KR102089606B1 - Plasma surface tretement apparatus for plasma processing of semiconductor manufacture - Google Patents

Abstract

The present invention relates to a plasma surface treatment device for plasma process to manufacture a semiconductor. The plasma surface treatment device of components for semiconductor manufacturing equipment comprises: an ICP source type plasma source unit; a heater unit; an RF filter unit; and a heater diagnosis unit. According to the present invention, surface treatment efficiency and process efficiency may be increased.

Description

Plasma surface treatment device for plasma processing for semiconductor manufacturing {PLASMA SURFACE TRETEMENT APPARATUS FOR PLASMA PROCESSING OF SEMICONDUCTOR MANUFACTURE}

The present invention relates to a plasma surface treatment apparatus for a plasma process for semiconductor manufacturing, and more specifically, to control or increase the plasma density formed in the process chamber, so that the surface of the target material during the plasma process such as coating or etching The present invention relates to a plasma surface treatment device for a plasma process for semiconductor manufacturing that enables to increase processing efficiency and process efficiency and enables high-quality product production.

In general, semiconductor manufacturing equipment, when a wafer is arranged for semiconductor manufacturing in a state where a heater and a shower head are configured in a reaction chamber, the reaction gas is introduced into the reaction chamber through a pipe, but supplied to a wafer through a shower head, At the same time, the heater is supplied with heating energy at a constant temperature, through which the semiconductor is manufactured.

As described above, most of the process chambers are used to deposit thin films for semiconductors, and since RF or corrosive gases are used in the process chambers to improve the properties and productivity of the thin film process, electricity is used as the material of the process chamber and the components of the process chamber. It has the advantage of using a lot of aluminum (Al) material, which has good conductivity and good corrosion resistance, and has the advantage of being lightweight and reducing weight.

However, components for semiconductor manufacturing equipment using aluminum (Al) material have poor corrosion resistance due to various factors such as pin holes or burs generated during processing, or reaction by-products are easily attached, resulting in process characteristics. A changing problem occurs, and impurity particles are generated.

Thus, in order to improve this problem, a method of coating a process chamber and parts in the process chamber using an anodizing method has been used in the past, but in a thin film deposition environment using high temperature, the aluminum material and surface There was a problem in that the anodizing coating film peeled off the surface after a certain period of time due to a difference in the thermal expansion coefficient generated between the anodizing coating films to be coated, and this caused problems such as more impurities and a wrong process. have.

However, in the case of the fusion coating process including anodizing which is generally used in the past, due to the difference in the coefficient of thermal expansion with the metal base material, film separation occurs over time and causes a secondary problem, so other alternatives are required. have.

For this reason, a method of surface treatment is frequently used through a dry process using plasma in the semiconductor manufacturing process. In the semiconductor manufacturing process, the plasma density formed in the process chamber during plasma processing has a great influence on process efficiency and manufacturing quality. As a very important factor to be exerted, it is difficult to produce high-quality products due to problems such as difficulty in upward control of electron temperature and a decrease in ionization rate when plasma density is reduced.

However, in the related art, there is a problem in that it is not easy to control or increase the density of plasma when the plasma process is performed.

Republic of Korea Registered Patent Publication No. 10-1324763 Republic of Korea Patent Publication No. 10-2012-0121655 Republic of Korea Registered Patent Publication No. 10-1515378

The present invention is to solve the above-mentioned conventional problems and to be devised in consideration of the above, it is possible to adjust or increase the plasma density formed in the process chamber, so that the surface treatment efficiency and process during the plasma process such as coating or etching of the base material side as the target object It is an object of the present invention to provide a plasma surface treatment device for a plasma process for semiconductor manufacturing to increase efficiency and to enable production of high-quality products.

An object of the present invention is to provide a plasma surface treatment apparatus for a plasma process for semiconductor manufacturing to increase an electron temperature and increase an ionization rate through the use of a remote plasma source.

The present invention improves the process efficiency according to plasma treatment, such as improving the plasma atmosphere by measuring and diagnosing the state of the plasma formed in the process chamber, and plasma surface treatment for plasma processing for semiconductor manufacturing to enable reliable diagnosis. The purpose is to provide a device.

The present invention provides a plasma surface treatment device for a plasma process for semiconductor manufacturing to increase reliability according to the diagnosis of an abnormality on the heater side by removing noise from an RF signal to monitor and diagnose the abnormality on the heater side. The purpose is to provide.

A plasma surface treatment apparatus for a plasma process for manufacturing a semiconductor according to the present invention for achieving the above object includes: an ICP source plasma source unit for inducing plasma generation in a process chamber but increasing plasma density; A heater unit which is connected to a susceptor located in the lower portion of the process chamber to supply heating energy, and is a core element that determines the resolution of the gas flowing into the process chamber through temperature control; An RF filter unit that detects that the RF signal is introduced into the heating coil and the ground wire on the heater unit side when RF power is applied to the plasma source unit; A power supply unit that applies a driving voltage to the heater unit through the RF filter unit; In the plasma surface treatment apparatus of a component for semiconductor manufacturing equipment, including; a heater diagnosis unit for processing the RF signal transmitted from the RF filter unit to diagnose whether the heater unit is abnormal, wherein the plasma source unit is located at an upper portion of the process chamber. A chamber antenna mounted and provided; A first RF power supply unit supplying RF power for generating plasma to the chamber antenna; A first RF matching unit to generate stable plasma through impedance matching with respect to RF power supplied from the first RF power unit; A remote source chamber which is connected to an assembly connection and a communication structure through a gap maintaining portion at one side of the process chamber and is provided to supply gas to the inside; A tubular coil antenna wound on the outer surface of the remote source chamber; A second RF power unit supplying RF power for generating plasma to the tubular coil antenna; A second RF matching unit that generates stable plasma through impedance matching with respect to RF power supplied from the second RF power unit; A first RF power measurement unit installed on the first RF power unit and the first RF matching unit to check RF reflected power; A second RF power measurement unit installed on the second RF power unit and the second RF matching unit to check RF reflected power; Impedance matching is maintained by adjusting the first RF matching unit and the second RF matching unit to fall within an automatic matching range in response to RF reflected power through the first RF power measuring unit and the second RF power measuring unit. And a variable capacitor. The differentiated RF power is applied to the first RF power unit and the second RF power unit, but a larger RF power is applied from the first RF power unit than the second RF power unit.

Here, the plasma diagnosis unit for measuring and diagnosing the state of the plasma formed in the process chamber by the plasma source unit; including, the plasma diagnosis unit, tungsten, molybdenum on the plasma region formed in the process chamber , Plasma diagnostic probe is installed so that the probe consisting of one selected from platinum is located; A voltage applying unit that applies a voltage to the plasma diagnosis probe; It includes; a plasma diagnostic unit for deriving a plasma parameter by measuring the current flowing through the plasma diagnostic probe with respect to the voltage applied through the voltage applying unit; the plasma diagnostic unit to minimize the distortion to derive a reliable plasma parameter By using the AC superposition method, it is possible to process to derive a plasma parameter by obtaining a second derivative.

Here, in the plasma diagnosis unit, the probe current measured when the voltage is applied from the voltage application unit is developed in a Taylor-deployed expression according to Equation 1 below, and then the signal-to-noise ratio is arranged by frequency using a cosine distribution formula. It can be processed to derive plasma parameters in the form of a reduced second derivative.

(Equation 1)

I (V + v ₀ cosωt) = I (V) + v ₀ cosωtI '(V) + 1/2! Cos2ωtI "(V) +… (v ₀ <1)

_{I (V + v 0 cosωt)} = [I (V) + {v 0 2/4} I "(V) + ...] + [v 0 I '(V) + {v 0 3/8} I"' (V) +… ^{_{] cosωt + [{v 0 2}} /4} I "(V) + {v 0 4/48} I""(V) + ...] cos2ωt + ...

f (x) ∝ I _2ω = 1/4 {v ₀ ² I "(V)} cos2ωt

Here, the plasma diagnosis probe is connected to a choke filter to remove perturbation interference caused by RF power frequency in response to application of RF power to the plasma source unit to measure a voltage-current state that is not distorted. The choke filter is configured to compensate, and the first choke filter unit connected to the inside of the plasma diagnostic probe unit to remove perturbation interference with respect to the RF power frequency of the RF applied power of the first RF power unit unit, and the outside of the plasma diagnostic probe unit It can be configured as a second choke filter unit disposed in and connected to the first choke filter unit to remove perturbation interference with respect to the RF power frequency of the RF applied power of the second RF power unit.

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According to the present invention, it is possible to control or increase the plasma density formed in the process chamber, thereby improving the surface treatment efficiency and process efficiency during the plasma process such as coating or etching of the base material as an object, and capable of coating the film with increased density. In addition, it is possible to achieve useful effects that enable high-quality surface treatment and product production, such as making it possible to minimize the generation of impurities by separating membranes.

According to the present invention, it is possible to increase the electron temperature and increase the ionization rate in the plasma process through the use of a remote plasma source, thereby increasing the process efficiency, and useful effects that can be used for cleaning the chamber during and after the process chamber side. Can be achieved.

According to the present invention, it is possible to measure and diagnose the state of the plasma formed in the process chamber, thereby improving the process efficiency according to plasma treatment, such as improving the plasma atmosphere, and performing reliable diagnosis of the plasma state. Usefulness can be achieved.

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1 is a conceptual diagram showing a plasma surface treatment apparatus for a plasma process for semiconductor manufacturing according to an embodiment of the present invention.
2 is a block diagram showing a plasma surface treatment apparatus for a plasma process for manufacturing a semiconductor according to an embodiment of the present invention.
3 is a block diagram showing a plasma source unit in a plasma surface treatment apparatus for a plasma process for semiconductor manufacturing according to an embodiment of the present invention.
4 is a view showing the configuration of a plasma probe in a plasma surface treatment apparatus for a plasma process for semiconductor manufacturing according to an embodiment of the present invention.
5 is a block diagram showing a heater unit and a heater morning monitoring unit in a plasma surface treatment apparatus for a plasma process for semiconductor manufacturing according to an embodiment of the present invention.
6 is a block diagram showing a heater monitoring unit in a plasma surface treatment apparatus for a plasma process for semiconductor manufacturing according to an embodiment of the present invention.
7 is a block diagram showing a heater diagnosis unit in a plasma surface treatment apparatus for a plasma process for semiconductor manufacturing according to an embodiment of the present invention.

When describing a preferred embodiment with reference to the accompanying drawings for the present invention is as follows, through this detailed description will be able to better understand the object and configuration of the present invention and features accordingly.

Plasma surface treatment apparatus for a plasma process for semiconductor manufacturing according to an embodiment of the present invention, as shown in Figures 1 to 7, including a process chamber 100, a heater unit 200, a plasma source unit 300 It consists of a composition.

In addition, at least one of the plasma diagnostic unit 400 and the heater monitoring unit 500 may be further included.

The process chamber 100 is made of various metal materials, including materials such as aluminum or aluminum alloy, and is a component that provides a space for performing a process such as coating or etching using plasma.

The process chamber 100 may be formed of a chamber having various shapes, including a cylindrical shape or a box shape.

The process chamber 100 is provided with an inlet and an outlet so that gas can be introduced and discharged for plasma generation.

The process chamber 100 is provided to generate and maintain a vacuum through a rotary pump and a turbo molecular pump, and the pressure is provided to be adjusted through a throttle valve.

The heater unit 200 is provided to be located inside the lower portion of the process chamber 100, and may be connected to and installed on a susceptor in which a target material as a target object is seated.

The heater unit 200 is composed of a main body 210 and a heating coil 220.

The heater unit 200 is driven to maintain a constant process temperature in the process chamber 100 while the process is in progress, and the heating material 220 is inserted into the susceptor side inside the subject material to be processed. It may be provided in the form.

The heater unit 200 is located at the bottom of the process chamber 100 and is provided to supply heating energy, and is configured to function as a key element that determines the resolution of the gas flowing into the process chamber 100 through temperature control. to be.

The heater unit 200 is provided to be connected to the power supply unit 230 and supplied with a prescribed voltage therefrom.

The plasma source unit 300 is for inducing plasma generation in the process chamber 100, and includes a configuration for adjusting or increasing the plasma density in the process chamber 100.

To this end, the plasma source unit 300 is mounted on the upper portion of the process chamber 100 is provided with a coiled chamber antenna 311, and the chamber antenna 311 for supplying RF power for plasma generation 1RF power unit 312, the first RF matching unit 313 to generate a stable plasma through impedance matching with respect to the RF power supplied from the first RF power unit 312, and one of the process chamber 100 The remote source chamber 320 which is located at the side and is connected to the assembly connection and communication structure through the gap maintaining unit 301 and is provided to supply gas to the process chamber 100 via its interior, and the remote source chamber ( A coil antenna 331 having a tubular structure wound on the outer surface of 320), a second RF power unit 332 for supplying RF power for generating plasma to the tubular coil antenna 331, and the second RF power unit Impedance to RF power supplied from 332 A second RF matching unit 333 for generating a stable plasma through matching, and a first RF power measuring unit installed on the first RF power unit 312 and the first RF matching unit 313 to check RF reflected power (340), the second RF power unit 332 and the second RF matching unit 333 installed on the second RF power measuring unit 350 for checking the RF reflected power, and the first RF matching unit 313 And the second RF matching unit 333 installed on the grounding side, respectively, in response to RF reflected power through the first RF power measuring unit 340 and the second RF power measuring unit 350 to adjust the impedance to be within an automatic matching range. It is possible to have a configuration including a variable capacitor (361) (362) to maintain a matched state.

Here, each variable capacitor 360 is provided to be automatically adjusted by a control unit, and the control unit is provided to be connected to a signal input from the first RF power measurement unit 340 and the second RF power measurement unit 350.

At this time, the chamber antenna 311 and the coil antenna 331 may be a coil made of copper, and sometimes ferrite.

The remote source chamber 320 may be provided in a variety of bodies, including cylindrical or box-shaped, and is provided with a gas inlet and a gas supply port, the gas supply port is assembled to the inlet of the process chamber 100 to connect and communicate structure Is installed as

The gas introduced through the gas inlet of the remote source chamber 320 may be any gas useful for plasma generation including nitrogen and argon, and the flow rate of the gas is provided to be controlled by a flow controller (MFC).

 The first RF power unit 312 and the second RF power unit 332 apply differentiated RF power, but greater RF power is applied than the second RF power unit 332 at the first RF power unit 312 side. do.

As an example, the first RF power unit 312 may be applied as an RF power source having an RF power frequency of 150W to 1200W and 13.56MHz, and the second RF power unit 332 may be 100W to 500W and 2 to 10MHz. It can be applied as an RF power source having an RF power frequency of, and the RF power source can be modified or changed according to the plasma process requirements.

The chamber antenna 311 may be provided to be cooled through blowing by a blower, and the coil antenna 331 may be provided to be cooled by water cooling through circulation of cooling fluid such as cooling water or refrigerant.

That is, the plasma source unit 300 having the above-described configuration connects the remote source chamber 320 to one side of the process chamber 100 that provides a main space for the plasma process, and further sources a source for plasma generation. By having an additional configuration, it is possible to provide an advantage of increasing the plasma density in both the high energy region and the low energy region of the process chamber 100, and in particular, it provides an advantage that can be used by adjusting the plasma density according to the plasma process requirements can do.

Incidentally, the plasma source unit 300 can obtain an effect of adding an electric field through the provision of a remote source chamber 320 and a coil antenna 331, thereby increasing resistance heating, and through this, Since it is possible to induce an increase, it is possible to reduce the ionization collision energy per atom, and thus it is possible to increase the ionization rate, and to increase the surface treatment efficiency as well as the process efficiency during the plasma process such as coating or etching on the base material side. In addition, it is possible to provide an advantage of enabling high-quality product production, such as enabling a high-density film coating process and minimizing the generation of impurities by separating the film.

In addition, by using a remote plasma source, it can be used to perform chamber cleaning between before and after processes of the process chamber 100.

In addition, the plasma source unit 300 is configured to include a first RF power measurement unit 340, a second RF power measurement unit 350 and a variable capacitor 360 to maintain a constant impedance matching state during the process. Controllable can provide the advantage of enabling stable process progress and superior quality.

In addition, in the present invention, installed inside the process chamber 100, the light emission sensor (OES) for measuring the relative amount of chemical species and chemical species generated by the plasma reaction, and the inside of the process chamber 100 It can be installed to have a configuration including an optical plasma sensor (OPM) for detecting the total amount of light in the plasma and measuring the change in the state of the plasma through it.

By utilizing the measurement data of the light emission sensor and the optical plasma sensor, it is possible to perform the operation of adjusting or increasing the plasma density in the process chamber 100 through control such as adjusting the RF power source.

The light emission sensor and the optical plasma sensor may be provided on the plasma diagnosis unit 400 side, rather than the plasma source unit 300 side, to be used to diagnose and control the state of the plasma in the process chamber 100.

Meanwhile, the plasma diagnosis unit 400 is an additional configuration for measuring and diagnosing the state of plasma formed in the process chamber 100 by the plasma source unit 300, and is formed in the process chamber 100 The plasma diagnostic probe 410 is installed to be located on the plasma region, and the voltage is applied through the voltage applying unit 420 and the voltage applying unit 420 to apply a voltage to the plasma diagnostic probe 410. By measuring the current flowing through the plasma diagnosis probe 410 with respect to the voltage to be obtained, it is possible to have a configuration including the plasma diagnosis unit 430 to derive plasma parameters.

The plasma diagnostic probe 410 may be made of one selected from tungsten, molybdenum, and platinum, and one or more may be used.

The plasma diagnosis probe 410 is disposed to be located on an area where plasma is formed in the process chamber 100.

The plasma diagnosis probe unit 410 has a choke filter 440 to remove perturbation interference due to RF power frequency according to the application of RF power to the plasma source unit 300 so as to measure a undistorted voltage-current state. ) To compensate for distortion.

At this time, the choke filter 440 is connected to the inside of the plasma probe 410 having a probe-type configuration to remove the perturbation interference with respect to the RF power frequency of the RF applied power of the first RF power unit 312. RF having the RF applied power of the second RF power unit 332 by being disposed outside the choke filter unit 441 and the plasma probe unit 410 having a probe type and connected to the rear side of the first choke filter unit 441 The second choke filter unit 442 may be configured to remove perturbation interference on the power frequency.

Here, when the choke filter 440 is applied with RF power from the first RF power unit 312 and the second RF power unit 332 side, perturbation may occur with harmonic components and sideband components for the RF power frequency. It is applied to the sheath, and it can provide an advantage of compensating for perturbation distortion by removing interference caused by the harmonic component and the sideband component of the RF power frequency.

The plasma diagnosis unit 430 may be configured by a computer means such as a PC or a laptop, and a plasma diagnosis engine for diagnosing plasma characteristics using a voltage-current curve will be mounted.

The plasma diagnosis unit 430 may process to derive plasma parameters by obtaining a second-order derivative using an AC superimposition method to derive reliable plasma parameters by minimizing distortion.

That is, in the plasma diagnosis unit 430, the probe current measured when the voltage is applied from the voltage application unit 420 is developed into a Taylor-deployed expression according to Equation 1 below, and then, by frequency using a cosine distribution formula. By arranging, it is possible to process to derive plasma parameters in the form of a second-order derivative with reduced signal-to-noise ratio.

(Equation 1)

I (V + v ₀ cosωt) = I (V) + v ₀ cosωtI '(V) + 1/2! Cos2ωtI "(V) +… (v ₀ <1)

_{I (V + v 0 cosωt)} = [I (V) + {v 0 2/4} I "(V) + ...] + [v 0 I '(V) + {v 0 3/8} I"' (V) +… ^{_{] cosωt + [{v 0 2}} /4} I "(V) + {v 0 4/48} I""(V) + ...] cos2ωt + ...

f (x) ∝ I _2ω = 1/4 {v ₀ ² I "(V)} cos2ωt

Where ω is the frequency

Here, when the plasma diagnosis process through the plasma diagnosis unit 430 is schematically examined, a sheath is generated between the plasma diagnosis probe 410 and the plasma formed in the process chamber 100 when the plasma process is performed. While increasing the voltage applied through 420, the sheath voltage can be changed, and the current can be measured. Through this, a current-voltage characteristic curve can be obtained, and plasma parameters can be derived therefrom.

In the plasma diagnosis using the conventional probe, the electron-energy probability function can be obtained through the differential of the current-voltage characteristic curve twice. The electron energy probability function is severely distorted and it is difficult to obtain reliable plasma parameters.

Accordingly, in the present invention, the voltage-current characteristic curve is doubled when the frequency of Taylor is developed by using Taylor to obtain a second-order derivative using the above-described AC superposition method, and then arranged by frequency using a cosine distribution formula. Since it contains a differential component, it is possible to obtain a second derivative that reduces the signal-to-noise ratio, and thereby, it is possible to derive a reliable plasma parameter.

That is, since the frequency component having noise can have a form including only the second harmonic frequency component of the modulation voltage, it can be obtained in a form that can reduce the signal-to-noise ratio.

Meanwhile, when the RF power is applied to the plasma source unit 300, the heater monitoring unit 500 includes an RF filter unit for detecting that the RF signal is introduced into the heating coil 220 and the ground wiring of the heater unit 200 ( 510) and a heater diagnosis unit 520 for processing the RF signal transmitted from the RF filter unit 510 to diagnose whether the heater unit 200 is abnormal.

In this case, the power supply unit 230 on the heater unit 200 side is provided to apply a driving voltage to the heating coil 220 on the heater unit 200 through the RF filter unit 510.

The RF filter unit 510 includes a noise removing unit 511 disposed between the heating coil and a power supply unit to remove noise included in the RF signal when RF power is applied to the plasma source unit 300, and the noise removing unit ( It includes a band pass filter 512 to pass through the band signal is removed from the RF signal flowing into the heater and the ground wiring through 511) to transmit to the heater diagnosis unit 520.

Here, the noise removing unit 511 is a noise detection unit 511a for detecting noise, a noise amplification processing unit 511b for amplifying and processing noise detected by the noise detection unit, and amplification processing through the noise amplification processing unit It can be configured as a noise filter unit 511c to filter the noise.

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The heater diagnosis unit 520 determines whether the heater unit 200 is abnormal based on the RF signals passing through the band pass filter 512 of the RF filter unit 510, and the RF signal based on the determination result. The stable voltage from which they are removed is connected to the RF filter unit 510 so as to be supplied from the power supply unit 230.

7, the heater diagnosis unit 520 may be configured as a module that performs signal processing, and may be hardware or software.

In the heater diagnosis unit 520, a signal processing unit 521 in the form of a comparator for comparing the RF signal passing through the noise removing unit 511 and the band pass filter 512 on the RF filter unit 510 with a normal signal, A determination unit 522 that receives a signal from the signal processing unit 521 and determines whether the heater unit 200 is abnormal, and an abnormality has occurred in the heater unit 200 according to the determination result of the determination unit 522. In this case, it may be configured as an alarm unit 523 for notifying the outside by audible or visual means.

The embodiments described above are merely for explaining preferred embodiments of the present invention and are not limited to these embodiments, and various modifications and variations by those skilled in the art within the technical spirit and claims of the present invention. Or it will be said that the substitution of the steps can be made, which will fall within the technical scope of the present invention.

100: process chamber 200: heater unit
300: plasma source unit 400: plasma diagnostic unit
500: heater monitoring unit

Claims (5)

An ICP source type plasma source unit for inducing plasma generation in the process chamber but increasing plasma density; A heater unit installed in the lower portion of the process chamber to supply heating energy, and a heater element that is a key element influencing the resolution of the gas flowing into the process chamber through temperature control; An RF filter unit that detects that the RF signal is introduced into the heating coil and the ground wire on the heater unit side when RF power is applied to the plasma source unit; A power supply unit that applies a driving voltage to the heater unit through the RF filter unit; A heater diagnosis unit that processes the RF signal transmitted from the RF filter unit to diagnose whether the heater unit is abnormal; In the plasma surface treatment apparatus for a plasma process for semiconductor production comprising a,
The plasma source unit includes a chamber antenna mounted on the upper portion of the process chamber; A first RF power supply unit supplying RF power for generating plasma to the chamber antenna; A first RF matching unit to generate stable plasma through impedance matching with respect to RF power supplied from the first RF power unit; A remote source chamber which is connected to an assembly connection and a communication structure through a gap maintaining portion at one side of the process chamber and is provided to supply gas to the inside; A tubular coil antenna wound on the outer surface of the remote source chamber; A second RF power unit supplying RF power for generating plasma to the tubular coil antenna; A second RF matching unit that generates stable plasma through impedance matching with respect to RF power supplied from the second RF power unit; A first RF power measurement unit installed on the first RF power unit and the first RF matching unit to check RF reflected power; A second RF power measurement unit installed on the second RF power unit and the second RF matching unit to check RF reflected power; Impedance matching is maintained by adjusting the first RF matching unit and the second RF matching unit to fall within an automatic matching range in response to RF reflected power through the first RF power measuring unit and the second RF power measuring unit. Variable capacitors; Including, the first RF power unit and the second RF power unit is applied to the differentiated RF power, the first RF power unit side to apply a larger RF power than the second RF power unit,
Plasma diagnosis unit for measuring and diagnosing the state of the plasma formed in the process chamber by the plasma source unit; including, wherein the plasma diagnosis unit, tungsten, molybdenum, platinum in the plasma region formed in the process chamber Plasma diagnostic probe is installed so that the probe portion consisting of the selected one is located; A voltage applying unit that applies a voltage to the plasma diagnosis probe; A plasma diagnosis unit for deriving plasma parameters by measuring a current flowing through the plasma diagnosis probe unit with respect to the voltage applied through the voltage application unit; In the plasma diagnosis unit, the plasma variable is derived by obtaining a second derivative using an AC superposition method to derive a reliable plasma variable by minimizing distortion.
The plasma diagnostic probe is configured to compensate for distortion by connecting a choke filter to remove perturbation interference caused by RF power frequency due to application of RF power to the plasma source unit to measure an undistorted voltage-current condition. However, the choke filter is disposed inside the plasma diagnostic probe and the first choke filter unit connected to the inside of the plasma diagnostic probe to remove perturbation interference to the RF power frequency of the RF applied power of the first RF power unit, and Plasma surface treatment for plasma processing for semiconductor manufacturing, characterized in that it consists of a second choke filter unit connected to the first choke filter unit to remove perturbation interference with respect to the RF power frequency of the RF applied power of the second RF power unit. Device. delete According to claim 1,
In the plasma diagnosis unit, the probe current measured when the voltage is applied from the voltage application unit is developed in a Taylor-deployed expression according to Equation 1 below, and then the signal-to-noise ratio is reduced by arranging by frequency using a cosine distribution formula. Plasma surface treatment apparatus for plasma processing for semiconductor manufacturing, characterized in that the plasma parameters are derived in the form of a derivative function.
(Equation 1)
I (V + v ₀ cosωt) = I (V) + v ₀ cosωtI '(V) + 1/2! Cos2ωtI "(V) +… (v ₀ <1)
_{I (V + v 0 cosωt)} = [I (V) + {v 0 2/4} I "(V) + ...] + [v 0 I '(V) + {v 0 3/8} I"' (V) +… ^{_{] cosωt + [{v 0 2}} /4} I "(V) + {v 0 4/48} I""(V) + ...] cos2ωt + ...
f (x) ∝ I _2ω = 1/4 {v ₀ ² I "(V)} cos2ωt delete delete

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