KR830006987A - 트랜지스터 보호회로 - Google Patents
트랜지스터 보호회로 Download PDFInfo
- Publication number
- KR830006987A KR830006987A KR1019810002263A KR810002263A KR830006987A KR 830006987 A KR830006987 A KR 830006987A KR 1019810002263 A KR1019810002263 A KR 1019810002263A KR 810002263 A KR810002263 A KR 810002263A KR 830006987 A KR830006987 A KR 830006987A
- Authority
- KR
- South Korea
- Prior art keywords
- bias
- base
- transition
- semiconductor device
- emitter
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 230000007704 transition Effects 0.000 claims 5
- 230000001681 protective effect Effects 0.000 claims 4
- 238000010586 diagram Methods 0.000 description 3
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Protection Of Static Devices (AREA)
- Emergency Protection Circuit Devices (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 보호회로를 합체한 회로망을 포함하는 텔레비젼 수상기의 일부분을 도시한 개요도.
제2도 내지 제5도는 본 발명에 따른 보호회로와 보호될 회로의 실시예를 도시한 회로도.
제6도는 제2도 내지 제5도에 도시된 회로들의 작동을 이해하는데 도움이 되는 도면.
Claims (1)
- 본문에서 설명되고 도면에서 예시된 바와 같이, 전이들이 나타날 수 있는 회로점에 접속된 반도체 접합을 포함하며 전이가 주어진 레벨을 초과할때 손상받을 수 있는 반도체 장치를 스튜리어스 고전압 전이에 의한 전기적 과부하 손상으로부터 보호하기 위한 장치에 있어서, 상기 보호장치가 작동전위에 접속된 콜렉터전극, 베이스전극 및 상기 회로점에 접속된 에미터 전극을 갖는 보호트랜지스터와 상기 베이스 전극의 바이어스가 상기 반도체 장치의 바이어스 상이 회로점의 바이어스에 무관하게 결정되는 방법으로 기준 바이어스 전압을 상기 베이스 전극에 인가하기 위한 장치를 포함하며, 상기 전이가 없을때 상기 보호트랜지스터를 정상적으로 비도전 상태로 유지하기 위하여 상기 기준 바이어스 전압이 상기 보호 트랜지스터를 콜렉터-베이스 접합부를 역방향으로 바이어스 하며 상기 보호 트랜지스터의 베이스-에미터 접합부를 역방향으로 바이어스시키고, 상기 기준 바이어스 전압의 레벨이 전이 전류들을 상기 반도체 장치로부터 멀리 전환시키기 위하여 상기 보호트랜지스터의 에미터-콜렉터 통로가 도전되도록 상기 보호트랜지스터의 베이스-에미터 접합부가 주어진 레벨밑의 임계레벨을 초과하는 저이에 응답하여 순방향으로 바이어스되도록 하는 레벨인 것을 특징으로 하는 트랜지스터 보호회로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US163,149 | 1980-06-26 | ||
US06/163,149 US4302792A (en) | 1980-06-26 | 1980-06-26 | Transistor protection circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
KR830006987A true KR830006987A (ko) | 1983-10-12 |
KR880002637B1 KR880002637B1 (ko) | 1988-12-07 |
Family
ID=22588701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019810002263A KR880002637B1 (ko) | 1980-06-26 | 1981-06-22 | 트랜지스터 보호회로 |
Country Status (22)
Country | Link |
---|---|
US (1) | US4302792A (ko) |
JP (1) | JPS5739622A (ko) |
KR (1) | KR880002637B1 (ko) |
AT (1) | AT395921B (ko) |
AU (1) | AU545703B2 (ko) |
BE (1) | BE889367A (ko) |
CA (1) | CA1164961A (ko) |
DE (1) | DE3125198A1 (ko) |
DK (1) | DK172525B1 (ko) |
ES (1) | ES503211A0 (ko) |
FI (1) | FI69733C (ko) |
FR (1) | FR2485824A1 (ko) |
GB (1) | GB2079085B (ko) |
HK (1) | HK17587A (ko) |
IT (1) | IT1136756B (ko) |
MY (1) | MY8500798A (ko) |
NL (1) | NL192902C (ko) |
NZ (1) | NZ197533A (ko) |
PL (1) | PL136801B1 (ko) |
PT (1) | PT73071B (ko) |
SE (1) | SE445281B (ko) |
ZA (1) | ZA813576B (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1210916B (it) * | 1982-08-05 | 1989-09-29 | Ates Componenti Elettron | Transistore integrato protetto contro le sovratensioni. |
US4441137A (en) * | 1982-08-30 | 1984-04-03 | Rca Corporation | High voltage protection for an output circuit |
DE3240280A1 (de) * | 1982-10-30 | 1984-05-03 | Robert Bosch Gmbh, 7000 Stuttgart | Schutzschaltung fuer analog- und digitalsignale |
US4499673A (en) * | 1983-03-07 | 1985-02-19 | Ford Motor Company | Reverse voltage clamp circuit |
JPS6030660A (ja) * | 1983-07-29 | 1985-02-16 | Aoba Kasei Kk | 桜桃の容器内着色法 |
DE3422132C1 (de) * | 1984-06-14 | 1986-01-09 | Texas Instruments Deutschland Gmbh, 8050 Freising | Schutzschaltungsanordnung |
IT1218852B (it) * | 1984-10-31 | 1990-04-24 | Ates Componenti Elettron | Stabilizzatore elettronico di tensione, particolarmente per uso automobilistico, con protezione contro le sovratensioni transitorie di polarita' opposta a quella del generatore |
US4705322A (en) * | 1985-07-05 | 1987-11-10 | American Telephone And Telegraph Company, At&T Bell Laboratories | Protection of inductive load switching transistors from inductive surge created overvoltage conditions |
US4644293A (en) * | 1985-11-06 | 1987-02-17 | E-Systems, Inc. | RF pulse modulated amplifier having conduction angle control |
GB2204445B (en) * | 1987-03-06 | 1991-04-24 | Texas Instruments Ltd | Semiconductor switch |
JPH02280621A (ja) * | 1989-03-16 | 1990-11-16 | Siemens Ag | トランジスタ回路 |
JPH02280622A (ja) * | 1989-03-16 | 1990-11-16 | Siemens Ag | トランジスタ回路 |
IT1244209B (it) * | 1990-12-20 | 1994-07-08 | Sgs Thomson Microelectronics | Circuito di controllo di caratteristiche tensione/corrente particolarmente per la protezione di transistori di potenza |
IT1253683B (it) * | 1991-09-12 | 1995-08-22 | Sgs Thomson Microelectronics | Dispositivo a bassa corrente di perdita per la protezione di un circuito integrato da scariche elettrostatiche. |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1815617C3 (de) * | 1968-12-19 | 1978-11-30 | Robert Bosch Gmbh, 7000 Stuttgart | Einrichtung zum Entregen von Generatoren |
US3819952A (en) * | 1973-01-29 | 1974-06-25 | Mitsubishi Electric Corp | Semiconductor device |
JPS5321838B2 (ko) * | 1973-02-28 | 1978-07-05 | ||
DE2323183C2 (de) * | 1973-05-08 | 1986-01-30 | Sony Corp., Tokio/Tokyo | Überspannungsschutzschaltung für geregelte Stromversorgungsanlagen |
JPS50117347A (ko) * | 1974-02-28 | 1975-09-13 | ||
FR2320635A1 (fr) * | 1975-08-05 | 1977-03-04 | Thomson Csf | Dispositif de protection pour transistor, notamment pour transistor de circuit integre monolithique, et transistor pourvu d'un tel dispositif |
US4017882A (en) * | 1975-12-15 | 1977-04-12 | Rca Corporation | Transistor having integrated protection |
NL176322C (nl) * | 1976-02-24 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting met beveiligingsschakeling. |
US4133000A (en) * | 1976-12-13 | 1979-01-02 | General Motors Corporation | Integrated circuit process compatible surge protection resistor |
US4106048A (en) * | 1977-04-27 | 1978-08-08 | Rca Corp. | Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor |
DE2832766A1 (de) * | 1978-07-26 | 1980-02-07 | Bosch Gmbh Robert | Vorrichtung zum schutz einer elektrischen schaltungsanordnung gegen stoerimpulse |
-
1980
- 1980-06-26 US US06/163,149 patent/US4302792A/en not_active Expired - Lifetime
-
1981
- 1981-05-21 PT PT73071A patent/PT73071B/pt unknown
- 1981-05-25 IT IT21938/81A patent/IT1136756B/it active
- 1981-05-27 ZA ZA00813576A patent/ZA813576B/xx unknown
- 1981-06-18 CA CA000380150A patent/CA1164961A/en not_active Expired
- 1981-06-18 FI FI811919A patent/FI69733C/fi not_active IP Right Cessation
- 1981-06-18 SE SE8103869A patent/SE445281B/sv not_active IP Right Cessation
- 1981-06-19 ES ES503211A patent/ES503211A0/es active Granted
- 1981-06-19 AU AU71986/81A patent/AU545703B2/en not_active Expired
- 1981-06-22 KR KR1019810002263A patent/KR880002637B1/ko not_active IP Right Cessation
- 1981-06-23 GB GB8119310A patent/GB2079085B/en not_active Expired
- 1981-06-23 JP JP56098165A patent/JPS5739622A/ja active Granted
- 1981-06-24 BE BE0/205203A patent/BE889367A/fr not_active IP Right Cessation
- 1981-06-24 PL PL1981231846A patent/PL136801B1/pl unknown
- 1981-06-25 FR FR8112551A patent/FR2485824A1/fr active Granted
- 1981-06-25 NZ NZ197533A patent/NZ197533A/en unknown
- 1981-06-25 DK DK198102814A patent/DK172525B1/da not_active IP Right Cessation
- 1981-06-25 NL NL8103084A patent/NL192902C/nl not_active IP Right Cessation
- 1981-06-26 AT AT0286181A patent/AT395921B/de not_active IP Right Cessation
- 1981-06-26 DE DE19813125198 patent/DE3125198A1/de active Granted
-
1985
- 1985-12-30 MY MY798/85A patent/MY8500798A/xx unknown
-
1987
- 1987-02-26 HK HK175/87A patent/HK17587A/xx not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application | ||
J2X1 | Appeal (before the patent court) |
Free format text: TRIAL NUMBER: 1986201000499; APPEAL AGAINST DECISION TO DECLINE REFUSAL |
|
E902 | Notification of reason for refusal | ||
N231 | Notification of change of applicant | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
EXPY | Expiration of term | ||
FPAY | Annual fee payment |
Payment date: 19961120 Year of fee payment: 9 |