KR102721924B1 - Apparatus for forming organic film, and manufacturing method of organic film - Google Patents

Abstract

[Task] The purpose is to provide an organic film forming device and an organic film manufacturing method capable of reducing the cost of cooling a work on which an organic film has been formed and also maintaining the quality of the organic film.
[Solution] An organic film forming device according to an embodiment comprises: a chamber capable of maintaining an atmosphere pressured lower than atmospheric pressure; an exhaust section capable of exhausting the interior of the chamber; a processing region in which a substrate, a workpiece having a solution including an organic material applied to an upper surface of the substrate and a solvent are supported; a heating section provided facing the workpiece supported in the processing region; a cooling section supplying a cooling gas to the heating section; and a controller controlling the heating section, the exhaust section, and the cooling section. The cooling section has a first gas supply path for supplying a first cooling gas that is difficult to react with the heated workpiece to the interior of the heating section; a second gas supply path for supplying a second cooling gas to the interior of the heating section; a common section in which the first supply path and the second supply path are shared; and a first valve for selectively supplying the first cooling gas supplied by the first supply path and the second cooling gas supplied by the second supply path to the common section. The controller supplies a first cooling gas to the heating unit when the workpiece has a temperature higher than a threshold value, supplies a second cooling gas to the heating unit when the workpiece has a temperature lower than the threshold value, starts removing the workpiece that has been processed from the chamber, then loads a workpiece to be processed next into the chamber, and supplies the first cooling gas into the chamber until the workpiece to be processed next is heated by at least one of the first heating unit and the second heating unit.

Description

{APPARATUS FOR FORMING ORGANIC FILM, AND MANUFACTURING METHOD OF ORGANIC FILM}

An embodiment of the present invention relates to an organic film forming device and a method for manufacturing an organic film.

An organic film forming device comprises, for example, a chamber capable of maintaining an atmosphere lower than atmospheric pressure, and a heater installed inside the chamber to heat a workpiece. This organic film forming device forms an organic film by heating a substrate to which a solution containing an organic material and a solvent has been applied in an atmosphere lower than atmospheric pressure, and evaporating the solvent contained in the solution (for example, see Patent Document 1).

The substrate on which the organic film has been formed is taken out from the inside of the chamber where the processing was performed, and returned to the next process, etc. If the organic film is formed by heating, the temperature of the substrate increases, so it is difficult to take out or return a substrate at a high temperature from the chamber. In addition, if taken out at a high temperature, there is a possibility that the organic film will be oxidized and will not be able to satisfy its function. Therefore, the substrate must be cooled.

In this case, a method of cooling the substrate by supplying a cooling gas into the chamber and blowing the cooling gas onto the substrate is considered. However, when forming an organic film, processing at a very high temperature of about 250°C to 600°C is required. Therefore, the amount of cooling gas consumed until the temperature at which the substrate can be returned becomes enormous. In addition, an organic film at about 250°C to 600°C is highly reactive. Therefore, if oxygen is included in the cooling gas, the organic film will be oxidized. In order to prevent oxidation of the organic film, if an inert gas is continuously used as a cooling gas during cooling, the cost also increases.

Therefore, there is a demand for the development of a technology that can reduce the cost of cooling a work on which an organic film has been formed and also maintain the quality of the organic film.

Patent Document 1: Japanese Patent Publication No. 2019-184229

The present invention aims to provide an organic film forming device and an organic film manufacturing method capable of reducing the cost of cooling a work on which an organic film is formed and maintaining the quality of the organic film.

An organic film forming device according to an embodiment comprises: a chamber capable of maintaining an atmosphere pressured lower than atmospheric pressure; an exhaust section capable of exhausting the interior of the chamber; a processing region in which a substrate, a workpiece having a solution including an organic material applied to an upper surface of the substrate and a solvent are supported; a heating section provided facing the workpiece supported in the processing region; a cooling section supplying a cooling gas to the heating section; and a controller controlling the heating section, the exhaust section, and the cooling section. The cooling section has a first gas supply path for supplying a first cooling gas that is difficult to react with the heated workpiece to the interior of the heating section; a second gas supply path for supplying a second cooling gas to the interior of the heating section; a common section in which the first supply path and the second supply path are shared; and a first valve for selectively supplying the first cooling gas supplied by the first supply path and the second cooling gas supplied by the second supply path to the common section. The controller supplies a first cooling gas to the heating unit when the workpiece has a temperature higher than a threshold value, and supplies a second cooling gas to the heating unit when the workpiece has a temperature lower than the threshold value, and starts to remove the workpiece that has been processed from the chamber, and then loads a workpiece to be processed next into the chamber, and supplies the first cooling gas into the chamber until the workpiece to be processed next is heated by at least one of the first heating unit and the second heating unit.

According to an embodiment of the present invention, an organic film forming device and an organic film manufacturing method capable of reducing the cost of cooling a work on which an organic film is formed and also maintaining the quality of the organic film are provided.

Fig. 1 is a schematic perspective view illustrating an organic film forming device according to the present embodiment.
Figure 2 is a graph illustrating the processing process of the work and the supply timing of cooling gas.
Fig. 3 is a schematic cross-sectional view illustrating an organic film forming device according to the present embodiment.
Fig. 4 is a schematic perspective view illustrating an organic film forming device according to another embodiment.
Fig. 5 is a schematic perspective view illustrating an organic film forming device according to another embodiment.
Fig. 6 is a schematic cross-sectional view illustrating an organic film forming device according to another embodiment.

Hereinafter, embodiments will be described with reference to the drawings. In addition, identical components in each drawing are given the same reference numerals and detailed descriptions are omitted as appropriate.

Fig. 1 is a schematic perspective view illustrating an organic film forming device (1) according to the present embodiment.

Fig. 3 is a schematic cross-sectional view illustrating an organic film forming device (1) according to the present embodiment.

Meanwhile, the X direction, Y direction, and Z direction in Fig. 1 represent three directions that are orthogonal to each other. The up-down direction in this specification may be the Z direction. In addition, in order to avoid clutter, Fig. 3 is drawn by omitting elements, etc., installed inside the chamber (10).

The work (100) before forming the organic film has a substrate and a solution applied to the upper surface of the substrate.

The substrate may be, for example, a glass substrate or a semiconductor wafer. However, the substrate is not limited to those exemplified.

The solution contains, for example, an organic material and a solvent. The organic material is not particularly limited as long as it can be dissolved by the solvent. The solution can be, for example, a varnish containing polyamic acid. However, the solution is not limited to the examples. In addition, it also includes a liquid that is plasticized and in a semi-hardened state (a state that does not flow).

As shown in Fig. 1, the organic film forming device (1) is provided with, for example, a chamber (10), an exhaust section (20), a processing section (30), a cooling section (40), and a controller (60).

The controller (60) is equipped with, for example, a computational unit such as a CPU (Central Processing Unit) and a memory unit such as a memory. The controller (60) can be, for example, a computer. The controller (60) controls the operation of each element installed in the organic film forming device (1) based on a control program stored in the memory unit.

For example, the controller (60) controls the exhaust unit (20) and the heater (32a) installed in the organic film forming device (1). The controller (60) controls the exhaust unit (20) to apply power to the heater (32a) after the internal pressure of the chamber (10) becomes lower than a predetermined value. For example, the controller (60) can control the exhaust unit (20) to apply power to the heater (32a) after the internal pressure of the chamber (10) becomes a pressure at which the oxygen concentration within the chamber becomes lower than a predetermined concentration of 100 ppm.

The chamber (10) has a sealed structure capable of maintaining an atmosphere that is less pressurized than atmospheric pressure. The chamber (10) is box-shaped. The external shape of the chamber (10) is not particularly limited. The external shape of the chamber (10) can be, for example, a rectangular parallelepiped. The chamber (10) can be formed of, for example, a metal such as stainless steel. In addition, an oxygen concentration meter (21c) for detecting the oxygen concentration is installed in the chamber (10).

The chamber (10) has a main body (10a), a door (13), and a cover (15).

In the Y direction, a flange (11) can be installed at one end of the main body (10a). A sealing material (12) such as an O-ring can be installed in the flange (11). The opening (11a) on the side where the flange (11) of the chamber (10) is formed can be opened and closed by a door (13). By a driving device (not shown), the door (13) is pressed against the flange (11) (sealing material (12)), so that the opening (11a) of the chamber (10) is closed so as to be airtight. By isolating the door (13) from the flange (11) by a driving device (not shown), the opening (11a) of the chamber (10) is released, and the work (100) can be loaded or unloaded through the opening (11a).

In the Y direction, a flange (14) can be installed on the other end of the main body (10a). A sealing material (12) such as an O-ring can be installed on the flange (14). The opening on the side where the flange (14) of the chamber (10) is installed can be opened and closed by a cover (15). For example, the cover (15) can be detachably installed on the flange (14) using a fastening member such as a screw. When performing maintenance, etc., the opening on the side where the flange (14) of the chamber (10) is installed is exposed by removing the cover (15).

A cooling unit (16) can be installed on the outer wall of the chamber (10) and the outer surface of the door (13). A cooling water supply unit (not shown) is connected to the cooling unit (16). The cooling unit (16) can be, for example, a water jacket. If the cooling unit (16) is installed, the temperature of the outer wall of the chamber (10) or the temperature of the outer surface of the door (13) can be suppressed from rising above a predetermined temperature.

The exhaust section (20) exhausts the interior of the chamber (10). The exhaust section (20) has, for example, a first exhaust section (21), a second exhaust section (22), and a third exhaust section (23).

The first exhaust section (21) is connected to an exhaust port (17) installed, for example, on the bottom surface of the chamber (10).

The first exhaust unit (21) has, for example, an exhaust pump (21a) and a pressure control unit (21b).

The exhaust pump (21a) can be an exhaust pump that performs rough exhaust from atmospheric pressure to a predetermined pressure. Therefore, the exhaust pump (21a) has a larger exhaust volume than the exhaust pump (22a) described later. The exhaust pump (21a) can be, for example, a dry vacuum pump.

The pressure control unit (21b) is installed, for example, between the exhaust port (17) and the exhaust pump (21a). The pressure control unit (21b) controls the internal pressure of the chamber (10) to a predetermined pressure based on the output of a vacuum gauge (not shown) or the like that detects the internal pressure of the chamber (10). The pressure control unit (21b) can be, for example, an APC (Auto Pressure Controller).

Meanwhile, a cold trap (24) is installed between the exhaust port (17) and the pressure control unit (21b) to trap the exhausted sublimed product. In addition, a valve (25) is installed between the exhaust port (17) and the cold trap (24). The valve (25) is a valve for dividing the first exhaust unit (21) and the chamber (10) in the cooling process described later.

The second exhaust section (22) is connected to an exhaust port (18) installed, for example, on the bottom surface of the chamber (10). Meanwhile, in this embodiment, two exhaust ports (18) are installed, but one or three or more may be installed.

The second exhaust unit (22) has, for example, an exhaust pump (22a) and a pressure control unit (22b).

The exhaust pump (22a) performs exhaust to a lower predetermined pressure after the rough exhaust by the exhaust pump (21a). The exhaust pump (22a) has an exhaust capability capable of exhausting to, for example, a high vacuum molecular flow region. For example, the exhaust pump (22a) can be a turbo molecular pump (TMP: Turbo Molecular Pump) or the like.

The pressure control unit (22b) is installed, for example, between the exhaust port (18) and the exhaust pump (22a). The pressure control unit (22b) controls the internal pressure of the chamber (10) to a predetermined pressure based on the output of a vacuum gauge (not shown) that detects the internal pressure of the chamber (10). The pressure control unit (22b) can be, for example, an APC. Meanwhile, a cold trap (24) and a valve (25) can be installed between the exhaust port (18) and the pressure control unit (21b), similarly to the first exhaust unit (21).

The third exhaust section (23) is connected between the exhaust port (18) and the valve (25) of the second exhaust section (22). The third exhaust section (23) is connected to the exhaust system of the factory. The third exhaust section (23) can be made of pipe made of, for example, stainless steel. The third exhaust section has a valve (25) installed between the exhaust port (18) and the exhaust system of the factory.

The processing unit (30) has, for example, a frame (31), a heating unit (32), a support unit (33), a crack unit (34), a crack plate support unit (35), and a cover (36).

Inside the processing unit (30), a processing area (30a) and a processing area (30b) are installed. The processing areas (30a, 30b) serve as spaces for processing the work (100). The work (100) is supported inside the processing areas (30a, 30b). The processing area (30b) is installed above the processing area (30a). In addition, although the case where two processing areas are installed is exemplified, it is not limited to this. Only one processing area may be installed, or three or more processing areas may be installed. In the present embodiment, the case where two processing areas are installed is exemplified as an example, but the cases where one processing area and three or more processing areas are installed can be considered equally.

The processing areas (30a, 30b) are installed between the heating sections (32) and the heating sections (32). The processing areas (30a, 30b) are surrounded by a crack section (34) (upper crack plate (34a), lower crack plate (34b), side crack plate (34c), side crack plate (34d)).

As described below, the crack section (34) is composed of a plurality of crack plates. Therefore, the crack section (34) is not a sealed structure. Therefore, when the pressure in the space between the inner wall of the chamber (10) and the treatment section (30) is reduced, the inner space of the treatment area (30a, 30b) is also reduced.

If the pressure in the space between the inner wall of the chamber (10) and the processing section (30) is reduced, heat emitted to the outside from the processing area (30a, 30b) can be suppressed. That is, heating efficiency or heat storage efficiency can be improved. Therefore, the power applied to the heater (32a) described later can be reduced. In addition, if the power applied to the heater (32a) can be reduced, the temperature of the heater (32a) can be suppressed from becoming higher than a predetermined temperature, so the life of the heater (32a) can be extended.

The frame (31) has a skeletal structure made of thin and long plates or shaped steel. The external shape of the frame (31) can be the same as the external shape of the chamber (10). The external shape of the frame (31) can be, for example, a rectangular parallelepiped.

A plurality of heating units (32) are installed. The heating units (32) can be installed in the lower part of the processing areas (30a, 30b) and in the upper part of the processing areas (30a, 30b). The heating unit (32) installed in the lower part of the processing areas (30a, 30b) becomes a lower heating unit (equivalent to an example of the second heating unit). The heating unit (32) installed in the upper part of the processing areas (30a, 30b) becomes an upper heating unit (equivalent to an example of the first heating unit). The lower heating unit faces the upper heating unit. On the other hand, when a plurality of processing areas are installed so as to overlap in the vertical direction, the upper heating unit installed in the lower processing area can be used in combination with the lower heating unit installed in the upper processing area.

The heating unit (32) is installed inside the chamber (10) and heats the work (100).

For example, the lower surface (back surface) of the work (100) supported in the processing area (30a) is heated by a heating unit (32) installed at the lower portion of the processing area (30a). The upper surface (surface) of the work (100) supported in the processing area (30a) is heated by a heating unit (32) used by both the processing area (30a) and the processing area (30b).

The lower surface (back surface) of the work (100) supported in the processing area (30b) is heated by a heating unit (32) shared by the processing area (30a) and the processing area (30b). The upper surface (surface) of the work (100) supported in the processing area (30b) is heated by a heating unit (32) installed in the upper portion of the processing area (30b).

Each of the plurality of heating units (32) has at least one heater (32a) and a pair of holders (32b). Meanwhile, the following describes a case where a plurality of heaters (32a) are installed.

The heater (32a) is rod-shaped and extends in the Y direction between a pair of holders (32b). A plurality of heaters (32a) can be installed side by side in the X direction. A plurality of heaters (32a) can be installed at equal intervals, for example. The heater (32a) can be, for example, a sheath heater, a far-infrared heater, a far-infrared lamp, a ceramic heater, a cartridge heater, etc. In addition, various heaters can be covered with a quartz cover.

Meanwhile, in this specification, various heaters covered with quartz covers are also referred to as "rod-shaped heaters." In addition, there is no limitation on the cross-sectional shape of the "rod-shaped" and, for example, a cylindrical shape or a rectangular prism shape is also included.

In addition, the heater (32a) is not limited to the one exemplified. For example, the heater (32a) may be one that utilizes thermal energy by radiation.

The specifications, number, spacing, etc. of the plurality of heaters (32a) in the upper heating section and the lower heating section can be appropriately determined according to the composition of the solution to be heated (heating temperature of the solution), the size of the work (100), etc. The specifications, number, spacing, etc. of the plurality of heaters (32a) can be appropriately determined by conducting simulations or experiments.

In addition, the space where the plurality of heaters (32a) are installed is surrounded by the holder (32b), the upper crack plate (34a), the lower crack plate (34b), the side crack plate (34c), and the side crack plate (34d). Therefore, by supplying cooling gas from the cooling unit (40) to the space where the plurality of heaters (32a) are installed, the plurality of heaters (32a), the upper crack plate (34a), the lower crack plate (34b), the side crack plate (34c), and the side crack plate (34d) can be cooled. Meanwhile, a gap is formed between the upper crack plates (34a) and between the lower crack plates (34b). Therefore, a part of the cooling gas supplied from the cooling unit (40) described later to the space where the plurality of heaters (32a) are installed flows into the processing region (30a) or the processing region (30b).

A pair of holders (32b) extend in the X direction (e.g., the longitudinal direction of the processing regions (30a, 30b)). The pair of holders (32b) face each other in the Y direction. One holder (32b) is fixed to an end surface of the frame (31) on the door (13) side. The other holder (32b) is fixed to an end surface of the frame (31) on the opposite side to the door (13) side. The pair of holders (32b) can be fixed to the frame (31) using, for example, a fastening member such as a screw. The pair of holders (32b) maintain a non-heating portion near the end of the heater (32a). The pair of holders (32b) can be formed of, for example, a thin and long metal plate or shaped steel. There is no particular limitation on the material of the pair of holders (32b), but it is preferable to use a material having heat resistance and corrosion resistance. The material of the pair of holders (32b) can be, for example, stainless steel.

The support member (33) is installed inside the chamber (10) and supports the work (100). For example, the support member (33) supports the work (100) between the upper heating member and the lower heating member. A plurality of support members (33) can be installed. The plurality of support members (33) are installed at the lower part of the processing area (30a) and the lower part of the processing area (30b). The plurality of support members (33) can be made in a rod shape.

One end (upper end) of the plurality of support members (33) contacts the lower surface (back surface) of the work (100). Therefore, it is preferable that the shape of one end of the plurality of support members (33) be a hemisphere or the like.

The work (100) is heated by heat energy by radiation in an atmosphere with a pressure lower than atmospheric pressure. Therefore, the distance from the upper heating unit to the upper surface of the work (100) and the distance from the lower heating unit to the lower surface of the work (100) are distances at which heat energy by radiation can reach the work (100).

The other end (lower end) of the plurality of support members (33) can be fixed to, for example, a plurality of bar-shaped members or plate-shaped members spanning between a pair of frames (31).

The number, arrangement, spacing, etc. of the plurality of supports (33) can be appropriately changed depending on the size or rigidity (bending) of the work (100).

The material of the plurality of support members (33) is not particularly limited, but it is preferable to use a material having heat resistance and corrosion resistance. The material of the plurality of support members (33) can be, for example, stainless steel.

The crack portion (34) has a plurality of upper crack plates (34a) (corresponding to an example of the first crack plate), a plurality of lower crack plates (34b) (corresponding to an example of the second crack plate), a plurality of side crack plates (34c), and a plurality of side crack plates (34d). The plurality of upper crack plates (34a), the plurality of lower crack plates (34b), the plurality of side crack plates (34c), and the plurality of side crack plates (34d) are plate-shaped.

A plurality of upper cracking plates (34a) are installed on the lower heating section side (work (100) side) of the upper heating section. The plurality of upper cracking plates (34a) are installed in isolation from the plurality of heaters (32a). The plurality of upper cracking plates (34a) are installed side by side in the X direction. A gap is formed between the plurality of upper cracking plates (34a). As described above, the pressure of the space of the processing area (30a, 30b) can be reduced through this gap.

A plurality of lower crack plates (34b) are installed on the upper heating section side (work (100) side) in the lower heating section. The plurality of lower crack plates (34b) are installed in isolation from the plurality of heaters (32a). The plurality of lower crack plates (34b) are installed side by side in the X direction. A gap is formed between the plurality of lower crack plates (34b). As described above, the pressure in the space of the processing area (30a, 30b) can be reduced through this gap.

The side crack plates (34c) are installed on each side of the processing areas (30a, 30b) in the X direction. The side crack plates (34c) can be installed on the inside of the cover (36). In addition, as described above, a gap is formed between the side crack plates (34c) and the upper crack plate (34a) or the lower crack plate (34b). The pressure in the space of the processing areas (30a, 30b) can be reduced through this gap.

The side crack plates (34d) are installed on each side of the processing areas (30a, 30b) in the Y direction. The side crack plates (34d) installed on the door (13) side can be installed on the door (13) with a gap from the cover (36). The side crack plates (34d) installed on the cover (15) side can be installed on the inside of the cover (36). In addition, as described above, the side crack plates (34d) have a gap formed between them and the upper crack plate (34a) or the lower crack plate (34b). The pressure in the space of the processing areas (30a, 30b) can be reduced through this gap.

In the present embodiment, the gaps formed between the upper crack plates (34a) and between the lower crack plates (34b), etc., are formed to be larger than the gaps formed between the upper crack plate (34a) (lower crack plate (34b)) and the side crack plate (34c), and between the upper crack plate (34a) (lower crack plate (34b)) and the side crack plate (34d). The reason for this will be described later.

As described above, the plurality of heaters (32a) are rod-shaped and are installed side by side at a predetermined interval. When the work (100) is directly heated using the plurality of rod-shaped heaters (32a), the temperature distribution within the surface of the heated work (100) changes.

If there is a change in the temperature distribution within the work (100), there is a concern that the quality of the formed organic film may deteriorate. For example, there is a concern that bubbles may occur in the area where the temperature is high, or that the composition of the organic film may change in the area where the temperature is high.

In the organic film forming device (1) according to the present embodiment, a plurality of upper cracking plates (34a) and a plurality of lower cracking plates (34b) described above are installed. Therefore, heat radiated from a plurality of heaters (32a) is incident on a plurality of upper cracking plates (34a) and a plurality of lower cracking plates (34b), and is radiated toward a work (100) while propagating in the surface direction inside them. As a result, it is possible to suppress fluctuations in the surface distribution of the temperature of the work (100), and further, it is possible to improve the quality of the formed organic film.

Since the plurality of upper crack plates (34a) and the plurality of lower crack plates (34b) transmit the incident heat in the surface direction, it is preferable that these materials be made of a material with high thermal conductivity. The plurality of upper crack plates (34a) and the plurality of lower crack plates (34b) can be made of, for example, aluminum, copper, stainless steel, etc. On the other hand, when using a material that is easily oxidized, such as aluminum or copper, it is preferable to form a layer containing a material that is difficult to oxidize on the surface.

A portion of the heat radiated from the plurality of upper crack plates (34a) and the plurality of lower crack plates (34b) is directed to the side of the processing area. Therefore, the aforementioned side crack plates (34c, 34d) are installed on the side of the processing area. The heat incident on the side crack plates (34c, 34d) is transmitted in the surface direction through the side crack plates (34c, 34d), and a portion of it is radiated toward the work (100). Therefore, the heating efficiency of the work (100) can be improved.

The material of the side crack plates (34c, 34d) can be the same as the material of the upper crack plate (34a) and the lower crack plate (34b) described above.

Meanwhile, in the above, a case in which a plurality of upper crack plates (34a) and a plurality of lower crack plates (34b) are installed side by side in the X direction has been exemplified, but at least one of the upper crack plate (34a) and the lower crack plate (34b) may be made of a single plate-shaped member.

A plurality of crack plate supports (35) are installed in parallel in the X direction. The crack plate supports (35) can be installed directly below the upper crack plates (34a). The plurality of crack plate supports (35) can be fixed to a pair of holders (32b) using fastening members such as screws. The adjacent crack plate supports (35) removably support both ends of the upper crack plate (34a). Meanwhile, the plurality of crack plate supports (35) that support the plurality of lower crack plates (34b) can also have the same configuration.

The cover (36) is plate-shaped and covers the upper surface, lower surface, and side surface of the frame (31). That is, the inside of the frame (31) is covered by the cover (36). However, the cover (36) on the door (13) side can be installed on the door (13), for example.

The cover (36) surrounds the processing area (30a, 30b), but a gap is formed at the boundary between the upper and side surfaces of the frame (31), the boundary between the side and bottom surfaces of the frame (31), and near the door (13).

In addition, the covers (36) installed on the upper and lower surfaces of the frame (31) are divided into multiple parts. In addition, gaps are formed between the divided covers (36). That is, the internal space of the processing section (30) (processing area (30a), processing area (30b)) is connected to the internal space of the chamber (10) through these gaps. Therefore, the pressure of the processing area (30a, 30b) can be made equal to the pressure of the space between the inner wall of the chamber (10) and the cover (36). The cover (36) can be formed of, for example, stainless steel.

The cooling unit (40) supplies cooling gas to the area where the heating unit (32) is installed. For example, the cooling unit (40) cools the crack section (34) surrounding the processing area (30a, 30b) by the cooling gas (G), and indirectly cools the work (100) in a high-temperature state by the cooled crack section (34). In addition, for example, the cooling unit (40) can directly cool the work (100) in a high-temperature state by supplying cooling gas to the work (100) from the gap between the upper crack plates (34a) or the gap between the lower crack plates (34b).

That is, the cooling unit (40) can cool the work (100) indirectly and directly.

The cooling unit (40) has, for example, a first gas supply path (40a) and a second gas supply path (40b).

First, the first gas supply path (40a) will be described. The first gas supply path (40a) supplies cooling gas (G1) to an area where a heating unit (32) is installed in a cooling process described later. The first gas supply path (40a) has a nozzle (41), a gas source (42), a gas control unit (43), and a switching valve (54).

As shown in Fig. 1, the nozzle (41) can be connected to a space where a plurality of heaters (32a) are installed. The nozzle (41) can be attached to a side crack plate (34c) or a frame (31), for example, by penetrating the cover (36). A plurality of nozzles (41) can be installed in the Y direction (see Fig. 3). Meanwhile, the number and arrangement of the nozzles (41) can be appropriately changed. For example, in the X direction, the nozzle (41) can be installed on one side of the processing section (30), or the nozzles (41) can be installed on both sides of the processing section (30). For example, a plurality of nozzles (41) can be installed side by side in the Y direction.

The gas source (42) supplies cooling gas (G1) corresponding to the first cooling gas to the nozzle (41). The gas source (42) may be, for example, a high-pressure gas cylinder, factory piping, etc. In addition, a plurality of gas sources (42) may be installed.

It is preferable that the cooling gas (G1) be a gas that is difficult to react with the heated work (100). The cooling gas (G1) can be, for example, nitrogen gas, a rare gas, etc. The rare gas is, for example, argon gas or helium gas. If the cooling gas (G1) is nitrogen gas, the operating cost can be reduced. Since the thermal conductivity of helium gas is high, if helium gas is used as the cooling gas (G1), the cooling time can be shortened.

The temperature of the cooling gas (G1) can be, for example, room temperature (e.g., 25°C) or lower.

A gas control unit (43) is installed between the nozzle (41) and the gas source (42). The gas control unit (43) can control, for example, at least one of the supply and stop of cooling gas, or the flow rate and flow rate of cooling gas.

In addition, the timing of supply of the cooling gas (G1) can be set after the heat treatment for the work (100) is completed. Meanwhile, the completion of the heat treatment can be set after the temperature at which the organic film is formed is maintained for a predetermined time.

The switching valve (54) is a valve (equivalent to an example of the first valve) that connects the first gas supply path (40a) and the second gas supply path (40b) and enables selection of supplying either the cooling gas (G1) or the cooling gas (G2) to the area where the heating unit (32) is installed. The switching valve (54) is installed between the nozzle (41) and the gas control unit (43) and outside the chamber (10).

Next, the second gas supply path (40b) will be described. The second gas supply path (40b) is installed to supply a cooling gas (G2) different from the cooling gas (G1) to the area where the heating unit (32) is installed in the cooling process. As a result, the work (100) cooled to a temperature that is a threshold value by the supply of the cooling gas (G1) is cooled by changing the cooling gas (G1).

The second gas supply path (40b) has, for example, a nozzle (41), a gas source (52), a gas control unit (53), and a switching valve (54). In this case, the second gas supply path (40b) is connected to the first gas supply path (40a) through the switching valve (54).

The gas source (52) supplies cooling gas (G2) corresponding to the second cooling gas to a plurality of nozzles (41). The gas source (52) may be, for example, a high-pressure gas cylinder, factory piping, etc. In addition, a plurality of gas sources (52) may be installed.

The cooling gas (G2) can be, for example, clean dry air (CDA). If the cooling gas (G2) is clean dry air, it is possible to reduce operating costs. In addition, for example, it is possible to introduce outside air into the clean room through a filter from the factory piping.

The temperature of the cooling gas (G2) can be, for example, room temperature (e.g., 25°C).

The gas control unit (53) is installed between the switching valve (54) and the gas source (52). The gas control unit (53) can control, for example, the supply of the cooling gas (G2) and the stoppage of the supply. In addition, the gas control unit (53) can also control, for example, at least one of the flow rate and the flow rate of the cooling gas (G2). The flow rate or the flow rate of the cooling gas (G2) can be appropriately changed according to the size of the chamber (10), or the shape, number, and arrangement of the nozzles (41). The flow rate or the flow rate of the cooling gas (G2) can be appropriately obtained by, for example, conducting an experiment or simulation.

The pipe connecting the switching valve (54) and the nozzle (41) is a common part of the first gas supply path (40a) and the second gas supply path (40b), and hereinafter, this pipe is called a common part.

Next, the operation of the organic film forming device (1) is exemplified.

Figure 2 is a graph for illustrating the processing process of work (100).

As shown in Fig. 2, the organic film formation process includes a work loading process, a temperature increasing process, a heat treatment process, a cooling process, and a work removal process.

First, in the work-in process, the opening/closing door (13) is isolated from the flange (11), and the work (100) is brought into the internal space of the chamber (10). Simultaneously with the work-in process, a cooling gas (G1) is supplied to the internal space of the chamber (10) from the first gas supply path (40a). When the work (100) is brought into the internal space of the chamber (10), the internal space of the chamber (10) is depressurized to a predetermined pressure by the exhaust unit (20).

When the internal space of the chamber (10) is decompressed to a predetermined pressure, power is applied to the heater (32a) by the controller (60). Then, as shown in FIG. 2, the temperature of the work (100) increases. The process in which the temperature of the work (100) increases is called a temperature-raising process. In the present embodiment, the temperature-raising process is performed twice (temperature-raising processes (1), (2)). Meanwhile, the predetermined pressure may be a pressure at which the polyamic acid in the solution does not react with the oxygen remaining in the internal space of the chamber (10) and is not oxidized. The predetermined pressure may be, for example, 1×10 ^-2 to 100 Pa. That is, exhaust from the second exhaust section (22) is not necessarily required, and when the internal space of the chamber (10) reaches a pressure within the range of 10 to 100 Pa after exhaust from the first exhaust section (21) starts, heating of the work (100) by the heating section (32) may start.

After the temperature rising process, a heat treatment process is performed. The heat treatment process is a process of maintaining a predetermined temperature for a predetermined time. In the present embodiment, a heat treatment process (1) and a heat treatment process (2) can be set.

The heat treatment process (1) can be, for example, a process of heating the work (100) at a first temperature for a predetermined time to discharge moisture or gas contained in the solution. The first temperature can be, for example, 100°C to 200°C.

By performing the heat treatment process (1), it is possible to prevent moisture or gas contained in the solution from being included in the finished organic film. Meanwhile, depending on the components of the solution, etc., the first heat treatment process may be performed multiple times by changing the temperature, or the first heat treatment process may be omitted.

The heat treatment process (2) is a process of forming an organic film by maintaining a substrate (work (100)) to which a solution is applied at a predetermined pressure and temperature (second temperature) for a predetermined time. The second temperature may be a temperature at which imidization occurs, and may be, for example, 300°C or higher. In the present embodiment, the heat treatment process (2) is performed at 400°C to 600°C in order to obtain an organic film having a high degree of molecular chain filling.

The cooling process is a process for lowering the temperature of the work (100) on which the organic film is formed. In the present embodiment, it is performed after the heat treatment process (2). In the cooling process, when the temperature of the work (100) is higher than the threshold value, a cooling gas (G1) is supplied from the first gas supply path (40a), and when the temperature of the work (100) becomes lower than the threshold value, a cooling gas (G2) is supplied from the second gas supply path (40b). Meanwhile, the temperature (threshold value) for switching from the cooling gas (G1) to the cooling gas (G2) varies depending on the material, and is therefore appropriately set. The threshold value is, for example, a temperature within the range of 150°C to 250°C. The work (100) is cooled to a temperature at which it can be taken out. For example, when the temperature of the work (100) to be taken out is room temperature, it is easy to take out the work (100). However, if the temperature of the work (100) is set to room temperature every time the work (100) is taken out, the time required to raise the temperature of the next work (100) becomes longer. In other words, there is a concern that productivity may decrease. The temperature of the work (100) taken out may be, for example, 50°C to 120°C. This take-out temperature is set as the third temperature.

The controller (60) closes the valve (25) of the first exhaust section (21). Then, by controlling the cooling section (40), the temperature of the work (100) is indirectly and directly lowered by supplying cooling gas (G1) or cooling gas (G2) to the space where a plurality of heaters (32a) are installed.

Therefore, the gaps formed between the upper crack plates (34a) and between the lower crack plates (34b), etc., are larger than the gaps formed between the upper crack plate (34a) (lower crack plate (34b)) and the side crack plate (34c), and between the upper crack plate (34a) (lower crack plate (34b)) and the side crack plate (34d). By doing so, when the cooling unit (40) supplies the cooling gas (G1) or the cooling gas (G2), the amount of the cooling gas (G1) or the cooling gas (G2) directed to the work (100) can be increased. In addition, the amount of the cooling gas (G1) or the cooling gas (G2) exhausted from the processing region (30a, 30b) can be reduced. Therefore, the work (100) can be cooled efficiently.

In addition, immediately after the organic film is formed, it is preferable that the speed at which the cooling gas (G1) diffuses from the processing area (30a, 30b) into the interior of the chamber (10) be slow. If the speed at which the cooling gas (G1) diffuses from the processing area (30a, 30b) into the interior of the chamber (10) is slow, the supplied cooling gas (G1) can suppress the sublimation product from flying inside the chamber (10). Therefore, immediately after the organic film is formed, it is preferable to reduce the supply amount of the cooling gas (G1) and gradually increase the supply amount.

The controller (60) closes the valve (25) of the second exhaust section (22) and opens the valve (25) of the third exhaust section (23) when the output of the vacuum gauge (not shown) that detects the internal pressure of the chamber (10) becomes the same as the atmospheric pressure, thereby always exhausting the cooling gas (G1).

The controller (60) controls the switching valve (54) when the detection value of the thermometer (not shown) reaches the threshold value, and supplies cooling gas (G2) to the space where a plurality of heaters (32a) are installed. By doing so, the amount of N ₂ or rare gas used can be reduced. In addition, in the discharge process described later, the door (13) can be opened while the oxygen concentration is high. Therefore, concerns about oxygen deficiency due to N ₂ or rare gas are suppressed.

In the work removal process, when the temperature of the work (100) on which the organic film is formed becomes the third temperature, the supply of the cooling gas (G2) introduced into the chamber (10) is stopped. Then, the opening/closing door (13) is isolated from the flange (11), and the work (100) is removed.

As described above, the work (100) on which the organic film is formed is taken out from the inside of the chamber (10) or the like where the processing is performed, and returned to the next process, etc. When the organic film is formed by heating, the temperature of the work (100) increases, so it is difficult to take out or return the work (100) at a high temperature from the chamber (10). In addition, if taken out at a high temperature, there is a possibility that the organic film will be oxidized and will not be able to satisfy the function. Therefore, it is necessary to cool the work (100) by supplying a cooling gas (G1) to the inside of the chamber (10).

However, when forming an organic film, treatment at a very high temperature of about 250°C to 600°C is required. Therefore, the amount of cooling gas (G1) consumed until the temperature at which the work (100) can be returned becomes enormous. In addition, the organic film at about 250°C to 600°C is highly reactive. Therefore, if oxygen is included in the cooling gas (G1), the organic film is oxidized. However, if an inert gas is continuously used as the cooling gas (G1) during cooling to prevent oxidation of the organic film, the cost also increases.

The inventors of the present invention have, as a result of their research, discovered that when the temperature of the organic film (work (100)) is around 200°C, the organic film is not oxidized even if oxygen is contained in the cooling gas.

Therefore, the inventors of the present invention performed the organic film formation process including the cooling process of switching from the cooling gas (G1) to the cooling gas (G2) (CDA) after the temperature of the organic film (work (100)) became 200° C. or lower multiple times. In doing so, a partially oxidized organic film was generated.

As a result of further research, the inventors of the present invention have found that the cooling gas (G2) used in the cooling process remains in the pipe (common section) connecting the nozzle (41) and the switching valve (54).

The organic film forming device (1) according to the present embodiment heats the work (100) after depressurizing the internal space of the chamber (10). When depressurizing the internal space of the chamber (10), it was thought that the inside of the common section was also depressurized. However, in reality, the cooling gas (G2) used in the cooling process remained in the common section. It is thought that this is because the diameter of the discharge port for discharging the cooling gas (G1) or cooling gas (G2) of the nozzle (41) is small, and therefore the inside of the common section cannot be sufficiently exhausted.

Therefore, the organic film forming device (1) according to the present embodiment supplies cooling gas (G1) to the inside of the chamber (10) during the period from when the processed work (100) is taken out from the chamber (10) until the next processed work (100) is brought into the chamber (10) and its temperature is increased. By doing so, the cooling gas (G2) remaining in the common portion can be discharged.

In addition, when starting the cooling process of the work (100) on which the heat treatment process (2) has been performed following the work (100) that has been processed, the cooling gas (G2) remaining in the common section can be supplied into the chamber (10) to prevent it from coming into contact with the work (100) at 250°C or higher.

However, in the work removal process and the work loading process, the internal space of the chamber (10) is open to the external atmosphere. Therefore, even if the inside of the common section is replaced with a cooling gas (G1), there is a concern that air in the external atmosphere may infiltrate the pipe from the nozzle (41). Therefore, in the work loading process, it is preferable to supply a cooling gas (G1). In particular, it is preferable to perform this just before all the work (100) are loaded into the chamber (10) and the opening (11a) is closed with the front door (13).

Meanwhile, the time for supplying the cooling gas (G1) may be set to the time for which the concentration of the cooling gas (G2) remaining in the pipe is diluted to a level that does not adversely affect the quality of the organic film. In addition, the amount of the cooling gas (G1) supplied may be less than the amount supplied in the cooling process. The time for which the concentration of the cooling gas (G2) remaining in the pipe is diluted to a level that does not adversely affect the quality of the organic film or the amount of the cooling gas (G1) supplied may be appropriately determined by conducting simulations or experiments.

In addition, it is possible to supply cooling gas (G1) at the same time as depressurizing the internal space of the chamber (10). In this case, the time for supplying cooling gas (G1) should be a time for diluting the gas to a level that does not adversely affect the quality of the organic film.

Meanwhile, according to the knowledge obtained by the present inventors, when the oxygen concentration inside the chamber (10) is lowered to about 100 ppm, the oxidation reaction can be suppressed. In this case, the internal pressure of the chamber (10) where the oxygen concentration becomes 100 ppm is about 100 Pa. Therefore, it is preferable to reduce the internal pressure inside the chamber (10) to less than 1 Pa, and then supply a cooling gas (G1) so that the internal pressure inside the chamber (10) does not exceed 100 Pa. The cooling gas (G1) is supplied, and the oxygen concentration inside the chamber (10) is detected by an oxygen concentration meter (21c). When the oxygen concentration becomes lower than the threshold value, power is applied to the heater (32a). By doing so, it is possible to reliably suppress the adverse effects on the quality of the organic film. In this case, the threshold value is a value within the range of 0.1 ppm to 100 ppm.

Fig. 4 is a schematic perspective view illustrating an organic film forming device (1a) according to another embodiment.

The cooling unit (40) has two valves (54a) (equivalent to an example of the first valve) instead of the switching valve (54). By having two valves, two different gases can be supplied simultaneously into the interior of the chamber (10). Therefore, the flow rate of the cooling gas that can be supplied into the interior of the chamber (10) can be increased, and the time of the cooling process can be shortened. In this case, it is preferable that the supply amount of the cooling gas (G1) be greater than the supply amount of the cooling gas (G2).

In addition, the cooling unit (40) has one valve (54b) (equivalent to an example of the second valve) for each nozzle (41). By doing so, it becomes possible to control the supply and stop of cooling gas (G) for each nozzle (41).

In the case of the organic film forming device (1a), the pipe, valve (54b), and nozzle (41) of section A shown in Fig. 4 become common parts. In the organic film forming device (1a), the cooling gas (G2) used in the cooling process remains in the pipe of section A. As described above, it is difficult to exhaust the cooling gas (G2) remaining in the common part from the exhaust part (20) through the nozzle (41). In addition, if the cooling gas (G2) remaining in the pipe of section A is to be exhausted by the exhaust part (20), there is a concern that the sealing property in the chamber (10) may deteriorate.

Therefore, while the workpiece (100) that has been processed is removed from the chamber (10) and the workpiece (100) to be processed is brought into the chamber (10), a cooling gas (G1) is supplied to the inside of the chamber (10). By doing so, the cooling gas (G2) remaining in the common part can be discharged. Therefore, the organic film forming device (1a) can reduce the cost of cooling the workpiece (100) on which the organic film is formed, and can also reliably suppress adverse effects on the quality of the organic film, and can also prevent damage to the valve (54b).

Fig. 5 is a schematic perspective view illustrating an organic film forming device (1b) according to another embodiment.

As shown in Fig. 5, the organic film forming device (1b) may further have another cooling unit (140) (equivalent to an example of a second cooling unit).

The cooling unit (140) supplies cooling gas to the work (100) located inside the processing area (30a, 30b). That is, the cooling unit (140) directly cools the work (100).

The cooling unit (140) has a first supply path for supplying cooling gas (G1) to the area where the heating unit (32) is installed, a second supply path for supplying cooling gas (G2) to the area where the heating unit (32) is installed, and a common part, similar to the cooling unit (40). The cooling unit (140) differs from the cooling unit (40) in that it has a nozzle (141) instead of a nozzle (41).

Fig. 6 is a schematic cross-sectional view illustrating an organic film forming device (1b) according to another embodiment.

At least one nozzle (141) can be installed inside the processing area (30a, 30b). The nozzle (141) can, for example, penetrate the cover (15) and the cover (36) and be attached to the side crack plate (34d) or the frame (31). In the present embodiment, the nozzle (141) is attached to a position where cooling gas can be supplied to the back surface of the work (100). In addition, a plurality of nozzles (141) can be installed in the X direction. Alternatively, the nozzle (141) can be formed in a cylindrical shape with a closed tip. In addition, a plurality of holes may be formed on the side surface of the nozzle (141) so that it can be inserted from the side surface of the chamber (10).

In the case of indirectly and directly cooling the work (100), in the cooling process, if the temperature of the work (100) is higher than the threshold value, the cooling gas (G1) is supplied to the area where the heating unit (32) is installed, and if the temperature of the work (100) is lower than the threshold value, the cooling gas (G2) is supplied to the area where the heating unit (32) is installed from the cooling unit (40) and the cooling unit (140). By doing so, it is possible to shorten the actual cooling time.

That is, when the temperature of the work (100) exceeds the threshold value (200°C) and is in a situation where it is easy to react with oxygen, the work (100) can be cooled while preventing oxidation of the work (100) by cooling the work (100) with a cooling gas (G1) that does not contain oxygen gas (or has an oxygen concentration that does not adversely affect the quality of the organic film). On the other hand, when the temperature of the work (100) is below the threshold value and is in a situation where it is difficult to react with oxygen, the work (100) can be cooled while reducing the cost by cooling the work (100) with a cooling gas (G2) that contains oxygen, and oxygen deficiency can be prevented when the work (100) is taken out. On the other hand, the oxygen gas contained in the cooling gas (G2) is preferably an amount sufficient to suppress concerns about oxygen deficiency due to N ₂ or a rare gas, and an amount that is a concentration that does not cause oxygen poisoning.

As described above, the method for manufacturing an organic film according to the present embodiment comprises a work loading step for loading a work having a substrate, an organic material applied to an upper surface of the substrate, and a solution containing a solvent into a chamber capable of maintaining an atmosphere having a pressure lower than atmospheric pressure, a step for heating the work in an atmosphere having a pressure lower than atmospheric pressure, a step for cooling the work on which the organic film has been formed by performing the heating, and a step for removing the work on which the organic film has been formed, wherein in the step for heating the work, the work is heated in a processing region between a first heating section and a second heating section, and in the step for cooling the work, when the work has a temperature higher than 200°C, a first gas that is difficult to react with the heated work is supplied into at least one of the first heating section and the second heating section, and when the work has a temperature lower than 200°C, CDA is supplied into at least one of the first heating section and the second heating section, and in the work loading step, the first cooling gas is supplied when the work is loaded into the chamber.

Above, the embodiments have been exemplified. However, the present invention is not limited to these techniques.

With respect to the above-described embodiment, even if a person skilled in the art makes appropriate design changes, they are included within the scope of the present invention as long as they have the characteristics of the present invention.

For example, the shape, dimensions, arrangement, etc. of the organic film forming device (1) are not limited to those exemplified and may be appropriately changed.

In addition, each element of each of the above-described embodiments can be combined as much as possible, and a combination of these is also included in the scope of the present invention as long as it includes the characteristics of the present invention.

For example, a combination of a switching valve (54) and a valve (54b) may be used.

1: organic film forming device, 10: chamber, 11 a: opening, 20: exhaust section, 30: processing section, 30a: processing area, 30b: processing area, 32: heating section, 32 a: heater, 40: cooling section, 52: gas source, 53: gas control section, 54: detection section, 55: case, 60: controller, 100: work, G: cooling gas

Claims (6)

In an organic film forming device, a process of sequentially and continuously carrying out, by loading/unloading the work, a work supported in a chamber that is exhausted by an exhaust section and has a pressure lower than a predetermined pressure lower than atmospheric pressure, wherein the work includes a substrate and a solution including an organic material and a solvent applied to an upper surface of the substrate, and then cooling the heated work is heat-treated,
A heating unit installed facing the work supported within the chamber and heating the work,
A cooling unit that supplies cooling gas to the above heating unit,
A controller that controls the heating unit, the exhaust unit, and the cooling unit
Equipped with,
The above cooling unit,
A first gas supply path for supplying a first cooling gas that does not contain oxygen to the interior of the heating unit,
A second gas supply path for supplying a second cooling gas containing oxygen to the interior of the heating unit,
A common portion shared by the first gas supply path and the second gas supply path,
A first valve selectively supplies the first cooling gas supplied by the first gas supply path and the second cooling gas supplied by the second gas supply path to the common section.
has,
The above controller,
Controlling the internal pressure of the chamber to be lower than the predetermined pressure by the exhaust section,
After the internal pressure of the chamber becomes lower than the predetermined pressure, the heating unit is controlled so that the workpiece is heated to a predetermined temperature higher than the threshold value by the heating unit,
After the heating treatment by the heating unit is completed, if the workpiece has a temperature higher than a threshold value, the first valve is controlled to supply a first cooling gas to the heating unit,
When the workpiece becomes at a temperature below a threshold value due to the supply of the first cooling gas, the first valve is controlled to supply the second cooling gas to the heating unit,
An organic film forming device, wherein the first valve is controlled to supply the first cooling gas into the chamber while the internal pressure of the chamber returns to the atmospheric pressure by the supply of the first cooling gas and the second cooling gas, the workpiece that has been processed is started to be taken out from the chamber, the workpiece to be processed next is brought into the chamber, and while the workpiece to be processed next is heated by the heating unit, the first cooling gas is supplied into the chamber. In the first paragraph,
Further provided is an oxygen concentration meter for detecting the oxygen concentration within the chamber,
The above controller,
After the above work is placed into the chamber, the inside of the chamber is depressurized,
Supplying the first cooling gas into the depressurized chamber,
The oxygen concentration in the chamber is detected by the oxygen concentration meter,
An organic film forming device that supplies power to the heating unit when the value of the oxygen concentration in the detected chamber becomes lower than or equal to a threshold value. In paragraph 1 or 2,
An organic film forming device, wherein the cooling unit further has a second valve for controlling the supply and stop of the cooling gas supplied to the heating unit in the common unit. In a method for manufacturing an organic film, a process is sequentially performed on a work having a substrate and a solution containing an organic material and a solvent applied to the upper surface of the substrate by sequentially loading/unloading the work,
A work loading process for loading the work into a chamber capable of maintaining an atmosphere below a predetermined pressure that is lower than atmospheric pressure,
A process of heating the work in an atmosphere having a pressure lower than atmospheric pressure and having a predetermined pressure or lower,
A process of cooling a workpiece in which an organic film is formed by performing the above heating,
Process for removing the work on which the organic film is formed
Equipped with,
In the process of heating the work, after the internal pressure of the chamber becomes lower than the predetermined pressure, the work is heated to a predetermined temperature higher than the threshold value by a heating unit installed facing the work.
In the process of cooling the above work,
After the heating treatment by the heating unit is completed, if the workpiece has a temperature higher than the threshold value, a first cooling gas that does not contain oxygen is supplied to the heating unit,
When the workpiece reaches a temperature below the threshold value by supplying the first cooling gas, a second cooling gas containing oxygen is supplied to the heating unit,
A method for manufacturing an organic film, wherein the process of removing the work is performed after the internal pressure of the chamber returns to atmospheric pressure by supplying the first cooling gas and the second cooling gas, and the first cooling gas is supplied into the chamber between the process of removing the work and the process of introducing the work. delete delete

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