KR102249401B1 - Socket module associated with semiconductor test - Google Patents

Abstract

The present invention provides a socket module related to semiconductor testing, which includes: a base having an open chamber; a housing located in the chamber, accommodating a semiconductor package and aligning the semiconductor package with respect to a socket to be electrically connected; and a discharge unit which communicates with a fluid providing module for providing a fluid within a set temperature range, includes a hollow channel extending inside the base, and discharges the fluid to the chamber to flow toward the socket through an outlet of the hollow channel formed on a wall surface defining the chamber of the base. The present invention provides the socket module related to semiconductor testing, which can be used to directly and three-dimensionally apply temperature stress to the semiconductor package.

Description

Socket module related to semiconductor test {SOCKET MODULE ASSOCIATED WITH SEMICONDUCTOR TEST}

The present invention relates to a socket module related to semiconductor testing.

In general, a semiconductor package completed by a semiconductor manufacturing process is checked for proper implementation of operating characteristics through a test (inspection) process and then shipped when classified as a good product.

In this inspection process, the test is also performed by connecting the semiconductor package to the socket to check whether there is a problem in the electrical operation. Such inspections are sometimes performed in an environment that heats or cools the semiconductor package and places temperature stress thereon.

In that case, a method of applying temperature stress to a semiconductor package by heating or cooling air in a space (room) for such inspection is used. However, since the temperature stress does not directly act on the semiconductor package, the effect of applying the temperature stress may be halved.

Furthermore, in the above case, the socket together with the semiconductor package is placed in an environment subject to temperature stress. Therefore, in the case of producing a socket, it is necessary to check whether the socket itself works properly under the above temperature stress.

An object of the present invention is to provide a socket module related to a semiconductor test, which can be used to directly and three-dimensionally apply temperature stress to a semiconductor package.

Another object of the present invention is to provide a socket module related to a semiconductor test, which can also be used to directly apply temperature stress to a socket.

A socket module related to a semiconductor test according to an aspect of the present invention for realizing the above object includes: a base having an opened chamber; A housing located in the chamber, accommodating a semiconductor package, and aligning the semiconductor package with a socket to be electrically connected; And a hollow channel communicating with a fluid providing module that provides a fluid in a set temperature range and extending inside the base, the socket through an outlet of the hollow channel formed on a wall surface defining the chamber among the bases. It may include a discharge unit that discharges the fluid to the chamber so as to flow toward it.

Here, the chamber may include: a first space through which a pusher module enters to press the semiconductor package against the socket; And a second space having a larger cross-sectional area than the first space and accommodating the housing, wherein the second space includes the pusher based on the first space while the pusher module is spaced apart from the base. It can be located on the opposite side of the module.

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Here, the discharge unit may further include a distribution channel that is concave on a surface of the base defining the chamber to allow the fluid discharged from the hollow channel to flow through the housing to the socket.

Here, the distribution channel may include a first accumulating portion formed concave in a portion of the base corresponding to an outlet of the hollow channel in an inner wall facing the housing.

Here, the distribution channel may further include a second accumulating part that is concavely formed in a portion of the base of the inner wall facing the housing opposite to the outlet of the hollow channel to accumulate the fluid.

Here, the distribution channel may further include a connection part connecting the fluid accumulated in the first accumulating part to flow to the second accumulating part.

Here, the connection part may be concave in the ceiling surface defining the second space of the base.

Here, the connection part may be formed to extend along the circumferential direction of the first space from the ceiling surface.

Here, the socket may further include the socket positioned under the housing and supporting the semiconductor package.

The socket module related to the semiconductor test according to the present invention configured as described above can be used to test a semiconductor package or socket in a temperature stress environment, and in that case, a fluid having a set temperature range is contained in the semiconductor package or socket accommodated in the chamber. When ejected, he can be exposed to the set temperature stress.

Thereby, for the semiconductor package, the temperature stress can be applied not only to its upper surface through the blade of the pusher module, but also to its lower surface by the fluid, so that the semiconductor package can be tested in a more direct and three-dimensional temperature stress environment. There will be.

In addition, the socket can be tested while being directly subjected to temperature stress by the fluid.

According to the above, since the temperature stress set for the test object can be accurately applied as set, the reliability of the test can be ensured.

1 is an exploded perspective view of a test apparatus 100 related to an embodiment of the present invention.
2 is a block diagram illustrating a control operation of the test apparatus 100 of FIG. 1.
3 is a cut perspective view of the socket module 130 of FIG. 1 in an assembled state.
FIG. 4 is a partial perspective view of the base 135 viewed from the bottom side of the base 135 of FIG. 3 as viewed from the chamber 137.
5 is a cut-away perspective view of a main portion showing a state in which the pusher module 110 of FIG. 1 is in contact with the socket module 130.

Hereinafter, a socket module related to a semiconductor test according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In this specification, the same/similar reference numerals are assigned to the same/similar configurations even in different embodiments, and the description will be replaced with the first description.

1 is an exploded perspective view of a test apparatus 100 related to an embodiment of the present invention, and FIG. 2 is a block diagram for explaining a control operation of the test apparatus 100 of FIG. 1.

Referring to the drawings, the test apparatus 100 is for testing the electrical characteristics of the object while directly applying temperature stress to the object. When the object is the socket 131, the test device 100 may be referred to as a socket test device. Alternatively, when the object is a semiconductor package P, the test device 100 may be referred to as a semiconductor package test device. In this way, the test device 100 may be used as a socket test device or a semiconductor package test device by partial adjustment of the configuration. Hereinafter, the two types of use will be comprehensively considered and described.

The test apparatus 100 may have a pusher module 110, a socket module 130, a substrate module 150, a control module 170, and a fluid providing module 190 as a whole.

The pusher module 110 is a component for pressing the semiconductor package P against the socket module 130, specifically, the socket 131. This allows the semiconductor package P to be electrically connected to the socket 131. Specifically, the pusher module 110 may include a body 111, a blade 113, a blocking member 115, a heating unit 117, a cooling unit 119, and a first temperature sensor 120. .

The body 111 accommodates the heating unit 117 and the cooling unit 119 therein, and may generally have a box shape. Further, the body 111 is formed of an insulating material, so that heat generated from the heating unit 117 or cold air generated from the cooling unit 119 is minimized to be radiated to the outside. Alignment pins 112 for aligning the body 111 with the socket module 130 may protrude on the bottom surface of the body 111.

The blade 113 is formed protruding from the bottom of the body 111. The blade 113 may have a shape such as a block having a generally rectangular cross section. The bottom surface of the blade 113 becomes a contact surface in contact with the semiconductor package P. Further, since the suction pad 114 is installed on the contact surface, the semiconductor package P may be vacuum-adsorbed on the contact surface. The blade 113 presses the semiconductor package P against the socket 131 through the contact surface.

The blocking member 115 is formed to protrude from the body 111 in a form surrounding the blade 113. The blocking member 115 may be attached to the bottom or side surfaces of the body 111. The blocking member 115 forms a closed loop, for example, a square loop to block a gap between the pusher module 110 and the socket module 130. The blocking member 115 may be formed of, for example, a silicon material.

The heating unit 117 is a component that generates heat to apply temperature stress to the semiconductor package P. The heating unit 117 may specifically include a ceramic heater. The ceramic heater is disposed inside the body 111, and heat generated therefrom is transferred to the semiconductor package P through the blade 113.

The cooling unit 119 is also configured to take away heat in order to apply temperature stress to the semiconductor package P. The cooling unit 119 takes heat from the semiconductor package P through the blade 113 and discharges it to the outside. The cooling unit 119 may specifically include a thermoelectric element (not shown) and a heat dissipating element 119'. The thermoelectric element is operated by the Peltier effect. The heat dissipation element 119 ′ is configured to discharge heat of the semiconductor package P absorbed by the thermoelectric element through the blade 113 to the outside. The heat discharging element 119 ′ may have a cooling water passage through which cooling water flows.

The first temperature sensor 120 is a component for measuring the temperature of the semiconductor package P. The first temperature sensor 120 may be installed such that an end portion thereof is exposed on a surface of the blade 113 in contact with the semiconductor package P.

The socket module 130 may include a socket 131, a housing 133, a base 135, a discharge unit 141, and a second temperature sensor 149.

The socket 131 supports the semiconductor package P and is configured to be electrically connected to the semiconductor package P in correspondence with the electrode thereof. The socket 131 is mounted on the substrate module 150. The socket 131 is a component in a socket module used in a semiconductor package test apparatus, but is not a component of the socket module used in a socket test apparatus, but is a test object.

The housing 133 is mounted on the substrate module 150 while covering the edge region of the socket 131. The housing 133 has the shape of a bowl opened to expose the main portion of the socket 131, and the semiconductor package P is accommodated therein. The housing 133 is aligned with the socket 131 by the shape of the semiconductor package P.

The base 135 is disposed to face the pusher module 110 and may have a generally plate shape. Accordingly, the pusher module 110 is disposed on the upper side of the base 135, and the substrate module 150 on which the socket 131 and the housing 133 are mounted is disposed on the lower side thereof. An alignment hole 136 may be formed in the base 135 to accommodate the alignment pin 112.

In addition, a chamber 137 opened toward the pusher module 110 and the socket 131 may be formed in the center of the base 135. The chamber 137 is a space accommodating the blade 113 of the pusher module 110 and a space accommodating the housing 133 (and the socket 131).

The discharge unit 141 is configured to discharge a fluid within a set temperature range to the chamber 137 so that the fluid applies temperature stress to the socket 131. The fluid is provided from the fluid providing module 190. To this end, the discharge unit 141 may have a connection port 143 connected to the fluid providing module 190. The connector 143 has a shape like a fitting and may be mounted on the edge region of the base 135. The discharge unit 141 may also have a hollow channel 145 connecting the connection port 143 and the chamber 137. The hollow channel 145 may extend inside the base 135. The hollow channel 145 may be connected to only one side of the chamber 137.

The second temperature sensor 149 is a component for measuring the temperature of the socket 131 subjected to temperature stress by the fluid. The second temperature sensor 149 may be mounted in a groove formed in the base 135. Even if the second temperature sensor 149 does not come into contact with the socket 131, it may indirectly measure its temperature through the base 135.

The substrate module 150 is a target to which the socket 131 and the housing 133 are installed, and is configured to input electricity to the socket 131.

The control module 170 is a processor for controlling the heating unit 117, the cooling unit 119, the substrate module 150, the fluid providing module 190, and the like. The control module 170 controls the substrate module 150 to adjust an electrical input to the socket 131. In addition, based on the detection result of the first temperature sensor 120, the operation of the heating unit 117 and the cooling unit 119 is controlled. Further, based on the second temperature sensor 149, the operation of the fluid providing module 190 is controlled.

The fluid providing module 190 is a component for providing the fluid to the discharge unit 141. Here, the temperature range at which the fluid acts may be -60 to 150°C. In order to provide a low-temperature fluid among these fluids, the fluid providing module 190 may have a liquid nitrogen tank. Further, the fluid providing module 190 may have a dry air tank and a heater for heating the dry air in order to provide a high temperature fluid.

According to this configuration, the socket test apparatus includes the socket 131 and the housing 133 in a state in which the socket 131 to be tested is mounted on the substrate module 150 using the housing 133. ). In that state, the pusher module 110 descends so that the blade 113 electrically connects the semiconductor package P to the socket 131. In this state, the control module 170 controls the fluid providing module 190 to discharge the fluid in the set temperature range to the chamber 137 through the discharge unit 141 in order to apply temperature stress to the socket 131. Let it be. The socket 131 serves to electrically connect the semiconductor package P and the substrate module 150 in an environment subjected to such temperature stress. The control module 170 determines whether the socket 131 is of good quality by measuring whether the electrical characteristics of the socket 131, for example, its resistance change.

In this process, the semiconductor packages P may be repeatedly used to test several sockets 131, but several may be alternately used to prevent damage to their electrodes due to repeated use. In addition, the semiconductor package P for this is limited to those determined as good products through a preliminary test. In addition, the heating unit 117 and the cooling unit 119 of the pusher module 110 are difficult to apply temperature stress to the socket 131, so they are not operated.

In contrast, in the semiconductor package test apparatus, in a state in which the blade 113 of the pusher module 110 presses the socket 131, the control module 170 is the heating unit 117 and/or the cooling unit 119 By operating, the temperature stress is applied to the semiconductor package P through the blade 113. In this case, the temperature stress caused by the heating unit 117 and the cooling unit 119 is applied only to the upper surface of the semiconductor package P. In order to compensate for this, the control module 170 may cause the discharge unit 141 to discharge the fluid by actuating the fluid providing module 190. In that case, the fluid also affects the bottom side of the semiconductor package P while acting on the socket 131. This makes it possible to apply direct and three-dimensional temperature stress to the semiconductor package P. The control module 170 measures the electrical characteristics of the semiconductor package P at this time to determine whether it is good or not. Here, the socket 131 used is determined to be good through other test devices in advance, and may be repeatedly used several thousand to tens of thousands of times depending on its lifespan.

The main structure of the socket module 130 in the above test apparatus 100 will be described with reference to FIGS. 3 and 4. Here, FIG. 3 is a cut perspective view of the socket module 130 of FIG. 1 in an assembled state, and FIG. 4 is a part of the base 135 viewed from the bottom side of the base 135 of FIG. It is a perspective view.

Referring to FIG. 3, with respect to the chamber 137 of the base 135, the socket 131 and the housing 133 may approach and be inserted from the bottom side of the base 135. In that case, the upper surface of the housing 133 comes into contact with the bottom surface (ceiling surface 139a) of the chamber 137.

The socket 131 located at the lower side of the housing 133 is located at the lowest level of the chamber 137. The semiconductor package P supported by the socket 131 and positioned inside the housing 133 is also positioned at a lower level of the chamber 137.

For these sockets 131 and housing 133, the hollow channel 145 may be located at a level corresponding to a generally intermediate portion of the housing 133.

Referring to FIG. 4, the chamber 137 may be divided into a first space 138 and a second space 139. Based on the vertical direction of the base 135, the first space 138 is positioned at an upper portion close to the pusher module 110, and the second space 139 is positioned at a lower portion close to the substrate module 150.

In addition, compared to the first space 138, the second space 139 may have a wider cross-sectional area. If the first space 138 is for accommodating or passing the blade 113 of the pusher module 110 and the semiconductor package P, the second space 139 accommodates the socket 131 and the housing 133 For.

The second space 139 may be defined by the ceiling surface 139a and the wall surface 139b. The upper surface of the housing 133 comes into contact with the ceiling surface 139a. Further, the side surface of the housing 133 faces the wall surface 139b. The outlet 145' of the hollow channel 145 is exposed on the wall surface 139b.

In order to allow the fluid discharged to the chamber 137 through the outlet 145 ′ to flow to the socket 131 despite the housing 133, a distribution channel 147 is formed in the base 135. The distribution channel 147 may have a first accumulation portion 147a, a second accumulation portion 147b, and a connection portion 147c.

The first accumulating portion 147a is formed concave to correspond to the outlet 145' of the wall surface 139b. The first accumulating part 147a may be formed to extend from a lower portion to an upper portion of the wall surface 139b, for example. The fluid discharged from the outlet 145 ′ is accumulated in the first accumulating part 147a, and the fluid crosses the upper surface of the housing 133 or flows toward the bottom surface of the housing 133, while flowing into the socket 131. Temperature stress can be imparted.

The second accumulation portion 147b may be formed to be concave on the opposite side of the first accumulation portion 147a of the wall surface 139b. The second accumulation portion 147b may also extend from the lower portion of the wall surface 139b to the upper portion, similar to the first accumulation portion 147a. The second accumulating part 147b is located farthest from the outlet 145 ′, so that insufficient fluid accumulates in the region, thereby affecting the socket 131.

Further, the connecting portion 147c is a configuration connecting them so that the fluid accumulated in the first accumulating portion 147a flows to the second accumulating portion 147b. The connection part 147c may be concavely formed in the ceiling surface 139a. Furthermore, the connection part 147c may be formed to extend in a concave shape along the circumference of the first space 138. Thereby, a flow path is formed between the ceiling surface 139a and the upper surface of the housing 133 by the connection portion 147c.

Finally, a state in which the pusher module 110 is in contact with the socket module 130 will be described with reference to FIG. 5.

FIG. 5 is a cutaway perspective view of a main part showing a state in which the pusher module 110 of FIG. 1 is in contact with the socket module 130.

Referring to this drawing, as the pusher module 110 descends, its blade 113 is inserted into the chamber 137. The semiconductor package P adsorbed on the bottom surface of the blade 113 is connected to the socket 131 while being accommodated in the housing 133.

In this state, the fluid discharged into the chamber 137 by the discharge unit 141 applies temperature stress to the socket 131 through the inner space of the housing 133 through the distribution channel 147.

In this case, air in the chamber 137 may be discharged into a gap between the base 135 and the body 111 through the free space between the chamber 137 and the blade 113. However, this may be blocked by the blocking member 115 disposed to close the gap.

The socket module related to the semiconductor test as described above is not limited to the configuration and operation method of the embodiments described above. The above embodiments may be configured so that all or a part of each of the embodiments may be selectively combined so that various modifications may be made.

100: test device 110: pusher module
111: blade 115: blocking member
130: socket module 131: socket
133: housing 135: base
141: discharge unit 150: substrate module
170: control module 190: fluid supply module

Claims (10)

A base having an opened chamber;
A housing located in the chamber, accommodating a semiconductor package, and aligning the semiconductor package with a socket to be electrically connected; And
It communicates with a fluid providing module that provides a fluid in a set temperature range and has a hollow channel extending in the interior of the base, and toward the socket through an outlet of the hollow channel formed on a wall surface defining the chamber among the bases. A socket module related to a semiconductor test, comprising a discharge unit for discharging the fluid to the chamber to flow.
delete delete The method of claim 1,
The discharge unit,
A socket module related to a semiconductor test, further comprising a distribution channel that is concave on a surface of the base defining the chamber to allow the fluid discharged from the hollow channel to flow through the housing to the socket.
The method of claim 4,
The distribution channel,
A socket module related to a semiconductor test, comprising: a first accumulating portion recessed in a portion of the base corresponding to the outlet in an inner wall facing the housing.
The method of claim 5,
The distribution channel,
A socket module related to a semiconductor test, further comprising a second accumulating portion concavely formed in a portion of the base of the inner wall facing the housing opposite to the outlet to accumulate the fluid.
The method of claim 6,
The distribution channel,
A socket module related to a semiconductor test, further comprising a connection part for connecting the fluid accumulated in the first storage part to flow to the second storage part.
The method of claim 7,
The chamber,
A first space through which a pusher module enters to press the semiconductor package against the socket; And
It has a cross-sectional area larger than the first space, and includes a second space accommodating the housing,
The second space,
In a state where the pusher module is spaced apart from the base, it is located on the opposite side of the pusher module with respect to the first space,
The connection part,
A socket module related to a semiconductor test, which is formed concave in a ceiling surface defining the second space of the base.
The method of claim 8,
The connection part,
A socket module related to a semiconductor test, formed to extend along the circumferential direction of the first space from the ceiling surface.
The method of claim 1,
A socket module related to a semiconductor test, further comprising the socket located under the housing and supporting the semiconductor package.

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