CN108668423A - Plasma processing device and pre-cleaning processes - Google Patents
Plasma processing device and pre-cleaning processes Download PDFInfo
- Publication number
- CN108668423A CN108668423A CN201710207264.8A CN201710207264A CN108668423A CN 108668423 A CN108668423 A CN 108668423A CN 201710207264 A CN201710207264 A CN 201710207264A CN 108668423 A CN108668423 A CN 108668423A
- Authority
- CN
- China
- Prior art keywords
- radio frequency
- reaction chamber
- ignition
- frequency source
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 86
- 230000008569 process Effects 0.000 title claims abstract description 86
- 238000004140 cleaning Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000007246 mechanism Effects 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 25
- 238000009616 inductively coupled plasma Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A kind of plasma processing device of present invention offer and pre-cleaning processes comprising reaction chamber, upper radio frequency source, lower radio frequency source, inlet duct and igniter, wherein the pedestal for carrying substrates is provided in reaction chamber；Inlet duct is for conveying process gas into reaction chamber；Igniter is used to introduce the seed electrons made needed for process gas electric discharge to the inside of reaction chamber.Plasma processing device provided by the invention can improve process uniformity and technology stability, reduce substrate damage, improve process efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to plasma processing equipment and a precleaning process.
Background
In a semiconductor manufacturing process, an Inductively Coupled Plasma (ICP) generator can obtain high-density plasma at a low working pressure, and because the ICP generator has the advantages of simple structure, low cost, and independent control of a radio frequency source for generating the plasma and a radio frequency source of a substrate bearing table, the ICP generator is widely applied to processes of plasma etching, physical vapor deposition, plasma chemical vapor deposition, a micro-electro-mechanical system, a light emitting diode and the like.
Fig. 1 is a structural diagram of a conventional ICP apparatus. As shown in fig. 1, the ICP apparatus includes a chamber 1, an insulating cylinder 4 disposed at the top of the chamber 1, and an intake cover plate 5 disposed at the top of the insulating cylinder 4. The radio frequency coil 3 is arranged around the outside of the insulating cylinder 4 and is connected with an upper radio frequency power supply 9 through an upper matcher 8. A susceptor 10 is disposed in the chamber 1 for supporting a substrate, and the susceptor 10 is connected to a lower rf power supply 12 through a lower adapter 11. An intake port 6 is provided in the intake cover 5, and an exhaust port 7 is provided at the bottom of the chamber 1. In addition, a shielding case 2 is covered around the radio frequency coil 3 and the air inlet cover plate 5, and the shielding case 2 is grounded to shield radio frequency.
As shown in fig. 2, the process of performing the precleaning process using the ICP apparatus includes first introducing a process gas (e.g., argon) with a large flow rate into the chamber through the gas inlet 6, and adjusting the exhaust amount of the exhaust port 7 to maintain the pressure in the chamber at 10mT or more; then, the upper rf power supply 9 is turned on, which feeds rf energy into the rf coil 3 through the upper matcher 8, the rf energy penetrates the insulating cylinder 4 in the form of electromagnetic waves, enters the chamber, and excites argon gas, thereby generating plasma. Subsequently, the lower RF power supply 12 is turned on, which feeds RF energy into the susceptor 10 in the chamber through the lower matcher 11 to attract ions in the plasma to move downward, bombarding the surface of the substrate. At which point the priming step is complete. And then, reducing the flow of the process gas, adjusting the exhaust amount of the exhaust port 7 to reduce the pressure in the cavity to be below 1mT (generally 0.5-0.8 mT), starting the process until the process is finished, closing the air inlet 6 when the process is finished, and exhausting residual air in the cavity through the exhaust port 7.
The practical application of the pre-cleaning process by adopting the ICP device inevitably has the following problems:
first, since the pressure in the chamber needs to be maintained at 10mT or more in the glow starting step to introduce seed electrons required for discharging the process gas, normal glow starting is ensured, which results in a short free path of various particles and poor ion directionality, thereby causing a reduction in process uniformity.
Secondly, the substrate is damaged by a higher starting voltage because the starting region under the high-pressure condition is closer to the substrate to be processed.
Thirdly, when the process is carried out, the air pressure in the cavity is a gradually reduced change process so as to ensure the uniformity of the process, but the change of the air pressure is not beneficial to the stability of the whole process, and even the phenomenon of glow breaking can occur.
Fourthly, as a high-voltage glow starting step is required to be carried out independently, the consumed process time is long, and the production efficiency is reduced.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides plasma processing equipment and a pre-cleaning process, which can improve the process uniformity and the process stability, reduce the substrate damage and improve the process efficiency.
To achieve the object of the present invention, a plasma processing apparatus is provided
(filling after claims have been finalized)
The invention has the following beneficial effects:
according to the plasma processing equipment provided by the invention, the seed electrons required by the discharge of the process gas are introduced into the reaction chamber by using the ignition device, so that the normal starting can be realized without using higher chamber pressure, and therefore, the short free path of various particles and the poor ion directionality caused by higher chamber pressure can be avoided, and the process uniformity can be further improved. Meanwhile, high-pressure starting is not needed, so that the process time can be shortened, the process efficiency is improved, and the pressure of the cavity can be more stable in the process of the process, so that the process stability can be improved. In addition, the area of the ignition device for generating the plasma in the reaction chamber is far away from the base, so that the damage to the substrate can be reduced, and the product yield can be improved.
According to the pre-cleaning process provided by the invention, the surface of the substrate is cleaned by adopting the plasma processing equipment provided by the invention, so that the problems of short free path of various particles and poor ion directionality caused by high chamber pressure can be avoided, the process uniformity can be improved, the process time can be shortened, the process efficiency can be improved, and in addition, the chamber pressure can be more stable in the process of carrying out the process, and the process stability can be improved.
Drawings
Fig. 1 is a structural view of a conventional ICP apparatus;
FIG. 2 is a block diagram of a process for performing a precleaning process using a conventional ICP apparatus;
fig. 3 is a block diagram of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 4A is an enlarged view of area I of FIG. 3;
FIG. 4B is a circuit diagram of an ignition device employed in an embodiment of the present invention;
fig. 5 is a block flow diagram of a preclean process according to an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the plasma processing apparatus and the precleaning process provided by the present invention will be described in detail below with reference to the accompanying drawings.
Referring to fig. 3 to 4B, the plasma processing apparatus includes a reaction chamber, a rf coil 23, an upper rf source, a lower rf source, an air inlet device, and an ignition device 33, wherein the reaction chamber is defined by a cavity 21, an insulating cylinder 24 disposed at the top of the cavity 21, and an air inlet cover 25 disposed at the top of the insulating cylinder 24. The gas inlet means comprises a gas inlet 26 provided in the gas inlet cover 25 for feeding process gases into the reaction chamber. An exhaust port 27 is provided at the bottom of the chamber 21 for exhausting the exhaust gas. The radio frequency coil 23 is disposed around the outside of the insulating cylinder 26, which is electrically connected to the upper radio frequency source. The upper rf source includes an upper matching unit 28 and an upper rf source 29 for applying rf energy to the rf coil 23, and the rf energy is fed into the reaction chamber through the insulating cylinder 24 to excite the process gas in the reaction chamber to form plasma. In addition, a susceptor 30 for supporting a substrate is provided in the reaction chamber, and the susceptor 30 is electrically connected to the lower rf source. The lower rf source includes a lower matching unit 31 and a lower rf source 32 for applying a negative bias to the susceptor 30, which forms an electric field capable of controlling the movement of the plasma toward the substrate. In addition, a shielding case 22 is covered around the radio frequency coil 23 and the air intake cover 25, and the shielding case 22 is grounded to shield radio frequency.
The ignition device 33 is fixed to the chamber lid 25 by a flange 252 for introducing seed electrons required for discharging the process gas into the interior of the reaction chamber. The seed electrons are first electrons that can excite the process gas to form a plasma in the glow starting stage in order to maintain a normal discharge of the plasma in the process stage. The initial electrons are ionized under the excitation of an external radio frequency electric field to generate self-sustaining discharge plasma, namely, normal starting is realized, the starting process is very short, and the plasma capable of stably discharging is quickly obtained.
As can be seen from the above, the ignition device 33 is used for starting without using a high chamber pressure, so that it is possible to avoid that the free path of various particles is short and the directionality of ions is poor due to the high chamber pressure, and further, the process uniformity can be improved. Meanwhile, high-pressure starting is not needed, so that the process time can be shortened, the process efficiency is improved, and the pressure of the cavity can be more stable in the process of the process, so that the process stability can be improved.
In addition, the area where the ignition device 33 generates plasma in the reaction chamber is located near the gas inlet cover plate 25 and is far away from the base 30, so that the damage to the substrate can be reduced, and the product yield can be improved.
The structure of the ignition device 33 provided in the embodiment of the present invention will be described in detail below. Specifically, as shown in fig. 4A and 4B, the ignition device 33 includes a pair of ignition electrodes 331 and an ignition controller 332, wherein the ignition controller 332 is disposed above the intake cover 25 to control the ignition electrodes 331 to perform pulse discharge. A flange opening 251 is provided in the intake cover plate 25, and the input end (upper end) of the ignition electrode 331 is electrically connected to the ignition controller 332; the output end (lower end) of the ignition electrode passes vertically downward through the flange opening 251 and extends to the interior of the reaction chamber. During the ignition process, the ignition controller 332 applies a pulse voltage to the output terminals of the two ignition electrodes 331, and since the output terminals of the two ignition electrodes 331 are located inside the reaction chamber, a current flows through the process gas inside the reaction chamber, so as to excite the process gas to form a plasma. Ignition controller 332 may be a conventional starter, which is generally composed of a pulse discharge control circuit, such as the circuit shown in fig. 4B.
Preferably, the ignition device 33 further comprises an electrode driving mechanism (not shown) for driving the ignition electrode 331 to move, so that the output end of the ignition electrode 331 moves into or out of the reaction chamber. In the ignition stage, the output end of the ignition electrode 331 can be driven by the electrode driving mechanism to move into the reaction chamber, so as to ignite the plasma. After the ignition is completed, the output end of ignition electrode 331 is driven out of the interior of the reaction chamber by using an electrode driving mechanism to avoid disturbance of the plasma by the portion of ignition electrode 331 located inside the reaction chamber. Of course, in practical applications, even if the ignition electrode 331 disturbs the plasma, it will not affect the normal operation of the process. The electrode driving mechanism can adopt a motor and a corresponding transmission mechanism to drive the ignition electrode 331.
It should be noted that the reaction chamber is not limited to the above structure adopted in this embodiment, and in practical applications, the reaction chamber may also adopt any other structure, and the above ignition device may be fixed on the top chamber wall of the reaction chamber of any structure in a similar or other manner as this embodiment.
It is further noted that the plasma processing apparatus provided by the embodiment of the present invention can be used for performing a precleaning process on the substrate to remove impurities on the surface of the substrate. Alternatively, it can be used for other processes.
It should be noted that, in the present embodiment, the gas inlet device includes the gas inlet 26 disposed on the top of the gas inlet cover plate 25, but the present invention is not limited thereto, and in practical application, the gas inlet device may also adopt any other structure and be disposed at any position of the reaction chamber, as long as the process gas can be delivered into the reaction chamber.
As another technical solution, fig. 5 is a block flow diagram of a precleaning process according to an embodiment of the invention. Referring to fig. 5, a precleaning process is further provided according to an embodiment of the present invention, in which the plasma processing apparatus provided by the embodiment of the present invention is used to clean the surface of the substrate to remove impurities on the surface of the substrate. The pre-cleaning process comprises the following steps:
s1, the gas inlet device (i.e., the gas inlet 26) is opened to supply the process gas into the reaction chamber, and the pressure of the reaction chamber is maintained at a predetermined pressure.
S2, starting the ignition device 33, the upper radio frequency source and the lower radio frequency source according to a preset sequence;
s3, turning off the ignition device 33;
s4, cleaning the surface of the substrate;
s5, closing the upper radio frequency source and the lower radio frequency source;
and S6, closing the air inlet device.
Preferably, the predetermined pressure is less than 10mT in order to avoid affecting process uniformity. Further preferably, the preset pressure is 1 mT.
In the above step S2, the preset sequence may be:
simultaneously turning on the ignition device 33, the upper radio frequency source and the lower radio frequency source; or, the ignition device is started first, and then the upper radio frequency source and the lower radio frequency source are started simultaneously; or the ignition device, the upper radio frequency source and the lower radio frequency source are sequentially started. The ignition device 33 can be used to generate plasma in the reaction chamber in a region far away from the base by sequentially starting the ignition device, the upper radio frequency source and the lower radio frequency source, so that substrate damage can be reduced, and the product yield can be improved.
According to the pre-cleaning process provided by the embodiment of the invention, the surface of the substrate is cleaned by adopting the plasma processing equipment provided by the embodiment of the invention, so that the problems that the free path of various particles is short and the directionality of ions is poor due to high chamber pressure can be avoided, the process uniformity can be improved, the process time can be shortened, the process efficiency can be improved, and in addition, the chamber pressure can be more stable in the process of carrying out the process, so that the process stability can be improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A plasma processing device comprises a reaction chamber, an upper radio frequency source, a lower radio frequency source and a gas inlet device, wherein a base used for bearing a substrate is arranged in the reaction chamber; the gas inlet device is used for conveying process gas into the reaction chamber, and is characterized by further comprising an ignition device which is used for introducing seed electrons required for discharging the process gas into the reaction chamber.
2. The plasma processing apparatus of claim 1, wherein the ignition device comprises a pair of ignition electrodes and an ignition controller, wherein,
the ignition controller is arranged above the top chamber wall of the reaction chamber and used for controlling the ignition electrode to perform pulse discharge;
the top of the reaction chamber is provided with a flange port, the input end of the ignition electrode is electrically connected with the ignition controller, and the output end of the ignition electrode vertically penetrates through the flange port downwards and extends to the inside of the reaction chamber.
3. The plasma processing apparatus of claim 2 wherein the ignition device further comprises an electrode drive mechanism for driving movement of the ignition electrode to move the output end of the ignition electrode into or out of the interior of the reaction chamber.
4. The plasma processing apparatus according to any one of claims 1 to 3, wherein the reaction chamber comprises a chamber body, an insulating cylinder disposed on top of the chamber body, and a chamber lid plate disposed on top of the insulating cylinder;
the ignition device is fixed on the cavity chamber cover plate;
the upper radio frequency source comprises a radio frequency coil, an upper matcher and an upper radio frequency power supply, wherein the radio frequency coil surrounds the insulating cylinder and is electrically connected with the upper radio frequency power supply through the upper matcher; the upper radio frequency power supply is used for loading radio frequency power to the radio frequency coil.
5. The plasma processing apparatus as claimed in any of claims 1 to 3, wherein the lower RF source comprises a lower adapter and a lower RF power source electrically connected to the susceptor through the lower adapter for applying RF power to the susceptor.
6. The plasma processing apparatus as recited in claim 1 wherein said plasma processing apparatus is configured to perform a preclean process on said substrate.
7. A precleaning process wherein the substrate surface is cleaned using the plasma processing apparatus of any of claims 1-6; the pre-cleaning process comprises the following steps:
s1, starting the gas inlet device, conveying process gas into the reaction chamber, and keeping the pressure of the reaction chamber at a preset pressure;
s2, starting the ignition device, the upper radio frequency source and the lower radio frequency source according to a preset sequence;
s3, turning off the ignition device;
s4, cleaning the surface of the substrate;
s5, turning off the upper radio frequency source and the lower radio frequency source;
s6, closing the air intake device.
8. The precleaning process according to claim 7, wherein in the step S2, the preset sequence is:
simultaneously turning on the ignition device, the upper radio frequency source and the lower radio frequency source; or,
starting the ignition device firstly, and then simultaneously starting the upper radio frequency source and the lower radio frequency source; or,
and sequentially starting the ignition device, the upper radio frequency source and the lower radio frequency source.
9. The preclean process of claim 7, wherein the preset pressure is less than 10 mT.
10. The preclean process of claim 9, wherein the predetermined pressure is 1 mT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710207264.8A CN108668423A (en) | 2017-03-31 | 2017-03-31 | Plasma processing device and pre-cleaning processes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710207264.8A CN108668423A (en) | 2017-03-31 | 2017-03-31 | Plasma processing device and pre-cleaning processes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108668423A true CN108668423A (en) | 2018-10-16 |
Family
ID=63786998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710207264.8A Pending CN108668423A (en) | 2017-03-31 | 2017-03-31 | Plasma processing device and pre-cleaning processes |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108668423A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110049614A (en) * | 2019-04-28 | 2019-07-23 | 中国科学院微电子研究所 | Microwave plasma device and plasma excitation method |
| CN110718440A (en) * | 2019-10-16 | 2020-01-21 | 北京北方华创微电子装备有限公司 | Atomic layer etching equipment and etching method |
| CN111312574A (en) * | 2018-12-11 | 2020-06-19 | 江苏鲁汶仪器有限公司 | Plasma glow starting auxiliary device and method |
| CN111328174A (en) * | 2018-12-17 | 2020-06-23 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma generating method |
| CN111755353A (en) * | 2019-03-26 | 2020-10-09 | 北京北方华创微电子装备有限公司 | Warming-up method and etching method |
| CN111968912A (en) * | 2020-08-24 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Polyimide etching method |
| CN111968905A (en) * | 2020-08-03 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Radio frequency glow starting control method and device for semiconductor equipment |
| CN112074069A (en) * | 2020-09-07 | 2020-12-11 | 深圳先进技术研究院 | Normal-pressure radio-frequency low-temperature plasma device |
| CN113394091A (en) * | 2021-05-10 | 2021-09-14 | 上海华力集成电路制造有限公司 | Dry etching radio frequency discharge enhancement method and dry etching equipment |
| CN113458086A (en) * | 2021-06-03 | 2021-10-01 | 广东工业大学 | Cleaning device and cleaning method for rocket engine parts |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5639519A (en) * | 1993-12-17 | 1997-06-17 | Lsi Logic Corporation | Method for igniting low pressure inductively coupled plasma |
| CN101083868A (en) * | 2007-07-06 | 2007-12-05 | 清华大学 | Preionization igniting device based atmosphere pressure discharging cold plasma generators |
| US20090095714A1 (en) * | 2007-10-12 | 2009-04-16 | Tokyo Electron Limited | Method and system for low pressure plasma processing |
| CN101582322A (en) * | 2008-05-12 | 2009-11-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| TW201129259A (en) * | 2010-02-12 | 2011-08-16 | Advanced Micro Fab Equip Inc | Plasma processing apparatus with diffusion dissociation regions |
| CN102282917A (en) * | 2009-01-15 | 2011-12-14 | 株式会社日立高新技术 | Plasma processing equipment and plasma generation equipment |
| CN202524634U (en) * | 2012-01-10 | 2012-11-07 | 中国科学院西安光学精密机械研究所 | Dielectric barrier discharge enhanced low-temperature plasma electric brush generating device |
| CN103055671A (en) * | 2011-10-21 | 2013-04-24 | 严桓燮 | Silicane degassing device utilizing plasma |
| CN103415135A (en) * | 2013-09-02 | 2013-11-27 | 哈尔滨工业大学 | Device and method for discharging plasma in enhanced way under high speed flow environment |
| CN103533733A (en) * | 2013-10-17 | 2014-01-22 | 中国科学院西安光学精密机械研究所 | Atmospheric pressure magnetic field enhanced low-temperature plasma electric brush generating device |
| CN204231739U (en) * | 2014-11-20 | 2015-03-25 | 大连理工大学 | A kind of plasma chamber producing negative hydrogen ion mechanism |
| CN105555001A (en) * | 2015-12-08 | 2016-05-04 | 上海至纯洁净系统科技股份有限公司 | Normal-voltage glow plasma device |
| CN106298422A (en) * | 2015-06-29 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| US20170076921A1 (en) * | 2015-09-15 | 2017-03-16 | Lam Research Corporation | Metrology Methods to Detect Plasma in Wafer Cavity and Use of the Metrology for Station-to-Station and Tool-to-Tool Matching |
-
2017
- 2017-03-31 CN CN201710207264.8A patent/CN108668423A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5639519A (en) * | 1993-12-17 | 1997-06-17 | Lsi Logic Corporation | Method for igniting low pressure inductively coupled plasma |
| CN101083868A (en) * | 2007-07-06 | 2007-12-05 | 清华大学 | Preionization igniting device based atmosphere pressure discharging cold plasma generators |
| US20090095714A1 (en) * | 2007-10-12 | 2009-04-16 | Tokyo Electron Limited | Method and system for low pressure plasma processing |
| CN101582322A (en) * | 2008-05-12 | 2009-11-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN102282917A (en) * | 2009-01-15 | 2011-12-14 | 株式会社日立高新技术 | Plasma processing equipment and plasma generation equipment |
| TW201129259A (en) * | 2010-02-12 | 2011-08-16 | Advanced Micro Fab Equip Inc | Plasma processing apparatus with diffusion dissociation regions |
| CN103055671A (en) * | 2011-10-21 | 2013-04-24 | 严桓燮 | Silicane degassing device utilizing plasma |
| CN202524634U (en) * | 2012-01-10 | 2012-11-07 | 中国科学院西安光学精密机械研究所 | Dielectric barrier discharge enhanced low-temperature plasma electric brush generating device |
| CN103415135A (en) * | 2013-09-02 | 2013-11-27 | 哈尔滨工业大学 | Device and method for discharging plasma in enhanced way under high speed flow environment |
| CN103533733A (en) * | 2013-10-17 | 2014-01-22 | 中国科学院西安光学精密机械研究所 | Atmospheric pressure magnetic field enhanced low-temperature plasma electric brush generating device |
| CN204231739U (en) * | 2014-11-20 | 2015-03-25 | 大连理工大学 | A kind of plasma chamber producing negative hydrogen ion mechanism |
| CN106298422A (en) * | 2015-06-29 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| US20170076921A1 (en) * | 2015-09-15 | 2017-03-16 | Lam Research Corporation | Metrology Methods to Detect Plasma in Wafer Cavity and Use of the Metrology for Station-to-Station and Tool-to-Tool Matching |
| CN105555001A (en) * | 2015-12-08 | 2016-05-04 | 上海至纯洁净系统科技股份有限公司 | Normal-voltage glow plasma device |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312574A (en) * | 2018-12-11 | 2020-06-19 | 江苏鲁汶仪器有限公司 | Plasma glow starting auxiliary device and method |
| CN111328174A (en) * | 2018-12-17 | 2020-06-23 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma generating method |
| CN111755353A (en) * | 2019-03-26 | 2020-10-09 | 北京北方华创微电子装备有限公司 | Warming-up method and etching method |
| CN110049614B (en) * | 2019-04-28 | 2021-12-03 | 中国科学院微电子研究所 | Microwave plasma device and plasma excitation method |
| CN110049614A (en) * | 2019-04-28 | 2019-07-23 | 中国科学院微电子研究所 | Microwave plasma device and plasma excitation method |
| CN110718440A (en) * | 2019-10-16 | 2020-01-21 | 北京北方华创微电子装备有限公司 | Atomic layer etching equipment and etching method |
| CN110718440B (en) * | 2019-10-16 | 2022-06-14 | 北京北方华创微电子装备有限公司 | Atomic layer etching equipment and etching method |
| CN111968905A (en) * | 2020-08-03 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Radio frequency glow starting control method and device for semiconductor equipment |
| CN111968905B (en) * | 2020-08-03 | 2023-11-14 | 北京北方华创微电子装备有限公司 | Radio frequency starting control method and device for semiconductor equipment |
| CN111968912A (en) * | 2020-08-24 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Polyimide etching method |
| CN112074069A (en) * | 2020-09-07 | 2020-12-11 | 深圳先进技术研究院 | Normal-pressure radio-frequency low-temperature plasma device |
| WO2022048024A1 (en) * | 2020-09-07 | 2022-03-10 | 深圳先进技术研究院 | Automatic ignition type low-temperature atmospheric-pressure radio-frequency plasma apparatus |
| CN113394091A (en) * | 2021-05-10 | 2021-09-14 | 上海华力集成电路制造有限公司 | Dry etching radio frequency discharge enhancement method and dry etching equipment |
| CN113458086A (en) * | 2021-06-03 | 2021-10-01 | 广东工业大学 | Cleaning device and cleaning method for rocket engine parts |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108668423A (en) | Plasma processing device and pre-cleaning processes | |
| US8641916B2 (en) | Plasma etching apparatus, plasma etching method and storage medium | |
| CN113451101B (en) | Plasma processing method and plasma processing apparatus | |
| JPH07183097A (en) | Processing method for workpiece using plasma, and process reaction equipment including plasma ignition device and inductive coupling device, for semiconductor processing | |
| US11315793B2 (en) | Etching method and plasma processing apparatus | |
| KR20140105455A (en) | Plasma treatment method and plasma treatment device | |
| KR20150087702A (en) | Plasma generating apparatus | |
| KR20140022738A (en) | Defect reduction in plasma processing | |
| CN112951698A (en) | Plasma processing method and plasma processing apparatus | |
| JP2022103235A (en) | Plasma processing apparatus and plasma processing method | |
| CN112103165B (en) | Plasma processing method and plasma processing apparatus | |
| US12020899B2 (en) | Plasma processing apparatus and plasma processing method | |
| CN111048389A (en) | Plasma processing method and plasma processing apparatus | |
| KR20210097027A (en) | Plasma processing apparatus and plasma processing method | |
| KR101568722B1 (en) | Plasma reactor and control method thereof | |
| JPH1154484A (en) | Plasma treatment device and plasma treatment method of electronic component | |
| TWI775166B (en) | Plasma processing apparatus and method for processing substrates | |
| JP2000328269A (en) | Dry etching device | |
| JP6960421B2 (en) | Plasma processing equipment and plasma processing method | |
| CN110718440B (en) | Atomic layer etching equipment and etching method | |
| JP4373685B2 (en) | Plasma processing method | |
| KR20230029066A (en) | Apparatus for plasma coating and cleaning and method thereof | |
| CN115732306A (en) | Plasma processing apparatus and abnormal discharge suppression method | |
| JP2002141324A (en) | Plasma washing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181016 |