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SG164319A1 - High voltage device - Google Patents

High voltage device

Info

Publication number
SG164319A1
SG164319A1 SG201000634-4A SG2010006344A SG164319A1 SG 164319 A1 SG164319 A1 SG 164319A1 SG 2010006344 A SG2010006344 A SG 2010006344A SG 164319 A1 SG164319 A1 SG 164319A1
Authority
SG
Singapore
Prior art keywords
substrate
mask
gate stack
gate
layer
Prior art date
Application number
SG201000634-4A
Inventor
Zhang Guowei
Purakh Raj Verma
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/500,620 external-priority patent/US8222130B2/en
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG164319A1 publication Critical patent/SG164319A1/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

A method of forming a device is presented. The method includes providing a substrate prepared with an active device region. The active device region includes gate stack layers of a gate stack including at least a gate electrode layer over a gate dielectric layer. A first mask is provided on the substrate corresponding to the gate. The substrate is patterned to at least remove portions of a top gate stack layer unprotected by the first mask. A second mask is also provided on the substrate with an opening exposing a portion of the first mask and the top gate stack layer. A channel well is formed by implanting ions through the opening and gate stack layers into the substrate.
SG201000634-4A 2009-07-10 2010-01-28 High voltage device SG164319A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/500,620 US8222130B2 (en) 2009-02-23 2009-07-10 High voltage device

Publications (1)

Publication Number Publication Date
SG164319A1 true SG164319A1 (en) 2010-09-29

Family

ID=43066537

Family Applications (2)

Application Number Title Priority Date Filing Date
SG201000634-4A SG164319A1 (en) 2009-07-10 2010-01-28 High voltage device
SG2012061933A SG183751A1 (en) 2009-07-10 2010-01-28 High voltage device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012061933A SG183751A1 (en) 2009-07-10 2010-01-28 High voltage device

Country Status (3)

Country Link
CN (1) CN101950735B (en)
SG (2) SG164319A1 (en)
TW (1) TWI520223B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI512982B (en) * 2011-04-20 2015-12-11 United Microelectronics Corp High voltage metal oxide semiconductor device with low on-state resistance
CN104465374B (en) * 2013-09-13 2017-03-29 中国科学院微电子研究所 Semiconductor device manufacturing method
KR102138385B1 (en) 2014-03-06 2020-07-28 매그나칩 반도체 유한회사 Low-cost semiconductor device manufacturing method
TWI559502B (en) * 2014-08-19 2016-11-21 旺宏電子股份有限公司 Semiconductor device
CN105448725B (en) * 2014-08-26 2018-11-16 中芯国际集成电路制造(上海)有限公司 Semiconductor devices and forming method thereof
CN104241384B (en) * 2014-09-23 2018-02-23 矽力杰半导体技术(杭州)有限公司 The manufacture method of lateral double-diffused metal-oxide-semiconductor transistor
CN105990424A (en) * 2015-02-03 2016-10-05 中芯国际集成电路制造(上海)有限公司 Semiconductor device and manufacturing method thereof, and electronic device
CN112968056B (en) * 2021-02-23 2023-11-03 长江存储科技有限责任公司 Semiconductor structure and manufacturing method thereof
TWI792239B (en) * 2021-03-23 2023-02-11 力晶積成電子製造股份有限公司 Method of manufacturing gate dielectrid layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589414A (en) * 1995-06-23 1996-12-31 Taiwan Semiconductor Manufacturing Company Ltd. Method of making mask ROM with two layer gate electrode
SE519382C2 (en) * 2000-11-03 2003-02-25 Ericsson Telefon Ab L M Integration of self-oriented MOS high voltage components and semiconductor structure including such
US6633716B2 (en) * 2001-05-02 2003-10-14 Motorola, Inc. Optical device and method therefor
US20050275037A1 (en) * 2004-06-12 2005-12-15 Chung Shine C Semiconductor devices with high voltage tolerance

Also Published As

Publication number Publication date
CN101950735B (en) 2014-10-15
TWI520223B (en) 2016-02-01
TW201112337A (en) 2011-04-01
CN101950735A (en) 2011-01-19
SG183751A1 (en) 2012-09-27

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