TWI221638B - Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer - Google Patents

Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer Download PDF

Info

Publication number: TWI221638B
Authority: TW; Taiwan
Prior art keywords: nitride semiconductor; group iii; group; iii nitride; substrate
Prior art date: 2002-02-15

Application number

TW92103031A

Other languages

English (en)

Chinese (zh)

Other versions

TW200307313A (en

Inventor

Hisayuki Miki

Tetsuo Sakurai

Mineo Okuyama

Original Assignee

Showa Denko Kk

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-02-15

Filing date

2003-02-14

Publication date

2004-10-01

2003-02-14 Application filed by Showa Denko Kk filed Critical Showa Denko Kk

2003-12-01 Publication of TW200307313A publication Critical patent/TW200307313A/zh

2004-10-01 Application granted granted Critical

2004-10-01 Publication of TWI221638B publication Critical patent/TWI221638B/zh

Links

TW92103031A 2002-02-15 2003-02-14 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer TWI221638B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2002038841A JP3656606B2 (ja)	2002-02-15	2002-02-15	Ｉｉｉ族窒化物半導体結晶の製造方法

Publications (2)

Publication Number	Publication Date
TW200307313A TW200307313A (en)	2003-12-01
TWI221638B true TWI221638B (en)	2004-10-01

Family

ID=27780051

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW92103031A TWI221638B (en)	2002-02-15	2003-02-14	Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer

Country Status (4)

Country	Link
JP (1)	JP3656606B2 (ko)
KR (2)	KR100692267B1 (ko)
CN (1)	CN100338733C (ko)
TW (1)	TWI221638B (ko)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7935955B2 (en)	2004-01-26	2011-05-03	Showa Denko K.K.	Group III nitride semiconductor multilayer structure
JP2005244202A (ja) *	2004-01-26	2005-09-08	Showa Denko Kk	Ｉｉｉ族窒化物半導体積層物
JP4901115B2 (ja)	2004-03-04	2012-03-21	昭和電工株式会社	窒化ガリウム系半導体素子
WO2005086241A1 (en)	2004-03-04	2005-09-15	Showa Denko K.K.	Gallium nitride-based semiconductor device
WO2005088738A1 (en)	2004-03-12	2005-09-22	Showa Denko K.K.	Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
TWI287880B (en)	2004-03-18	2007-10-01	Showa Denko Kk	Group III nitride semiconductor light-emitting device and method of producing the same
US7655491B2 (en)	2004-05-12	2010-02-02	Showa Denko K.K.	P-type Group III nitride semiconductor and production method thereof
JP2006229219A (ja) *	2004-05-12	2006-08-31	Showa Denko Kk	ＩＩＩ族窒化物ｐ型半導体およびその製造方法
JP4833616B2 (ja) *	2004-09-13	2011-12-07	昭和電工株式会社	Ｉｉｉ族窒化物半導体の製造方法
US7652299B2 (en)	2005-02-14	2010-01-26	Showa Denko K.K.	Nitride semiconductor light-emitting device and method for fabrication thereof
DE112006000562B4 (de)	2005-03-09	2021-02-18	Toyoda Gosei Co., Ltd.	Nitridhalbleiter-Leuchtbauteil und Verfahren zu dessen Herstellung
US8076165B2 (en)	2005-04-01	2011-12-13	Sharp Kabushiki Kaisha	Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method
JP4432827B2 (ja)	2005-04-26	2010-03-17	住友電気工業株式会社	Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板
US7951617B2 (en)	2005-10-06	2011-05-31	Showa Denko K.K.	Group III nitride semiconductor stacked structure and production method thereof
JP2007220745A (ja) *	2006-02-14	2007-08-30	Showa Denko Kk	ＩＩＩ族窒化物ｐ型半導体の製造方法
WO2007129773A1 (ja)	2006-05-10	2007-11-15	Showa Denko K.K.	Iii族窒化物化合物半導体積層構造体
JP5250856B2 (ja)	2006-06-13	2013-07-31	豊田合成株式会社	窒化ガリウム系化合物半導体発光素子の製造方法
JP2009123718A (ja)	2007-01-16	2009-06-04	Showa Denko Kk	Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
JP4993627B2 (ja) *	2009-03-24	2012-08-08	古河機械金属株式会社	Ｉｉｉ族窒化物半導体層の製造方法
WO2012137309A1 (ja) *	2011-04-05	2012-10-11	住友電気工業株式会社	窒化物電子デバイスを作製する方法
JP5948698B2 (ja) *	2012-04-13	2016-07-06	パナソニックＩｐマネジメント株式会社	紫外発光素子およびその製造方法
JP6442957B2 (ja) *	2014-09-29	2018-12-26	日亜化学工業株式会社	窒化物半導体テンプレートの製造方法
CN107039250B (zh) *	2016-02-03	2018-08-21	中晟光电设备（上海）股份有限公司	一种在蓝宝石衬底上生长氮化镓材料的方法、氮化镓材料及其用途
JP7429522B2 (ja) *	2019-11-22	2024-02-08	住友化学株式会社	Ｉｉｉ族窒化物積層基板および半導体素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5751752A (en) *	1994-09-14	1998-05-12	Rohm Co., Ltd.	Semiconductor light emitting device and manufacturing method therefor
JPH08264886A (ja) *	1995-03-27	1996-10-11	Sumitomo Electric Ind Ltd	半導体レーザ素子およびその製造方法
JP3491492B2 (ja) *	1997-04-09	2004-01-26	松下電器産業株式会社	窒化ガリウム結晶の製造方法
CN1044840C (zh) *	1997-07-24	1999-08-25	北京大学	GaN/Al2O3复合材料在Ⅲ－V族氮化物外延生长中做衬底的方法
JP3615081B2 (ja) *	1999-03-30	2005-01-26	古河電気工業株式会社	ＧａＮ単結晶の作製方法
CN1313412A (zh) *	2000-03-10	2001-09-19	广镓光电股份有限公司	在单晶基板上形成第三族氮化物外延层方法、制品及设备
KR100319300B1 (ko) *	2000-03-23	2002-01-04	윤종용	이종접합구조의 양자점 버퍼층을 가지는 반도체 소자
JP3285341B2 (ja) *	2000-06-01	2002-05-27	士郎酒井	窒化ガリウム系化合物半導体の製造方法

2002
- 2002-02-15 JP JP2002038841A patent/JP3656606B2/ja not_active Expired - Lifetime
2003
- 2003-02-14 TW TW92103031A patent/TWI221638B/zh not_active IP Right Cessation
- 2003-02-14 KR KR1020067010518A patent/KR100692267B1/ko active IP Right Grant
- 2003-02-14 KR KR1020047012652A patent/KR100659520B1/ko active IP Right Grant
- 2003-02-14 CN CNB038050781A patent/CN100338733C/zh not_active Expired - Lifetime

Also Published As

Publication number	Publication date
CN100338733C (zh)	2007-09-19
TW200307313A (en)	2003-12-01
KR100659520B1 (ko)	2006-12-20
KR100692267B1 (ko)	2007-03-12
KR20040079443A (ko)	2004-09-14
JP3656606B2 (ja)	2005-06-08
JP2003243302A (ja)	2003-08-29
CN1639393A (zh)	2005-07-13
KR20060079259A (ko)	2006-07-05

Similar Documents

Publication	Publication Date	Title
TWI221638B (en)	2004-10-01	Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
US6852161B2 (en)	2005-02-08	Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
US7951617B2 (en)	2011-05-31	Group III nitride semiconductor stacked structure and production method thereof
JP5307975B2 (ja)	2013-10-02	窒化物系半導体自立基板及び窒化物系半導体発光デバイス用エピタキシャル基板
US8882910B2 (en)	2014-11-11	AlGaN substrate and production method thereof
Kim et al.	2004	Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage
US20070221954A1 (en)	2007-09-27	Group III-V nitride-based semiconductor substrate, group III-V nitride-based device and method of fabricating the same
JPWO2010032423A1 (ja)	2012-02-02	Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子並びにランプ、ｉｉｉ族窒化物半導体発光素子ウエーハの発光波長分布のばらつき低減方法
US20110003420A1 (en)	2011-01-06	Fabrication method of gallium nitride-based compound semiconductor
JP4996448B2 (ja)	2012-08-08	半導体基板の作成方法
JP3940673B2 (ja)	2007-07-04	Ｉｉｉ族窒化物半導体結晶の製造方法、および窒化ガリウム系化合物半導体の製造方法
JP2008034444A (ja)	2008-02-14	Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子及びランプ
JP2007103774A (ja)	2007-04-19	Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
JP2010056555A (ja)	2010-03-11	半導体構造物及びそれを製造する方法
JP4833616B2 (ja)	2011-12-07	Ｉｉｉ族窒化物半導体の製造方法
US8236103B2 (en)	2012-08-07	Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer
TW546850B (en)	2003-08-11	Manufacturing method for crystallization of group III nitride semiconductor, manufacturing method for gallium nitride compound semiconductor, gallium nitride compound semiconductor, gallium nitride compound semiconductor light emitting elements and light
JP3991823B2 (ja)	2007-10-17	Ｉｉｉ族窒化物半導体結晶、その製造方法、ｉｉｉ族窒化物半導体エピタキシャルウェーハ
JP2009023853A (ja)	2009-02-05	Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法、並びにｉｉｉ−ｖ族窒化物系半導体デバイス
JP2012204540A (ja)	2012-10-22	半導体装置およびその製造方法
JP4222287B2 (ja)	2009-02-12	Ｉｉｉ族窒化物半導体結晶の製造方法
KR100742986B1 (ko)	2007-07-26	컴플라이언트 기판을 갖는 질화갈륨계 화합물 반도체 소자의 제조 방법
JP3214349B2 (ja)	2001-10-02	ＩｎＧａＮ層を有する半導体ウエハ及びその製造方法並びにそれを具備する発光素子
Amano et al.	2010	Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Legal Events

Date	Code	Title	Description
2023-03-21	MK4A	Expiration of patent term of an invention patent