TWI409896B - Substrate processing apparatus and manufacturing method for a semiconductor device - Google Patents

Abstract

A substrate processing apparatus is provided to circulate inert gas in a standby chamber, by supplying inert gas to a standby chamber by a gas supply part, by exhausting inert gas in the standby chamber by a gas exhaust part installed at one side of the standby chamber confronting the gas supply part, and by exhausting the insert gas in a first gas exhaust part through a first gas exhaust part connected to the gas exhaust part. A substrate is processed in a process chamber. A substrate maintaining unit maintains the substrate, carried into the process chamber. The substrate maintaining unit stands by in a standby chamber(12) installed in the lower part of the process chamber. A gas supply part supplies inert gas or oxygen-containing gas to the standby chamber, installed at the lateral side of the standby chamber. A gas exhaust part exhausts the inert gas or the oxygen-containing gas from the standby chamber, installed at the lateral side of the standby chamber confronting the gas supply part. The inert gas or the oxygen-containing gas is exhausted by a first gas exhaust path connected to the gas exhaust part. The oxygen-containing gas in the gas exhaust part is exhausted by a second gas exhaust path(49) connected to the lateral side of the gas exhaust part. The second gas exhaust path is opened/closed by a gate valve(62).

Description

Substrate processing apparatus and method of manufacturing semiconductor apparatus

The present invention relates to a substrate processing apparatus and a method of manufacturing the semiconductor device, and more particularly to a technique for preventing or suppressing the generation of a natural oxide film.

For example, in a method of manufacturing a semiconductor integrated circuit (hereinafter referred to as IC), a semiconductor wafer (hereinafter referred to as a wafer) in which a semiconductor integrated circuit including a semiconductor element is fabricated is subjected to a thermal treatment. Effective technology used by (furnace).

In the IC manufacturing method, a heat treatment apparatus is widely used for forming a CVD film such as an insulating film, a metal film or a semiconductor film, or a heat treatment process for diffusing impurities.

Conventionally, such a heat treatment apparatus includes a processing chamber that performs a batch process while holding a plurality of wafers on a boat, and a waiting room before and after the wafer chamber is moved in and out of the processing chamber; The cleaning unit is composed of a filter and a blower that supplies a clean environment to the standby room, and a boat lifter that is disposed opposite to the standby chamber and the filter to lift and lower the wafer boat between the standby chamber and the processing chamber.

Usually, the driving device of the boat lifter, that is, the motor system, is disposed in a motor installation chamber that is isolated by the standby chamber.

Such a heat treatment apparatus is configured such that a nitrogen gas of an inert gas is discharged from a cleaning unit to a standby chamber and circulated, thereby preventing the natural oxide film from being formed on the wafer due to oxygen (O ₂ ) in the atmosphere. For example, Patent Document 1.

Patent Document 1: JP-A-2004-119888

In order to prevent the natural oxide film from being formed on the wafer by the oxygen in the atmosphere by the nitrogen gas being ejected from the clean unit and circulating in the standby chamber, the oxygen concentration in the standby chamber must be maintained at several ppm or less.

Therefore, it is necessary to prevent the atmosphere from flowing into the standby room by maintaining the standby chamber in a positive pressure state by the nitrogen gas. In other words, the sealing performance of the frame forming the standby chamber is set to a high state, and the nitrogen gas having a flow rate greater than or equal to the flow rate of the nitrogen gas leaking from the frame gap or the like is supplied to the standby chamber.

However, in the substrate processing apparatus that performs the heat treatment process under the assumption of a nitrogen gas atmosphere, the exhaust pipe for exhaust gas in the standby chamber does not need such a large size.

In other words, in this case, it is only necessary to maintain the relationship of the following formula.

Inflow environment to the standby room = additional nitrogen gas supply + (standby indoor circulation environment) The amount of discharge environment from the standby room = the amount of leakage from the standby room, etc. + (standby indoor circulation environment) The amount of inflowing environment into the standby room ≧ the amount of discharged environment from the standby room

In addition, there is no need to suppress natural oxide film (for natural oxygen generation) In the heat treatment process of the film type of the film, it is preferred that the flow in one direction without circulation is caused by the atmosphere (oxygen-containing gas, that is, air), which is also referred to as clean. Clean air is created in the standby room.

In this case, it is only necessary to simply set the relationship to satisfy the following formula.

Inflow environment to the standby room = amount of discharge environment from the standby room

In this case, it is preferred that the clean air is blown from one side surface of the standby chamber toward the opposite side surface so that the crystal boat flows horizontally, thereby preventing precipitation or retention of particles or organic substances in the standby chamber.

In other words, when the standby room is to be in a clean environment, the exhaust pipe for exhausting the standby room needs to have a sufficiently large size.

It is expected that the above two requirements can be realized in the same substrate processing apparatus.

However, it is assumed that the high-tightness of the casing in the standby indoor environment does not ensure sufficient exhaust performance.

When the size of the design exhaust pipe is increased to ensure sufficient exhaust performance, problems such as deterioration of the footprint of the substrate processing apparatus may occur.

It is an object of the present invention to provide a substrate processing apparatus and a method of manufacturing a semiconductor device which can achieve both a circulation of a standby indoor environment and a flow in one direction.

The means to solve the above problems are as follows.

The substrate processing apparatus includes: a processing chamber for processing the substrate; a substrate holder for holding the substrate and carried into the processing chamber; and a standby chamber provided below the processing chamber for waiting for the substrate holder; The supply unit is provided on the side of the standby chamber for supplying an inert gas or an oxygen-containing gas to the standby chamber, and the gas discharge unit is provided on the side of the standby chamber facing the gas supply unit, and is used for the above-mentioned The standby chamber is configured to discharge the inert gas or the oxygen-containing gas; the first gas discharge passage is connected to the gas discharge portion for discharging the inert gas or the oxygen-containing gas in the gas discharge portion; and the second gas discharge path And connected to the side of the gas discharge unit for discharging the oxygen-containing gas in the gas discharge unit; and a gate valve for opening/closing the second gas discharge path.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In the present embodiment, the substrate processing apparatus of the present invention is an example of the heat treatment apparatus 10 constructed as shown in Figs.

Among them, there are an open cassette and a FOUP (Front Opening Unified Pod), which are transport carriers that transport the wafer as a substrate. Open cassette, formed into a roughly cubic box shape One of them is opposite to each other. The wafer carrying case is formed in a box shape of a substantially cubic shape, and one surface thereof is opened, and a lid portion is detachably attached to the opening surface.

When the wafer transfer cassette is used for the wafer transfer jig, the cleanliness of the wafer can be maintained even if there are particles or the like in the surrounding environment. Because the wafer is carried in a sealed state.

In the present embodiment, the wafer transport cassette 2 is used as the transport jig for the wafer 1.

The heat treatment apparatus 10 of the present embodiment includes a casing 11. The casing 11 is configured to have an airtight structure and exhibits airtightness at an atmospheric pressure. The casing 11 is configured to stand by in the standby chamber 12 when the substrate holder is carried into the processing chamber.

The housing 11 is a combination of a combined frame and a panel portion. It is possible to form a very small gap which is a source of leakage, such as between the illuminating surfaces of the panel portions or between the overlapping surfaces.

The mounting plate 13 is contacted and engaged with the front wall of the frame 11. The contact surface between the frame 11 and the mounting plate 13 may form a very small gap which is a source of leakage.

A wafer loading port 14 is provided on the mounting plate 13 to form a wafer loading port 14 for loading and unloading the wafer 1 (loading and unloading). A wafer carrier opening/closing device 15 is provided at a position corresponding to the wafer loading/unloading ports 14 and 14 for opening and closing the wafer carrying case 2 by attaching and detaching the lid portion 3 (see FIG. 1) of the wafer carrier 2 .

A service port 16 is provided on the rear wall of the frame 11. At the service port 16 A service door 17 is mounted in an openable/closed manner. The opening edge portion of the maintenance port 16 on the back surface of the casing 11 and the contact surface between the service door 17 may form a minute gap which is a source of leakage. .

The lifter 18 is provided in the front side space of the standby room 12. The lifter 18 raises and lowers the wafer transfer equipment 18A. The wafer transfer device 18A is lifted and lowered by a lifter (hereinafter also referred to as a wafer transfer device lifter) 18, and the wafer 1 is transferred between the wafer carry-in/out port 14 and the boat 21. . By this transfer, the wafer transfer device 18A can carry the wafer 1 into and out of the wafer carrier 2 and the wafer boat 21.

A boat elevator 19 is vertically disposed in a side space behind the standby room 12. The boat lifter 19 raises and lowers the seal cover portion 20 in the vertical direction.

The sealing cover portion 20 is formed in a disk shape. On the center line of the sealing cover portion 20, the boat 21 as the substrate holder is vertically stood.

The wafer boat 21 holds a plurality of wafers 1 in a state of being center-aligned and horizontally arranged.

The heating unit 22 is disposed concentrically on the upper portion of the rear end portion of the frame body 11. The heating unit 22 is supported by the frame 11.

The outer tube 23 and the inner tube 24 are disposed concentrically in the heating unit 22. The outer tube 23 is formed of a heat-resistant material such as quartz or tantalum nitride, and has an inner diameter larger than the outer diameter of the inner tube 24, and is formed into a cylindrical shape in which the upper end is closed at the lower end.

The inner tube 24 is formed of a heat-resistant material such as quartz or tantalum nitride, and is formed into a cylindrical shape in which both the upper end and the lower end are open.

In the hollow portion of the cylinder of the inner tube 24, the processing chamber 25 is formed to receive the crystal Boat 21.

The manifold 26 is disposed below the outer tube 23 so as to be concentric with the outer tube 23. The manifold 26 is formed of stainless steel and is formed into a cylindrical shape in which both the upper end and the lower end are open. The manifold 26 is clamped to the outer tube 23 and the inner tube 24 to support them.

The lower end opening of the manifold 26 is opened/closed by the opener/closer 27.

The side wall portion of the manifold 26 is connected such that the exhaust pipe 28 communicates with the space between the outer tube 23 and the inner tube 24. The exhaust pipe 28 performs exhaust of the processing chamber 25.

In the seal cover portion 20, the gas supply pipe 29 as a gas introduction portion is connected so as to be connectable to the inside of the processing chamber 25.

As shown in FIGS. 1 to 4, a circulation pipe 32 is disposed in the casing 11, and the circulation path 31 is formed to circulate the nitrogen gas 30 of the inert gas in the standby chamber 12.

The circulation pipe 32 is provided with a suction side pipe portion 34 having a suction port 33. The suction side pipe portion 34 constitutes a gas discharge portion for discharging the nitrogen gas 30 or the clean air (oxygen-containing gas) 40. The suction side pipe portion 34 is such that the suction port 33 is opened and lowered in the moving portion of the arm portion 19d of the boat elevator 19 and the arm portion of the lifter 18.

The suction side pipe portion 34 as the gas discharge portion from the standby chamber 12 is on the right side surface of one side surface of the standby chamber 12, so that the lifter 18 and the boat lifter 19 are separated by the transfer chamber (but both arm portions) The movable portion is in communication), and is laid in such a manner that the entire entire surface extends vertically.

At the front end of the lower end portion of the suction side pipe portion 34, the main connecting pipe portion is connected 35 suction side end. The main connecting pipe portion 35 is horizontally laid outside the standby chamber 12 so as to traverse the underside of the wafer carrier opening/closing device 15. The main suction pipe portion 35 faces the side wall of the standby chamber 12 to open a large suction port 36 so as to be horizontally long.

The suction side end of the sub-connection pipe portion 37 is connected to a substantially central position of the lower end portion of the suction side pipe portion 34. The sub-connecting pipe portion 37 is attached to the bottom surface of the standby chamber 12 so as to be transversely cut in the left-right direction.

The lower end of each of the blowing side portions of the main connecting pipe portion 35 and the sub connecting pipe portion 37 is connected to the lower end portion of the blowing side pipe portion 39. In the side pipe portion 39, the air outlet is opened in a large and comprehensive manner. The blowing side pipe portion 39 is vertically laid on the side opposite to the suction side pipe portion 34 of the standby chamber 12, that is, the left side surface.

The air outlet 38 of the blow-out side pipe portion 39 is built into the cleaning unit 41. The cleaning unit 41 is a gas supply means, that is, a gas supply unit for supplying the nitrogen gas 30 and the clean air 40.

The cleaning unit 41 includes a filter 42 for trapping fine particles, and a plurality of blowers 43 for sending the cleaned nitrogen gas 30 and the clean air 40. The cleaning unit 41 is configured such that the filter 42 is exposed to the standby chamber 12 and becomes The blower 43 is below the flow side.

As shown in Fig. 2, on the upstream side of the cleaner unit 41 of the blow-out side pipe portion 39, a fresh air supply pipe 44 is connected for supplying fresh air, and a fresh air supply pipe 44 is provided as a regulator for the open/close valve ( Damper) 45.

A nitrogen gas supply pipe 46 is connected to the blow-out side pipe portion 39, and a nitrogen gas supply is provided. The feed pipe 46 constitutes an inert gas supply path for supplying an inert gas to the circulation path 31. A damper 47 as a flow control valve is present in the nitrogen gas supply pipe 46.

As shown in FIG. 2, the cooler 48 is laid in the lower end part of the blowing side pipe part 39 so that it may extend in the front-back direction. The cooler 48 cools the environment (nitrogen gas 30) that is recovered by the main connecting pipe portion 35 and the sub-connecting pipe portion 37 to the blowing-side pipe portion 39.

In the present embodiment, the cooler 48 is constituted by a water-cooled heat exchanger.

A damper 57 as a flow control valve is disposed on the flow side below the cooler 48. The regulator 57 is used to open and close the circulation path 31 of the autonomous connection pipe portion 35 and the sub-connection pipe portion 37 to be circulated to the upstream side of the cleaning unit 41 of the blowing-side pipe portion 39.

As shown in FIGS. 3 and 4, the rear end portion of the suction side pipe portion 34 is formed as a discharge path (second gas discharge path) 49 that is connected to the side of the gas discharge portion.

As shown in FIG. 4, the discharge pipe 50 is connected to the upper end of the discharge path 49. A main discharge path 51 is formed at the flow side end portion below the discharge pipe 50.

A pipe portion is additionally connected to the flow end below the discharge pipe 50. In the pipe portion, the gas in the peripheral portion of the heat treatment device 10 is not discharged to the clean room, and is discharged to the exhaust gas treatment system of the factory or the like.

A regulator 52 as an open/close valve is provided in the main discharge path 51.

A bypass passage 53 bypassing the regulator 52 is connected to the main discharge path 51. The flow rate of the bypass passage 53 is set to be smaller than the flow rate of the main discharge passage 51.

Further, the bypass passage 53 is configured to adjust the flow rate of the bypass passage 53 by providing a flow rate adjusting device such as a flow meter or a needle valve.

As shown in FIGS. 2 to 4, the boat lifter 19 is provided with a forward screw shaft 19a that stands vertically and is rotatably supported, a motor 19b that rotates the forward screw shaft 19a forward and reverse, and a lift table 19c that screws the forward spiral. The shaft 19a is lifted and lowered with forward and reverse rotation, and the arm portion 19d is supported by the lifting table 19c, and the wafer boat 21 is provided at the front end portion via the sealing cover portion 20.

As shown in FIGS. 3 to 4, the lifter 18 includes a forward screw shaft 18a that stands vertically and is rotatably supported, a motor 18b that rotates the forward screw shaft 18a, and a lift table 18c that screws the forward screw shaft 18a. The arm portion 18d is supported by the lifting table 18c and is provided with a wafer transfer device 18A.

As shown in FIG. 4, a motor installation chamber 54 is provided directly above the suction side pipe portion 34. A motor 19b of the boat lifter 19 and a motor 18b of the lifter 18 are provided in the motor setting chamber 54. The arm of the motor setting chamber 54 is formed in a box shape of a square body, and has a volume much larger than that of the motor 19b and the motor 18b.

A communication port 56 is formed in the partition wall 55 of the isolation motor installation chamber 54 and the standby chamber 12. The communication port 56 communicates the inside of the motor installation chamber 54 with the inside of the suction side pipe portion 34.

A discharge port 58 is formed in a portion of the motor installation chamber 54 adjacent to the discharge pipe 50. The motor installation chamber 54, the communication port 56, the discharge port 58, and the discharge pipe 50 are the first gas discharge passages 59 that are connected to the upper side arm of the gas discharge portion.

As shown in FIGS. 3 and 4, a common box 60 such as a gas pipe is placed in a portion of the back surface of the casing 11 adjacent to the discharge path 49.

Further, the common box 60 is provided with a gas supply unit, an exhaust system, and the like. The gas supply unit constitutes a gas supply unit, and includes a valve that supplies gas to the gas supply pipe 29, a flow meter, and the like. The exhaust system includes a valve that exhausts gas from an exhaust pipe, a pressure gauge, and the like.

Further, compared with the cleanliness in the standby room 12, that is, the environment in which the wafer is placed, since the wafer is not placed, high cleanliness is not required in the common case 60. Therefore, compared with the frame 11, the hermeticity of the structure is much lower than that of the frame 11.

In the partition wall between the common box 60 and the discharge path 49, a plurality of (two in the present embodiment) discharge ports 61 are arranged in the vertical direction for discharging the clean air 40 in the discharge path 49, and the discharge ports 61 are arranged. The opening/closing is performed by the opening/closing means, that is, the gate valve 62.

In the partition wall 63 of the suction side pipe portion 34 and the discharge path 49, a plurality of (three in the present embodiment) discharge ports 64 are arranged in the vertical direction for discharging the clean air 40 in the suction side pipe portion 34. To the discharge path 49, an exhaust fan 65 is provided at each discharge port 61. Each of the exhaust fans 65 constitutes a forced gas exhausting means for discharging the clean air 40 to the discharge path 49, that is, a forced gas exhausting portion.

The discharge port 61 and the discharge port 64 are formed to have an opening area larger than the communication port 56, respectively.

That is, the flow path area of the second gas discharge path is formed larger than that of the first gas discharge path.

The connection portion between the discharge path 49 and the discharge pipe 50 is partitioned by a partition plate 67, and the partition plate 67 connects the first gas discharge path 59 and the second discharge path 49. Cut off.

Further, the discharge pipe 50 may be placed on the discharge path 49 without providing the partition plate 67, and the discharge path 49 may be separated from the discharge pipe 50.

As shown in FIG. 4, the heat treatment apparatus 10 is provided with a control means, that is, a controller 70 for controlling the exhaust fan 65 and the gate valve 62. The controller 70 controls the exhaust fan 65 and the gate valve 62 via the communication wiring 71.

That is, when the nitrogen gas 30 is supplied to the standby chamber 12 by the cleaning unit 41, the controller 70 is controlled by closing the discharge port 61 by the gate valve 62. Further, when the clean air 41 is supplied to the standby chamber 12 by the cleaning unit 41, the controller 70 controls the opening of the discharge port 61 by the gate valve 62, or operates the exhaust fan 65 while the gate valve 62 is being operated. The discharge port 61 is opened and controlled.

Further, the controller 70 controls the lifter 18, the boat lifter 19, the wafer transfer device 18A, the wafer carrier opener 15 and the like in addition to the control of the exhaust fan 65 and the gate valve 62. The heating unit such as the heating unit 22 is controlled to control the blower 43, the regulators 45, 47, 52, 57, and the like, and control the gas supply, exhaust, pressure, and the like of the processing chamber 25.

The action of the heat treatment apparatus having the above configuration will be described below.

As shown in FIG. 1-3, in the wafer loading step, the wafer carrying cassette 2 transferred to the mounting table of the wafer carrier opening/closing device 15 is opened by the wafer carrier opening/closing device 15. The lid portion 3 (see Fig. 1) is opened.

After the wafer carrier 2 is opened by the wafer cassette open/close device 15, the wafer 1 stored in the wafer carrier 2 is transferred by the wafer. The device 18A is transferred to the boat 21 and is being filled.

After the predetermined number of wafers 1 are loaded, the wafer boat 21 is raised by the boat lifter 19 and loaded into the processing chamber 25 (boat loading).

After the wafer boat 21 reaches the upper limit, the upper peripheral portion of the seal cover portion 20 of the wafer boat 21 is held in contact with the lower surface of the manifold 26 in a sealed state, so that the processing chamber 25 is sealed to be in an airtight state.

When the processing chamber 25 is sealed in an airtight state, the exhaust pipe 28 is exhausted to a specific degree of vacuum, and is heated by the heating unit 22 to a specific temperature.

Thereafter, a specific processing gas is supplied to the processing chamber 25 by the gas supply pipe 29.

Accordingly, the wafer 1 is subjected to a desired heat treatment (heat treatment step).

Before the wafer loading step, the standby chamber 12 and the circulation path 31 are replaced with a nitrogen gas 30 environment. Thereafter, in the wafer carrying step and the heat treatment, most of the nitrogen gas 30 is circulated to the standby chamber 12 by the circulation path 31.

That is, about half of the amount of the nitrogen gas 30 supplied to the circulation path 31 by the nitrogen gas supply pipe 46, for example, about 80% of the amount of the nitrogen gas 30 supplied to the circulation path 31 by the nitrogen gas supply pipe 46 is as follows. As shown in Fig. 2, the cleaning unit 41 of the blowing side tube portion 39 formed in the circulation pipe 32 is blown out to the standby chamber 12, and flows through a portion of the circulation path 31, that is, the standby chamber 12, and the suction port 33 is provided. It is sucked into the suction side tube portion 34.

The nitrogen gas 30 sucked into the suction side pipe portion 34 is returned to the blowing side pipe portion 39 via the main connecting pipe portion 35 and the sub connecting pipe portion 37, and is again blown out to the standby chamber 12 by the cleaning unit 41.

Thereafter, the nitrogen gas 30 repeats the above flow and circulates in the standby chamber 12 and the circulation path 31.

Further, a small amount (for example, about 15% of the amount of the nitrogen gas 30 supplied to the circulation path 31 by the nitrogen gas supply pipe 46) by the standby chamber 12 and the suction side pipe portion 34 flows into the motor installation chamber 54 via the communication port 56. The gas 30 is discharged into the bypass passage 53 through the discharge port 58 and the discharge pipe 50.

Further, a small amount (for example, about 5% of the amount of the nitrogen gas 30 supplied to the circulation path 31 by the nitrogen gas supply pipe 46) is a contact between the casing 11 or the frame 11 and the mounting plate 13 The surface or the contact surface between the casing 11 and the service door 17 is discharged to the outside of the casing 11.

At this time, the flow rate of the nitrogen gas 30 corresponding to the flow rate of the nitrogen gas 30 discharged from the gap between the bypass passage 53 and the frame body 11 is supplied by the nitrogen gas supply pipe 46.

In the circulation step of the nitrogen gas 30, the regulator 52 of the main discharge path 51 and the regulator 45 of the fresh air supply pipe 44 are closed, and the regulator 47 of the nitrogen gas supply pipe 46 and the regulator 57 located in the circulation path 31 are opened. .

After a predetermined processing time, the wafer boat 21 is lowered by the crystal boat lifter 19, and the wafer boat 21 of the processed wafer 1 is held, and is carried out to the original standby position of the standby room 12 (boat unloading) .

After the wafer boat 21 is carried out by the processing chamber 25, the processing chamber 25 is closed by the opener/closer 27.

When the wafer boat 21 holding the processed wafer 1 is carried out (the boat unloading step), the regulator 52 is opened. In this manner, the nitrogen gas 30 of the standby chamber 12 and the circulation path 31, for example, about 95% of the amount of the nitrogen gas 30 supplied to the circulation path 31 by the nitrogen gas supply pipe 46 flows into the motor installation chamber via the communication port 56. 54. The nitrogen gas 30 flowing into the motor installation chamber 54 is discharged through the discharge port 58 and the discharge pipe 50 through the main discharge path 51 and the bypass passage 53.

Further, a small amount (for example, about 5% of the amount of the nitrogen gas 30 supplied to the circulation path 31 by the nitrogen gas supply pipe 46) is a contact between the casing 11 or the frame 11 and the mounting plate 13 The joint surface or the contact surface between the casing 11 and the service door 17 is discharged to the outside of the casing 11. At this time, the flow rate of the nitrogen gas 30 corresponding to the flow rate of the nitrogen gas 30 discharged from the gap between the main discharge path 51, the bypass passage 53, and the frame body 11 is supplied by the nitrogen gas supply pipe 46.

In other words, the nitrogen gas 30 supplied to the circulation path 31 by the nitrogen gas supply pipe 46 is blown out to the standby chamber 12 by the cleaning unit 41 built into the blowing side pipe portion 39, and flows through the standby chamber 12 through the suction side. The suction port 33 of the pipe portion 34 flows into the motor installation chamber 54 through the communication port 56, and is then discharged through the discharge port 58 and the discharge pipe 50 through the gaps of the main discharge passage 51, the bypass passage 53, and the casing 11.

Circulating between the standby chambers 12, the nitrogen gas 30 is heat-treated to a high temperature, and is in contact with the wafer group 1 and the wafer boat 21 holding it, and is exchanged by heat exchange. cool down.

At this time, the nitrogen gas 30 is a fresh nitrogen gas 30 that is cooled by the nitrogen gas supply pipe 46, and the wafer group 1 and the wafer boat 21 can be cooled with high heat exchange efficiency.

Further, most of the nitrogen gas 30 that cools the wafer group 1 and the wafer boat 21 and rises in temperature flows into the motor installation chamber 54 through the communication port 56, and then passes through the discharge port 58 and the discharge pipe 50 through the main discharge path. The bypass passage 53 is directly discharged from the circulation passage 31. In this way, since the nitrogen gas 30 having a rising temperature does not pass through the cleaning unit 41 provided in the circulation path 31, the nitrogen gas 30 whose temperature rises does not raise the temperature of the cleaning unit 41.

Therefore, organic pollutants are not generated by the cleaning unit 41.

Further, the nitrogen gas 30 is brought into contact with the wafer 1 which is a high temperature, and a natural oxide film is not generated on the surface of the wafer 1.

In the boat carrying step, the regulator 52 of the main discharge path 51 and the regulator 47 of the nitrogen gas supply pipe 46 are opened, and the regulator 45 of the fresh air supply pipe 44 and the regulator 57 in the circulation path 31 are closed.

Further, in a temperature range in which the temperature rise of the circulation path 31 is small, a part of the nitrogen gas 30 having a temperature rise may be circulated to the circulation path 31.

The processed wafer 1 that has been carried out to the wafer boat 21 of the standby room 12 is picked up by the wafer boat 21 by the wafer transfer device 18A, and is stored in the empty wafer carrier 2. The empty wafer carrier 2 is previously transported to the wafer carry-in/out port 14, and the lid portion 3 is removed and opened.

After the wafer carrier 2 is processed and the wafer 1 is filled, the wafer carrier 2 is closed by the wafer carrier opener 15 mounting the lid portion 3. Thereafter, the wafer carrier 2 is transferred to another location by the wafer carry-out port 14.

The above effects are repeated as follows, and the wafer 1 is subjected to a batch process by the heat treatment apparatus 10.

However, the flow rate of the nitrogen gas 30 supplied to the standby chamber 12 is constant, and when the discharge amount of the nitrogen gas 30 discharged from the standby chamber 12 and the flow rate of the nitrogen gas 30 supplied to the standby chamber 12 are the same amount, the standby is performed. The leakage of the environment of the chamber 12 (nitrogen gas 30) causes the pressure in the standby chamber 12 to decrease.

When the pressure in the standby chamber 12 is lowered, the environment (atmosphere) outside the standby room 12 easily flows into the standby chamber 12, and the oxygen concentration in the standby chamber 12 rises. As a result, oxygen concentration management becomes difficult.

In the present embodiment, the phenomenon in which the pressure in the standby chamber 12 is lowered is prevented by the following.

In the step of transferring the nitrogen gas 30 to the circulation path 31 during the wafer loading step and the heat treatment, the same amount of nitrogen is discharged from the nitrogen gas supply pipe 46 through the gap between the bypass passage 53 and the frame 11 or the like. Gas 30. When the nitrogen gas body 30 is discharged by the discharge path 49, the main discharge path 51 is closed by the regulator 52, and the nitrogen gas body 30 is discharged through the bypass passage 53.

By preventing the pressure in the standby chamber 12 from decreasing, the external environment of the standby chamber 12 can be prevented from flowing into the standby chamber 12. Therefore, according to the embodiment, the oxygen concentration can be kept constant.

In addition, in the step of circulating the nitrogen gas 30 in the circulation path 31 during the wafer loading step and the heat treatment, the gas is also exhausted by the bypass passage 53. Precipitation or retention in the standby chamber 12 is prevented. Therefore, it is possible to prevent not only the natural oxide film but also the particles or organic substances from remaining in the standby chamber 12.

When it is not necessary to suppress the natural oxide film, it is preferable to create a single direction flow which does not circulate by the clean air 40 in the standby chamber 12 from the viewpoint of heat influence.

In this case, it is preferable that the clean air 40 is blown horizontally with respect to the wafer boat 21 by the cleaning unit 41, thereby preventing precipitation or retention of particles or organic substances in the standby chamber 12.

When it is desired to form a flow of the clean air 40 in a single direction without causing precipitation or retention in the standby chamber 12, it is necessary to cause the large-flow clean air 40 to flow into the standby chamber 12.

In the heat treatment apparatus 10 of the present embodiment, in this case, as shown in FIG. 5, the controller 70 activates the exhaust valve 65 and activates the gate valve 62 to open the discharge port 61.

The regulator 45 is opened, and the clean air supplied to the blowing side pipe portion 39 by the fresh air supply pipe 44 (see FIG. 2) is purified by the cleaning unit 41 to be clean air 40 and horizontally blown to the standby room 12 for standby. The chamber 12 flows in a horizontal single direction and is sucked into the suction side tube portion 34 through the suction port 33 of the suction side tube portion 34.

As shown in FIG. 5, the clean air 40 sucked into the suction side pipe portion 34 is horizontally forcibly discharged to the discharge path 49 by the exhaust force of a plurality of exhaust fans 65 through a plurality of discharge ports 64. The clean air 40 discharged to the discharge path 49 is horizontally discharged into the common box 60 by a plurality of discharge ports 61.

The horizontal direction of the clean air 40 in the standby room 12 flows in a single direction, and the exhaust force of the plurality of exhaust fans 65 is sufficiently increased to become a large flow rate and a laminar flow state. Therefore, the wafer 1 on the wafer boat 21 It can be cooled extremely efficiently.

Further, since the exhaust fan 65, the discharge port 64, and the discharge port 61 are provided in a plurality of vertical directions, the clean air 40 can be uniformly discharged in the vertical direction. Therefore, the clean air 40 in the standby chamber 12 flows in a single direction or evenly. Formed in the up and down direction. Therefore, the wafer 1 group on the wafer boat 21 can be uniformly cooled in the up and down direction.

Also, since it is discharged to the common box 60, the flow rate of the clean air 40 is lowered. Therefore, there is no possibility that the clean room environment around the heat treatment apparatus 10 is disturbed and the particles are caught. In addition, in the event that a large amount of gas caused by the poor sealing property of the common box 60 leaks into the clean room, the clean air 40 is not adversely affected by suffocation or the like.

Unlike the case where the nitrogen gas 30 is filled in the standby chamber 12, the clean air 40 is horizontally discharged in the standby chamber 12, and is discharged horizontally by the discharge port 64 of the exhaust fan 65 and the discharge port 61 of the common box 60. Exhaust, in this case, the heat of the wafer 1 group on the wafer boat 21 can be eliminated as soon as possible. However, at this time, if excessive positive pressure is applied, the temperature in the standby chamber 12 is likely to rise, and it is difficult to remove heat, and the wafer 1 may be oxidized.

On the other hand, in the present embodiment, the exhaust fan 65 performs forced exhaust of the clean air 40, thereby preventing excessive positive pressure in the inside of the standby chamber 12, and preventing such occurrence of defects.

The first gas is disposed in the motor setting chamber 54 on the upper side of the suction side pipe portion 34. The discharge path 59 prevents heat from remaining in the motor installation chamber 54.

According to the above embodiment, the following effects can be obtained.

(1) The nitrogen gas 30 is supplied to the standby chamber by the cleaning unit, the nitrogen gas 30 in the standby chamber 12 is discharged from the suction side pipe portion 34, and the first gas discharge path connected to the suction side pipe portion 34 from the upper side is discharged to the suction side. In this way, the nitrogen gas 30 in the tube portion 34 can circulate in the standby chamber 12, and even if the wafer is easily oxidized in the standby chamber 12, the generation of the natural oxide film can be surely prevented.

(2) The fresh air is supplied to the standby chamber 12 by the cleaning unit, the clean air in the standby chamber 12 is discharged from the suction side pipe portion 34, and the discharge port of the discharge path connected to the side of the suction side pipe portion is opened, by the discharge path The clean air in the suction side pipe portion 34 is discharged, so that the horizontal flow of the clean air can be formed in the laminar flow in the single direction in the standby chamber 12, and precipitation or retention in the standby chamber 12 can be prevented.

(3) According to the above (2), in the heat treatment which does not cause an obstacle even if a natural oxide film having a certain thickness is formed, the use of a nitrogen gas or the like can be suppressed or prevented, and the operation cost can be reduced.

(4) With the above (1) and (2), in the same heat treatment apparatus, both the nitrogen gas circulation and the clean air flow in a single direction can be achieved.

(5) In the above (4), it is possible to avoid an increase in the footprint of the heat treatment apparatus without increasing the size of the exhaust pipe portion.

(6) By arranging a plurality of exhaust fans or discharge ports in the vertical direction, the clean air can be uniformly discharged in the vertical direction. Therefore, the horizontal direction of the clean air in the standby room can be uniformly formed in the up and down direction. . Therefore, the wafer group on the wafer boat can be equally cooled in the up and down direction.

(7) The second gas discharge path connected to the side of the gas discharge unit is provided with a gate valve for opening and closing the second gas discharge path, and the second gas discharge path is opened by the gate valve, and can be discharged in a large amount by the second gas discharge path. The air is cleaned, and the second gas discharge path is closed by the gate valve, so that the inert gas can be circulated and discharged from the first discharge path. That is, a first gas discharge path mainly for discharging the inert gas and a second gas discharge path mainly for discharging the oxygen-containing gas may be separately provided.

(8) The discharge path 49 is connected to the common box. Thus, it is not necessary to newly provide the exhaust pipe portion, and the increase in the foot print of the heat treatment device can be avoided.

The present invention has been described above based on the embodiments, but the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the scope of the invention.

For example, the exhaust fan 65 and the discharge port 64 are not limited to three, and one or two or four or more may be provided.

Further, the forced gas exhausting portion such as the exhaust fan may be omitted.

6 is an opening/closing driving device of the gate valve 62 in the peripheral portion of the discharge path 49 in the longitudinal direction (long in the vertical direction), and the position between the discharge port 61 and the gate valve 62, the discharge port 64, and the exhaust fan 65. Detailed map.

6, the three discharge ports 61 and the gate valve 62, the two discharge ports 64, and the exhaust fan 65 are respectively different numbers, and the discharge port 61, the gate valve 62, the discharge port 64, and the exhaust fan 65 are provided. The height deviation is set, and the discharge port 61, the gate valve 62, the discharge port 64, and the exhaust fan 65 are arranged to be different from each other in the vertical direction.

Further, the opening/closing drive unit for opening/closing the gate valve 62, that is, the cylinder device 62A is provided between the plurality of discharge ports 64. By the action of the cylinder device 62A, the gate valve 62 can move parallel to the discharge port 61 in the vertical direction, thereby opening/closing the discharge port 61. The cylinder device 62A is connected to the center of the gate valve 62, and the thrust of the cylinder device 62A can be equally and easily transmitted to the entire area of the gate valve 62.

Further, the cylinder device 62A is controlled by the controller 70 via the communication wiring 71.

By providing the cylinder device 62A between the plurality of discharge ports 64, the operation of the gate valve 62 can be smoothed, and the arrangement of the cylinder device 62A can be facilitated.

Further, the number of the discharge port 61, the gate valve 62, the two discharge ports 64, and the exhaust fan 65 is made different, and the heights of the discharge ports 61 and the gate valve 62 and the discharge port 64 and the exhaust fan 65 are shifted. The discharge port 61, the gate valve 62, the discharge port 64, and the exhaust fan 65 are arranged to be different from each other in the vertical direction. Thus, the gate valve 62 is easily provided in the discharge path 49 of the vertical space, and the opening/closing thereof can be performed/ close. Therefore, the clean air discharged from the discharge port 64 can be discharged by the gate valve 62 as far as possible.

Further, regardless of the number of the discharge port 61 and the gate valve 62, the two discharge ports 64, and the exhaust fan 65, respectively, or one of two or more, the discharge port 61 and the gate valve 62 are provided. The installation height between the discharge port 64 and the exhaust fan 65 may be different from each other, and the discharge port 61, the gate valve 62, the discharge port 64, and the exhaust fan 65 may be arranged differently in the vertical direction. In this case, the effectiveness and discharge efficiency of the space is slightly worse than The above embodiment.

It is not limited to the configuration in which clean air is exhausted in a common box.

Although the common case 60 is provided only on the side of the discharge path 49, the present invention is not limited thereto. For example, the upper end of the common case 60 may be extended to the side of the discharge pipe 50 to increase the height of the common case 60.

The filter provided in the clean unit is used to remove particles, as long as it is in a clean form. It is preferred to provide both a form capable of removing fine particles and a form of removing organic substances.

The inert gas is not limited to the use of a nitrogen gas.

The method of operating the first gas discharge path 59 and the discharge path 49 is not limited to the above embodiment, and can be appropriately selected.

For example, in a heat treatment process in which the formation of a natural oxide film of a certain thickness does not cause an obstacle, the switching of the nitrogen gas circulation step may be performed in a wafer charging step or a heat treatment step in which the wafer group does not require forced cooling. As follows, the nitrogen gas is discharged from the first gas discharge path 59, and is discharged from the discharge path 49 by the clean air 40 in the wafer carrying step.

In the wafer loading step for forced cooling of the wafer group, in addition to the circulation of the nitrogen gas, the circulation of the clean air may be added.

In the wafer carrying step of the wafer group without forced cooling, the nitrogen gas body 30 is supplied by the nitrogen gas supply pipe 46 without opening the regulator 52, and the nitrogen gas 30 discharged from the gap between the bypass passage 53 and the frame body 11 is used. The flow rate of the nitrogen gas 30 having a corresponding flow rate is also acceptable.

Moreover, the above embodiment is an example of a batch type vertical heat treatment apparatus. Although not limited to this, for example, all of the substrate processing apparatuses such as the batch type vertical diffusion apparatus can be applied.

The first gas discharge passage that is connected to the upper side of the gas discharge portion and that discharges the nitrogen gas or the clean air in the gas discharge passage is provided, and when it is provided on the upper side, it can be preferentially discharged from the upper side of the standby chamber or the gas discharge portion. Helps miniaturization of heat treatment equipment. However, this does not prevent the first gas discharge path from being provided on the lower side of the gas discharge portion, for example.

7 and 8 show the gas supply sequence in the standby chamber, the supply amount of the nitrogen gas/clean air, the opening/closing of the regulator 57, the regulator 52, and the gate valve 62, corresponding to the oxygen concentration in the standby chamber, and the standby chamber. The sequence of the ambient temperature, the temperature of the upper surface of the casing forming the standby chamber, and the steps of the operation method for the operation are shown.

In the heat treatment step of the batch (the second batch), the heat generated during the previous batch (the first batch) is promoted, and the operation method is as shown in FIG. After the two-stage wafer boat loading step, the gate valve 62 and the regulator 52 are opened, and the regulator 57 is turned off to supply the clean air 40 to the standby chamber 12.

Then, in the middle of the heat treatment step, while closing the gate valve 62, the regulator 57 is turned on, the regulator 52 is continuously turned on, and the standby chamber 12 is supplied with 800 liters of nitrogen gas, and the oxygen concentration in the standby chamber 12 is returned to a low concentration state. (about 20ppm).

Thereafter, the regulator 52 is turned on to continue supplying the nitrogen gas.

However, in the middle of the heat treatment step, when the wafer is carried out to the standby chamber 12 at a high temperature of, for example, 700 ° C, the environment recovered before passing through the cooler 48 becomes At 60 ° C, the cooler 48 passed through the environment to become 40 ° C.

For example, when the temperature of the cooling water flowing through the cooler 48 is set to 20 to 25 ° C for heat exchange, the wafer is processed in one batch (one processing), especially in the processed wafer, because it is not completely exchanged. In the boat loading step, the nitrogen gas 30 in the casing 11 and the standby chamber 12 forming the standby chamber 12 stores heat.

In particular, when a plurality of batches (several processes are repeated), in the wafer carrying step of the processed wafer, the heat storage of the inner wall of the standby chamber 12 and the nitrogen gas 30 increases. In this way, an organic substance is generated by a cable, a lifter, an electric component, or the like provided in the vicinity of the standby room 12, and the filter is thermally deteriorated, and an organic substance is generated by a sealing member of the filter or the like.

In order to solve this problem, as shown in Fig. 7, in the heat treatment step of the second batch, the clean air 40 is supplied at a flow rate higher than the gas supply amount of the nitrogen gas 30, and the open gate valve 62 is discharged in the horizontal direction.

In this way, even if the clean air 40 has a large flow rate, precipitation does not occur in the standby chamber 12, heat can be discharged, and the standby chamber 12 can be quickly cooled.

Further, the clean air 40 system is different from the nitrogen gas body 30, and for example, air in a clean room can be used, and it is easy to set a large flow rate, and the operating cost can be reduced.

It is preferable to discharge while exhausting the exhaust fan 65. In this way, the clean air 40 can be efficiently discharged by the second gas discharge path, that is, the discharge path 49.

As shown in Fig. 7, it is assumed that the flow of the new nitrogen gas into the nitrogen gas 30 is divided into 800 liters per minute, and the flow rate of the nitrogen gas flowing into the circulation path 31 is about There is a significant difference in relative amounts for 20,000 liters per minute. Therefore, the circulation environment of the standby chamber 12 is maintained at about 40 ° C compared to the temperature of the circulating nitrogen gas of about 40 ° C, even if the temperature of the new nitrogen gas is about 20 to 25 ° C lower.

That is, in the heat treatment step from the wafer carrying step of the first batch to the second batch, only about 35 ° C is lowered, and the upper panel of the casing 11 forming the standby chamber 12 is lowered by only about 60 ° C.

However, as shown in FIG. 7, in the heat treatment step of the second batch, the clean air 40 is supplied at a flow rate (about 20,000 liters per minute) which is more than the supply amount of the nitrogen gas 30, and the open gate valve 62 is horizontally Clean air 40 is discharged. In this way, the heat stored in the casing 11 can be removed in a short time, and the environment of the standby room 12 can be lowered to room temperature.

Further, in the heat treatment step, the clean air is replaced with a nitrogen gas, and a natural oxide film is not formed on the wafer.

The second modification shown in Fig. 8 is a method for reducing the heat diffusion of the wafer cooling step of each batch, in addition to the operation of the valve of the first modification shown in Fig. 7.

As shown in FIG. 8, in the wafer cooling step, the controller 70 opens the regulator 52 while increasing the supply flow rate of the nitrogen gas 30 from 400 liters per minute to 800 liters per minute.

By this control, before the operation of the valve of the first modification, the heat and fine particles generated by the wafer loading step can be discharged from the first gas discharge path 59. Therefore, in the heat treatment step of the second batch, the heat stored in the frame 11 can be removed in a shorter time.

Further, in the first modification and the second modification, the description is made by The cooling of the standby chamber is performed by the supply of the large-flow clean air in the heat treatment step of the two batches, but is not limited thereto. For example, in the same manner as in the third batch after the third batch, the cooling of the standby chamber by the supply of the large-flow clean air may be performed. Preferably, it is carried out every other batch, and thus, the efficiency is good.

The following is a preferred embodiment.

(1) A substrate processing apparatus comprising: a processing chamber for processing a substrate; a substrate holder for holding the substrate and carried into the processing chamber; and a standby chamber provided below the processing chamber for holding the substrate holder The gas supply unit is provided on the side of the standby chamber for supplying an inert gas or an oxygen-containing gas to the standby chamber, and the gas discharge unit is provided on the side of the standby chamber facing the gas supply unit. Exchanging the inert gas or the oxygen-containing gas from the standby chamber; the first gas discharge passage is connected to the gas discharge portion for discharging the inert gas or the oxygen-containing gas in the gas discharge portion; The gas discharge path is connected to the side of the gas discharge unit for discharging the oxygen-containing gas in the gas discharge unit, and a gate valve for opening/closing the second gas discharge path.

(2) The substrate processing apparatus according to (1), wherein the second gas discharge path includes a plurality of forced gas exhausting portions for exhausting gas, and the gate valve is opened/closed between the plurality of forced gas exhausting portions. Drive unit.

(3) The substrate processing apparatus according to (1) above, comprising a gas supply path provided on the upstream side of the gas supply unit for supplying the inert gas or the oxygen-containing gas.

(4) The substrate processing apparatus according to (1) above, further comprising: a controller for controlling the gate valve, wherein the controller supplies the inert gas to the standby chamber by the first gas supply path The gate valve closes the second gas discharge path, and when the oxygen-containing gas is supplied to the standby chamber from the second gas supply path, the gate valve opens the second gas discharge path and controls the gas.

(5) The substrate processing apparatus according to (4), wherein the controller supplies the second gas in comparison with a supply amount of the inert gas supplied to the standby chamber by the first gas supply path. The way in which the supply amount of the oxygen-containing gas supplied to the standby chamber is increased is controlled.

(6) In the substrate processing apparatus according to (1), a plurality of discharge ports are provided in the lower direction of the second gas discharge path, and a plurality of the gates are provided in the vertical direction so that the plurality of discharge ports can be opened/closed, respectively. valve.

(7) In the substrate processing apparatus according to the above (6), the forced gas exhausting portion is provided at a different position from the gate valve, and is provided in a plurality of vertical directions.

(8) In the substrate processing apparatus of (2) above, a controller for controlling the forced gas exhausting portion and the gate valve, wherein the controller closes the second portion by the gate valve when the inert gas is supplied to the standby chamber by the first gas supply path When the oxygen-containing gas is supplied to the standby chamber from the second gas supply path, the gas discharge path is controlled by the gate valve opening the second gas discharge path while the forced gas exhaust unit is actuated .

(9) In the substrate processing apparatus according to (1), the first gas discharge path is connected to an upper side of the gas discharge unit.

(10) A substrate processing apparatus comprising: a processing chamber for processing a substrate; a substrate holder for holding the substrate and carried into the processing chamber; a standby chamber for waiting for the substrate holder; and a gas supply unit; Providing at least the oxygen-containing gas to the standby chamber on the side of the standby chamber; the gas discharge portion is disposed on the side of the standby chamber facing the gas supply portion, and is configured to perform at least the above-mentioned from the standby chamber An exhaust gas of oxygen gas; a gas discharge path connected to the side of the gas discharge portion for discharging the oxygen-containing gas in the gas discharge portion; and a gate valve for opening/closing the gas discharge path.

(11) The substrate processing apparatus according to (10) above, wherein the gas discharge path includes a plurality of forced gas exhaust portions for discharging The gas is provided between the plurality of forced gas exhausting portions, and the opening/closing driving portion of the gate valve is provided.

(12) A method of manufacturing a semiconductor device using the substrate processing apparatus according to (1) above, comprising at least the step of performing processing in the processing chamber while holding the substrate by the substrate holder a step of moving the substrate holder out of the processing chamber to the standby chamber while maintaining the processed substrate; and supplying the oxygen-containing gas to the standby chamber by the gas supply portion, and passing through the gas discharge portion The gate valve is opened, and the oxygen-containing gas in the standby chamber is discharged from the second gas discharge path.

(13) The method of manufacturing the semiconductor device according to (12) above, wherein the step of discharging the oxygen-containing gas is performed for a predetermined period of time in which the substrate is carried out.

(14) A method of manufacturing a semiconductor device using the substrate processing apparatus according to (10) above, comprising at least the step of performing processing in the processing chamber while holding the substrate by the substrate holder a step of moving the substrate holder out of the processing chamber to the standby chamber while maintaining the processed substrate; and supplying the oxygen-containing gas to the standby chamber by the gas supply portion, and passing through the gas discharge portion Opening the above gate valve by the above second gas The body discharge path discharges the oxygen-containing gas in the standby chamber.

(15) The method of manufacturing a semiconductor device according to (14) above, wherein the step of discharging the oxygen-containing gas is performed for a predetermined period of time in which the substrate is carried out.

(16) A method of manufacturing a semiconductor device comprising the steps of: performing processing in a processing chamber while holding a substrate by a substrate holder; and holding the substrate to be processed, and moving the substrate holder from the processing chamber a step of the standby chamber; and a predetermined period of the step of carrying out the substrate holder, wherein the oxygen supply gas is supplied to the standby chamber by the gas supply unit provided on the side of the standby chamber, and The gas supply unit is a gas discharge unit on the side of the standby chamber, and the step of discharging the oxygen-containing gas in the waiting chamber by a gas discharge path connected to the side of the gas discharge unit opened by the gate valve .

(17) A method of manufacturing a semiconductor device, comprising the steps of: supplying an inert gas or an oxygen-containing gas to the standby chamber by a gas supply unit provided on a side of the standby chamber; and moving the substrate holder holding the substrate into the processing chamber a step of waiting in the standby room; discharging the inert gas in the standby chamber through the gas discharge portion provided on the side of the standby chamber facing the gas supply portion for at least a certain period of time in the standby step a step of containing an oxygen gas; a step of discharging the inert gas in the gas discharge unit or the oxygen-containing gas by a first gas discharge path connected to the gas discharge unit, and opening a second gas discharge path connected to the side of the gas discharge unit by a gate valve a step of discharging the oxygen-containing gas in the gas discharge portion; a step of closing the second gas discharge path by the gate valve; and a step of loading the substrate holder holding the substrate into the processing chamber from the standby chamber; And a step of treating the substrate in the processing chamber.

(effect of the invention)

In the above-described means, the gas supply unit supplies the inert gas to the standby chamber, and the gas discharge unit provided on the side of the standby chamber facing the gas supply unit exhausts the inert gas in the standby chamber, and is connected by the gas discharge unit. The first gas discharge path discharges the inert gas in the first gas discharge portion, so that the inert gas can be circulated in the waiting chamber.

Further, the gas supply unit supplies the oxygen-containing gas to the standby chamber, and the gas discharge unit provided on the side of the standby chamber facing the gas supply unit exhausts the oxygen-containing gas in the standby chamber, and the gas is discharged by the gate valve. The second gas discharge path connected to the side of the unit discharges the oxygen-containing gas in the gas discharge portion from the second gas discharge path connected to the side of the gas discharge portion, so that the flow in the single direction of the oxygen-containing gas can be formed in standby. indoor.

1‧‧‧ wafer (substrate)

2‧‧‧ Wafer carrying case (wafer transfer jig)

3‧‧‧ Cover

10‧‧‧Heat treatment unit (substrate processing unit)

11‧‧‧ frame

12‧‧‧Standby room

13‧‧‧Installation board

14‧‧‧ wafer loading and exit

15‧‧‧ Wafer carrying case opener/closer

16‧‧‧Maintenance

17‧‧‧Maintenance door

18‧‧‧ Lifter

18a‧‧‧Advance screw shaft

18b‧‧‧Motor (drive unit)

18c‧‧‧lifting platform

18d‧‧‧arm

18A‧‧‧ Wafer Transfer Device

19‧‧‧Saddle boat lifter

19a‧‧‧Advance screw shaft

19b‧‧‧Motor (drive unit)

19c‧‧‧ lifting platform

19d‧‧‧ Arms

20‧‧‧ Sealing cover

21‧‧‧Crystal (substrate holder)

22‧‧‧heating unit

23‧‧‧External management

24‧‧‧Inside

25‧‧‧Processing room

26‧‧‧Management

27‧‧‧Open/closer

28‧‧‧Exhaust pipe

29‧‧‧ gas supply pipe

30‧‧‧Nitrogen

31‧‧‧Circular Road

32‧‧‧Circulation tube

33‧‧‧Inhalation

34‧‧‧Inhalation side tube

35‧‧‧Main Linkage Department

36‧‧‧Inhalation

37‧‧‧Deputy Linkage Department

38‧‧‧Blowing out

39‧‧‧Blow out the side tube

40‧‧‧Clean air (oxygen-containing gas)

41‧‧‧Clean unit (gas supply means)

42‧‧‧Filter

43‧‧‧Air blower

44‧‧‧Fresh air supply pipe (clean air supply road)

45‧‧‧Regulator

46‧‧‧Nitrogen supply pipe (inert gas supply path)

47‧‧‧Regulator

48‧‧‧ cooler

49‧‧‧Drainage path (2nd gas discharge path)

50‧‧‧Draining tube

51‧‧‧Main discharge route

52‧‧‧Regulator

53‧‧‧bypass

54‧‧‧Motor setup room

55‧‧‧ partition wall

56‧‧‧Connected

57‧‧‧Regulator

58‧‧‧Export

59‧‧‧1st gas discharge path

60‧‧‧public box

61‧‧‧Export

62‧‧‧Gate valve (open/close means)

62A‧‧‧Cylinder unit

63‧‧‧ partition wall

64‧‧‧Export

65‧‧‧Exhaust fan

67‧‧‧ separated board

70‧‧‧ Controller (control means)

71‧‧‧Communication wiring

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side sectional view showing a heat treatment apparatus according to an embodiment of the present invention.

Figure 2 is a front elevational view of a portion of the cut.

Figure 3 is a plan sectional view of the standby room.

Figure 4 is a side cross-sectional view taken along line IV-IV of Figure 3;

Fig. 5 is a side cross-sectional view corresponding to Fig. 4, showing a step of forming a flow of clean air in a single direction in a waiting room.

Figure 6 is a detailed side sectional view of the peripheral portion of the discharge path.

Fig. 7 is a flow chart showing the sequence of the first modification of the valve operation method.

Fig. 8 is a flow chart showing the sequence of the second modification of the valve operation method.

1‧‧‧ wafer (substrate)

2‧‧‧ Wafer carrying case (wafer transfer jig)

10‧‧‧Heat treatment unit (substrate processing unit)

11‧‧‧ frame

12‧‧‧Standby room

13‧‧‧Installation board

14‧‧‧ wafer loading and exit

15‧‧‧ Wafer carrying case opener/closer

16‧‧‧Maintenance

17‧‧‧Maintenance door

18‧‧‧ Lifter

18A‧‧‧ Wafer Transfer Device

18d‧‧‧arm

19‧‧‧Saddle boat lifter

19a‧‧‧Advance screw shaft

20‧‧‧ Sealing cover

21‧‧‧Crystal (substrate holder)

30‧‧‧Nitrogen

33‧‧‧Inhalation

34‧‧‧Inhalation side tube

35‧‧‧Main Linkage Department

37‧‧‧Deputy Linkage Department

38‧‧‧Blowing out

39‧‧‧Blow out the side tube

41‧‧‧Clean unit (gas supply means)

42‧‧‧Filter

43‧‧‧Air blower

49‧‧‧Drainage path (2nd gas discharge path)

60‧‧‧public box

61‧‧‧Export

62‧‧‧Gate valve (open/close means)

63‧‧‧ partition wall

64‧‧‧Export

65‧‧‧Exhaust fan

Claims (15)

A substrate processing apparatus includes: a processing chamber for processing a substrate; a substrate holder for holding the substrate and being carried into the processing chamber; and a standby chamber provided below the processing chamber for waiting for the substrate holder; The gas supply unit is provided on the side of the standby chamber for supplying an inert gas or an oxygen-containing gas to the standby chamber, and the gas discharge unit is provided on the side of the standby chamber facing the gas supply unit, and is used for The standby chamber is configured to exhaust the inert gas or the oxygen-containing gas; the first gas discharge passage is connected to the gas discharge portion for discharging the inert gas or the oxygen-containing gas in the gas discharge portion; and the second gas is discharged The road is disposed on the side of the gas discharge portion via a partition wall; the plurality of discharge ports are disposed in the partition wall and disposed in the vertical direction; and the plurality of exhaust fans are disposed in the plurality of discharge ports And discharging the oxygen-containing gas in the gas discharge unit to supply the unidirectional flow to the standby chamber; and a gate valve for opening/closing the second gas discharge Way out. The substrate processing apparatus of claim 1, wherein An opening/closing driving portion of the above-described gate valve is provided between the plurality of discharge ports. The substrate processing apparatus according to claim 1, further comprising a gas supply path provided on the upstream side of the gas supply unit for supplying the inert gas or the oxygen-containing gas. The substrate processing apparatus according to claim 1, further comprising: a controller for controlling the gate valve, wherein the controller supplies the inert gas to the standby chamber by the first gas supply path The gate valve closes the second gas discharge path, and when the oxygen-containing gas is supplied to the standby chamber from the second gas supply path, the gate valve opens the second gas discharge path and controls the gas. The substrate processing apparatus according to claim 4, wherein the controller supplies the second gas in comparison with a supply amount of the inert gas supplied to the standby chamber by the first gas supply path. The amount of supply of the oxygen-containing gas supplied to the standby chamber in the above-described standby chamber is controlled to be large. The substrate processing apparatus according to claim 1, wherein a plurality of discharge ports are provided in the lower direction of the second gas discharge path, and a plurality of the gates are provided in the vertical direction so that the plurality of discharge ports can be opened/closed, respectively. valve. The substrate processing apparatus according to claim 6, wherein the plurality of exhaust fans are disposed at different positions from the gate valve, and are provided in a plurality of positions in the vertical direction. The substrate processing apparatus according to claim 2, further comprising: a controller for controlling the plurality of exhaust fans and the gate valve, wherein the controller supplies the inert gas to the gas supply path by the first gas supply path In the standby room, the second gas discharge path is closed by the gate valve, and when the oxygen-containing gas is supplied to the standby chamber by the second gas supply path, the plurality of exhaust fans are actuated by The gate valve opens and controls the second gas discharge path. The substrate processing apparatus according to claim 1, wherein the first gas discharge path is connected to an upper side of the gas discharge unit. A substrate processing apparatus includes: a processing chamber for processing a substrate; a substrate holder for holding the substrate and being carried into the processing chamber; a standby chamber for waiting for the substrate holder; and a gas supply unit; a side of the standby chamber for supplying at least the oxygen-containing gas to the standby chamber; and a gas discharge portion provided on the side of the standby chamber facing the gas supply portion for performing at least the oxygen-containing gas from the standby chamber The exhaust gas; the gas discharge path is provided on the side of the gas discharge portion via a partition wall; and the plurality of discharge ports are disposed in the partition wall and are disposed in the vertical direction; a plurality of exhaust fans respectively disposed at the plurality of discharge ports for discharging the oxygen-containing gas in the gas discharge portion to supply a unidirectional flow to the standby chamber; and a gate valve for opening/closing the gas Discharge the road. The substrate processing apparatus according to claim 10, wherein the opening/closing driving portion of the gate valve is provided between the plurality of discharge ports. A method of manufacturing a semiconductor device using the substrate processing apparatus according to the first aspect of the invention, comprising at least the step of performing processing in the processing chamber while holding the substrate by the substrate holder a step of moving the substrate holder out of the processing chamber to the standby chamber while maintaining the processed substrate; and supplying the oxygen-containing gas to the standby chamber by the gas supply portion, and passing through the gas discharge portion The gate valve is opened, and the oxygen-containing gas in the standby chamber is discharged from the second gas discharge path. The method of manufacturing a semiconductor device according to claim 12, wherein the step of discharging the oxygen-containing gas is performed for a predetermined period of time in which the substrate is carried out. A method of manufacturing a semiconductor device using the method of manufacturing a semiconductor device of the substrate processing apparatus of claim 10, The step of performing processing in the processing chamber while holding the substrate by the substrate holder; and maintaining the processed substrate while carrying out the substrate holder from the processing chamber to the standby chamber; And the gas supply unit supplies the oxygen-containing gas to the waiting chamber, and the gas discharge unit opens the gate valve, and the second gas discharge path discharges the oxygen-containing gas in the waiting chamber. The method of manufacturing a semiconductor device according to claim 14, wherein the step of discharging the oxygen-containing gas is performed for a predetermined period of time in which the substrate is carried out.