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SG11201909576XA - Large single crystal diamond and a method of producing the same - Google Patents

Large single crystal diamond and a method of producing the same

Info

Publication number
SG11201909576XA
SG11201909576XA SG11201909576XA SG11201909576XA SG 11201909576X A SG11201909576X A SG 11201909576XA SG 11201909576X A SG11201909576X A SG 11201909576XA SG 11201909576X A SG11201909576X A SG 11201909576XA
Authority
SG
Singapore
Prior art keywords
single crystal
international
crystal diamond
diamond
producing
Prior art date
Application number
Other languages
English (en)
Inventor
Devi Misra
Original Assignee
Sunset Peak International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunset Peak International Ltd filed Critical Sunset Peak International Ltd
Publication of SG11201909576XA publication Critical patent/SG11201909576XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
SG11201909576X 2017-04-26 2018-04-27 Large single crystal diamond and a method of producing the same SG11201909576XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201703436V 2017-04-26
PCT/SG2018/000003 WO2018199845A1 (en) 2017-04-26 2018-04-27 Large single crystal diamond and a method of producing the same

Publications (1)

Publication Number Publication Date
SG11201909576XA true SG11201909576XA (en) 2019-11-28

Family

ID=63917741

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909576X SG11201909576XA (en) 2017-04-26 2018-04-27 Large single crystal diamond and a method of producing the same

Country Status (8)

Country Link
US (1) US20200199778A1 (zh)
EP (1) EP3615482A4 (zh)
JP (1) JP7256753B2 (zh)
KR (1) KR102372059B1 (zh)
CN (1) CN110914204B (zh)
SG (1) SG11201909576XA (zh)
TW (1) TWI706061B (zh)
WO (1) WO2018199845A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021030557A1 (en) * 2019-08-13 2021-02-18 Pt Creations Synthetic diamond jewelry and fabrication method thereof
CN112030228B (zh) * 2020-09-11 2021-05-18 哈尔滨工业大学 用于多颗mpcvd单晶金刚石共同生长的桥接控温方法
JP2022184075A (ja) * 2021-05-31 2022-12-13 国立研究開発法人産業技術総合研究所 モザイクダイヤモンドウェハと異種半導体との接合体及びその製造方法、並びに、異種半導体との接合体用モザイクダイヤモンドウェハ
CN114032613B (zh) * 2021-10-14 2023-10-31 吉林大学 一种提高拼接法生长金刚石单晶拼接缝质量的方法
TWI840846B (zh) * 2022-06-21 2024-05-01 宋健民 一種單晶鑽石晶圓及單晶鑽石的製造方法

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GB8810113D0 (en) * 1988-04-28 1988-06-02 Jones B L Bonded composite
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
JPH04139091A (ja) * 1990-09-28 1992-05-13 Toshiba Corp ダイヤモンドの製造方法
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
JP3350992B2 (ja) * 1993-02-05 2002-11-25 住友電気工業株式会社 ダイヤモンドの合成方法
US6158952A (en) * 1994-08-31 2000-12-12 Roberts; Ellis Earl Oriented synthetic crystal assemblies
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
JP3540256B2 (ja) 2000-07-25 2004-07-07 マイクロ・ダイヤモンド株式会社 単結晶ダイヤモンドをその先端に有したドリル
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
JP4385764B2 (ja) * 2003-12-26 2009-12-16 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法
JP4365251B2 (ja) 2004-03-31 2009-11-18 旭ダイヤモンド工業株式会社 ダイヤモンドスクライバー及びダイヤモンドスクライバーの製造方法
JP4461218B2 (ja) 2005-05-31 2010-05-12 並木精密宝石株式会社 炭素材料の処理方法
JP4908409B2 (ja) * 2005-06-20 2012-04-04 日本電信電話株式会社 ダイヤモンド半導体素子およびその製造方法
US9133566B2 (en) * 2005-12-09 2015-09-15 Element Six Technologies Limited High crystalline quality synthetic diamond
SG157973A1 (en) * 2008-06-18 2010-01-29 Indian Inst Technology Bombay Method for growing monocrystalline diamonds
JP4849691B2 (ja) * 2008-12-25 2012-01-11 独立行政法人産業技術総合研究所 大面積ダイヤモンド結晶基板及びその製造方法
US20120302045A1 (en) 2009-12-16 2012-11-29 Hideaki Yamada Method for producing mosaic diamond
JP2012031000A (ja) * 2010-07-29 2012-02-16 Kobe Steel Ltd 配列化ダイヤモンド膜およびその製造方法
JP5601634B2 (ja) * 2010-11-24 2014-10-08 住友電気工業株式会社 大面積ｃｖｄダイヤモンド単結晶の製造方法、及びこれによって得られた大面積ｃｖｄダイヤモンド単結晶
EP2656374B1 (en) * 2010-12-23 2018-02-21 Element Six Technologies Limited Controlling doping of synthetic diamond material
JP5418621B2 (ja) * 2012-02-16 2014-02-19 住友電気工業株式会社 ダイヤモンド単結晶基板
JP6037387B2 (ja) * 2013-03-01 2016-12-07 国立研究開発法人産業技術総合研究所 ダイヤモンドｎｖ光学中心を有するダイヤモンド単結晶
RU2577355C1 (ru) * 2014-09-01 2016-03-20 Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук Способ получения монокристаллических алмазных эпитаксиальных пленок большой площади
CN104911702B (zh) * 2015-04-29 2017-07-28 西安交通大学 基于自组装工艺的高质量单晶金刚石生长方法
GB201511806D0 (en) * 2015-07-06 2015-08-19 Element Six Uk Ltd Single crystal synthetic diamond
EP3326729B1 (en) 2015-07-22 2020-02-26 Sumitomo Electric Hardmetal Corp. Diamond drawing die

Also Published As

Publication number Publication date
JP2020518537A (ja) 2020-06-25
CN110914204A (zh) 2020-03-24
US20200199778A1 (en) 2020-06-25
TWI706061B (zh) 2020-10-01
KR102372059B1 (ko) 2022-03-07
KR20190134726A (ko) 2019-12-04
CN110914204B (zh) 2022-06-03
WO2018199845A1 (en) 2018-11-01
EP3615482A4 (en) 2020-11-25
JP7256753B2 (ja) 2023-04-12
TW201842243A (zh) 2018-12-01
EP3615482A1 (en) 2020-03-04

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