CN108695304A - Light-emitting device and its manufacturing method - Google Patents
Light-emitting device and its manufacturing method Download PDFInfo
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- CN108695304A CN108695304A CN201810291262.6A CN201810291262A CN108695304A CN 108695304 A CN108695304 A CN 108695304A CN 201810291262 A CN201810291262 A CN 201810291262A CN 108695304 A CN108695304 A CN 108695304A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of light-emitting device comprising:One base substrate, including multiple conducting wires;And multiple luminescence units, it is set on base substrate, to send out the light of at least one color, each luminescence unit includes a luminous function area (Active area), luminous function area is coupled between the first electrode and a second electrode of luminescence unit, wherein each conducting wire is respectively coupled to first electrode and second electrode.
Description
Technical field
The present invention relates to a kind of light-emitting device and its manufacturing method, more particularly to one kind are more on base substrate including being set to
The light that the light-emitting device of a luminescence unit, wherein luminescence unit are sent out includes at least one color (Hue) or multiple color.
Background technology
Luminescent system has been the required article in life, and light emitting diode is main project in the development of current luminescent system
One of.Light emitting diode is semiconductor element, is shone when passing through light emitting diode for electric current.Light emitting diode at present
Correlative technology field in, micro- light emitting diode (Micro LED) is to give priority to project.However, micro- light emitting diode and its
The technology of manufacturing method, is limited to that production yield is bad and manufacturing process is too complicated, still in the development phase.Therefore, have
Have that luminous efficacy is high, production yield is good and the easy micro- light emitting diode of manufacturing process, for one of the target developed at present.
Invention content
To solve above-mentioned problem of the prior art, the present invention provides a kind of light-emitting device comprising:One base substrate, packet
Include multiple conducting wires;And multiple luminescence units, it is set on base substrate, to send out the light of at least one color, each luminous list
Member includes a luminous function area (Active area), and luminous function area is coupled to a first electrode and one for luminescence unit
Between two electrodes, wherein each conducting wire is respectively coupled to first electrode and second electrode.
According to a kind of embodiment, the color of the sent out light of luminescence unit, selected from red, green, blue or in which any group
It closes.
According to a kind of embodiment, first electrode is anode, and second electrode is cathode.In another embodiment, first electrode
For cathode, second electrode is anode.
According to a kind of embodiment, light-emitting device further includes a transparent substrates, and transparent substrates are set on luminescence unit.Light transmission
Substrate includes multiple recess portions, and recess portion is set to a top surface, a bottom surface or the top surface and bottom surface of transparent substrates, and wherein bottom surface is face
To in luminescence unit, recess portion is substantially be overlapped with the light-emitting surface of each luminescence unit respectively, and multiple wavelength conversion material are recessed for inserting
Portion.
According to a kind of embodiment, wavelength conversion material includes:Fluorescent material, filter, quantum dot, dye materials or
Any of which combines.
According to a kind of embodiment, luminescence unit is set in the form of a matrix on base substrate.
According to a kind of embodiment, the luminescence unit of the light of one first color is sent out in light-emitting device, and sends out one second face
The luminescence unit of the light of color, at least one party being alternately disposed in matrix are upward.
According to a kind of embodiment, light-emitting device further includes a light shield layer, and light shield layer is set on base substrate to surround hair
Light unit, to interfering with each other caused by reducing between the light that luminescence unit is sent out.
According to a kind of embodiment, light-emitting device further includes a photic zone or a photic zone and a fixed bed, is laminated in hair
The same side of light unit and light shield layer.
According to a kind of embodiment, the shape in luminous function area is rectangle, quadrangle, circle, triangle or scheduled geometry
Shape.
According to a kind of embodiment, light-emitting device further includes a current-diffusion layer, current-diffusion layer is set in first electrode,
Or between first electrode and luminous function area.
According to a kind of embodiment, the first and second electrode is set to the same side of each luminescence unit;Or first and second electrode difference
It is set to the opposite side of each luminescence unit.
With regard to another viewpoint, the present invention provides a kind of manufacturing method of light-emitting device comprising:(a) a pedestal base is provided
Plate, base substrate include multiple conducting wires;And multiple luminescence units (b) are set, it is set on base substrate, to send out at least one
The light of kind color, each luminescence unit include a luminous function area (Active area), and luminous function area is coupled to luminescence unit
Between one first electrode and a second electrode, wherein conducting wire is respectively coupled to first electrode and second electrode.
According to a kind of embodiment, step (a) includes:(a1) conducting wire is formed in base substrate;And (a2) forms an electricity
For pole layer on base substrate, electrode layer is coupled to conducting wire.
According to a kind of embodiment, step (b) includes:(b1) according to the precalculated position of the first and second electrode of luminescence unit, if
Luminescence unit is set on electrode layer;And (b2) forms a light shield layer on base substrate, to surround luminescence unit, to reduce
Interfering with each other caused by between the light that luminescence unit is sent out.
According to a kind of embodiment, step (b) includes:(b3) setting luminescence unit is in a carrier layer, wherein luminescence unit
The first and second electrode be embedded in carrier layer;(b4) formed a light shield layer in carrier layer to surround luminescence unit, wherein shading
One top surface of layer and a top surface of luminescence unit, have roughly the same height;(b5) photic zone or a photic zone are set
With a fixed bed, on light shield layer and luminescence unit, wherein photic zone or photic zone and given layer are set to phase on luminescence unit
To the opposite side of the first and second electrode;And (b6) removes carrier layer, with the first and second electrode of exposure.
According to a kind of embodiment, luminescence unit sends out the light of at least multiple color, and each first and second electrode is respectively arranged at respectively
The same side of luminescence unit.
According to a kind of embodiment, step (a) includes:(a3) dielectric layer of base substrate is formed, this dielectric layer is located at hair
In light unit, dielectric layer is located at the same side of the first and second electrode of luminescence unit, to cover the first and second electrode;And (a4) is sudden and violent
Reveal the first and second electrode of dielectric layer covering, and form multiple conducting wires, to be respectively coupled to conducting wire in first electrode and the second electricity
Pole.
According to a kind of embodiment, luminescence unit sends out the light of at least multiple color, and each first and second electrode is respectively arranged at respectively
The same side of luminescence unit.
According to a kind of viewpoint, the present invention provides a kind of manufacturing method of light-emitting device comprising:One base substrate is provided,
Base substrate includes multiple connection pads;Multiple luminescence units are formed on base substrate, luminescence unit is sending out light, each luminous list
Member includes a luminous function area (Active area), and luminous function area is coupled to a first electrode and one for each luminescence unit
Between second electrode;A light shield layer is formed on base substrate, to surround luminescence unit;Expose as light shield layer is covered first
With in two electrodes at least first, and form multiple conducting wires, conducting wire is respectively coupled to first electrode and second electrode, wherein conducting wire
It is respectively coupled to connection pad again;And one transparent substrates of setting, on luminescence unit, wherein transparent substrates include multiple recess portions, recess portion
It is respectively arranged at a top surface, a bottom surface or the top surface and bottom surface of transparent substrates, wherein bottom surface is to be intended for luminescence unit, recess portion
Substantially be overlapped with the light-emitting surface of each luminescence unit respectively, multiple wavelength conversion material are for inserting recess portion.
According to a kind of embodiment, wavelength conversion material includes:Fluorescent material, filter, quantum dot, dye materials or
Any of which combines.
Description of the drawings
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of application for those of ordinary skill in the art without creative efforts, can be with
The attached drawing of other embodiment is obtained according to these attached drawings.
Fig. 1 is the schematic diagram according to the light-emitting device of one embodiment of the invention;
Fig. 2 is the schematic diagram according to the light-emitting device of one embodiment of the invention;
Fig. 3 is the schematic diagram according to the transparent substrates of one embodiment of the invention;
Fig. 4, Fig. 5, Fig. 6 are the schematic diagrames of three kinds of configurations of wavelength conversion material according in various embodiments of the present invention;
Fig. 7 is the schematic diagram according to the light-emitting device of one embodiment of the invention;
Fig. 8 is a kind of flow diagram of the manufacturing method of light-emitting device according in one embodiment of the invention;
Fig. 9 to Figure 16 is according in one embodiment of the invention, and multiple steps shows in a kind of manufacturing method of light-emitting device
It is intended to;
Figure 17 to Figure 30 is according in one embodiment of the invention, and multiple steps shows in a kind of manufacturing method of light-emitting device
It is intended to;
Figure 31 to Figure 37 is according in one embodiment of the invention, and multiple steps shows in a kind of manufacturing method of light-emitting device
It is intended to;
Figure 38 is a kind of configuration schematic diagram of luminescence unit and connection pad according in one embodiment of the invention;
Figure 39 is a kind of configuration schematic diagram of luminescence unit and connection pad according in one embodiment of the invention;
Figure 40 is the local configuration schematic diagram according to luminescence unit in Figure 39 and connection pad.
It should be pointed out that above-mentioned diagram and each component are considered inherently illustrative, rather than it is restrictive.
The similar unit of structure is to be given the same reference numerals in the figure.In addition, in order to understand and be convenient for description, it is shown in the accompanying drawings every
The size and thickness of a component illustrate unless stated otherwise, are otherwise illustrative, and in figure each component number according to
Sequence marks.
Specific implementation mode
For the present invention aforementioned and other technology contents, feature and effect coordinate refer to the attached drawing and one preferably in fact below
In the detailed description for applying example, can clearly it present.It should be appreciated that specific embodiment described herein is only explaining this Shen
Please, it is not used to limit the application.
Fig. 1 shows a kind of light-emitting device 10 according to an embodiment of the invention comprising:One base substrate 11, including it is more
A conducting wire 111;And multiple luminescence units 12, it is set to 11 on base substrate, to send out the light of at least one color (Hue).
Color can by wavelength come indicate (or by relatively narrow wavelength band, the wavelength corresponding to maximum spectral intensity, example
It is such as 450nm for blue, is about 700nm for red), each luminescence unit 12 can pass through a kind of colour light emitting, Duo Gefa
Light unit may include the luminous luminescence unit of different colours.In other words, multiple luminescence units can emit more than one face jointly
The light of color.Each luminescence unit 12 includes a luminous function area (Active area) 121, and luminous function area 121 is coupled to the list that shines
(for example, between a first electrode 122 and a second electrode 123) between the electrode of member 12.Wherein each conducting wire 111 is respectively coupled to
In first electrode 122 and second electrode 123, to pass through the signal of first electrode 122 and second electrode 123 respectively
(current or voltage signal).In this embodiment, if desired, the configuration of first electrode 122 and second electrode 123 is interchangeable.
Luminescence unit 12 may include that an optical layer 124, optical layer 124 are set on electrode 123 again.In one embodiment, optical layer 124 can
By SiO2,HfO2, or combinations thereof made by, the refractive index of optical layer 124 is between 1.0 and 2.3.Luminescence unit 12 includes one
Light-emitting surface, wherein generated light is sent out from light-emitting surface 125.In one embodiment, a top surface of luminescence unit 12 is light-emitting surface
125.In one embodiment, luminescence unit 12 is light emitting diode (LED) unit.
In one embodiment, according to semiconductor concept, luminous function region may include through barrier layer (Barrier layer)
The multiple quantum well structures (Quantum well structure) being alternately stacked to form with well layer (Well layer).Blocking
Layer and well layer are well known to those skilled in the art, do not describe details herein.
In one embodiment, first electrode 122 is anode, and second electrode 123 is cathode.In another embodiment, the first electricity
Pole 122 is cathode, and second electrode 123 is anode.
In one embodiment, as previously mentioned, a luminescence unit can only send out a kind of light of color, wherein may include blue
Light, green light or red light.In another embodiment, multiple luminescence units can send out the light of more than one color jointly.Another
In embodiment, multiple luminescence units can emit red light, blue light and green light jointly.According to demand, different colours is luminous
Unit can obtain different color of light mixed effects in various configurations.For example, can mix from multiple luminescence units
Different colours light is to obtain the coloured light of full-color effect or any other type.
The wavelength of blue light is about within 400nm-500nm.The wavelength of green light is about within 500nm-600nm.
The wavelength of red light is about in 600nm-700nm.
In an embodiment shown in Fig. 2, light-emitting device 20 includes multiple luminescence units 12 for sending out same color light.It shines
Device 20 further includes a transparent substrates 13, and transparent substrates 13 are set on luminescence unit 12.Transparent substrates 13 include multiple recess portions
(filling wavelength conversion material M, Fig. 2), recess portion are set to a bottom surface (being intended for luminescence unit 12) for transparent substrates 13, a top
Face or the bottom surface of transparent substrates 13 and top surface (on transparent substrates 13, the opposite side of bottom surface, Fig. 3), to obtain different color of light
Mixed effect.In Fig. 3, recess portion is located on the surface different from adjacent recesses.For example, the recess portion on bottom surface and the phase on top surface
Adjacent recess portion is next to each other.The bottom surface of transparent substrates 13 is to be intended for luminescence unit 12.Recess portion above-mentioned is alternately positioned in difference
Design on surface has the advantages of shortening the distance between adjacent cave (" Dist ", Fig. 3), so as to reduce light-emitting device
Size.Recess portion is substantially be overlapped with the light-emitting surface of each luminescence unit 12 125 (Fig. 1) respectively, goes out plane side in base substrate 11
To N, multiple wavelength conversion material are for inserting recess portion.In this way, the wave in recess portion can be passed through from the light that luminescence unit 12 emits
Long transition material carries out light color conversion.
An embodiment according to the present invention can be part/whole recess portions in the mode of recess portion filling wavelength conversion material M
Inner wall be coated with part/all wavelength conversion material M of wavelength conversion material film or recess portion and filled.This field skill
Art personnel can be according to the present invention to select the proper method using wavelength conversion material filling cave.
According to the present invention, luminescence unit can be the light-emitting diode chip for backlight unit (LED directly formed by semiconductor fabrication process
Chip), light emitting diode bare die (LED Die) or Light emitting diode component.
An embodiment according to the present invention, in going out on in-plane N for base substrate 11, the opening of recess portion with it is corresponding go out
Smooth surface 125 partly overlaps, such as overlapping is more than 80%.In one embodiment, the size of the opening of recess portion is equal to or more than light extraction
Face.
An embodiment according to the present invention, wavelength conversion material include:Fluorescent material, filter, quantum dot, dyestuff material
Material or in which any combination.Each recess portion can insert different wavelength conversion material.Those skilled in the art can according to the present invention with
And use demand, to select suitable wavelength conversion material.
According to one embodiment of the invention, fluorescent material includes:(Sr,Ba)Si2(O,Cl)2N2:Eu2+,Sr5(PO4)3Cl:Eu2 +,(Sr,Ba)MgAl10O17:Eu2+,(Sr,Ba)3MgSi2O8:Eu2+,SrAl2O4:Eu2+,SrBaSiO4:Eu2+,CdS:In,CaS:
Ce3+,(Y,Lu,Gd)3(Al,Ga)5O12:Ce3+,Ca3Sc2Si3O12:Ce3+,SrSiON:Eu2+,ZnS:Al3+,Cu+,CaS:Sn2+,
CaS:Sn2+,F,CaSO4:Ce3+,Mn2+,LiAlO2:Mn2+,BaMgAl10O17:Eu2+,Mn2+,ZnS:Cu+,Cl-,Ca3WO6:U,
Ca3SiO4Cl2:Eu2+,SrxBayClzAl2O4-z/2:Ce3+,Mn2+(X:0.2,Y:0.7,Z:1.1),Ba2MgSi2O7:Eu2+,
Ba2SiO4:Eu2+,Ba2Li2Si2O7:Eu2+,ZnO:S,ZnO:Zn,Ca2Ba3(PO4)3Cl:Eu2+,BaAl2O4:Eu2+,SrGa2S4:
Eu2+,ZnS:Eu2+,Ba5(PO4)3Cl:U,Sr3WO6:U,CaGa2S4:Eu2+,SrSO4:Eu2+,Mn2+,ZnS:P,ZnS:P3-,Cl-,
ZnS:Mn2+,CaS:Yb2+,Cl,Gd3Ga4O12:Cr3+,CaGa2S4:Mn2+,Na(Mg,Mn)2LiSi4O10F2:Mn,ZnS:Sn2+,
Y3Al5O12:Cr3+,SrB8O13:Sm2+,MgSr3Si2O8:Eu2+,Mn2+,α-SrO·3B2O3:Sm2+,ZnS-CdS,ZnSe:Cu+,
Cl,ZnGa2S4:Mn2+,ZnO:Bi3+,BaS:Au,K,ZnS:Pb2+,ZnS:Sn2+,Li+,ZnS:Pb,Cu,CaTiO3:Pr3+,
CaTiO3:Eu3+,Y2O3:Eu3+,(Y,Gd)2O3:Eu3+,CaS:Pb2+,Mn2+,YPO4:Eu3+,Ca2MgSi2O7:Eu2+,Mn2+,Y
(P,V)O4:Eu3+,Y2O2S:Eu3+,SrAl4O7:Eu3+,CaYAlO4:Eu3+,LaO2S:Eu3+,LiW2O8:Eu3+,Sm3+,(Sr,Ca,
Ba,Mg)10(PO4)6Cl2:Eu2+,Mn2+,Ba3MgSi2O8:Eu2+,Mn2+,ZnS:Mn2+,Te2+,Mg2TiO4:Mn4+,K2SiF6:Mn4 +,SrS:Eu2+,Na1.23K0.42Eu0.12TiSi4O11,Na1.23K0.42Eu0.12TiSi5O13:Eu3+,CdS:In,Te,(Sr,Ca)
AlSiN3:Eu2+,CaSiN3:Eu2+,(Ca,Sr)2Si5N8:Eu2+,Eu2W2O7, or in which any combination.
Fig. 4, Fig. 5, Fig. 6 be in the different colours conversion designs according to the present invention, three kinds of wavelength conversion material configurations
Schematic diagram (such as Fig. 2 and Fig. 3, wavelength conversion material may be provided in the recess portion of transparent substrates 13).In Fig. 4, for red light, green
Coloured light and the wavelength conversion material M of blue light conversion are aligned to matrix, and are alternately arranged at least one direction in a matrix
(it is identical to Fig. 5, level is all alternately arranged with vertical direction, and in Fig. 6, the wavelength conversion material M of different color light conversion is a side
It is alternately arranged upwards).In one embodiment, when luminescence unit 12 sends out blue light, wave shown in transparent substrates 13 in Fig. 5
Long transition material M can not include the wavelength conversion material (blank position between wavelength conversion material) of converted blue light,
Middle blue light can directly be sent out by luminescence unit 12.Wavelength conversion material M for red light and green light conversion is located at that
In this parallel alternate line, since blue light is directly sent out from luminescence unit 12, it (does not include blue light to have a stray line
The wavelength conversion material of conversion).In an embodiment shown in Fig. 6, the wavelength convert material for red light and green light conversion
Material M is arranged in another configuration, wherein not including the wavelength conversion material of blue light conversion, blue light is directly from luminescence unit 12
It sends out (blank position between wavelength conversion material M).In addition, in Figure 5, for identical color, two adjacent wavelength turn
The distance T1 measured between the center of conversion materials is identical distance.In addition, in Figure 5, two adjacent phase light of same color conversions
The distance between the center of wavelength conversion material M of (by taking red as an example) T1 is identical.In figure 6, it is separated by blank position
Wavelength conversion material M, center the distance between T2s of the distance between center T3 more than adjacent wavelength conversion material M.
Other than the matrix of above-mentioned rectangle, in one embodiment, luminescence unit 12 (or with corresponding wavelength convert material
Material) with another type be arranged on base substrate, such as radially, ellipse or diamond shape, can be according to application purpose or function
It is selected.
In another embodiment, as depicted in figs. 1 and 2, light-emitting device further includes the shading being arranged on base substrate 11
Layer 14, for interfering with each other caused by the light that luminescence unit 12 is sent out with reduction by other luminescence units 12.Light shield layer
14 can fill the space between adjacent luminescence unit 12.In one embodiment, light shield layer 14 may include multiple discrete portions
Divide and shows.For example, each discrete portions surround luminescence unit 12.The top surface 21 of light shield layer 14 is in and the substantially phase of light-emitting surface 125
Same height.In another embodiment, when including wavelength conversion material M, light shield layer 14 can also surround at least part wavelength
Transition material M (not shown) passes through interfering with each other caused by other wavelength conversion material M for reducing light extraction.
In another embodiment as shown in Figure 1, light-emitting device 10 further includes photic zone 16 or photic zone 16 and fixes
Layer 15, is laminated on light-emitting surface 125.In this embodiment, fixed bed 15 is selectable, to fixed photic zone 16 in
On luminescence unit 12 so that photic zone 16 can be directly layered on fixed bed 15.Alternatively, photic zone 16 can not fixed
It is directly laminated on light-emitting surface 125 in the case of layer 15.
In one embodiment, above-mentioned transparent substrates or euphotic material include:Thermosetting resin, thermoplastic resin, indigo plant
Jewel (Sapphire), silicon, aluminium oxide, aluminium nitride, polymer material or other translucent materials.In one embodiment, light transmission material
Material is for transmiting or diffusing the light passed therethrough, such as the not transparent material or trnaslucent materials of light scattering.
In one embodiment, the shape of luminous function area 121 (alternatively, correspondingly-shaped of luminescence unit 12) can be rectangle,
Square, round, triangle or prespecified geometric.Shape can be required according to illumination performance or other purposes are designed.Example
Such as, the shape in luminous function area 121 can according to conductor configurations, and on the edge in luminous function area 121 have recess for
Conducting wire passes through.Those skilled in the art can be according to the present invention and use demand, to select the luminous function area 121 of suitable shape
(or luminescence unit 12) is to meet its demand.
In an embodiment as shown in Figure 7, light-emitting device 30 further includes the current spread being arranged in first electrode 122
Floor 126 or the current-diffusion layer 126 between first electrode 122 and luminous function area 121.When the setting of first electrode 122 exists
When on current-diffusion layer 126, the configuration range of first electrode 122 can be less than matching for the current-diffusion layer of current-diffusion layer 126
Set range.
In one embodiment, the material of current-diffusion layer 126 may include:Ti,Al,Pt,Ni,Au,Pd,Co,Cr,Sn,
Nd, Hf or its alloy.
In the embodiment shown in fig. 1, as described above, the first and second electrodes 122 and 123 are arranged in luminescence unit 12
Same side (bottom side).However, according to the present invention, in another embodiment shown in Fig. 7, first electrode 122 and second electrode 123
It can be arranged on the other side (top side) of luminescence unit 12.Further, if it is desired, first electrode 122 and second electrode
123 can be separately positioned on the opposite side (having the different both sides in face of direction) of luminescence unit 12.For example, in luminescence unit 12
In, first electrode 122 can be arranged on the bottom side of luminescence unit 12, and second electrode 123 can be arranged in luminescence unit 12
Top side, vice versa.Those skilled in the art will know that selecting electrode arrangement appropriate according to how the present invention can be light-emitting device.
Referring to Fig. 8, according to a viewpoint, the present invention provides a kind of manufacturing methods of light-emitting device, including:Offer includes
The base substrate (a) of multiple conducting wires (in an embodiment, conducting wire can be the similar traverse design in light-emitting device 10 or 20);It carries
For multiple luminescence units, to be arranged on base substrate, the light (b) for sending out at least one color.
In one embodiment, aforementioned step (a) may include:Sacrificial substrate Ssac is provided, and on sacrificial substrate Ssac
Form first circuit layer Lcir1 (Fig. 9).Next, formed first circuit layer Lcir1 pattern (for example, by etching or other
Material removal method forms the pattern of first circuit layer Lcir1) (Figure 10).Next, after the step of Figure 10, there are two types of choosings
It selects:With the pattern and sacrificial substrate Ssac of submount material covering first circuit layer Lcir1, formed on baseplate material multiple holes with
Exposure first circuit layer Lcir1 (Figure 11 A), and the hole on first circuit layer Lcir1, second circuit is laminated by filling mode
Layer Lcir2 layers (Figure 12).Alternatively, the pattern of the second circuit layer Lcir2 is laminated on first circuit layer Lcir1 (Figure 11 B), and shape
At submount material to surround first circuit layer Lcir1 and the second circuit layer Lcir2 (Figure 12).After Figure 12 the step of,
Tertiary circuit layer Lcir3 is formed in two circuit layer Lcir2 and submount material, and removes sacrificial substrate Ssac (Figure 13).It is removing
After sacrificial substrate Ssac, the 4th circuit layer Lcir4 is formed on first circuit layer Lcir1 (Figure 14).
In one embodiment, base substrate 11 above-mentioned includes submount material and conducting wire 111, and wherein conducting wire 111 includes the
One, second, third and the 4th circuit layer Lcir1, Lcir2, Lcir3 and Lcir4.According to the present embodiment, above-mentioned offer includes leading
The step of base substrate 11 of line 111 (a) includes:Form (the first and second circuit layer Lcir1 of conducting wire 111 in base substrate 11
And Lcir2) (a1);And (in an embodiment, electrode layer can be tertiary circuit layer Lcir3 or the 4th circuit layer to formation electrode layer
Lcir4) on base substrate 11, electrode layer is couple to conducting wire 111 (first and second circuit layer Lcir1 and Lcir2) (a2).
In one embodiment, step (b) includes:It will be sent out according to the precalculated position (not shown) of first electrode and second electrode
(b1) (Figure 15) is arranged on electrode layer in light unit 12;And it (in one embodiment, and in adjacent shines on base substrate
Between unit 12) light shield layer 14 is formed to surround luminescence unit 12 (Figure 16), for reducing what is sent out by other luminescence units 12
Interfering with each other (b2) caused by light.In one embodiment, above-mentioned first electrode and second electrode may include in tertiary circuit layer
In Lcir3 or the 4th circuit layer Lcir4 comprising the corresponding position with above-mentioned first electrode and second electrode is shone with being arranged
Unit 12.Luminescence unit can send out the light of more than one color jointly.In one embodiment, the light sent out from each luminescence unit
Color can be selected in being combined by blue, red, green and any of which.
In one embodiment, step (b) includes:Luminescence unit 12 is set in carrier layer 18, wherein the first and second electricity
Pole 122 and 123 is embedded in carrier layer 18 (b3) (Figure 17-Figure 18);In carrier layer 18 (in an embodiment, and in adjacent hair
Between light unit 12) light shield layer 14 is formed to surround unit 12, the wherein top surface of light shield layer 14 corresponds to the top of luminescence unit 12
Face (Figure 19) (in an embodiment, top surface and the top surface of luminescence unit 12 of light shield layer 14 are roughly the same height) (b4);
Luminescence unit 12 and setting photic zone 16 on the top surface of light shield layer 14 or photic zone 16 and fixed bed 15 (Figure 20), wherein light transmission
Layer 16 or photic zone 16 and fixed bed 15, are the opposites relative to the first and second electrodes 122 and 123 on luminescence unit 12
On side (b5);And it is inverted luminescence unit 12 and carrier layer 18, removal carrier layer 18 is with exposure 122 He of the first and second electrodes
123 (Figure 21) (b6).In one embodiment, there is no fixed bed 15, wherein photic zone between photic zone 16 and luminescence unit 12
16 on luminescence unit 12.As needed, luminescence unit 12 can be provided commonly for sending out the light of more than one color.This
Outside, first electrode 122 and second electrode 123 are arranged on the same side of each luminescence unit 12.
In one embodiment, step (a) includes:The dielectric of base substrate 11 is formed on luminescence unit 12 and light shield layer 14
19 (Figure 22) of layer, dielectric layer 19 are located at the identical of luminescence unit 12 and the first electrode 122 of luminescence unit 12 and second electrode 123
Side, to cover first electrode 122 and second electrode 123 (a3);Multiple holes are formed in dielectric layer 19, with exposure by dielectric layer 19
First and second electrodes 122 and 123 (Figure 23 and Figure 26 correspond respectively to the first and second electrodes 122,123) of covering, are being situated between
Multiple conducting wires 111 for being coupled respectively with the first and second electrodes 122 and 123 are formed in electric layer 19, and (Figure 24 and Figure 27, correspond to respectively
In the first and second electrodes 122,123) (a4);Other dielectric layers 19A and 19B are formed to cover conducting wire 111 (Figure 25 and Figure 28);
Multiple holes are formed to expose conducting wire 111 (Figure 29);And multiple conductive parts are formed, it is used for transmission the signal (figure of luminescence unit 12
30)。
In one embodiment, the material of above-mentioned light shield layer includes:Reflecting material or light absorbent.It is above-mentioned in one embodiment
The material of light shield layer can also be electrically insulating material.In one embodiment, above-mentioned submount material may include material identical with dielectric layer 1
Material.
As shown in Figure 31-Figure 37, according to a kind of viewpoint, the present invention provides a kind of manufacturing method of light-emitting device 30 (Fig. 7),
It includes:There is provided a base substrate 110 comprising multiple connection pads 112 (Figure 31) positioned at 110 upper surface of base substrate;The bottom of at
Multiple luminescence units 12 are formed on seat substrate 110, for shining, luminescence unit 12 includes luminous function area 121, luminous function area
121 are coupled between the first and second electrodes 122 and 123 (Figure 32);Light shield layer 14 is formed on base substrate 110, and (one implements
In example, and between adjacent luminescence unit 12), to surround luminescence unit 12;The first electrode that exposure is covered by light shield layer 14
122 and second electrode 123 at least one (when light shield layer and first or two electrode have different height when, can once expose screening
One of the electrode that photosphere is covered;When light shield layer with first or two electrode have identical height when, two electrodes can expose simultaneously
In outside light shield layer 14), to form multiple holes (Figure 34);By way of inserting hole, formed respectively with first electrode 122 and second
(Figure 35 A and Figure 35 B are shown respectively corresponding with first electrode 122 and second electrode 123 multiple conducting wires 111 that electrode 123 couples
Different location sectional view), wherein conducting wire 111 is further respectively coupled to connection pad 112;Photic zone is formed to cover (the figure of conducting wire 111
36);Transparent substrates 13 are provided, upper surface includes that multiple recess portions (insert multiple wavelength convert materials at least one in lower surface
Expect M, Figure 37), wherein bottom surface is to be intended for luminescence unit 12, and recess portion is substantially be overlapped with the light-emitting surface of each luminescence unit 125 respectively,
Multiple wavelength conversion material M are for inserting recess portion.
Figure 38 is please referred to, goes out in-plane schematic diagram which show light-emitting device 30.Connect luminescence unit 12 not
It, can be respectively along both horizontally and vertically configuring with the conducting wire of electrode, the difference to connect matrix periphery in luminescence unit 12 connects
Pad 112.Connection pad 112 can be the terminal for transferring signals to external circuit/transmitted from external circuit (not shown).
In one embodiment, the material of the conducting wire 111 of light-emitting device 30 may include transparent conductive material (for example, conducting wire 111 is logical
121 top of first electrode 122 or luminous function area is crossed, does not influence its luminescent properties), such as ITO (indium tin oxide), CTO (cadmiums
Tin-oxide), ZnO:Al,ZnGa2O4,SnO2:Sb,Ga2O3:Sn,AgInO2:Sn,In2O3:Zn,NiO,MnO,FeO,Fe2O3,
CoO,CrO,Cr2O3,CrO2,CuO,SnO,GaO,RuO2,Ag2O,CuAlO2,SrCu2O2,LaMnO3, PdO and any of which
Combination.
Figure 39 is please referred to, the configuration of the conducting wire 111 and connection pad 112 according to an embodiment is shown.It is sent out for coupling
The connection pad 112 of first and second electrodes of light unit is designed to:The connection pad for coupling the first and second electrodes is all arranged in phase
Homonymy (for example, two groups of connection pads of top or lower part, all couple the first and second electrodes);Alternatively, being separately connected luminescence unit
The connection pad 112 of first and second electrodes is separately positioned in opposite side (for example, the connection pad on top and first electrode coupling, lower part
Connection pad and second electrode couple).It can be needed that its connection pad is selected to design according to function.In addition, in an embodiment of Figure 39,
Not only the connection pad of upper and lower part can be used for coupling the first and second electrodes, and the connection pad in left and right portion can also be used for coupling first and second
Electrode.
In Figure 40, show that the partial view (being illustrated by taking the partial view of upper left as an example) of Figure 39, wherein conducting wire 111 wrap
Include time conducting wire 111A, 111B, 111C, 111D, 111E and 111F.Secondary conducting wire 111A, 111B, 111C, 111D, 111E and
At least one in 111F to can be used to couple first electrode, remaining at least two conducting wire can be used to couple second electrode.For example,
Secondary conducting wire 111B is coupled with first electrode, and adjacent secondary conducting wire 111A and 111B is coupled with second electrode.
The above is only present pre-ferred embodiments, is not intended to limit the scope of the present invention, therefore
Every the present invention can be implemented in other specific forms without departing from the true scope of the present invention, based on the present invention
Technical spirit introduction to any trickle amendment made by above example, equivalent variations and modification, for those skilled in the art
For, many change and modification will be apparent, in the range of still falling within technical solution of the present invention.
Claims (20)
1. a kind of light-emitting device, which is characterized in that including:
Base substrate, including multiple conducting wires;And
Multiple luminescence units are set on the base substrate, to send out the light of at least one color, each luminescence unit packet
Luminous function area is included, the luminous function area is coupled between the first electrode and second electrode of the luminescence unit, wherein
The multiple conducting wire is respectively coupled to the first electrode and the second electrode.
2. light-emitting device according to claim 1, wherein the color of the multiple the sent out light of luminescence unit, selected from red
Color, green, blue or in which any combination.
3. light-emitting device according to claim 1 further includes transparent substrates, the transparent substrates include multiple recess portions, institute
It states multiple recess portions and is set to the top surface, bottom surface or the top surface of the transparent substrates and the bottom surface, wherein the bottom surface is face
To in the multiple luminescence unit, the multiple recess portion is substantially be overlapped with the light-emitting surface of each luminescence unit respectively, Duo Gebo
Long transition material is for inserting the multiple recess portion.
4. light-emitting device according to claim 3, wherein the multiple wavelength conversion material includes:Fluorescent material, optical filtering
Material, quantum dot, dye materials or in which any combination.
5. light-emitting device according to claim 1 is set to described wherein the multiple luminescence unit is with a matrix type
On base substrate.
6. light-emitting device according to claim 5, wherein the multiple luminescence unit of the light of the first color is sent out, with hair
Go out the multiple luminescence unit of the light of the second color, at least one party for being alternately disposed at the matrix is upward.
7. light-emitting device according to claim 1 further includes light shield layer, the light shield layer is set on the base substrate
To surround the multiple luminescence unit, to reduce interfering with each other caused by the light that the multiple luminescence unit is sent out.
8. light-emitting device according to claim 7 further includes photic zone or photic zone and fixed bed, it is laminated in described
The same side of multiple luminescence units and the light shield layer.
9. light-emitting device according to claim 1, wherein the shape in the luminous function area is rectangle, quadrangle, circle
Shape, triangle or scheduled geometry.
10. light-emitting device according to claim 1 further includes current-diffusion layer, the current-diffusion layer is set to described
In first electrode or between the first electrode and the luminous function area.
11. light-emitting device according to claim 1, wherein those first and second electrodes are set to each luminescence unit
Same side;Or those first and second electrodes are respectively arranged at the opposite side of each luminescence unit.
12. a kind of manufacturing method of light-emitting device, which is characterized in that including:
(a) base substrate is provided, the base substrate includes multiple conducting wires;And
(b) multiple luminescence units are set, are set on the base substrate, to send out the light of at least one color, each hair
Light unit includes luminous function area, the luminous function area be coupled to the luminescence unit first electrode and second electrode it
Between;
Wherein the multiple conducting wire is respectively coupled to the first electrode and the second electrode.
13. manufacturing method according to claim 12, wherein (a) includes:
(a1) the multiple conducting wire is formed in the base substrate;And
(a2) electrode layer is formed on the base substrate, and the electrode layer is coupled to the multiple conducting wire.
14. manufacturing method according to claim 13, wherein (b) includes:
(b1) according to the precalculated position of those the first and second electrodes of the multiple luminescence unit, the multiple luminescence unit is set
In on the electrode layer;And
(b2) light shield layer is formed on the base substrate, to surround the multiple luminescence unit, to reduce the multiple hair
Interfering with each other caused by the light that light unit is sent out.
15. manufacturing method according to claim 13, wherein the multiple luminescence unit sends out at least one color
Light, first and second electrode are set to the same side of each luminescence unit.
16. manufacturing method according to claim 12, wherein (b) includes:
(b3) the multiple luminescence unit is set in carrier layer, wherein those first and second electrodes of the multiple luminescence unit
It is embedded in the carrier layer;
(b4) formed light shield layer in the carrier layer to surround the multiple luminescence unit, wherein the top surface of the light shield layer with
And the top surface of the luminescence unit, there is roughly the same height;
(b5) photic zone or photic zone and fixed bed are set, on the light shield layer and the multiple luminescence unit, wherein described
Photic zone or the photic zone and the fixed bed, are set on the multiple luminescence unit with respect to those the first and second electrodes
Opposite side;And
(b6) carrier layer is removed, with those first and second electrodes of exposure.
17. manufacturing method according to claim 16, wherein (a) includes:
(a3) dielectric layer of the base substrate is formed, the dielectric layer is located on the multiple luminescence unit, the dielectric layer
Positioned at the same side of those the first and second electrodes of the multiple luminescence unit, to cover those the first and second electrodes;And
(a4) those first and second electrodes of the exposure dielectric layer covering, and multiple conducting wires are formed, it is the multiple to be respectively coupled to
Conducting wire is in the first electrode and the second electrode.
18. manufacturing method according to claim 16, wherein the multiple luminescence unit sends out at least one color
Light, each first and second electrode are respectively arranged at the same side of each luminescence unit.
19. a kind of manufacturing method of light-emitting device, which is characterized in that including:
Base substrate is provided, the base substrate includes multiple connection pads;
Multiple luminescence units are formed on the base substrate, the multiple luminescence unit is sending out light, each luminous list
Member include luminous function area, the luminous function area be coupled to each luminescence unit first electrode and second electrode it
Between;
A light shield layer is formed on the base substrate, to surround the multiple luminescence unit;
Expose as in those first and second electrodes that the light shield layer is covered at least first, and form multiple conducting wires, it is described
Multiple conducting wires are respectively coupled to the first electrode and the second electrode, wherein the multiple conducting wire is respectively coupled to institute again
State multiple connection pads;
Transparent substrates are set on the multiple luminescence unit, the transparent substrates include multiple recess portions, the multiple recess portion
It is not set to the top surface, bottom surface or the top surface of the transparent substrates and the bottom surface, wherein the bottom surface is described to be intended for
Multiple luminescence units, the multiple recess portion is substantially be overlapped with the light-emitting surface of each luminescence unit respectively, multiple wavelength convert materials
Material is for inserting the multiple recess portion.
20. manufacturing method according to claim 19, wherein the multiple wavelength conversion material includes:Fluorescent material, filter
Luminescent material, quantum dot, dye materials or in which any combination.
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| CN112310136B (en) * | 2019-07-23 | 2024-03-19 | 薛富盛 | Passive micro-LED array device with uniform brightness |
| TWI795289B (en) * | 2021-05-17 | 2023-03-01 | 芬蘭商塔科托科技有限公司 | Optoelectronically functional multilayer structure and related manufacturing method |
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