SG11201610188PA - Resist underlayer film-forming composition - Google Patents
Resist underlayer film-forming compositionInfo
- Publication number
- SG11201610188PA SG11201610188PA SG11201610188PA SG11201610188PA SG11201610188PA SG 11201610188P A SG11201610188P A SG 11201610188PA SG 11201610188P A SG11201610188P A SG 11201610188PA SG 11201610188P A SG11201610188P A SG 11201610188PA SG 11201610188P A SG11201610188P A SG 11201610188PA
- Authority
- SG
- Singapore
- Prior art keywords
- forming composition
- underlayer film
- resist underlayer
- resist
- film
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/02—Condensation polymers of aldehydes or ketones with phenols only of ketones
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
- C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
- C09D161/16—Condensation polymers of aldehydes or ketones with phenols only of ketones with phenols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014123225 | 2014-06-16 | ||
PCT/JP2015/063097 WO2015194273A1 (ja) | 2014-06-16 | 2015-05-01 | レジスト下層膜形成組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201610188PA true SG11201610188PA (en) | 2017-01-27 |
Family
ID=54935267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201610188PA SG11201610188PA (en) | 2014-06-16 | 2015-05-01 | Resist underlayer film-forming composition |
Country Status (7)
Country | Link |
---|---|
US (1) | US10191374B2 (ja) |
JP (1) | JP6471873B2 (ja) |
KR (1) | KR102134674B1 (ja) |
CN (1) | CN106462074B (ja) |
SG (1) | SG11201610188PA (ja) |
TW (1) | TWI658089B (ja) |
WO (1) | WO2015194273A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110383173B (zh) * | 2017-03-10 | 2023-05-09 | Jsr株式会社 | 抗蚀剂下层膜形成用组合物、抗蚀剂下层膜及其形成方法和形成有图案的基板的制造方法 |
JP6853716B2 (ja) * | 2017-03-31 | 2021-03-31 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
US11609498B2 (en) | 2017-12-20 | 2023-03-21 | Merck Patent Gmbh | Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating |
CN112166379A (zh) | 2018-05-25 | 2021-01-01 | 日产化学株式会社 | 使用了环式羰基化合物的抗蚀剂下层膜形成用组合物 |
JP6981945B2 (ja) | 2018-09-13 | 2021-12-17 | 信越化学工業株式会社 | パターン形成方法 |
TW202104202A (zh) * | 2019-04-26 | 2021-02-01 | 日商三菱瓦斯化學股份有限公司 | 光學零件形成用組成物 |
KR102335033B1 (ko) * | 2019-08-30 | 2021-12-02 | 삼성에스디아이 주식회사 | 중합체, 하드마스크 조성물 및 패턴 형성 방법 |
CA3161924A1 (en) * | 2020-01-09 | 2021-07-15 | Tamon Itahashi | Phloroglucinolic resins, methods of making, and uses in rubber compositions |
JP2024116011A (ja) | 2023-02-15 | 2024-08-27 | 信越化学工業株式会社 | パターン形成方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4539845B2 (ja) | 2005-03-17 | 2010-09-08 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
KR100655064B1 (ko) * | 2005-05-27 | 2006-12-06 | 제일모직주식회사 | 반사방지성을 갖는 하드마스크 조성물 |
JP4659678B2 (ja) | 2005-12-27 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP4662063B2 (ja) | 2006-05-25 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
JP5157560B2 (ja) | 2008-03-21 | 2013-03-06 | Jsr株式会社 | レジスト下層膜形成用組成物及びそれを用いたパターン形成方法 |
JP5125825B2 (ja) | 2008-07-07 | 2013-01-23 | Jsr株式会社 | 多層レジストプロセス用下層膜形成組成物 |
JP5556773B2 (ja) * | 2010-09-10 | 2014-07-23 | 信越化学工業株式会社 | ナフタレン誘導体及びその製造方法、レジスト下層膜材料、レジスト下層膜形成方法及びパターン形成方法 |
KR101423171B1 (ko) * | 2010-12-30 | 2014-07-25 | 제일모직 주식회사 | 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스 |
KR101859427B1 (ko) * | 2011-07-01 | 2018-06-27 | 박정열 | 원자로 증기발생기의 노즐댐 설치 및 제거용 로봇장치 |
KR20140090144A (ko) * | 2011-09-30 | 2014-07-16 | 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 | 플루오렌 구조를 가지는 수지 및 리소그래피용 하층막 형성재료 |
KR101855506B1 (ko) * | 2011-10-13 | 2018-05-08 | 주식회사 동진쎄미켐 | 방향족 고리 함유 고분자 및 이를 포함하는 레지스트 하층막 조성물 |
JP6137486B2 (ja) | 2012-02-01 | 2017-05-31 | 日産化学工業株式会社 | 複素環を含む共重合樹脂を含むレジスト下層膜形成組成物 |
JP5925721B2 (ja) * | 2012-05-08 | 2016-05-25 | 信越化学工業株式会社 | 有機膜材料、これを用いた有機膜形成方法及びパターン形成方法 |
JP5894106B2 (ja) * | 2012-06-18 | 2016-03-23 | 信越化学工業株式会社 | レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法 |
JP5948187B2 (ja) * | 2012-08-30 | 2016-07-06 | 富士フイルム株式会社 | パターン形成方法、並びに、これを用いた電子デバイスの製造方法 |
KR102066229B1 (ko) * | 2013-03-26 | 2020-01-15 | 주식회사 동진쎄미켐 | 레지스트 하층막 조성물 및 이를 이용한 패턴 형성 방법 |
-
2015
- 2015-05-01 JP JP2016529156A patent/JP6471873B2/ja active Active
- 2015-05-01 WO PCT/JP2015/063097 patent/WO2015194273A1/ja active Application Filing
- 2015-05-01 SG SG11201610188PA patent/SG11201610188PA/en unknown
- 2015-05-01 US US15/316,425 patent/US10191374B2/en active Active
- 2015-05-01 CN CN201580030552.XA patent/CN106462074B/zh active Active
- 2015-05-01 KR KR1020167032260A patent/KR102134674B1/ko active IP Right Grant
- 2015-05-25 TW TW104116676A patent/TWI658089B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI658089B (zh) | 2019-05-01 |
CN106462074A (zh) | 2017-02-22 |
US20170153548A1 (en) | 2017-06-01 |
JPWO2015194273A1 (ja) | 2017-04-20 |
CN106462074B (zh) | 2020-06-09 |
US10191374B2 (en) | 2019-01-29 |
WO2015194273A1 (ja) | 2015-12-23 |
KR102134674B1 (ko) | 2020-07-16 |
KR20170017888A (ko) | 2017-02-15 |
TW201609938A (zh) | 2016-03-16 |
JP6471873B2 (ja) | 2019-02-20 |
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