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TW329537B - Anti-reflective composition comprising germanium and method for fabrication a pattern - Google Patents

Anti-reflective composition comprising germanium and method for fabrication a pattern

Info

Publication number
TW329537B
TW329537B TW086109084A TW86109084A TW329537B TW 329537 B TW329537 B TW 329537B TW 086109084 A TW086109084 A TW 086109084A TW 86109084 A TW86109084 A TW 86109084A TW 329537 B TW329537 B TW 329537B
Authority
TW
Taiwan
Prior art keywords
germanium
fabrication
pattern
reflective composition
composition
Prior art date
Application number
TW086109084A
Other languages
Chinese (zh)
Inventor
Kim Dong-Wan
Kang Ho-Young
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW329537B publication Critical patent/TW329537B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

An anti-reflective composition comprising germanium and a method of fabrication a pattern are provided.An anti-reflective film for reducing rediation,that is reflected from an underlayer and penetrates a photoresist film,is formed of a composition comprising germanium(Ge) such as germanium nitride during fabrication of a semiconductor device.
TW086109084A 1996-08-21 1997-06-28 Anti-reflective composition comprising germanium and method for fabrication a pattern TW329537B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960034761A KR100219550B1 (en) 1996-08-21 1996-08-21 Anti-reflective coating layer and pattern forming method using the same

Publications (1)

Publication Number Publication Date
TW329537B true TW329537B (en) 1998-04-11

Family

ID=19470350

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109084A TW329537B (en) 1996-08-21 1997-06-28 Anti-reflective composition comprising germanium and method for fabrication a pattern

Country Status (3)

Country Link
JP (1) JPH1092742A (en)
KR (1) KR100219550B1 (en)
TW (1) TW329537B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451041B1 (en) * 1997-06-27 2004-12-04 주식회사 하이닉스반도체 Method for forming metal interconnection of semiconductor device to solve problems arising from step between cell area and peripheral circuit area of semiconductor device
KR100307629B1 (en) * 1999-04-30 2001-09-26 윤종용 Method for forming and applicating a anti reflective film using hydrocarbon based gas
KR100807521B1 (en) * 2006-08-23 2008-02-26 동부일렉트로닉스 주식회사 A method of fabricating semiconductor device
JP5656010B2 (en) * 2009-12-04 2015-01-21 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ Method for forming hard mask film and apparatus for forming hard mask film
KR101314515B1 (en) * 2010-01-28 2013-10-02 연세대학교 산학협력단 Optical element for infrared optical system having anti-reflection structures composed of different material and method of fabricating the same
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US10297442B2 (en) 2013-05-31 2019-05-21 Lam Research Corporation Remote plasma based deposition of graded or multi-layered silicon carbide film
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US10002787B2 (en) 2016-11-23 2018-06-19 Lam Research Corporation Staircase encapsulation in 3D NAND fabrication

Also Published As

Publication number Publication date
KR100219550B1 (en) 1999-09-01
KR19980015458A (en) 1998-05-25
JPH1092742A (en) 1998-04-10

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