KR20100066994A - Remote plasma system and plasma processing equipment having the same - Google Patents

Abstract

PURPOSE: A remote plasma system and a plasma processing apparatus including the same are provided to reduce a total size of the apparatus by omitting an additional high frequency generator which is applicable for the remote plasma system. CONSTITUTION: A processing chamber(210) includes an electrode unit(214) which is necessary to generate plasma-discharge for a film deposition process. A remote plasma unit(100) supplies remote plasma source into the processing chamber by generating the remote plasma source. A shared high-frequency generator(300) applies high frequency power with a first frequency to the electrode unit of the processing chamber. During a cleaning process, the shared high frequency generator applies the high frequency power with the first frequency to the remote plasma unit.

Description

Remote plasma system and plasma processing equipment having the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus such as chemical vapor deposition (CVD) equipment and the like, and more particularly, to a remote plasma apparatus and a plasma processing apparatus employing the same.

As is well known, the manufacture of semiconductor products such as integrated circuits often involves the formation of a film on a substrate such as a silicon wafer or liquid crystal display. The formation of such a film can be often performed by a plasma processing apparatus such as a chemical vapor deposition (CVD) apparatus for depositing film forming ions using plasma on a substrate to be treated.

Among various plasma processing apparatuses, a plasma processing apparatus in which a remote plasma apparatus for generating a cleaning gas is coupled to a process chamber is commonly used.

As a conventional technique, a plasma processing apparatus such as chemical vapor deposition equipment employing a remote plasma apparatus may be configured as shown in FIG.

1 is a block diagram of a chemical vapor deposition apparatus employing a general remote plasma apparatus.

Referring to the drawings, an apparatus configuration including a process chamber 210, a remote plasma apparatus 110 mounted on an upper portion of an upper wall of the process chamber 210, and a high frequency generator 310 is shown.

The apparatus of FIG. 1 may sequentially perform a film forming process for forming a film on a substrate such as a wafer or a liquid crystal display, and a chamber cleaning process for removing a film or particles coated in the process chamber 210.

First, in the film forming process, as the vacuum valve 218 is opened and pumping is performed by a vacuum pump (not shown) connected to the line 220, the internal pressure of the process chamber 210 goes into a vacuum state. When the vacuum pressure of the process chamber 210 reaches a predetermined value, the process source gas for film formation is supplied into the process chamber 210 through the shower head 212.

At this time, the high frequency power generated by the high frequency generator 310 is applied to the cathode 214 which functions as a lower electrode through the matching unit 320. When a high frequency power source is applied to the cathode 214 at a frequency of about 13.56 MHz at a power of about 10 KW, plasma discharge occurs by a high frequency electric field formed between the chamber upper wall serving as an anode and the cathode 214 so that the process source gas is generated. Dissociate. The film-forming ions in the dissociated process source gas are applied by chemical vapor deposition on the substrate that is electrostatically adsorbed or placed on the cathode 214 to form a desired film.

When a certain thickness of film is formed on the substrate as time passes, the driving of the high frequency generator 310 is stopped and the film forming process is completed.

After the film forming process is completed, the chamber cleaning process (cleaning process) is started. The remote plasma apparatus 110 is driven in the chamber cleaning process. The high frequency generator 112 in the remote plasma apparatus 110 generates about 5 KW to 8 KW of power having a frequency of about 400 KHz as a high frequency power source. When the high frequency power is applied to the cleaning plasma generating unit 116 through the matching unit 114, the gas injected through the gas injection hole 118 is in the ion, electron, and radical states due to the plasma discharge phenomenon caused by the high frequency electric field. Decompose The decomposed cleaning gas is supplied as a remote plasma source to the inside of the process chamber 210 through the outlet 120 of the cleaning plasma generating unit 116 to perform cleaning and then exhausted along the exhaust direction AR1.

After chamber cleaning has been performed for a set time, the high frequency generator 112 is powered off and the chamber cleaning process is completed.

However, the plasma processing apparatus as described with reference to FIG. 1 is a high frequency generator 310 for applying a high frequency power source to the process chamber 210 in the film forming process of the high frequency generator 112 which is used only for the remote plasma apparatus 110. ) There is a problem to be provided separately. That is, a high frequency generator 112, which is a power supply device for generating a high frequency power of about 400KHz frequency band for the cleaning process, is required separately inside or outside the remote plasma apparatus 110.

Here, the reason why the high frequency generator is independently provided is that the decomposition efficiency of dissociation of the injected gas by plasma discharge is relatively low, so that the remote plasma apparatus uses the same frequency of the high frequency power source generated by the high frequency generator 310. Because it was difficult to do.

Therefore, when operating the high frequency generator independently, there is a burden of increasing the size of the remote plasma apparatus or the plasma processing apparatus and increasing the cost of implementing the apparatus.

Accordingly, an object of the present invention is to provide a remote plasma apparatus using a high frequency generator in common and a plasma processing apparatus employing the same.

Another object of the present invention is to provide a remote plasma apparatus which can use a high frequency generator commonly used for the film forming process without having a high frequency generator independently, and a plasma processing apparatus employing the remote plasma apparatus.

Still another object of the present invention is to provide a chemical vapor deposition apparatus which can make the size of the remote plasma apparatus more compact and reduce the cost of implementing the apparatus.

It is still another object of the present invention to provide an improved remote plasma apparatus capable of increasing the gas decomposition efficiency dissociated by plasma discharge even at a relatively low power.

According to one exemplary aspect of the invention, a plasma processing apparatus is:

A process chamber having an electrode portion necessary for causing plasma discharge for the film forming process inside the chamber;

A remote plasma apparatus for generating a remote plasma source for performing a cleaning process and providing the remote plasma source to the process chamber;

In the film forming process, a high frequency power source having a first frequency is applied to the electrode portion of the process chamber, and in the cleaning process, a high frequency power source having the first frequency is applied to the remote plasma apparatus.

In the embodiment of the present invention, the remote plasma apparatus, by receiving the high frequency power source of the first frequency applied from the shared high frequency generator in the cleaning process to the inductive coil of the plasma reactor having a short portion, the remote plasma You can create a source.

In addition, the first frequency may be a frequency having a range of about 400KHz to about 14MHz.

In an embodiment of the present invention, the shared high frequency generator may be connected to a power switching unit for switching the high frequency power of the first frequency to the electrode unit or the remote plasma device.

According to another exemplary technical aspect of the present invention, a plasma processing apparatus includes:

A process chamber supporting an object to be processed and having an electrode portion inside the chamber necessary for causing plasma discharge for film formation;

A shared high frequency generator generating a first high frequency power source of a first frequency in a first operating mode and a second high frequency power source of a first frequency in a second operating mode;

Switching the power generated in the shared high frequency generator so that the first high frequency power of the first frequency is applied to the electrode portion of the process chamber in the first operation mode, the first frequency of the first frequency in the second operation mode And a remote plasma apparatus for generating a cleaning plasma source using a second high frequency power source and providing the generated source to the process chamber.

In an embodiment of the present invention, the remote plasma apparatus may generate the cleaning plasma source by receiving a second high frequency power source of the first frequency into an inductive coil of a plasma reactor having a shortened portion.

Preferably, the first frequency may be about 13.56 MHz, and the second high frequency power supply may be lower than the first high frequency power supply.

In an embodiment of the present invention, the remote plasma apparatus may include a pneumatically operated power switching unit for switching the power source.

In an embodiment of the present invention, the first operation mode may be a chemical vapor deposition process and the second operation mode may be a process chamber cleaning process.

According to another embodiment aspect of the present invention, chemical vapor deposition equipment is:

A process chamber supporting the object to be treated and having a cathode as one electrode necessary for causing plasma discharge;

A high frequency generator for applying a high frequency power source having a first frequency to the cathode during a film forming process for forming a chemical vapor deposition film on the object to be treated;

Plasma cleaning gas which is operatively connected to the high frequency generator in a cleaning process performed before and after the film forming process, receives the high frequency power of the first frequency into an inductive coil of a reactor having a shortened portion, and is decomposed by the high frequency power. And a remote plasma apparatus for generating a remote plasma source containing fluoride ions as a target.

According to another embodiment aspect of the present invention,

In the plasma processing apparatus having a process chamber provided with an electrostatic chuck inside the chamber and a high frequency generator for applying a high frequency power of a first frequency to the electrostatic chuck during the film forming process, a remote plasma source for performing the cleaning process is provided. Remote plasma devices that are applied to:

A switching unit for switching to use a high frequency power source of the first frequency of the high frequency generator even in a cleaning process performed after the film forming process so as to exclude a separate dedicated high frequency generator;

An inductive coil configured to receive the high frequency power of the first frequency applied through the switching unit in the cleaning process;

In order to generate the remote plasma source required to perform the cleaning process with the high frequency power source of the first frequency, a plasma reactor is formed that is surrounded by the inductive coil and has an outlet portion.

Preferably, the high frequency power source of the first frequency may be a power in the range of 2KW to 6KW having a frequency of several tens of megahertz band.

In an embodiment of the present invention, a matching circuit device for performing impedance matching may be further provided between the switching unit and the inductive coil so that maximum power is transmitted to the load.

According to the exemplary embodiment of the present invention, since a high frequency generator for applying high frequency power to the load of the process chamber can be commonly used in a remote plasma apparatus for generating a remote plasma source for chamber cleaning, it is used independently of the remote plasma apparatus. There is an effect that it is not necessary to provide a separate high frequency generator. Therefore, the size of the remote plasma apparatus can be made compact, and the apparatus implementation cost is also low. In addition, since the decomposition efficiency in which the injected gas is dissociated by the plasma discharge is high, there is an advantage that the performance of the remote plasma apparatus generating the remote plasma source is improved.

Hereinafter, the configuration and operation of a remote plasma apparatus using a high frequency generator and a plasma processing apparatus employing the same according to preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Meanwhile, in describing the embodiments of the present invention, detailed descriptions of well-known functions or configurations of related devices and circuit blocks will be omitted if it is determined that the gist of the present invention may be unnecessarily obscured.

In an embodiment of the present invention, in order to use one high frequency generator in common in the film forming process and the cleaning process, it can be configured as shown in FIG.

2 is a block diagram of a chemical vapor deposition apparatus employing a remote plasma apparatus according to an embodiment of the present invention.

Referring to the drawings, a process chamber 210 having an electrode portion 214 necessary for causing plasma discharge for a film forming process and a remote plasma source for performing a cleaning process are generated through the outlet 120. The remote plasma apparatus 100 provided to the process chamber 210 and a high frequency power of a first frequency are applied to the electrode portion 214 of the process chamber 210 in the film forming process, and to the remote plasma apparatus in the cleaning process. A configuration including a shared high frequency generator 300 for applying a high frequency power of the first frequency is shown.

In FIG. 2, the remote plasma apparatus 100 inducts a high frequency power source of the first frequency applied from the shared high frequency generator 300 in the cleaning process of the plasma reactor 117 having an enclosure 121. By receiving with the creative coil 119, the remote plasma source is generated with high density.

The first frequency may be a frequency having a range of about 400KHz to about 40.68MHz, for example, one of 400KHz, 13.56 MHz, 27.12 MHz, 40.68 MHz may be selectively set, preferably 13.56MHz Can be set.

A power switching unit 10 for switching the high frequency power of the first frequency to the electrode unit 214 or the remote plasma apparatus 100 is connected to the shared high frequency generator 300 as shown in the drawing. The power switching unit 10 is a pneumatically actuated power switching unit that causes electrical contact or releases contact with air pressure.

The matching unit 115 connected between the power switching unit 10 and the inductive coil 119 or the matching unit 320 connected between the power switching unit 10 and the cathode electrode unit 214 may be the maximum. Impedance matching is performed to ensure that power is delivered to the load.

For example, the matching unit 115 is an inductive coil which is a load from the input of the power supply side impedance Zo (normally 50Ω) and the matching unit 115 when the high frequency generator 300 is viewed through the transmission line L13. It acts to match the load-side impedance ZL when looking at the (119) side. When the impedance between the high frequency generator 300 and the load 119 is matched with each other, the maximum power is transmitted to the load to prevent power loss due to reflection.

The remote plasma apparatus 100 shown in FIG. 2 has a plasma reactor 117 on which an inductive coil 119 is wound and a spherical portion 121 is formed near the outlet 120 as a reactor for generating a cleaning gas. As a result, the remote plasma source is efficiently and efficiently generated. Therefore, since the high frequency power source (13.56 MHz) of the first frequency applied from the shared high frequency generator 300 can be shared in the cleaning process, the high frequency generator 112 as shown in FIG. 1 is removed. . NF ₃ When a gas is used, the internal diameter of the sphincter 121 formed of a ceramic material may have several millimeters.

An example of the prior art for generating a plasma source with high density through the plasma reactor 117 having the sphincter 121 is US Patent No. USP NO. 6,112,696, USP NO. 6,263,831, and USP NO. 7,015,415. In the above-mentioned prior arts, a technique for generating a high-density plasma source by inducing a high-efficiency plasma reaction in a discharge chamber, which is an inductive coupling reactor, has been proposed. 117 may be provided.

In FIG. 2, when the film forming process is started, as the vacuum valve 218 is opened and vacuum pumping is performed while the remote plasma apparatus 100 is not driven, the internal pressure of the process chamber 210 goes to a vacuum state. do. When the vacuum pressure of the process chamber 210 reaches a predetermined value (for example, selected from 0.3 to 50 Torr) by the automatic opening / closing operation of the vacuum valve 218, the process source gas for film formation is transferred to the inlet 211. It is introduced and supplied into the process chamber 210 through the shower head (212). At this time, the high frequency generator 300 is powered on by the control signal CS to generate a high frequency power of about 13.56 MHz frequency. In the deposition mode, the high frequency power source may be controlled to generate power of about 10 KW. Here, although the frequency of the high frequency power source generated by the high frequency generator 300 is almost set, the power intensity may be easily changed according to the process mode by the power selection signal.

The high frequency power generated by the high frequency generator 300 is applied to the switching stage S of the power switching unit 10 through the line L10. In the deposition mode, the power switching unit 10 connects the switch SW1 to the selection terminal a by the switching control signal SWCO applied. Therefore, the switched high frequency power is applied to the matching unit 320 through the line L14. The high frequency power is impedance-matched by the matching unit 320 and then applied to the cathode 214 through the line L20. When a high frequency power source having a power of about 10 KW and a frequency of about 13.56 MHz is applied to the cathode 214, a plasma is generated by a high frequency electric field formed between the showerhead 212 or the chamber upper wall and the cathode 214 serving as an anode. A discharge occurs to dissociate the process source gas. The film-forming ions in the dissociated process source gas are applied by chemical vapor deposition on a substrate (a wafer or a substrate of a liquid crystal display) that is electrostatically adsorbed or placed on top of the cathode 214 to form a desired film quality. . The cathode 214 functions as an electrostatic chuck on which a substrate to be processed is mounted, and electrically serves as a lower electrode facing an anode, which is an upper electrode, for plasma discharge. The upper electrode may be an earthed upper chamber wall, and the upper electrode may be grounded or another high frequency power may be applied.

When time elapses and a film thickness of a predetermined thickness is formed on the substrate, driving of the high frequency generator 300 is stopped and the film forming process is completed.

After the film forming process is completed, the chamber cleaning process is started. In the chamber cleaning process, the high frequency generator 300 is powered on by the control signal CS and still generates a high frequency power of about 13.56 MHz. In the cleaning mode, the high frequency power source may be controlled to generate power in the range of 2KW to 6KW, for example about 3KW. The high frequency power generated by the high frequency generator 300 is applied to the switching stage S of the power switching unit 10 through the line L10. In the cleaning mode, the power switching unit 10 connects the switch SW1 to the selection terminal b by the switching control signal SWCO applied. Accordingly, the switched high frequency power is applied to the matching unit 115 in the remote plasma apparatus 100 through the line L13. The high frequency power is impedance-matched by the matching unit 115 and then provided to the inductive coil 119 of the plasma reactor 117 having the recess 121. When a high frequency power source having a power of about 3 KW and a frequency of about 13.56 MHz is applied to the inductive coil 119, a condition in which an inductive plasma discharge occurs is satisfied and injected into the inlet 118 of the plasma reactor 117. Injected gases such as NF ₃ The gas is dissociated into plasma discharge by the high frequency power supply and decomposes into gas ions of N and F. Typically, when a plasma discharge occurs, the injection gas may decompose into ionic, electron, and radical states.

The decomposed gas ions become high density while passing through the sphincter 121 and are output to the outlet 120. The decomposed gas ions eventually become a remote plasma source for performing the cleaning process.

The remote plasma source supplied to the outlet 120 is exhausted along the exhaust direction AR1 through the interior of the process chamber 210, and the F ions are easily combined with particles generated in the film forming process and the internal cleaning object. Since it is discharged to the exhaust pipe, etching or cleaning is performed. After the chamber cleaning process is performed for a predetermined time, the high frequency generator 300 is powered off and the chamber cleaning process is completed.

As described with reference to FIG. 2, in the cleaning process, since the high frequency power of the first frequency of the high frequency generator 300 provided for the film forming process may be shared, a separate dedicated device may be used inside or outside the remote plasma apparatus 100. It can be seen that there is no need to provide a power supply.

In FIG. 2, the high frequency generator 300 has been described as being powered off when the mode is changed. However, this is only for convenience of explanation, and in other cases, the high frequency generator 300 is maintained in a power-on state and the power switching unit is used. Only the switching state of 10 may be changed.

3 is a block diagram of a chemical vapor deposition apparatus employing a remote plasma apparatus according to another embodiment of the present invention, in which the power switching unit 10 is located inside the remote plasma apparatus 102 in comparison with FIG. 2. Except that, it is comprised substantially the same.

According to the configuration of FIG. 3, it is easy to apply the new remote plasma apparatus 102 to the existing plasma processing apparatus.

In the film forming process, the switch SW1 of the power switching unit 10 is connected to the selection terminal a, and the high frequency power of the high frequency generator 300 is line L10-line L13-power switching unit 10- The line L14 is applied to the matching unit 320. In the deposition process, the high frequency generator 300 is powered on by the control signal CS to generate a high frequency power source having a power of about 13.56 MHz and a power of about 10 KW.

In the cleaning process, the switch SW1 of the power switching unit 10 is connected to the selection stage b, so that the high frequency power of the high frequency generator 300 is line L10-line L13-power switching unit 10. It is applied to the matching unit 115 via. In the cleaning process, the high frequency generator 300 is powered on by the control signal CS to generate a high frequency power source having a power of about 13.56 MHz and a power of about 3 KW.

Even in the configuration as illustrated in FIG. 3, since a high frequency power source of the first frequency of the high frequency generator 300 provided for the film forming process may be shared in the cleaning process, a separate dedicated power source may be used inside or outside the remote plasma apparatus 100. There is no need to have a device.

4 is an exemplary detailed configuration diagram of the remote plasma apparatus shown in FIG. 2 or 3.

Referring to FIG. 4, the matching of the sensor 130, which may be implemented as a directional coupler, the interface unit 140, the controller 150, which may be implemented as a microprocessor, and the matching unit 115 performs impedance matching. It is shown as a circuit device.

FIG. 5 is a circuit diagram illustrating an example of the matching unit of FIG. 4, in which an inductor L1 and a variable capacitor VR1 connected between one node ND1 of the inductor L1 and ground are shown as an equivalent circuit. As a result, the control output of the controller 150 of FIG. 4 allows the impedance of the power supply side and the load side impedance to be matched with each other by changing the capacitance of the variable capacitor VR1 which is a variable impedance element.

For example, assuming that the power supply side impedance Zo when looking at the high frequency generator 300 through the transmission line L13 of FIG. 3 is 50 Ω, the high frequency generator 300 has a transmission line having a characteristic impedance of 50 Ω. When it is connected to the input terminal of the matching unit 115 through, the control unit 150 for controlling the matching unit 115 is the load side impedance when looking toward the load 119 from the input terminal of the matching unit 115 ( The capacitance of the variable capacitor VR1 is adjusted so that ZL) is 50Ω. When the impedance between the high frequency generator 300 and the load 119 is matched with each other, the maximum power is transmitted to the load to prevent power loss due to reflection.

FIG. 6 is a block diagram illustrating an implementation of the high frequency generator of FIG. 2 or 3.

Referring to FIG. 6, it is shown that a DC power source is generated from the DC power source unit 51. The amplifier 52 amplifies the oscillation signal Vin output from the oscillator 59 by using the DC power supplied from the DC power supply 51, and outputs an output frequency of a radio frequency band (RF band: Example 13.56 MHz). Outputs a high frequency power source having a. The high frequency power amplified by the amplification unit 52 is supplied to the load through the filter unit 53 for removing high harmonic waves and the directional coupling unit 54 in order. Here, the load becomes the cathode 214 of the process chamber 210 in the film forming process, and the inductive coil 119 in the remote plasma apparatus 100 in the cleaning process.

On the other hand, the directional coupler 54 detects the traveling wave voltage of the high frequency power supply and provides it to the traveling wave power calculator 55. Therefore, the traveling wave power calculator 55 calculates the traveling wave power value Pf of the high frequency power supply from the traveling wave voltage. The output power controller 58 compares the set output power set value Pset with the traveling wave power value Pf to control the output level of the oscillation signal Vin of the oscillator 59. That is, the output power controller 58 controls the output level of the oscillation signal Vin of the oscillator 59. As a result, the load-side power value obtained by subtracting the reflected wave power value Pr from the traveling wave power value Pf is controlled to be a constant value by the output power controller 58.

The high frequency generator described with reference to FIG. 6 is only an example of implementation, and when the frequency is set to the same, for example, when 3KW is given by the setting value of the power value, the output power of 3KW is controlled to be stable, and 10KW is obtained.

As described above, since a high frequency generator for applying high frequency power to the load of the process chamber can be commonly used for a remote plasma apparatus for generating a remote plasma source for chamber cleaning, a separate high frequency generator used independently for the remote plasma apparatus The need to have is eliminated. Therefore, the size of the remote plasma apparatus can be made compact, and the apparatus implementation cost can be reduced.

In the above description, the embodiments of the present invention have been described with reference to the drawings, for example. However, it will be apparent to those skilled in the art that the present invention may be variously modified or changed within the scope of the technical idea of the present invention. . For example, in other cases, the detailed structure or frequency of use of the remote plasma apparatus may be variously changed or changed without departing from the technical spirit of the present invention. In addition, the switching, generation, and control schemes of the high frequency power supply may be changed in various ways according to specific matters.

1 is a block diagram of a chemical vapor deposition apparatus employing a general remote plasma apparatus

Figure 2 is a block diagram of a chemical vapor deposition equipment employing a remote plasma apparatus according to an embodiment of the present invention

3 is a block diagram of a chemical vapor deposition apparatus employing a remote plasma apparatus according to another embodiment of the present invention

4 is a detailed configuration example of the remote plasma apparatus shown in FIG. 2 or FIG.

FIG. 5 is a circuit diagram illustrating an example of the matching unit of FIG. 4. FIG.

6 is a block diagram showing an implementation example of the high frequency generator of FIG.

Claims (13)

A process chamber having an electrode portion necessary for causing plasma discharge for the film forming process inside the chamber; A remote plasma apparatus for generating a remote plasma source for performing a cleaning process and providing the remote plasma source to the process chamber; In the film forming process, a high frequency power of a first frequency is applied to the electrode portion of the process chamber, and in the cleaning process, a shared high frequency generator is provided to apply the high frequency power of the first frequency to the remote plasma apparatus. Device. The remote plasma source of claim 1, wherein the remote plasma apparatus receives the high frequency power source of the first frequency applied from the shared high frequency generator in the cleaning process by using an inductive coil of a plasma reactor having a proximal portion. Plasma processing apparatus, characterized in that for generating. The apparatus of claim 1, wherein the first frequency is in a range of about 400 KHz to about 14 MHz. The plasma processing apparatus of claim 1, wherein the shared high frequency generator is connected to a power switching unit for switching a high frequency power source having a first frequency to the electrode unit or the remote plasma apparatus. A process chamber supporting an object to be processed and having an electrode portion inside the chamber necessary for causing plasma discharge for film formation; A shared high frequency generator generating a first high frequency power source of a first frequency in a first operating mode and a second high frequency power source of a first frequency in a second operating mode; Switching the power generated in the shared high frequency generator so that the first high frequency power of the first frequency is applied to the electrode portion of the process chamber in the first operation mode, the first frequency of the first frequency in the second operation mode And a remote plasma apparatus for generating a cleaning plasma source using a second high frequency power source and providing the generated source to the process chamber. 6. The plasma apparatus of claim 5, wherein the remote plasma apparatus generates the cleaning plasma source by receiving the second high frequency power source of the first frequency with an inductive coil of a plasma reactor having a shortened portion. Processing unit. 7. The plasma processing apparatus of claim 6, wherein the first frequency is about 13.56 MHz and the second high frequency power is lower than the first high frequency power. 6. The plasma processing apparatus of claim 5, wherein the remote plasma apparatus has a pneumatically operated power switching unit for switching the power source. 6. The plasma processing apparatus of claim 5, wherein the first operation mode is a chemical vapor deposition process and the second operation mode is a process chamber cleaning process. A process chamber supporting the object to be treated and having a cathode as one electrode necessary for causing plasma discharge; A high frequency generator for applying a high frequency power source having a first frequency to the cathode during a film forming process for forming a chemical vapor deposition film on the object to be treated; Plasma cleaning gas which is operatively connected to the high frequency generator in a cleaning process performed before and after the film forming process, receives the high frequency power of the first frequency into an inductive coil of a reactor having a shortened portion, and is decomposed by the high frequency power. And a remote plasma apparatus for generating a remote plasma source containing fluoride ions as a chemical vapor deposition apparatus. In the plasma processing apparatus having a process chamber provided with an electrostatic chuck inside the chamber and a high frequency generator for applying a high frequency power of a first frequency to the electrostatic chuck during the film forming process, a remote plasma source for performing the cleaning process is provided. In a remote plasma apparatus applied to: A switching unit for switching to use a high frequency power source of the first frequency of the high frequency generator even in a cleaning process performed after the film forming process so as to exclude a separate dedicated high frequency generator; An inductive coil configured to receive the high frequency power of the first frequency applied through the switching unit in the cleaning process; And a plasma plasma reactor, the plasma reactor being surrounded by the inductive coil and having an outlet portion to generate a remote plasma source for performing the cleaning process with the high frequency power of the first frequency. Device. 12. The remote plasma apparatus of claim 11, wherein the high frequency power source of the first frequency is a power in the range of 2KW to 6KW having a frequency of several tens of megahertz band. 12. The remote plasma apparatus of claim 11, further comprising a matching circuit device that performs impedance matching between the switching unit and the inductive coil so that maximum power is transferred to the load.

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