of the difference between the maximum tensile stress and the minimum tensile stress of the adhesive 19 to the minimum tensile stress, and the maximum Mises stress and minimum Mises stress at the center of the crystal piece 18 is all within 1.5%.
- the first and second auxiliary support portions S1 and S2 are from the long sides 18c and 18d located on the same side with respect to the center line CL.
- the positions of the preferable first and second auxiliary support portions S1 and S2 capable of suppressing the maximum tensile stress of the adhesive 19 and the maximum von Mises stress of the central portion of the quartz piece 18 are The region where the distance H is 0% to 43%, and the more preferable position of the first and second auxiliary support portions S1 and S2 is a region where the distance H is 5% to 39%.
- FIGS. 24A and 24B the distribution of the von Mises stress of the crystal piece 18 is shown in FIGS. 24A and 24B.
- the left side shows the position of each support, and the right side shows the distribution of the Mises stress of the crystal piece 18.
- FIGS. 24A and 24B show the magnitude of the von Mises stress of the crystal piece 18 stepwise from purple (0.0 kgf / mm 2) to red (1540 kgf / mm 2) as the stress increases. Is converted to a gray scale image.
- Has a near side peripheral distance h1 of h1 0.35 mm.
- FIG. 24A As shown in (a) ⁇ (g), the first and second auxiliary support portions S1 and S2 are moved in directions approaching each other, and in FIG. 24B, (g) ⁇ (k) As shown in the figure, the state which moved 1st, 2nd auxiliary
- the von Mises stress at the central portion of the quartz piece 18 gradually decreases. It becomes a minimum at 0.15 mm, and then the von Mises stress at the center of the quartz piece 18 gradually increases.
- each support portion is subjected to a high centrifugal acceleration of, for example, 2000 G. It becomes possible to reduce the tensile stress of each adhesive 19 of M1 and M2; S1 and S2 and the von Mises stress of the crystal piece 18, and the impact resistance can be improved.
- the present invention can also be applied to a piezoelectric vibrating piece of square plan view.
- a brazing material instead of the adhesive, a brazing material, a metal bump or the like may be used.
- the adhesive is not interposed on the upper surface of the crystal piece as the piezoelectric vibrating piece, the adhesive is applied to the electrode pad of the base member to form the crystal piece After mounting, the upper surface of the crystal piece may be further coated with an adhesive so that an adhesive may be interposed, whereby more reliable electro-mechanical bonding may be performed.
- the present invention relates to a piezoelectric vibrating reed comprising a piezoelectric material such as lithium tantalate or lithium niobate other than quartz. It is applicable to the used piezoelectric vibrator.
- the base member 3 is configured to have a recess, but the base member 3 may be formed in a plate shape without a recess and may be configured to have a recess on the lid 4 side.
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Abstract
Description
平面視外形が矩形でかつ表裏主面に励振電極を備え、かつ、前記矩形をなす二組の対向辺のうち、第1組の対向辺の一方の対向辺側に前記両励振電極を個別に引き出す一対の電極を有する圧電振動片と、
上面に前記一対の電極に個別に接続される二つの電極パッドを有するベース部材と、
前記一対の電極を前記二つの電極パッドにそれぞれ電気的に接合する導電接合材からなり、前記圧電振動片の裏面の前記第1組の対向辺の一方の対向辺側を支持する第1、第2支持部と、
を備えた圧電デバイスであって、
前記圧電振動片の裏面側における前記第1の組の対向辺の他方の対向辺側の少なくとも一箇所を所定の接合領域で前記ベース部材の上面に接合する接合材からなり、前記圧電振動片の裏面の前記第1組の対向辺の他方の対向辺側を支持する補助支持部を設け、
前記補助支持部の前記第1組の他方の対向辺からの位置を、前記第1組の前記両対向辺間の距離をL、前記第1組の他方の対向辺から最遠となる位置にある当該補助支持部の前記第1組の他方の対向辺から最近の周縁までの距離をH2、前記補助支持部の前記第1組の他方の対向辺から最近の周縁と最遠の周縁との間の前記距離L方向の距離をDとし、(H2+D)/Lの値が百分率で20%以内を満たす位置に設定したしたことを特徴とする。
表3ないし表6、および図6は、第1のサイズについての応力シミュレーションの結果を示すものである。
表7ないし表10、および図7は、第2のサイズについての応力シミュレーションの結果を示すものである。
表13ないし表16、および図11は、図9の斜視図、図10の平面図に示す評価モデルにおいて、そのサイズが第1のサイズであるときの応力シミュレーションの結果を示すものである。
表17ないし表20、および図12は、第2のサイズについての応力シミュレーションの結果を示すものである。
表23は、第1のサイズについての応力シミュレーションの結果を示すものである。
次に、第2のサイズについて、応力シミュレーションの結果を説明する。
2,18 水晶片(圧電振動片)
3 ベース部材
4 蓋体
7,8 電極パッド
9,10 励振電極
11,12 引出電極
13 導電性接着剤
16,19 接着剤
Claims (13)
- 平面視外形が矩形でかつ表裏主面に励振電極を備え、かつ、前記矩形をなす二組の対向辺のうち、第1組の対向辺の一方の対向辺側に前記両励振電極を個別に引き出す一対の電極を有する圧電振動片と、
上面に前記一対の電極に個別に接続される二つの電極パッドを有するベース部材と、
前記一対の電極を前記二つの電極パッドにそれぞれ電気的に接合する導電接合材からなり、前記圧電振動片の裏面の前記第1組の対向辺の一方の対向辺側を支持する第1、第2支持部と、
を備えた圧電デバイスであって、
前記圧電振動片の裏面側における前記第1の組の対向辺の他方の対向辺側の少なくとも一箇所を所定の接合領域で前記ベース部材の上面に接合する接合材からなり、前記圧電振動片の裏面の前記第1組の対向辺の他方の対向辺側を支持する補助支持部を設け、
前記補助支持部の前記第1組の他方の対向辺からの位置を、
前記第1組の前記両対向辺間の距離をL、
前記第1組の他方の対向辺から最遠となる位置にある当該補助支持部の前記第1組の他方の対向辺から最近の周縁までの距離をH2、
前記補助支持部の前記第1組の他方の対向辺から最近の周縁と最遠の周縁との間の前記距離L方向の距離をDとし、(H2+D)/Lの値が百分率で20%以内を満たす位置に設定した、ことを特徴とする圧電デバイス。 - 前記(H2+D)/Lの値が百分率で19%以内である、請求項1に記載の圧電デバイス。
- 前記(H2+D)/Lの値が百分率で2%~20%である、請求項1に記載の圧電デバイス。
- 前記矩形をなす二組の第1、第2組の対向辺のうち、第1組の対向辺は短辺であり、第2組の対向片は長辺であり、前記両短辺の中央を結ぶ中心線上に前記補助支持部が位置している、請求項1ないし3のいずれかに記載の圧電デバイス。
- 前記補助支持部が、前記第1の組の対向辺の他方の対向辺側の少なくとも二箇所に接合材で前記ベース部材の上面に第1、第2補助支持部として接合されている、請求項1ないし4のいずれかに記載の圧電デバイス。
- 前記両短辺の中央を結ぶ中心線に対して線対称の位置に前記両第1、第2補助支持部が位置している、請求項5に記載の圧電デバイス。
- 前記圧電振動片は、前記二組の対向辺のうち、第1組の対向辺の他方の対向辺側に前記両励振電極を個別に引き出す一対の補助電極を有し、
前記ベース部材は、上面に前記一対の補助電極に個別に接続される二つの補助電極パッドを有し、
前記第1、第2補助支持部は、前記一対の補助電極を前記二つの補助電極パッドにそれぞれ電気的に接合している、請求項5または6に記載の圧電デバイス。 - 前記ベース部材は、底部と、前記底部周囲の周部とにより、前記圧電振動片を収納する凹部を有した構造を備え、
前記底部は、その内底面に段差部を備え、
前記段差部に、前記電極パッド、前記支持部および前記補助支持部を搭載した、請求項1ないし7のいずれかに記載の圧電デバイス。 - 前記接合材が、ペースト状の接着剤である。請求項1ないし8のいずれかに記載の圧電デバイス。
- 前記補助支持部の平面視外形が、円形あるいは楕円形である、請求項1ないし9のいずれかに記載の圧電デバイス。
- 前記補助支持部の厚みが、10μm~30μmである、請求項9または10に記載の圧電デバイス。
- 前記ベース部材に前記圧電振動片を励振駆動する集積回路を接合し、前記圧電振動片と電気的に接続した前記請求項1ないし11のいずれかに記載の圧電デバイス。
- 前記圧電振動片が、水晶片である、請求項1ないし12のいずれかに記載の圧電デバイス。
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