TWI663749B - Light emitting apparatus and manufacturing method thereof - Google Patents

Abstract

The invention provides a light-emitting device including a light-emitting structure. The light-emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is located on the first conductive layer as a light-emitting layer, and the second conductive layer A layer is located on the active layer; a first metal layer is located on the light emitting structure and electrically contacts the first conductive layer; a second metal layer is located on the light emitting structure and is electrically contacted to the second conductive layer; wherein the first metal layer or The second metal layer has a roughened surface, and the roughened surface has a surface roughness between 0.5 μm and 5 μm.

Description

Light emitting device and manufacturing method thereof

The invention relates to a light-emitting element and a manufacturing method thereof, and a light-emitting element array and a manufacturing method thereof, particularly a light-emitting device and a manufacturing method thereof.

The conventional light-emitting diode (LED) packaging technology is to first dispense on a sub-mount, and then fix the light-emitting diode wafer to the wafer holder to form a light-emitting diode element. This step is called It is die bonding. Solid crystal adhesives are mainly conductive silver adhesives or other non-conductive epoxy resins. The light emitting diode element is then combined on the circuit board. A flip chip type light emitting diode system exposes the p-type semiconductor conductive layer and the n-type semiconductor conductive layer in the diode structure to the same side, so that the cathode and anode electrodes can be fabricated on the diode structure. On the same side, the light emitting diode structure provided with the cathode and anode electrodes can be directly covered on a solder. In this way, the need to use traditional metal wire bonding can be eliminated. However, the conventional flip-chip light-emitting diodes still need to be connected to the circuit board through packaging steps such as cutting and die bonding. Therefore, if the electrode of the flip-chip light-emitting diode has a sufficiently large contact area, the conventional packaging step can be omitted.

Generally, the operating current of traditional LEDs is about tens to hundreds of milliamperes (mA), but the brightness is often insufficient to meet the requirements of general lighting. If a large number of LEDs are combined to increase the brightness, the volume of the LED lighting element will increase and the competition in the market will decrease. Therefore, it is an inevitable trend to increase the brightness of the crystals of a single LED. However, when LEDs are moving towards high brightness, the operating current and power of a single LED increase several times to hundreds of times that of traditional LEDs. For example, the operating current of a high brightness LED is about several hundred milliamps to several amps. Makes the heat problem that LED produces cannot be ignored. The performance of LEDs will be reduced due to "heat". For example, thermal effects will affect the light emitting wavelength of LEDs, and semiconductor characteristics will also cause brightness attenuation due to heat, and even more serious, even cause component damage. Therefore, how to dissipate heat in high-power LEDs has become an important issue for LEDs.

US Patent Application Nos. 2004/0188696 and 2004/023189 (the division of 2004/0188696) respectively disclose a LED package structure and method using Surface Mount Technology (SMT), where each package structure contains a LED chip. Each LED chip is first adhered to a front side of a sub-mount by means of a bonding bump in the form of a flip chip. The wafer holder has an array of pre-cut holes and is filled with metal to form a via array. The electrodes of the wafer can be connected to the back side of the wafer holder with tin by the array of channels. This channel array can also be used as a heat dissipation path for the LED chip. After each LED chip is adhered to the sub substrate, the sub substrate is cut to perform subsequent LED packaging.

However, in the wafer holders in US Patent Application Nos. 2004/0188696 and 2004/023189, a via array filled with metal needs to be cut out, which increases the manufacturing cost. In addition, the step of adhering each LED chip to the wafer holder will also increase the complexity of fabrication. Therefore, if it can have a light-emitting diode, there is no need for a chip holder, and it has a good heat dissipation path, which can have advantages in the market.

The invention discloses a method for manufacturing a light-emitting device, which comprises the steps of: providing a first carrier plate having a plurality of first metal contacts; providing a substrate; forming a plurality of light-emitting stacks and a plurality of grooves on the substrate, wherein the plurality of The light emitting stack is separated from each other by a plurality of trenches; connecting the plurality of light emitting stacks with the first carrier board; forming a packaging material commonly located on the plurality of light emitting stacks; and cutting the first carrier board and the packaging material to form a plurality of crystal grains Light emitting element unit.

In one embodiment of the present invention, the method for manufacturing a light emitting device further includes forming a first wavelength conversion layer on a first light emitting stack. The first wavelength conversion layer converts light emitted by the first light emitting stack into a first light emitting stack. A light; forming a second wavelength conversion layer on a second light emitting stack, the second wavelength conversion layer converts the light emitted from the second light emitting stack into a second light; and providing a third light emitting stack, the first There is no wavelength conversion material above the three light-emitting stacks. The light emitted by the first, second, and third light-emitting stacks is blue, the first light is green, and the second light is red. Light.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings. In the drawings, the shape or thickness of the element can be enlarged or reduced. It is important to note that components not shown or described in the figures may be in a form known to those skilled in the art. The embodiments listed in the present invention are only used to illustrate the present invention and are not intended to limit the scope of the present invention. Any obvious modification or change made by anyone to the present invention will not depart from the spirit and scope of the present invention.

Referring to FIGS. 1A to 1E, it is a cross-sectional view corresponding to each stage of a method of manufacturing a light emitting device according to an embodiment of the present invention. In FIG. 1A, a light-emitting structure 100 is first formed, which includes a substrate 11, a first conductive layer 102 as a cladding layer, and an active layer 104 on the first conductive layer 102 as a light-emitting layer. A second conductive layer 106 is used as another cladding layer on the active layer 104. Preferably, as shown in FIG. 1A, one electrode or bonding pad 107 a is located on the exposed portion of the first conductive layer 102, and the other electrode or bonding pad 107 b is located on the second conductive layer 106. The materials (such as aluminum) and manufacturing methods of the electrodes or the bonding pads 107a and 107b should be well known to those skilled in the art, and will not be repeated here. In addition, in one embodiment, the light emitting structure 100 further includes a passivation layer 120 to protect the light emitting structure 100. The material (such as silicon dioxide) and manufacturing method of the protective layer 120 are also well known to those skilled in the art, and will not be described in detail here.

In one embodiment, the first conductive layer 102 is an n-type semiconductor conductive layer, and the second conductive layer 106 is a p-type semiconductor conductive layer. The n-type semiconductor conductive layer 102 and the p-type semiconductor conductive layer 106 are any conventional or visible semiconductor materials, preferably a III-V (three / five) group compound semiconductor, such as aluminum gallium indium (Al _x Ga _y ln _{( 1 - x - y )} N) or aluminum gallium indium phosphide (Al _x Ga _y In _{( 1-xy )} P), where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x ＋ y ≦ 1, and optionally further doped with p / n type dopants. The active layer 104 and the semiconductor material may also be used with the conventional structure, the material may be, for example, aluminum gallium indium nitride _{(AlxGayln (1 - x - y} ) N) or aluminum gallium indium phosphide _{(Al x Ga y ln (1} - x _{- y) P)} and the like, and the structure may be a single quantum well (single quantum well, SQW), multiple quantum well (multiple quantum well, MQW) and double heterostructure (double Heterosture, DH), which emission principle and mechanism system according to the prior Known technologies are not repeated here. In addition, the light emitting structure 100 may be processed by an organic metal chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, or a hydride vapor phase epitaxy (HVPE) process. Production.

Next, as shown in FIG. 1B, a first dielectric layer 122 is formed on the light emitting structure 100. Preferably, the first dielectric layer 122 is a transparent dielectric layer and has a thickness D ≦ 20 μm, thereby effectively conducting the heat generated by the light emitting structure 100. The material of the first dielectric layer 122 may be silicon dioxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), or a combination thereof, and it may be made by MOCVD or MBE.

After that, referring to FIG. 1C, a second dielectric layer 140 is formed on the first dielectric layer 122. The material of the second dielectric layer 140 may be one of silicon dioxide, silicon nitride, polyimide, BCB (bisbenzocyclobutene), and photoresist. Preferably, the thickness of the second dielectric layer 140 is about 25 μm, which is formed by a printing technique.

Referring to FIG. 1D, after the second dielectric layer 140 is formed, a metal layer 160 is formed. The metal layer 160 is located on the light emitting structure 100 and electrically contacts the first conductive layer 102, and part of the metal layer 160 is located on the first dielectric layer. 122; and forming a metal layer 162, the metal layer 162 is located on the light emitting structure 100 and electrically contacts the second conductive layer 106, and a part of the metal layer 162 is located on the first dielectric layer 122. The first dielectric layer 122 and the second dielectric layer 140 isolate the metal layer 160 and the metal layer 162. The material of the metal layer 160 or the metal layer 162 may be selected from gold (Au), aluminum (Al), silver (Ag), alloys thereof, or other conventional metals. Preferably, the metal layer 160 and the metal layer 162 are jointly formed by a printing technique or electroplating. Through the above steps, the light-emitting element 10 is completed.

In one embodiment, the first dielectric layer 122 is a transparent dielectric layer, and the contact surface between the first dielectric layer 122 and the metal layer 160 and / or the metal layer 162 is used for the light emitted by the reflective light-emitting structure 100, so that Effectively increase the light output intensity of the light emitting element 10. In addition, the metal layer 160 and / or the metal layer 162 also serve as a heat dissipation path of the light emitting structure 100. When the metal layer 160 and the metal layer 162 have large contact areas A1 and A2, it also contributes to effective and rapid heat dissipation.

Referring to FIG. 1E, after the structure shown in FIG. 1D is formed, the method for manufacturing the light-emitting element further includes a step of removing the substrate 11 to expose the first conductive layer 102. The substrate 11 may be, for example, a sapphire substrate or a gallium arsenide substrate. When the substrate 11 is a sapphire substrate, the substrate 11 can be removed by an excimer laser. An excimer laser can be a KrF standard with an energy of 400 millijoules per square centimeter (mJ / cm ² ), a wavelength of 248 nanometers, and a pulse width of 38 nanoseconds (ns). Molecular laser. At higher temperatures, such as 60 ° C., when an excimer laser is irradiated on the sapphire substrate, the sapphire substrate is removed to expose the first conductive layer 102. In addition, when the substrate 11 is a gallium arsenide substrate, a ratio of 1:35 ammonia water (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) or a ratio of 5: 3: 5 phosphoric acid A solution of (H ₃ PO ₄ ), hydrogen peroxide (H ₂ O ₂ ), and water can be used to remove the gallium arsenide substrate, thereby exposing the first conductive layer 102.

After the substrate 11 is removed, the method for manufacturing the light emitting device further includes roughening the surface 102 a of the first conductive layer 102. For example, when the first conductive layer 102 is an aluminum gallium indium (Al _x Ga _y ln _{( 1 - x - y )} N) layer, the surface 102a thereof may be roughened by an etching solution, and the etching solution may be, for example, hydroxide Potassium (KOH) solution. In addition, when the first conductive layer 102 is an Al _x Ga _y In _{( 1-xy )} P layer, a solution of hydrochloric acid (HCl) and phosphoric acid may be used to roughen the surface of the first conductive layer 102. 102a, the roughening time may be, for example, 15 seconds. The roughened surface 102a of the first conductive layer 102 can reduce the possibility of total reflection, thereby increasing the light extraction efficiency of the light emitting element.

The light-emitting element 10 shown in FIG. 1E and the light-emitting elements 10a, 10b, and 10c shown in FIG. 1D provide a sufficiently large contact area (preferably occupying at least a half of the cross-sectional area of the light-emitting element 10). The light-emitting elements 10a, 10b, The 10c series uses a solder 12 to directly connect to the circuit carrier board 13 without the need for processes such as die bonding and wire bonding. In one embodiment, the light-emitting element 10a emits red light (R), the light-emitting element 10b emits green light (G), and the light-emitting element 10c emits blue light (B). The three are respectively connected to the circuit substrate 13 for image display purposes. .

Referring to FIG. 2A to FIG. 2D, it is a cross-sectional view corresponding to each stage of a method of manufacturing a light-emitting element array according to an embodiment of the present invention. In FIG. 2A, a substrate 21 is first provided, such as a sapphire substrate, a gallium arsenide (GaAs) substrate, or other substrates known to those skilled in the art and combinations thereof. Next, a plurality of light emitting structures 200a, 200b, and 200c are formed on the substrate 21. For materials and manufacturing methods of the light-emitting structures 200a, 200b, and 200c, reference may be made to the light-emitting structure 100 in FIGS. 1A to 1D. Similarly, the light emitting structures 200a, 200b, and 200c can be processed by an organic metal chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, or a hydride vapor epitaxial growth (hydride vapor). phase epitaxy (HVPE).

Next, as shown in FIG. 2B, a dielectric layer 222a is formed on the light emitting structure 200a, a dielectric layer 222b is formed on the light emitting structure 200b, and a dielectric layer 222c is formed on the light emitting structure 200c. Preferably, like the dielectric layer 122 shown in FIG. 1B, the dielectric layers 222a, 222b, and 222c are a transparent dielectric layer, and the thickness D ≦ 20 μm, thereby effectively conducting the light emitting structures 200a, 200b, and 200c. The heat generated. The materials of the dielectric layers 222a, 222b, and 222c can be silicon dioxide, silicon nitride, or a combination thereof, and they can be made by MOCVD or MBE.

Then, referring to FIG. 2C, a dielectric layer 240a is formed on the dielectric layer 222a, a dielectric layer 240b is formed on the dielectric layer 222b, and a dielectric layer 240c is formed on the dielectric layer 222c. The materials of the dielectric layers 240a, 240b, and 240c may be selected from silicon dioxide, silicon nitride, polyimide, BCB (bisbenzocyclobutene), and photoresist. Preferably, as in the second dielectric layer 140 shown in FIG. 1C, the thicknesses of the dielectric layers 240a, 240b, and 240c are about 25 μm, respectively, and are formed by a printing technique. In one embodiment, a dielectric layer 280 is formed between the light-emitting structures 200a, 200b, and 200c, so as to electrically insulate the light-emitting elements 20a, 20b, and 20c (as shown in FIG. 2D). In this embodiment, the material of the dielectric layer 280 is the same as that of the dielectric layers 240a, 240b, and 240c, such as polyimide, and a process (such as a printing technology) is used with the dielectric layers 240a, 240b, and 240c Together. In another embodiment, the material of the dielectric layer 280 is different from the materials of the dielectric layers 240a, 240b, 240c, and is formed by different processes.

Referring to FIG. 2D, metal layers 260a, 260b, and 260c are formed; and metal layers 262a, 262b, and 262c are formed. The material of the metal layers 260a, 260b, 260c, 262a, 262b, and 262c may be selected from gold (Au), aluminum (Al), silver (Ag), or alloys thereof. Preferably, the metal layers 260a, 260b, 260c, 262a, 262b, and 262c are jointly formed by a printing technique or electroplating. Through the above steps, the light-emitting element array 20 having the light-emitting elements 20a, 20b, and 20c is completed.

As shown in FIG. 2E to FIG. 2F, in one embodiment, the light-emitting elements 20a, 20b, and 20c provide a sufficiently large contact area to be directly connected to the circuit carrier board 23 by using a solder 22. The substrate 21 is separated from the light-emitting element array 20, and the light-emitting element array 20 can be used for image display. For example, after the tin material 22 is directly connected to the light-emitting elements 20a, 20b, and 20c and the circuit substrate 23, the method for manufacturing the light-emitting element further includes a step of removing the substrate 21. The substrate 11 may be, for example, a sapphire substrate, and may be removed by an excimer laser. An excimer laser can be a KrF standard with an energy of 400 millijoules per square centimeter (mJ / cm ² ), a wavelength of 248 nanometers, and a pulse width of 38 nanoseconds (ns). Molecular laser. At a higher temperature, such as 60 ° C., when an excimer laser is irradiated on the sapphire substrate, the sapphire substrate is removed to expose the first conductive layer 102. In addition, when the substrate 11 is a gallium arsenide substrate, a ratio of 1:35 ammonia water (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ) or a ratio of 5: 3: 5 phosphoric acid A solution of (H ₃ PO ₄ ), hydrogen peroxide (H ₂ O ₂ ), and water can be used to remove the gallium arsenide substrate, thereby exposing the first conductive layer 102.

After the substrate 21 is removed, the manufacturing method of the light emitting device further includes roughening the surface 102 a of the first conductive layer 102. For example, when the first conductive layer 102 is an aluminum gallium indium (Al _x Ga _y ln _{( 1 - x - y )} N) layer, the surface 102a thereof may be roughened by an etching solution, and the etching solution may be, for example, hydroxide Potassium (KOH) solution. Further, when the first conductive layer 102 is an aluminum gallium indium phosphide _{(Al x Ga y In 1-} xy P) layer, a hydrochloric acid (HCl) and phosphoric acid solution may be used for surface roughening of the first conductive layer 102 is 102a, The roughening time may be, for example, 15 seconds. The roughened surface 102a of the first conductive layer 102 can reduce the possibility of total reflection, thereby increasing the light extraction efficiency of the light emitting element. In an embodiment, as shown in FIG. 2G, a transparent packaging material 24 is used to cover the light-emitting element array 20 including the light-emitting elements 20a, 20b, and 20c, and is connected to the circuit carrier board 23 to form a light-emitting element package 25. The transparent packaging material 24 can be, for example, epoxy resin or other suitable materials well known to those skilled in the art.

Referring to FIG. 3A to FIG. 3G, it is a cross-sectional view corresponding to each stage of a method of manufacturing a light-emitting device according to an embodiment of the present invention. Referring to FIG. 3A, a substrate 21 is provided, which is single crystal and includes sapphire, gallium arsenide, gallium nitride, or silicon; epitaxial growth of a first conductive layer 102 on the substrate 21, the first conductive layer 102 is As a cladding layer; epitaxial growth; an active layer 104 including a multiple quantum well (MQW) structure on the first conductive layer 102, wherein the active layer 104 serves as a light emitting layer; and epitaxial growth. The second conductive layer 106 is on the active layer 104, and the second conductive layer 106 is used as another cladding layer. Next, the first conductive layer 102, the active layer 104, and the second conductive layer 106 are etched to form a plurality of light-emitting stacks 101 separated from each other by a trench (not shown) on the substrate 21, and each light-emitting stack In 101, a part of the first conductive layer 102 is exposed. Next, a protection layer 120 is formed on each light-emitting stack 101, and the protection layer 120 covers part of the first conductive layer 102, part of the second conductive layer 106, and a sidewall of the light-emitting stack 101. Next, an electrode or a bonding pad 107a electrically connected to the first conductive layer 102 is disposed on the exposed portion of each first conductive layer 102, and one and a second conductive layer are disposed on each second conductive layer 106. 106 The electrode or bonding pad 107b electrically connected.

After that, referring to FIG. 3B, a reflective layer 221 is disposed on each protective layer 120, and a first dielectric layer 122 is formed on each protective layer 120 to cover the reflective layer 221. For the light emitted from the light-emitting stack 101, the reflective layer 221 has a reflectivity equal to or greater than 80%. The material of the reflective layer 221 includes a metal, such as silver, a silver alloy, aluminum, or an aluminum alloy. In one embodiment, the material of the reflective layer 221 includes a polymer mixed with inorganic particles. The inorganic particles are composed of a metal oxide or a material having a reflectance equal to or greater than 1.8. The material of the reflective layer 221 is, for example, An epoxy resin mixed with titanium oxide particles. Each reflective layer 221 is completely covered by a corresponding protective layer 120 and a first dielectric layer 122, thereby electrically insulating each reflective layer 221 and a corresponding light-emitting stack 101. In another embodiment, the protective layer 120 is omitted, and the reflective layer 221 is directly formed on the second conductive layer 106 and is electrically connected to the second conductive layer 106. Then, as shown in FIG. 3C, a second dielectric layer 240 is formed on the substrate 21, between the trenches, and on each light-emitting stack 101, and each second dielectric layer 240 exposes a corresponding electrode. Or bonding pad 107a and electrode or bonding pad 107b. Thereafter, a first metal layer 260 and a second metal layer 262 are formed between each second dielectric layer 240 and on a portion of the corresponding first dielectric layer 122. The first metal layer 260 and the second metal layer 262 are formed on the corresponding electrode or bonding pad 107a and the electrode or bonding pad 107b, respectively. The material of the first metal layer 260 and the second metal layer 262 includes gold, aluminum, silver, or an alloy thereof. In one embodiment, the first metal layer 260 and the second metal layer 262 are jointly formed by a printing technique or electroplating.

As shown in FIG. 3D, the second dielectric layer 240 located between adjacent light emitting stacks 101 is patterned to form a recess in the second dielectric layer 240. The recess exposes a part of the substrate 21 and the second The dielectric layers 240 are separated to form a dielectric layer 240a, and then an opaque layer 290 is formed in the groove. In an embodiment, the opaque layer 290 serves as a reflective layer or a light absorbing layer, thereby reflecting or absorbing the light emitted by the corresponding light emitting stack 101 and avoiding mutual influence by the light emitted by the adjacent light emitting stack 101. Or produce crosstalk. For the light emitted by the corresponding light-emitting stack 101, the opaque layer 290 has a transmission of less than 50%. The material of the opaque layer 290 includes a metal or a polymer mixed with inorganic particles. The inorganic particles are composed of a metal oxide or a material having a reflectance equal to or greater than 1.8. The material of the reflective layer 221 is, for example, An epoxy resin mixed with titanium oxide particles. So far, the light-emitting element array 30 including the plurality of light-emitting elements 300 is completed. As shown in FIG. 3E, a circuit carrier board 23 is provided, which includes a plurality of metal contacts 22 located on the upper and lower surfaces of the circuit carrier board 23 and a plurality of conductive channels 22 a penetrating the circuit carrier board 23. 22a may connect the metal contacts 22 on the upper surface of the circuit carrier board and the metal contacts 22 on the lower surface of the circuit carrier board. In one embodiment, the circuit board 23 includes a solder. The circuit board 23 includes FR-4, BT (Bismaleimide-Triazine) resin, ceramic, or glass. The thickness of the circuit board 23 is between 50 and 200 micrometers to sufficiently support the light emitting element and still have a small volume. The light-emitting element array 30 is directly connected to the circuit substrate 23 in a flip-chip manner by aligning the first metal layer 260 and the second metal layer 262 to the corresponding metal contacts 22 of each light-emitting element 300. It is worth noting that voids may be formed in areas other than the metal contacts 22 between the light-emitting element array 30 and the circuit substrate 23. In addition, the gap can be optionally filled with a filler material to improve the connection strength and mechanical support. After the light-emitting element array 30 and the circuit substrate 23 are connected, the base material 21 of the light-emitting element array 30 is removed. In an embodiment, the substrate includes sapphire, the light-emitting stack 101 includes gallium nitride, and the method of removing the substrate 21 includes a higher temperature, such as 60 ° C., and irradiating the first The interface between the conductive layer 102 and the substrate 21 is then separated from the substrate 21 and the first conductive layer 102. An excimer laser can be a KrF standard with an energy of 400 millijoules per square centimeter (mJ / cm ² ), a wavelength of 248 nanometers, and a pulse width of 38 nanoseconds (ns). Molecular laser. In another embodiment, when the substrate 21 is a gallium arsenide substrate, the method for removing the substrate 21 includes using a ratio of 1:35 ammonia water (NH ₄ OH) and hydrogen peroxide (H ₂ O ₂ ). Or a mixture of 5: 3: 5 phosphoric acid (H ₃ PO ₄ ), hydrogen peroxide (H ₂ O ₂ ) and water, so that the substrate 21 can be completely removed and each of them is exposed. The first conductive layer 102, the dielectric layer 240a, and the opaque layer 290 of the light emitting element 300.

As shown in FIG. 3F, after the substrate 21 is removed, the manufacturing method of the light emitting device further includes roughening the exposed surface of the first conductive layer 102. In one embodiment, the first conductive layer 102 includes aluminum gallium nitride (Al _x Ga _y ln _{( 1 - x - y )} N, where 0 ≦ x, y ≦ 0), and potassium hydroxide (KOH) may be used. The solution etches the exposed surface of the first conductive layer 102 to form a roughened surface 102a. In another embodiment, the first conductive layer 102 includes aluminum gallium indium phosphide (Al _x Ga _y In _{( 1 - x - y )} P). The first conductive layer may be etched using a solution of hydrochloric acid (HCl) or phosphoric acid. The exposed surface may be 102 to form a roughened surface 102a. The roughening time may be, for example, 15 seconds. The roughened surface 102a of each first conductive layer 102 can reduce the possibility of total reflection of light in each light emitting element 300, thereby increasing the light extraction efficiency of the light emitting element. After the roughening step, a plurality of recessed areas are located on the roughened surface 102a and are substantially surrounded by the dielectric layer 240a. In an embodiment, in order to form a grain-level red-green-blue light-emitting element unit for a display, the manufacturing method of this embodiment may selectively apply a first wavelength conversion layer 294 on the light-emitting element 300b to convert Light, as shown in Figure 3F. For example, the light-emitting stack 101 of the light-emitting element 300b emits blue light with a main wavelength between 430 nanometers and 470 nanometers. Red light between 690 nanometers. Further, a second wavelength conversion layer 296 can be selectively coated on the light-emitting element 300c to convert the light emitted by the light-emitting element 300c into a second converted light, for example, a light having a main wavelength between 500 nm and 500 nm. Green light between 570 nm. The light emitting element 300a is not coated with any wavelength conversion material to emit blue light directly from the roughened surface 102a of the light emitting element 300a. In one embodiment, the first or second wavelength conversion layer is formed by gathering nano-scale quantum dots or nano-scale phosphors to form a film having a substantially uniform thickness, and An adhesive layer (not shown) is connected to the light emitting stack 101. In another embodiment, the first or second wavelength conversion layer includes nanometer-level quantum dots or nanometer-level phosphors, and the average diameter or average characteristic length thereof is between 10 nm and 500 nm. between. The length or characteristic length of each nano-level quantum dot or nano-level phosphor is substantially less than 1000 nanometers. Nanoscale quantum dots include semiconductor materials, such as a group II-ⅤI (two / six) compound semiconductor with a composition of Zn _x Cd _y Mg _lxy Se, where x and y can be adjusted to make II-ⅤI (two / (F) Group compound semiconductors emit green or red light upon photoexcitation. "Feature length" is defined as the maximum distance between any two ends of a phosphor or a quantum dot. Thereafter, a transparent packaging material 24 such as epoxy resin or silicone is coated on the upper surface of the light-emitting element array 32 to fix the wavelength conversion material to the light-emitting stack 101 and used as the light-emitting element array 32. Optical lenses of the light emitting elements 300a, 300b, and 300c. In another embodiment, the materials of the wavelength conversion layers covering the light emitting elements 300a, 300b, and 300c are the same.

FIG. 4A is a plan view of the light-emitting element array 32 connected to the circuit substrate 23 in a flip-chip form as shown in FIG. 3F. Both the light emitting element array 32 and the circuit carrier board 23 are in the form of wafers having the same or similar dimensions. The light-emitting element array 32 includes a plurality of red-green-blue light-emitting element groups staggered and continuously arranged in a two-dimensional space, and each group includes a light-emitting element 300a and a light-emitting element 300b, as shown by a dotted circle in the figure. And a light emitting element 300c.

Finally, a dicing step is performed to simultaneously cut the light-emitting element array 32 and the circuit carrier board 23 to form a plurality of grain-level red-green-blue light-emitting element units 35 as shown in FIG. 3G, and each grain-level red-green-blue The light emitting element unit 35 includes a blue light emitting element 300a that emits blue light, a red light emitting element 300b that emits red light, and a green light emitting element 300c that emits green light. The die-level red-green-blue light-emitting element unit 35 is a device without a package and a surface-adhesive type, that is, after the cutting step, it can be directly bonded to a printed circuit carrier without the need for a traditional packaging step. . The transparent packaging material 24 collectively covers the light emitting elements 300a, 300b, and 300 and does not extend to the side walls of the light emitting elements 300a, 300b, and 300c. In one embodiment, the dicing step simultaneously cuts the light-emitting element array 32 and the circuit carrier board 23 to form a plurality of grain-level red-green-blue light-emitting element units, wherein each grain-level red-green-blue light-emitting element unit includes a plurality of Red green blue light emitting element group. The plurality of red-green-blue light-emitting element groups are arranged in an I * J array in a red-green-blue light-emitting element unit, where I and J are positive integers, and at least one of I and J is greater than 1. The ratio of I to J is preferably close to or equal to 1/1, 3/2, 4/3, or 16/9.

Referring to FIG. 4B, the red-green-blue light-emitting element unit 35, which is a grain level, includes a red-green-blue light-emitting element group as shown in FIG. 3G. The grain-level red-green-blue light-emitting element unit 35 is a first rectangle having a first long side and a first short side, wherein the first short side has a first width S1 and the first long side has a greater than A first length S2 of a width S1. Each light-emitting stack 101 is a second rectangle having a second long side and a second short side, wherein the second short side has a second width d1 and the second long side has a second width larger than the second width d1. Length d2. The second short side of the light-emitting stack 101 is substantially disposed on the first long side of the red-green-blue light-emitting element unit 35 parallel to the grain level or substantially on the red-green-blue light-emitting element unit 35 perpendicular to the grain level. First short side. In one embodiment, the red-green-blue light-emitting element unit 35 can be used as one pixel of an indoor display panel. In order for a TV display with a diagonal of 40 inches and a pixel resolution of 1024 * 768 to use all light-emitting element pixels, the area of each pixel needs to be less than about 0.64 square millimeters (mm ² ). Therefore, the area of the red-green-blue light-emitting element unit 35 may be, for example, less than 0.36 mm ² . The first length S2 and the first width S1 are both less than 0.6 mm, and the aspect ratio of the red-green-blue light-emitting element unit 35, that is, S2 / S1, is preferably less than 2/1. According to the disclosed embodiment, the distance between the first metal layer 260 and the second metal layer 262, that is, the first distance S3, is limited by the alignment control of the light-emitting element array and the circuit substrate in the connection step. . The first distance S3 is equal to or greater than 25 microns (micron) and less than 150 microns, thereby ensuring a process tolerance and providing a sufficient contact area for conducting. The distance between one edge of the red-green-blue light-emitting element unit 35 and one of the light-emitting stacks 101 of the red-green-blue light-emitting element unit 35, that is, the second distance S4, is limited by the tolerance of the cutting step. The second distance S4 is equal to or greater than 25 micrometers and less than 60 micrometers, thereby ensuring the tolerance of the cutting step and the advantage of maintaining a small volume. The distance between two adjacent light-emitting elements, that is, the third distance S5 is limited by the lithographic etching step, and is less than 50 microns, or preferably less than 25 microns, so that more of the light-emitting stack 101 is retained. area. For each light-emitting stack 101 in the red-green-blue light-emitting element unit 35, the second width d1 is between 20 and 150 microns and the second length d2 is between 20 and 550 microns. The ratio of the area of the red-green-blue light-emitting element unit 35 to the total area of the light-emitting stack 101 is less than 2 or between 1.1 and 2, and preferably between 1.2 and 1.8. The area of the light emitting stack 101 depends on the required brightness and pixel size. It is worth noting that the shape of the red-green-blue light-emitting element unit 35 may also be a square with four sides having the same width as the first width S1. In one embodiment, one pixel includes two red-green-blue light-emitting element units 35, one of which is used for normal operation and the other is used to prevent the red-green-blue light-emitting element unit 35 from malfunctioning. The first width S1 is preferably less than 0.3 mm, so that the two red-green-blue light-emitting element units 35 are disposed in one pixel. The advantage of the present invention is that the light emitting element can be implemented as a pixel element of a flat-screen television, and the resolution can be increased to twice or four times the pixel resolution of 1024 * 768. In another embodiment, a red-green-blue light-emitting element unit 35 includes two red-green-blue light-emitting element groups, one of which is used for normal operation, and the other is used for standby of the red-green-blue light-emitting element group. malfunction.

Referring to FIGS. 5A to 5C, it is a grain-level light-emitting element unit according to an embodiment of the present invention. The manufacturing method and structure are similar to the embodiments and related disclosures shown in FIGS. 3A to 3G. The difference is that before the cutting step, the light-emitting element array 34 includes a plurality of the same light-emitting elements 300d, as shown in FIG. 5A. Each light emitting element 300d is coated with the same or different wavelength conversion layer 298. The wavelength conversion layer 298 is used to convert light emitted from the light emitting stack 101 of the corresponding light emitting element 300d. For example, the main wavelength is between 430 nm and 470. The blue light between the nanometers is converted into yellow light, green light, or converted light from the light. 5B and 5C are a plan view and a cross-sectional view of a grain-level light-emitting element unit 36 including a single light-emitting element after the cutting step. The size of the grain-level light-emitting element unit 36 is similar to or the same as the size of the grain-level red-green-blue light-emitting element unit 35 shown in FIG. 4B. The die-level light-emitting element unit 36 is a first rectangle having a first long side and a first short side, wherein the first long side has a first length S1, and the first short side has a first length smaller than the first length S1.一 Width S6. Each light-emitting stack 101 is a second rectangle having a second long side and a second short side, wherein the second short side has a second width d1 and the second long side has a second width larger than the second width d1. Length d2. The second short side of the light-emitting stack 101 is substantially disposed on the first short side of the red-green-blue light-emitting element unit 36 parallel to the die level or substantially First long side. In one embodiment, the red-green-blue light-emitting element unit 36 is a part of the pixels used for an indoor display panel. The area of the red-green-blue light-emitting element unit 36 may be, for example, less than 0.12 mm ² . The first length S1 and the first width S6 are both less than 0.2 mm, and the aspect ratio of the red-green-blue light-emitting element unit 36, that is, S1 / S6, is preferably less than 2/1. According to the present invention, the distance between the first metal layer 260 and the second metal layer 262, that is, the first distance S3, is limited by the alignment control of the light emitting element array and the circuit substrate in the connection step. The first distance S3 is equal to or greater than 25 micrometers and less than 150 micrometers to ensure a process tolerance and provide a sufficient contact area for conducting. The distance between one edge of the red-green-blue light-emitting element unit 36 and its light-emitting stack 101, that is, the second distance S4, is limited by the tolerance of the cutting step. The second distance S4 is equal to or greater than 25 micrometers and less than 60 micrometers, thereby ensuring the tolerance of the cutting step and the advantage of maintaining a small volume. For the light-emitting stack 101 in the grain-level red-green-blue light-emitting element unit 36, the second width d1 is between 20 and 150 microns and the second length d2 is between 20 and 550 microns. The ratio of the area of the grain-level red-green-blue light-emitting element unit 36 to the total area of the light-emitting stack 101 is less than 2 or between 1.1 and 2, and preferably between 1.2 and 1.8. The area of the light emitting stack 101 depends on the required brightness and pixel size. It is worth noting that the shape of the red-green-blue light-emitting element unit 36 may be a square with four sides having the same width as the first width S6. Similarly, the shape of the light-emitting stack 101 may be a square whose four sides are the same as the second width d1. In one embodiment, a pixel includes at least three grain-level red-green-blue light-emitting element units 36 to emit blue, red, and green light.

Referring to FIGS. 5D to 5E, it is a grain-level light-emitting element unit according to an embodiment of the present invention. The manufacturing method and structure are similar to the embodiments and related disclosures shown in FIGS. 5A to 5C. The difference is that the opaque layer 290 can be selectively omitted. The red-green-blue light-emitting element unit 36 'is directly adhered to a light plate included in a lamp. The area of the light emitting stack 101 depends on the required brightness and the size of the light plate or lamp. For applications such as less than 0.3 watts of low power, the area of the light emitting element RGB unit 36 'of the light emitting stack 101 is based 100mil ² to 200mil ^2, for example, in a power range between 0.3 to 0.9 watts In terms of application, the area of the light-emitting stack 101 of the red-green-blue light-emitting element unit 36 ′ is 201 mil ² to 900 mil ^2. For high-power applications such as higher than 0.9 watts, the red-green-blue light-emitting element unit 36 The area of the light-emitting stack 101 is greater than 900 mil ² . The dielectric layer 240 a surrounding the light-emitting stack 101 can serve as a coupling lens for extracting light from the light-emitting element unit 36 ′ at the grain level. The ratio of the area of the die-level light-emitting element unit 36 ′ to the area of the light-emitting stack 101 is equal to or greater than 9, and preferably equal to or greater than 15, so as to have better light extraction efficiency and light dispersion. In the present invention, the distance between the first metal layer 260 and the second metal layer 262, that is, the first distance S3 ′, is limited by the alignment control of the light-emitting element array and the circuit substrate in the connection step. The first distance S3 'is equal to or greater than 25 micrometers and less than 150 micrometers, thereby ensuring a process tolerance and providing a sufficient contact area for conducting. It is worth noting that the shape of the light-emitting element unit 36 ′ at the grain level may be a square with four sides having the same width as the first width S6 ′. Similarly, the shape of the light-emitting stack 101 may be a square with four sides having the same width as the second width d1 ′. The first width S6 'is the same as the second width d1' or is three times larger than the second width d1 '. Preferably, the first width S6' is the same as the second width d1 'or larger than the fourth width d1'. So that the light-emitting element unit 36 'at the grain level has better light extraction efficiency. In an example, the dielectric layer has different thicknesses on the sidewalls of the light-emitting stack 101, so the first ratio (S6 '/ d1') of the first width S6 'and the second width d1' is different from the first length S1 The second ratio (S1 '/ d2') to the second length d2 'is such that during operation, the grain-level light-emitting element unit 36' is viewed from the bottom, and it has an asymmetric light field characteristic. In addition, the first ratio is at least twice the second ratio, or preferably four times the second ratio.

6A is a cross-sectional view of a grain-level red-green-blue light-emitting element unit 65 according to an embodiment of the present invention. The manufacturing method and structure are similar to the embodiments shown in FIGS. 3A to 3G and related The disclosure is similar, except that a filling material 680 fills the gap between the light-emitting element array 32 'including the light-emitting elements 300a', 300b ', and 300c' and the circuit carrier board 23, thereby improving the connection strength between the two And provide a current path between the circuit board and the light emitting element. The filling material 680 includes an anisotropic conductive film (ACF), which has a vertical path for conducting current between the light-emitting element array 32 ′ and the circuit substrate 23 and between the light-emitting element array 32 ′ and the circuit substrate 23. Ability to insulate current with a lateral path parallel to the light emitting element array 32 'or the circuit carrier board. The filling material 680 is coated on the circuit carrier board 23 before connecting the light emitting element array to the circuit carrier board 23. In one embodiment, neither the first metal layer 260 'nor the second metal layer 262' contacts the metal contact 22 of the circuit carrier board 23. The filling material 680 is located between the first metal layer 260 ', the second metal layer 262', and the metal contact 22, thereby conducting current between the first metal layer 260 ', the second metal layer 262', and the metal contact 22. Since the first metal layer 260 'and the second metal layer 262' are patterned, the surface facing the metal contact 22 is a roughened surface having a plurality of concave portions and convex portions. Therefore, the contact area between the light-emitting element array and the circuit substrate increases, and the connection strength of the light-emitting element array and the circuit substrate also increases. The plurality of concave portions and convex portions have a regular shape or an irregular shape, and the surface roughness (Ra) is between 0.5 and 5 microns. The advantage of using the anisotropic conductive adhesive as the filling material is that the distance between the first metal layer 260 'and the second metal layer 262', that is, the first distance S3 as shown in FIG. 4B, can be less than 25 microns.

Fig. 6B is a schematic diagram of a single light-emitting element 300d 'in the light-emitting element array 32' shown in Fig. 6A. The filling material 680 and the patterned surfaces of the first metal layer 260 'and the second metal layer 262' can also be applied to the embodiments shown in Figs. 5A to 5C to form the structure shown in Fig. 6B. . The filling material 680 fills the gap between the light emitting element 300d 'and the circuit carrier board 23 to improve the connection strength between the two and provide a current path between the circuit carrier board and the light emitting element. The filling material 680 includes an anisotropic conductive film (ACF), which has a vertical path for conducting current between the light-emitting element 300d 'and the circuit substrate 23 and a parallel between the light-emitting element 300d' and the circuit substrate 23 The ability to insulate current in the lateral path of the light emitting element 300d 'or the circuit board. The filling material 680 is coated on the circuit carrier board 23 before connecting the light emitting element array to the circuit carrier board 23. In one embodiment, neither the first metal layer 260 'nor the second metal layer 262' contacts the metal contact 22 of the circuit carrier board 23. The filler material 680 is located between the first metal layer 260 ', the second metal layer 262', and the metal contact 22, thereby conducting a current between the first metal layer 260 ', the second metal layer 262', and the metal contact 22. Since the first metal layer 260 'and the second metal layer 262' are patterned, there are a plurality of concave portions and convex portions on the surface facing the metal contact 22. Therefore, the contact area between the light emitting element and the circuit carrier board is increased, and the connection strength between the light emitting element and the circuit carrier board is also improved. The plurality of concave portions and convex portions have a regular shape or an irregular shape, and the surface roughness (Ra) is between 0.5 and 5 microns. Similarly, the filling material 680 and the patterned surfaces of the first metal layer 260 'and the second metal layer 262' can also be applied to the embodiment shown in FIG. 5E to form the structure shown in FIG. 6C. .

7A to 7G are cross-sectional views corresponding to each stage of a method for manufacturing a light-emitting device according to an embodiment of the present invention. The steps and structures of FIGS. 7A to 7D are the same as FIG. 2A to FIG. The embodiment shown in FIG. 2D and related disclosure are similar. The steps and structures of FIGS. 7F to 7G are similar to the embodiment shown in FIGS. 3E to 3F and related disclosure. The difference is that: As shown in FIG. 7C, the dielectric layers 240a, 240b, 240c, and 280 are a photoresist, such as a positive photoresist or a negative photoresist; as shown in FIGS. 7D to 7E, a metal is formed. After the layers 260a, 260b, and 260c and the metal layers 262a, 262b, and 262c are formed, the manufacturing method further includes removing the dielectric layers 240a, 240b, 240c, and 280, so that a gap is formed between two adjacent light-emitting elements and Between the metal layers of a single light-emitting element; as shown in FIGS. 7F to 7G, after removing the substrate 21, two adjacent light-emitting elements are separated from each other by a gap, and the manufacturing method further includes roughening. The exposed surface of the first conductive layer 102 forms a roughened surface 10 2a, the coarsening method is as described above, and is not repeated here. In an embodiment, in order to form a chip-scale red-green-blue light-emitting element for display or illumination, a manufacturing method thereof may selectively coat a first wavelength conversion layer on the light-emitting element 300b. 294. As shown in FIG. 7G, the light emitted from the light emitting element 300b is converted into a first converted light. Further, a second wavelength conversion layer 296 may be selectively coated on the light emitting element 300c, so as to convert the light emitted by the light emitting element 300c into a second converted light. The light emitting element 300a is not coated with any wavelength conversion material to emit blue light directly from the roughened surface 102a of the light emitting element 300a. The formation method and material of each conversion layer are as described above, and are not repeated here. FIG. 7H is a top view of a red-green-blue-light-emitting element unit at a grain level according to an embodiment of the present invention including a red-green-blue light-emitting element group as shown in FIG. 7G; a first width of the red-green-blue light-emitting element unit 37; S1, the first length S2, the second length d2, the first distance S3, the second distance S4, the second width d1, and the third distance S5 are as described in the embodiment shown in FIG. 4B and the related disclosure, here No need to go into details, the difference is that the light emitting stack 101 is not surrounded by the dielectric layer 240a and the opaque layer 290. After the first wavelength conversion layer 294 and the second wavelength conversion layer 296 are formed, the transparent packaging material 24 of the foregoing embodiment is not coated, and a dicing step is directly performed to directly cut the circuit carrier board 23 without cutting and emitting light. The element array 32 forms red-green-blue light-emitting element units of a plurality of crystal grain levels. 7I and 7J are a cross-sectional view and a top view of a grain-level light-emitting element unit 37 including a single light-emitting element after the cutting step. The embodiment of the first length S1, the first width S6, the second width d1, the second length d2, the first distance S3, and the second distance S4 of the die-level light-emitting element unit 37 and related disclosure are shown in FIG. 5B. The content is not repeated here. The difference is that the sidewalls of the light-emitting stack 101, the first metal layer 260, and the second metal layer 262 do not have the dielectric layer 240a and the opaque layer 290. In addition, There is no transparent packaging material 24 on the wavelength conversion layer 298.

Referring to FIG. 8A, a display module 76 according to an embodiment of the present invention includes a plurality of grain-level red-green-blue light-emitting element units 65 located on a second circuit carrier board 73. For example, any two adjacent red-green-blue light-emitting element units 65 at the grain level are separated from each other by a pitch or are arranged seamlessly so that the two are in contact with each other. The second circuit carrier board 73 includes a circuit 72, which is electrically connected to each light-emitting element of the red-green-blue light-emitting element unit 65, thereby independently controlling the blue, red, and green light-emitting elements in each of the red-green-blue light-emitting element units 65. . In an embodiment, the display module 76 includes M columns and N rows of grain-level red-green-blue light-emitting element units 65 for a display with X * Y pixel resolution, where M / N = 1/1 , 3/2, 4/3, or 16/9, X = a * M, Y = b * N, and a and b are positive integers equal to or greater than 2. The display module 76 includes more than 500 red-green-blue light-emitting element units 65 in one square inch. That is, the display module 76 includes more than 1500 light-emitting stacks 101 in a square inch area. In another embodiment, the red-green-blue light-emitting element units of each die level include a plurality of red-green-blue light-emitting element groups, and each group includes a blue light-emitting element and a red light-emitting element as described above. And a green light emitting element. The plurality of red-green-blue light-emitting element groups are arranged in a grain-level red-green-blue light-emitting element unit in an I * J array, where I and J are positive integers, and at least one of I and J is greater than 1. The ratio of I to J is preferably close to or equal to 1/1, 3/2, 4/3, or 16/9. In a grain-level red-green-blue light-emitting element unit, the distance between two adjacent light-emitting stacks from two adjacent red-green-blue light-emitting element groups is substantially equal to that from two adjacent The distance between two adjacent light-emitting stacks of a red-green-blue light-emitting element unit of a grain level. The display module 76 includes M-row and N-row grain-level red-green-blue light-emitting element units 65 for a display with X * Y pixel resolution, where M / N = 1/1, 3/2, 4 / 3 or 16/9, X = a * M * I, Y = b * N * J, and a and b are positive integers equal to or greater than 2. The display module 76 includes more than 500 red-green-blue light-emitting element groups in an area of one square inch. That is, the display module 76 includes more than 1500 light-emitting stacks 101 in a square inch area. Each of the red-green-blue light-emitting element units and each of the red-green-blue light-emitting element units can be independently driven by a circuit formed on the circuit carrier board 23 and the second circuit carrier board 73. Material classes of the second circuit carrier board 73 are also FR-4, BT (Bismaleimide-Triazine) resin, ceramic, or glass. FIG. 8B is a schematic diagram of a lighting module 78 according to an embodiment of the present invention. The lighting module 78 includes a plurality of die-level light-emitting element units 66 located on the second circuit carrier board 73. Depending on the applied driving voltage, the die-level light-emitting element units 66 may be connected in series or in parallel through the circuits on the second circuit carrier board 73. In one embodiment, the lighting module 78 is disposed in a light bulb 80 as shown in FIG. 9. The light bulb 80 further includes an optical lens 82 covering the lighting module 78, a heat dissipation groove 85 having a connection surface and the lighting module 78 is located on the connection surface, a connection portion 87 connected to the heat dissipation groove 85, and a connection portion 87 is an electrical connector 88 connected to and electrically connected to the lighting module 78.

The above-mentioned embodiments are only for explaining the technical ideas and characteristics of the present invention. The purpose is to enable those skilled in the art to understand the contents of the present invention and implement them accordingly. When the scope of the patent of the present invention cannot be limited, That is, any equivalent changes or modifications made in accordance with the spirit disclosed in the present invention should still be covered by the patent scope of the present invention.

100, 200a, 200b, and 200c‧‧‧ light-emitting structures

11, 21‧‧‧ substrate

102‧‧‧first conductive layer

104‧‧‧active layer

106‧‧‧Second conductive layer

107a, 107b‧‧‧ electrode or bonding pad

120‧‧‧ protective layer

122‧‧‧first dielectric layer

140, 240‧‧‧Second dielectric layer

222a, 222b, 222c, 240a, 240b, 240c, 280‧‧‧ Dielectric layers

160, 260a, 260b, 260c, 162, 262a, 262b, 262c‧‧‧ metal layer

20, 30, 32, 32 ’‧‧‧ light emitting element array

21‧‧‧ substrate

22‧‧‧ Tin

13, 23‧‧‧Circuit Carrier Board

24‧‧‧ transparent packaging material

25‧‧‧Light emitting element package

10, 10a, 10b, 10c, 20a, 20b, 20c, 300, 300a, 300b, 300c, 300d, 300a ’, 300b’, 300c ’, 300d’ ‧‧‧ light-emitting element

102a‧‧‧ surface

101‧‧‧light emitting stack

221‧‧‧Reflective layer

260、260’‧‧‧first metal layer

262, 262’‧‧‧ second metal layer

290‧‧‧opaque layer

22‧‧‧ metal contact

22a‧‧‧ conductive channel

294‧‧‧first wavelength conversion layer

296‧‧‧Second wavelength conversion layer

35, 36, 36 ’, 65, 66, 37‧‧‧ red, green and blue light emitting element units

S1, S6’‧‧‧ first width

S2‧‧‧first length

d1, d1’‧‧‧ second width

d2‧‧‧second length

S3, S3’‧‧‧ the first distance

S4‧‧‧Second Distance

S5‧‧‧ Third distance

298‧‧‧wavelength conversion layer

S1‧‧‧first length

S6‧‧‧first width

680‧‧‧filler

76‧‧‧Display Module

73‧‧‧Second circuit carrier board

72‧‧‧circuit

78‧‧‧lighting module

80‧‧‧ bulb

82‧‧‧optical lens

85‧‧‧heat sink

87‧‧‧Connection Department

88‧‧‧electrical connector

1A to 1E are schematic diagrams of a method for manufacturing a light emitting device according to an embodiment of the present invention;

FIG. 1F is a schematic diagram of an application of a light emitting element according to an embodiment of the present invention;

2A to 2D are schematic diagrams of a method for manufacturing a light emitting element array according to an embodiment of the present invention;

FIG. 2E is a schematic diagram showing the connection between a light emitting element array and a circuit board according to an embodiment of the present invention;

FIG. 2F is a schematic diagram of a light emitting element array having a first conductive layer with a roughened surface according to an embodiment of the present invention;

Figure 2G is a schematic diagram of a package of a light emitting element array according to an embodiment of the present invention;

FIG. 3A to FIG. 3G are cross-sectional views corresponding to each stage of a method of manufacturing a light-emitting device according to an embodiment of the present invention;

FIG. 4A is a top view of the light-emitting element array shown in FIG. 3F connected to a circuit substrate in the form of a flip chip;

FIG. 4B is a top view of a grain-level red-green-blue light-emitting element unit including a red-green-blue light-emitting element group shown in FIG. 3G according to an embodiment of the present invention; FIG.

FIG. 5A is a top view of a light-emitting element array connected to a circuit carrier board in the form of a flip chip according to an embodiment of the present invention; FIG.

FIG. 5B is a top view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention; FIG.

FIG. 5C is a cross-sectional view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention; FIG.

FIG. 5D is a top view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention; FIG.

FIG. 5E is a cross-sectional view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention; FIG.

FIG. 6A is a cross-sectional view of a grain-level red-green-blue light-emitting element unit according to an embodiment of the present invention;

FIG. 6B is a schematic diagram of a single light-emitting element in the light-emitting element array shown in FIG. 6A; FIG.

FIG. 6C is a schematic diagram of a single light-emitting element in a light-emitting element array according to an embodiment of the present invention; FIG.

7A to 7G are cross-sectional views corresponding to each stage of a manufacturing method process of a light-emitting device according to an embodiment of the present invention;

FIG. 7H is a top view of a grain-level red-green-blue light-emitting element unit including a red-green-blue light-emitting element group shown in FIG. 7G according to an embodiment of the present invention; FIG.

FIG. 7I is a cross-sectional view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention; FIG.

FIG. 7J is a top view of a grain-level light-emitting element unit of a single light-emitting element according to an embodiment of the present invention; FIG.

FIG. 8A is a schematic diagram of a display module according to an embodiment of the present invention; FIG.

FIG. 8B is a schematic diagram of a display module according to an embodiment of the present invention; and

FIG. 9 is an exploded view of a light bulb element according to an embodiment of the present invention.

Claims (10)

A light-emitting element includes: a first semiconductor conductive layer; a second semiconductor conductive layer; an active layer between the first semiconductor conductive layer and the second semiconductor conductive layer; a second electrode located on the second semiconductor conductive layer Layer, and is electrically connected to the second semiconductor conductive layer; a first metal layer is electrically connected to the first semiconductor conductive layer; a second metal layer covers the second electrode and is in contact with the second semiconductor conductive layer For electrical connection, the second metal layer includes a first portion, a second portion on the first portion, and a third portion on the second portion; and a dielectric layer on the first metal Between the layer and the second metal layer, an upper surface is substantially coplanar with the first metal layer and the second metal layer; wherein the light emitting element has a roughened upper surface, and the roughened upper surface and the The second electrode is located on the opposite side of the active layer, and the roughened upper surface is not covered by sapphire, wherein at least two of the first portion, the second portion, and the third portion have different widths from each other, and the third portion section A width greater than the width of the second electrode. The light-emitting device according to claim 1, further comprising a first electrode located on the first semiconductor conductive layer and electrically connected to the first semiconductor conductive layer. The light-emitting device according to claim 2, wherein the first metal layer covers the first electrode, and a maximum width of the first metal layer is larger than a maximum width of the first electrode. The light-emitting device according to claim 1, wherein the dielectric layer directly contacts a sidewall of the first metal layer and the second metal layer. The light-emitting element according to claim 1, further comprising a packaging material covering the roughened upper surface. The light-emitting element according to claim 1, further comprising a protective layer between the second metal layer and the second semiconductor conductive layer, and covering the second semiconductor conductive layer and the sidewall of the active layer. The light-emitting element according to claim 6, further comprising a reflective layer on the protective layer. The light-emitting element according to claim 1, further comprising a wavelength conversion layer covering the roughened upper surface. The light-emitting element according to claim 8, wherein the material of the wavelength conversion layer includes quantum dots. The light-emitting element according to claim 8, further comprising a transparent packaging material covering the wavelength conversion layer.