JP3656606B2 - Ｉｉｉ族窒化物半導体結晶の製造方法 - Google Patents
Ｉｉｉ族窒化物半導体結晶の製造方法 Download PDFInfo
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- JP3656606B2 JP3656606B2 JP2002038841A JP2002038841A JP3656606B2 JP 3656606 B2 JP3656606 B2 JP 3656606B2 JP 2002038841 A JP2002038841 A JP 2002038841A JP 2002038841 A JP2002038841 A JP 2002038841A JP 3656606 B2 JP3656606 B2 JP 3656606B2
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- Prior art keywords
- group iii
- nitride semiconductor
- iii nitride
- crystal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000013078 crystal Substances 0.000 title claims description 147
- 239000004065 semiconductor Substances 0.000 title claims description 122
- 150000004767 nitrides Chemical class 0.000 title claims description 108
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims description 128
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 66
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 66
- 229910021529 ammonia Inorganic materials 0.000 claims description 30
- 239000002994 raw material Substances 0.000 claims description 27
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 11
- 238000000354 decomposition reaction Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 97
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 96
- 238000000034 method Methods 0.000 description 73
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 43
- 229910052594 sapphire Inorganic materials 0.000 description 42
- 239000010980 sapphire Substances 0.000 description 42
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 39
- 239000012159 carrier gas Substances 0.000 description 27
- 239000007789 gas Substances 0.000 description 25
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 23
- 230000008569 process Effects 0.000 description 20
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 17
- 229910001873 dinitrogen Inorganic materials 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 238000005259 measurement Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000006698 induction Effects 0.000 description 10
- 230000005587 bubbling Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- -1 tertiarybutylgallium Chemical compound 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000921 elemental analysis Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- JZPXQBRKWFVPAE-UHFFFAOYSA-N cyclopentane;indium Chemical compound [In].[CH]1[CH][CH][CH][CH]1 JZPXQBRKWFVPAE-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
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- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002038841A JP3656606B2 (ja) | 2002-02-15 | 2002-02-15 | Ｉｉｉ族窒化物半導体結晶の製造方法 |
| AU2003209712A AU2003209712A1 (en) | 2002-02-15 | 2003-02-14 | Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer |
| KR1020047012652A KR100659520B1 (ko) | 2002-02-15 | 2003-02-14 | Ⅲ족 질화물 반도체 결정의 제조 방법 |
| CNB038050781A CN100338733C (zh) | 2002-02-15 | 2003-02-14 | Ⅲ族氮化物半导体晶体及其制造方法以及ⅲ族氮化物半导体外延晶片 |
| KR1020067010518A KR100692267B1 (ko) | 2002-02-15 | 2003-02-14 | Ⅲ족 질화물 반도체 결정의 제조 방법 |
| TW92103031A TWI221638B (en) | 2002-02-15 | 2003-02-14 | Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer |
| EP03739657.9A EP1474824B1 (en) | 2002-02-15 | 2003-02-14 | Production method for group iii nitride semiconductor layer |
| US10/504,584 US8236103B2 (en) | 2002-02-15 | 2003-02-14 | Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer |
| PCT/JP2003/001558 WO2003068699A1 (en) | 2002-02-15 | 2003-02-14 | Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002038841A JP3656606B2 (ja) | 2002-02-15 | 2002-02-15 | Ｉｉｉ族窒化物半導体結晶の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004301065A Division JP4222287B2 (ja) | 2004-10-15 | 2004-10-15 | Ｉｉｉ族窒化物半導体結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003243302A JP2003243302A (ja) | 2003-08-29 |
| JP2003243302A5 JP2003243302A5 (ko) | 2005-05-19 |
| JP3656606B2 true JP3656606B2 (ja) | 2005-06-08 |
Family
ID=27780051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002038841A Expired - Lifetime JP3656606B2 (ja) | 2002-02-15 | 2002-02-15 | Ｉｉｉ族窒化物半導体結晶の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3656606B2 (ko) |
| KR (2) | KR100692267B1 (ko) |
| CN (1) | CN100338733C (ko) |
| TW (1) | TWI221638B (ko) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7935955B2 (en) | 2004-01-26 | 2011-05-03 | Showa Denko K.K. | Group III nitride semiconductor multilayer structure |
| JP2005244202A (ja) * | 2004-01-26 | 2005-09-08 | Showa Denko Kk | Ｉｉｉ族窒化物半導体積層物 |
| JP4901115B2 (ja) | 2004-03-04 | 2012-03-21 | 昭和電工株式会社 | 窒化ガリウム系半導体素子 |
| WO2005086241A1 (en) | 2004-03-04 | 2005-09-15 | Showa Denko K.K. | Gallium nitride-based semiconductor device |
| WO2005088738A1 (en) | 2004-03-12 | 2005-09-22 | Showa Denko K.K. | Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same |
| TWI287880B (en) | 2004-03-18 | 2007-10-01 | Showa Denko Kk | Group III nitride semiconductor light-emitting device and method of producing the same |
| US7655491B2 (en) | 2004-05-12 | 2010-02-02 | Showa Denko K.K. | P-type Group III nitride semiconductor and production method thereof |
| JP2006229219A (ja) * | 2004-05-12 | 2006-08-31 | Showa Denko Kk | ＩＩＩ族窒化物ｐ型半導体およびその製造方法 |
| JP4833616B2 (ja) * | 2004-09-13 | 2011-12-07 | 昭和電工株式会社 | Ｉｉｉ族窒化物半導体の製造方法 |
| US7652299B2 (en) | 2005-02-14 | 2010-01-26 | Showa Denko K.K. | Nitride semiconductor light-emitting device and method for fabrication thereof |
| DE112006000562B4 (de) | 2005-03-09 | 2021-02-18 | Toyoda Gosei Co., Ltd. | Nitridhalbleiter-Leuchtbauteil und Verfahren zu dessen Herstellung |
| US8076165B2 (en) | 2005-04-01 | 2011-12-13 | Sharp Kabushiki Kaisha | Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method |
| JP4432827B2 (ja) | 2005-04-26 | 2010-03-17 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板 |
| US7951617B2 (en) | 2005-10-06 | 2011-05-31 | Showa Denko K.K. | Group III nitride semiconductor stacked structure and production method thereof |
| JP2007220745A (ja) * | 2006-02-14 | 2007-08-30 | Showa Denko Kk | ＩＩＩ族窒化物ｐ型半導体の製造方法 |
| WO2007129773A1 (ja) | 2006-05-10 | 2007-11-15 | Showa Denko K.K. | Iii族窒化物化合物半導体積層構造体 |
| JP5250856B2 (ja) | 2006-06-13 | 2013-07-31 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法 |
| JP2009123718A (ja) | 2007-01-16 | 2009-06-04 | Showa Denko Kk | Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ |
| JP4993627B2 (ja) * | 2009-03-24 | 2012-08-08 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体層の製造方法 |
| WO2012137309A1 (ja) * | 2011-04-05 | 2012-10-11 | 住友電気工業株式会社 | 窒化物電子デバイスを作製する方法 |
| JP5948698B2 (ja) * | 2012-04-13 | 2016-07-06 | パナソニックＩｐマネジメント株式会社 | 紫外発光素子およびその製造方法 |
| JP6442957B2 (ja) * | 2014-09-29 | 2018-12-26 | 日亜化学工業株式会社 | 窒化物半導体テンプレートの製造方法 |
| CN107039250B (zh) * | 2016-02-03 | 2018-08-21 | 中晟光电设备（上海）股份有限公司 | 一种在蓝宝石衬底上生长氮化镓材料的方法、氮化镓材料及其用途 |
| JP7429522B2 (ja) * | 2019-11-22 | 2024-02-08 | 住友化学株式会社 | Ｉｉｉ族窒化物積層基板および半導体素子 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5751752A (en) * | 1994-09-14 | 1998-05-12 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| JPH08264886A (ja) * | 1995-03-27 | 1996-10-11 | Sumitomo Electric Ind Ltd | 半導体レーザ素子およびその製造方法 |
| JP3491492B2 (ja) * | 1997-04-09 | 2004-01-26 | 松下電器産業株式会社 | 窒化ガリウム結晶の製造方法 |
| CN1044840C (zh) * | 1997-07-24 | 1999-08-25 | 北京大学 | GaN/Al2O3复合材料在Ⅲ－V族氮化物外延生长中做衬底的方法 |
| JP3615081B2 (ja) * | 1999-03-30 | 2005-01-26 | 古河電気工業株式会社 | ＧａＮ単結晶の作製方法 |
| CN1313412A (zh) * | 2000-03-10 | 2001-09-19 | 广镓光电股份有限公司 | 在单晶基板上形成第三族氮化物外延层方法、制品及设备 |
| KR100319300B1 (ko) * | 2000-03-23 | 2002-01-04 | 윤종용 | 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자 |
| JP3285341B2 (ja) * | 2000-06-01 | 2002-05-27 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
-
2002
- 2002-02-15 JP JP2002038841A patent/JP3656606B2/ja not_active Expired - Lifetime
-
2003
- 2003-02-14 TW TW92103031A patent/TWI221638B/zh not_active IP Right Cessation
- 2003-02-14 KR KR1020067010518A patent/KR100692267B1/ko active IP Right Grant
- 2003-02-14 KR KR1020047012652A patent/KR100659520B1/ko active IP Right Grant
- 2003-02-14 CN CNB038050781A patent/CN100338733C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TWI221638B (en) | 2004-10-01 |
| CN100338733C (zh) | 2007-09-19 |
| TW200307313A (en) | 2003-12-01 |
| KR100659520B1 (ko) | 2006-12-20 |
| KR100692267B1 (ko) | 2007-03-12 |
| KR20040079443A (ko) | 2004-09-14 |
| JP2003243302A (ja) | 2003-08-29 |
| CN1639393A (zh) | 2005-07-13 |
| KR20060079259A (ko) | 2006-07-05 |
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