KR960015900A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

Info

Publication number: KR960015900A
Authority: KR; South Korea
Prior art keywords: manufacturing; semiconductor device; semiconductor
Prior art date: 1994-10-06

Application number

KR1019950034385A

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1994-10-06

Filing date

1995-10-06

Publication date

1996-05-22

1995-10-06 Application filed filed Critical

1996-05-22 Publication of KR960015900A publication Critical patent/KR960015900A/ko

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

KR1019950034385A 1994-10-06 1995-10-06 반도체 장치 및 그 제조방법 KR960015900A (ko)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP24314194		1994-10-06

Publications (1)

Publication Number	Publication Date
KR960015900A true KR960015900A (ko)	1996-05-22

Family

ID=26536126

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019950034385A KR960015900A (ko)	1994-10-06	1995-10-06	반도체 장치 및 그 제조방법

Country Status (2)

Country	Link
US (2)	US5828119A (ko)
KR (1)	KR960015900A (ko)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW329049B (en) *	1997-02-24	1998-04-01	Winbond Electronics Corp	The circuit for preventing latch-up the multi-power-on IC
JPH1140564A (ja) *	1997-07-18	1999-02-12	Nec Corp	半導体装置およびその製造方法
US6410964B1 (en) *	1998-03-31	2002-06-25	Nec Corporation	Semiconductor device capable of preventing gate oxide film from damage by plasma process and method of manufacturing the same
JP3461443B2 (ja)	1998-04-07	2003-10-27	松下電器産業株式会社	半導体装置、半導体装置の設計方法、記録媒体および半導体装置の設計支援装置
US6078068A (en) *	1998-07-15	2000-06-20	Adaptec, Inc.	Electrostatic discharge protection bus/die edge seal
JP3298528B2 (ja) *	1998-12-10	2002-07-02	日本電気株式会社	回路設計方法および装置、情報記憶媒体、集積回路装置
US6200884B1 (en) *	1999-07-31	2001-03-13	Advanced Micro Devices, Inc.	Method for shaping photoresist mask to improve high aspect ratio ion implantation
US7170115B2 (en) *	2000-10-17	2007-01-30	Matsushita Electric Industrial Co., Ltd.	Semiconductor integrated circuit device and method of producing the same
JP5000055B2 (ja) *	2001-09-19	2012-08-15	ルネサスエレクトロニクス株式会社	半導体装置
US6566716B2 (en)	2001-09-28	2003-05-20	Intel Corporation	Arrangements to reduce charging damage in structures of integrated circuits using polysilicon or metal plate(s)
US6624480B2 (en) *	2001-09-28	2003-09-23	Intel Corporation	Arrangements to reduce charging damage in structures of integrated circuits
US6414358B1 (en)	2001-09-28	2002-07-02	Intel Corporation	Arrangements to reduce charging damage in structures of integrated circuits
US7178126B2 (en) *	2004-01-21	2007-02-13	Oki Electric Industry Co., Ltd.	Method of protecting a semiconductor integrated circuit from plasma damage
US7250660B1 (en) *	2004-07-14	2007-07-31	Altera Corporation	ESD protection that supports LVDS and OCT
JP4726462B2 (ja) *	2004-10-29	2011-07-20	ルネサスエレクトロニクス株式会社	半導体集積装置、その設計方法、設計装置、プログラム、製造方法、および製造装置
JP4272142B2 (ja) *	2004-12-07	2009-06-03	株式会社ルネサステクノロジ	スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール
US7285837B2 (en) *	2005-01-17	2007-10-23	System General Corp.	Electrostatic discharge device integrated with pad
KR100745911B1 (ko) *	2005-12-30	2007-08-02	주식회사 하이닉스반도체	반도체 소자
JP4993941B2 (ja) *	2006-04-27	2012-08-08	パナソニック株式会社	半導体集積回路及びこれを備えたシステムｌｓｉ
JP5131814B2 (ja) *	2007-02-27	2013-01-30	ルネサスエレクトロニクス株式会社	半導体装置
US7798703B2 (en) *	2007-05-09	2010-09-21	Infineon Technologies Ag	Apparatus and method for measuring local surface temperature of semiconductor device
US8089125B2 (en) *	2007-06-07	2012-01-03	Advanced Micro Devices, Inc.	Integrated circuit system with triode
KR20090009441A (ko) *	2007-07-20	2009-01-23	삼성전자주식회사	반도체 장치의 테스트 구조물 및 그 형성 방법
TWI382524B (zh) *	2008-10-16	2013-01-11	Holtek Semiconductor Inc	Ｅｓｄ防護裝置及其防護方法
JP2013232620A (ja) *	2012-01-27	2013-11-14	Rohm Co Ltd	チップ部品
CN104282662A (zh) *	2013-07-08	2015-01-14	中芯国际集成电路制造(上海)有限公司	等离子损伤测试结构以及等离子损伤测试方法
WO2019125497A1 (en) *	2017-12-22	2019-06-27	Intel Corporation	Interconnect structures for integrated circuits
CN112466772A (zh) *	2020-11-27	2021-03-09	长江存储科技有限责任公司	一种测试组件及测试方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3667009A (en) *	1970-12-28	1972-05-30	Motorola Inc	Complementary metal oxide semiconductor gate protection diode
US3712995A (en) *	1972-03-27	1973-01-23	Rca Corp	Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPH01128465A (ja) *	1987-11-13	1989-05-22	Fujitsu Ltd	静電破壊防止素子を具備した半導体装置
JPH01194349A (ja) *	1988-01-29	1989-08-04	Toshiba Corp	半導体装置
US5285082A (en) *	1989-11-08	1994-02-08	U.S. Philips Corporation	Integrated test circuits having pads provided along scribe lines
US5159518A (en) *	1990-01-17	1992-10-27	Vlsi Technology, Inc.	Input protection circuit for CMOS devices
JPH0434963A (ja) *	1990-05-30	1992-02-05	Nec Ic Microcomput Syst Ltd	半導体装置
JPH05190623A (ja) *	1992-01-10	1993-07-30	Nec Corp	半導体集積回路装置
JPH0661298A (ja) *	1992-08-11	1994-03-04	Hitachi Ltd	半導体集積回路装置
KR970009101B1 (ko) *	1993-08-18	1997-06-05	엘지반도체 주식회사	정전기(esd) 보호회로의 제조 방법
JP2874583B2 (ja) *	1995-02-10	1999-03-24	日本電気株式会社	半導体装置の入力保護回路

1995
- 1995-10-06 KR KR1019950034385A patent/KR960015900A/ko active Search and Examination
1997
- 1997-11-21 US US08/976,006 patent/US5828119A/en not_active Expired - Lifetime
1998
- 1998-08-07 US US09/130,604 patent/US5955764A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US5828119A (en)	1998-10-27
US5955764A (en)	1999-09-21

Publication	Publication Date	Title
KR960009110A (ko)	1996-03-22	반도체 장치 및 그 제조방법
KR960009107A (ko)	1996-03-22	반도체장치와 그 제조방법
KR960015900A (ko)	1996-05-22	반도체 장치 및 그 제조방법
KR950034612A (ko)	1995-12-28	반도체 구조물 및 그 제조 방법
DE69721411D1 (de)	2003-06-05	Halbleiteranordnung und Herstellungsverfahren dafür
KR960012575A (ko)	1996-04-20	반도체 장치 제조 방법
DE69534636D1 (de)	2005-12-29	Halbleitervorrichtung und deren Herstellungsverfahren
DE69522514D1 (de)	2001-10-11	Halbleiteranordnung und Herstellungsverfahren
DE69526539D1 (de)	2002-06-06	Halbleiteranordnung und Herstellungsverfahren
DE69527330D1 (de)	2002-08-14	Halbleiteranordnung und Herstellungsverfahren
DE69435205D1 (de)	2009-05-28	Dünne Halbleitervorrichtung und Herstellungsverfahren
DE69413602D1 (de)	1998-11-05	Halbleiteranordnung und Herstellungsverfahren
DE69737588D1 (de)	2007-05-24	Halbleiteranordnung und Herstellungsverfahren dafür
DE69323127D1 (de)	1999-03-04	Halbleitervorrichtung und Herstellungsverfahren
SG44315A1 (en)	1997-12-19	Semiconductor device and method manufacturing thereof
DE59601335D1 (de)	1999-04-01	Halbleiterbauelement und Herstellverfahren
DE69424728D1 (de)	2000-07-06	Halbleiteranordnung und zugehörige Herstellungsmethode
DE69635397D1 (de)	2005-12-15	Halbleitervorrichtung mit Chipabmessungen und Herstellungsverfahren
DE69414208D1 (de)	1998-12-03	Optischer Halbleitervorrichtung und Herstellungsverfahren
KR970004015A (ko)	1997-01-29	반도체장치 및 그의 제조방법
DE69430511D1 (de)	2002-06-06	Halbleiteranordnung und Herstellungverfahren
KR960012574A (ko)	1996-04-20	반도체장치 제조방법
DE69738012D1 (de)	2007-09-27	Halbleitervorrichtung und deren Herstellungsverfahren
DE69325343D1 (de)	1999-07-22	Halbleiteranordnung und Herstellungsverfahren dafür
KR960012496A (ko)	1996-04-20	반도체기억장치 및 그 제조방법

Legal Events

Date	Code	Title	Description
1995-10-06	A201	Request for examination
1998-06-23	E902	Notification of reason for refusal
1998-10-20	AMND	Amendment
1998-11-28	E601	Decision to refuse application
1999-03-05	J201	Request for trial against refusal decision
1999-04-01	AMND	Amendment
1999-05-15	B601	Maintenance of original decision after re-examination before a trial
2000-02-23	J301	Trial decision	Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 19990305 Effective date: 20000222