CN104659162A - Light emitting device and manufacture method thereof - Google Patents
Light emitting device and manufacture method thereof Download PDFInfo
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- CN104659162A CN104659162A CN201410663642.XA CN201410663642A CN104659162A CN 104659162 A CN104659162 A CN 104659162A CN 201410663642 A CN201410663642 A CN 201410663642A CN 104659162 A CN104659162 A CN 104659162A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
Abstract
The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units.
Description
Technical field
The present invention relates to a kind of light-emitting component and preparation method thereof and a kind of light-emitting device array and preparation method thereof, particularly relate to a kind of light-emitting device and preparation method thereof.
Background technology
Existing light-emitting diode (LED) encapsulation technology is first at chip carrier (sub-mount) upper some glue, again light-emitting diode chip for backlight unit is fixed on chip carrier, and then forming a light-emitting diode, this step is called die bond (Die Bonding).Crystal-bonding adhesive material is mainly elargol or other non-conductive epoxy resins of tool conductivity.Afterwards light-emitting diode is combined on circuit board.The light-emitting diode of upside-down mounting (flip chip) formula makes p-type semiconductor conductive layer in diode structure and n-type semiconductor conductive layer, be exposed to the same side, by cathode and anode electrode fabrication on the same side of diode structure, thus directly the light emitting diode construction being provided with cathode and anode electrode can be covered and to be placed on a tin material (solder).So, the demand adopting conventional metals bracing wire (wire bonding) can be exempted.But existing flip-over type light-emitting diode still needs, by encapsulation step such as cutting, die bonds, to link with circuit board.Therefore, if the electrode of flip-over type light-emitting diode has enough large contact area, just existing encapsulation step can be omitted.
The operating current of general traditional LED is about tens of to hundreds of milliamperes (mA), but brightness is often not enough to deal with needed for general lighting.If combine a large amount of LED to improve brightness, then increase causes the competitiveness on market to reduce by the volume of LED illumination element.Therefore, promote the tube core brightness of single LEDs, become inevitable trend.But, when LED develops towards high brightness, the operating current of single LED and power increase to the several times of traditional LED to hundreds of times, such as, the operating current of the LED of a high brightness is about hundreds of milliampere to several ampere, and the heat problem that LED is produced can not be ignored.The performance of LED can reduce because of " heat ", and such as thermal effect can affect the emission wavelength of LED, and characteristic of semiconductor also Yin Re and produce brightness decay, even causes component wear time more serious.Therefore, how high-capacity LED dispels the heat becomes the important issue of LED.
A kind of use surface mount technology (Surface Mount Technology is disclosed respectively in U.S. Patent Application No. 2004/0188696 and 2004/023189 (being the segmented speech of 2004/0188696), SMT) LED encapsulation structure and method, wherein each encapsulating structure contains a LED chip.Each LED chip, first with the form of upside-down mounting, is attached on the front side (front side) of a chip carrier (sub-mount) by projection (bonding bump).There is the opening array dug out in advance in chip carrier, and fill out with metal to form channel array (via array).The electrode of this chip is connected to the rear side (back side) with tin material of chip carrier by this channel array.This channel array also can be used as the heat dissipation path of LED chip.After each LED chip sticks together with time substrate, then by secondary substrate cut, to carry out follow-up LED.
But the chip carrier in U.S. Patent Application No. 2004/0188696 and 2004/023189, need dig out and fill out with the channel array of metal (via array), increase manufacture craft cost.In addition, each LED chip is attached to the step of chip carrier, also can increase the complexity of making.Therefore, if a kind of light-emitting diode can be had, do not need chip carrier, also there is good heat dissipation path, commercially can have advantage.
Summary of the invention
The present invention discloses a kind of manufacture method of light-emitting device, and it comprises step: provide one first support plate, and it has multiple first Metal Contact; One base material is provided; Form multiple luminous lamination and multiple groove on base material, wherein multiple luminous lamination is by multiple groove and separated from one another; Connect multiple luminous lamination and the first support plate; Forming an encapsulating material is co-located on multiple luminous lamination; And cutting the first support plate and encapsulating material to form the light-emitting device unit of multiple die-level.
In one embodiment of the invention, the manufacture method of light-emitting device also comprises formation one first wave length conversion layer on one first luminous lamination, and the light that the first luminous lamination sends is converted to one first light by first wave length conversion layer; Form a second wave length conversion layer on one second luminous lamination, the light that the second luminous lamination sends is converted to one second light by second wave length conversion layer; And a 3rd luminous lamination is provided, there is not any material for transformation of wave length the top of the 3rd luminous lamination, and the light that wherein the first luminous lamination, the second luminous lamination and the 3rd luminous lamination send is blue light, and the first light is green glow and the second light is ruddiness.
Accompanying drawing explanation
Figure 1A to Fig. 1 D is the schematic diagram of the LED production method of the embodiment of the present invention;
Fig. 1 E and Fig. 1 F is respectively the application schematic diagram of the light-emitting diode of the embodiment of the present invention;
Fig. 2 A to Fig. 2 D is the schematic diagram of the light emitting diode matrix manufacture method of the embodiment of the present invention;
Fig. 2 E is the schematic diagram that the light emitting diode matrix of the embodiment of the present invention and circuit board link;
Fig. 2 F and Fig. 2 G is the encapsulation schematic diagram of the light emitting diode matrix of the embodiment of the present invention;
The cutaway view corresponding to manufacture method flow process each stage of the light-emitting device that Fig. 3 A to Fig. 3 G is the embodiment of the present invention;
Fig. 4 A is the vertical view that light-emitting device array is as illustrated in Figure 3 F connected with circuit board with the form of upside-down mounting;
Fig. 4 B is the vertical view that the RGB light-emitting device unit of the die-level of the embodiment of the present invention comprises RGB light-emitting component group as shown in Figure 3 G;
Fig. 5 A is the vertical view that the light-emitting device array of the embodiment of the present invention is connected with circuit board with the form of upside-down mounting;
Fig. 5 B is the vertical view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention;
Fig. 5 C is the cutaway view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention;
Fig. 5 D is the vertical view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention;
Fig. 5 E is the cutaway view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention;
Fig. 6 A is the cutaway view of the RGB light-emitting device unit of the die-level of the embodiment of the present invention
Fig. 6 B is the schematic diagram of single light-emitting component in the light-emitting device array shown in Fig. 6 A;
Fig. 6 C is the schematic diagram of single light-emitting component in the light-emitting device array of the embodiment of the present invention;
The cutaway view corresponding to manufacture method flow process each stage of a kind of light-emitting device that Fig. 7 A to Fig. 7 G is the embodiment of the present invention;
Fig. 7 H is the vertical view that the RGB light-emitting device unit of the die-level of the embodiment of the present invention comprises RGB light-emitting component group as shown in Figure 7 G;
Fig. 7 I is the cutaway view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention;
Fig. 7 J is the vertical view of the light-emitting device unit of the die-level of the single light-emitting component of the embodiment of the present invention;
Fig. 8 A is the schematic diagram of the display module of the embodiment of the present invention;
Fig. 8 B is the schematic diagram of the display module of the embodiment of the present invention; And
Fig. 9 is the bulb element exploded view of the embodiment of the present invention.
Symbol description
Ray structure ... 100,200a, 200b and 200c
Base material ... 11,21
First conductive layer ... 102
Active layer ... 104
Second conductive layer ... 106
Electrode or joint sheet ... 107a, 107b
Protective layer ... 120
First dielectric layer ... 122
Second dielectric layer ... 140,240
Dielectric layer ... 222a, 222b, 222c, 240a, 240b, 240c, 280
Metal level ... 160,260a, 260b, 260c, 162,262a, 262b, 262c
Light-emitting device array ... 20,30,32,32 '
Base material ... 21
Tin material ... 22
Circuit board ... 13,23
Transparent encapsulation material ... 24
Light-emitting element package ... 25
Light-emitting component ... 10,10a, 10b, 10c, 20a, 20b, 20c, 300,300a, 300b, 300c, 300d, 300a ', 300b ', 300c ', 300d '
Surface ... 102a
Luminous lamination ... 101
Reflector ... 221
The first metal layer ... 260,260 '
Second metal level ... 262,262 '
Light non-transmittable layers ... 290
Metal Contact ... 22
Conductive channel ... 22a
First wave length conversion layer ... 294
Second wave length conversion layer ... 296
RGB light-emitting device unit ... 35,36,36 ', 65,66,37
First width ... S1, S6 '
First length ... S2
Second width ... d1, d1 '
Second length ... d2
First distance ... S3, S3 '
Second distance ... S4
3rd distance ... S5
Wavelength conversion layer ... 298
First length ... S1
First width ... S6
Packing material ... 680
Display module ... 76
Second circuit support plate ... 73
Circuit ... 72
Lighting module ... 78
Bulb ... 80
Optical lens ... 82
Radiating groove ... 85
Linking part ... 87
Electric connector ... 88
Embodiment
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and the accompanying drawing appended by coordinating is described in detail below.In the accompanying drawings, the shape of element or thickness can expand or reduce.Needing it is specifically intended that the element that do not illustrate in figure or describe, can be the form known to person skilled in the art scholar.Each embodiment cited by the present invention only in order to the present invention to be described, and is not used to limit the scope of the invention.Anyone any aobvious and easy to know modification made for the present invention or change neither depart from spirit of the present invention and scope.
With reference to Figure 1A to Fig. 1 E, it is the cutaway view corresponding to manufacture method flow process each stage of a kind of light-emitting component according to the embodiment of the present invention.In figure ia, first form a ray structure 100, its comprise base material 11,1 first conductive layer 102 be positioned at as a coating layer, an active layer 104 on first conductive layer 102 using as a luminescent layer, one second conductive layer 106 on this active layer 104 using as another coating layer.Preferably, as shown in Figure 1A, an electrode or joint sheet (bonding pad) 107a are positioned in the part of the exposure of the first conductive layer 102, and another electrode or joint sheet 107b position are on the second conductive layer 106.Material (such as aluminium) and the manufacture method of electrode or joint sheet 107a and 107b should be to be practised known by this operator, does not add repeat at this.In addition, in one embodiment, ray structure 100 also comprises a protective layer (passivation layer) 120, to protect this ray structure 100.The material (such as silicon dioxide) of this protective layer 120 also for practising known by this operator with manufacture method, adds at this and does not repeat.
In one embodiment, the first conductive layer 102 is a n-type semiconductor conductive layer, and the second conductive layer 106 is a p-type semiconductor conductive layer.N-type semiconductor conductive layer 102, p-type semiconductor conductive layer 106 be any existing or future in the semi-conducting material of visible person, preferred person is III-V (three/five) compound semiconductor, such as aluminum indium gallium nitride (Al
xga
yln
(1-x-y)or AlGaInP (Al N)
xga
yin
(1-x-y)p), wherein 0≤x≤1,0≤y≤1,0≤x+y≤1, and optionally further adulterate by p/n type admixture.And active layer 104 also can use existing semi-conducting material and structure, such as material can be aluminum indium gallium nitride (Al
xga
yln
(1-x-y)or AlGaInP (Al N)
xga
yln
(1-x-y)p) etc., and structure can be single quantum well (Single Quantum Well, SQW), multiple quantum trap (Multiple Quantum Well, MQW) with two heterogeneous (Double Heterosture, DH), its principle of luminosity and mechanism are existing technology, do not repeat them here.In addition, ray structure 100 is by Metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy growth (molecular beam epitaxy, MBE) making such as manufacture craft or hydride gas-phase epitaxy growth (hydride vapor phase epitaxy, HVPE) manufacture craft.
Then, as shown in Figure 1B, one first dielectric layer 122 is formed on this ray structure 100.Preferably, the first dielectric layer 122 is a transparent dielectric layer, and its thickness D≤20 μm, effectively conduct the heat that ray structure 100 produces thus.The material of the first dielectric layer 122 can be silicon dioxide (SiO
2), silicon nitride (Si
3n
4) or its combination, and it makes by MOCVD or MBE.
Afterwards, see Fig. 1 C, form one second dielectric layer 140 on the first dielectric layer 122.The material of the second dielectric layer 140 can be in silicon dioxide, silicon nitride, pi (polyimide), BCB (bisbenzocyclobutene) and photoresist (photoresist) selects one.Preferably, the thickness of the second dielectric layer 140 about 25 μm, is formed by a printing technology.
See Fig. 1 D, after the second dielectric layer 140 is formed, form metal level 160, metal level 160 to be positioned on ray structure 100 and the first conductive layer 102 in electrical contact, and the metal level 160 of part is positioned on the first dielectric layer 122; And forming metal level 162, metal level 162 to be positioned on ray structure 100 and the second conductive layer 106 in electrical contact, and the metal level 162 of part is positioned on the first dielectric layer 122.Wherein, the first dielectric layer 122 and the second dielectric layer 140 completely cut off metal level 160 and metal level 162.The material of metal level 160 or metal level 162 can be selected from gold (Au), aluminium (Al), silver (Ag), its etc. alloy, or other existing metals.Preferably, metal level 160 and metal level 162 are formed jointly by a printing technology or plating.Via above-mentioned steps, namely complete light-emitting component 10.
In one embodiment, the first dielectric layer 122 is a transparent dielectric layer, and the light that the contact-making surface of the first dielectric layer 122 and metal level 160 and/or metal level 162 sends for Refl-Luminous structure 100, thus effectively can promote the light output intensity of light-emitting component 10.In addition, metal level 160 and/or metal level 162, also as the heat dissipation path of ray structure 100, when metal level 160 and metal level 162 have larger contact area A1, A2, also contribute to effectively and dispel the heat fast.
See Fig. 1 E, formed as after the structure shown in Fig. 1 D, the manufacture method of light-emitting component also comprises the step that removes base material 11, for exposing the first conductive layer 102.Base material 11 can be such as a sapphire substrate or GaAs base material.When base material 11 is sapphire substrate, remove base material 11 by excimer laser (excimer laser).Excimer laser can be that one to have energy be 400 millijoules/square centimeter (mJ/cm
2), KrF (KrF) excimer laser of wavelength to be 248 nanometers and pulse duration (pulse width) be 38 how seconds (ns).In higher temperature, such as 60 DEG C, when excimer laser irradiation is on sapphire substrate, sapphire substrate is removed to expose the first conductive layer 102.In addition, when base material 11 is GaAs base material, a ratio is the ammoniacal liquor (NH of 1:35
4oH) with hydrogen peroxide (H
2o
2) solution or a ratio is the phosphoric acid (H of 5:3:5
3pO
4), hydrogen peroxide (H
2o
2) may be used for removing GaAs base material, for exposing the first conductive layer 102 with the solution of water.
After removing base material 11, the manufacture method of light-emitting component also comprises the surperficial 102a of alligatoring first conductive layer 102.Such as, when the first conductive layer 102 is an aluminum indium gallium nitride (Al
xga
yln
(1-x-y)n) layer, its surperficial 102a can pass through etching solution alligatoring, and etching solution can be such as potassium hydroxide (KOH) solution.In addition, when the first conductive layer 102 is an AlGaInP (Al
xga
yin
(1-x-y)p) layer, the solution of a hydrochloric acid (HCl) and phosphoric acid can be used for the surperficial 102a of alligatoring first conductive layer 102, and coarsening time can be such as 15 seconds.The coarse surface 102a of the first conductive layer 102 can reduce the possibility that total reflection occurs, for increasing the light extraction efficiency of light-emitting component.
Light-emitting component 10 shown in Fig. 1 F and light-emitting component 10a, 10b, the 10c shown in Fig. 1 D provide enough large contact area (preferably at least occupying the half of light-emitting component 10 sectional area), light-emitting component 10a, 10b, 10c utilize tin material (solder) 12 to be directly connected with circuit board 13, and do not need the processes such as die bond (Die Bonding) and metal bracing wire (Wire Bonding).In one embodiment, light-emitting component 10a sends ruddiness (R), light-emitting component 10b sends green glow (G), light-emitting component 10c sends blue light (B), and three is connected the purposes for image display with circuit board 13 respectively.
With reference to Fig. 2 A to Fig. 2 D, it is the cutaway view corresponding to manufacture method flow process each stage of a kind of light-emitting device array according to the embodiment of the present invention.In fig. 2, first provide a base material 21, such as a sapphire (Sapphire) base material, GaAs (GaAs) base material or other practise base material known by this operator and its combination.Then, base material 21 forms multiple ray structure 200a, 200b and 200c.Ray structure 200a, 200b, can referring to figs. 1A to the ray structure 100 of Fig. 1 D with the material of 200c and manufacture method.Similarly, ray structure 200a, 200b, to grow up (molecular beam epitaxy by Metalorganic chemical vapor deposition (MOCVD) manufacture craft, molecular beam epitaxy with 200c, MBE) making such as manufacture craft or hydride gas-phase epitaxy growth (hydride vapor phase epitaxy, HVPE) manufacture craft.
Then, as shown in Figure 2 B, formed a dielectric layer 222a on ray structure 200a, formed a dielectric layer 222b on ray structure 200b, form a dielectric layer 222c on ray structure 200c.Preferably, as the dielectric layer 122 shown in Figure 1B, dielectric layer 222a, 222b, 222c are a transparent dielectric layer, and its thickness D≤20 μm, effectively conduct the heat that ray structure 200a, 200b, 200c produce thus.The material of dielectric layer 222a, 222b, 222c can be silicon dioxide, silicon nitride or its etc. combination, and it makes by MOCVD or MBE.
Afterwards, see Fig. 2 C, formed dielectric layer 240a in dielectric layer 222a on, formed dielectric layer 240b on dielectric layer 222b, formation dielectric layer 240c is on dielectric layer 222c.The material of dielectric layer 240a, 240b, 240c can be in silicon dioxide, silicon nitride, pi (polyimide), BCB (bisbenzocyclobutene) and photoresist agent (photoresist) selects one.Preferably, as the dielectric layer the 2 140 shown in Fig. 1 C, the thickness of dielectric layer 240a, 240b, 240c is about 25 μm respectively, and is formed by a printing technology.In one embodiment, between ray structure 200a, 200b, 200c, more form a dielectric layer 280, for electric insulation light-emitting component 20a, 20b, with 20c (as shown in Figure 2 D).In this embodiment, the material of dielectric layer 280 is identical with the material of dielectric layer 240a, 240b, 240c, such as pi, and utilizes a manufacture craft (such as a printing technology) and dielectric layer 240a, 240b, 240c jointly to be formed.In another embodiment, the material of dielectric layer 280 is different from the material of dielectric layer 240a, 240b, 240c, and is formed by different manufacture craft.
See Fig. 2 D, form metal level 260a, 260b, 260c; And form metal level 262a, 262b, 262c.Metal level 260a, 260b, 260c, 262a, 262b, can be selected from the material of 262c gold (Au), aluminium (Al), silver (Ag) or its etc. alloy.Preferably, metal level 260a, 260b, 260c, 262a, 262b, jointly formed by a printing technology or plating with 262c.Via above-mentioned steps, namely complete have light-emitting component 20a, 20b, with the light-emitting device array 20 of 20c.
As shown in Fig. 2 E to Fig. 2 F, in one embodiment, light-emitting component 20a, 20b, with 20c enough large contact area is provided, be directly connected with circuit board 23 to utilize tin material (solder) 22.Make base material 21 be separated with light-emitting device array 20 again, light-emitting device array 20 just can be used as the use of image display.Such as, utilize tin material 22 directly connect light-emitting component 20a, 20b, with 20c and circuit board 23 after, the manufacture method of light-emitting component also comprises the step that removes base material 21.Base material 11 can be such as a sapphire substrate, and removes by excimer laser (excimer laser).Excimer laser can be that one to have energy be 400 millijoules/square centimeter (mJ/cm
2), KrF (KrF) excimer laser of wavelength to be 248 nanometers and pulse duration (pulsewidth) be 38 how seconds (ns).In higher temperature, such as 60 DEG C, when excimer laser irradiation is on sapphire substrate, sapphire substrate is just removed to expose the first conductive layer 102.In addition, when base material 11 is GaAs base material, a ratio is the ammoniacal liquor (NH of 1:35
4oH) with hydrogen peroxide (H
2o
2) solution or a ratio is the phosphoric acid (H of 5:3:5
3pO
4), hydrogen peroxide (H
2o
2) can be used for removing GaAs base material, for exposing the first conductive layer 102 with the solution of water.
After removing base material 21, the manufacture method of light-emitting device also comprises the surperficial 102a of alligatoring first conductive layer 102.Such as, when the first conductive layer 102 is an aluminum indium gallium nitride (Al
xga
yln
(1-x-y)n) layer, its surperficial 102a can pass through etching solution alligatoring, and etching solution can be such as potassium hydroxide (KOH) solution.In addition, when the first conductive layer 102 is an AlGaInP (Al
xga
yin
1-x-yp) layer, the solution of a hydrochloric acid (HCl) and phosphoric acid can be used for the surperficial 102a of alligatoring first conductive layer 102, and coarsening time can be such as 15 seconds.The coarse surface 102a of the first conductive layer 102 can reduce the possibility that total reflection occurs, for increasing the light extraction efficiency of light-emitting component.In one embodiment, as shown in Figure 2 G, one transparent encapsulation material 24 is for coatedly comprising light-emitting component 20a, 20b, with the light-emitting device array 20 of 20c and connecting circuit support plate 23, and then form light-emitting element package 25, wherein transparent encapsulation material 24 can applicable material such as epoxy resin or other prior art persons known by.
With reference to Fig. 3 A to Fig. 3 G, it is the cutaway view corresponding to manufacture method flow process each stage of a kind of light-emitting device according to the embodiment of the present invention.See Fig. 3 A, provide a base material 21, it is monocrystalline and comprises sapphire, GaAs, gallium nitride or silicon; Epitaxial growth one first conductive layer 102 is on base material 21, and the first conductive layer 102 is as a coating layer; Epitaxial growth one comprises the active layer 104 of multiple quantum trap (Multiple QuantumWell, MQW) structure on the first conductive layer 102, and wherein active layer 104 is as a luminescent layer; And epitaxial growth one second conductive layer 106 is on active layer 104, wherein the second conductive layer 106 is as another coating layer.Then, etch the first conductive layer 102, active layer 104 and the second conductive layer 106 to form multiple luminous lamination 101 separated from one another by groove (figure do not mark) on base material 21, and in each luminous lamination 101, the first conductive layer 102 of a part exposes.Then, each luminous lamination 101 is formed with a protective layer 120, and the first conductive layer 102 of protective layer 120 cover part, the second conductive layer 106 of part and a sidewall of luminous lamination 101.Then, the electrode be electrically connected with the first conductive layer 102 or a joint sheet 107a is set on the naked position of each the first conductive layer 102, and the electrode be electrically connected with the second conductive layer 106 or a joint sheet 107b is set on each second conductive layer 106.
Afterwards, see Fig. 3 B, each protective layer 120 arranges a reflector 221, and on each protective layer 120, form the first dielectric layer 122 that covers reflector 221.For the light that luminous lamination 101 sends, reflector 221 has the reflectivity that is equal to or is greater than 80%.The material in reflector 221 comprises metal, such as silver, silver alloy, aluminum or aluminum alloy.In one embodiment, the material in reflector 221 comprises the macromolecule being mixed with inorganic particulate, wherein inorganic particulate is made up of metal oxide or equals or the material being greater than 1.8 forms by having reflectivity, and the material in reflector 221 is such as being mixed with the epoxy resin of Titanium particles.Each reflector 221 is fully covered by each self-corresponding protective layer 120 and the first dielectric layer 122, for each reflector of electric insulation 221 and each self-corresponding luminous lamination 101.In another embodiment, protective layer 120 is omitted, and reflector 221 is directly formed on the second conductive layer 106 and is electrically connected the second conductive layer 106.Afterwards, as shown in Figure 3 C, form one second dielectric layer 240 on base material 21 and between groove and on each luminous lamination 101, and each second dielectric layer 240 exposes each self-corresponding electrode or joint sheet 107a and electrode or joint sheet 107b.Afterwards, between each second dielectric layer 240 and on the first dielectric layer 122 of the correspondence of part, the first metal layer 260 and one second metal level 262 is formed.The first metal layer 260 and the second metal level 262 are formed on corresponding electrode or joint sheet 107a and electrode or joint sheet 107b respectively.The material of the first metal layer 260 and the second metal level 262 comprise gold, aluminium, silver or its etc. alloy.In one embodiment, the first metal layer 260 and the second metal level 262 are formed jointly by a printing technology or plating.
As shown in Figure 3 D, second dielectric layer 240 of patterning between adjacent luminous lamination 101 for forming groove in the second dielectric layer 240, groove exposes the base material 21 of a part and is separated to form dielectric layer 240a by the second dielectric layer 240, forms a light non-transmittable layers 290 afterwards in groove.In one embodiment, light non-transmittable layers 290 as a reflector or a light absorbing zone, for reflecting or absorb light that corresponding luminous lamination 101 sends and avoiding being interacted by the light that the luminous lamination 101 be close to sends or producing crosstalk (crosstalk).For the light that the luminous lamination 101 of correspondence sends, light non-transmittable layers 290 has a penetrance (transmittance) being less than 50%.The material of light non-transmittable layers 290 comprises metal or comprises the macromolecule being mixed with inorganic particulate, wherein inorganic particulate is made up of metal oxide or equals or the material being greater than 1.8 forms by having reflectivity, and the material in reflector 221 is such as being mixed with the epoxy resin of Titanium particles.So far, the light-emitting device array 30 comprising multiple light-emitting component 300 completes.As shown in FIGURE 3 E, one circuit board 23 is provided, it includes and is multiplely positioned at the upper surface of circuit board 23 and the Metal Contact 22 of lower surface and includes multiple conductive channel 22a running through circuit board 23, and wherein conductive channel 22a can connect the Metal Contact 22 be positioned on the upper surface of circuit board and the Metal Contact 22 be positioned on the lower surface of circuit board.In one embodiment, circuit board 23 comprises tin material (solder).Circuit board 23 comprises FR-4, BT (Bismaleimide-Triazine) resin, pottery or glass.The thickness of circuit board 23 between 50 to 200 microns enough to support light-emitting component and still to there is small size.Light-emitting device array 30 is directly connected with circuit board 23 with the form of upside-down mounting to corresponding Metal Contact 22 with the second metal level 262 by the first metal layer 260 aiming at each light-emitting component 300.It should be noted that the region between light-emitting device array 30 and circuit board 23 beyond Metal Contact 22 may be formed with space.Optionally be filled in space with packing material to promote strength of connection and mechanical support in addition.After connecting light-emitting device array 30 and circuit board 23, remove the base material 21 of light-emitting device array 30.In one embodiment, base material comprises sapphire, and luminous lamination 101 comprises gallium nitride, and the method removing base material 21 is contained in higher temperature, such as 60 DEG C, an excimer laser is used to be radiated at the interface of the first conductive layer 102 and base material 21, then separation substrate 21 and the first conductive layer 102.Excimer laser can be that one to have energy be 400 millijoules/square centimeter (mJ/cm
2), KrF (KrF) excimer laser of wavelength to be 248 nanometers and pulse duration (pulse width) be 38 how seconds (ns).In another embodiment, when base material 21 is GaAs base material, the method removing base material 21 comprises the ammoniacal liquor (NH that use one ratio is 1:35
4oH) with hydrogen peroxide (H
2o
2) mixture or a ratio is the phosphoric acid (H of 5:3:5
3pO
4), hydrogen peroxide (H
2o
2) can fully remove base material 21 with the mixture of water for being etched to and exposing the first conductive layer 102 of each light-emitting component 300, dielectric layer 240a and light non-transmittable layers 290.
As illustrated in Figure 3 F, after removing base material 21, the manufacture method of light-emitting device also comprises the surface of the exposure of alligatoring first conductive layer 102.In one embodiment, the first conductive layer 102 comprises aluminum indium gallium nitride (Al
xga
yln
(1-x-y)n, wherein 0≤x, y≤0), the surface that potassium hydroxide (KOH) solution etches first conductive layer 102 can be used to expose is to form a coarse surface 102a.In another embodiment, the first conductive layer 102 comprises AlGaInP (Al
xga
yin
(1-x-y)p), the surface of hydrochloric acid (HCl) or the exposure of the solution etches of phosphoric acid first conductive layer 102 can be used to form a coarse surface 102a, and coarsening time can be such as 15 seconds.The coarse surface 102a of each the first conductive layer 102 can reduce the possibility of the light generation total reflection in each light-emitting component 300, for increasing the light extraction efficiency of light-emitting component.After roughening step, multiple sunk area be positioned at coarse surface 102a and in fact by dielectric layer 240a around.In one embodiment, in order to form one for the RGB light-emitting device unit of the die-level of display, the manufacture method of the present embodiment optionally on light-emitting component 300b coating one first wave length conversion layer 294 with convert light, as illustrated in Figure 3 F.Such as, the luminous lamination 101 of light-emitting component 300b, the blue light of its main wavelength sent between 430 nanometer to 470 nanometers, is converted into the first convert light, such as, be one to have the ruddiness of main wavelength between 610 nanometer to 690 nanometers.Further, a second wave length conversion layer 296 is optionally coated on light-emitting component 300c and is converted to one second convert light for the light sent by light-emitting component 300c, such as, be one to have the green glow of main wavelength between 500 nanometer to 570 nanometers.Light-emitting component 300a uncoated any material for transformation of wave length, send blue light with the coarse surface 102a of direct self-emission device 300a.In one embodiment, first or second wave length conversion layer by assembling nano level quantum dot (quantum dot) or nano level fluorescent material has the consistent film of thickness essence to form, and be linked to luminous lamination 101 by a gluing layer (not shown).In another embodiment, first or second wave length conversion layer comprise there is nano level quantum dot or nano level fluorescent material, its average diameter or average feature length are between 10 nanometer to 500 nanometers.Length or the characteristic length of each nano level quantum dot or nano level fluorescent material are less than in fact 1000 nanometers.Nano level quantum dot comprises semi-conducting material, and such as one has and consists of Zn
xcd
ymg
l-x-yiI-V I (two/six) compound semiconductor of Se, wherein x and y sends green or ruddiness after can being tuned as and making the optical excitation of II-V I (two/six) compound semiconductor." characteristic length " is defined as the ultimate range of appointing between two-end-point of a fluorescent material or a quantum dot.Afterwards, such as will coat the upper surface of light-emitting device array 32 material for transformation of wave length to be fixed on luminous lamination 101 for epoxy resin or the transparent encapsulation material 24 of silica resin (silicone), and the optical lens of light-emitting component 300a, 300b, 300c as light-emitting device array 32.In another embodiment, the material of the wavelength conversion layer of covering luminous element 300a, 300b, 300c is identical.
Fig. 4 A is the vertical view that light-emitting device array 32 is as illustrated in Figure 3 F connected with circuit board 23 with the form of upside-down mounting.Both light-emitting device array 32 and circuit board 23 are for having the wafer format of identical or similar size.Light-emitting device array 32 is contained in two-dimensional space and interlocks and the multiple RGB light-emitting component groups arranged continuously, and shown in the position enclosed as dotted line in figure, each group comprises a light-emitting component 300a, a light-emitting component 300b and light-emitting component 300c.
Finally, perform cutting (dicing) step and cut light-emitting device array 32 and circuit board 23 simultaneously, form the RGB light-emitting device unit 35 of multiple die-level as shown in Figure 3 G, the RGB light-emitting device unit 35 of each die-level comprises the green luminousing element 300c that red light-emitting component 300b and that a blue light emitting device 300a, sending blue light sends ruddiness sends green glow.The RGB light-emitting device unit 35 of die-level is a kind of containing encapsulation and be a kind of device of SMD LED surface-mount device LED, that is, after the cutting step, do not need traditional encapsulation step can directly with a printed circuit carrier plate gluing.Transparent encapsulation material 24 jointly covering luminous element 300a, 300b and 300 and do not extend to the sidewall of light-emitting component 300a, 300b and 300c.In one embodiment, cutting (dicing) step cuts light-emitting device array 32 and circuit board 23 to form the RGB light-emitting device unit of multiple die-level simultaneously, and wherein the RGB light-emitting device unit of each die-level comprises multiple RGB light-emitting component group.Multiple RGB light-emitting component group is with I*J arrayed in a RGB light-emitting device unit, and wherein I and J is positive integer, and at least one in I and J be greater than 1.The ratio of I and J is preferably close to or equals 1/1,3/2,4/3 or 16/9.
With reference to Fig. 4 B, the RGB light-emitting device unit 35 for die-level comprises RGB light-emitting component group as shown in Figure 3 G.The RGB light-emitting device unit 35 of die-level is the first rectangle for having one first long limit and one first minor face, and wherein the first minor face has one first width S 1 and the first long limit has the first length S2 that is greater than the first width S 1.Each luminous lamination 101 is for having the second rectangle of one second long limit and one second minor face, and wherein the second minor face has one second width d1 and the second long limit has the second length d2 that is greater than the second width d1.Second minor face of luminous lamination 101 is arranged in fact the first long limit of the RGB light-emitting device unit 35 being parallel to die-level or is arranged in fact the first minor face of the RGB light-emitting device unit 35 perpendicular to die-level.In one embodiment, RGB light-emitting device unit 35 can be used as a pixel of indoor display panel.Be 40 inches and the TV display that pixel resolution is 1024*768 all uses light-emitting component pixel to make to have diagonal, the area of each pixel need be less than about 0.64 square millimeter of (mm
2).Therefore, the area of RGB light-emitting device unit 35 can such as being less than 0.36mm2.First length S2 and the first width S 1 are all less than 0.6 millimeter, and the length-width ratio of RGB light-emitting device unit 35, that is S2/S1, be preferably less than 2/1.Embodiment disclosed by the present invention, the distance between the first metal layer 260 and the second metal level 262, that is the first distance S3, be limited to light-emitting device array and the contraposition of circuit board in Connection Step controls.First distance S3 equals or is greater than 25 microns (micron) and is less than 150 microns, for guaranteeing manufacture craft tolerance and providing enough as the contact area of conduction.A wherein edge of RGB light-emitting device unit 35 and the distance wherein between a luminous lamination 101 of RGB light-emitting device unit 35, that is second distance S4, be limited to the tolerance of cutting step.Second distance S4 equals or is greater than 25 microns and is less than 60 microns, for guaranteeing the tolerance of cutting step and maintaining the advantage of small size.Distance between two adjacent light emitting element, that is the 3rd distance S5 is limited to photolithographic etching step, and be less than 50 microns, or be preferably less than 25 microns, for retaining more area between luminous lamination 101.For each luminous lamination 101 in RGB light-emitting device unit 35, the second width d1 between 20 to 150 microns and the second length d2 between 20 to 550 microns.The ratio of the area of RGB light-emitting device unit 35 and the gross area of luminous lamination 101 is less than 2 or between 1.1 to 2, and preferably between 1.2 to 1.8.The area of luminous lamination 101 depends on required brightness and Pixel Dimensions.It should be noted that the shape of RGB light-emitting device unit 35 also can be all identical with the first width S 1 square in four limits.In an embodiment, a pixel comprises two RGB light-emitting device unit 35, and one of them is for normal running, another for for subsequent use in case RGB light-emitting device unit 35 fault of normal running.First width S 1 is preferably less than 0.3 millimeter, is arranged in a pixel for making two RGB light-emitting device unit 35.The invention has the advantages that, the pixel element of light-emitting component as a flat-surface television can be realized, and resolution more can be promoted to twice or four times that pixel resolution is 1024*768.In another embodiment, a RGB light-emitting device unit 35 comprises two RGB light-emitting component groups, and one of them is for normal running, another for for subsequent use in case the RGB light-emitting component group fault of normal running.
With reference to Fig. 5 A to Fig. 5 C, for the light-emitting device unit of a kind of die-level according to the embodiment of the present invention, its manufacture method and the embodiment shown in structure to Fig. 3 A to Fig. 3 G and relevant disclosure similar, different places is, before cutting step, light-emitting device array 34 comprises multiple identical light-emitting component 300d, as shown in Figure 5A.Each light-emitting component 300d is coated with identical or different wavelength conversion layer 298, the light that wavelength conversion layer 298 sends for the luminous lamination 101 changing corresponding light-emitting component 300d, such as, the blue light of main wavelength between 430 nanometer to 470 nanometers is converted to gold-tinted, green glow or the convert light from light.With reference to Fig. 5 B and Fig. 5 C, after cutting step, comprise vertical view and the cutaway view of the light-emitting device unit 36 of the die-level of single light-emitting component.The size of the size of the light-emitting device unit 36 of die-level and the RGB light-emitting device unit 35 of the die-level shown in Fig. 4 B is similar or identical.The light-emitting device unit 36 of die-level is for having the first rectangle of one first long limit and one first minor face, and wherein the first long limit has the first length S1, and the first minor face has the first width S 6 being less than the first length S1.Each luminous lamination 101 is for having the second rectangle of one second long limit and one second minor face, and wherein the second minor face has one second width d1 and the second long limit has the second length d2 that is greater than the second width d1.Second minor face of luminous lamination 101 is arranged in fact the first minor face of the RGB light-emitting device unit 36 being parallel to die-level or is arranged in fact the first long limit of the RGB light-emitting device unit 36 perpendicular to die-level.In an embodiment, RGB light-emitting device unit 36 be for an indoor display panel pixel wherein a part.The area of RGB light-emitting device unit 36 can such as being less than 0.12mm
2.First length S1 and the first width S 6 are all less than 0.2 millimeter, and the length-width ratio of RGB light-emitting device unit 36, that is S1/S6, be preferably less than 2/1.According to the present invention, the distance between the first metal layer 260 and the second metal level 262, that is the first distance S3, be limited to light-emitting device array and the contraposition of circuit board in Connection Step controls.First distance S3 equals or is greater than 25 microns and is less than 150 microns, to guarantee manufacture craft tolerance and to provide enough as the contact area of conduction.Distance between a wherein edge of RGB light-emitting device unit 36 and its luminous lamination 101, that is second distance S4, be limited to the tolerance of cutting step.Second distance S4 equals or is greater than 25 microns and is less than 60 microns, for guaranteeing the tolerance of cutting step and maintaining the advantage of small size.For the luminous lamination 101 in the RGB light-emitting device unit 36 of die-level, the second width d1 between 20 to 150 microns and the second length d2 between 20 to 550 microns.The area of the RGB light-emitting device unit 36 of die-level and the total area ratio of luminous lamination 101 are less than 2 or between 1.1 to 2, and preferably between 1.2 to 1.8.The area of luminous lamination 101 depends on required brightness and Pixel Dimensions.It should be noted that the shape of RGB light-emitting device unit 36 also can be all identical with the first width S 6 square in four limits.Similar, the shape of luminous lamination 101 also can be all identical with the second width d1 square in four limits.In an embodiment, a pixel comprises the RGB light-emitting device unit 36 of at least three die-level, for sending indigo plant, red and green glow.
With reference to Fig. 5 D to Fig. 5 E, for the light-emitting device unit of a kind of die-level according to the embodiment of the present invention, its manufacture method and the embodiment shown in structure to Fig. 5 A to Fig. 5 C and relevant disclosure similar, different places is, light non-transmittable layers 290 is optionally omitted.RGB light-emitting device unit 36 ' is the tabula rasa that direct surface is attached to that is contained in a light fixture.The area of luminous lamination 101 depends on the size of required brightness and tabula rasa or light fixture.For the lower powered application being such as less than 0.3 watt, the area of the luminous lamination 101 of RGB light-emitting device unit 36 ' is 100mil
2to 200mil
2, for the application of power in such as between 0.3 to 0.9 watt, the area of the luminous lamination 101 of RGB light-emitting device unit 36 ' is 201mil
2to 900mil
2, for such as higher than for the high-power application of 0.9 watt, the area of the luminous lamination 101 of RGB light-emitting device unit 36 ' is greater than 900mil
2.Dielectric layer 240a around luminous lamination 101 can be used as the coupled lens (coupling lens) of the light-emitting device unit 36 ' of light being taken out die-level.The ratio of the area of the light-emitting device unit 36 ' of die-level and the area of luminous lamination 101 is equal to or greater than 9, and is preferably equal to or greater than 15, for having preferred light extraction efficiency and light dispersiveness.In the present invention, the distance between the first metal layer 260 and the second metal level 262, that is the first distance S3 ', be limited to light-emitting device array and the contraposition of circuit board in Connection Step controls.First distance S3 ' equals or is greater than 25 microns and is less than 150 microns, for guaranteeing manufacture craft tolerance and providing enough as the contact area of conduction.It should be noted that the shape of the light-emitting device unit 36 ' of die-level also can be all identical with the first width S 6 ' square in four limits.Same, the shape of luminous lamination 101 also can be all identical with the second width d1 ' square in four limits.First width S 6 ' is identical with the second width d1 ' or be greater than three times of the second width d1 ', preferably, first width S 6 ' is identical with the second width d1 ' or be greater than four times of the second width d1 ', has preferred light extraction efficiency to make the light-emitting device unit 36 ' of die-level.In an example, dielectric layer has not identical thickness in the sidewall of luminous lamination 101, therefore first ratio (S6 '/d1 ') of the first width S 6 ' and the second width d1 ' is different from second ratio (S1 '/d2 ') of the first length S1 ' and the second length d2 ', to reach in time operating, overlook the light-emitting device unit 36 ' of die-level, it has the characteristic of asymmetric light field.In addition, the first ratio is at least the twice of the second ratio, or is preferably four times of the second ratio.
With reference to Fig. 6 A, for the cutaway view of the RGB light-emitting device unit 65 of the die-level according to the embodiment of the present invention, its manufacture method and the embodiment shown in structure to Fig. 3 A to Fig. 3 G and relevant disclosure similar, different places is, one packing material 680 is filled in the space between light-emitting device array 32 ' and circuit board 23 comprising light-emitting component 300a ', 300b ' and 300c ', for improving both bonding strengths and providing current path between circuit board and light-emitting component.Packing material 680 comprises different side's conducting resinl (anisotropic conductive film, ACF), its have between light-emitting device array 32 ' and circuit board 23 with vertical-path conduction current and between light-emitting device array 32 ' and circuit board 23 to be parallel to the ability of the transverse path insulation current of light-emitting device array 32 ' or circuit board.Packing material 680 was coated on circuit board 23 before connection light-emitting device array to circuit board 23.In an embodiment, the Metal Contact 22 of the first metal layer 260 ' and all non-contact circuit support plate 23 of the second metal level 262 '.Packing material 680 is positioned at the first metal layer 260 ', between the second metal level 262 ' and Metal Contact 22, for conduction current between the first metal layer 260 ', the second metal level 262 ' and Metal Contact 22.The first metal layer 260 ' and the second metal level 262 ' patterned, be therefore a coarse surface with multiple recess and protuberance in the face of the surface of Metal Contact 22.Therefore the contact area of light-emitting device array and circuit board increases, and the bonding strength of light-emitting device array and circuit board also promotes.Multiple recess and protuberance have regular shape or irregularly shaped, and surface roughness (Ra) is between 0.5 to 5 micron.Use different side's conducting resinl as packing material advantage be between the first metal layer 260 ' and the second metal level 262 ' distance, i.e. the first distance S3 as shown in Figure 4 B, can be less than 25 microns.
Fig. 6 B is the schematic diagram of single light-emitting component 300d ' in the light-emitting device array 32 ' shown in Fig. 6 A.The surface of the patterning of packing material 680 and the first metal layer 260 ' and the second metal level 262 ' can also be applied to embodiment as shown in Figure 5 A to FIG. 5 C, for the formation of structure as shown in Figure 6B.Packing material 680 is filled in the space between light-emitting component 300d ' and circuit board 23, to improve both bonding strengths and to provide current path between circuit board and light-emitting component.Packing material 680 comprises anisotropy conductiving glue (anisotropic conductive film, ACF), its have between light-emitting component 300d ' and circuit board 23 with vertical-path conduction current and between light-emitting component 300d ' and circuit board 23 to be parallel to the ability of the transverse path insulation current of light-emitting component 300d ' or circuit board.Packing material 680 was coated on circuit board 23 before connection light-emitting device array to circuit board 23.In an embodiment, the Metal Contact 22 of the first metal layer 260 ' and all non-contact circuit support plate 23 of the second metal level 262 '.Packing material 680 is positioned at the first metal layer 260 ', between the second metal level 262 ' and Metal Contact 22, for conduction current between the first metal layer 260 ', the second metal level 262 ' and Metal Contact 22.The first metal layer 260 ' and the second metal level 262 ' patterned, therefore in the face of Metal Contact 22 surface on have multiple recess and protuberance.Therefore the contact area of light-emitting component and circuit board increases, and the bonding strength of light-emitting component and circuit board also promotes.Multiple recess and protuberance have regular shape or irregularly shaped, and surface roughness (Ra) is between 0.5 to 5 micron.Similarly, the surface of the patterning of packing material 680 and the first metal layer 260 ' and the second metal level 262 ' can also be applied to above-mentioned embodiment as shown in fig. 5e, to form structure as shown in Figure 6 C.
With reference to Fig. 7 A to Fig. 7 G, for the cutaway view corresponding to manufacture method flow process each stage of a kind of light-emitting device according to the embodiment of the present invention, wherein the step of Fig. 7 A to Fig. 7 D and the embodiment shown in structure to Fig. 2 A to Fig. 2 D and relevant disclosure similar, the step of Fig. 7 F to Fig. 7 G and the embodiment shown in structure to Fig. 3 E to Fig. 3 F and relevant disclosure similar, different places is, as seen in figure 7 c, dielectric layer 240a, 240b, 240c, 280 are a photoresist agent, such as, be positive photoresist agent or negative photoresist agent; As shown in Fig. 7 D to Fig. 7 E, after formation metal level 260a, 260b, 260c and formation metal level 262a, 262b, 262c, described manufacture method more comprises and removes dielectric layer 240a, 240b, 240c, 280, therefore forms space between two adjacent light-emitting components and between the metal level of single light-emitting component; As shown in Fig. 7 F to Fig. 7 G, after removing base material 21, two adjacent light-emitting components are by space with separated from one another, and described manufacture method more comprises surface that alligatoring first conductive layer 102 exposes to form a coarse surface 102a, the method of alligatoring as previously mentioned, just repeats no more at this.In an embodiment, in order to form one for the RGB light-emitting component of the die-level shown or throw light on (chip-scale), its manufacture method is coating one first wave length conversion layer 294 on light-emitting component 300b optionally, as shown in Figure 7 G, one first convert light is converted to the light sent by light-emitting component 300b.Further, a second wave length conversion layer 296 is optionally coated on light-emitting component 300c and is converted to one second convert light for the light sent by light-emitting component 300c.Light-emitting component 300a uncoated any material for transformation of wave length, send blue light with the coarse surface 102a of direct self-emission device 300a.The generation type of each conversion layer and material as previously mentioned, do not repeat them here.Fig. 7 H is the vertical view comprising RGB light-emitting component group as shown in Figure 7 G according to the RGB light-emitting device unit of the die-level of the embodiment of the present invention, described in first width S 1, first length S2 of RGB light-emitting device unit 37, the second length d2, the first distance S3, second distance S4, the second width d1, the 3rd distance S5 embodiment as shown in Figure 4 B and relevant disclosure, do not repeat them here, different places is, luminous lamination 101 not by dielectric layer 240a and light non-transmittable layers 290 around.After formation first wave length conversion layer 294 and second wave length conversion layer 296, do not need the transparent encapsulation material 24 being coated with previous embodiment, directly perform cutting (dicing) step and via cutting light-emitting device array 32, the RGB light-emitting device unit of multiple die-level need do not formed with direct clipper circuit support plate 23.With reference to Fig. 7 I and Fig. 7 J, after cutting step, comprise cutaway view and the vertical view of the light-emitting device unit 37 of the die-level of single light-emitting component.Described in first length S1, first width S 6, the second width d1 of the light-emitting device unit 37 of die-level, the second length d2, the first distance S3 and second distance S4 embodiment as shown in Figure 5 B and relevant disclosure, do not repeat them here, different places is, the sidewall of luminous lamination 101, the first metal layer 260 and the second metal level 262 does not have dielectric layer 240a and light non-transmittable layers 290; In addition, wavelength conversion layer 298 there is not transparent encapsulation material 24.
With reference to Fig. 8 A, be a kind of display module 76 according to the embodiment of the present invention, it comprises the RGB light-emitting device unit 65 of multiple die-level be positioned on second circuit support plate 73.Such as, the RGB light-emitting device unit 65 of any two adjacent die-level is separated from one another by a spacing or seamlessly arranges and make both contact with each other.Second circuit support plate 73 comprises circuit 72, and circuit 72 is electrically connected with each light-emitting component of RGB light-emitting device unit 65, for the independent indigo plant, the red and green luminousing element that control in each RGB light-emitting device unit 65.In an embodiment, the RGB light-emitting device unit 65 that display module 76 comprises M row and the capable die-level of N has the display of X*Y pixel resolution for one, wherein M/N=1/1,3/2,4/3 or 16/9, X=a*M, Y=b*N, and a and b is all the positive integer being equal to or greater than 2.Display module 76, in the area of one square of English inch, comprises the RGB light-emitting device unit 65 more than 500.That is, display module 76, in the area of one square of English inch, comprises more than 1500 luminous laminations 101.In another embodiment, the RGB light-emitting device unit of each die-level comprises multiple RGB light-emitting component group, and each group as described above, comprises a blue light emitting device, a red light-emitting component and a green luminousing element.Multiple RGB light-emitting component group is with I*J arrayed in the RGB light-emitting device unit of a die-level, and wherein I and J is positive integer, and at least one in I and J be greater than 1.The ratio of I and J is preferably close to or equals 1/1,3/2,4/3 or 16/9.In the RGB light-emitting device unit of a die-level, distance between the two adjacent luminous laminations coming from two adjacent RGB light-emitting component groups respectively, the distance between the two adjacent luminous laminations equaling in fact to come from respectively the RGB light-emitting device unit of two adjacent die-level.The RGB light-emitting device unit 65 that display module 76 comprises the die-level that M arranges and N is capable has the display of X*Y pixel resolution for one, wherein M/N=1/1,3/2,4/3 or 16/9, X=a*M*I, Y=b*N*J, and a and b is all the positive integer being equal to or greater than 2.Display module 76, in the area of one square of English inch, comprises the RGB light-emitting component group more than 500.That is, display module 76, in the area of one square of English inch, comprises more than 1500 luminous laminations 101.The circuit drive of each light-emitting component in each RGB light-emitting device unit and RGB light-emitting device unit all by circuit board 23 and second circuit support plate 73 are formed.Material class also FR-4, BT (Bismaleimide-Triazine) resin, pottery or the glass of second circuit support plate 73.Fig. 8 B is the schematic diagram of a kind of lighting module 78 according to the embodiment of the present invention.Lighting module 78 comprises the light-emitting device unit 66 of multiple die-level be positioned on second circuit support plate 73.According to the driving voltage applied, the light-emitting device unit 66 of die-level connects with series connection or parallel way by the circuit on second circuit support plate 73.In an embodiment, lighting module 78 is arranged in a bulb 80 as shown in Figure 9.Bulb 80 comprises the optical lens 82 of a covering lighting module 78 further, one has a connecting surface and lighting module 78 is the radiating grooves 85 being positioned at connecting surface, one linking part 87 be connected with radiating groove 85, and one is connected and the electric connector 88 be electrically connected with lighting module 78 with linking part 87.
Above-described embodiment is only and technological thought of the present invention and feature is described, its object understands content of the present invention implementing according to this enabling person skilled in the art, can not with restriction the scope of the claims of the present invention, namely the equalization generally done according to disclosed spirit changes or modifies, and must be encompassed in the scope of the claims of the present invention.
Claims (20)
1. a manufacture method for light-emitting device, comprises step:
There is provided one first support plate, it has multiple first Metal Contact;
One base material is provided;
Form multiple luminous lamination and multiple groove on this base material, wherein the plurality of luminous lamination is by the plurality of groove and separated from one another;
Connect the plurality of luminous lamination and this first support plate;
Forming an encapsulating material is co-located on the plurality of luminous lamination; And
Cut this first support plate and this encapsulating material to form the light-emitting device unit of Multi-core level.
2. manufacture method as claimed in claim 1, before this encapsulating material of this formation, it also comprises and removes this base material.
3. manufacture method as claimed in claim 1, it is also contained on the plurality of luminous lamination and forms multiple metal level to be connected with the plurality of first Metal Contact.
4. manufacture method as claimed in claim 1, it also comprises formation one light non-transmittable layers in the plurality of groove and around the plurality of luminous lamination, the light for avoiding adjacent luminous lamination to send interacts or crosstalk (crosstalk).
5. manufacture method as claimed in claim 1, it also comprises formation one first wave length conversion layer on one first luminous lamination, the light that this first luminous lamination sends is converted to one first light by this first wave length conversion layer, and wherein this first luminous lamination is one of them of the plurality of luminous lamination.
6. manufacture method as claimed in claim 5, it also comprises formation one second wave length conversion layer on one second luminous lamination, the light that this second luminous lamination sends is converted to one second light by this second wave length conversion layer, and wherein this second luminous lamination is one of them of the plurality of luminous lamination.
7. manufacture method as claimed in claim 6, wherein the plurality of luminous lamination comprises one the 3rd luminous lamination, there is not any material for transformation of wave length the top of the 3rd luminous lamination, the light that wherein this first luminous lamination, this second luminous lamination and the 3rd luminous lamination send is blue light, and this first light is green glow and this second light is ruddiness.
8. manufacture method as claimed in claim 1, it also comprises formation one light non-transmittable layers in the plurality of groove, and wherein this encapsulating material is positioned on the plurality of groove and this light non-transmittable layers.
9. manufacture method as claimed in claim 6, it also comprises formation one dielectric layer in the plurality of groove and between this light non-transmittable layers and the plurality of luminous lamination.
10. manufacture method as claimed in claim 3, it also comprises the plurality of metal level of patterning and forms coarse surface to make the surface of the plurality of metal level.
11. manufacture methods as claimed in claim 1, after the plurality of luminous lamination of this connection and this first support plate, it also comprises and removes this base material to expose an exposed surface of the plurality of luminous lamination and to comprise this exposed surface of the plurality of luminous lamination of alligatoring.
12. manufacture methods as claimed in claim 1, it also comprises formation one reflector between the plurality of luminous lamination and this first support plate.
13. manufacture methods as claimed in claim 1, before the plurality of first Metal Contact of the plurality of luminous lamination of this connection and this first support plate, it also comprises formation one packing material, and this packing material is in fact the top on the surface being formed at this first support plate.
14. manufacture methods as claimed in claim 13, wherein this packing material is conduction, and the plurality of luminous lamination is electrically connected with this first support plate by this packing material.
15. manufacture methods as claimed in claim 1, wherein the plurality of first Metal Contact extends to the bottom surface of this first support plate from an end face of this first support plate.
16. manufacture methods as claimed in claim 1, it also comprises the second support plate providing to have multiple second Metal Contact, and connects the light-emitting device unit of the plurality of die-level and the plurality of second Metal Contact of this second support plate.
17. manufacture methods as claimed in claim 1, wherein the plurality of luminous lamination is that to be less than the spacing of 25 microns with one separated from one another.
18. manufacture methods as claimed in claim 1, one of them of the wherein light-emitting device unit of the plurality of die-level has one and is less than 0.36 square millimeter of (mm
2) area.
19. manufacture methods as claimed in claim 1, one of them of the wherein light-emitting device unit of the plurality of die-level comprises single luminous lamination, and the ratio of the area of the area of the light-emitting device unit of this die-level and this single luminous lamination equals or is greater than 9.
20. manufacture methods as claimed in claim 1, one of them of the wherein light-emitting device unit of the plurality of die-level comprises multiple luminous lamination, and the ratio of the gross area of the area of the light-emitting device unit of this die-level and the plurality of luminous lamination is less than 2.
Priority Applications (4)
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| CN202010934163.2A CN112164737A (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
| CN201810133192.1A CN108198807A (en) | 2013-11-18 | 2014-11-18 | Light-emitting device and preparation method thereof |
| CN201811153499.4A CN109585620B (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
| CN201810094042.4A CN108321272A (en) | 2013-11-18 | 2014-11-18 | Light-emitting device and preparation method thereof |
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| US14/082,960 US9018655B2 (en) | 2005-02-03 | 2013-11-18 | Light emitting apparatus and manufacture method thereof |
| US14/082,960 | 2013-11-18 |
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| CN202010934163.2A Division CN112164737A (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
| CN201811153499.4A Division CN109585620B (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
| CN201810133192.1A Division CN108198807A (en) | 2013-11-18 | 2014-11-18 | Light-emitting device and preparation method thereof |
| CN201810094042.4A Division CN108321272A (en) | 2013-11-18 | 2014-11-18 | Light-emitting device and preparation method thereof |
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| CN202010934163.2A Pending CN112164737A (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
| CN201811153499.4A Active CN109585620B (en) | 2013-11-18 | 2014-11-18 | Light emitting device and method for manufacturing the same |
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| CN201810094042.4A Pending CN108321272A (en) | 2013-11-18 | 2014-11-18 | Light-emitting device and preparation method thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN112164737A (en) | 2021-01-01 |
| CN109585620A (en) | 2019-04-05 |
| CN108321272A (en) | 2018-07-24 |
| TW201907586A (en) | 2019-02-16 |
| TW201521239A (en) | 2015-06-01 |
| TWI706579B (en) | 2020-10-01 |
| TW202218190A (en) | 2022-05-01 |
| CN109585620B (en) | 2022-07-01 |
| TWI711190B (en) | 2020-11-21 |
| TW201810722A (en) | 2018-03-16 |
| CN108198807A (en) | 2018-06-22 |
| TWI715885B (en) | 2021-01-11 |
| TWI808610B (en) | 2023-07-11 |
| TWI663749B (en) | 2019-06-21 |
| TW201631800A (en) | 2016-09-01 |
| TWI755825B (en) | 2022-02-21 |
| TW202046517A (en) | 2020-12-16 |
| TW201921732A (en) | 2019-06-01 |
| TWI542045B (en) | 2016-07-11 |
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