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TW200739949A - Gallium nitride type compound semiconductor light-emitting device and process for producing the same - Google Patents

Gallium nitride type compound semiconductor light-emitting device and process for producing the same

Info

Publication number
TW200739949A
TW200739949A TW095146717A TW95146717A TW200739949A TW 200739949 A TW200739949 A TW 200739949A TW 095146717 A TW095146717 A TW 095146717A TW 95146717 A TW95146717 A TW 95146717A TW 200739949 A TW200739949 A TW 200739949A
Authority
TW
Taiwan
Prior art keywords
gallium nitride
compound semiconductor
emitting device
producing
semiconductor light
Prior art date
Application number
TW095146717A
Other languages
English (en)
Inventor
Hironao Shinohara
Hiroshi Osawa
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200739949A publication Critical patent/TW200739949A/zh

Links

Classifications

    • H01L33/38—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2933/0016—
    • H01L33/22—
    • H01L33/32—
    • H01L33/42—

Landscapes

  • Led Devices (AREA)
TW095146717A 2005-12-14 2006-12-13 Gallium nitride type compound semiconductor light-emitting device and process for producing the same TW200739949A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005360290A JP2007165613A (ja) 2005-12-14 2005-12-14 窒化ガリウム系化合物半導体発光素子及びその製造方法

Publications (1)

Publication Number Publication Date
TW200739949A true TW200739949A (en) 2007-10-16

Family

ID=38162898

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095146717A TW200739949A (en) 2005-12-14 2006-12-13 Gallium nitride type compound semiconductor light-emitting device and process for producing the same

Country Status (7)

Country Link
US (1) US8026118B2 (zh)
EP (1) EP1965441A4 (zh)
JP (1) JP2007165613A (zh)
KR (1) KR20080075000A (zh)
CN (1) CN101326649B (zh)
TW (1) TW200739949A (zh)
WO (1) WO2007069590A1 (zh)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
TWI425653B (zh) * 2008-05-28 2014-02-01

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JP5227334B2 (ja) * 2007-11-29 2013-07-03 京セラ株式会社 発光素子及び照明装置
KR101427076B1 (ko) * 2008-07-22 2014-08-07 삼성전자주식회사 반도체 발광소자
US8183575B2 (en) * 2009-01-26 2012-05-22 Bridgelux, Inc. Method and apparatus for providing a patterned electrically conductive and optically transparent or semi-transparent layer over a lighting semiconductor device
JP2011054935A (ja) 2009-06-19 2011-03-17 Rohm & Haas Electronic Materials Llc ドーピング方法
US8173456B2 (en) * 2009-07-05 2012-05-08 Industrial Technology Research Institute Method of manufacturing a light emitting diode element
JP5284300B2 (ja) * 2010-03-10 2013-09-11 株式会社東芝 半導体発光素子、およびそれを用いた照明装置、ならびに半導体発光素子の製造方法
CN102214625A (zh) * 2010-04-01 2011-10-12 华上光电股份有限公司 半导体晶片电极结构与制造方法
JP5390472B2 (ja) * 2010-06-03 2014-01-15 株式会社東芝 半導体発光装置及びその製造方法
CN102456825A (zh) * 2010-10-25 2012-05-16 展晶科技(深圳)有限公司 发光二极管及其制造方法
JP2012227289A (ja) * 2011-04-18 2012-11-15 Toshiba Corp 半導体発光装置
US8759127B2 (en) * 2011-08-31 2014-06-24 Toshiba Techno Center Inc. Gold micromask for roughening to promote light extraction in an LED
KR101883840B1 (ko) * 2011-08-31 2018-08-01 엘지이노텍 주식회사 발광소자
TWI484660B (zh) * 2011-08-31 2015-05-11 Kabushiki Kaisya Toshiba 提昇發光二極體內光萃取率的粗化製程之金微遮罩
JP6011108B2 (ja) * 2011-09-27 2016-10-19 日亜化学工業株式会社 半導体素子
CN103367595B (zh) * 2012-03-30 2016-02-10 展晶科技(深圳)有限公司 发光二极管晶粒及其制造方法
US9660140B2 (en) * 2012-11-02 2017-05-23 Riken Ultraviolet light emitting diode and method for producing same
WO2014175564A1 (ko) * 2013-04-22 2014-10-30 한국산업기술대학교산학협력단 수직형 발광다이오드 제조 방법, 수직형 발광다이오드와 자외선 발광다이오드 제조 방법 및 자외선 발광다이오드
US10340416B2 (en) * 2016-02-26 2019-07-02 Riken Crystal substrate, ultraviolet light-emitting device, and manufacturing methods therefor
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JP6806218B2 (ja) * 2018-10-31 2021-01-06 日亜化学工業株式会社 発光装置、発光モジュール、発光装置及び発光モジュールの製造方法

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TWI325642B (en) * 2005-12-14 2010-06-01 Showa Denko Kk Gallium nitride type compound semiconductor light-emitting device and process for producing the same
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Cited By (1)

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TWI425653B (zh) * 2008-05-28 2014-02-01

Also Published As

Publication number Publication date
US20090309119A1 (en) 2009-12-17
CN101326649B (zh) 2010-12-08
CN101326649A (zh) 2008-12-17
EP1965441A1 (en) 2008-09-03
KR20080075000A (ko) 2008-08-13
US8026118B2 (en) 2011-09-27
JP2007165613A (ja) 2007-06-28
WO2007069590A1 (ja) 2007-06-21
EP1965441A4 (en) 2013-08-07

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