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SG11201610188PA - Resist underlayer film-forming composition - Google Patents

Resist underlayer film-forming composition

Info

Publication number
SG11201610188PA
SG11201610188PA SG11201610188PA SG11201610188PA SG11201610188PA SG 11201610188P A SG11201610188P A SG 11201610188PA SG 11201610188P A SG11201610188P A SG 11201610188PA SG 11201610188P A SG11201610188P A SG 11201610188PA SG 11201610188P A SG11201610188P A SG 11201610188PA
Authority
SG
Singapore
Prior art keywords
forming composition
underlayer film
resist underlayer
resist
film
Prior art date
Application number
SG11201610188PA
Other languages
English (en)
Inventor
Hirokazu Nishimaki
Keisuke Hashimoto
Takafumi Endo
Rikimaru Sakamoto
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of SG11201610188PA publication Critical patent/SG11201610188PA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/02Condensation polymers of aldehydes or ketones with phenols only of ketones
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D161/00Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
    • C09D161/04Condensation polymers of aldehydes or ketones with phenols only
    • C09D161/16Condensation polymers of aldehydes or ketones with phenols only of ketones with phenols
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094Multilayer resist systems, e.g. planarising layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11201610188PA 2014-06-16 2015-05-01 Resist underlayer film-forming composition SG11201610188PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014123225 2014-06-16
PCT/JP2015/063097 WO2015194273A1 (ja) 2014-06-16 2015-05-01 レジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
SG11201610188PA true SG11201610188PA (en) 2017-01-27

Family

ID=54935267

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201610188PA SG11201610188PA (en) 2014-06-16 2015-05-01 Resist underlayer film-forming composition

Country Status (7)

Country Link
US (1) US10191374B2 (ja)
JP (1) JP6471873B2 (ja)
KR (1) KR102134674B1 (ja)
CN (1) CN106462074B (ja)
SG (1) SG11201610188PA (ja)
TW (1) TWI658089B (ja)
WO (1) WO2015194273A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110383173B (zh) * 2017-03-10 2023-05-09 Jsr株式会社 抗蚀剂下层膜形成用组合物、抗蚀剂下层膜及其形成方法和形成有图案的基板的制造方法
JP6853716B2 (ja) * 2017-03-31 2021-03-31 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
US11609498B2 (en) 2017-12-20 2023-03-21 Merck Patent Gmbh Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating
CN112166379A (zh) 2018-05-25 2021-01-01 日产化学株式会社 使用了环式羰基化合物的抗蚀剂下层膜形成用组合物
JP6981945B2 (ja) 2018-09-13 2021-12-17 信越化学工業株式会社 パターン形成方法
TW202104202A (zh) * 2019-04-26 2021-02-01 日商三菱瓦斯化學股份有限公司 光學零件形成用組成物
KR102335033B1 (ko) * 2019-08-30 2021-12-02 삼성에스디아이 주식회사 중합체, 하드마스크 조성물 및 패턴 형성 방법
CA3161924A1 (en) * 2020-01-09 2021-07-15 Tamon Itahashi Phloroglucinolic resins, methods of making, and uses in rubber compositions
JP2024116011A (ja) 2023-02-15 2024-08-27 信越化学工業株式会社 パターン形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4539845B2 (ja) 2005-03-17 2010-09-08 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
KR100655064B1 (ko) * 2005-05-27 2006-12-06 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
JP4659678B2 (ja) 2005-12-27 2011-03-30 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
JP4662063B2 (ja) 2006-05-25 2011-03-30 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
JP5157560B2 (ja) 2008-03-21 2013-03-06 Jsr株式会社 レジスト下層膜形成用組成物及びそれを用いたパターン形成方法
JP5125825B2 (ja) 2008-07-07 2013-01-23 Jsr株式会社 多層レジストプロセス用下層膜形成組成物
JP5556773B2 (ja) * 2010-09-10 2014-07-23 信越化学工業株式会社 ナフタレン誘導体及びその製造方法、レジスト下層膜材料、レジスト下層膜形成方法及びパターン形成方法
KR101423171B1 (ko) * 2010-12-30 2014-07-25 제일모직 주식회사 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR101859427B1 (ko) * 2011-07-01 2018-06-27 박정열 원자로 증기발생기의 노즐댐 설치 및 제거용 로봇장치
KR20140090144A (ko) * 2011-09-30 2014-07-16 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 플루오렌 구조를 가지는 수지 및 리소그래피용 하층막 형성재료
KR101855506B1 (ko) * 2011-10-13 2018-05-08 주식회사 동진쎄미켐 방향족 고리 함유 고분자 및 이를 포함하는 레지스트 하층막 조성물
JP6137486B2 (ja) 2012-02-01 2017-05-31 日産化学工業株式会社 複素環を含む共重合樹脂を含むレジスト下層膜形成組成物
JP5925721B2 (ja) * 2012-05-08 2016-05-25 信越化学工業株式会社 有機膜材料、これを用いた有機膜形成方法及びパターン形成方法
JP5894106B2 (ja) * 2012-06-18 2016-03-23 信越化学工業株式会社 レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
JP5948187B2 (ja) * 2012-08-30 2016-07-06 富士フイルム株式会社 パターン形成方法、並びに、これを用いた電子デバイスの製造方法
KR102066229B1 (ko) * 2013-03-26 2020-01-15 주식회사 동진쎄미켐 레지스트 하층막 조성물 및 이를 이용한 패턴 형성 방법

Also Published As

Publication number Publication date
TWI658089B (zh) 2019-05-01
CN106462074A (zh) 2017-02-22
US20170153548A1 (en) 2017-06-01
JPWO2015194273A1 (ja) 2017-04-20
CN106462074B (zh) 2020-06-09
US10191374B2 (en) 2019-01-29
WO2015194273A1 (ja) 2015-12-23
KR102134674B1 (ko) 2020-07-16
KR20170017888A (ko) 2017-02-15
TW201609938A (zh) 2016-03-16
JP6471873B2 (ja) 2019-02-20

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