KR940002438B1 - Method of making semiconductor device - Google Patents

Abstract

depositing a buffer oxide layer and first nitride layer on a substrate, and etching the nitride layer of an active area; filling the etched portion of the nitride layer with SOG, etching the resultant structure to create a step height with the nitride layer, and depositing a second nitride layer; anisotropically etching the second nitride layer to form the sidewalls of the second nitride layer, and removing the SOG and the buffer oxide layer under the SOG; forming a gate oxide layer on the portion where the SOG is removed to deposit a gate poly; and anisotropically etching the gate poly, and stripping the sidewalls of the first and second nitride layers, thereby enabling a submicron pattern to be formed.

Description

Semiconductor Micro Device Manufacturing Method

1 is a cross-sectional view of a conventional semiconductor device manufacturing process.

2 is a cross-sectional view of a semiconductor microdevice fabrication process of the present invention.

* Explanation of symbols for main parts of the drawings

1: silicon substrate 2: buffer oxide film

3: first nitride film 4: photoresist

5: SOG 6: second nitride film

7: side wall 8: gate oxide film

9: gate pulley

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor microelement of submicron or less, and more particularly, to patterning of a semiconductor microelement, which can be applied at the current technology and equipment level.

The limit of patterning using current optical lithography technology is known to be 0.2 ~ 0.4㎛ in process.

To this end, in the related art, as shown in FIG. 1A, first, an active region and a field region are formed on a silicon substrate, and then a gate oxide film, a gate poly, and a high temperature oxide (HTO) are sequentially deposited. Subsequently, the gate mask is formed and etched with the photoresist, thereby obtaining a structure in which the gate oxide film, the gate poly, and the HTO are stacked. The gate mask is then peeled off to form a gate (FIG. 1b).

In the device manufacturing method as described above, patterning of 0.4 μm or less is impossible due to limitations in equipment and technology. As a result, the device becomes relatively large and faces the limit of integration.

The present invention has been made to solve such a problem, and has made it possible to realize a fine pattern by using selectivity and anisotropic etch between the respective constituent materials.

Referring to Figure 2 of the accompanying drawings, the manufacturing method of the present invention will be described.

First, as shown in FIG. 2A, the buffer oxide film 2 and the first nitride film 3 are sequentially deposited on the silicon substrate 1 on which the active region and the field region are formed, and then, the photoresist 4 mask is used. The nitride layer 3 layer of a part of the active region is etched. Following removal of the mask, the etched portion of the nitride film layer is filled with SOG (5) (Spin On Glass) and etched to create a step of the existing nitride film layer, and then the second nitride film 6 layer is deposited thereon. (Figure 2b).

Subsequently, the second nitride layer is anisotropically etched to form sidewalls 7 of the second nitride layer on top of corners of the SOG layer, and then the SOG 5 and the buffer oxide layer 2 under the SOG are removed as a wet etch. do. Thereafter, the gate oxide film 8 is thinly deposited in the place where the SOG is removed, and the gate poly 9 is thickly deposited (FIG. 2C).

The thickly deposited gate poly is anisotropically dry etched without a mask to form an actual gate portion (FIG. 2D), and the sidewalls of the first nitride film and the second nitride film are removed, thereby completing all processes (FIG. 2D). ).

By using such a manufacturing method it is possible to form a fine pattern that cannot be defined by optical lithography techniques.

Claims (1)

Depositing a buffer oxide layer and a first nitride layer in order on the silicon substrate on which the active region and the field region are formed, and then etching a nitride layer of a portion of the active region using a photoresist mask, and a portion where the nitride layer is etched Is filled with SOG and etched to form a step with an existing nitride layer, and then depositing a second nitride layer, and anisotropically etching the second nitride layer to form sidewalls of the second nitride layer on top of SOG edges. Removing both the SOG and the buffer oxide film under the SOG as a wet etch, and subsequently forming a gate oxide film where the SOG is removed, and then depositing a thick gate poly, and depositing the thickly deposited gate poly. And anisotropic dry etching without a mask, and stripping sidewalls of the first nitride film and the second nitride film. Semiconductor micro device manufacturing method.